Capacitor device

Abstract

The technique described herein targets a modified capacitor (relative to a standard capacitor) in which a first conductor is coupled to a second conductor via a distributed conductive interconnect array through a dielectric layer separating the conductors. The interconnect array facilitates surface current flow between the first and second conductors and determines the capacitor's self-resonant frequency. This conductive interconnect array (or extended area), absent in standard capacitors, allows the capacitor to achieve a higher self-resonant frequency, for example, substantially stable capacitance in the high-frequency radio frequency range, including millimeter-wave frequencies. This further improves the quality factor. The improvements brought about by the technique described herein facilitate the achievement of more optimized surface current densities. Modified capacitors offer advantages in various circuits, such as impedance converters in antenna elements or millimeter-wave frequency phase shifters.

Description

Technical Field

[0001] This application claims priority to U.S. nonprovisional patent application No. 18 / 519,346, filed November 27, 2023, entitled “SELECTIVELY ENHANCING THERESONANCE FREQUENCY AND QUALITY FACTORY OF ON-CHIP CAPACITORS,” the entire contents of which are hereby incorporated by reference. Background Technology

[0002] Capacitors are fundamental circuit elements in many electronic and electrical applications, including automotive, consumer electronics, biomedicine, defense, satellite, and wireless communications. In high-frequency wireless communications, including 5G, 6G, and future technologies, features such as massive machine-type communication (mMTC) and ultra-reliable low-latency communication (URLLC) are highly sought after. Examples of machine-to-machine (M2M) use cases can include time-sensitive industrial IoT (IIoT) applications, autonomous vehicles, sophisticated drone systems, and asset tracking systems. These applications require improved passive components, particularly capacitors and inductors.

[0003] Currently, commercial high-frequency capacitors are used in frequency bands from 1 GHz to 4 GHz, covering cellular base stations, mobile phones, and 4G infrastructure. High-frequency capacitors are limited by their resonant frequency, which causes their efficiency to decrease above their self-resonant frequency. This is typically because the capacitance of a capacitor increases exponentially near its first self-resonant frequency (and behaves like an inductor above its self-resonant frequency). Another design consideration is the capacitor's quality factor (GF). (Factor), which typically represents the efficiency of a capacitor in terms of energy loss; that is, the efficiency of a capacitor. The factor is an indicator of the degree of losslessness of a capacitor. Generally, increasing the self-resonant frequency leads to... The factor increases accordingly, and vice versa. The factor is inversely proportional to the frequency, so it deteriorates at high frequencies, which, like the self-resonant frequency, limits the operating frequency of the capacitor. Attached Figure Description

[0004] The techniques described herein are illustrated by way of example and are not limited to the accompanying drawings, in which similar reference numerals indicate similar elements, and wherein:

[0005] Figure 1 The example capacitor is shown in top view, including a modified capacitor with a distributed array of conductive interconnects along the periphery of the device (compared to a conventional capacitor).

[0006] Figure 2 The various aspects and implementations disclosed in this subject are shown. Figure 1 A perspective representation of an example capacitor.

[0007] Figure 3 An exploded representation of a modified capacitor, implemented according to various aspects disclosed in this subject matter, is shown, having a distributed array of conductive interconnects along the periphery of the device.

[0008] Figure 4A It is a three-dimensional representation of a modified rectangular capacitor disclosed and implemented according to various aspects of this subject matter, which has a distributed conductive interconnect array along the periphery of the device.

[0009] Figure 4B This is based on the various aspects and implementations disclosed in this topic. Figure 4A The top-view model of the modified rectangular capacitor is shown, which has a distributed conductive interconnect array along the periphery of the device.

[0010] Figure 5A It is a top view representation of the modified capacitor disclosed and implemented according to the various aspects of this subject matter, which has a conductive interconnect array in a general ring shape along most of the device periphery.

[0011] Figure 5B It is a top view representation of a modified capacitor disclosed and implemented according to various aspects of this subject matter, which has an array of conductive interconnects along more than half of the device periphery.

[0012] Figure 6A It is a top view representation of a modified capacitor disclosed and implemented according to various aspects of this subject matter, which has an array of conductive interconnects along less than half of the device periphery.

[0013] Figure 6B It is a top view representation of a capacitor disclosed and implemented according to various aspects of this subject matter, having conductive interconnections opposite the radio frequency port.

[0014] Figure 7 It is a top view representation of the modified capacitor disclosed and implemented according to the various aspects of this subject matter, which has a single conductive interconnect extending through approximately half of the device perimeter.

[0015] Figure 8 These are example diagrams of capacitance and frequency of example capacitor devices with different characteristics, implemented according to various aspects disclosed in this subject matter.

[0016] Figure 9 It is based on the various aspects disclosed in this topic and the implementation thereof. Figure 8 The quality factor of the example capacitor device corresponding to the example capacitor device ( Example graph of values ​​versus frequency.

[0017] Figure 10 This is an example diagram showing the capacitance and frequency of a modified capacitor device based on various aspects and implementation examples disclosed in this topic.

[0018] Figure 11 It is based on the various aspects disclosed in this topic and the implementation such as Figure 5A , Figure 5B , Figure 6A and Figure 6B The quality factor typically represented in the text refers to the modified capacitor equipment. Example graph of values ​​versus frequency. Detailed Implementation

[0019] The various aspects of the techniques described in this article generally pertain to metal-insulator-metal (MIM) capacitors, which improve self-resonant frequency and While maintaining a constant capacitance value, including at ultra-high frequencies, MIM capacitors typically offer high capacitance in a compact footprint and can be seamlessly integrated into printed circuits or on-chips using a double-layer metal structure.

[0020] As will be understood, the techniques described in this paper are based on straightforward design changes, rather than proposing a new / complex method for manufacturing on-chip MIM capacitors. To this end, this paper describes a capacitor design that not only enables planar capacitors… The factors are further optimized while maintaining their values, and the resonant frequency of the capacitor is also increased. Typically, interconnect arrays (e.g., vias) facilitate the flow of surface current between the capacitor conductors, thereby determining the capacitor's self-resonant frequency and... Factors. By carefully or selectively arranging the interconnects, the self-resonant frequency of the capacitor can be adjusted for a given application. Further optimization of factors. As will be understood, in one or more implementations, capacitor design has evolved to bypass the need for complex manufacturing changes and thus transform advanced 5G, millimeter wave, 6G radio and beyond, as well as the upcoming wave of consumer electronics, including but not limited to consumer devices such as laptops and IoT devices.

[0021] It should be understood that any examples herein are not intended to be limiting. Therefore, none of the embodiments, aspects, concepts, structures, functionalities, or examples described herein constitute a limitation, and the technology can be used in a variety of ways, generally providing numerous benefits and advantages in communication and computing. It should also be noted that terms used herein (such as “optimization” or “optimal”) refer only to a goal of moving towards a better state, not necessarily to achieving an ideal result.

[0022] In this specification, references to "an embodiment," "an embodiment," "an implementation," or "implementation" mean that a particular feature, structure, or characteristic of that embodiment / implementation can be included in at least one embodiment / implementation. Therefore, phrases such as "in one embodiment" or "in an implementation" appearing throughout this specification do not necessarily all refer to the same embodiment / implementation. Furthermore, these particular features, structures, or characteristics can be combined in any suitable manner in one or more embodiments / implementations.

[0023] The various aspects of this subject matter disclosure will be described in more detail below with reference to the accompanying drawings, which illustrate example components, diagrams, and / or operations. For ease of explanation, numerous specific details are set forth in the following description to provide a thorough understanding of various embodiments. However, this subject matter disclosure may be embodied in many different forms and should not be construed as limited to the examples set forth herein.

[0024] The following detailed description is merely illustrative and is not intended to limit the embodiments and / or their application or use. Furthermore, it is not intended to be construed as being bound by any express or implied information presented in the foregoing or detailed description sections.

[0025] One or more embodiments will now be described with reference to the accompanying drawings, wherein similar reference numerals are used throughout to refer to similar elements. For ease of explanation, numerous specific details are set forth in the following description to provide a more thorough understanding of one or more embodiments. However, it will be apparent, in various circumstances, that one or more embodiments may be practiced without these specific details.

[0026] Furthermore, it should be understood that this disclosure will be described with a given illustrative framework; however, other frameworks, structures, substrate materials and process features, and steps may be varied within the scope of this disclosure.

[0027] It should also be understood that when an element (such as a layer, region, or substrate) is mentioned as being "above" or "over" another element, it can be directly on top of that other element, or intermediate elements may be present. Conversely, intermediate elements are not present only when an element is described as being "directly above" or "directly over" another element. Note that orientation is generally relative; for example, "above" or "over" can be flipped, and if flipped, it can be considered unchanged even if it technically appears to be below or under when presented in the flipped orientation. It should also be understood that when an element is mentioned as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or intermediate elements may be present. Conversely, intermediate elements are not present only when an element is described as being "directly connected" or "directly coupled" to another element.

[0028] The use of "one embodiment" or "embodiment" and variations thereof in the specification means that a particular feature, structure, characteristic, etc., described with respect to that embodiment is included in at least one embodiment of the principle. Therefore, the phrases "in one embodiment" or "in an embodiment" appearing throughout the specification, and any other variations, do not necessarily refer to the same embodiment. For the sake of brevity, repeated descriptions of similar elements used in the corresponding embodiments have been omitted.

[0029] Capacitors are typically electronic circuit elements that store electrical charge. A capacitor is essentially a pair of conductive metal plates separated by an insulator (dielectric). Capacitance (or the amount of charge a capacitor stores per unit applied voltage) depends on parameters including the area of ​​the plates, the spacing between the plates, and the dielectric constant of the insulating layer between the plates. Capacitors are widely used in a wide variety of devices, such as filters, analog-to-digital converters, memory devices, control applications, high-frequency electronics, and many other types of electronic circuits. Radio frequency (RF) circuits have associated capacitive elements because at high frequencies, the capacitive and inductive effects become more pronounced compared to DC or low frequencies.

[0030] A common type of capacitor is the metal-insulator-metal (MIM) capacitor, which is frequently used in circuits that require high capacitance within a small area. MIM capacitors are developed using two layers of printed circuit boards (PCBs) or similar materials stacked together, utilizing an intermediate dielectric layer as the dielectric insulator.

[0031] In electronic circuits, reactance refers to the opposition of inductance or capacitance to alternating current. Reactance is similar to resistance, but the difference is that reactance does not cause electrical energy to dissipate as heat; instead, it stores energy, which is then returned to the circuit after a quarter cycle. As frequency increases, inductive reactance increases, while capacitive reactance decreases.

[0032] For high-frequency circuits such as 5G, millimeter-wave (mmWave), or sub-THz (frequency between 90 and 300 GHz, typically above 100 GHz), capacitive reactance and its relationship with increasing frequency are important factors to consider. Capacitive reactance is measured in ohms (Ω). It is given by the following formula: in It is frequency, and the unit is Hertz (Hz); and It's capacitance, measured in farads (F). The impedance of a capacitor is determined by... Provided.

[0033] exist At a constant frequency, the reactance of a capacitor is infinite, equivalent to an open circuit, thus preventing any current from flowing through the dielectric. As the frequency increases, the reactance decreases, allowing more current to pass through. When... f As the capacitance approaches infinity, the reactance of the capacitor approaches zero, which is equivalent to a short circuit.

[0034] Inductive reactance is a property of inductors in which a current generates a magnetic field around the inductor. In the context of an alternating current circuit, this magnetic field is constantly changing due to the oscillating current. This change in the magnetic field induces another current in the same conductor, flowing in the opposite direction to the original current that generated the magnetic field. Therefore, inductive reactance opposes changes in current within the component.

[0035] Infected X L With sinusoidal signal frequency f and inductor L Proportional L It depends on the physical shape of the inductor and is given by the following formula:

[0036] Quality factor (or simply) Factors or () is a parameter describing the resonant behavior of an underdamped resonator or resonator. It has higher... A sinusoidal driver resonator with a higher frequency factor exhibits a larger amplitude at its resonant frequency, but a narrower frequency range near that frequency; the frequency range at which the oscillator resonates is called its bandwidth. Therefore, the high-frequency response in a radio receiver... Tuning circuits are more difficult to tune, but they offer greater selectivity, allowing them to better filter out signals from neighboring stations on the spectrum. The oscillator has a narrower frequency range and is more stable.

[0037] In practical circuits, resistance is unavoidable. Except for superconductors whose resistance approaches zero at low temperatures (approaching zero means very small, but not completely zero), all conductors at room temperature (such as aluminum, copper, gold, platinum, tungsten, etc.) have finite conductivity. When capacitors or inductors are implemented in a circuit, they all have a very small internal effective resistance R. Capacitors at their operating frequency... f Below The factor is defined as the ratio of the capacitor's reactance to its series resistance.

[0038] The quality factor of a capacitor represents the efficiency of a given capacitor in terms of energy loss; in short, the quality factor of a capacitor... It is an indicator of the degree of damagelessness of a capacitor, and is given by the following formula: in f It is frequency (Hz). C It is capacitance (unit: farad). X C It is the reactance of the capacitor (unit: ohms), and R C It is the equivalent series resistance (ESR) of a capacitor, measured in ohms. As the frequency increases, The factor will decrease (performance will deteriorate). For example, in an ideal scenario, a 1 picofarad (pF) capacitor with a resistance of 0.1 ohms at a frequency of 10 GHz... The value is 159; however, in reality, factors such as capacitor design, manufacturing technology, material purity, and contamination can significantly reduce its value. Factors.

[0039] In alternating current systems, The factor represents the ratio of the energy stored in a capacitor to the energy dissipated as heat loss in its equivalent series resistance. For example, if a capacitor can store 2000 joules of energy and only wastes 1 joule, then its... The factor is 2000. Because... It is an indicator of efficiency, therefore the ideal capacitor... The value is infinite, which means there is absolutely no energy loss during the energy storage process. This is derived from the fact that the equivalent series resistance of an ideal capacitor is zero.

[0040] The factor is not a constant value, but changes significantly with frequency. One reason is that there is an obvious [variable] in the above formula. Another reason is that the equivalent series resistance is not a constant value with respect to frequency. Due to the well-known skin effect (where current tends to flow at the outer edge of the conductor) and other effects related to dielectric properties, the equivalent series resistance varies with frequency.

[0041] Low-frequency applications do not need to consider Factors, and standard capacitors can be used in those applications. However, The skin factor is an important capacitor characteristic in RF circuit design. At RF frequencies, due to the skin effect, the equivalent series resistance increases with frequency. This increase in equivalent series resistance also leads to increased dissipation losses. Therefore, RF circuits typically use high-resistance capacitors. Capacitors are used to reduce high-frequency losses. This is especially important when designing circuits for 5G and millimeter-wave applications. Factor considerations become even more important.

[0042] Furthermore, the self-resonance of a capacitor imposes a frequency limitation, under which the capacitor behaves as a true capacitive reactance to the circuit. Beyond the resonant point, the impedance rotates, and the capacitor begins to behave as an inductive element. It's important to note that a real capacitor is actually a series RLC (resistor-inductor-capacitor) circuit, and the resonant frequency can be estimated if the leakage resistance, equivalent series resistance, and equivalent series inductance (ESL) are known. As the frequency increases, capacitors and inductors have multiple self-resonant frequencies, depending on their construction, type, value, and integration method. Therefore, SRF is an important parameter to consider when designing capacitors for 5G / millimeter-wave applications, and developing circuits for 6G and Asia-Pacific Hertz applications becomes increasingly difficult due to the self-resonant frequencies of components.

[0043] Typically, when the self-resonant frequency is plotted against the capacitance value, the capacitor's self-resonant frequency appears as a downward-sloping straight line on a double logarithmic coordinate system. As a result, for example, to develop a 5G FR1 radio operating at 6 GHz, the capacitor needs to be designed with a self-resonant frequency (SRF) much higher than 6 GHz, because the capacitor value increases exponentially as it approaches its first SRF.

[0044] like Figure 1 (Top view) and Figure 2 As shown in the upper half of the perspective view, a conventional metal-insulator-metal capacitor 100 consists of two overlapping conductors 102 and 104 sandwiched by a dielectric 106 (also called an insulating dielectric). Various parameters determine the capacitance value, including the dielectric thickness, dielectric constant or permittivity, and the overlapping area of ​​the metal conductors.

[0045] A single metal interconnect 108 facilitates the flow of a small current between conductors 102 and 104. It should be noted that the RF ports (collectively referred to as 110) include an RF signal port 112 and (multiple) RF ground ports 114(1) and 114(2). For measurement and device integration, a coplanar waveguide (CPW) port design is utilized, in which the RF signal port and the RF ground port are on the same plane. This coplanar waveguide implementation is independent of material thickness, which is standard in microstrip implementations.

[0046] The substrate 116 is located below other components. It should be noted that while the self-resonant frequency of capacitors can be improved by using vertically stacked capacitors (which is not possible in various PCB or microfabrication processes), and radio frequency can be improved by removing the substrate below the device, doing so usually makes the device unreliable.

[0047] The technology described in this article (in) Figure 1 The lower half (represented) is based on a design modification that produces a metal-insulator-metal capacitor 120 with a self-resonant frequency and The factor (relative to the conventional metal-insulator-metal capacitor 100) is significantly improved, with modifications including: distributing interconnects 128 around the periphery of the desired overlap region between the two overlapping conductors 122 and 124 and the dielectric 126. Figure 2 (Perspective view) and Figure 3 This is also shown in the lower half of the (exploded view). Figure 3 A through-hole 132 passing through dielectric 126 is also shown. Figure 1 and Figure 2 In the lower half, similar RF ports (collectively referred to as 130) include RF signal port 132 and (multiple) RF ground ports 134(1) and 134(2), and substrate 136 is also located below the other components. It should be noted that, in general, this capacitor design is independent of dielectric thickness, dielectric constant, and / or overlap area.

[0048] Generally speaking, the technique described in this article can simultaneously improve the performance of planar capacitors. Factors and self-resonant frequencies (SRF) enhance the flexibility of RF component optimization. In one or more implementations, this technique enables straightforward layout-level modifications without requiring, for example, large-scale changes to manufacturing processes or the introduction of new materials. By selectively altering the interconnects around the device perimeter (e.g., by adjusting the desired number / placement of these interconnects), the total interconnect area facilitates the flow of surface current between the first and second conductors, thereby providing... Significant improvements in factor and self-resonant frequency. The design principles of the techniques described in this paper are applicable to almost all MIM capacitors, regardless of their geometry, and can be seamlessly transitioned to multilayer structures.

[0049] As will be understood, miniaturized, high-performance monolithic metal-insulator-metal (MIM) capacitors can be developed through straightforward design modifications at the circuit design level, independent of changes in material stacking or heterogeneous integration using supplier components. By making such design modifications during the circuit design process, the self-resonant frequency can be pushed far beyond the target operating frequency band without depending on material selection, while simultaneously improving… Factors. Therefore, the technology described in this paper is based on (multiple) design modifications and can be significantly implemented without any modifications in the manufacturing or production process.

[0050] More specifically, one or more implementations of the techniques described herein are based on straightforward design modifications, including, for example... Figures 1-3 As shown, a portion of the RF ground plane is covered using the top conductor electrode 122. It is important to note that this differs from conventional or standard MIM capacitors, which typically... Figure 1 and Figure 2 The top portion, as typically indicated, is designed by overlapping the top conductor electrode on top of the desired capacitance region.

[0051] As described in this article and as in Figure 3 As further highlighted herein, another straightforward design modification is to distribute vias 132 along the periphery of the RF ground plane between the top conductor layer 122 and the bottom conductor layer 124. As illustrated herein, this contrasts with using only a single interconnect 108 ( Figure 1 The upper part) forms a contrast with the traditional or standard MIM capacitor.

[0052] As can be readily understood, these design modifications can be applied to MIM capacitors of any arbitrary shape, not only circular overlapping regions but also other shapes (e.g., rectangles). For example, Figure 4A and Figure 4B The diagram shows a perspective and top view representation of an example rectangular MIM capacitor 440, which has any number of interconnects 432. Figure 4BAs shown, in one implementation, the overlapping region can be 100µm x 100µm, for example, such as with 60nm interconnect rings and a dielectric. Material parameters may include 3µm gold (Au) for the top and bottom conductors and silicon nitride (SiNx) for the dielectric. Furthermore, the techniques described herein can be used in standard double-layer MIM capacitors comprising two metal conductor electrodes, as well as multilayer MIM capacitors that may comprise multiple metal conductor layers (e.g., a third conductor and a second insulating layer) to reduce the overall device area.

[0053] Figure 5A yes Figure 3 A simplified top view of the capacitor 120 shown. Figure 5B This is a similar view to the 520 capacitor design; please note that, with... Figure 5A In comparison, the number of interconnects is reduced, thereby reducing the total area used to facilitate current flow between conductors (approximately 75%). This is highlighted in regions 533a and 533b, which have no interconnects.

[0054] Figure 6A Another different capacitor design 620 has a smaller total interconnect area (approximately 40%) for the interconnects 632a used to facilitate current flow between conductors. This is further emphasized by the larger, uninterconnected areas 633a and 633b. Figure 6D shows a design for capacitor 621 with only two interconnects 632b and larger uninterconnected areas 633c and 633d; it can be understood that the design in Figure 6D is close to... Figure 1 and Figure 2 The upper part shows a traditional design, and as expected, as referenced. Figure 10 and Figure 11 As described, its SRF / The factor increase was small.

[0055] It should be noted that while distributed interconnect arrays are an easy way to achieve ideal SRF / The factor property has a straightforward design, but other designs can also provide desirable results. For example, Figure 7 A single interconnect 732 is shown, which covers a large area relative to the current flow between conductors; it can be understood that this area (of the single interconnect 732) can be enlarged while shrinking the non-interconnect regions 733a and 733b; or the interconnect region can be reduced while enlarging the non-interconnect regions 733a and 733b.

[0056] Furthermore, the location of one or more interconnects can be moved, but generally, centering the interconnects opposite the RF port (at a 180-degree angle) provides the desired effect. Additionally, interconnects do not need to be symmetrically distributed, and / or gaps can exist between interconnects instead of making them uniformly distributed.

[0057] In summary, such as Figure 5A , Figure 5B and Figure 6A As shown, the straightforward design change of the percentage of interconnects connecting the two metal planes varies, with each design starting the connection from opposite sides (180 degrees) of the RF ports. Figure 5A In the design, interconnects cover the area around the top metal plane and provide maximum SRF and Factor increase; while Figure 5B and Figure 6A The designs achieved partial coverage (approximately 75% and 40% respectively) and demonstrated the impact of this simple design change. Figure 6B The design is close to the typical traditional MIM capacitor design described in this article.

[0058] Figures 8-11 The results obtained through electromagnetic simulation are shown. Figure 8 The graph shows the change in capacitance as frequency increases, while Figure 9 The graph shows The change of the factor (normalized to 1) with increasing frequency. Figure 8 and Figure 9 In the diagram, the solid lines 880 and 990 represent changes in capacitance via analog capacitors (by altering the overlapping area of ​​the capacitors), rather than as... Figure 5A That would use an increased interconnect area. Figure 8 and Figure 9 The dashed lines 882 and 992 in the diagram represent changing the capacitance by altering the overlapping area of ​​the capacitors, rather than as... Figure 5B That would use an increased interconnect area. Figure 8 and Figure 9 The dashed lines 884 and 994 indicate that the capacitance is changed by altering the overlapping area of ​​the capacitors, rather than as shown in the diagram. Figure 6A That would use an increased interconnect area. Figure 8 and Figure 9 The dashed lines 886 and 996 in the text are respectively as follows: Figure 1 and Figure 2 The conventional capacitor shown at the top.

[0059] from Figure 8 and Figure 9 As can be seen, it changes the capacitance value by altering the physical overlap area. The electromagnetic simulation response of four traditional capacitors is shown, highlighting the effect and correlation of resonant frequency variation on SRF and... Some changes in the factors. Figure 9 It shows The factor indicates the rate at which the self-resonant frequency drops to zero (0), and the change in capacitor value with frequency ( Figure 8 This is in line with expectations. Because high-value capacitors have low SRF (Surface Reflection Frequency), the area of ​​interest (ROI) or usability of such capacitors is significantly limited.

[0060] In contrast, the technique described in this article allows for control of SRF without altering capacitor size, manufacturing process, and / or materials. Factors. As described herein, this technique can be used with MIM capacitors of any arbitrary shape and is not limited to circular / semi-circular overlapping areas. This technique can be used with standard double-layer MIM capacitors including M1 and M2, or with multilayer MIM capacitors that potentially include multiple metal conductor layers to reduce the overall area of ​​the device.

[0061] Figure 10 and Figure 11 It shows Figure 5A , Figure 5B , Figure 6A and Figure 6B Electromagnetic simulation response of capacitors with different design variants and their corresponding frequency relationships The relationship between factors and frequencies. Figure 10 and Figure 11 In the middle, the solid lines 1080 and 1090 represent respectively Figure 5A The design with the largest coverage of the interconnect area. Figure 8 and Figure 9 The dashed lines 1082 and 1092 in the text represent respectively Figure 5B The design covers approximately 75% of the interconnect area. Figure 8 and Figure 9 The dotted lines 1084 and 1094 in the text represent respectively Figure 6A The design has an interconnection area coverage of approximately 40%. Figure 8 and Figure 9 The dotted lines 1086 and 1096 in the diagram represent respectively... Figure 6B The design.

[0062] Figure 10 and Figure 11 The graphs clearly show that, for a specific capacitor value, changing the design parameters enhances the SRF at high frequencies and Factors without affecting the capacitor value. It can be seen that MIM capacitors can be further optimized by carefully or selectively arranging the interconnects, or by obtaining the desired SRF of the capacitor based on a given application. Relative to Figure 8 and Figure 9 , Figure 10 SRF and Figure 11 normalization The factors show that both parameters are improved by more than double, and there is no significant effect on the capacitor value, even when included in the extended region of interest corresponding to frequencies exceeding 20 GHz (i.e., up to approximately 25 GHz). Precisely controlled SRF can be achieved using the techniques described herein by fine-tuning the number of interconnects or the percentage of electrical interconnect walls between two metal plates. Factors.

[0063] Some non-limiting examples of applications of capacitors based on the technologies described herein include impedance matching networks (IMNs), or simply impedance tuners, required by user equipment (UEs) and base stations. Impedance matching networks utilizing various technologies are integrated into a wide range of commercial wireless communication devices. Impedance matching networks compensate for antenna impedance variations within the RF front end caused by operating band switching, such as when a UE moves between different cellular bands, switches from a 4G LTE network to a 5G network, or switches between cellular and Wi-Fi nodes. Impedance matching networks can also dynamically adapt to changes in output RF power levels, temperature, UE orientation, and process variations, as these networks ensure maximum system efficiency and optimal power delivery.

[0064] Typically, impedance matching networks are implemented by integrating switches with various fixed MIM capacitors, or through some form of variable capacitor. This paper describes high-capacity stable MIM capacitors (including those with high SRF and high...) The capacitor with a factor provides a wide tuning range, so that a single impedance matching network outperforms multiple integrated impedance matching networks for different tuning ranges.

[0065] Therefore, impedance matching networks are required in various radio frequency (RF) equipment; the basic component of an impedance matching network is a capacitor. The high-performance MIM capacitor described in this paper facilitates the development of impedance matching networks, which can be used not only in 5G or millimeter-wave radio equipment but also in various consumer electronics products such as laptops, tablets, and other UE devices.

[0066] The high SRF and high SRF described in this article Another example of the use of factor capacitors is in reflective phase shifters for beamforming. Phase shifters play a crucial role in providing wide RF phase tuning range and low transmission loss in modern phased array systems. Phased arrays are used for beamforming, which is essential in 5G and millimeter-wave communications because it enables directional transmission or reception of signals.

[0067] Antennas are fixed components on printed circuit boards or other substrates. Their radiation pattern can be tuned by providing an electronic phase shift in front of the antenna element. There are many methods to provide phase shift, among which the Reflective Phase Shifter (RTPS) is an effective method. For monolithically integrated phased array systems used for beamforming, RTPS can provide high phase shift resolution due to their small size and simple circuit topology. The most common design for RTPS utilizes a hybrid coupler with two LC (inductor-capacitor) reflective loads. The operating frequency band of the hybrid coupler is fixed, but the phase tuning range depends on the capacitive tuning capability achievable from the reflective loads. Small phase shifts can be achieved with a large capacitance range, but this range can only be extended by adding a large number of LC sections; however, the phase shift range eventually saturates. A better method to improve the phase shift range is to use high-value capacitors with a large SRF, as described in this paper. Because a larger capacitance range reduces the number of sections, this maintains a smaller circuit size and allows for faster tuning, as a larger number of components also requires a larger number of switching elements. Furthermore, a single component provides higher reliability.

[0068] Capacitors with a surface reactance (SRF) below the target frequency band should not be used, as capacitive reactance will behave like inductive reactance, thus compromising the entire circuit design and potentially damaging antenna components. MIM capacitors with high capacitance and an SRF exceeding the operating frequency band allow for the development of phase shifters with a large tuning range within a small area. Such phase shifters can be used in 5G infrastructure, including but not limited to UEs, radio units, 5G smart beamforming, and millimeter-wave consumer devices such as laptops.

[0069] One or more aspects may be embodied in a capacitor device, as described and illustrated in the accompanying drawings. The capacitor device may include a first conductor, a second conductor, and a dielectric layer between the first and second conductors. This dielectric layer may be coupled to a physical interconnect overlap region to facilitate surface current flow between the first and second conductors, wherein the physical interconnect overlap region is configured to determine the resonant frequency of the capacitor device.

[0070] The physical interconnect overlap area can be located near the periphery of the RF ground plane of the capacitor device.

[0071] The physical interconnect overlap region may include a single elongated via located near the periphery of the first conductor, wherein the single elongated via defines the overall size of the physical interconnect overlap region.

[0072] The physical interconnect overlap area can be substantially centered and substantially opposite to the signal port of the capacitor device.

[0073] The physical interconnect overlap region may include a set of corresponding conductive interconnects as corresponding vias, which define the overall size of the physical interconnect overlap region. The corresponding conductive interconnects may be distributed in a circular or substantially circular pattern. The corresponding conductive interconnects may be distributed close to the periphery of the first conductor. The corresponding conductive interconnects may be distributed close to less than half of the periphery of the first conductor. The corresponding conductive interconnects may be distributed close to more than half of the periphery of the first conductor.

[0074] One or more aspects may be embodied in a device such as those illustrated herein. The device may include a first conductor electrode and a second conductor electrode separated by a dielectric medium, thereby operating as a metal-insulator-metal capacitor having an RF ground plane. The device may also include a physical interconnect overlap region aligned with the periphery of the RF ground plane to facilitate surface current flow between the first and second conductors, thereby reducing the surface current density of the metal-insulator-metal capacitor, wherein the resonant frequency of the capacitor device is based on the size of the physical interconnect overlap region.

[0075] The first conductor electrode can extend to cover the radio frequency ground plane.

[0076] The physical interconnect overlap region may include a geometrically distributed interconnect array that enables vias from a first conductor electrode to a second conductor electrode through a dielectric.

[0077] The dielectric can be a first dielectric, and the device can also include a third conductor electrode separated from the second conductor electrode by a second dielectric.

[0078] This metal-insulator-metal capacitor can operate with a substantially stable capacitance in a frequency range of about 1 GHz to about 20 GHz.

[0079] One or more aspects may be embodied in a capacitor such as those described and represented herein. The device may include a first conductor overlapping a dielectric layer, the dielectric layer overlapping a second conductor, the first conductor being electrically coupled to the second conductor via an interconnect array passing through the dielectric layer; the interconnect array facilitates surface current flow between the first and second conductors and determines the self-resonant frequency of the capacitor. The second conductor may be coupled to a substrate.

[0080] The first conductor may extend over at least a portion of the radio frequency ground plane associated with the capacitor.

[0081] Interconnect arrays can include geometrically distributed arrays.

[0082] The interconnect array can be positioned close to the periphery of the first conductor.

[0083] This capacitor can be used as a tuning element, as part of an impedance matching network.

[0084] The capacitor can be part of a millimeter-wave frequency phase shifter used as an antenna element.

[0085] Therefore, a method is provided for use in high-frequency (e.g., radio frequency) applications with a high self-resonant frequency and Factor-based capacitor technology. Advantages compared to other known solutions include more stable capacitance at higher frequencies (e.g., millimeter waves). Furthermore, this technology can be implemented with straightforward design modifications (e.g., design adjustments at the device layout level), improving the SRF and SFR of planar capacitors without changing the capacitor value. In other words, the technique described in this paper can ideally enhance the self-resonant frequency and [the factor] of a planar capacitor without affecting the inherent value of each capacitor. Factors.

[0086] The technology described in this article can be seamlessly integrated during the layout phase without requiring manufacturing modifications. This allows industries to develop and manufacture miniaturized, high-performance monolithic MIM capacitors with high capacitance values, unaffected by variations in material stacking or any heterogeneous integration using supplier components. Without affecting the capacitance value, [the technology enables]... Coordinated control of factor and SRF variations provides flexibility in tuned RF components, thereby extending the usable range of the components to higher frequencies without adding any additional materials, making them suitable for the millimeter-wave spectrum.

[0087] The above description includes only examples. Of course, it is impossible to describe all possible combinations of components, materials, etc., in order to describe this disclosure, but those skilled in the art will recognize that many other combinations and arrangements exist. Furthermore, the terms "comprising," "having," and "having" used in the detailed description, claims, appendices, and drawings have similar meanings to "comprising" as a transitional term in the claims, and are intended to cover all situations.

[0088] The descriptions of various embodiments are for illustrative purposes only and are not intended to be exhaustive or limited to the disclosed embodiments. Many modifications and variations can be made to the embodiments by those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein has been chosen to best explain the principles of the embodiments, their practical application relative to existing technology in the market, or technical improvements, or to enable those skilled in the art to understand the embodiments disclosed herein.

Claims

1. A capacitor device, comprising: First conductor; Second conductor; as well as A dielectric layer, located between the first conductor and the second conductor, is coupled to a physical interconnect overlap region to facilitate surface current flow between the first conductor and the second conductor, wherein the physical interconnect overlap region is configured to determine the resonant frequency of the capacitor device.

2. The capacitor device of claim 1, wherein the physical interconnect overlap region is located near the periphery of the radio frequency ground plane of the capacitor device.

3. The capacitor device of claim 1, wherein the physical interconnect overlap region includes a single elongated via near the periphery of the first conductor, and wherein the single elongated via defines the overall size of the physical interconnect overlap region.

4. The capacitor device of claim 1, wherein the physical interconnection overlap region is substantially centered and substantially opposite to the signal port of the capacitor device.

5. The capacitor device of claim 1, wherein the physical interconnect overlap region includes a set of corresponding conductive interconnects as corresponding vias, the set of corresponding conductive interconnects defining the overall size of the physical interconnect overlap region.

6. The capacitor device of claim 5, wherein the respective conductive interconnects are distributed in a circular or substantially circular pattern.

7. The capacitor device of claim 5, wherein the respective conductive interconnects are distributed close to the periphery of the first conductor.

8. The capacitor device of claim 5, wherein the respective conductive interconnects are distributed near the periphery of a portion less than half the length of the first conductor.

9. The capacitor device of claim 5, wherein the respective conductive interconnects are distributed around the periphery of more than half of the first conductor.

10. An apparatus comprising: The first conductor electrode is separated from the second conductor electrode by a dielectric to operate as a metal-insulator-metal capacitor with a radio frequency ground plane; as well as The physical interconnect overlap region is aligned with the periphery of the radio frequency ground plane to facilitate the flow of electrical surface current between the first conductor and the second conductor, thereby reducing the surface current density of the metal-insulator-metal capacitor, wherein the resonant frequency of the capacitor device is based on the size of the physical interconnect overlap region.

11. The device of claim 10, wherein the first conductor electrode extends to cover the radio frequency ground plane.

12. The device of claim 10, wherein the physical interconnect overlap region comprises a geometrically distributed interconnect array that implements vias through the dielectric from the first conductor electrode to the second conductor electrode.

13. The device of claim 10, wherein the dielectric is a first dielectric, and further comprises a third conductor electrode separated from the second conductor electrode by a second dielectric.

14. The device of claim 10, wherein the metal-insulator-metal capacitor operates with substantially stable capacitance in a frequency range of about 1 GHz to about 20 GHz.

15. A capacitor, comprising: The first conductor overlaps with the dielectric layer; The dielectric layer overlapping the second conductor, wherein the first conductor is electrically coupled to the second conductor via an interconnect array passing through the dielectric layer, wherein the interconnect array facilitates surface current flow between the first and second conductors and determines the self-resonant frequency of the capacitor; and The second conductor is coupled to the substrate.

16. The capacitor of claim 15, wherein the first conductor extends over at least a portion of a radio frequency ground plane associated with the capacitor.

17. The capacitor of claim 15, wherein the interconnect array is a geometrically distributed array.

18. The capacitor of claim 15, wherein the interconnect array is positioned close to the periphery of the first conductor.

19. The capacitor of claim 15, wherein the capacitor can be used as a tuning element as part of an impedance matching network.

20. The capacitor of claim 15, wherein the capacitor is part of a millimeter-wave frequency phase shifter for an antenna element.

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