Back contact cell and preparation method and cell string thereof
By using a silicon dioxide insulating layer instead of insulating ink in the fine grid setting area of the back contact photovoltaic cell, the short circuit problem in the encapsulation process was solved, reducing costs and improving the yield and reliability of the cells.
CN122248845APending Publication Date: 2026-06-19DAS SOLAR CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- DAS SOLAR CO LTD
- Filing Date
- 2024-12-18
- Publication Date
- 2026-06-19
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Figure CN122248845A_ABST
Abstract
This invention discloses a back-contact solar cell, its fabrication method, and a battery string. The back-contact solar cell includes a silicon wafer substrate, which has a first surface and a second surface disposed opposite to each other. The first surface has multiple main gate regions and multiple fine gate regions, spaced apart along a first direction. The first surface also includes an insulating layer disposed on the fine gate regions, covering them along the thickness direction of the silicon wafer substrate. The insulating layer is made of silicon dioxide. Thus, by fabricating an insulating layer containing silicon dioxide on the fine gate regions, replacing the insulating ink used in the prior art, the back-contact solar cell packaging process can be reduced while ensuring good insulation performance of the insulating layer, thereby lowering packaging costs and complexity, and improving the yield and reliability of the packaged back-contact solar cell.
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