A high voltage ideal diode controller circuit

CN122268334APending Publication Date: 2026-06-2358TH RES INST OF CETC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
58TH RES INST OF CETC
Filing Date
2026-03-23
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

In existing airborne and missile-borne power systems, Schottky diode solutions suffer from problems such as high conduction losses, severe heat generation, inability to monitor voltage status in real time, and slow response speed, making it difficult to meet the requirements of high-reliability power systems for low power consumption, fast shutdown, and miniaturization.

Method used

Employing a high-voltage ideal diode controller circuit, it integrates components such as a controller chip, charge pump, gate comparator, fast pull-down comparator, and clamping diode. It monitors the input-output voltage difference in real time, dynamically adjusts the conduction state of the NMOS transistor, and quickly turns off the external NMOS transistor, providing input reverse connection protection and output clamping functions.

Benefits of technology

It achieves low-power, fast-response power switching, prevents current backflow, reduces heat generation requirements, is suitable for power master/backup scenarios, enables seamless switching, and reduces circuit size and heat dissipation requirements.

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Abstract

This invention relates to a high-voltage ideal diode controller circuit, comprising a controller chip and an external NMOS transistor. The chip integrates a bandgap reference source, an oscillator, a charge pump, a gate comparator, a fast pull-down comparator, a fast pull-down transistor, a clamping diode, and two 25mV reference sources. The gate comparator monitors the voltage difference between the input voltage VIN and the output voltage VOUT in real time, dynamically adjusting the gate voltage to turn on the NMOS transistor. Under light load conditions, the forward voltage difference is controlled at 25mV, significantly reducing power consumption. The fast pull-down comparator is triggered when VOUT is higher than VIN, quickly turning off the NMOS transistor within 500ns to prevent reverse current flow. The controller chip features soft-start, input reverse connection protection, and output clamping functions, with a simple external circuit. This invention is suitable for power supply main backup systems, achieving seamless switching and significantly reducing size and heat dissipation requirements.
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