Non-modulation type high-speed near-field infrared receiving circuit for electric energy meter and optimization method
By optimizing the infrared receiving circuit structure, calculating the communication rate influencing factor, and adding a clamping diode, the problem of low communication rate in infrared communication circuits in smart energy meters was solved, and high-speed communication was achieved.
CN122247521APending Publication Date: 2026-06-19QINGDAO DINGJUN ELECTRIC CO LTD +2
View PDF 0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- QINGDAO DINGJUN ELECTRIC CO LTD
- Filing Date
- 2025-08-05
- Publication Date
- 2026-06-19
AI Technical Summary
Technical Problem
Existing infrared communication circuits have low communication rates in smart meters, making it difficult to meet the demands of high-speed communication.
Method used
By calculating the time from the generation of the infrared signal to the base action of the amplifying transistor and the rise and fall times of the waveform at the hardware receiving end, the factors affecting the communication rate were determined, and a clamping diode was added to reduce the emitter voltage of the infrared receiver tube, thus optimizing the circuit structure.
Benefits of technology
This greatly reduces the operating time of the infrared receiver tube and improves the communication rate.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122247521A_ABST
Abstract
This invention discloses an unmodulated high-speed near-field infrared receiving circuit and optimization method for electricity meters, including: obtaining the time from infrared signal generation to the base action of the transistor, obtaining the rise and fall times of the waveform at the hardware receiving end, determining the communication rate influencing factor, and adding a clamping circuit. In this scheme, by calculating the time from infrared signal generation to the base action of the amplifying transistor and the rise and fall times of the waveform at the hardware receiving end, it is determined that the operation time of the infrared receiving transistor itself is the most influential factor on the communication rate. By adding a clamping diode, the voltage of the emitter stage when the infrared receiving transistor is turned on is changed from the original voltage divider on the grounding resistor R905 to the sum of the conduction voltage of the clamping diode VD901 and the collector and emitter voltages of the amplifying transistor VT902. This reduces the voltage at the point of conduction, decreases the charging and discharging time at that point, and thus greatly reduces the operation time of the infrared receiving transistor, thereby improving the communication rate.
Need to check novelty before this filing date? Find Prior Art