Plasma generation module and substrate processing apparatus comprising the same

Abstract

The present application provides a kind of plasma generation module and the substrate processing device comprising it, the area between ion blocker and showerhead can also be carried out using plasma cleaning. According to one aspect of the present application, the plasma generation module for generating remote plasma in the upper portion of the process chamber of the substrate processing device includes: a high-frequency power supply; an upper electrode plate electrically connected with the high-frequency power supply; an ion blocker arranged below the upper electrode plate to form a first space; and a showerhead located below the ion blocker to form a second space. The showerhead and the ion blocker are each configured to selectively pass or cut off plasma by rotating a part of the area.

Description

Technical Field

[0001] The present invention relates to a plasma generation module for generating remote plasma and a substrate processing apparatus including the plasma generation module. Background Technology

[0002] Semiconductor (or display) manufacturing processes are the processes used to manufacture semiconductor devices on a substrate (e.g., a wafer), including processes such as exposure, evaporation, etching, ion implantation, and cleaning. To perform these processes, semiconductor manufacturing equipment is installed in the cleanroom of a semiconductor manufacturing plant to perform the processing on the substrates that are fed into the equipment.

[0003] In semiconductor manufacturing, plasma-based processes, such as etching and vapor deposition, are widely used. Along with methods that generate plasma inside a process chamber for processing, there are also methods that use remote plasma generated from outside the process chamber to perform processing on the substrate. For example, in an apparatus that uses neutral reactive species (free radicals) to process the substrate, an ion blocker is positioned below the upper electrode, and a nozzle is positioned below the ion blocker.

[0004] Plasma is generated to clean the interior of the process chamber, but the area between the ion blocker and the nozzle is a structure where plasma cannot be generated. Therefore, it is difficult to clean foreign matter remaining in this area. Summary of the Invention

[0005] The present invention provides a plasma generation module and a substrate processing apparatus that can perform plasma cleaning in the area between the ion blocker and the nozzle.

[0006] According to one aspect of the present invention, a plasma generation module for generating remote plasma in the upper part of the process chamber of a substrate processing apparatus includes: a high-frequency power supply; an upper electrode plate electrically connected to the high-frequency power supply; an ion blocker disposed below the upper electrode plate to form a first space; and a nozzle located below the ion blocker to form a second space. The nozzle and the ion blocker are each configured to selectively allow or block plasma by rotating a portion of their respective regions.

[0007] According to one aspect of the present invention, a plasma generation module for generating remote plasma in the upper part of the process chamber of a substrate processing apparatus includes: a high-frequency power supply; an upper electrode plate electrically connected to the high-frequency power supply; an ion blocker disposed below the upper electrode plate to form a first space; and a nozzle located below the ion blocker to form a second space. The nozzle and the ion blocker are each configured to selectively allow or block plasma by raising or lowering a portion of their respective regions.

[0008] The substrate processing apparatus according to the present invention includes: a process chamber forming a processing space for processing a substrate; a plasma generation module generating remote plasma at the upper part of the process chamber; a substrate support assembly disposed inside the processing space and supporting the substrate; and a gas supply module supplying process gas to the plasma generation module. The plasma generation module includes: a high-frequency power supply; an upper electrode plate electrically connected to the high-frequency power supply; an ion blocker disposed below the upper electrode plate to form a first space; and a nozzle located below the ion blocker to form a second space. The gas supply module includes: a first gas supply module supplying a first process gas to the first space; and a second gas supply module supplying a second process gas to the processing space. The nozzle and the ion blocker are each configured to selectively allow or block plasma by rotating or raising a portion of their respective regions.

[0009] According to the present invention, plasma can be allowed to flow into a second space that was previously a plasma blind zone by opening a portion of the ion blocker and nozzle, effectively cleaning foreign objects in that area. Attached Figure Description

[0010] Figure 1 A schematic structure of the substrate processing apparatus according to the present invention is shown.

[0011] Figure 2 as well as Figure 3 A simplified structure of a substrate processing apparatus, including a rotatable ion blocker and a nozzle, is shown.

[0012] Figure 4 The diagram shows a rotatable ion blocker, a fixed support block in the nozzle, and a rotating block.

[0013] Figure 5 The cross-section of the rotating block is shown.

[0014] Figure 6 as well as Figure 7 A simplified structure of a substrate processing apparatus, including an ion blocker that can be raised and lowered, and a nozzle, is shown.

[0015] Figure 8The image shows the fixed support block and the lifting block in an ion blocker that can be raised and lowered.

[0016] Figure 9 The fixed support block and the lifting block in the nozzle that can be raised and lowered are shown.

[0017] Figure 10 The cross-section of the lifting block is shown.

[0018] (Explanation of reference numerals in the attached diagram)

[0019] 1: Substrate processing device

[0020] 100: Process cavity

[0021] 200: Substrate support assembly

[0022] 300: Gas supply module

[0023] 400: Plasma Generation Module

[0024] 410: High-frequency power supply

[0025] 420: Upper electrode plate

[0026] 430: Ion Blocker

[0027] 433: Fixed support block

[0028] 435: Rotating block

[0029] 436: Lifting Block

[0030] 440: Sprayer head

[0031] 443: Fixed support block

[0032] 445: Rotating block

[0033] 446: Lifting block Detailed Implementation

[0034] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this invention pertains can readily implement it. The present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0035] To clearly illustrate the invention, irrelevant parts have been omitted, and the same or similar components are marked with the same reference numerals throughout the specification.

[0036] Furthermore, in multiple embodiments, the same reference numerals are used to describe only representative embodiments of the constituent elements having the same structure, while in other embodiments only structures different from the representative embodiments are described.

[0037] In the specification as a whole, when a part is described as being "connected (or combined)" with other parts, it includes not only the case of "direct connection (or combination)" but also the case of "indirect connection (or combination)" where other components are placed in between. Furthermore, when a part is described as "including" a constituent element, unless otherwise stated otherwise, it means that other constituent elements may be included, rather than excluding them.

[0038] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary knowledge in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having the same meaning as in the relevant technical context, and shall not be ideally or excessively interpreted as having a formal meaning unless expressly defined in this application.

[0039] This invention relates to a semiconductor manufacturing system for performing process processing on substrates W such as silicon wafers, and more particularly to a semiconductor manufacturing system that can remove specific substances from the substrate W through plasma treatment. The semiconductor manufacturing system is equipment installed in a cleanroom of a semiconductor manufacturing plant, such that if a substrate W is placed in the system, a predetermined process is performed on the substrate W, and the processed substrate W is then transferred to other equipment. The substrate processing apparatus 1 according to the invention is provided as part of the semiconductor manufacturing system.

[0040] Figure 1 A schematic structure of the substrate processing apparatus 1 according to the present invention is shown. In this text, the horizontal directions X and Y are the directions in which the substrate W is placed, and the vertical direction Z is the direction perpendicular to the plane (XY plane) in which the substrate W is placed. In this text, the Y direction is the first horizontal direction, the X direction is the second horizontal direction, and the Z direction is the vertical direction. The substrate processing apparatus 1 according to the present invention is an apparatus for performing plasma processing on an inserted substrate W.

[0041] Reference Figure 1 The substrate processing apparatus 1 according to the present invention includes a process chamber 100, a substrate support assembly 200, a gas supply module 300, and a plasma generation module 400. The process chamber 100 is composed of an upper chamber 110 having an upper electrode plate 420 and a lower chamber 120 including a processing space 101 for processing the substrate W. The process chamber 100 may be a circular cylindrical shape. The process chamber 100 may be made of a metallic material, such as aluminum. An opening 130 may be formed on one side wall of the process chamber 100, serving as an inlet / outlet for loading and unloading the substrate W. An exhaust port is provided on the bottom surface of the process chamber 100, functioning as an outlet for discharging byproducts generated in the processing space 101 to the outside of the process chamber 100. The exhaust operation is achieved by a pump.

[0042] A substrate support assembly 200 is disposed within the processing space 101 and supports the substrate W. The substrate support assembly 200 may be located on a structure 150 disposed at the bottom of the process chamber 100. The substrate support assembly 200 generally includes a ground plane 210, a cooling plate 220, and a support plate 230, on which the substrate W is placed. A focusing ring 240 for controlling the plasma distribution in the edge region of the substrate W is disposed on the outer side of the substrate W. Another high-frequency power supply (not shown) may be connected to the cooling plate 220 of the substrate support assembly 200.

[0043] The gas supply module 300 may supply process gas to the interior of the process chamber 100. The gas supply module 300 includes a first gas supply module 310 and a second gas supply module 320. The first gas supply module 310 may supply a first process gas to the first space 401 of the upper chamber 110. The first process gas may be a fluorine-containing gas, such as nitrogen trifluoride (NF3). The second gas supply module 320 may supply a second process gas to the processing space 101. The second process gas may be a nitrogen- and hydrogen-containing gas, such as ammonia (NH3). Thus, nitrogen trifluoride (NF3) may be excited into plasma form within the upper chamber 110. The plasma effluent reacts with ammonia (NH3) to form an etchant for etching a specific substance onto the substrate W. Alternatively, the first gas supply module 310 may also provide a third process gas, which may be an inert gas, such as argon (Ar) or neon (Ne). The third process gas can be supplied together with the first process gas to facilitate its movement.

[0044] The plasma generation module 400 includes a high-frequency power supply 410, an upper electrode plate 420, an ion blocker 430, and a nozzle 440, serving as a capacitively coupled plasma source. The upper electrode plate 420 is disposed in the upper cavity 110, and the high-frequency power supply 410 is connected to the upper electrode plate 420 and provides high-frequency power through an impedance matching device 411. The nozzle 440 can divide the upper cavity 110 and the lower cavity 120. The ion blocker 430 can be disposed in the upper cavity 110, and positioned between the upper electrode plate 420 and the nozzle 440. Alternatively, a first space 401 can be formed between the upper electrode plate 420 and the ion blocker 430, a second space 402 can be formed between the ion blocker 430 and the nozzle 440, and a processing space 101 can be provided below the nozzle 440. That is, the upper cavity 110 can provide the first space 401 and the second space 402, and the lower cavity 120 can provide the processing space 101.

[0045] The substrate processing apparatus 1 according to the present invention may have a first gas supply module 310 connected to an upper electrode plate 420, thereby supplying a first process gas and / or a third process gas to a first space 401 through the upper electrode plate 420. More specifically, the first process gas supplied by the first gas supply module 310 is provided to the first space 401 through a first gas supply hole 421 formed in the upper electrode plate 420. Furthermore, the substrate processing apparatus 1 according to the present invention supplies a high-frequency power supply 410 to the upper electrode plate 420, thereby exciting the first process gas supplied to the first space 401 into plasma form. The first process gas excited into plasma form includes free radicals, ions, and / or electrons.

[0046] The plasma formed in the first space 401 can pass through and be filtered by the ion blocker 430. That is, the ion blocker 430 can be connected to a static voltage. In the plasma effluent, free radicals or uncharged neutral species can be supplied to the second space 402 through a first through-hole 431 formed in the vertical direction of the ion blocker 430. In contrast, charged species (i.e., ions) cannot pass through the first through-hole 431 and are filtered. Thus, the filtered plasma effluent can pass through the first through-hole 431 and be supplied to the second space 402 through the ion blocker 430.

[0047] At this time, the nozzle 440 can be configured to connect to the second gas supply module 320, and the plasma effluent provided to the second space 402 can be provided to the processing space 101 through the nozzle 440. That is, the nozzle 440 may also include a second gas supply port 441 and a second through port 442. The second gas supply port 441 is configured to receive a second process gas from the second gas supply module 320 and provide the second process gas to the processing space 101. The second through port 442 is configured to communicate with the second space 402 so that the plasma effluent provided to the second space 402 can be provided to the processing space 101. Thus, the plasma effluent provided to the second space 402 can be provided to the processing space 101 through the second through port 442, and the plasma effluent reacts and mixes with the second process gas supplied through the second gas supply port 441, thereby processing the substrate.

[0048] Figure 2 as well as Figure 3 A simplified structure of a substrate processing apparatus 1, including a rotatable ion blocker 430 and a nozzle 440, is shown. Figure 2 as well as Figure 3 It is a simplified representation. Figure 1 Figure 1 of the substrate processing apparatus.

[0049] refer to Figure 2as well as Figure 3 An upper electrode plate 420 is disposed at the upper part of the process chamber 100, and a high-frequency power supply 410 is connected to the upper electrode plate 420. An ion blocker 430 is disposed below the upper electrode plate 420, and a nozzle 440 is disposed below the ion blocker 430. A first space 401 is formed between the upper electrode plate 420 and the ion blocker 430, and a second space 402 is formed between the ion blocker 430 and the nozzle 440.

[0050] If a first process gas is supplied to the first space 401 and high-frequency power is applied to the upper electrode plate 420 from the high-frequency power supply 410, a plasma P1 is formed in the first space 401 between the upper electrode plate 420 and the ion blocker 430. The first process gas excited into a plasma state includes free radicals, ions, and electrons.

[0051] Charged species (ions) in the plasma P1 formed in the first space 401 cannot pass through the ion blocker 430 and are filtered out, while uncharged neutral species (free radicals) pass through the ion blocker 430 and are supplied to the second space 402. In the second space 402, the plasma effluent from the ion blocker 430 is supplied to the processing space 101 through the nozzle 440. Additionally, a second process gas supplied to the nozzle 440 is supplied to the processing space 101. In the processing space 101, the plasma effluent and the second process gas are mixed together to perform a process treatment on the substrate W.

[0052] Ion blocker 430 and nozzle 440 are electrically grounded. The substrate W is placed on substrate support assembly 200. Substrate support assembly 200 can be connected to another high-frequency power supply.

[0053] Plasma can be used to clean the interior of the process chamber 100. When high-frequency power is applied to the upper electrode plate 420 and the ion blocker 430 is grounded, plasma P1 is formed in the first space 401. When high-frequency power is applied to the substrate support assembly 200 and the nozzle 440 is grounded, plasma P2 is formed in the processing space 101. At this time, cleaning can be performed in the first space 401 and the processing space 101 by the generated plasma, but no plasma is generated in the second space 402, making it difficult to remove foreign matter.

[0054] Therefore, the present invention allows the plasma in the first space 401 or processing space 101 to move to the second space 402 by rotating or raising / lowering a portion of the ion blocker 430 and the nozzle 440. If plasma is generated in the first space 401 or processing space 101, the ion blocker 430 and a portion of the nozzle 440 can rotate or raise / lower, thereby allowing the plasma to diffuse into the second space 402. Thus, foreign matter remaining in the second space 402 can be removed by plasma, thereby achieving cleaning of the second space 402.

[0055] Figure 3 The diagram shows a portion of the ion blocker 430 and nozzle 440 in a rotated state. The ion blocker 430 and nozzle 440 include fixed support blocks 433 and 443 whose positions and orientations are fixed, and rotating blocks 435 and 445 configured to rotate relative to the fixed support blocks 433 and 443. That is, the ion blocker 430 includes the fixed support block 433 and the rotating block 435, and the nozzle 440 includes the fixed support block 443 and the rotating block 445. The ion blocker 430 and nozzle 440 can be configured identically. Alternatively, at least one of the ion blocker 430 and nozzle 440 can be rotatably configured.

[0056] Figure 4 The image shows a rotatable ion blocker 430 and fixed support blocks 433, 443 and rotating blocks 435, 445 in the nozzle 440. Figure 4 The ion blocker 430 or nozzle 440 is shown as viewed from above. Fixed support blocks 433 and 443 are fixed to the inner wall of the process chamber 100. The fixed support blocks 433 and 443 are arranged along the inner periphery of the process chamber 100. A portion of the fixed support blocks 433 and 443 has an arc shape along the periphery of the inner wall of the process chamber 100, while the remaining portion has an angular shape.

[0057] Rotating blocks 435 and 445 are configured to rotate about rotation axes 437A and 447A extending in the first horizontal direction Y. Figure 4In this configuration, rotating blocks 435 and 445 are formed to have a long axis in the first horizontal direction Y. Rotating blocks 435 and 445 can be fixedly connected to rotating shafts 437A and 447A extending along the first horizontal direction Y. Rotating shafts 437A and 447A can be fixed in a state of being inserted into rotating blocks 435 and 445. Rotating shafts 437A and 447A can be respectively connected to a rotation drive unit 437B or 447B, such as a rotary motor. Rotating shafts 437A and 447A can be rotated by rotating drive units 437B and 447B. If rotating shafts 437A and 447A rotate, rotating blocks 435 and 445 can rotate. Through the rotation of rotating blocks 435 and 445, plasma can flow through ion blocker 430 or nozzle 440.

[0058] Figure 5 The cross-sections of rotating blocks 435 and 445 are shown. Figure 5 The cross-sections of rotating blocks 435 and 445 are shown on a plane formed by a second horizontal axis (X-axis) and a vertical axis (Z-axis). Rotating blocks 435 and 445 include: main bodies 435A and 445A having a major axis in a first horizontal direction Y and a minor axis in a second horizontal direction X perpendicular to the first horizontal direction Y; first protrusions 435B and 445B protruding from the upper part of one end of the main bodies 435A and 445A in the second horizontal direction (-X direction); and second protrusions 435C and 445C protruding from the lower part of the other end of the main bodies 435A and 445A in the opposite direction (+X direction) to the first protrusions 435B and 445B.

[0059] Rotating blocks 435 and 445 have first protrusions 435B and 445B and second protrusions 435C and 445C protruding from the upper and lower parts on both sides, centered on the main body portions 435A and 445A. The first protrusions 435B and 445B and the second protrusions 435C and 445C are engaged with adjacent fixed support blocks 433 and 443 or another rotating block 435 and 445. Figure 5 In the middle, the central rotating blocks 435 and 445 engage with the protrusions 433B and 443B of the right-side fixed support blocks 433 and 443, and with the second protrusions 435C and 445C of the left-side rotating blocks 435 and 445. The first protrusions 435B and 445B of the central rotating blocks 435 and 445 abut against the second protrusions 435C and 445C of the left-side rotating blocks 435 and 445. The second protrusions 435C and 445C of the central rotating blocks 435 and 445 abut against the protrusions 433B and 443B of the right-side fixed support blocks 433 and 443. Not only in the second horizontal direction X, but also relative to the first horizontal direction Y, the first protrusions 435B and 445B and the second protrusions 435C and 445C can be formed at both ends of the main body portions 435A and 445A.

[0060] A sealing member 440S is inserted into the space between the first protrusions 435B, 445B and the second protrusions 435C, 445C and the fixed support blocks 433, 443 or another rotating block 435, 445. The sealing member 440S may be an O-ring. The sealing member 440S may be formed of silicon material. The sealing member 440S may be installed below the first protrusions 435B, 445B or above the second protrusions 435C, 445C. The sealing member 440S may be installed below the first protrusions 435B, 445B or above the second protrusions 435C, 445C by an adhesive or fastening member. The sealing member 440S may be formed along the periphery of the main body portions 435A, 445A below the first protrusions 435B, 445B or above the second protrusions 435C, 445C.

[0061] Figure 6 as well as Figure 7 A simplified structure of the substrate processing apparatus 1, including an ion blocking device 430 capable of being raised and lowered, and a nozzle 440, is shown. Figure 3 as well as Figure 4 compared to, Figure 6 as well as Figure 7 A portion of the ion blocker 430 and the nozzle 440 can rise or fall. Figure 6 This shows the ion blocker 430 and the nozzle 440 in a sealed state. Figure 7 The image shows the raised and lowered state of the ion blocker 430 and a portion of the nozzle 440.

[0062] The ion blocker 430 and the nozzle 440 include fixed support blocks 433 and 443 whose positions and orientations are fixed, and lifting blocks 436 and 446 configured to move up and down relative to the fixed support blocks 433 and 443. That is, the ion blocker 430 includes the fixed support block 433 and the lifting block 436, and the nozzle 440 includes the fixed support block 443 and the lifting block 446. The ion blocker 430 and the nozzle 440 can be configured identically. Alternatively, at least one of the ion blocker 430 and the nozzle 440 can be configured to move up and down.

[0063] Fixed support blocks 433 and 443 are fixed to the inner wall of the process cavity 100. Fixed support blocks 433 and 443 are arranged along the inner periphery of the process cavity 100. A portion of the fixed support blocks 433 and 443 has an arc shape along the periphery of the inner wall of the process cavity 100, and the remaining portion has an angular shape.

[0064] In the ion blocker 430 and the nozzle 440, the lifting and lowering parts can be configured to be staggered. The lifting block 436 of the ion blocker 430 includes a first lifting block 436a and a second lifting block 436b arranged alternately with each other. The lifting block 446 of the nozzle 440 includes a first lifting block 446a and a second lifting block 446b arranged alternately with each other. Figure 7 In the ion blocker 430, the first lifting block 436a can descend relative to the fixed support block 433 and the second lifting block 436b. Here, the second lifting block 436b can be fixed in position or raised. Similarly, the first lifting block 446a of the nozzle 440 can descend relative to the fixed support block 443 and the second lifting block 446b. Here, the second lifting block 446b can be fixed in position or raised.

[0065] The first lifting block 436a of the ion blocker 430 and the first lifting block 446a of the nozzle 440 can be staggered from each other. The first lifting block 436a of the ion blocker 430 and the first lifting block 446a of the nozzle 440 can rise or fall together. Similarly, the second lifting block 436b of the ion blocker 430 and the second lifting block 446b of the nozzle 440 can be staggered from each other. The second lifting block 436b of the ion blocker 430 and the second lifting block 446b of the nozzle 440 can rise or fall together.

[0066] Figure 8The diagram illustrates a fixed support block 433 and lifting blocks 436a and 436b in a height-adjustable ion blocker 430. The first lifting block 436a may be raised and lowered via first drive units 438aA and 438aB, and the second lifting block 436b may be raised and lowered via second drive units 438bA and 438bB, independent of the first drive units 438aA and 438aB. The first drive units 438aA and 438aB may include a first drive shaft 438aA and a first linear drive unit 438aB. The second drive units 438bA and 438bB may include a second drive shaft 438bA and a second linear drive unit 438bB. The first drive shaft 438aA and the second drive shaft 438bA may extend from inside the process chamber 100 to the outside of the process chamber 100 via sidewalls. The first linear drive unit 438aB and the second linear drive unit 438bB may be located outside the process chamber 100. The cavity wall of the process chamber 100 may be provided with slits for the movement of the first drive shaft 438aA and the second drive shaft 438bA, and sealing components for sealing the internal space of the process chamber 100 when the first drive shaft 438aA and the second drive shaft 438bA move along the slits. In the ion blocker 430, the lifting blocks 436a and 436b may contact the inner wall of the process chamber 100, and the sealing components for sealing between the lifting blocks 436a and 436b and the inner wall of the process chamber 100 may be located on the outside of the lifting blocks 436a and 436b.

[0067] The first lifting block 436a and the second lifting block 436b are configured to be raised and lowered via a first drive shaft 438aA and a second drive shaft 438bA extending in the first horizontal direction Y. Figure 8In this configuration, the first lifting block 446a and the second lifting block 446b are formed to have a long axis in the first horizontal direction Y. The first lifting block 436a and the second lifting block 436b can be fixedly connected to a first drive shaft 438aA and a second drive shaft 438bA extending along the first horizontal direction Y. The first drive shaft 438aA and the second drive shaft 438bA can be fixed in a state where they are inserted inside the first lifting block 436a and the second lifting block 436b. The first drive shaft 438aA and the second drive shaft 438bA can be respectively connected to a first linear drive unit 438aB and a second linear drive unit 438bB, such as a linear motor or cylinder. The first drive shaft 438aA and the second drive shaft 438bA can be raised and lowered via the first linear drive unit 438aB and the second linear drive unit 438bB. If the first drive shaft 438aA and the second drive shaft 438bA move in the vertical direction Z, then the first lifting block 436a and the second lifting block 436b can also move in the vertical direction Z. Through the lifting or lowering of either the first lifting block 436a or the second lifting block 436b, plasma can flow through the ion blocker 430. Alternatively, one of the first lifting block 436a and the second lifting block 436b can move while the other remains stationary.

[0068] Figure 9 The diagram shows a fixed support block 443 and lifting blocks 446a and 446b in a liftable nozzle 440. The first lifting block 446a may be lifted and lowered via first drive units 448aA and 448aB, and the second lifting block 446b may be lifted and lowered via second drive units 448bA and 448bB, independent of the first drive units 448aA and 448aB. The first drive units 448aA and 448aB may include a first drive shaft 448aA and a first linear drive unit 448aB. The second drive units 448bA and 448bB may include a second drive shaft 448bA and a second linear drive unit 448bB. The first drive shaft 448aA and the second drive shaft 448bA may extend from inside the process chamber 100 to the outside of the process chamber 100 via sidewalls. The first linear drive unit 448aB and the second linear drive unit 448bB may be located outside the process chamber 100. The cavity wall of the process cavity 100 may be provided with slits for the movement of the first drive shaft 448aA and the second drive shaft 448bA, and sealing components for sealing the internal space of the process cavity 100 when the first drive shaft 448aA and the second drive shaft 448bA move along the slits.

[0069] The first lifting block 446a and the second lifting block 446b are configured to be raised and lowered via a first drive shaft 448aA and a second drive shaft 448bA extending in the first horizontal direction Y. Figure 9In this design, the first lifting block 446a and the second lifting block 446b are formed to have a long axis in the first horizontal direction Y. The first lifting block 446a and the second lifting block 446b can be fixedly connected to a first drive shaft 448aA and a second drive shaft 448bA extending along the first horizontal direction Y. The first drive shaft 448aA and the second drive shaft 448bA can be fixed in a state where they are inserted inside the first lifting block 446a and the second lifting block 446b. The first drive shaft 448aA and the second drive shaft 448bA can be respectively connected to a first linear drive unit 448aB and a second linear drive unit 448bB, such as a linear motor or a cylinder. The first drive shaft 448aA and the second drive shaft 448bA can be raised and lowered via the first linear drive unit 448aB and the second linear drive unit 448bB. If the first drive shaft 448aA and the second drive shaft 448bA move in the vertical direction Z, then the first lifting block 446a and the second lifting block 446b can also move in the vertical direction Z. Through the lifting or lowering of either the first lifting block 446a or the second lifting block 446b, plasma can flow through the nozzle 440. Alternatively, one of the first lifting block 446a or the second lifting block 446b may move while the other remains stationary.

[0070] Alternatively, the first lifting block 436a of the ion blocker 430 and the first lifting block 446a of the nozzle 440 can rise and fall together, while the second lifting block 436b of the ion blocker 430 and the second lifting block 446b of the nozzle 440 are fixed together with the fixed support blocks 433 and 443. Or, the second lifting block 436b of the ion blocker 430 and the second lifting block 446b of the nozzle 440 can rise and fall together, while the first lifting block 436a of the ion blocker 430 and the first lifting block 446a of the nozzle 440 are fixed together with the fixed support blocks 433 and 443. That is, when the first lifting blocks 436a and 446a rise or fall relative to the fixed support blocks 433 and 443, the second lifting blocks 436b and 446b can be at the same height as the fixed support blocks 433 and 443. Conversely, when the second lifting blocks 436b and 446b rise or fall relative to the fixed support blocks 433 and 443, the first lifting blocks 436a and 446a can be at the same height as the fixed support blocks 433 and 443.

[0071] Figure 10 The cross-sections of lifting blocks 436 and 446 are shown. Figure 10 In (a), in the ion blocker 430, a first lifting block 436a and a fixed support block 433 are provided on both sides of the second lifting block 436b. Figure 10In (b), a nozzle 440 is disposed below the ion blocker 430, and second lifting blocks 446b and fixed support blocks 443 are disposed on both sides of the first lifting block 446a of the nozzle 440. In the ion blocker 430 and the nozzle 440, the first lifting blocks 436a, 446a and the second lifting blocks 436b, 446b can be staggered from each other.

[0072] According to the present invention, protrusions protruding in opposite directions along the horizontal direction X are formed at both ends of the lifting blocks 436 and 446. Figure 10 In the ion block 430, protrusions 436aA are formed at the lower parts of both ends of the first lifting block 436a. Protrusions 436bA are formed at the upper parts of both ends of the second lifting block 436b. Protrusions 446aA are formed at the upper parts of both ends of the first lifting block 446a in the nozzle 440. Protrusions 446bA are formed at the lower parts of both ends of the second lifting block 446b in the nozzle 440.

[0073] Each protrusion can engage with a protrusion of the fixed support block 433 or another adjacent lifting block. Figure 10 In (a), the protrusion 436bA of the second lifting block 436b of the ion blocker 430 is combined with the adjacent fixed support block 433 or the first lifting block 436a. Figure 10 In (a), the right protrusion 436bA of the second lifting block 436b engages with the protrusion 433A of the right fixed support block 433, and the left protrusion 436bA of the second lifting block 436b engages with the protrusion 436aA of the left first lifting block 436a. The protrusions 436bA formed on both sides of the second lifting block 436b abut against the protrusions 436aA of the first lifting block 436a and the protrusions 433A of the fixed support block 433.

[0074] exist Figure 10 In (b), the protrusion 446bA of the first lifting block 446a of the nozzle 440 is engaged with the adjacent fixed support block 443 or the second lifting block 446b. Figure 10 In (b), the right protrusion 446aA of the first lifting block 446a engages with the protrusion 443A of the right fixed support block 443, and the left protrusion 446aA of the first lifting block 446a engages with the protrusion 446bA of the left second lifting block 446b. The protrusions 446aA formed on both sides of the first lifting block 446a abut against the protrusions 446bA of the second lifting block 446b and the protrusions 443A of the fixed support block 443.

[0075] exist Figure 10In (a), a sealing member 430S can be installed between the protrusion 436bA of the second lifting block 436b of the sealed ion blocker 430 and the fixed support block 433 or the protrusion 436aA of the adjacent first lifting block 436a. Figure 10 In (b), a sealing member 440S can be installed in the space between the protrusion 446aA of the first lifting block 446a of the sealing nozzle 440 and the fixed support block 443 or the protrusion 446bA of the adjacent second lifting block 446b. The sealing members 430S and 440S can be inserted above the lower protrusion or below the upper protrusion. The sealing members 430S and 440S can be installed on the protrusions 436aA and 446bA using an adhesive or fastening member. The sealing members 430S and 440S can be formed along the periphery of the lifting block.

[0076] This embodiment and the accompanying drawings are merely illustrative of a portion of the technical concept included in this invention. It is obvious that variations and specific embodiments that can be readily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of this invention are all included within the scope of the claims of this invention.

[0077] Therefore, the concept of the present invention should not be limited to the illustrated embodiments, not only to the appended claims, but also to any equivalent or modified versions thereof.

Claims

1. A plasma generation module for generating remote plasma in the upper part of a process cavity of a substrate processing apparatus, the plasma generation module comprising: High-frequency power supply; The upper electrode plate is electrically connected to the high-frequency power supply. An ion blocker is disposed below the upper electrode plate to form a first space; as well as The nozzle, located below the ion blocker, forms a second space. The nozzle and the ion blocker are each configured to selectively allow or block plasma by rotating a portion of the region.

2. The plasma generation module according to claim 1, wherein, The ion blocker and the nozzle each include: The fixed support block has its position and orientation fixed; and The rotating block is configured to rotate relative to the fixed support block.

3. The plasma generation module according to claim 2, wherein, The fixed support block is fixed to the inner wall of the process cavity.

4. The plasma generation module according to claim 2, wherein, The rotating block is configured to rotate about a rotation axis extending in a first horizontal direction.

5. The plasma generation module according to claim 4, wherein, The rotating block includes: The main body has a long axis in the first horizontal direction and a short axis in a second horizontal direction perpendicular to the first horizontal direction; A first protrusion protrudes from the upper part of one end of the main body portion in the second horizontal direction; and The second protrusion protrudes from the lower part of the other end of the main body in the opposite direction to the first protrusion.

6. The plasma generation module according to claim 5, wherein, The first protrusion and the second protrusion are combined with the adjacent fixed support block or another rotating block.

7. The plasma generation module according to claim 6, wherein, A sealing component is inserted to seal the space between the first protrusion and the second protrusion and the fixed support block or the other rotating block.

8. The plasma generation module according to claim 7, wherein, The sealing component is installed below the first protrusion or above the second protrusion.

9. A plasma generation module for generating remote plasma in the upper part of a process cavity of a substrate processing apparatus, the plasma generation module comprising: High-frequency power supply; The upper electrode plate is electrically connected to the high-frequency power supply. An ion blocker is disposed below the upper electrode plate to form a first space; as well as The nozzle, located below the ion blocker, forms a second space. The nozzle and the ion blocker are each configured to selectively allow or block plasma by raising or lowering a portion of the region.

10. The plasma generation module according to claim 9, wherein, The ion blocker and the nozzle each include: The fixed support block has its position and orientation fixed; and The lifting block is configured to be able to move up and down relative to the fixed support block.

11. The plasma generation module according to claim 10, wherein, The fixed support block is fixed to the inner wall of the process cavity.

12. The plasma generation module according to claim 10, wherein, The lifting block includes a first lifting block and a second lifting block arranged alternately with each other. The first lifting block is raised and lowered by a first driving unit, and the second lifting block is raised and lowered by a second driving unit that is independent of the first driving unit.

13. The plasma generation module according to claim 12, wherein, When the first lifting block rises or falls relative to the fixed support block, the second lifting block is at the same height as the fixed support block.

14. The plasma generation module according to claim 13, wherein, In the ion blocker and the nozzle, the first lifting block and the second lifting block are staggered from each other.

15. The plasma generation module according to claim 10, wherein, At both ends of the lifting block, protrusions are formed that bulge out in opposite directions along the horizontal direction. The protrusion is engaged with the protrusion of the fixed support block or another adjacent lifting block.

16. The plasma generation module according to claim 15, wherein, A sealing component is installed to seal the space between the protrusion of the lifting block and the protrusion of the fixed support block or another adjacent lifting block.

17. A substrate processing apparatus, wherein, include: The process cavity forms a processing space for processing the substrate; A plasma generation module generates remote plasma in the upper part of the process cavity; A substrate support assembly is disposed inside the processing space and supports the substrate; as well as The gas supply module supplies process gas to the plasma generation module. The plasma generation module includes: High-frequency power supply; The upper electrode plate is electrically connected to the high-frequency power supply. An ion blocker is disposed below the upper electrode plate to form a first space; and The nozzle, located below the ion blocker, forms a second space. The gas supply module includes: A first gas supply module supplies a first process gas to the first space; and The second gas supply module supplies the second process gas to the processing space. The nozzle and the ion blocker are each configured to selectively allow or block plasma by rotating or raising a portion of the region.

18. The substrate processing apparatus according to claim 17, wherein, The ion blocker and the nozzle each include: The fixed support block is fixed in position and orientation to the inner wall of the process cavity; and The rotating block is configured to rotate relative to the fixed support block about a rotation axis extending in a first horizontal direction.

19. The substrate processing apparatus according to claim 17, wherein, The ion blocker and the nozzle each include: The fixed support block is fixed in position and orientation to the inner wall of the process cavity; and The lifting block is configured to be able to move relative to the fixed support block via a lifting drive unit that extends in a first horizontal direction and moves up and down in a vertical direction.

20. The substrate processing apparatus according to claim 17, wherein, If plasma is generated in the first space and the processing space, the ion blocker and part of the nozzle rotate or rise and fall, thereby causing the plasma to diffuse into the second space.

Images