A method and system for temperature-controlled cooling-assisted ultraviolet light curing for fabricating quartz glass devices

Abstract

The application provides a method and system for preparing a quartz glass device by temperature-controlled cooling and ultraviolet light curing. The method comprises slurry injection molding, temperature control, light curing forming, annealing, thermal debinding and sintering. The key feature is that during the ultraviolet light curing stage, the mold into which the slurry is injected is placed in a cooling cavity containing cooling liquid, and the temperature of the cooling liquid is maintained in the range of 0-25 DEG C by a temperature control device to provide a low-temperature environment, thereby reducing the thermal stress and shrinkage stress caused by temperature rise during the curing process and inhibiting the generation of cracks in large-size quartz glass devices during the debinding and sintering process. The system comprises a mold assembly, an ultraviolet light source module, a temperature control and cooling device and a control system, can realize temperature control, and improves the consistency and structural stability of the formed device. The application can be widely applied to the field of rapid manufacturing of optical microstructures, biochips and high-precision quartz devices, and has the advantages of simple process, good stress control effect and strong adaptability.

Description

Technical Field

[0001] This invention relates to the field of inorganic non-metallic material processing, specifically to a method and system for preparing quartz glass devices by temperature-controlled cooling-assisted ultraviolet curing. Background Technology

[0002] Quartz glass, due to its excellent thermal stability, high optical transmittance, high temperature resistance, and chemical inertness, has irreplaceable application value in high-end manufacturing fields such as semiconductors, optical communications, and high-power laser systems. However, its high melting point and brittleness present significant technical challenges in the molding and processing of quartz glass. Currently, 3D printing, femtosecond laser-assisted etching, and molding sintering are commonly used methods to fabricate quartz glass devices. While 3D printing technology can achieve the molding of complex three-dimensional green bodies, it suffers from low efficiency and high surface roughness after sintering, making it difficult to meet the surface quality and shape accuracy requirements of high-end manufacturing applications. Femtosecond laser-assisted etching requires multiple chemical treatments, resulting in a complex process flow. Furthermore, its anisotropic etching characteristics limit its suitability for constructing high-precision, large-size quartz glass devices. Molding sintering technology easily introduces residual stress during high-temperature molding, leading to cracks and structural warping, a problem particularly prominent in the manufacturing of large-size quartz glass devices.

[0003] Given the technical bottlenecks of the aforementioned methods, such as low molding efficiency, complex processes, and severe thermal stress accumulation, photopolymerization rapid prototyping technology has attracted attention in the field of precision molding of quartz glass preforms due to its advantages of low temperature and high efficiency. However, during the photopolymerization process, the monomer polymerization reaction releases a large amount of heat, which can cause the local temperature of the slurry to rise sharply to over 100 °C. High temperatures promote rapid shrinkage of the preform, thereby introducing significant thermal and shrinkage stresses. These stresses are released during the subsequent debinding and sintering stages, easily leading to cracking or warping deformation of the device, which has become a bottleneck restricting the manufacturing of large-size (diameter > 40 mm, thickness ≥ 10 mm) quartz glass devices using photopolymerization molding technology. Existing photopolymerization molding technologies lack effective means to control the temperature rise during the curing process, making it difficult to suppress the heat accumulation and shrinkage caused by polymerization exothermics at the source. Therefore, it is urgent to develop a photopolymerization auxiliary system with temperature control function to control the temperature field during the molding process, reduce the accumulation of thermal and shrinkage stresses at the source, reduce the risk of device cracking and deformation, and improve the molding quality and dimensional accuracy of quartz glass devices to meet their manufacturing requirements in complex structures and large-size applications. Summary of the Invention

[0004] To overcome the above problems, this invention provides a method and system for preparing quartz glass devices using temperature-controlled cooling-assisted ultraviolet curing. During the ultraviolet curing stage, a mold containing the injected slurry is placed in a cooling chamber filled with coolant. The temperature of the coolant is maintained at 0~25 ℃ by a temperature-controlled cooling device to provide a low-temperature environment, thereby reducing the temperature rise during curing and the resulting high-temperature shrinkage, effectively suppressing the risk of cracks in large-size quartz glass devices.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A method for preparing quartz glass devices by temperature-controlled cooling-assisted ultraviolet light curing specifically includes the following steps:

[0007] Step S01: Preparation of glass slurry. The glass slurry is prepared by mixing nano-silica powder, monomers, crosslinking agent, plasticizer, photoinitiator, and polymerization inhibitor according to the specified mass percentages.

[0008] Step S02: Mold preparation and slurry injection. The glass slurry is injected into the forming cavity of the mold;

[0009] Step S03: Cooling system assembly and pre-cooling. The temperature of the coolant is maintained at 0~25 ℃ by a temperature-controlled cooling device, thereby providing a low-temperature environment for the slurry;

[0010] Step S04: Low-temperature light curing. Under a low-temperature environment where the coolant is stable at 0~25 ℃, the slurry is irradiated and cured using a UV light source to form a green body;

[0011] Step S05: Green body heat treatment. The cured green body is taken out and subjected to annealing, hot degreasing and sintering in sequence to obtain a dense quartz glass device.

[0012] Preferably, the monomer in step S01 is hydroxyethyl methacrylate (HEMA), the crosslinking agent is selected from tetra(ethylene glycol) diacrylate (TEGDA) or polyethylene glycol diacrylate (PEGDA), the plasticizer is selected from diethyl phthalate (DEP) or diethylene glycol dibenzoate (DEDB), and the photoinitiator is selected from diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (TPO) or phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide (Irgacure 819).

[0013] Preferably, the glass slurry comprises the following components (by mass percentage): 40-60 wt% silica, 24.8-37.2 wt% monomer, 2.8-4.2 wt% crosslinking agent, 12.4-18.6 wt% plasticizer, and 0.25-1 wt% photoinitiator (based on the total mass of the slurry), and the sum of the mass percentages of each component is 100 wt%. Further, the silica powder has an average particle size of 50 nm and a purity greater than 99.8%.

[0014] Preferably, the slurry is subjected to water bath ultrasonic treatment to promote uniform dispersion of nano-silica powder and inhibit its agglomeration.

[0015] Preferably, the wavelength of the ultraviolet light in step S04 is 405 nm, and the light intensity is 100~500 mW / cm². 2 The curing time is 10~100 s, and the light exposure distance is 10~20 cm.

[0016] Preferably, in step S05, the annealing temperature is increased to 70-90°C at a heating rate of 0.1-10°C / s and held at that temperature for 10-40 h.

[0017] Preferably, the degreasing in step S05 is carried out in an air atmosphere, heated at a heating rate of 0.5~1 °C / min, and held at 190 °C, 253 °C, 338 °C, and 500 °C for 4 h respectively.

[0018] Further, the sintering described in step S05 is at 1×10 -2 The process is carried out in a vacuum of mbar. First, the temperature is increased to 1000 ℃ at 10 ℃ / min, and then increased to 1300 ℃ at 3 ℃ / min for sintering. The holding time is 1 to 30 min. After sintering, the temperature is decreased to 500 ℃ at 5 ℃ / min, and then cooled to room temperature in the furnace to obtain a dense quartz glass device.

[0019] To address the stress defects caused by heat buildup during the photocuring process, this invention also provides a temperature-controlled cooling system for assisting in the photocuring of glass slurry, comprising: a mold, an ultraviolet light source module, and a temperature-controlled cooling device, wherein the temperature-controlled cooling device includes:

[0020] a) A semiconductor cooling chip, the cold end of which is in contact with the bottom surface of the cooling chamber to provide a controllable cold source;

[0021] b) A heat dissipation device, connected to the hot end of the semiconductor cooling chip, for heat dissipation;

[0022] c) Variable voltage power adapter, connected to a thermoelectric cooler to regulate its power;

[0023] d) Cooling chamber, used to contain the mold and coolant and maintain a low-temperature environment;

[0024] e) Temperature monitoring module, used to monitor the temperature of the mold or slurry in real time.

[0025] Preferably, the temperature-controlled cooling device maintains the temperature of the coolant in the cooling cavity within a set range by contacting the cold end of the semiconductor refrigeration chip with the cooling cavity.

[0026] This invention is not only applicable to the preparation of quartz glass devices, but can also be extended to photocurable systems such as resins and ceramics.

[0027] Compared with the prior art, the present invention has the following significant advantages:

[0028] 1. This invention uses a temperature-controlled cooling system to control the curing temperature and the resulting shrinkage, thereby suppressing the generation of thermal stress and shrinkage stress during the curing process.

[0029] 2. The present invention prepares green blanks by photocuring at low temperature, which is beneficial for obtaining high-quality quartz glass devices by subsequent sintering, while reducing the formation of defects such as cracks.

[0030] 3. The temperature control system of the present invention adopts a modular design, with a simple and compact structure and high integration, making it easy to integrate into existing photocuring platforms.

[0031] 4. Compared with 3D printing, etching-assisted femtosecond laser, and molding sintering, this invention does not rely on high-precision laser equipment and complex processes, has a high degree of manufacturing freedom, and has the advantages of low cost, simple process and high processing efficiency.

[0032] 5. This invention utilizes the high surface energy properties of nanopowders to significantly reduce the sintering temperature and time required for densification, thereby achieving an efficient, energy-saving, and environmentally friendly manufacturing process while ensuring device performance. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic diagram of a quartz glass device mold structure.

[0035] Figure 2 This is a schematic diagram of the cooling chamber structure.

[0036] Figure 3This is a schematic diagram of the mold and cooling cavity assembly.

[0037] Figure 4 This is a schematic diagram of a temperature-controlled cooling device.

[0038] Figure 5 This is a schematic diagram of a temperature-controlled cooling system.

[0039] Figure 6 Examples include convex lenses, Fresnel lenses, and their profile curves.

[0040] In the figure, 1 is the mold for the quartz glass device, 2 is the cooling cavity, 3 is the slurry injected into the mold, 4 is the coolant, 5 is the thermal fin, 6 is the semiconductor cooling chip, 7 is the supporting substrate, 8 is the copper pipe, 9 is the heat sink, 10 is the fan, 11 is the adjustable voltage power adapter, and 12 is the ultraviolet light source. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, what is described are only some embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this application.

[0042] The specific embodiments of the present invention will be further described below with reference to the accompanying drawings.

[0043] This invention provides a method and system for preparing quartz glass devices by ultraviolet light curing with temperature-controlled cooling assistance.

[0044] refer to Figure 1 In this embodiment of the invention, the mold 1 for the quartz glass device is made of silicone or polydimethylsiloxane (PDMS), which has excellent thermal stability. The mold 1 has an internal molding cavity for injecting the slurry 3. The size and shape of the molding cavity can be customized according to the quartz glass device to be prepared. The bottom of the mold 1 is in close contact with the internal heat-conducting fins of the cooling cavity 2, ensuring efficient heat conduction during the cooling process.

[0045] refer to Figure 2 The cooling chamber 2 has a partially enclosed structure with an opening at the top and radially distributed aluminum alloy heat-conducting fins 5 at the bottom of the inner cavity. These fins rapidly transfer the cold source at the bottom of the cooling chamber to the coolant inside, achieving rapid cooling. The coolant forms a good heat exchange interface with the mold 1 through thermal convection, thereby achieving rapid and uniform cooling of the slurry inside the mold.

[0046] refer to Figure 3After the mold 1 is assembled with the cooling cavity 2, it is placed in the central area of ​​the cooling cavity 2. The mold is surrounded by coolant 4, which significantly improves the heat exchange efficiency. The slurry 3 is injected into the molding cavity through the mold inlet and is cured and formed in the mold by ultraviolet light irradiation.

[0047] refer to Figure 4 The temperature-controlled cooling device includes a semiconductor cooling chip 6 in contact with the outer bottom surface of the cooling cavity 2, providing a controllable cold source. The hot end of the semiconductor cooling chip is attached to the upper surface of the support substrate 7. The upper end of a copper tube 8 is fixed in the mounting hole of the support substrate by an interference fit, and its lower end is connected to the heat sink 9 substrate, forming a heat conduction path. The heat sink 9 consists of an array of aluminum fins, with a fin thickness and spacing of 2.0 mm, and a substrate thickness of not less than 5 mm. Fans 10 are symmetrically mounted at both ends of the heat sink, with the fan rotation axis parallel to the fin arrangement direction, thereby forming an axial airflow between the fins to achieve forced convection heat dissipation and improve heat dissipation efficiency. This device can control the temperature of the coolant by adjusting the operating current of the cooling chip, thus achieving temperature regulation of the mold.

[0048] refer to Figure 5 The temperature-controlled cooling system further includes: an adjustable power adapter 11, which adjusts the power output of the cooling element 6 based on temperature information monitored by temperature sensors installed on the outer wall of the mold or immersed in the coolant, ensuring stable and uniform temperature changes. An ultraviolet light source 12 is used to irradiate the slurry 3 in the mold, causing it to solidify and form under controlled low-temperature conditions, ultimately obtaining a green blank of the quartz glass device.

[0049] A method for preparing quartz glass devices by temperature-controlled cooling-assisted ultraviolet light curing specifically includes the following steps:

[0050] Step S01: Prepare glass slurry.

[0051] A glass slurry is prepared by mixing nano-silica powder, monomer, crosslinking agent, plasticizer, photoinitiator, and polymerization inhibitor according to a certain mass percentage. The monomer is hydroxyethyl methacrylate (HEMA), the crosslinking agent is selected from tetra(ethylene glycol) diacrylate (TEGDA) or polyethylene glycol diacrylate (PEGDA), the plasticizer is selected from diethyl phthalate (DEP) or diethylene glycol dibenzoate (DEDB), and the photoinitiator is selected from diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (TPO) or phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide (Irgacure 819).

[0052] The quartz glass paste comprises the following components (by mass percentage): 40-60 wt% silica, 24.8-37.2 wt% monomer, 2.8-4.2 wt% crosslinking agent, 12.4-18.6 wt% plasticizer, and 0.25-1 wt% photoinitiator (based on the total mass of the paste), and the sum of the mass percentages of all components is 100 wt%.

[0053] Furthermore, the silica powder has an average particle size of 50 nm and a purity greater than 99.8%.

[0054] The slurry was subjected to water bath ultrasonic treatment for 4 hours at a frequency of 40 kHz, with the water temperature maintained at 25-30 ℃ to enhance the dispersion of the slurry.

[0055] Step S02: Mold preparation and grouting.

[0056] The glass slurry is injected into the molding cavity of the mold. The mold material is silicone or PDMS. The height of the mold should be 10 mm above the slurry surface to prevent slurry overflow.

[0057] Step S03: Cooling system assembly and pre-cooling.

[0058] Place the mold containing the slurry into the cooling chamber. Pour coolant into the cooling chamber until the coolant level is higher than the slurry level in the mold, ensuring that the slurry area is effectively surrounded by coolant.

[0059] A low-volatility aqueous solution of ethylene glycol with a freezing point below 0 °C is preferred as the cooling medium. If anhydrous ethanol is used, the cooling chamber must be equipped with a sealed cover (with a light-transmitting window), and operation must be carried out in a well-ventilated environment with strict fire and explosion prevention measures.

[0060] The bottom surface of the cooling chamber is placed on the cold end surface of the semiconductor refrigeration chip of the temperature-controlled cooling device.

[0061] Start the temperature control cooling device to pre-cool the coolant to the target temperature range (0~25 ℃) and stabilize it for at least 30 minutes.

[0062] Step S04: Low-temperature light curing.

[0063] Under a low-temperature environment where the coolant is stable at 0~25 ℃, the slurry is irradiated and cured using an ultraviolet light source to form a green body. The wavelength of the ultraviolet light is 405 nm, and the light intensity is 100~500 mW / cm². 2 The curing time is 10~100 s, and the light exposure distance is 10~20 cm.

[0064] Step S05: Heat treatment of green billet.

[0065] The cured green body is removed and sequentially subjected to annealing, thermal degreasing, and sintering. Annealing involves heating to 70-90°C at a rate of 0.1-10°C / s and holding at that temperature for 10-40 hours. Degreasing is performed in air at a rate of 0.5-1°C / min and held at 190°C, 253°C, 338°C, and 500°C for 4 hours each.

[0066] Sintering at 1×10 −2 The process is carried out in a vacuum of mbar. First, the temperature is increased to 1000 ℃ at 10 ℃ / min, and then increased to 1300 ℃ at 3 ℃ / min for sintering. The holding time is 1~30 min. After sintering, the temperature is decreased to 500 ℃ at 5 ℃ / min, and then cooled to room temperature in the furnace to obtain a dense quartz glass device.

[0067] This invention also provides a temperature-controlled cooling system for assisting in the photocuring of glass slurry to address stress defects caused by heat buildup during reaction. The system includes a mold 1, an ultraviolet light source module 12, and a temperature-controlled cooling device, wherein the temperature-controlled cooling device includes:

[0068] a) A semiconductor cooling chip 6, the cooling surface of which is in contact with the bottom surface of the cooling cavity 2, is used to provide a controllable cold source;

[0069] b) A heat dissipation device, connected to the hot end of the semiconductor cooling chip 6, for efficient heat dissipation, including: a copper pipe 8, a heat sink 9 (the thickness and spacing of the aluminum fins are both 2.0 mm, and the substrate thickness is greater than 5 mm) and a fan 10.

[0070] c) An adjustable power adapter 11 for connecting to the thermoelectric cooler 6 and adjusting its power to achieve temperature control;

[0071] d) Cooling chamber 2, used to contain the mold and coolant and maintain a low temperature environment. The top opening of this chamber is an open structure, and the bottom is provided with ribs 5 (dimensions: length 10 mm, width 5 mm, thickness 1 mm, distributed in a circle) to support the mold and assist in heat conduction. The whole material is aluminum alloy.

[0072] e) Temperature monitoring module, with temperature sensors immersed in coolant or attached to the outer wall of the mold as needed, for real-time temperature monitoring.

[0073] The temperature-controlled cooling device cools the outer bottom surface of the cooling cavity through the cold end of the semiconductor refrigeration chip. The cold source at the bottom of the cavity is transferred to the coolant through the heat-conducting fins, thereby maintaining its temperature within the set range.

[0074] The semiconductor cooling chip uses a thermoelectric cooling component, with a cooling temperature range of -20 ℃ to 30 ℃ and a temperature control accuracy better than ±2 ℃.

[0075] The ultraviolet light source module 12 is an LED array lamp with adjustable irradiation intensity and angle. It is positioned above the cooling cavity 2 and can directly irradiate the mold 1 located inside the cooling cavity.

[0076] Preferably, when using volatile coolants such as ethanol, the cooling chamber should be equipped with a sealed cover (with a light-transmitting window) to prevent evaporation and ensure safe operation.

[0077] The core of this invention lies in the active and precise low-temperature control of the slurry during the ultraviolet curing process through the aforementioned temperature-controlled cooling system. This system can effectively dissipate the heat of reaction and suppress the temperature gradient, thereby significantly reducing the thermal stress generated during curing and subsequent processes, ultimately enabling the fabrication of quartz glass devices (particularly suitable for large sizes).

[0078] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Various modifications and improvements made by those skilled in the art to the technical solutions of the present invention without departing from the spirit of the present invention should fall within the protection scope defined by the claims of the present invention.

Claims

1. A method for preparing quartz glass devices by ultraviolet light curing with the assistance of a temperature control device, characterized in that, Includes the following steps: Step S01: Preparation of glass slurry. The glass slurry is prepared by mixing nano-silica powder, monomers, crosslinking agent, plasticizer, photoinitiator, and polymerization inhibitor according to the specified mass percentages. Step S02: Mold preparation and slurry injection. The glass slurry is injected into the forming cavity of the mold; Step S03: Cooling system assembly and pre-cooling. The outer bottom surface of the cooling cavity is placed on the surface of the semiconductor refrigeration chip of the temperature-controlled cooling device. The temperature of the coolant is maintained at 0~25 ℃ through heat conduction, thereby providing a low-temperature environment for the slurry. Step S04: Low-temperature light curing. Under a low-temperature environment where the coolant is stable at 0~25 ℃, the slurry is irradiated and cured using a UV light source to form a green body; Step S05: Green body heat treatment. The cured green body is taken out and subjected to annealing, hot degreasing and sintering in sequence to obtain a dense quartz glass device.

2. Wherein, the monomer is hydroxyethyl methacrylate (HEMA), the crosslinking agent is selected from tetra(ethylene glycol) diacrylate (TEGDA) or polyethylene glycol diacrylate (PEGDA), the plasticizer is selected from diethyl phthalate (DEP) or diethylene glycol dibenzoate (DEDB), and the photoinitiator is selected from diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (TPO) or phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide (Irgacure 819).

3. The method for preparing a quartz glass device according to claim 1, characterized in that, The quartz glass slurry mentioned in step S01 comprises the following components: silica content of 40-60 wt%, monomer content of 24.8-37.2 wt%, crosslinking agent content of 2.8-4.2 wt%, plasticizer content of 12.4-18.6 wt%, and photoinitiator content of 0.25-1 wt% (based on the total mass of the slurry). The slurry is ultrasonically dispersed in a water bath for 4 h at an ultrasonic frequency of 40 kHz, with the water temperature maintained at 25-30 ℃.

4. The method for preparing a quartz glass device according to claim 1, characterized in that, In step S02, the mold material includes, but is not limited to, silicone or polydimethylsiloxane (PDMS), and the height of the mold is 10 mm above the slurry surface. In step S04, the coolant is an aqueous ethylene glycol solution. The ultraviolet light has a wavelength of 405 nm, a light intensity of 100~500 mW / cm², a curing time of 10~100 s, and an illumination distance of 10~20 cm.

5. The method for preparing the quartz glass device according to claim 1, characterized in that, In step S05, the annealing is performed by heating to 70-90 °C at a rate of 0.1-10 °C / s and holding at that temperature for 10-40 h. Degreasing is carried out in air, with temperatures increased to 190 °C, 253 °C, 338 °C, and 500 °C respectively at a rate of 0.5-1 °C / min, and held for 4 h. The sintering is performed at a temperature of 1×10⁻⁶. -2 The process is carried out in a vacuum of mbar. First, the temperature is increased to 1000 ℃ at 10 ℃ / min, then increased to 1300 ℃ at 3 ℃ / min, and held for 1~30 min. After sintering, the temperature is decreased to 500 ℃ at 5 ℃ / min, and then cooled to room temperature with the furnace to obtain a dense quartz glass device.

6. A temperature-controlled cooling system for assisting in the curing of glass slurry, characterized in that, include: The mold (1), the ultraviolet light source module (12), and the temperature control and cooling device. The temperature control and cooling device includes: a) A semiconductor cooling chip (6) with its cold end in contact with the bottom surface of the cooling cavity (2) to provide a controllable cold source. The semiconductor cooling chip (6) uses a thermoelectric cooling component with a cooling temperature range of -20 ℃ to 30 ℃ and a temperature control accuracy better than ±2 ℃. b) A heat dissipation device, connected to the hot end of the semiconductor cooling chip, for heat dissipation; c) An adjustable power adapter (11) is connected to a semiconductor cooling chip to adjust its power and achieve temperature control; d) Cooling chamber (2), used to contain the mold and coolant and maintain a low temperature environment; e) Temperature monitoring module for real-time monitoring of the temperature of mold (1) or slurry (3), the module employs a temperature sensor immersed in coolant or attached to the outer wall of mold.

7. The temperature-controlled cooling system according to claim 5, characterized in that, The temperature-controlled cooling device includes a copper pipe (8), a heat sink (9), and a fan (10). The upper end of the copper pipe (8) is fixed in the mounting hole of the support base plate (7) by an interference fit, and the lower end is connected to the heat sink (9) base plate. The heat sink (9) is composed of an array of aluminum fins with a fin thickness of 2.0 mm and a spacing of 2.0 mm. The base plate thickness is not less than 5 mm. Fans (10) are symmetrically installed at both ends of the heat sink. The rotation axis of the fans is parallel to the fin arrangement direction, thereby driving airflow through the fins to form an axial airflow channel.

8. The temperature-controlled cooling system according to claim 5, characterized in that, The cooling chamber (2) is a partially enclosed structure with an opening at the top to facilitate ultraviolet light irradiation and radially distributed heat-conducting fins (5) at the bottom, with a length, width, and height of 10 mm, 5 mm, and 1 mm, respectively, to enhance heat conduction. The cooling chamber is made of aluminum alloy and is used in conjunction with coolant to improve cooling efficiency.

9. The temperature-controlled cooling system according to claim 5, characterized in that, The ultraviolet light source module (12) is an LED array lamp with adjustable irradiation intensity and angle. The cooling cavity (2) is located below the ultraviolet light source module (12), allowing the ultraviolet light source module to irradiate the mold placed inside the cooling cavity. The temperature-controlled cooling system is used for low-temperature molding and reducing curing shrinkage during the photocuring process, enabling the fabrication of large-size quartz glass devices with a surface roughness of 1~5 nm.

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