A method for preparing quantum dot pattern based on micro-area induced electrodeposition

Abstract

This application belongs to the field of micro-nano fabrication technology and discloses a method for patterning quantum dots based on micro-region induced electrodeposition. The method includes placing an induced template and a deposition substrate opposite each other to form a gap, injecting a quantum dot solution into the gap to form a patterned capillary bridge, and applying an electric field to deposit the quantum dots to form a pattern. This method utilizes the synergistic effect of capillary force and electric field force to achieve precise positioning and patterning of quantum dots while avoiding damage to the quantum dot structure. This allows for the efficient and low-cost fabrication of high-quality quantum dot patterns, overcoming the limitations of existing methods such as photolithography, laser direct writing, and inkjet printing.

Description

Technical Field

[0001] This application relates to the field of micro-nano fabrication technology, and more specifically, to a method for preparing quantum dots based on micro-region induced electrodeposition. Background Technology

[0002] Quantum dots are quasi-zero-dimensional semiconductor nanomaterials, typically ranging in size from 1 nanometer to 10 nanometers. Their dimensions in all three dimensions are usually less than twice the exciton Boltzmann radius of their corresponding bulk materials, exhibiting a quantized energy spectrum and unique optoelectronic properties. They have significant application value in fields such as displays, lasers, and photoelectric detection.

[0003] Patterning technology is a key technology for the commercial application of quantum dot materials. Existing techniques for quantum dot patterning mainly include photolithography, laser direct writing, and inkjet printing. However, these techniques have many drawbacks that limit the fabrication of high-quality quantum dot patterns.

[0004] Photolithography is a complex process requiring sophisticated equipment. Furthermore, the high-energy ultraviolet radiation and developing solutions used in its manufacturing process can cause irreversible damage to the properties of quantum dots. This not only increases production costs but may also reduce the quality and performance of the final product.

[0005] Laser direct writing can easily damage the structure of quantum dots, making it difficult to form stable luminescent quantum dot patterns. Although this method can achieve precise patterning, the damage to the quantum dots themselves may lead to a significant reduction in their photoelectric properties, thus affecting the final application results.

[0006] The shape and quality of quantum dot patterns obtained by inkjet printing are limited by the coffee ring effect of the printing ink, making it difficult to form high-quality quantum dot patterns. Although this method is simple to operate, the mass migration during droplet evaporation often leads to quantum dot accumulation at the edges of the pattern and sparse quantum dots in the central region, affecting the uniformity and quality of the pattern.

[0007] These existing technologies struggle to simultaneously meet the requirements of high efficiency, low cost, and high quality, thus severely hindering the widespread application of quantum dots in various fields. Therefore, developing a new method for efficiently and cost-effectively fabricating high-quality quantum dot patterns has become particularly important.

[0008] To address the aforementioned issues, existing technologies urgently need improvement. Summary of the Invention

[0009] The purpose of this application is to provide a method for preparing quantum dot patterns based on micro-region induced electrodeposition, which can efficiently and cost-effectively prepare high-quality quantum dot patterns.

[0010] This application provides a method for patterning quantum dots based on micro-region induced electrodeposition, including the following steps: A1. An induction template and a deposition substrate are placed opposite each other, with the feature surface of the induction template facing the processed surface of the deposition substrate, so as to form a gap between the feature surface and the processed surface; the feature surface is provided with patterned grooves, and the wettability of the inner surface of the patterned grooves is lower than that of the feature surface. A2. Injecting a quantum dot solution into the gap between the feature surface and the processing surface, thereby causing the quantum dot solution to flow along the patterned concave lines under the action of capillary force, forming a patterned capillary bridge with one side connected to the processing surface and the other side located in the patterned concave lines; A3. An electric field is applied to the patterned capillary bridge, causing the quantum dots in the patterned capillary bridge to be deposited on the processing surface under the action of the electric field force to form a quantum dot pattern.

[0011] This method utilizes the synergistic effect of capillary force and electric field force to achieve precise positioning and patterning of quantum dots while avoiding damage to the quantum dot structure. This allows for the efficient and low-cost preparation of high-quality quantum dot patterns, overcoming the limitations of existing methods such as photolithography, laser direct writing, and inkjet printing.

[0012] Preferably, the height of the gap between the feature surface and the processing surface is 500nm-10μm.

[0013] By limiting the gap height to the range of 500nm-10μm, both the quantum dot solution can flow sufficiently and sufficient capillary force can be maintained, thereby achieving high-quality quantum dot patterning preparation.

[0014] Optionally, both the induction template and the deposition substrate are conductive. In step A3, an electric field is applied to the patterned capillary bridge by connecting the induction template and the deposition substrate to the positive and negative terminals of a power source, respectively.

[0015] Optionally, in step A3, the induction template and the deposition substrate are placed between two electrode plates, and the two electrode plates are respectively connected to the positive and negative terminals of a power supply to apply an electric field to the patterned capillary bridge.

[0016] Preferably, the surface of the quantum dots is modified with ligands; the ligands are PEG-COOH or PEG-NH2.

[0017] Ligand modification can improve the dispersibility and stability of quantum dots in solution. PEG-COOH or PEG-NH2 ligand modification can form a protective layer on the surface of quantum dots, preventing their aggregation. PEG segments have good hydrophilicity, which can enhance the dispersibility of quantum dots in aqueous solution. At the same time, COOH and NH2 groups can provide charge, further enhancing the stability of quantum dots.

[0018] Preferably, the quantum dots include one or more of CdSe / ZnS quantum dots, ZnSe / ZnS quantum dots, InP / ZnS quantum dots, carbon quantum dots, and perovskite quantum dots; the solvent of the quantum dot solution is water, an organic solvent, or an ionic liquid.

[0019] Preferably, the inducing template is a highly doped silicon pillar template.

[0020] Preferably, the deposition substrate is an ITO substrate, a metal substrate, or a highly doped silicon substrate.

[0021] Preferably, the step A1 is preceded by the following step: A0. Preparation of inducing template; Step A0 specifically includes: The induction template substrate is polished on one side, with the polished surface used as the feature surface; Patterned concave textures are etched onto the feature surface using photolithography. A positive photoresist is coated on the feature surface, exposing the patterned grooves; The inducing template substrate is placed in a vacuum dryer, and silane is added to the vacuum dryer. The vacuum dryer is then evacuated to vaporize the silane and allow it to adhere to the inner surface of the patterned grooves. After the inducing template substrate is heated and cured, the positive photoresist on the feature surface is removed to obtain the inducing template.

[0022] Preferably, the silane is perfluorooctyltrichlorosilane, perfluorooctyltrimethoxysilane, octadecyltrimethoxysilane, or octadecyltrichlorosilane.

[0023] Beneficial Effects: The quantum dot patterning preparation method based on micro-region induced electrodeposition provided in this application includes placing an induced template and a deposition substrate opposite each other to form a gap, injecting a quantum dot solution into the gap to form a patterned capillary bridge, and applying an electric field to deposit the quantum dots to form a pattern. This method achieves precise positioning and patterning of quantum dots by utilizing the synergistic effect of capillary force and electric field force, while avoiding damage to the quantum dot structure. This allows for the efficient and low-cost preparation of high-quality quantum dot patterns, overcoming the limitations of existing methods such as photolithography, laser direct writing, and inkjet printing. Attached Figure Description

[0024] Figure 1 A flowchart of a quantum dot patterning preparation method based on micro-region induced electrodeposition provided in this application embodiment.

[0025] Figure 2 This is a schematic diagram of an electrodeposition device.

[0026] Figure 3 A schematic diagram illustrating the principle of the quantum dot patterning preparation method based on micro-region induced electrodeposition provided in this application embodiment.

[0027] Figure 4 This is a schematic diagram of the structure of an induced template.

[0028] Figure 5 To utilize Figure 4 Quantum dot patterns obtained by inducing templates.

[0029] Figure 6 This is a schematic diagram of another type of induced template.

[0030] Figure 7 To utilize Figure 6 Quantum dot patterns obtained by inducing templates. Detailed Implementation

[0031] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0032] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0033] Quantum dots, as semiconductor nanomaterials with unique optoelectronic properties, have significant application value in fields such as displays, lasers, and photodetectors. However, applying quantum dot materials to practical products faces the challenge of patterned fabrication. Existing quantum dot patterning techniques, such as photolithography, laser direct writing, and inkjet printing, have numerous problems in practical applications. These methods generally suffer from cumbersome procedures, high costs, and low quantum dot pattern quality, severely hindering the commercial application of quantum dot materials.

[0034] Specifically, while photolithography can achieve fine patterning, its complex process and reliance on high-end equipment result in high production costs. More importantly, the high-energy ultraviolet rays and developing solutions used in photolithography can cause irreversible damage to the structure and performance of quantum dots, thus reducing the photoelectric performance of the final product. Laser direct writing, while offering some flexibility, easily damages the quantum dot structure during patterning, making it difficult to form stable, light-emitting quantum dot patterns—a serious drawback for display devices requiring long-term stable operation. Inkjet printing, although simple to operate, is affected by the coffee ring effect, making it difficult to form uniform, high-quality quantum dot patterns, directly impacting the performance and reliability of the final device.

[0035] Therefore, developing a novel method for fabricating quantum dot patterns that is efficient, low-cost, and guarantees high quality has become crucial for advancing quantum dot display technology. To address this issue, this application provides an innovative method for fabricating quantum dot patterning.

[0036] Please refer to Figure 1 A method for fabricating quantum dots based on micro-region induced electrodeposition, as described in some embodiments of this application, includes the following steps: A1. The induction template and the deposition substrate are placed opposite each other, so that the feature surface of the induction template faces the processed surface of the deposition substrate, so as to form a gap between the feature surface and the processed surface; the feature surface is provided with patterned concave textures, and the wettability of the inner surface of the patterned concave textures is lower than that of the feature surface. A2. Inject quantum dot solution into the gap between the feature surface and the machining surface, so that the quantum dot solution flows along the patterned concave texture under the action of capillary force, forming a patterned capillary bridge with one side connected to the machining surface and the other side located in the patterned concave texture; A3. An electric field is applied to the patterned capillary bridge, causing the quantum dots in the patterned capillary bridge to be deposited on the processing surface under the action of the electric field force to form a quantum dot pattern.

[0037] This method utilizes the synergistic effect of capillary force and electric field force to achieve precise positioning and patterning of quantum dots while avoiding damage to the quantum dot structure. This allows for the efficient and low-cost preparation of high-quality quantum dot patterns, overcoming the limitations of existing methods such as photolithography, laser direct writing, and inkjet printing.

[0038] The inducing template refers to a template used to guide the formation of a specific pattern in a quantum dot solution. It achieves this by creating patterned concave lines on one side to guide the flow of the quantum dot solution under capillary force, forming patterned capillary bridges. In this application, the side of the inducing template with the patterned concave lines is referred to as the feature surface. For example... Figure 2 , Figure 3 In this context, 'a' represents the induced template.

[0039] Among them, patterned concave textures refer to groove structures with specific patterns set on the feature surface of the inducing template. The shape of the patterned concave textures can be set according to actual needs, for example... Figure 4 The graphic concave pattern 'c' in the image is in the form of straight lines. Figure 6 The graphic concave pattern d in the image is arranged in a circular array.

[0040] The depth of the graphic concave texture can be set according to actual needs, for example, it can be set to 10μm-25μm.

[0041] Among them, patterned capillary bridges refer to liquid structures formed by quantum dot solutions under capillary forces, connecting the processing surface of the deposition substrate and the patterned concave texture of the induced template. For example... Figure 3 In the diagram, e represents a graphical capillary bridge, and f represents a quantum dot.

[0042] In this context, the deposition substrate refers to the target workpiece for quantum dot deposition. In this application, the side of the deposition substrate where quantum dots need to be deposited is referred to as the processing surface. For example... Figure 2 , Figure 3 In the diagram, b represents the sedimentary substrate.

[0043] The core innovation of this application lies in combining micro-area induction and electrodeposition techniques. A specially designed induction template guides the quantum dot solution to form a predetermined pattern, and an electric field is used to achieve precise deposition of the quantum dots. This method simplifies the preparation process, reduces costs, and simultaneously improves the quality of the quantum dot patterns.

[0044] The gap between the feature surface and the machined surface can be adjusted according to actual needs. Preferably, the height of the gap between the feature surface and the machined surface is 500nm-10μm.

[0045] An appropriate gap height is crucial for the formation of stable capillary bridges. If the gap is too small, it may impede the flow of the quantum dot solution; if the gap is too large, effective capillary action may not be possible. By limiting the gap height to the range of 500 nm to 10 μm, sufficient flow of the quantum dot solution is ensured while maintaining adequate capillary force, thus enabling high-quality quantum dot patterning fabrication.

[0046] The clearance height between the feature facet and the processed surface can be achieved in several ways. For example, precision spacers or micrometer-scale shims can be used to control the clearance height. Another method utilizes microelectromechanical systems (MEMS) technology to achieve the desired clearance height by precisely controlling the distance between the induced template and the deposition substrate. Alternatively, one could use... Figure 2 The electrodeposition apparatus shown is used to adjust the gap height between the feature surface and the processing surface. The apparatus includes a three-axis adjustment mechanism g, a two-axis adjustment mechanism h, an angle adjustment mechanism i, a mounting bracket j, a workpiece stage k, a microscopic alignment device l, and a power control device m. The mounting bracket j is used to clamp the induction template a, the workpiece stage k is used to place the deposition substrate b to be processed, the three-axis adjustment mechanism g is used to adjust the three-axis position of the mounting bracket j (x-axis, y-axis, z-axis, where the x-axis and y-axis are horizontal axes, and the z-axis is a vertical axis), the two-axis adjustment mechanism h is used to adjust the horizontal dual-axis position (x-axis and y-axis) of the workpiece stage k, the angle adjustment mechanism i is used to adjust the rotation angle of the workpiece stage k (rotation angle about the z-axis), the microscopic alignment device l is used to observe the alignment of the induction template a and the deposition substrate b, and the power control device m is used to provide a voltage for forming an electric field to the induction template a and the deposition substrate b, and can adjust the magnitude of this voltage.

[0047] The choice of gap height is closely related to the properties of the quantum dot solution, the size of the patterned grooves, and the required capillary action intensity. Within the range of 500 nm to 10 μm, the optimal gap height can be selected based on specific application requirements. For example, a smaller gap height may be more suitable for smaller quantum dots or lower viscosity solutions, while a larger gap height may be required for larger quantum dots or higher viscosity solutions.

[0048] By controlling the gap height, the technical solution of this application exhibits a positive interaction with the previously described features such as the induced template, deposition substrate, and patterned concave texture. An appropriate gap height ensures that the quantum dot solution can fully fill the patterned concave texture while maintaining sufficient capillary force to form stable liquid bridges. This interaction not only improves the formation efficiency of the quantum dot pattern but also significantly enhances the quality and precision of the pattern.

[0049] Under the influence of an electric field, charged quantum dots migrate towards the deposition substrate. Due to the presence of patterned capillary bridges, the movement of the quantum dots is confined within a specific pattern. This controlled migration and deposition process allows the final quantum dot pattern to precisely replicate the pattern on the induced template. There are several ways to apply the electric field.

[0050] For example, in some implementations, such as Figure 2 , Figure 3 As shown, both the induced template and the deposition substrate are conductive. In step A3, an electric field is applied to the patterned capillary bridge by connecting the induced template and the deposition substrate to the positive and negative terminals of a power source, respectively.

[0051] This method simplifies the electric field application process by directly using the conductivity of the induced template and the deposition substrate as electrodes. Compared to using additional electrode plates, this method is simpler, more direct, and allows for more precise control of the electric field distribution, which is beneficial for achieving precise quantum dot deposition.

[0052] When using this method, an electric current is generated between the induced template and the deposition substrate, increasing the deposition rate. Preferably, the current density is controlled at 0.001 A / dm³. 2 -10A / dm 2 .

[0053] The patterned grooves on the induced template not only form patterned capillary bridges but also participate in the formation of the electric field through their conductivity. This design allows the electric field distribution to closely match the distribution of the quantum dot solution, thus achieving more precise control over quantum dot deposition. Simultaneously, the deposition substrate serves as both an electrode and a deposition carrier for the quantum dots, simplifying the overall device structure and improving fabrication efficiency.

[0054] For example, in other embodiments, in step A3, the induction template and the deposition substrate are placed between two electrode plates, and the two electrode plates are respectively connected to the positive and negative terminals of a power supply (the electrode plate closer to the induction template is connected to the positive terminal, and the electrode plate closer to the deposition substrate is connected to the negative terminal) to apply an electric field to the patterned capillary bridge.

[0055] This technical solution solves the problem of applying an electric field to patterned capillary bridges by using external electrode plates and a power supply. Compared to methods that directly use induced templates and deposition substrates as electrodes, this approach offers greater flexibility and applicability. It does not require the induced template and deposition substrate to be conductive, thus expanding the range of materials that can be used. Furthermore, by adjusting the voltage of the external power supply and the position of the electrode plates, the electric field strength and distribution can be more precisely controlled, which is beneficial for improving the quality and precision of quantum dot patterns.

[0056] The duration of the electric field application (i.e., the duration of the electrodeposition process) can be set from 1 minute to 300 minutes, depending on factors such as the concentration of quantum dots and the strength of the electric field.

[0057] In some preferred embodiments, the surface of the quantum dots is modified with ligands; the ligands are PEG-COOH or PEG-NH2.

[0058] Ligand modification can improve the dispersibility and stability of quantum dots in solution. PEG-COOH or PEG-NH2 ligand modification can form a protective layer on the surface of quantum dots, preventing their aggregation. PEG segments have good hydrophilicity, which can enhance the dispersibility of quantum dots in aqueous solution. At the same time, COOH and NH2 groups can provide charge, further enhancing the stability of quantum dots.

[0059] PEG-COOH or PEG-NH2 ligand modification can be achieved in several ways. For example, ligand exchange can be used to replace the original ligand with PEG-COOH or PEG-NH2. Another method is to directly use PEG-COOH or PEG-NH2 as ligands during quantum dot synthesis. Furthermore, PEG-COOH or PEG-NH2 can be grafted onto the quantum dot surface through chemical reactions.

[0060] The concentration of the quantum dot solution can be configured according to actual needs, for example, from 20 mg / mL to 100 mg / mL. The proportion of ligands in the quantum dot solution can also be set according to actual needs, for example, from 20% to 40%.

[0061] The type of quantum dot can be selected according to actual needs, including one or more of CdSe / ZnS quantum dots, ZnSe / ZnS quantum dots, InP / ZnS quantum dots, carbon quantum dots, and perovskite quantum dots. These quantum dots have different band structures and luminescence properties, enabling the emission of light at different wavelengths, thus making them suitable for various display, lighting, and sensing applications.

[0062] The solvent for quantum dot solutions can be selected according to actual needs, such as water, organic solvents, or ionic liquids. Different solvent choices can adapt to the surface characteristics of different types of quantum dots, helping to form uniform quantum dot solutions and thus achieving high-quality quantum dot patterning.

[0063] By selecting appropriate combinations of quantum dots and solvents, uniform dispersion and stable existence of quantum dots in solution can be achieved. For example, when using water as a solvent, CdSe / ZnS quantum dots with hydrophilic ligands on their surface can be selected; when using organic solvents, InP / ZnS quantum dots with hydrophobic ligands on their surface can be selected. This matching ensures that the quantum dots do not aggregate or settle in the solution, thereby guaranteeing the uniform distribution of quantum dots during subsequent patterning.

[0064] Furthermore, when using ionic liquids as solvents, their excellent conductivity can promote the directional movement of quantum dots under the influence of an electric field, thereby improving the efficiency and precision of electrodeposition. Simultaneously, the low volatility of ionic liquids can extend the operating time window, which is beneficial for the formation of fine patterns.

[0065] The material of the inducing template can be set according to actual needs. For example, in some embodiments, the inducing template is a highly doped silicon pillar template. Highly doped silicon pillar templates offer several advantages as inducing templates. First, highly doped silicon has excellent conductivity and can be directly used as an electrode in the electrodeposition process, simplifying the experimental setup. Second, silicon is easy to microfabricate; the required patterned concave textures can be precisely fabricated using methods such as photolithography. Furthermore, the silicon surface can be chemically modified to adjust its wettability, which is beneficial for forming stable patterned capillary bridges. Finally, highly doped silicon pillar templates possess good mechanical strength and chemical stability, can be reused, and reduce costs.

[0066] The shape and size of the induction template can be set according to actual needs.

[0067] The material of the deposition substrate can be selected according to actual needs. For example, in some embodiments, the deposition substrate is an ITO substrate, a metal substrate, or a highly doped silicon substrate. ITO substrates, metal substrates, and highly doped silicon substrates all have good conductivity, which is crucial for the formation of the electric field and the directional deposition of quantum dots during the electrodeposition process. ITO substrates have transparency and conductivity, making them suitable for applications requiring optical transparency. Metal substrates have excellent conductivity and stability, making them suitable for various electrodeposition conditions. Highly doped silicon substrates combine semiconductor properties and conductivity, allowing for integration with other semiconductor devices.

[0068] The shape and size of the deposition substrate can be set according to actual needs.

[0069] In this embodiment, the following step is included before step A1: A0. Preparation of inducing template; Step A0 specifically includes: The induction template substrate is polished on one side, with the polished surface used as the feature surface; Patterned concave textures are etched onto the feature surface using photolithography. Positive photoresist is coated on the feature surface, exposing patterned grooves; The induction template substrate is placed in a vacuum dryer, and silane is added to the vacuum dryer. The vacuum dryer is then evacuated to vaporize the silane and allow it to adhere to the inner surface of the patterned grooves. After heating and curing the inducing template substrate, the positive photoresist on the feature surface is removed to obtain the inducing template.

[0070] Precise patterned grooves can be formed on an induced template substrate through single-sided polishing and photolithographic etching. Furthermore, silane treatment alters the wettability of the inner surface of the patterned grooves, making it lower than that of the feature facets. This difference in surface properties is crucial for achieving precise quantum dot positioning.

[0071] Specifically, the single-sided polishing step ensures the flatness of the feature surface, providing a good foundation for subsequent photolithography and surface treatment. The photolithography etching step then forms the desired patterned grooves on the feature surface; the shape and size of these grooves can be designed according to the final required quantum dot pattern.

[0072] The step of coating with a positive photoresist (such as RZJ-304 positive photoresist) and exposing the patterned grooves is to protect the feature surface in the subsequent silane treatment, modifying only the inner surface of the grooves. The precision of this step directly affects the surface property distribution of the final induced template.

[0073] Silane treatment is a key step in this method. By vaporizing silane in a vacuum environment and adhering it to the inner surface of the patterned grooves, the wettability of the inner surface of the grooves can be significantly reduced. This treatment ensures that silane molecules are uniformly coated on the inner surface of the grooves, forming a stable hydrophobic layer.

[0074] Heat curing further stabilizes the silane layer and improves its durability. The final step of removing the positive photoresist restores the original surface properties of the feature facets, thus forming an induced template with significant differences in wettability between the feature facets and the inner surface of the grooves.

[0075] The advantage of this preparation method lies in its ability to precisely control the surface property distribution of the induced template. By adjusting the type of silane and processing parameters, the wettability of the inner surface of the grooves can be flexibly controlled, thus adapting to different types of quantum dot solutions. Furthermore, this method exhibits good reproducibility and mass production potential, which is beneficial for improving the efficiency and consistency of quantum dot patterning preparation.

[0076] The step of etching patterned grooves on a feature surface using photolithography may include: coating a positive photoresist (such as SUN-1150P positive photoresist) on the feature surface, then etching the positive photoresist using a plasma etching method to form patterned grooves, exposing the feature surface at the patterned grooves, then using a light beam (such as an ultraviolet light beam) to etch the feature surface through the patterned grooves to form patterned grooves, and finally removing the positive photoresist.

[0077] The amount of silane added to the vacuum dryer and the placement time of the template substrate in the vacuum dryer (e.g., 25-35 minutes) can be adjusted according to actual needs. The temperature (e.g., 110℃-130℃) and treatment time (e.g., 2.5-3.5 hours) of the heat curing treatment can be adjusted according to actual needs.

[0078] Preferably, the selected silane is perfluorooctyltrichlorosilane, perfluorooctyltrimethoxysilane, octadecyltrimethoxysilane, or octadecyltrichlorosilane. These specific silanes can form a hydrophobic layer on the inner surface of the patterned grooves, effectively reducing its wettability. These silanes are chosen because they have long carbon chains and hydrophobic groups, enabling them to form stable self-assembled monolayers on the surface, thereby significantly altering the surface wettability.

[0079] Preferably, the step A1 is preceded by the following step: A01. The deposited substrate was ultrasonically cleaned in ethanol, acetone and isopropanol in sequence, dried with a nitrogen gun and cleaned with a plasma cleaner.

[0080] The above treatment ensures the cleanliness of the processed surface, thereby improving the quality of the quantum dot pattern.

[0081] Furthermore, step A3 may be followed by the following steps: A4. Rinse the deposited substrate with the same solvent as the quantum dot solution to remove residual quantum dot solution, and then dry it with nitrogen.

[0082] The above treatment ensures the cleanliness of the final product.

[0083] In one specific embodiment, the inducing template is N-type doped single-crystal silicon with a diameter of 4 inches and a thickness of 525 μm. The patterned grooves on its feature surface are... Figure 4The straight lines shown have a patterned groove depth of 20 μm. After photolithography, the inducing template is first placed in a vacuum dryer with 1 μL of fluorosilane added, evacuated for 30 minutes, and then heated in a 120°C oven for 3 hours. The deposition substrate is a 3cm x 3cm ITO substrate, which is ultrasonically cleaned in ethanol solution for 15 minutes before use, followed by ultrasonic cleaning with acetone and isopropanol for 15 minutes each. After cleaning, it is dried with nitrogen and treated with a plasma cleaner for 10 minutes. The quantum dot solution is a mixture of PGMEA solvent and CdSe / ZnS quantum dots. A solution with a concentration of 20 mg / mL was prepared, in which the ligand was PEG-COOH, and the ligand ratio (mass ratio) in the solution was 28%. The height of the gap between the feature facet and the processing facet was 1 μm. When applying an electric field, the inducing template and the deposition substrate were connected to the positive and negative terminals of a power supply, respectively. The current was set to 0.1 A, the deposition time to 300 s, and the clamping voltage to 5 V. After deposition, the deposition substrate was rinsed three times with PGMEA to remove residual quantum dot solution on the surface, and then dried with nitrogen gas to obtain an ITO substrate with a one-dimensional nanowire pattern of quantum dots on the surface, as shown below. Figure 5 As shown.

[0084] In another specific embodiment, the inducing template is N-type doped single-crystal silicon with a diameter of 4 inches and a thickness of 525 μm, and the patterned grooves on its feature surface are... Figure 6 The circular array shown has a patterned groove depth of 15 μm. After photolithography, the inducing template is first placed in a vacuum dryer with 1 μL of fluorosilane added, evacuated for 30 minutes, and then heated in a 120°C oven for 3 hours. The deposition substrate is a 3cm x 3cm highly doped silicon substrate, which is immersed in ethanol solution and ultrasonically cleaned for 15 minutes before use, followed by ultrasonic cleaning with acetone and isopropanol for 15 minutes each. After cleaning, it is dried with nitrogen and treated with a plasma cleaner for 10 minutes. The quantum dot solution is a mixture of water and CdSe / ZnS quantum dots. A solution with a concentration of 100 mg / mL was prepared, in which the ligand was PEG-NH2, and the ligand ratio (mass ratio) in the solution was 35%; the height of the gap between the feature facet and the processing facet was 1 μm; when an electric field was applied, the inducing template and the deposition substrate were connected to the positive and negative terminals of a power supply, respectively, with the current set to 0.01 A, the deposition time to 300 s, and the clamping voltage to 2 V; after deposition, the deposition substrate was rinsed three times with water to remove residual quantum dot solution on the surface, and then dried with nitrogen gas to obtain a highly doped silicon substrate with a quantum dot nanoring pattern on the surface, such as... Figure 7 As shown.

[0085] In this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, without necessarily requiring or implying any such actual relationship or order between these entities or operations.

[0086] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A method for patterning quantum dots based on micro-region induced electrodeposition, characterized in that, Including the following steps: A1. An induction template and a deposition substrate are placed opposite each other, with the feature surface of the induction template facing the processed surface of the deposition substrate, so as to form a gap between the feature surface and the processed surface; the feature surface is provided with patterned grooves, and the wettability of the inner surface of the patterned grooves is lower than that of the feature surface. A2. Injecting a quantum dot solution into the gap between the feature surface and the processing surface, thereby causing the quantum dot solution to flow along the patterned concave lines under the action of capillary force, forming a patterned capillary bridge with one side connected to the processing surface and the other side located in the patterned concave lines; A3. An electric field is applied to the patterned capillary bridge, causing the quantum dots in the patterned capillary bridge to be deposited on the processing surface under the action of the electric field force to form a quantum dot pattern.

2. The method for fabricating quantum dots based on micro-region induced electrodeposition according to claim 1, characterized in that, The height of the gap between the feature surface and the processing surface is 500nm-10μm.

3. The method for fabricating quantum dots based on micro-region induced electrodeposition according to claim 1, characterized in that, Both the induction template and the deposition substrate are conductive. In step A3, an electric field is applied to the patterned capillary bridge by connecting the induction template and the deposition substrate to the positive and negative terminals of a power source, respectively.

4. The method for fabricating quantum dots based on micro-region induced electrodeposition according to claim 1, characterized in that, In step A3, the induction template and the deposition substrate are placed between two electrode plates, and the two electrode plates are respectively connected to the positive and negative terminals of a power supply to apply an electric field to the patterned capillary bridge.

5. The method for fabricating quantum dots based on micro-region induced electrodeposition according to claim 1, characterized in that, The surface of the quantum dots is modified with ligands; the ligands are PEG-COOH or PEG-NH2.

6. The method for fabricating quantum dots based on micro-region induced electrodeposition according to claim 1, characterized in that, The quantum dots include one or more of CdSe / ZnS quantum dots, ZnSe / ZnS quantum dots, InP / ZnS quantum dots, carbon quantum dots, and perovskite quantum dots; the solvent for the quantum dot solution is water, an organic solvent, or an ionic liquid.

7. The method for fabricating quantum dots based on micro-region induced electrodeposition according to claim 1, characterized in that, The inducing template is a highly doped silicon pillar template.

8. The method for preparing quantum dots patterned based on micro-region induced electrodeposition according to claim 1, characterized in that, The deposition substrate is an ITO substrate, a metal substrate, or a highly doped silicon substrate.

9. The method for preparing quantum dots based on micro-region induced electrodeposition according to claim 1, characterized in that, Step A1 is preceded by the following steps: A0. Preparation of inducing template; Step A0 specifically includes: The induction template substrate is polished on one side, with the polished surface used as the feature surface; Patterned concave textures are etched onto the feature surface using photolithography. A positive photoresist is coated on the feature surface, exposing the patterned grooves; The inducing template substrate is placed in a vacuum dryer, and silane is added to the vacuum dryer. The vacuum dryer is then evacuated to vaporize the silane and allow it to adhere to the inner surface of the patterned grooves. After the inducing template substrate is heated and cured, the positive photoresist on the feature surface is removed to obtain the inducing template.

10. The method for fabricating quantum dots based on micro-region induced electrodeposition according to claim 9, characterized in that, The silane is perfluorooctyltrichlorosilane, perfluorooctyltrimethoxysilane, octadecyltrimethoxysilane, or octadecyltrichlorosilane.

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