Semiconductor device

Abstract

A semiconductor device is provided that includes a substrate including a cell region; a first-conductivity-type semiconductor layer on an upper surface of the substrate; a second-conductivity-type doped well region within the first-conductivity-type semiconductor layer; a gate electrode on the first-conductivity-type semiconductor layer; a gate insulating layer between the first-conductivity-type semiconductor layer and the gate electrode; a source electrode on the second-conductivity-type doped well region; and a drain electrode below a bottom surface of the substrate. The source electrode includes a first source electrode on the gate electrode, a second source electrode on the first source electrode, and a resistive layer between the first source electrode and the second source electrode and including a conductive material having a resistance greater than a resistance of the first source electrode.

Description

Cross-references to related applications

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2024-0191027, filed on December 19, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] This disclosure relates to semiconductor devices. Background Technology

[0003] Power semiconductor devices are used in a variety of fields, including transportation (such as electric vehicles, railways, and trams); renewable energy systems (including solar and wind power); and mobile devices. Power semiconductor devices handle high voltages or high currents and perform functions such as power conversion and control in large power systems or high-output electronic devices. Power semiconductor devices possess the ability and durability to handle high power, allowing them to handle large currents and withstand high voltages. For example, they can handle voltages from hundreds to thousands of volts and currents from tens to thousands of amperes. Power semiconductor devices can improve energy efficiency by minimizing power losses. Furthermore, they can be stably driven even in environments such as high temperatures. Summary of the Invention

[0004] Some aspects of this disclosure provide semiconductor devices that reduce the saturation drain current (Id). sat Without changing the drain / source on-resistance (Rds) on Without altering the structure of the active source contact region (such as changing the channel length and / or not adding additional resistance outside the circuitry (e.g., the package or module), the semiconductor device can prevent short circuits. Furthermore, current spreading can be improved by reducing the current density of the active source contact and mitigating voltage overshoot or source current non-uniformity caused by cell region location.

[0005] A semiconductor device according to one aspect includes: a substrate including a cell region and a peripheral region located outside the cell region; a first conductivity type semiconductor layer located on an upper surface of the substrate; a second conductivity type doped well region located within the first conductivity type semiconductor layer; a gate electrode located on the first conductivity type semiconductor layer; a gate insulating layer located between the first conductivity type semiconductor layer and the gate electrode; a source electrode located on the second conductivity type doped well region; and a drain electrode located below a bottom surface of the substrate, wherein the source electrode includes: a first source electrode located on the gate electrode; a second source electrode located on the first source electrode; and a resistive layer located between the first source electrode and the second source electrode, and includes a conductive material having a resistance greater than that of the first source electrode.

[0006] According to another aspect, a semiconductor device includes: a substrate including a cell region and a peripheral region located outside the cell region; a first conductivity type semiconductor layer located on an upper surface of the substrate; a second conductivity type doped well region located within the first conductivity type semiconductor layer; a gate electrode located on the first conductivity type semiconductor layer; a gate insulating layer located between the first conductivity type semiconductor layer and the gate electrode; a source electrode located on the second conductivity type doped well region; and a drain electrode located below the bottom surface of the substrate, wherein the source electrode includes: a first source electrode located on the gate electrode; a second source electrode located on the first source electrode; and a third source electrode located on the second source electrode, wherein the second source electrode has a resistance greater than that of the first source electrode, and wherein the third source electrode has a resistance greater than that of the second source electrode.

[0007] According to another aspect, a semiconductor device includes: a substrate including a cell region and a peripheral region located outside the cell region; a first conductivity type semiconductor layer located on an upper surface of the substrate; a second conductivity type doped well region located within the first conductivity type semiconductor layer; a gate electrode located on the first conductivity type semiconductor layer; a gate insulating layer located between the first conductivity type semiconductor layer and the gate electrode; a source electrode located on the second conductivity type doped well region; and a drain electrode located below the bottom surface of the substrate, wherein the source electrode includes: a first source electrode located on the gate electrode; and a second source electrode located on the first source electrode and having a resistance greater than that of the first source electrode.

[0008] A method for manufacturing a semiconductor device according to one aspect includes: forming a first conductivity type semiconductor layer on an upper surface of a substrate; forming a second conductivity type doped well region within the first conductivity type semiconductor layer; forming a gate insulating layer and a gate electrode on the first conductivity type semiconductor layer; forming a source electrode on the second conductivity type doped well region; and forming a drain electrode below a bottom surface of the substrate, wherein the source electrode is formed by the following steps: forming a first source electrode on a gate electrode; forming a second interlayer insulating layer covering the first source electrode; etching the second interlayer insulating layer to expose the first source electrode; forming a resistive layer within the etched second interlayer insulating layer; and forming a second source electrode on the second interlayer insulating layer and the resistive layer, wherein the resistive layer is formed of a conductive material having a resistance greater than that of the first source electrode.

[0009] The first source electrode can be formed to have an area larger than that of the cell region in a first direction and a second direction, the first direction and the second direction intersecting each other and being parallel to the upper surface of the substrate.

[0010] The second source electrode can be formed to have an area smaller than that of the first source electrode in both the first and second directions.

[0011] The resistive layer can be formed to have an area smaller than that of the first source electrode in the first and second directions, and the second source electrode and the resistive layer can be formed to partially overlap in the third direction.

[0012] The source electrode can be formed by the following steps: forming a first source electrode on a gate electrode; forming a resistive layer on the first source electrode; forming a second interlayer insulating layer covering the first source electrode and the resistive layer; etching the second interlayer insulating layer to expose the resistive layer; and forming a second source electrode within the etched second interlayer insulating layer. The resistive layer may comprise a conductive material having a resistance greater than that of the first source electrode.

[0013] A source electrode can be formed by the following steps: forming a first source electrode on a gate electrode; forming a first and second interlayer insulating layer covering the first source electrode; etching the first and second interlayer insulating layer to expose the first source electrode; forming a first resistive layer inside the etched first and second interlayer insulating layer; forming a first and third interlayer insulating layer on the first and second interlayer insulating layer and the first resistive layer; etching the first and third interlayer insulating layer to expose the first resistive layer; forming a first and second source electrode inside the etched first and third interlayer insulating layer; forming a second and second interlayer insulating layer covering the first and second source electrode; etching the second and second interlayer insulating layer to expose the first and second source electrode; forming a second resistive layer inside the etched second and second interlayer insulating layer; forming a second and third interlayer insulating layer on the second and second interlayer insulating layer and the second resistive layer; etching the second and third interlayer insulating layer to expose the second resistive layer; and forming a second and second source electrode inside the etched second and third interlayer insulating layer. The resistance of the second source electrode can increase as it is positioned higher in the third direction. The resistance of the resistive layer can increase as it is positioned higher in the third direction.

[0014] According to another aspect of a semiconductor device manufacturing method, the method includes: forming a first conductivity type semiconductor layer on an upper surface of a substrate; forming a second conductivity type doped well region within the first conductivity type semiconductor layer; forming a gate insulating layer and a gate electrode on the first conductivity type semiconductor layer; forming a source electrode on the second conductivity type doped well region; and forming a drain electrode below a bottom surface of the substrate, wherein the source electrode is formed by the following steps: forming a first source electrode on the gate electrode; forming a second source electrode on the first source electrode; and forming a third source electrode on the second source electrode, wherein the second source electrode may have a resistance greater than that of the first source electrode, and the third source electrode may have a resistance greater than that of the second source electrode.

[0015] The source electrode can be formed by the following steps: forming a first source electrode on a gate electrode; forming a second interlayer insulating layer covering the first source electrode; etching the second interlayer insulating layer to expose the first source electrode; forming a second source electrode inside the etched second interlayer insulating layer; and forming a third source electrode on the second interlayer insulating layer and the second source electrode.

[0016] According to another aspect of the semiconductor device manufacturing method, the method includes: forming a first conductivity type semiconductor layer on an upper surface of a substrate; forming a second conductivity type doped well region within the first conductivity type semiconductor layer; forming a gate insulating layer and a gate electrode on the first conductivity type semiconductor layer; forming a source electrode on the second conductivity type doped well region; and forming a drain electrode below a bottom surface of the substrate, wherein the source electrode can be formed by the following steps: forming a first source electrode on a gate electrode; forming a barrier layer covering the first source electrode; and forming a second source electrode on the barrier layer.

[0017] The source electrode can be formed by the following steps: forming a first source electrode on a gate electrode; etching the first source electrode; forming a barrier layer inside the etched first source electrode; and forming a second source electrode inside the first source electrode on which the barrier layer has been formed.

[0018] By reducing the saturated drain current (Id) sat Without changing the drain / source on-resistance (Rds) on Some embodiments of the semiconductor devices described herein can prevent or reduce short circuits without altering the structure in the active source contact region (such as changing the channel length and / or not adding additional resistance outside the circuit (e.g., package or module)).

[0019] Furthermore, in some implementations, current spread can be improved by reducing the current density of the active source contact and improving voltage overshoot or source current non-uniformity caused by cell region location. Attached Figure Description

[0020] Figure 1 This is a top view showing an example of a semiconductor device.

[0021] Figure 2 It is along Figure 1 A cross-sectional view taken from line A-A'.

[0022] Figure 3 This is a circuit diagram of an example semiconductor device.

[0023] Figure 4 It is shown that... Figure 2 A cross-sectional view of an example of a corresponding semiconductor device.

[0024] Figure 5 It is shown that... Figure 2 A cross-sectional view of an example of a corresponding semiconductor device.

[0025] Figure 6 This is a top view showing an example of a semiconductor device.

[0026] Figure 7 It is along Figure 6 A cross-sectional view taken from line A-A'.

[0027] Figure 8 This is a top view showing an example of a semiconductor device.

[0028] Figure 9 It is along Figure 8 A cross-sectional view taken from line A-A'.

[0029] Figure 10 This is a top view showing an example of a semiconductor device.

[0030] Figure 11 It is along Figure 10 A cross-sectional view taken from line A-A'.

[0031] Figure 12 This is a top view showing an example of a semiconductor device.

[0032] Figure 13 It is along Figure 12 A cross-sectional view taken from line A-A'.

[0033] Figure 14 It is shown Figure 13 A cross-sectional view of an example of a corresponding semiconductor device. Detailed Implementation

[0034] In the following, various examples according to this disclosure will be described in detail with reference to the accompanying drawings, enabling those skilled in the art to readily implement this disclosure. It will be understood that this disclosure can be implemented in many different forms and is not limited to the specific examples set forth herein.

[0035] Throughout the specification, the same reference numerals identify the same elements.

[0036] For better understanding and ease of description, the dimensions and thicknesses of the constituent elements as shown in the accompanying drawings can be selected, and this disclosure is not limited to the dimensions and thicknesses shown. In the drawings, the thicknesses of layers, regions, etc., may be exaggerated for clarity. Furthermore, in the drawings, the thicknesses of some layers and regions have been exaggerated for better understanding and ease of description.

[0037] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element may be directly on said other element, or there may be intermediate elements present. Conversely, when an element is referred to as being "directly on" another element, there are no intermediate elements present. The terms "on" or "above" mean that it is positioned on or below the target portion, and do not necessarily mean that it is positioned on the upper side of the target portion based on the direction of gravity.

[0038] Furthermore, unless explicitly stated otherwise, the word “including” and variations such as “contains” or “comprising” will be understood to imply the inclusion of the stated element, but not the exclusion of any other element.

[0039] Furthermore, in this specification, the phrase "in a plane" means viewing the target portion from the top, and the phrase "in a cross section" means viewing from a cross section formed by vertically cutting the target portion from the side.

[0040] Furthermore, throughout the specification, the two directions parallel to the upper surface of the substrate are defined as the first direction D1 and the second direction D2, respectively, and the direction perpendicular to the upper surface of the substrate is described as the third direction D3. For example, the first direction D1 and the second direction D2 can be the length direction and the width direction, respectively, and the third direction D3 can be the thickness direction.

[0041] Figure 1 This is a top view showing a semiconductor device. Figure 2 It is along Figure 1 A cross-sectional view taken from line A-A'. Figure 3 It is a circuit diagram of a semiconductor device.

[0042] For clarity and simplicity, Figure 1 The main features shown are the first source electrode 171, the second source electrode 172, the resistive layer 176, the gate pad 155, and the gate wire 156 of the source electrode 170.

[0043] Reference Figures 1 to 3 The semiconductor device includes a substrate 110, a first conductivity type semiconductor layer 131 located on the upper surface of the substrate 110, a second conductivity type doped well region 133 located within the first conductivity type semiconductor layer 131, a gate electrode 150 located on the first conductivity type semiconductor layer 131 and the second conductivity type doped well region 133, a gate insulating layer 151 located between the first conductivity type semiconductor layer 131 and the gate electrode 150, a source electrode 170 located on the second conductivity type doped well region 133, and a drain electrode 180 located below the bottom surface of the substrate 110.

[0044] The substrate 110 may include a cell region CELL and a peripheral region PERI surrounding the cell region CELL.

[0045] The first source electrode 171 of the source electrode 170 described below can be located on the cell region CELL. The first source electrode 171 can cover the cell region CELL. For example, the cell region CELL can completely overlap with the first source electrode 171 on a third direction D3.

[0046] The gate pad 155 may be located on one side of the first source electrode 171 in either the first direction D1 or the second direction D2. For example, the gate pad 155 may be located in the peripheral region PERI. Additionally, the gate wire 156 extending from the gate pad 155 may be located in the peripheral region PERI. The gate wire 156 may extend to cover the entire peripheral region PERI. In other words, the gate wire 156 may surround the first source electrode 171.

[0047] The first source electrode 171 may extend downward on the third direction D3 and form an active source contact with the second conductivity type doped well region 133 described below. The gate pad 155 and the gate wire 156 may be electrically contacted to the gate electrode 150.

[0048] Semiconductor devices can include transistors. For example, a semiconductor device can be a power semiconductor device. Power semiconductor devices can be categorized based on materials, and examples include SiC power semiconductor devices and GaN power semiconductor devices. Power semiconductor devices can be fabricated using SiC or GaN instead of existing silicon wafers (Si wafers), thereby compensating for the instability of silicon at high temperatures. SiC power semiconductor devices are heat-resistant and have low power loss, making them suitable for electric vehicles, renewable energy systems, etc. GaN power semiconductor devices are more expensive but highly efficient in terms of speed, making them suitable for high-speed charging of mobile devices.

[0049] Substrate 110 may be a semiconductor substrate including SiC. For example, substrate 110 may include a 4H SiC substrate. In some cases, substrate 110 may include a 3C SiC substrate or a 6H SiC substrate, etc. Substrate 110 may be doped with a first conductivity type impurity. For example, the first conductivity type impurity may be an n-type impurity. In other words, substrate 110 may be doped to n-type. Substrate 110 may be heavily doped to n-type. The resistivity of substrate 110 may be greater than or equal to 0.005 Ω·cm and less than or equal to 0.035 Ω·cm. The thickness of substrate 110 may be greater than or equal to 10 μm and less than or equal to 700 μm. The material, doping type, doping concentration, resistivity, or thickness of substrate 110 are not limited thereto and may be varied in various ways. Substrate 110 may have a first surface and a second surface facing each other. The first surface of substrate 110 may be the upper surface of substrate 110, and the second surface of substrate 110 may be the bottom surface of substrate 110.

[0050] The first conductivity type semiconductor layer 131 may be located on a first surface (i.e., the upper surface of the substrate 110). The bottom surface of the first conductivity type semiconductor layer 131 may be in contact with the upper surface of the substrate 110. However, the layer arrangement is not limited thereto, and another layer may be located between the substrate 110 and the first conductivity type semiconductor layer 131. The first conductivity type semiconductor layer 131 may be an epitaxial layer formed from the substrate 110 using an epitaxial growth method. The first conductivity type semiconductor layer 131 may include SiC. For example, the first conductivity type semiconductor layer 131 may include 4H SiC. The first conductivity type semiconductor layer 131 may be doped to n-type. The first conductivity type semiconductor layer 131 may be lightly doped to n-type. The doping concentration of the first conductivity type semiconductor layer 131 may be lower than the doping concentration of the substrate 110. The doping concentration of the first conductivity type semiconductor layer 131 may be greater than or equal to 1 × 10⁻⁶. 15 cm -3 And less than or equal to 1×10 17 cm -3 The thickness of the first conductivity type semiconductor layer 131 can be greater than or equal to 1 μm and less than or equal to 13 μm. The material, doping type, doping concentration, etc. of the first conductivity type semiconductor layer 131 are not limited to this and can be changed in various ways.

[0051] The second conductivity type doped well region 133 may be located within the first conductivity type semiconductor layer 131. The second conductivity type doped well region 133 may be located on top of the first conductivity type semiconductor layer 131. The second conductivity type doped well region 133 may contact the bottom surface of the second conductivity type doped layer 135, as described below. The second conductivity type doped well region 133 may surround the bottom and side surfaces of the first conductivity type doped layer 137, as described below.

[0052] At least a portion of the upper surface of the second conductivity type doped well region 133 may overlap with at least a portion of the gate electrode 150 described below and at least a portion of the gate insulating layer 151 described below on the third direction D3.

[0053] The second conductivity type doped well region 133 may extend from the upper surface of the first conductivity type semiconductor layer 131 in a direction perpendicular to the bottom surface of the first conductivity type semiconductor layer 131. For example, the second conductivity type doped well region 133 may extend from the upper surface of the first conductivity type semiconductor layer 131 in a third direction D3. The second conductivity type doped well region 133 may be formed in at least some regions of the first conductivity type semiconductor layer 131 by ion implantation.

[0054] The second conductivity type doped well region 133 may include SiC. For example, the second conductivity type doped well region 133 may include 4H SiC. The second conductivity type doped well region 133 may be doped to p-type. The second conductivity type doped well region 133 may be lightly doped to p-type. The doping concentration of the second conductivity type doped well region 133 may be greater than or equal to 1 × 10⁻⁶. 17 cm -3 And less than or equal to 1×10 19 cm -3 The material, doping type, doping concentration, etc. of the second conductivity type doped well region 133 are not limited to this and can be changed in various ways.

[0055] The semiconductor device may also include a second conductivity type doped layer 135 and a first conductivity type doped layer 137 located on top of the first conductivity type semiconductor layer 131.

[0056] The second conductivity type doped layer 135 may be located within the second conductivity type doped well region 133. The second conductivity type doped layer 135 may be located on top of the first conductivity type semiconductor layer 131 and may have an upper surface that is in direct contact with the bottom surface of the silicide layer 190 connected to the source electrode 170.

[0057] At least some regions on the upper surface of the second conductivity type doped layer 135 may contact the bottom surface of the silicide layer 190, but this arrangement is not limited to this. For example, at least some regions on the upper surface of the second conductivity type doped layer 135 may contact the bottom surface of the source electrode 170. The second conductivity type doped layer 135 may have a width wider than the width of the source electrode 170.

[0058] The second conductivity type doped layer 135 may extend from the upper surface of the first conductivity type semiconductor layer 131 in the third direction D3. The thickness of the second conductivity type doped layer 135 in the third direction D3 may be less than the thickness of the second conductivity type doped well region 133 in the third direction D3. Additionally, the second conductivity type doped layer 135 may have a width narrower than the width of the second conductivity type doped well region 133. For example, the second conductivity type doped layer 135 may be buried within the second conductivity type doped well region 133. The second conductivity type doped layer 135 may be formed in at least some regions of the second conductivity type doped well region 133 by ion implantation.

[0059] The second conductivity type doped layer 135 may include SiC. For example, the second conductivity type doped layer 135 may include 4HSiC. The second conductivity type doped layer 135 may be doped to p-type. The second conductivity type doped layer 135 may form an ohmic contact with the source electrode 170. For this purpose, the second conductivity type doped layer 135 may be heavily doped to p-type. In some embodiments, the doping concentration of the second conductivity type doped layer 135 may be higher than the doping concentration of the second conductivity type doped well region 133. The doping concentration of the second conductivity type doped layer 135 may be greater than or equal to 1 × 10⁻⁶. 18 cm -3 And less than or equal to 5 × 10 20 cm -3 The material, doping type, and doping concentration of the second conductivity type doped layer 135 are not limited to this and can be changed in various ways.

[0060] A first conductivity type doped layer 137 may be located within a second conductivity type doped well region 133. The first conductivity type doped layer 137 may be located on top of a first conductivity type semiconductor layer 131 and may surround two lateral sides of the second conductivity type doped layer 135. The upper surface of the first conductivity type doped layer 137 may overlap with at least a portion of the gate electrode 150 and at least a portion of the gate insulating layer 151 in the third direction D3. Furthermore, the upper surface of the first conductivity type doped layer 137 may overlap with at least a portion of the source electrode 170 described below in the third direction D3, but this arrangement is not limited thereto. The upper surface of the first conductivity type doped layer 137 may directly contact the gate insulating layer 151.

[0061] A first conductivity type doped layer 137 may extend from the upper surface of the first conductivity type semiconductor layer 131 on the third direction D3. The first conductivity type doped layer 137 may be embedded within the second conductivity type doped well region 133. The thickness of the first conductivity type doped layer 137 on the third direction D3 may be less than the thickness of the second conductivity type doped well region 133 on the third direction D3.

[0062] The first conductivity type doped layer 137 may be a doped region formed by ion implantation in the first conductivity type semiconductor layer 131. The first conductivity type doped layer 137 may include SiC. For example, the first conductivity type doped layer 137 may include 4H SiC. The first conductivity type doped layer 137 may be doped to n-type. The first conductivity type doped layer 137 may be heavily doped to n-type. The doping concentration of the first conductivity type doped layer 137 may be greater than or equal to 1 × 10⁻⁶. 18 cm -3 And less than or equal to 5 × 10 20 cm -3The material, doping type, doping concentration, etc. of the first conductivity type doped layer 137 are not limited to this and can be changed in various ways.

[0063] The gate electrode 150 may be located on the first conductivity type semiconductor layer 131. The gate electrode 150 may be spaced apart from the first conductivity type semiconductor layer 131. For example, the gate electrode 150 may be spaced apart from the first conductivity type semiconductor layer 131 in a vertical direction (e.g., third direction D3) by the gate insulating layer 151. In some embodiments, the semiconductor device may have a planar gate structure. For example, in the semiconductor device, the gate electrode 150 has a flat plate shape having a top surface and a bottom surface, and the bottom surface of the gate electrode 150 may be located at a level higher than the level of the top surface of the first conductivity type semiconductor layer 131. However, the shape is not limited to this, and the semiconductor device may have, for example, a trench-shaped gate structure. For example, in the semiconductor device, a trench of a predetermined depth is formed in the first conductivity type semiconductor layer 131, and the gate electrode 150 may be located inside the trench to be spaced apart from the first conductivity type semiconductor layer 131 in a third direction D3. In addition, the gate electrode 150 may be positioned to be spaced apart from the first conductivity type semiconductor layer 131 in a first direction D1 and / or a second direction D2. The gate electrode 150 may overlap with the second conductivity type doped well region 133 and the first conductivity type doped layer 137 on the third direction D3.

[0064] The gate electrode 150 may include a conductive material. For example, the gate electrode 150 may include polycrystalline silicon doped with impurities. As another example, the gate electrode 150 may include a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, a conductive metal oxynitride, or a combination thereof. The gate electrode 150 may consist of a single layer or multiple layers.

[0065] A gate insulating layer 151 may be located between the first conductivity type semiconductor layer 131 and the gate electrode 150. For example, the gate insulating layer 151 may be located below the gate electrode 150 on a third-direction D3 and cover the bottom surface of the gate electrode 150. The gate electrode 150 may be insulated from the first conductivity type semiconductor layer 131 by the gate insulating layer 151. The thickness of the gate insulating layer 151 may be constant.

[0066] The gate insulating layer 151 may overlap with the second conductivity type doped well region 133 and the first conductivity type doped layer 137 on the third direction D3. The bottom surface of the gate insulating layer 151 may directly contact the second conductivity type doped well region 133 and the first conductivity type doped layer 137, but this arrangement is not limited to this.

[0067] The gate insulating layer 151 may include an insulating material. For example, the gate insulating layer 151 may include SiO2. However, it is not limited to this, and the material of the gate insulating layer 151 may be varied in various ways. As another example, the gate insulating layer 151 may include SiN, SiON, SiC, SiCN, or combinations thereof. The gate insulating layer 151 may consist of a single layer or multiple layers.

[0068] The first interlayer insulating layer 140 may be located on the first conductivity type semiconductor layer 131. For example, the first interlayer insulating layer 140 may be located on the gate electrode 150. For example, the first interlayer insulating layer 140 may cover the upper surface and side surface of the gate electrode 150. The first interlayer insulating layer 140 may cover the side portion of the gate insulating layer 151. The first interlayer insulating layer 140 may also be located on the first conductivity type doped layer 137. The first interlayer insulating layer 140 may have a bottom surface that contacts at least a portion of the upper surface of the first conductivity type doped layer 137. The gate electrode 150 may be insulated from the source electrode 170 through the first interlayer insulating layer 140.

[0069] The first interlayer insulating layer 140 may include an insulating material. For example, the first interlayer insulating layer 140 may include the same insulating material as the gate insulating layer 151. For example, the first interlayer insulating layer 140 may include SiO2. However, the material is not limited to this, and the first interlayer insulating layer 140 may include various types of insulating materials to insulate the gate electrode 150 from the source electrode 170. For example, the first interlayer insulating layer 140 may include SiOP, SiN, SiON, or combinations thereof. The first interlayer insulating layer 140 may consist of a single layer or multiple layers. When the first interlayer insulating layer 140 is made of the same material as the gate insulating layer 151, the boundary between the first interlayer insulating layer 140 and the gate insulating layer 151 may not be clearly distinguishable at the portion where the first interlayer insulating layer 140 and the gate insulating layer 151 meet.

[0070] The source electrode 170 may be located on the second conductivity type doped well region 133. A second conductivity type doped layer 135 and a first conductivity type doped layer 137 may be located between the source electrode 170 and the second conductivity type doped well region 133. The source electrode 170 may be electrically connected to the second conductivity type doped well region 133 via the second conductivity type doped layer 135. Current or voltage may be supplied to the cell region CELL via the source electrode 170.

[0071] The source electrode 170 may include a first source electrode 171 and a second source electrode 172.

[0072] The first source electrode 171 may be located on the second conductivity type doped well region 133. The first source electrode 171 may be located on either side of the gate electrode 150. However, the arrangement is not limited to this, and the first source electrode 171 may be located on only one side of the gate electrode 150. The first source electrode 171 may be located on the gate electrode 150.

[0073] The first interlayer insulating layer 140 may be located between the first source electrode 171 and the gate electrode 150. The first source electrode 171 may be spaced apart from the gate electrode 150 by the first interlayer insulating layer 140. The first source electrode 171 may be in contact with the side surface and the top surface of the first interlayer insulating layer 140.

[0074] For example, the first source electrode 171 may have a portion located between (and / or laterally arranged relative to) different portions of the gate electrode 150 and a portion located on the gate electrode 150. The portion of the first source electrode 171 located between (and / or laterally arranged relative to) different portions of the gate electrode 150 is hereinafter referred to as the second portion of the first source electrode 171.

[0075] The portion of the first source electrode 171 located on the gate electrode 150 may be located on the cell region CELL. The portion of the first source electrode 171 located on the gate electrode 150 may cover the cell region CELL.

[0076] On a plane extending along the first direction D1 and the second direction D2 and perpendicular to the third direction D3 (e.g., in...) Figure 1 In the first source electrode 171, the portion located on the gate electrode 150 may have a larger area (lateral area) than the cell region CELL in the first direction D1 and the second direction D2. For example, the portion of the first source electrode 171 located on the gate electrode 150 may only partially overlap with the cell region CELL in the third direction D3, but the cell region CELL may completely overlap with the portion of the first source electrode 171 located on the gate electrode 150 in the third direction D3.

[0077] The second portion of the first source electrode 171 may be located on both sides of the gate electrode 150. The second portion of the first source electrode 171 may be laterally surrounded by the gate electrode 150, and the first interlayer insulating layer 140 is inserted between the second portion of the first source electrode 171 and the gate electrode 150.

[0078] However, the arrangement of the second portion of the first source electrode 171 is not limited to this, and the second portion of the first source electrode 171 may be located only on one side of the gate electrode 150.

[0079] The second portion of the first source electrode 171 may be a portion extending downwards from the portion located on the gate electrode 150 of the first source electrode 171 toward the second conductivity type doped well region 133 in the third direction D3. The second portion of the first source electrode 171 may extend downwards in the third direction D3 and may form an active source contact with the second conductivity type doped well region 133. The second portion of the first source electrode 171 may overlap with the second conductivity type doped layer 135 and the first conductivity type doped layer 137 in the third direction D3. However, this arrangement is not limited to this, and the second portion of the first source electrode 171 may not overlap with the first conductivity type doped layer 137 in the third direction D3. The upper surface of the first conductivity type doped layer 137 may be covered by the gate insulating layer 151.

[0080] For example, the first source electrode 171 may include tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), nickel (Ni), platinum (Pt), nickel-platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), titanium nitride (TiN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), tungsten nitride (WN), or combinations thereof, but is not limited thereto. The first source electrode 171 may consist of a single layer or multiple layers.

[0081] The second source electrode 172 is located on the first source electrode 171.

[0082] For example, the second source electrode 172 may be located on the central portion of the upper surface of the first source electrode 171. The second source electrode 172 is electrically connected to the first source electrode 171, and an externally supplied source voltage can be applied to the first source electrode 171 through the second source electrode 172.

[0083] On a plane (e.g., as Figure 1 As shown in the diagram, the second source electrode 172 may have a smaller area (lateral area) than the first source electrode 171 in the first direction D1 and the second direction D2. For example, the first source electrode 171 may only partially overlap with the second source electrode 172 in the third direction D3, but the second source electrode 172 may completely overlap with the first source electrode 171 in the third direction D3.

[0084] The second source electrode 172 may have a resistance greater than that of the first source electrode 171. For example, the resistance of the second source electrode 172 may be greater than or equal to 10 times the resistance of the first source electrode 171 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, greater than or equal to 90 times, greater than or equal to 100 times, greater than or equal to 200 times, greater than or equal to 300 times, greater than or equal to 400 times, greater than or equal to 500 times). (The resistance is greater than or equal to 600 times, greater than or equal to 700 times, greater than or equal to 800 times, greater than or equal to 900 times, greater than or equal to 1000 times, greater than or equal to 2000 times, greater than or equal to 3000 times, greater than or equal to 4000 times, greater than or equal to 5000 times, greater than or equal to 6000 times, greater than or equal to 7000 times, greater than or equal to 8000 times, or greater than or equal to 9000 times), and less than or equal to the resistance of the first source electrode 171. 10,000 times (for example, less than or equal to 9,000 times, less than or equal to 8,000 times, less than or equal to 7,000 times, less than or equal to 6,000 times, less than or equal to 5,000 times, less than or equal to 4,000 times, less than or equal to 3,000 times, less than or equal to 2,000 times, less than or equal to 1,000 times, less than or equal to 900 times, less than or equal to 800 times, less than or equal to 700 times, less than or equal to 600 times, less than or equal to 500 times, less than...) (The resistance of the first source electrode 171 can be greater than or equal to 400 times, less than or equal to 300 times, less than or equal to 200 times, less than or equal to 100 times, less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and can be greater than or equal to 10 times the resistance of the first source electrode 171 and less than or equal to 10,000 times the resistance of the first source electrode 171.

[0085] For example, the resistivity of the first source electrode 171 can be greater than or equal to 1.0 × 10⁻⁶ at 0 °C. -8 Ω·m (e.g., greater than or equal to 2.0 × 10⁻⁶) -8 Ω·m, greater than or equal to 3.0 × 10 -8 Ω·m, greater than or equal to 4.0 × 10 -8 Ω·m, greater than or equal to 5.0 × 10 -8 Ω·m, greater than or equal to 6.0 × 10 -8 Ω·m, greater than or equal to 7.0 × 10 -8 Ω·m, greater than or equal to 8.0 × 10 -8 Ω·m, or greater than or equal to 9.0 × 10 -8Ω·m), and less than or equal to 10.0 × 10 -8 Ω·m (e.g., less than or equal to 9.0 × 10⁻⁶) -8 Ω·m, less than or equal to 8.0 × 10 -8 Ω·m, less than or equal to 7.0 × 10 -8 Ω·m, less than or equal to 6.0 × 10 -8 Ω·m, less than or equal to 5.0 × 10 -8 Ω·m, less than or equal to 4.0 × 10 -8 Ω·m, less than or equal to 3.0 × 10 -8 Ω·m, or less than or equal to 2.0 × 10 -8 (Ω·m), and can be greater than or equal to 1.0 × 10 -8 Ω·m and less than or equal to 10.0 × 10 -8 Ω·m.

[0086] The resistivity of the second source electrode 172 can be greater than 10.0 × 10⁻⁶ at 0 °C. -8 Ω·m (e.g., greater than or equal to 20.0 × 10⁻⁶) -8 Ω·m, greater than or equal to 30.0 × 10 -8 Ω·m, greater than or equal to 40.0 × 10 -8 Ω·m, greater than or equal to 50.0 × 10 -8 Ω·m, greater than or equal to 60.0 × 10 -8 Ω·m, greater than or equal to 70.0 × 10 -8 Ω·m, greater than or equal to 80.0 × 10 -8 Ω·m, greater than or equal to 90.0 × 10 -8 Ω·m, greater than or equal to 100.0 × 10 -8 Ω·m, greater than or equal to 200.0 × 10 -8 Ω·m, greater than or equal to 300.0 × 10 -8 Ω·m, greater than or equal to 400.0 × 10 -8 Ω·m, greater than or equal to 500.0 × 10 -8 Ω·m, greater than or equal to 600.0 × 10 -8 Ω·m, greater than or equal to 700.0 × 10 -8 Ω·m, greater than or equal to 800.0 × 10 -8 Ω·m, or greater than or equal to 900.0 × 10 -8 (Ω·m), and less than or equal to 1000.0 × 10 -8 Ω·m (e.g., less than or equal to 900.0 × 10⁻⁶) -8Ω·m, less than or equal to 800.0 × 10 -8 Ω·m, less than or equal to 700.0 × 10 -8 Ω·m, less than or equal to 600.0 × 10 -8 Ω·m, less than or equal to 500.0 × 10 -8 Ω·m, less than or equal to 400.0 × 10 -8 Ω·m, less than or equal to 300.0 × 10 -8 Ω·m, less than or equal to 200.0 × 10 -8 Ω·m, less than or equal to 100.0 × 10 -8 Ω·m, less than or equal to 90.0 × 10 -8 Ω·m, less than or equal to 80.0 × 10 -8 Ω·m, less than or equal to 70.0 × 10 -8 Ω·m, less than or equal to 60.0 × 10 -8 Ω·m, less than or equal to 50.0 × 10 -8 Ω·m, less than or equal to 40.0 × 10 -8 Ω·m, less than or equal to 30.0 × 10 -8 Ω·m, or less than or equal to 20.0 × 10 -8 (Ω·m), and can be greater than or equal to 10.0 × 10 -8 Ω·m and less than or equal to 1000.0 × 10 -8 Ω·m, or greater than or equal to 100.0 × 10 -8 Ω·m and less than or equal to 1000.0 × 10 -8 Ω·m.

[0087] For example, the resistance of the first source electrode 171 and the second source electrode 172 can be measured using a TLM (Transmission Line Measurement) analysis method. For instance, a MaxScience JVL device can be used to perform TLM analysis. Based on the TLM analysis, the resistance value can be measured according to the length of the first source electrode 171 or the second source electrode 172.

[0088] For example, the second source electrode 172 may be, but is not limited to, a material having a higher resistance than the first source electrode 171. For example, the second source electrode 172 may include palladium (Pd), tin (Sn), tantalum (Ta), chromium (Cr), strontium (Sr), antimony (Sb), zirconium (Zr), rubidium (Rb), manganese (Mn), polycrystalline silicon, tantalum carbonitride (TaCN), tantalum carbide (TaC), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), titanium tantalum nitride (TaTiN), aluminum tantalum nitride (TaAlN), or combinations thereof, and may consist of a single layer or multiple layers.

[0089] For example, the thickness of the second source electrode 172 can be greater than or equal to 10 nm (e.g., greater than or equal to 20 nm, greater than or equal to 30 nm, greater than or equal to 40 nm, greater than or equal to 50 nm, greater than or equal to 60 nm, greater than or equal to 70 nm, greater than or equal to 80 nm, greater than or equal to 90 nm, greater than or equal to 100 nm, greater than or equal to 200 nm, greater than or equal to 300 nm, greater than or equal to 400 nm, greater than or equal to 500 nm, greater than or equal to 600 nm, greater than or equal to 700 nm, greater than or equal to 800 nm, greater than or equal to 900 nm, greater than or equal to 1 μm, greater than or equal to 2 μm, greater than or equal to 3 μm, greater than or equal to 4 μm, greater than or equal to 5 μm, greater than or equal to 6 μm, greater than or equal to 7 μm, greater than or equal to 8 μm, or greater than or equal to 9 μm), and can be less than or equal to 10 μm (e.g., less than or equal to 9 μm, less than or equal to 8 μm, less than or equal to 7 μm). μm, less than or equal to 6 μm, less than or equal to 5 μm, less than or equal to 4 μm, less than or equal to 3 μm, less than or equal to 2 μm, less than or equal to 1 μm, less than or equal to 900 nm, less than or equal to 800 nm, less than or equal to 700 nm, less than or equal to 600 nm, less than or equal to 500 nm, less than or equal to 400 nm, less than or equal to 300 nm, less than or equal to 200 nm, less than or equal to 100 nm, less than or equal to 90 nm, less than or equal to 80 nm, less than or equal to 70 nm, less than or equal to 60 nm, less than or equal to 50 nm, less than or equal to 40 nm, less than or equal to 30 nm, or less than or equal to 20 nm), and can be greater than or equal to 10 nm and less than or equal to 10 μm. Here, in a section cut along the first direction D1 and the third direction D3 and perpendicular to the second direction D2 (e.g., Figure 2 In the second source electrode 172, the thickness can be the shortest distance from the bottom surface to the top surface of the second source electrode 172 in the third direction D3.

[0090] The source electrode 170 may also include a resistive layer 176 located between the first source electrode 171 and the second source electrode 172. For example, the first source electrode 171, the resistive layer 176, and the second source electrode 172 may be stacked sequentially on a third-direction D3.

[0091] The first source electrode 171 can be electrically connected to the second source electrode 172 through the resistive layer 176. For example, the first source electrode 171 and the second source electrode 172 may not be in direct contact and may be spaced apart from each other on the third direction D3, with the resistive layer 176 located between the first source electrode 171 and the second source electrode 172.

[0092] On a plane (e.g., in) Figure 1 In the first direction D1 and the second direction D2, the resistive layer 176 may have a smaller area (lateral area) than the area of ​​the first source electrode 171. For example, the first source electrode 171 may only partially overlap with the resistive layer 176 in the third direction D3, but the resistive layer 176 may completely overlap with the first source electrode 171 in the third direction D3.

[0093] On a plane (e.g., in) Figure 1 In the middle, the area (lateral area) of the resistive layer 176 in the first direction D1 and the second direction D2 can be smaller, larger, or the same as the area of ​​the second source electrode 172. In addition, the second source electrode 172 and the resistive layer 176 can partially overlap each other in the third direction D3.

[0094] The resistive layer 176 may have a resistance greater than that of the first source electrode 171. In addition, the resistance of the resistive layer 176 may be less than or equal to the resistance of the second source electrode 172.

[0095] For example, the resistance of the resistive layer 176 may be greater than or equal to 10 times the resistance of the first source electrode 171 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, or greater than or equal to 90 times), and less than or equal to 100 times the resistance of the first source electrode 171 (e.g., less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and greater than or equal to 10 times the resistance of the first source electrode 171 and less than or equal to 100 times the resistance of the first source electrode 171.

[0096] The resistance of the second source electrode 172 can be greater than or equal to 10 times the resistance of the resistive layer 176 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, or greater than or equal to 90 times), and can be less than or equal to 100 times the resistance of the resistive layer 176 (e.g., less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and can be greater than or equal to 10 times the resistance of the resistive layer 176 and less than or equal to 100 times the resistance of the resistive layer 176.

[0097] For example, the resistivity of resistive layer 176 can be greater than 10.0 × 10⁻⁶ at 0 °C. -8 Ω·m (e.g., greater than or equal to 20.0 × 10⁻⁶) -8 Ω·m, greater than or equal to 30.0 × 10 -8 Ω·m, greater than or equal to 40.0 × 10 -8 Ω·m, greater than or equal to 50.0 × 10 -8 Ω·m, greater than or equal to 60.0 × 10 -8 Ω·m, greater than or equal to 70.0 × 10 -8 Ω·m, greater than or equal to 80.0 × 10 -8 Ω·m, or greater than or equal to 90.0 × 10 -8 (Ω·m), and less than 100.0 × 10 -8 Ω·m (e.g., less than or equal to 90.0 × 10⁻⁶) -8 Ω·m, less than or equal to 80.0 × 10 -8 Ω·m, less than or equal to 70.0 × 10 -8 Ω·m, less than or equal to 60.0 × 10 -8 Ω·m, less than or equal to 50.0 × 10 -8 Ω·m, less than or equal to 40.0 × 10 -8 Ω·m, less than or equal to 30.0 × 10 -8 Ω·m, or less than or equal to 20.0 × 10 -8 (Ω·m), and can be greater than 10.0×10 -8 Ω·m and less than 100.0×10 -8 Ω·m.

[0098] For example, the resistance of the resistive layer 176 can be measured using a TLM (Transmission Line Measurement) analysis method. For instance, a MaxScience JVL device can be used to perform the TLM analysis. Based on the TLM analysis, the resistance value can be measured according to the length of the resistive layer 176.

[0099] For example, the resistive layer 176 may be, but is not limited to, a conductive material having a resistance (or resistivity) greater than that of the first source electrode 171. For example, the resistive layer 176 may include palladium (Pd), tin (Sn), tantalum (Ta), chromium (Cr), strontium (Sr), antimony (Sb), zirconium (Zr), rubidium (Rb), manganese (Mn), polycrystalline silicon, tantalum carbonitride (TaCN), tantalum carbide (TaC), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), tantalum aluminum nitride (TaAlN), or combinations thereof, and may consist of a single layer or multiple layers.

[0100] For example, when resistive layer 176 comprises polycrystalline silicon, the resistivity of the polycrystalline silicon can be controlled to be greater than 10.0 × 10⁻⁶ at 0 °C, depending on the type and concentration of the dopant elements. -8 Ω·m and less than 100.0×10 -8 Ω·m.

[0101] For example, the thickness of resistive layer 176 can be greater than or equal to 10 nm (e.g., greater than or equal to 20 nm, greater than or equal to 30 nm, greater than or equal to 40 nm, greater than or equal to 50 nm, greater than or equal to 60 nm, greater than or equal to 70 nm, greater than or equal to 80 nm, greater than or equal to 90 nm, greater than or equal to 100 nm, greater than or equal to 200 nm, greater than or equal to 300 nm, greater than or equal to 400 nm, greater than or equal to 500 nm, greater than or equal to 600 nm, greater than or equal to 700 nm, greater than or equal to 800 nm, greater than or equal to 900 nm, greater than or equal to 1 μm, greater than or equal to 2 μm, greater than or equal to 3 μm, greater than or equal to 4 μm, greater than or equal to 5 μm, greater than or equal to 6 μm, greater than or equal to 7 μm, greater than or equal to 8 μm, or greater than or equal to 9 μm), and can be less than or equal to 10 μm (e.g., less than or equal to 9 μm, less than or equal to 8 μm, less than or equal to 7 μm). μm, less than or equal to 6 μm, less than or equal to 5 μm, less than or equal to 4 μm, less than or equal to 3 μm, less than or equal to 2 μm, less than or equal to 1 μm, less than or equal to 900 nm, less than or equal to 800 nm, less than or equal to 700 nm, less than or equal to 600 nm, less than or equal to 500 nm, less than or equal to 400 nm, less than or equal to 300 nm, less than or equal to 200 nm, less than or equal to 100 nm, less than or equal to 90 nm, less than or equal to 80 nm, less than or equal to 70 nm, less than or equal to 60 nm, less than or equal to 50 nm, less than or equal to 40 nm, less than or equal to 30 nm, or less than or equal to 20 nm), and can be greater than or equal to 10 nm and less than or equal to 10 μm. Here, in a section cut along the first direction D1 and the third direction D3 and perpendicular to the second direction D2 (e.g., Figure 2 In the process, the thickness of the resistor layer 176 can be the shortest distance from the bottom surface to the top surface of the resistor layer 176 in the third direction D3.

[0102] The second interlayer insulating layer 175 may be located on the first source electrode 171. The second interlayer insulating layer 175 may cover the upper surface of the first source electrode 171. In addition, the second interlayer insulating layer 175 may cover the side surface of the resistive layer 176.

[0103] For example, the second interlayer insulating layer 175 may be located between the first source electrode 171 and the second source electrode 172. The first source electrode 171 and the second source electrode 172 may be separated from each other by the second interlayer insulating layer 175, and the first source electrode 171 and the second source electrode 172 may be electrically connected to each other by the resistive layer 176.

[0104] The upper surface of the second interlayer insulating layer 175 can be at the same level as the upper surface of the resistive layer 176 in the same direction D3. For example, the upper surfaces of the second interlayer insulating layer 175 and the upper surfaces of the resistive layer 176 can form coplanar surfaces. The resistive layer 176 can be located within the second interlayer insulating layer 175, and the second source electrode 172 can be located on the second interlayer insulating layer 175.

[0105] The second interlayer insulating layer 175 may include an insulating material. For example, the second interlayer insulating layer 175 may include SiO2. However, the material is not limited to this, and the second interlayer insulating layer 175 may include various types of insulating materials used to insulate the first source electrode 171 and the second source electrode 172. For example, the second interlayer insulating layer 175 may include SiOP, SiN, SiON, or combinations thereof. The second interlayer insulating layer 175 may consist of a single layer or multiple layers.

[0106] In SiC power semiconductor devices, there are methods to control the current to prevent short circuits. In this case, the resistance of the channels, etc., increases, thus increasing the drain / source on-state resistance (Rds). on This increases the channel length. Therefore, the channel length can be reduced to decrease Rds. on However, changing the channel length requires increasing the current, which causes a saturation drain current (Id). sat The loss is expected to be 0.5%. Therefore, it is anticipated that Rds will remain unchanged. on And reduce Id sat At the same time, it prevents short circuits.

[0107] Some implementations of the semiconductor device described herein (such as...) Figures 1 to 3 The embodiment includes a source electrode 170, which includes a first source electrode 171 located on the gate electrode 150 and a second source electrode 172 located on the first source electrode 171 and having a resistance greater than that of the first source electrode 171. As another example, the source electrode 170 may include a resistive layer 176 located between the first source electrode 171 and the second source electrode 172, and includes a conductive material having a resistance (or resistivity) greater than that of the first source electrode 171.

[0108] For example, the source electrode 170 includes at least one of a second source electrode 172 and a resistive layer 176, and the source electrode 170 has a higher resistance as it is positioned higher in the third direction D3 in the active source contact region of the source electrode 170 contacting the second conductivity type doped well region 133.

[0109] Therefore, as Figure 3As shown in the circuit diagram, the gate pad 155 on the gate G side is in direct contact with the metal, but the current entering from the source S side is supplied through a second source electrode 172 with high resistance and / or a resistive layer 176. In this way, if the local resistance in the current path on the source S side is large, a large current flows due to the ballast resistor principle, and the potential difference between the gate G and the source S decreases due to the voltage drop. When the potential difference between the gate G and the source S decreases, the channel is closed, and the current is limited to prevent short circuits.

[0110] Therefore, by reducing Id sat Without having to change Rd son Furthermore, it is not necessary to change the structure of the active source contact area (such as changing the channel length) without adding additional resistance outside the circuit (e.g., package or module) to prevent or reduce short circuits.

[0111] Furthermore, the second source electrode 172 and / or resistive layer 176 located at the upper part of the source electrode 170 can have relatively high resistance, and the first source electrode 171 located at the bottom of the source electrode 170 and forming an active source contact can have relatively low resistance. Compared with the area of ​​the second source electrode 172 and / or resistive layer 176, the area of ​​the first source electrode 171 can have a relatively wide area, which can reduce the current density of the active source contact and reduce voltage overshoot or source current non-uniformity caused by the cell location, thereby improving current spread.

[0112] For example, a semiconductor device can be manufactured by the following steps: forming a first conductivity type semiconductor layer 131 on the upper surface of a substrate 110; forming a second conductivity type doped well region 133 within the first conductivity type semiconductor layer 131; forming a gate insulating layer 151 and a gate electrode 150 on the first conductivity type semiconductor layer 131; forming a source electrode 170 on the second conductivity type doped well region 133; and forming a drain electrode 180 below the bottom surface of the substrate 110. The source electrode 170 can be formed by the following steps: forming a first source electrode 171 on the gate electrode 150; forming a second interlayer insulating layer 175 covering the first source electrode 171; etching the second interlayer insulating layer 175 to expose the first source electrode 171; forming a resistive layer 176 within the etched second interlayer insulating layer 175; and forming a second source electrode 172 on the second interlayer insulating layer 175 and the resistive layer 176. The resistive layer 176 can be formed of a material comprising a conductive material having a resistance (or resistivity) greater than that of the first source electrode 171.

[0113] Furthermore, the first source electrode 171 can be formed to have an area larger than the area of ​​the cell region CELL in the first direction D1 and the second direction D2. The second source electrode 172 can be formed to have an area smaller than the area of ​​the first source electrode 171 in the first direction D1 and the second direction D2. The resistive layer 176 has an area smaller than the area of ​​the first source electrode 171 in the first direction D1 and the second direction D2, and the second source electrode 172 and the resistive layer 176 can be formed such that they only partially overlap in the third direction D3.

[0114] The semiconductor device may also include a silicide layer 190, which is located between the source electrode 170 and the second conductivity type doped layer 135 and between the source electrode 170 and the first conductivity type doped layer 137.

[0115] The silicide layer 190 can be conformally positioned along the interfaces between the source electrode 170 and the second conductivity type doped layer 135, and between the source electrode 170 and the first conductivity type doped layer 137. The bottom surface of the silicide layer 190 can directly contact the second conductivity type doped layer 135 and the first conductivity type doped layer 137. The upper surface of the silicide layer 190 can directly contact the source electrode 170. The silicide layer 190 can include a metal silicide material. For example, the silicide layer 190 can include tungsten silicide (WSi), titanium silicide (TiSi), cobalt silicide (CoSi), nickel silicide (NiSi), or combinations thereof.

[0116] In the manufacturing process, a silicide layer 190 can be formed by performing a silicide process on the upper surfaces of the second conductivity type doped layer 135 and the first conductivity type doped layer 137. However, the process is not limited to this, and as another example, after forming the source electrode 170, a subsequent annealing process can be performed to reduce the contact resistance between the second conductivity type doped layer 135 and the source electrode 170, and between the first conductivity type doped layer 137 and the source electrode 170. Therefore, the silicide layer 190 can be formed along the interfaces between the source electrode 170 and the second conductivity type doped layer 135, and between the source electrode 170 and the first conductivity type doped layer 137.

[0117] The drain electrode 180 may be located below the second surface (i.e., the bottom surface) of the substrate 110. The upper surface of the drain electrode 180 may contact the bottom surface of the substrate 110. The drain electrode 180 may have an ohmic contact with the substrate 110. Compared to other regions, the region within the substrate 110 that contacts the drain electrode 180 may be doped at a relatively high concentration. However, the construction is not limited to this, and another predetermined layer may be located between the drain electrode 180 and the substrate 110. For example, a silicide layer may be located between the drain electrode 180 and the substrate 110. The silicide layer may include a metal silicide material. The metal silicide layer enables a smooth electrical connection between the drain electrode 180 and the substrate 110.

[0118] The drain electrode 180 may include a conductive material. For example, the drain electrode 180 may include a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal oxynitride. The drain electrode 180 may include the same material as the source electrode 170, or it may include a different material.

[0119] For example, the drain electrode 180 can be titanium (Ti), titanium nitride (TiN), titanium silicon nitride (TiSiN), titanium aluminum nitride (TiAlN), titanium carbide (TiC), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), tantalum (Ta), tantalum carbide (TaC), tantalum nitride (TaN), tantalum carbonitride (TaCN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), tantalum aluminum nitride (TaAlN), tungsten (W), or tungsten nitride. The source electrode 170 may consist of a single layer or multiple layers. The drain electrode 180 may consist of a single layer or multiple layers.

[0120] For example, the thickness of the drain electrode 180 can be greater than or equal to 100 nm (e.g., greater than or equal to 1 μm, greater than or equal to 2 μm, greater than or equal to 3 μm, greater than or equal to 4 μm, greater than or equal to 5 μm, greater than or equal to 6 μm, greater than or equal to 7 μm, greater than or equal to 8 μm, or greater than or equal to 9 μm), and can be less than or equal to 10 μm (e.g., less than or equal to 9 μm, less than or equal to 8 μm, less than or equal to 7 μm, less than or equal to 6 μm, less than or equal to 5 μm, less than or equal to 4 μm, less than or equal to 3 μm, less than or equal to 2 μm, or less than or equal to 1 μm), and can be greater than or equal to 100 nm and less than or equal to 10 μm, or greater than or equal to 100 nm and less than or equal to 3 μm.

[0121] In the following text, reference will be made to Figures 4 to 14 Examples to describe semiconductor devices.

[0122] Figure 4 It is shown that... Figure 2 Cross-sectional view of the corresponding semiconductor device. Figure 4 The examples shown in the text are similar to Figure 2 The examples shown are substantially the same or similar, and therefore repeated descriptions will be omitted and the differences will be explained primarily. Additionally, the same reference numerals are used for the same parts.

[0123] Reference Figure 4 The second interlayer insulating layer 175 may be located on the first source electrode 171. The second interlayer insulating layer 175 may cover the upper surface of the first source electrode 171. The second interlayer insulating layer 175 may cover the upper surface and side surface of the resistive layer 176. In addition, the second interlayer insulating layer 175 may cover the side surface of the second source electrode 172.

[0124] The upper surface of the second interlayer insulating layer 175 can be at a higher level in the third direction D3 than the upper surface of the resistive layer 176 in the third direction D3. Therefore, the second interlayer insulating layer 175 can cover the upper surface of the resistive layer 176, and the resistive layer 176 can be located within the second interlayer insulating layer 175.

[0125] The upper surface of the second interlayer insulating layer 175 can be at the same level as the upper surface of the second source electrode 172 in the third direction D3. In other words, the upper surface of the second interlayer insulating layer 175 and the upper surface of the second source electrode 172 can form a coplanar surface. Therefore, the second source electrode 172 can be located within the second interlayer insulating layer 175.

[0126] For example, a semiconductor device can be manufactured by the following steps: forming a first conductivity type semiconductor layer 131 on the upper surface of a substrate 110; forming a second conductivity type doped well region 133 within the first conductivity type semiconductor layer 131; forming a gate insulating layer 151 and a gate electrode 150 on the first conductivity type semiconductor layer 131; forming a source electrode 170 on the second conductivity type doped well region 133; and forming a drain electrode 180 below the bottom surface of the substrate 110. The source electrode 170 can be formed by the following steps: forming a resistive layer 176 on the first source electrode 171; forming a second interlayer insulating layer 175 covering the first source electrode 171 and the resistive layer 176; etching the second interlayer insulating layer 175 to expose a portion of the resistive layer 176; and subsequently forming a second source electrode 172 within the etched second interlayer insulating layer 175. The second interlayer insulating layer 175 can also be used as a passivation layer.

[0127] Figure 5 It is shown that... Figure 2 Cross-sectional view of the corresponding semiconductor device. Figure 5 The examples shown in the text are similar to Figure 2 The examples shown are substantially the same or similar, and therefore repeated descriptions will be omitted and the differences will be explained primarily. Additionally, the same reference numerals are used for the same parts.

[0128] Reference Figure 5 The source electrode 170 may include a plurality of second source electrodes 172_1, 172_2, 172_3 and a plurality of resistive layers 176_1, 176_2, 176_3. The plurality of second source electrodes 172_1, 172_2, 172_3 and the plurality of resistive layers 176_1, 176_2, 176_3 may be alternately stacked on the third-direction D3.

[0129] As an example, Figure 5 The source electrode 170 is shown to include three second source electrodes 172_1, 172_2, and 172_3, and three resistive layers 176_1, 176_2, and 176_3. In other words, the source electrode 170 may include a first resistive layer 176_1 located on the first source electrode 171, a first second source electrode 172_1 located on the first resistive layer 176_1, a second resistive layer 176_2 located on the first second source electrode 172_1, a second second source electrode 172_2 located on the second resistive layer 176_2, a third resistive layer 176_3 located on the second second source electrode 172_2, and a third second source electrode 172_3 located on the third resistive layer 176_3.

[0130] However, the layer structure is not limited to this, and the source electrode 170 may include a second source electrode 172 with two or more layers (e.g., three or more layers, four or more layers, five or more layers, six or more layers, seven or more layers, eight or more layers, nine or more layers, ten or more layers, twenty or more layers, thirty or more layers, forty or more layers, fifty or more layers, sixty or more layers, seventy or more layers, eighty or more layers, or ninety or more layers), and may include less than or equal to The second source electrode 172 has 100 layers (e.g., less than or equal to 90 layers, less than or equal to 80 layers, less than or equal to 70 layers, less than or equal to 60 layers, less than or equal to 50 layers, less than or equal to 40 layers, less than or equal to 30 layers, less than or equal to 20 layers, less than or equal to 10 layers, less than or equal to 9 layers, less than or equal to 8 layers, less than or equal to 7 layers, less than or equal to 6 layers, less than or equal to 5 layers, less than or equal to 4 layers, less than or equal to 3 layers, or less than or equal to 2 layers), and a second source electrode 172 has more than or equal to 2 layers and less than or equal to 100 layers. However, if the number of layers in the second source electrode 172 is too large, cracks or stress may occur in the second interlayer insulation layer 175 during dicing.

[0131] Furthermore, the source electrode 170 may include two or more resistive layers 176 (e.g., three or more, four or more, five or more, six or more, seven or more, eight or more, nine or more, ten or more, twenty or more, thirty or more, forty or more, fifty or more, sixty or more, seven or more, eight or more, nine or more, ten or more, twenty or more, thirty or more, forty or more, fifty or more, forty or more, for fifty or more, for sixty or more, for seventy or more, for eighty or more, or for ninety or more), and may include fewer than or equal to 100 layers (e.g., [missing information]). For example, the resistive layer 176 may have 90 or fewer layers, 80 or fewer layers, 70 or fewer layers, 60 or fewer layers, 50 or fewer layers, 40 or fewer layers, 30 or fewer layers, 20 or fewer layers, 10 or fewer layers, 9 or fewer layers, 8 or fewer layers, 7 or fewer layers, 6 or fewer layers, 5 or fewer layers, 4 or fewer layers, 3 or fewer layers, or 2 or fewer layers, and may include resistive layers 176 with 2 or more layers and less than or equal to 100 layers. However, if the number of resistive layers 176 is too large, cracks or stress may occur in the second interlayer insulation layer 175 during dicing.

[0132] The resistance of the multiple second source electrodes 172_1, 172_2, and 172_3 can increase as they are positioned higher on the third-direction D3. For example, the resistance of the second second source electrode 172_2 can be greater than or equal to 10 times the resistance of the first second source electrode 172_1 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, greater than or equal to 90 times, greater than or equal to 100 times, greater than or equal to 200 times, greater than or equal to 300 times, greater than or equal to 400 times, greater than or equal to 5 ... 00 times, greater than or equal to 600 times, greater than or equal to 700 times, greater than or equal to 800 times, greater than or equal to 900 times, greater than or equal to 1000 times, greater than or equal to 2000 times, greater than or equal to 3000 times, greater than or equal to 4000 times, greater than or equal to 5000 times, greater than or equal to 6000 times, greater than or equal to 7000 times, greater than or equal to 8000 times, or greater than or equal to 9000 times), and less than or equal to the first and second source electrodes 172_1. 10,000 times the resistance (e.g., less than or equal to 9,000, 8,000, 7,000, 6,000, 5,000, 4,000, 3,000, 2,000, 1,000, 900, 800, 700, 600, 500, etc.). The resistance of the first and second source electrodes 172_1 is greater than or equal to 400 times, less than or equal to 300 times, less than or equal to 200 times, less than or equal to 100 times, less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times, and is greater than or equal to 10 times the resistance of the first and second source electrodes 172_1 and less than or equal to 10000 times the resistance of the first and second source electrodes 172_1.

[0133] Furthermore, the resistance of the third second source electrode 172_3 can be greater than or equal to 10 times the resistance of the second second source electrode 172_2 (for example, greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, greater than or equal to 90 times, greater than or equal to 100 times, greater than or equal to 200 times, greater than or equal to 300 times, greater than or equal to 400 times, greater than or equal to 5 ... 00 times, greater than or equal to 600 times, greater than or equal to 700 times, greater than or equal to 800 times, greater than or equal to 900 times, greater than or equal to 1000 times, greater than or equal to 2000 times, greater than or equal to 3000 times, greater than or equal to 4000 times, greater than or equal to 5000 times, greater than or equal to 6000 times, greater than or equal to 7000 times, greater than or equal to 8000 times, or greater than or equal to 9000 times), and less than or equal to the voltage of the second source electrode 172_2. 10,000 times the resistance (e.g., less than or equal to 9,000, 8,000, 7,000, 6,000, 5,000, 4,000, 3,000, 2,000, 1,000, 900, 800, 700, 600, 500, 500, etc.) 400 times, less than or equal to 300 times, less than or equal to 200 times, less than or equal to 100 times, less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and may be greater than or equal to 10 times the resistance of the second source electrode 172_2 and less than or equal to 10000 times the resistance of the second source electrode 172_2.

[0134] The resistance of the multiple resistive layers 176_1, 176_2, and 176_3 can increase as they are positioned higher on the third-direction D3. For example, the resistance of the second resistive layer 176_2 can be greater than or equal to 10 times the resistance of the first resistive layer 176_1 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, greater than or equal to 90 times, greater than or equal to 100 times, greater than or equal to 200 times, greater than or equal to 300 times, greater than or equal to 400 times, greater than or equal to 50 times). 0 times, greater than or equal to 600 times, greater than or equal to 700 times, greater than or equal to 800 times, greater than or equal to 900 times, greater than or equal to 1000 times, greater than or equal to 2000 times, greater than or equal to 3000 times, greater than or equal to 4000 times, greater than or equal to 5000 times, greater than or equal to 6000 times, greater than or equal to 7000 times, greater than or equal to 8000 times, or greater than or equal to 9000 times), and less than or equal to the resistance of the first resistive layer 176_1. 10,000 times (e.g., less than or equal to 9,000 times, less than or equal to 8,000 times, less than or equal to 7,000 times, less than or equal to 6,000 times, less than or equal to 5,000 times, less than or equal to 4,000 times, less than or equal to 3,000 times, less than or equal to 2,000 times, less than or equal to 1,000 times, less than or equal to 900 times, less than or equal to 800 times, less than or equal to 700 times, less than or equal to 600 times, less than or equal to 500 times, less than or equal to 10 ... (The resistance can be 400 times, less than or equal to 300 times, less than or equal to 200 times, less than or equal to 100 times, less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and can be greater than or equal to 10 times the resistance of the first resistance layer 176_1 and less than or equal to 10,000 times the resistance of the first resistance layer 176_1.

[0135] Furthermore, the resistance of the third resistive layer 176_3 can be greater than or equal to 10 times the resistance of the second resistive layer 176_2 (for example, greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, greater than or equal to 90 times, greater than or equal to 100 times, greater than or equal to 200 times, greater than or equal to 300 times, greater than or equal to 400 times, greater than or equal to 500 times). (The values ​​are: multiples of 600, 700, 800, 900, 1000, 2000, 3000, 4000, 5000, 6000, 7000, 8000, or 9000), and can be less than or equal to the electrical properties of the second resistive layer 176_2. 10,000 times the resistance (e.g., less than or equal to 9,000, 8,000, 7,000, 6,000, 5,000, 4,000, 3,000, 2,000, 1,000, 900, 800, 700, 600, 500, 600, 500, or less than 1000, 900, 800, 700, 600, 500, or less than 1000). (equal to 400 times, less than or equal to 300 times, less than or equal to 200 times, less than or equal to 100 times, less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and can be greater than or equal to 10 times the resistance of the second resistance layer 176_2 and less than or equal to 10,000 times the resistance of the second resistance layer 176_2.

[0136] For example, the first resistive layer 176_1 may have a resistance greater than that of the first source electrode 171, and the first second source electrode 172_1 may have a resistance greater than that of the first resistive layer 176_1. The second resistive layer 176_2 may have a resistance greater than that of the first second source electrode 172_1, and the second second source electrode 172_2 may have a resistance greater than that of the second resistive layer 176_2. The third resistive layer 176_3 may have a resistance greater than that of the second second source electrode 172_2, and the third second source electrode 172_3 may have a resistance greater than that of the third resistive layer 176_3.

[0137] For example, the resistance of the first resistive layer 176_1 can be greater than or equal to 10 times the resistance of the first source electrode 171 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, or greater than or equal to 90 times), and less than or equal to 100 times the resistance of the first source electrode 171 (e.g., less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and greater than or equal to 10 times the resistance of the first source electrode 171 and less than or equal to 100 times the resistance of the first source electrode 171.

[0138] Furthermore, the resistance of each of the second source electrodes 172_1, 172_2, and 172_3 can be greater than or equal to 10 times (e.g., greater than or equal to 20 times, 30 times, 40 times, 50 times, 60 times, 70 times, 80 times, or 90 times) the resistance of each of the resistive layers 176_1, 176_2, and 172_3 directly below the second source electrodes 172_1, 172_2, and 172_3 on the third-direction D3, and can be less than or equal to the resistance of each of the resistive layers 176_1, 176_2, and 176_3 directly below the second source electrodes 172_1, 172_2, and 172_3 on the third-direction D3. The resistance of each of the three layers 76_3 is 100 times (e.g., less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and may be greater than or equal to 10 times the resistance of each of the three layers 176_1, 176_2, 176_3 directly below the second source electrodes 172_1, 172_2, 172_3 on the third-party D3 and less than or equal to 100 times the resistance of each of the three layers 176_1, 176_2, 176_3 directly below the second source electrodes 172_1, 172_2, 172_3 on the third-party D3.

[0139] The source electrode 170 may also include a plurality of second interlayer insulating layers 175_1, 175_2, 175_3 and a plurality of third interlayer insulating layers 177_1, 177_2, 177_3.

[0140] The second interlayer insulating layers 175_1, 175_2, and 175_3 can respectively cover the side surfaces of the resistive layers 176_1, 176_2, and 176_3. Furthermore, the horizontal level of the upper surfaces of the second interlayer insulating layers 175_1, 175_2, and 175_3 in the third direction D3 can be the same as the horizontal level of the upper surfaces of the resistive layers 176_1, 176_2, and 176_3 in the third direction D3. In other words, the upper surfaces of the multiple layers of second interlayer insulating layers 175_1, 175_2, and 175_3 and the upper surfaces of the multiple layers of resistive layers 176_1, 176_2, and 176_3 can form coplanar surfaces. Therefore, the multiple layers of resistive layers 176_1, 176_2, and 176_3 can be located within the multiple layers of second interlayer insulating layers 175_1, 175_2, and 175_3.

[0141] For example, the first resistive layer 176_1 may be located within the first interlayer insulating layer 175_1, the second resistive layer 176_2 may be located within the second interlayer insulating layer 175_2, and the third resistive layer 176_3 may be located within the third interlayer insulating layer 175_3.

[0142] The third interlayer insulating layers 177_1, 177_2, and 177_3 can respectively cover the side surfaces of the second source electrodes 172_1, 172_2, and 172_3. Furthermore, the upper surfaces of the third interlayer insulating layers 177_1, 177_2, and 177_3 can be at the same level as the upper surfaces of the second source electrodes 172_1, 172_2, and 172_3 in the third direction D3. In other words, the upper surfaces of the third interlayer insulating layers 177_1, 177_2, and 177_3 and the upper surfaces of the second source electrodes 172_1, 172_2, and 172_3 can form coplanar surfaces. Therefore, the second source electrodes 172_1, 172_2, and 172_3 can be located within the third interlayer insulating layers 177_1, 177_2, and 177_3.

[0143] For example, the first second source electrode 172_1 can be located within the first third interlayer insulating layer 177_1, the second second source electrode 172_2 can be located within the second third interlayer insulating layer 177_2, and the third second source electrode 172_3 can be located within the third third interlayer insulating layer 177_3.

[0144] The third interlayer insulating layers 177_1, 177_2, and 177_3 may include insulating materials. For example, the third interlayer insulating layers 177_1, 177_2, and 177_3 may include SiO2. However, it is not limited to this, and the third interlayer insulating layers 177_1, 177_2, and 177_3 may include SiOP, SiN, SiON, or combinations thereof. The third interlayer insulating layers 177_1, 177_2, and 177_3 may each consist of a single layer or multiple layers.

[0145] For example, a semiconductor device can be manufactured by the following steps: forming a first conductivity type semiconductor layer 131 on the upper surface of a substrate 110; forming a second conductivity type doped well region 133 within the first conductivity type semiconductor layer 131; forming a gate insulating layer 151 and a gate electrode 150 on the first conductivity type semiconductor layer 131; forming a source electrode 170 on the second conductivity type doped well region 133; and forming a drain electrode 180 below the bottom surface of the substrate 110. The source electrode 170 can be formed by the following steps: forming a first source electrode 171 on the gate electrode 150; forming a first and second interlayer insulating layer 175_1 covering the first source electrode 171; etching the first and second interlayer insulating layer 175_1 to expose the first source electrode 171; forming a first resistive layer 176_1 inside the etched first and second interlayer insulating layer 175_1; forming a first and second interlayer insulating layer 175_1 and the first resistive layer 176_1; etching the first and third interlayer insulating layer 177_1 to expose the first resistive layer 176_1; forming a first and third interlayer insulating layer 177_1 inside the etched first and third interlayer insulating layer 177_1. The process involves: forming a first and second source electrode 172_1; forming a second second interlayer insulating layer 175_2 covering the first and second source electrode 172_1; etching the second second interlayer insulating layer 175_2 to expose the first and second source electrode 172_1; forming a second resistive layer 176_2 inside the etched second second interlayer insulating layer 175_2; forming a second and third interlayer insulating layer 177_2 on the second second interlayer insulating layer 175_2 and the second resistive layer 176_2; etching the second and third interlayer insulating layer 177_2 to expose the second resistive layer 176_2; and forming a second second source electrode 172_2 inside the etched second and third interlayer insulating layer 177_2.

[0146] Furthermore, the source electrode 170 can be further formed by the following steps: forming a third second interlayer insulating layer 175_3 covering the second second source electrode 172_2; etching the third second interlayer insulating layer 175_3 to expose the second second source electrode 172_2; forming a third resistive layer 176_3 inside the etched third second interlayer insulating layer 175_3; forming a third third interlayer insulating layer 177_3 on the third second interlayer insulating layer 175_3 and the third resistive layer 176_3; etching the third third interlayer insulating layer 177_3 to expose the third resistive layer 176_3; and forming a third second source electrode 172_3 inside the etched third third interlayer insulating layer 177_3. The resistance of the second source electrodes 172_1, 172_2, and 172_3 can increase as they are positioned higher on the third-direction D3. In addition, the resistance of resistive layers 176_1, 176_2, and 176_3 can increase as they are positioned higher on the third-direction D3.

[0147] Figure 6 This is a top view showing an example of a semiconductor device. Figure 7 It is along Figure 6 A cross-sectional view taken from line A-A'.

[0148] Figure 6 and Figure 7 The examples and diagrams shown are similar to Figure 1 and Figure 2 The examples and illustrations shown are substantially the same or similar, and repeated descriptions will be omitted; the differences will be explained primarily. Furthermore, the same reference numerals are used for the same parts.

[0149] Reference Figure 6 and Figure 7 The source electrode 170 may include a first source electrode 171, a second source electrode 172, and a third source electrode 173. The second source electrode 172 may be located on the first source electrode 171, and the third source electrode 173 may be located on the second source electrode 172.

[0150] The second source electrode 172 can be located between the first source electrode 171 and the third source electrode 173. In other words, the first source electrode 171, the second source electrode 172, and the third source electrode 173 can be stacked sequentially on the third direction D3.

[0151] The first source electrode 171 can be electrically connected to the third source electrode 173 through the second source electrode 172. In other words, the first source electrode 171 and the third source electrode 173 do not need to be in direct contact, and can be spaced apart from each other on the third direction D3, with the second source electrode 172 located between the first source electrode 171 and the third source electrode 173.

[0152] On a plane extending along the first direction D1 and the second direction D2 and perpendicular to the third direction D3 (e.g., in...) Figure 6 In the first direction D1 and the second direction D2, the second source electrode 172 may have a smaller area than the first source electrode 171. For example, the first source electrode 171 may partially overlap with the second source electrode 172 in the third direction D3, but the second source electrode 172 may completely overlap with the first source electrode 171 in the third direction D3.

[0153] The second source electrode 172 may have a resistance greater than that of the first source electrode 171. Additionally, the second source electrode 172 may have a resistance less than that of the third source electrode 173. For example, the resistance of the second source electrode 172 may be greater than or equal to 10 times the resistance of the first source electrode 171 (e.g., greater than or equal to 20 times, 30 times, 40 times, 50 times, 60 times, 70 times, 80 times, or 90 times), and less than or equal to 100 times the resistance of the first source electrode 171 (e.g., less than or equal to 90 times, 80 times, 70 times, 60 times, 50 times, 40 times, 30 times, or 20 times), and greater than or equal to 10 times the resistance of the first source electrode 171 and less than or equal to 100 times the resistance of the first source electrode 171.

[0154] For example, the resistivity of the second source electrode 172 can be greater than or equal to 10.0 × 10⁻⁶ at 0 °C. -8 Ω·m (e.g., greater than or equal to 20.0 × 10⁻⁶) -8 Ω·m, greater than or equal to 30.0 × 10 -8 Ω·m, greater than or equal to 40.0 × 10 -8 Ω·m, greater than or equal to 50.0 × 10 -8 Ω·m, greater than or equal to 60.0 × 10 -8 Ω·m, greater than or equal to 70.0 × 10 -8 Ω·m, greater than or equal to 80.0 × 10 -8 Ω·m, or greater than or equal to 90.0 × 10 -8 (Ω·m), and less than 100.0 × 10 -8 Ω·m (e.g., less than or equal to 90.0 × 10⁻⁶) -8 Ω·m, less than or equal to 80.0 × 10 -8 Ω·m, less than or equal to 70.0 × 10 -8 Ω·m, less than or equal to 60.0 × 10 -8Ω·m, less than or equal to 50.0 × 10 -8 Ω·m, less than or equal to 40.0 × 10 -8 Ω·m, less than or equal to 30.0 × 10 -8 Ω·m, or less than or equal to 20.0 × 10 -8 (Ω·m), and can be greater than 10.0×10 -8 Ω·m and less than 100.0×10 -8 Ω·m.

[0155] For example, the second source electrode 172 may include, but is not limited to, a conductive material having a resistance (or resistivity) greater than that of the first source electrode 171. For example, the second source electrode 172 may include palladium (Pd), tin (Sn), tantalum (Ta), chromium (Cr), strontium (Sr), antimony (Sb), zirconium (Zr), rubidium (Rb), manganese (Mn), polycrystalline silicon, tantalum carbonitride (TaCN), tantalum carbide (TaC), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), tantalum aluminum nitride (TaAlN), or combinations thereof, and may consist of a single layer or multiple layers.

[0156] For example, when the second source electrode 172 comprises polycrystalline silicon, the resistivity of the polycrystalline silicon can be controlled to be greater than 10.0 × 10⁻⁶ at 0 °C, depending on the type and concentration of the dopant elements. -8 Ω·m and less than 100.0×10 -8 Ω·m.

[0157] For example, the thickness of the second source electrode 172 can be greater than or equal to 10 nm (e.g., greater than or equal to 20 nm, greater than or equal to 30 nm, greater than or equal to 40 nm, greater than or equal to 50 nm, greater than or equal to 60 nm, greater than or equal to 70 nm, greater than or equal to 80 nm, greater than or equal to 90 nm, greater than or equal to 100 nm, greater than or equal to 200 nm, greater than or equal to 300 nm, greater than or equal to 400 nm, greater than or equal to 500 nm, greater than or equal to 600 nm, greater than or equal to 700 nm, greater than or equal to 800 nm, greater than or equal to 900 nm, greater than or equal to 1 μm, greater than or equal to 2 μm, greater than or equal to 3 μm, greater than or equal to 4 μm, greater than or equal to 5 μm, greater than or equal to 6 μm, greater than or equal to 7 μm, greater than or equal to 8 μm, or greater than or equal to 9 μm), and can be less than or equal to 10 μm (e.g., less than or equal to 9 μm, less than or equal to 8 μm, less than or equal to 7 μm). μm, less than or equal to 6 μm, less than or equal to 5 μm, less than or equal to 4 μm, less than or equal to 3 μm, less than or equal to 2 μm, less than or equal to 1 μm, less than or equal to 900 nm, less than or equal to 800 nm, less than or equal to 700 nm, less than or equal to 600 nm, less than or equal to 500 nm, less than or equal to 400 nm, less than or equal to 300 nm, less than or equal to 200 nm, less than or equal to 100 nm, less than or equal to 90 nm, less than or equal to 80 nm, less than or equal to 70 nm, less than or equal to 60 nm, less than or equal to 50 nm, less than or equal to 40 nm, less than or equal to 30 nm, or less than or equal to 20 nm), and can be greater than or equal to 10 nm and less than or equal to 10 μm. Here, in a section cut along the first direction D1 and the third direction D3 and perpendicular to the second direction D2 (e.g., Figure 7 In the second source electrode 172, the thickness can be the shortest distance from the bottom surface to the top surface of the second source electrode 172 in the third direction D3.

[0158] The third source electrode 173 can be located on the second source electrode 172.

[0159] For example, the third source electrode 173 may be located on the central portion of the upper surface of the first source electrode 171. The third source electrode 173 is electrically connected to the first source electrode 171 through the second source electrode 172, and an externally supplied source voltage may be applied to the second source electrode 172 and the first source electrode 171 through the third source electrode 173.

[0160] On a plane (e.g., in) Figure 6In the first direction D1 and the second direction D2, the third source electrode 173 may have a smaller area than the first source electrode 171. For example, the first source electrode 171 may partially overlap with the third source electrode 173 in the third direction D3, but the third source electrode 173 may completely overlap with the first source electrode 171 in the third direction D3.

[0161] On a plane (e.g., in) Figure 6 In the middle, the area of ​​the second source electrode 172 in the first direction D1 and the second direction D2 can be smaller, larger, or the same as the area of ​​the third source electrode 173. In addition, the second source electrode 172 and the third source electrode 173 can only partially overlap each other in the third direction D3.

[0162] The third source electrode 173 may have a higher resistance than the second source electrode 172.

[0163] For example, the resistance of the third source electrode 173 may be greater than or equal to 10 times the resistance of the second source electrode 172 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, or greater than or equal to 90 times), and less than or equal to 100 times the resistance of the second source electrode 172 (e.g., less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and greater than or equal to 10 times the resistance of the second source electrode 172 and less than or equal to 100 times the resistance of the second source electrode 172.

[0164] For example, the resistivity of the third source electrode 173 can be greater than or equal to 100.0 × 10⁻⁶ at 0 °C. -8 Ω·m (e.g., greater than or equal to 200.0 × 10⁻⁶) -8 Ω·m, greater than or equal to 300.0 × 10 -8 Ω·m, greater than or equal to 400.0 × 10 -8 Ω·m, greater than or equal to 500.0 × 10 -8 Ω·m, greater than or equal to 600.0 × 10 -8 Ω·m, greater than or equal to 700.0 × 10 -8 Ω·m, greater than or equal to 800.0 × 10 -8 Ω·m, or greater than or equal to 900.0 × 10 -8 (Ω·m), and less than or equal to 1000.0 × 10 -8 Ω·m (e.g., less than or equal to 900.0 × 10⁻⁶)-8 Ω·m, less than or equal to 800.0 × 10 -8 Ω·m, less than or equal to 700.0 × 10 -8 Ω·m, less than or equal to 600.0 × 10 -8 Ω·m, less than or equal to 500.0 × 10 -8 Ω·m, less than or equal to 400.0 × 10 -8 Ω·m, less than or equal to 300.0 × 10 -8 Ω·m, or less than or equal to 200.0 × 10 -8 (Ω·m), and can be greater than or equal to 100.0 × 10 -8 Ω·m and less than or equal to 1000.0 × 10 -8 Ω·m.

[0165] For example, the third source electrode 173 may be, but is not limited to, a material having a higher resistance than the second source electrode 172. For example, the third source electrode 173 may include palladium (Pd), tin (Sn), tantalum (Ta), chromium (Cr), strontium (Sr), antimony (Sb), zirconium (Zr), rubidium (Rb), manganese (Mn), polycrystalline silicon, tantalum carbonitride (TaCN), tantalum carbide (TaC), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), tantalum aluminum nitride (TaAlN), or combinations thereof, and may consist of a single layer or multiple layers.

[0166] For example, the thickness of the third source electrode 173 can be greater than or equal to 10 nm (e.g., greater than or equal to 20 nm, greater than or equal to 30 nm, greater than or equal to 40 nm, greater than or equal to 50 nm, greater than or equal to 60 nm, greater than or equal to 70 nm, greater than or equal to 80 nm, greater than or equal to 90 nm, greater than or equal to 100 nm, greater than or equal to 200 nm, greater than or equal to 300 nm, greater than or equal to 400 nm, greater than or equal to 500 nm, greater than or equal to 600 nm, greater than or equal to 700 nm, greater than or equal to 800 nm, greater than or equal to 900 nm, greater than or equal to 1 μm, greater than or equal to 2 μm, greater than or equal to 3 μm, greater than or equal to 4 μm, greater than or equal to 5 μm, greater than or equal to 6 μm, greater than or equal to 7 μm, greater than or equal to 8 μm, or greater than or equal to 9 μm), and can be less than or equal to 10 μm (e.g., less than or equal to 9 μm, less than or equal to 8 μm, less than or equal to 7 μm). μm, less than or equal to 6 μm, less than or equal to 5 μm, less than or equal to 4 μm, less than or equal to 3 μm, less than or equal to 2 μm, less than or equal to 1 μm, less than or equal to 900 nm, less than or equal to 800 nm, less than or equal to 700 nm, less than or equal to 600 nm, less than or equal to 500 nm, less than or equal to 400 nm, less than or equal to 300 nm, less than or equal to 200 nm, less than or equal to 100 nm, less than or equal to 90 nm, less than or equal to 80 nm, less than or equal to 70 nm, less than or equal to 60 nm, less than or equal to 50 nm, less than or equal to 40 nm, less than or equal to 30 nm, or less than or equal to 20 nm), and can be greater than or equal to 10 nm and less than or equal to 10 μm. Here, in a section cut along the first direction D1 and the third direction D3 and perpendicular to the second direction D2 (e.g., Figure 7 In the third source electrode 173, the thickness can be the shortest distance from the bottom surface to the top surface of the third source electrode 173 in the third direction D3.

[0167] The second interlayer insulating layer 175 may be located on the first source electrode 171. The second interlayer insulating layer 175 may cover the upper surface of the first source electrode 171. In addition, the second interlayer insulating layer 175 may cover the side surface of the second source electrode 172.

[0168] For example, the second interlayer insulating layer 175 may be located between the first source electrode 171 and the third source electrode 173. The first source electrode 171 and the third source electrode 173 may be spaced apart from each other by the second interlayer insulating layer 175, and the first source electrode 171 and the third source electrode 173 may be electrically connected to each other by the second source electrode 172.

[0169] The upper surface of the second interlayer insulating layer 175 can be at the same level as the upper surface of the second source electrode 172 in the third direction D3. For example, the upper surface of the second interlayer insulating layer 175 and the upper surface of the second source electrode 172 can form a coplanar surface. The second source electrode 172 can be located within the second interlayer insulating layer 175, and the third source electrode 173 can be located on the second interlayer insulating layer 175.

[0170] like Figure 6 and Figure 7 As shown, the semiconductor device may include a second source electrode 172 and a third source electrode 173, and its resistance increases upward in the third direction D3 from the active source contact region where the source electrode 170 contacts the second conductivity type doped well region 133.

[0171] Based on this, such as Figure 3 As shown in the circuit diagram, the gate pad 155 on the gate G side is in direct contact with the metal, but current from the source S side is supplied through the second source electrode 172 and the third source electrode 173, which have high resistance. In this way, if the local resistance in the current path on the source S side increases, a large current flows due to the ballast resistor principle, and the potential difference between the gate G and the source S decreases due to the voltage drop. When the potential difference between the gate G and the source S decreases, the channel closes, and the current is limited to prevent short circuits.

[0172] Therefore, by reducing Id sat Without having to change Rd son Furthermore, it is not necessary to change the structure of the active source contact area (such as changing the channel length) without adding additional resistance outside the circuit (e.g., package or module) to prevent or reduce short circuits.

[0173] Furthermore, the second source electrode 172 and the third source electrode 173 located on the first source electrode 171 have relatively high resistance, and the first source electrode 171 located below the source electrode 170 and forming an active source contact has relatively low resistance. Compared with the area of ​​the second source electrode 172 and the third source electrode 173, the area of ​​the first source electrode 171 is relatively wide, which makes it possible to reduce the current density of the active source contact and improve the current spread by reducing the voltage overshoot or source current non-uniformity caused by the cell location.

[0174] For example, a semiconductor device can be manufactured by the following steps: forming a first conductivity type semiconductor layer 131 on the upper surface of a substrate 110; forming a second conductivity type doped well region 133 within the first conductivity type semiconductor layer 131; forming a gate insulating layer 151 and a gate electrode 150 on the first conductivity type semiconductor layer 131; forming a source electrode 170 on the second conductivity type doped well region 133; and forming a drain electrode 180 below the bottom surface of the substrate 110. The source electrode 170 is formed by the following steps: forming a first source electrode 171 on the gate electrode 150; forming a second source electrode 172 on the first source electrode 171; and forming a third source electrode 173 on the second source electrode 172. The second source electrode 172 may have a resistance greater than that of the first source electrode 171, and the third source electrode 173 may have a resistance greater than that of the second source electrode 172.

[0175] For example, the source electrode 170 can be formed by the following steps: forming a first source electrode 171 on the gate electrode 150; forming a second interlayer insulating layer 175 covering the first source electrode 171; etching the second interlayer insulating layer 175 to expose the first source electrode 171; forming a second source electrode 172 within the etched second interlayer insulating layer 175; and forming a third source electrode 173 on the second interlayer insulating layer 175 and the second source electrode 172.

[0176] Figure 8 This is a top view showing an example of a semiconductor device. Figure 9 It is along Figure 8 A cross-sectional view taken from line A-A'.

[0177] Figure 8 and Figure 9 The examples and diagrams shown are similar to Figure 1 and Figure 2 The examples and illustrations shown are substantially the same or similar, and repeated descriptions will be omitted; the differences will be explained primarily. Furthermore, the same reference numerals are used for the same parts.

[0178] Reference Figure 8 and Figure 9 On a plane extending along the first direction D1 and the second direction D2 and perpendicular to the third direction D3 (e.g., in Figure 8 Compared to the area of ​​the first source electrode 171, the second source electrode 172 may have a larger area or the same area in the first direction D1 and the second direction D2. For example, the second source electrode 172 may partially or completely overlap with the first source electrode 171 in the third direction D3.

[0179] Additionally, the second source electrode 172 can cover the cell region CELL. On a plane (e.g., in...) Figure 8In the first direction D1 and the second direction D2, the second source electrode 172 may have an area larger than that of the cell region CELL. For example, the second source electrode 172 may partially overlap with the cell region CELL in the third direction D3, but the cell region CELL may completely overlap with the second source electrode 172 in the third direction D3.

[0180] The resistive layer 176 may be located between the first source electrode 171 and the second source electrode 172, and multiple resistive layers 176 may be interposed between the first source electrode 171 and the second source electrode 172. For example, multiple resistive layers 176 may be spaced apart in the first direction D1 or the second direction D2 within the second interlayer insulating layer 175.

[0181] In this way, if the second source electrode 172 and the first source electrode 171 have similar areas in the first direction D1 and the second direction D2, and the resistive layer 176 is located (e.g., only located) at the connection portion between the second source electrode 172 and the first source electrode 171, the current spread from the second source electrode 172 can be improved.

[0182] Figure 10 This is a top view showing an example of a semiconductor device. Figure 11 It is along Figure 10 A cross-sectional view taken from line A-A'.

[0183] Figure 10 and Figure 11 The examples and diagrams shown are similar to Figure 8 and Figure 9 The examples and illustrations shown are substantially the same or similar, and repeated descriptions will be omitted; the differences will be explained primarily. Furthermore, the same reference numerals are used for the same parts.

[0184] For reference Figure 1 and Figure 2 Description Figure 8 and Figure 9 This illustrates a case where the second source electrode 172 has a resistance greater than that of the resistive layer 176. Figure 10 and Figure 11 This illustrates the case where the resistance of the second source electrode 172 is greater than or equal to the resistance of the resistive layer 176.

[0185] Reference Figure 10 and Figure 11The resistive layer 176 and the second source electrode 172 may have a resistance greater than that of the first source electrode 171. For example, the resistance of the resistive layer 176 and the second source electrode 172 may be greater than or equal to 10 times the resistance of the first source electrode 171 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, or greater than or equal to 90 times), and less than or equal to 100 times the resistance of the first source electrode 171 (e.g., less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and greater than or equal to 10 times the resistance of the first source electrode 171 and less than or equal to 100 times the resistance of the first source electrode 171.

[0186] The resistance of the second source electrode 172 can be the same as the resistance of the resistive layer 176, or it can be greater than or equal to 10 times the resistance of the resistive layer 176 (e.g., greater than or equal to 20 times, greater than or equal to 30 times, greater than or equal to 40 times, greater than or equal to 50 times, greater than or equal to 60 times, greater than or equal to 70 times, greater than or equal to 80 times, or greater than or equal to 90 times), and less than or equal to 100 times the resistance of the resistive layer 176 (e.g., less than or equal to 90 times, less than or equal to 80 times, less than or equal to 70 times, less than or equal to 60 times, less than or equal to 50 times, less than or equal to 40 times, less than or equal to 30 times, or less than or equal to 20 times), and greater than or equal to 10 times the resistance of the resistive layer 176 and less than or equal to 100 times the resistance of the resistive layer 176.

[0187] The resistivity of the second source electrode 172 and the resistive layer 176 can be greater than 10.0 × 10⁻⁶ at 0 °C. -8 Ω·m (e.g., greater than or equal to 20.0 × 10⁻⁶) -8 Ω·m, greater than or equal to 30.0 × 10 -8 Ω·m, greater than or equal to 40.0 × 10 -8 Ω·m, greater than or equal to 50.0 × 10 -8 Ω·m, greater than or equal to 60.0 × 10 -8 Ω·m, greater than or equal to 70.0 × 10 -8 Ω·m, greater than or equal to 80.0 × 10 -8 Ω·m, or greater than or equal to 90.0 × 10 -8 (Ω·m), and less than or equal to 100.0 × 10 -8 Ω·m (e.g., less than or equal to 90.0 × 10⁻⁶) -8Ω·m, less than or equal to 80.0 × 10 -8 Ω·m, less than or equal to 70.0 × 10 -8 Ω·m, less than or equal to 60.0 × 10 -8 Ω·m, less than or equal to 50.0 × 10 -8 Ω·m, less than or equal to 40.0 × 10 -8 Ω·m, less than or equal to 30.0 × 10 -8 Ω·m, or less than or equal to 20.0 × 10 -8 (Ω·m), and can be greater than 10.0×10 -8 Ω·m and less than or equal to 100.0 × 10 -8 Ω·m.

[0188] For example, the second source electrode 172 may be, but is not limited to, a material having a resistance greater than that of the first source electrode 171. For example, the second source electrode 172 may include palladium (Pd), tin (Sn), tantalum (Ta), chromium (Cr), strontium (Sr), antimony (Sb), zirconium (Zr), rubidium (Rb), manganese (Mn), polycrystalline silicon, tantalum carbonitride (TaCN), tantalum carbide (TaC), tantalum nitride (TaN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), tantalum aluminum nitride (TaAlN), or combinations thereof, and may consist of a single layer or multiple layers.

[0189] For example, the source electrode 170 can be formed by the following steps: forming a first source electrode 171 on the gate electrode 150; forming a second interlayer insulating layer 175 covering the first source electrode 171; etching the second interlayer insulating layer 175 to expose a portion of the first source electrode 171; and simultaneously forming a second source electrode 172 on the upper surface of the second interlayer insulating layer 175 while forming a resistive layer 176 inside the etched second interlayer insulating layer 175. By doing so, the process can be shortened by reducing the number of masks used in the process.

[0190] Figure 12 This is a top view showing an example of a semiconductor device. Figure 13 It is along Figure 12 A cross-sectional view taken from line A-A'.

[0191] Figure 12 and Figure 13 The examples and diagrams shown are similar to Figure 1 and Figure 2 The examples and illustrations shown are substantially the same or similar, and repeated descriptions will be omitted; the differences will be explained primarily. Furthermore, the same reference numerals are used for the same parts.

[0192] Reference Figure 12 and Figure 13 The second source electrode 172 is located on the first source electrode 171. However, as shown in the example... Figure 1 and Figure 2 Unlike the diagram, the resistive layer 176 is not located between the first source electrode 171 and the second source electrode 172. In other words, the first source electrode 171 and the second source electrode 172 can be sequentially stacked on the third direction D3.

[0193] For example, the bottom surface of the second source electrode 172 can be in direct contact with the upper surface of the first source electrode 171. However, the arrangement is not limited to this, and in some embodiments, the barrier layer 178 can be located between the first source electrode 171 and the second source electrode 172. For example, the first source electrode 171, the barrier layer 178, and the second source electrode 172 can be sequentially stacked on a third direction D3.

[0194] When the second interlayer insulating layer 175 and the resistive layer 176 are not located between the first source electrode 171 and the second source electrode 172, the barrier layer 178 can prevent the metal materials of the first source electrode 171 and the second source electrode 172 from mixing.

[0195] For example, barrier layer 178 may include titanium (Ti), titanium nitride (TiN), titanium-tungsten (Ti-W), platinum (Pt), chromium (Cr), or combinations thereof, such as titanium (Ti), titanium nitride (TiN), or titanium-tungsten (Ti-W). Barrier layer 178 may consist of a single layer or multiple layers.

[0196] For example, the thickness of the barrier layer 178 can be greater than or equal to 100 nm (e.g., greater than or equal to 1 μm, greater than or equal to 2 μm, greater than or equal to 3 μm, greater than or equal to 4 μm, greater than or equal to 5 μm, greater than or equal to 6 μm, greater than or equal to 7 μm, greater than or equal to 8 μm, or greater than or equal to 9 μm), and can be less than or equal to 10 μm (e.g., less than or equal to 9 μm, less than or equal to 8 μm, less than or equal to 7 μm, less than or equal to 6 μm, less than or equal to 5 μm, less than or equal to 4 μm, less than or equal to 3 μm, less than or equal to 2 μm, or less than or equal to 1 μm), and can be greater than or equal to 100 nm and less than or equal to 10 μm, or greater than or equal to 100 nm and less than or equal to 3 μm.

[0197] For example, a semiconductor device can be manufactured by the following steps: forming a first conductivity type semiconductor layer 131 on the upper surface of a substrate 110; forming a second conductivity type doped well region 133 within the first conductivity type semiconductor layer 131; forming a gate insulating layer 151 and a gate electrode 150 on the first conductivity type semiconductor layer 131; forming a source electrode 170 on the second conductivity type doped well region 133; and forming a drain electrode 180 below the bottom surface of the substrate 110. The source electrode 170 can be formed by the following steps: forming a first source electrode 171 on the gate electrode 150; forming a barrier layer 178 covering the first source electrode 171; and forming a second source electrode 172 on the barrier layer 178.

[0198] Figure 14 It is shown that... Figure 13 A cross-sectional view of an example of a corresponding semiconductor device. Figure 14 The examples shown in the text are similar to Figure 13 The examples shown are substantially the same or similar, and repeated descriptions will be omitted; the differences will be explained primarily. Additionally, the same reference numerals are used for the same parts.

[0199] Reference Figure 14 The second source electrode 172 may be located within the first source electrode 171. For example, the first source electrode 171 may cover the side portion of the second source electrode 172. The upper surface of the second source electrode 172 may be at the same level as the upper surface of the first source electrode 171 in the third direction D3. The second source electrode 172 may be located within the first source electrode 171.

[0200] For example, the bottom and side surfaces of the second source electrode 172 can be covered by the first source electrode 171, and the bottom and side surfaces of the second source electrode 172 can be in direct contact with the first source electrode 171. However, the construction is not limited to this, and in some embodiments, the barrier layer 178 can be located between the first source electrode 171 and the second source electrode 172. In this case, the barrier layer 178 can be located between the bottom surface of the second source electrode 172 and the first source electrode 171, and also between the side surface of the second source electrode 172 and the first source electrode 171.

[0201] For example, the source electrode 170 can be formed by the following steps: forming a first source electrode 171 on the gate electrode 150; etching the first source electrode 171; forming a barrier layer 178 inside the etched first source electrode 171; and forming a second source electrode 172 inside the first source electrode 171.

[0202] Although this disclosure contains numerous details of specific implementations, these should not be construed as limiting the scope of claims. Specific features described in the context of individual implementations in this disclosure may also be implemented in combination in a single implementation. Conversely, various features described in the context of a single implementation may also be implemented individually or in any suitable sub-combination in multiple implementations. Furthermore, although features may be described above as functioning in a particular combination, one or more features from a combination may be removed from the combination in some cases, and the combination may be used for sub-combinations or variations thereof.

[0203] Although examples have been described in detail above, the scope of this disclosure is not limited thereto, and various modifications and improvements made by those skilled in the art also fall within the scope of this disclosure.

Claims

1. A semiconductor device, comprising: Substrate; A first conductivity type semiconductor layer is located on the upper surface of the substrate; A second conductivity type doped well region is located within the first conductivity type semiconductor layer; A gate electrode, which is located on the semiconductor layer of the first conductivity type; A gate insulating layer is located between the first conductivity type semiconductor layer and the gate electrode; The source electrode is located on the doped well region of the second conductivity type; as well as The drain electrode is located below the lower surface of the substrate. The source electrode includes: A first source electrode, located on the gate electrode, includes a first conductive material. The second source electrode is located on top of the first source electrode, and A resistive layer is located between the first source electrode and the second source electrode, wherein the resistive layer includes a second conductive material, the resistivity of the second conductive material being greater than the resistivity of the first conductive material.

2. The semiconductor device according to claim 1, wherein, The resistance of the resistive layer is greater than or equal to 10 times the resistance of the first source electrode, and Wherein, the resistance of the second source electrode is greater than or equal to 10 times the resistance of the resistive layer.

3. The semiconductor device according to claim 1, wherein: The resistivity of the first source electrode is greater than or equal to 1.0 × 10⁻⁶ at 0°C. -8 Ω·m and less than or equal to 10.0 × 10 -8 Ω·m, The resistivity of the resistive layer is greater than 10.0 × 10⁻⁶ at 0°C. -8 Ω·m and less than 100.0×10 -8 Ω·m, and The resistivity of the second source electrode is greater than or equal to 100.0 × 10⁻⁶ at 0°C. -8 Ω·m and less than or equal to 1000.0 × 10 -8 Ω·m.

4. The semiconductor device according to claim 1, wherein: The second source electrode has a smaller lateral area than the first source electrode. The resistive layer has a smaller lateral area than the lateral area of ​​the first source electrode. The second source electrode completely overlaps with the first source electrode along the vertical direction. The resistive layer completely overlaps with the first source electrode along the vertical direction. The first source electrode overlaps with each portion of the second source electrode and the resistive layer along the vertical direction, and The second source electrode and the resistive layer partially overlap each other along the vertical direction.

5. The semiconductor device of claim 1, further comprising a second interlayer insulating layer on the first source electrode. in, The second interlayer insulating layer covers the upper surface of the first source electrode and the side surface of the resistive layer. Wherein, the vertical horizontal plane of the upper surface of the second interlayer insulating layer is the same as the vertical horizontal plane of the upper surface of the resistive layer. The resistive layer is located within the second interlayer insulating layer, and The second source electrode is located on the second interlayer insulating layer.

6. The semiconductor device of claim 1, further comprising a second interlayer insulating layer on the first source electrode. in, The second interlayer insulating layer covers the upper surface of the first source electrode, the upper and side surfaces of the resistive layer, and the side surface of the second source electrode. Wherein, the vertical horizontal plane of the upper surface of the second interlayer insulating layer is the same as the vertical horizontal plane of the upper surface of the second source electrode, and The resistive layer and the second source electrode are located within the second interlayer insulating layer.

7. The semiconductor device according to claim 1, wherein: The source electrode includes a plurality of second source electrodes and a plurality of resistive layers, wherein the plurality of second source electrodes includes the second source electrodes, and wherein the plurality of resistive layers includes the resistive layers. The plurality of second source electrodes and the plurality of resistive layers are stacked alternately along the vertical direction. The resistance of the plurality of second source electrodes increases with increasing height along the vertical direction, and The resistance of each of the plurality of resistive layers increases with increasing height along the vertical direction.

8. The semiconductor device according to claim 7, wherein, The plurality of second source electrodes comprises at least two layers along the vertical direction, and includes no more than 100 layers of the plurality of second source electrodes. The plurality of resistive layers includes at least two layers along the vertical direction, and includes the plurality of resistive layers with fewer than or equal to 100 layers.

9. A semiconductor device, comprising: Substrate; A first conductivity type semiconductor layer is located on the upper surface of the substrate; A second conductivity type doped well region is located within the first conductivity type semiconductor layer; A gate electrode, which is located on the semiconductor layer of the first conductivity type; A gate insulating layer is located between the first conductivity type semiconductor layer and the gate electrode; The source electrode is located on the doped well region of the second conductivity type; as well as The drain electrode is located below the lower surface of the substrate. The source electrode includes: The first source electrode is located on the gate electrode. The second source electrode is located on top of the first source electrode, and The third source electrode is located on top of the second source electrode. Wherein, the resistance of the second source electrode is greater than the resistance of the first source electrode, and The resistance of the third source electrode is greater than that of the second source electrode.

10. The semiconductor device according to claim 9, wherein: The resistance of the second source electrode is greater than or equal to 10 times the resistance of the first source electrode, and The resistance of the third source electrode is greater than or equal to 10 times the resistance of the second source electrode.

11. The semiconductor device according to claim 10, wherein: The resistivity of the first source electrode is greater than or equal to 1.0 × 10⁻⁶ at 0 °C. -8 Ω·m and less than or equal to 10.0 × 10 -8 Ω·m, The resistivity of the second source electrode is greater than 10.0 × 10⁻⁶ at 0 °C. -8 Ω·m and less than 100.0×10 -8 Ω·m, and The resistivity of the third source electrode is greater than or equal to 100.0 × 10⁻⁶ at 0 °C. -8 Ω·m and less than or equal to 1000.0 × 10 -8 Ω·m.

12. The semiconductor device according to claim 9, wherein: The second source electrode has a smaller lateral area than the first source electrode. The third source electrode has a smaller lateral area than the first source electrode. The second source electrode completely overlaps with the first source electrode in the vertical direction. The third source electrode completely overlaps with the first source electrode along the vertical direction. The first source electrode overlaps partially with each of the second and third source electrodes along the vertical direction, and The second source electrode and the third source electrode partially overlap each other along the vertical direction.

13. A semiconductor device, comprising: The substrate includes a cell region and a peripheral region located outside the cell region; A first conductivity type semiconductor layer is located on the upper surface of the substrate; A second conductivity type doped well region is located within the first conductivity type semiconductor layer; A gate electrode, which is located on the semiconductor layer of the first conductivity type; A gate insulating layer is located between the first conductivity type semiconductor layer and the gate electrode; The source electrode is located on the doped well region of the second conductivity type; as well as The drain electrode is located below the lower surface of the substrate. The source electrode includes: The first source electrode is located on the gate electrode, and A second source electrode is located on top of the first source electrode, wherein the resistance of the second source electrode is greater than the resistance of the first source electrode.

14. The semiconductor device according to claim 13, wherein, The source electrode includes: A resistive layer is located between the first source electrode and the second source electrode, wherein the resistive layer comprises a conductive material having a resistivity greater than that of the conductive material of the first source electrode, and Wherein, the resistance of the second source electrode is greater than or equal to the resistance of the resistive layer.

15. The semiconductor device according to claim 14, wherein, The resistance of the resistive layer and the resistance of the second source electrode are each greater than or equal to 10 times the resistance of the first source electrode.

16. The semiconductor device according to claim 15, wherein: The resistivity of the first source electrode is greater than or equal to 1.0 × 10⁻⁶ at 0 °C. -8 Ω·m and less than or equal to 10.0 × 10 -8 Ω·m, and The resistivity of the resistive layer and the resistivity of the second source electrode are each greater than 10.0 × 10⁻⁶ at 0 °C. -8 Ω·m and less than or equal to 100.0 × 10 -8 Ω·m.

17. The semiconductor device of claim 14, wherein: The first source electrode has a lateral area larger than the lateral area of ​​the unit region. The second source electrode has a lateral area smaller than at least one of the lateral areas of the first source electrode and the lateral area of ​​the unit region. The resistive layer has a lateral area smaller than at least one of the lateral areas of the first source electrode and the second source electrode. The resistive layer completely overlaps with the second source electrode in the vertical direction, and The second source electrode partially overlaps with the resistive layer along the vertical direction.

18. The semiconductor device according to claim 13, wherein, The source electrode includes a barrier layer located between the first source electrode and the second source electrode.

19. The semiconductor device according to claim 18, wherein, The barrier layer comprises titanium (Ti), titanium nitride (TiN), titanium tungsten (Ti-W), platinum (pt), chromium (Cr), or a combination thereof.

20. The semiconductor device according to claim 13, wherein: The first source electrode covers the side surface of the second source electrode. The vertical horizontal plane of the upper surface of the first source electrode is the same as the vertical horizontal plane of the upper surface of the second source electrode, and The second source electrode is located inside the first source electrode.

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