Wafer irradiation platform

Abstract

The application relates to the technical field of semiconductor processing, and in particular relates to a wafer irradiation platform, which comprises a rotating platform, a rotating base, a rotating driving part and a pitch adjustment assembly. The rotating driving part drives the rotating platform to rotate relative to the rotating base, and the rotating axis is L1. A plurality of wafer loading parts for fixing wafers are installed in the rotating platform. The wafer loading parts are rotatably installed on the rotating platform, the rotating axis is L2, and L1 is perpendicular to L2. The pitch adjustment assembly drives the wafer loading parts to change the pitch angle around the axis L2 when the rotating platform rotates. The wafer irradiation platform can adjust the pitch angle of the wafer, introduces the dimension of wafer angle change on the basis of the revolution of the wafer, and improves the uniformity of wafer processing. The pitch adjustment mechanism of the application synchronously adjusts a plurality of wafers, and the displacement of the wafers is small, so that the influence of the displacement (close to the radiation source and far from the radiation source) on the uniformity of wafer irradiation is avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a wafer irradiation platform. Background Technology

[0002] Large-scale gamma irradiation equipment in semiconductor processing typically uses radioactive isotope sources such as cobalt-60 to penetrate the wafer and generate ionization through interactions such as photoelectric effect and Compton scattering. This allows for precise control of the wafer's electrical properties (such as carrier lifetime control and resistivity homogenization), optical properties, or specific defect engineering.

[0003] However, achieving high-quality, highly repeatable irradiation modification faces a series of inherent challenges stemming from irradiation physics and system geometry. Industrial gamma irradiation sources typically consist of multiple rod-shaped radiation sources arranged in a non-uniform distribution of radioactivity, and within the irradiation chamber, geometric attenuation and shielding structures create complex flux fields. The scattering of gamma rays from the irradiation chamber walls, carrier, and other wafers creates an isotropic background radiation field, which, when superimposed on direct radiation, further disrupts the dose distribution. Even in an optimized, uniform radiation field, the fixed orientation of the wafer itself introduces a significant dose gradient.

[0004] Therefore, in existing technologies, during the irradiation process, the wafer mounting platform needs to rotate, causing multiple wafers to revolve, and further introducing changes in the pitch angle. Existing technologies only exist for pitch changes on a single wafer, but this is not suitable for irradiation systems that process multiple wafers simultaneously. Summary of the Invention

[0005] To address the aforementioned problems in the prior art, the present invention provides a wafer irradiation platform, comprising: a rotating platform, a rotating base, a rotating drive, a pitch adjustment assembly, and a control unit; The rotary drive component drives the rotary platform to rotate relative to the rotary base, with the rotation axis being L1; The rotating platform is equipped with multiple wafer loading components for fixing wafers; The wafer loader is rotatably mounted on the rotating platform, with the rotation axis being L2, and L1 being perpendicular to L2; The pitch adjustment component drives the wafer loading component to change its pitch angle around axis L2 when the rotating platform rotates.

[0006] Furthermore, the wafer loader is hingedly mounted in the rotating platform with the hinge axis being L2; the wafer loader is arranged in X circles around L1, with each circle containing a set of wafer loaders. The pitch adjustment assembly has at least a plurality of axial drive components and X axial slip rings, wherein the axial slip rings are slidably connected to the rotating platform along L1 and rotate synchronously with the rotating platform; The plurality of axial drive components respectively drive the axial slip ring to slide; In each group, the edge ends of multiple wafer loaders are connected to an axial slip ring, which drives the wafer loaders to rotate around axis L2.

[0007] Furthermore, the rotating platform is provided with multiple guide columns, and the axial slip ring is slidably connected to the guide columns; The wafer loader described in the group is connected to an axial slip ring via multiple first links; The two ends of the first connecting rod are respectively hinged to the wafer loading component and the axial slip ring, and the hinge axes are parallel to the axis L2.

[0008] Furthermore, the pitch adjustment assembly also includes a locking component, which applies a force N1 to the wafer loader, thereby locking the pitch angle of the wafer loader.

[0009] Furthermore, the locking component includes a first spring, one end of which is connected to the rotating platform and the other end of which is connected to the wafer loader.

[0010] Furthermore, the locking component also includes a magnetically attracted element and an electromagnet; The wafer loader described in the group is connected to a magnetically attracted component via multiple second links; The bottom of the rotating platform extends to form a cylindrical guide wall; The magnetically attracted component is sleeved on the cylindrical guide wall surface; The electromagnet is sleeved on the cylindrical guide wall, and the electromagnet is flexibly connected to the magnetically attracted component and has a fixed distance. The magnetically attracted component is far away from the rotating platform relative to the electromagnet. When the electromagnet is energized, it is fixed to the cylindrical guide wall and attracts the magnetically attracted component. When the electromagnet is de-energized, the magnetically attracted component can drive the electromagnet to rise synchronously.

[0011] Furthermore, the pitch adjustment component is configured to drive the wafer loader to switch stepwise between multiple discrete predetermined pitch angles, and at each predetermined pitch angle, the rotary platform completes at least one rotation.

[0012] Furthermore, the range of motion of the pitch angle of the wafer loader around axis L2 is within ±10 degrees.

[0013] Furthermore, the wafer loader includes: The carrier disk has a carrier surface for adsorbing and fixing the wafer; The hinge shaft is integrally formed or fixedly connected to the bearing disk body to form the axis L2; A wafer cooling channel is embedded inside the support disk and has a cooling medium inlet and a cooling medium outlet extending to the hinge shaft. The cooling medium inlet and cooling medium outlet are connected to the interior of the rotating platform; A flexible sealing ring is fitted between the hinge shaft and the shaft hole of the rotating platform to seal the rotary dynamic sealing interface at the inlet / outlet of the cooling medium.

[0014] Furthermore, it also includes a control unit, which is communicatively connected to the rotation drive and the pitch adjustment assembly, and is configured to: Requirements for receiving target irradiation dose and uniformity; Based on the target irradiation dose and uniformity requirements, a joint motion control program is generated and executed to coordinate the rotational motion of the rotating platform and the pitch angle change motion of the wafer loading device.

[0015] The beneficial effects of this invention are reflected in the fact that the wafer irradiation platform of this application can adjust the pitch angle of the wafer, introducing the dimension of wafer angle change on the basis of wafer revolution, thereby improving the uniformity of wafer processing. Furthermore, the pitch adjustment mechanism of this application simultaneously adjusts multiple wafers with minimal wafer displacement, avoiding the impact of displacement (closer to and farther from the radiation source) on the uniformity of wafer irradiation. Attached Figure Description

[0016] Figure 1 This is a three-dimensional structural schematic diagram of a wafer irradiation platform provided by the present invention; Figure 2 This is a top view of a wafer irradiation platform provided by the present invention; Figure 3 This is a schematic cross-sectional view of a wafer irradiation platform provided by the present invention. Figure 4 for Figure 3 Enlarged view of point a in the middle; Figure 5 This is a schematic diagram of the wafer loading device at different pitch angles; Figure 6 This is a three-dimensional structural diagram of the internal structure of a wafer irradiation platform provided by the present invention. Figure 7 This is a schematic diagram of a wafer cooling channel in a wafer irradiation platform provided by the present invention.

[0017] Reference numerals: 1. Rotating platform; 11. Wafer loading component; 111. Supporting disk; 112. Hinge shaft; 113. Wafer cooling channel; 1131. Cooling medium inlet; 1132. Cooling medium outlet; 12. Guide post; 13. Cylindrical guide wall; 2. Rotating base; 3. Rotation drive component; 4. Pitch adjustment assembly; 41. Axial drive component; 42. Axial slip ring; 421. First connecting rod; 43. Locking component; 431. First spring; 432. Magnetically attracted component; 4321. Second connecting rod; 433. Electromagnet. Detailed Implementation

[0018] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0019] Example 1 Reference Figure 1 - Figure 6 .

[0020] A wafer irradiation platform includes: a rotating platform 1, a rotating base 2, a rotating drive component 3, and a pitch adjustment component 4; The rotary drive 3 drives the rotary platform 1 to rotate relative to the rotary base 2, with the rotation axis being L1; The rotating platform 1 is equipped with a plurality of wafer loading components 11 for fixing wafers; The wafer loader 11 is rotatably mounted on the rotating platform 1, with the rotation axis being L2, and L1 being perpendicular to L2; When the rotating platform 1 rotates, the pitch adjustment component 4 drives the wafer loading component 11 to change the pitch angle around the axis L2.

[0021] During gamma irradiation, the wafer is first placed in a wafer loading device 11, which may be an electrostatic chuck, mechanical clamp, or other wafer fixing component. The wafer loading device 11 is fixed in a rotating platform 1, and a rotation drive 3 drives the rotating platform 1 to rotate, thus causing the wafer to revolve. This effectively averages out the non-uniformity of the radiation field in the rotational symmetry direction. However, this revolve only compensates for the non-uniformity of the radiation field in the horizontal plane, but cannot solve the angle-related path length differences and shadowing effects caused by a fixed pitch angle. A systematic gradient in the dose distribution may still exist in the wafer's radial direction. Therefore, there is an evaluation process for improving wafer uniformity. In this application, the dimension of wafer angle variation is introduced based on wafer revolve to improve the uniformity of wafer processing.

[0022] Specifically, in the wafer irradiation platform of this embodiment, the rotating platform 1 is rotatably mounted in the rotating base 2. The rotating drive 3, i.e., the motor, preferably a servo motor, has its output shaft rigidly connected to the rotating platform 1. The rotation axis is L1, and its rotation center coincides with the L1 axis to ensure the stability of the geometric reference of the revolution motion. Multiple wafer loading components 11 are arranged in the rotating platform 1, and each wafer loading component 11 is evenly distributed around the axis L1. When the rotating platform 1 rotates, the pitch adjustment component 4 drives the wafer loading components 11 to change the pitch angle.

[0023] The pitch adjustment component 4 can directly change the pitch angle of the rotating platform 1, or it can independently drive the pitch angle of each wafer loading component 11. The wafer loading unit 11 is usually fixedly installed in the rotating platform 1. Therefore, the pitch adjustment component 4 can directly adjust the pitch angle of the rotating platform 1, thereby directly changing the pitch angle of the wafer loading unit 11, and thus dynamically adjusting the angle between the wafer normal and the gamma ray incident direction during the revolution. The size of the rotating platform 1 is much larger than the size of a single wafer loading unit 11. It is very easy for the pitch adjustment component 4 to adjust the pitch angle of the rotating platform 1. For example, the pitch adjustment component 4 includes three lifting mechanisms. The lifting end is spherically hinged to the bottom surface of the rotating base 2 to form a lifting fulcrum. The lifting fulcrum is evenly arranged around the axis L1. The other end is connected to the irradiation equipment as a reference plane. The lifting mechanism extends and retracts to change the vertical height of the lifting fulcrum. The three points determine a plane. The rotating platform 1 and the rotating base 2 are rotatably connected. The lifting fulcrum determines the pitch angle of the lifting base, which in turn changes the pitch angle of the rotating platform 1. Thus, the pitch angles of all wafer loading units 11 and wafers will also change synchronously. Meanwhile, the rotating drive 3 is fixedly mounted in the rotating base 2. The rotating base 2 and the rotating platform 1 change their pitch angles synchronously, so the relative angle between them does not change, and therefore does not affect the revolution of the wafer and the wafer loading component 11. In industrial irradiation fields, the angular divergence of the effective direct rays reaching the wafer is usually strictly controlled within ±5 degrees. A range of ±10 degrees provides 100% coverage margin, ensuring that the pitch motion is sufficient to "swallow" and average out all possible inherent angular deviations. At the same time, the larger the angle change, the more difficult it is to maintain high accuracy. Therefore, the pitch angle is controlled within ±10 degrees, preferably ±5 degrees, to ensure that the pitch motion achieves a balance between mechanical stability and dose control accuracy. This angle range is sufficient to compensate for the changes in incident angle-related path length caused by source distribution, shielding structure, and air attenuation in a typical gamma irradiation field.

[0024] Although the pitch angle adjustment structure of the entire rotating platform 1 is simple and stable, the rotating platform 1 contains multiple wafers, each with a diameter of 300mm. If the wafers are arranged in three groups around the axis L1 (a wafer box contains 25 wafers, with one wafer placed in the center of the rotating platform 1, eight wafers in the second ring, and sixteen wafers in the third ring, the 25 wafers are divided into three groups), the maximum spacing between the outermost wafers reaches 1500mm. Considering the spacing between wafers, the maximum spacing between the outermost wafers is at least two meters. With such a large structure, the linear displacement of the edge wafers can reach ±174mm when the pitch is ±10 degrees, and ±87mm when the pitch is ±5 degrees. This linear displacement changes the distance between the wafer and the irradiation source, thus affecting the dose uniformity. Therefore, the structure for adjusting the pitch angle of the entire rotating platform 1 is not suitable for processing 25 wafers at the same time. It can only handle small-batch irradiation scenarios. When the number of wafers is reduced, the maximum spacing between the outermost wafers will be significantly reduced. At the same time, the pitch angle is reduced. For example, when processing 8 wafers at the same time (the wafers are arranged in a circular array around the axis L1 once), the spacing between the outermost wafers is compressed to about 800mm. The pitch angle is controlled within ±3 degrees, which can suppress the linear displacement of the edge wafers to ±21mm.

[0025] Furthermore, this embodiment provides an independent pitch adjustment scheme for multiple sets of wafer loaders 11. The rotating platform 1 remains fixed, while the wafer loaders 11 are driven to pitch. Since the wafers and wafer loaders 11 are coaxial, when the wafer loaders 11 pitch, they form a right triangle with the wafer's own radius as the hypotenuse, which means the hypotenuse is 150mm. When the pitch is ±5 degrees, the displacement of the wafer edge is only ±13.1mm, which is much smaller than the displacement caused by the overall platform pitch, thus significantly improving the dose uniformity.

[0026] Ideally, the irradiation equipment would process all the wafers in an entire wafer cassette, i.e., process 25 wafers simultaneously. However, it is impossible to set up 25 independent drive motors, as this would lead to a sharp increase in system complexity and cost, and the difficulty of coordinating control between motors would increase exponentially.

[0027] Therefore, in this embodiment, the wafer loader 11 is hingedly mounted in the rotating platform 1, and the hinge axis 112 is L2; ​​the wafer loader 11 is arranged in X circles around the L1 circumference, and each circle of the wafer loader 11 is a group; The pitch adjustment assembly 4 has at least a plurality of axial drive members 41 and X axial slip rings 42. The axial slip rings 42 are slidably connected to the rotating platform 1 along L1 and rotate synchronously with the rotating platform 1. The plurality of axial drive members 41 respectively drive the axial slip ring 42 to slide; In each group, the edge ends of multiple wafer loaders 11 are connected to an axial slip ring 42, which drives the wafer loaders 11 to rotate around axis L2.

[0028] like Figure 1 As shown, the 25 wafers and wafer loaders 11 are divided into 3 groups. Each group of wafer loaders 11 is distributed circumferentially around axis L1 and hinged in the rotating platform 1. The specific arrangement is not limited. For example, the central wafer 1 is the first group, the second group has 8 wafers, and the third group has 16 wafers. Similarly, the first group can have 3 wafers, the second group has 7 wafers, and the third group has 15 wafers. (Refer to...) Figure 3 - Figure 6 The key point is that the pitch adjustment assembly 4 includes multiple axial slip rings 42, with one axial slip ring 42 corresponding to each set of wafer loaders 11. The axial slip rings 42 are slidably connected to the rotating platform 1 and rotate synchronously with the rotating platform 1, such as... Figure 6 Multiple guide posts 12 parallel to the axis L1 are arranged below the rotating platform 1 shown. The axial slip ring 42 passes through the guide shaft to achieve sliding connection and synchronous rotation. The axial drive member 41 is an electric push rod with one end fixed to the rotating platform 1 and the other end pushing the axial slip ring 42 to drive the axial slip ring 42 to slide along the axis L1. The axial slip ring 42 and multiple wafer loading units 11 in a group are connected by a first connecting rod 421. The two ends of the first connecting rod 421 are respectively hinged to the wafer loading unit 11 and the axial slip ring 42, and the hinge axis 112 is parallel to the axis L2 corresponding to the wafer loading unit 11 to which it is connected.

[0029] When the axial slip ring 42 moves along the L1 axis, it drives the entire group of wafer loaders 11 to rotate synchronously around the L2 axis. This achieves precise pitch control for each group. The independent sliding stroke of each group is calculated and set to ensure that the edge displacement of the corresponding wafer group is controlled within ±15mm during irradiation, taking into account both uniformity and system simplicity. At the same time, the rotating platform 1 drives the wafers to revolve. The wafers in each group pass through the same radiation field, but the radiation fields passed through by wafers in different groups are different. Therefore, the pitch adjustment of each group can independently adjust the incident angle of each group of wafers, so that each group of wafers obtains a matched dose response in its own radiation field, thereby achieving an overall dose deviation of ≤±1.2% between 25 wafers. Furthermore, in this application, the axial drive 41 only needs to drive three axial slip rings 42 to achieve three groups of independent pitch control. The difficulty and equipment structure complexity are far lower than the independent control of each wafer loader 11.

[0030] Furthermore, the control unit is communicatively connected to the rotation drive 3 and the pitch adjustment assembly 4, and is configured as follows: Requirements for receiving target irradiation dose and uniformity; Based on the target irradiation dose and uniformity requirements, a joint motion control program is generated and executed to coordinate the rotational motion of the rotating platform 1 and the pitch angle change motion of the wafer loading component 11.

[0031] After receiving the target dose and uniformity requirements set by the operator, the control unit automatically executes the following steps: Program matching: Based on the input parameters, retrieve the matching motion formula from the built-in process library. The formula includes: Rotation speed: for example, 15 revolutions per minute.

[0032] Pitch mode: For example, "five-step mode", that is, the pitch angle is fixed at five positions in sequence: -8 degrees, -4 degrees, 0 degrees, +4 degrees, and +8 degrees.

[0033] Timing: At each pitch position, the platform needs to rotate a full 3 revolutions at a constant speed.

[0034] Coordinated execution: The control unit simultaneously sends commands to the rotation drive 3 and the pitch adjustment assembly 4. It first drives the platform to rotate, and after every 3 full rotations, it commands the pitch angle to step to the next set value, until all angles of irradiation are completed.

[0035] Completion and Feedback: Once the entire motion sequence is completed, the control unit indicates that the process is finished. The entire process requires no manual intervention and automatically ensures the uniformity of dose distribution.

[0036] Example 2 Reference Figure 1 - Figure 6 As shown.

[0037] The axial drive unit and axial slip ring 42 are responsible for changing the pitch angle of the wafer load 11, but they have limited effect on maintaining the attitude stability of the wafer load 11 during irradiation. When the rotating platform 1 rotates, it will generate centrifugal force and vibration disturbance, causing the wafer load 11 to wobble slightly, which will affect the accuracy of the irradiation angle. For this reason, the pitch adjustment assembly 4 also includes a locking component 43, which provides a force N1 to the wafer load 11, and the force N1 changes the pitch angle of the wafer load 11.

[0038] Specifically, the locking component 43 includes a first spring piece 431. One end of the first spring piece 431 is fixed above the rotating platform 1, and the other end elastically abuts against the bottom of the wafer loading component 11. Taking the wafer loading component 11 being able to pitch ±5 degrees as an example, when the wafer loading component 11 is at the -5 degree limit position, the deformation of the first spring piece 431 is minimal, but it can still provide basic stability support for the wafer loading component 11. As the axial slip ring 42 moves downward, the wafer loading component 11 gradually pitches up, and the deformation of the first spring piece 431 increases synchronously.

[0039] Furthermore, the axial slip ring 42 simultaneously drives multiple wafer loaders 11. The force provided by the axial drive unit to the axial slip ring 42 is equal to the combined elastic force of the first spring pieces 431 at the positions of the multiple wafer loaders 11 in a group. For the first spring piece 431 to maintain stability, it needs to provide a sufficiently large elastic force even when in a state of minimum deformation. This also results in the first spring piece 431 having a larger elastic force when in a state of maximum deformation. It is not difficult to deform a single first spring piece 431, but... Figure 1 In the third group of wafer loaders 11, there are 16 first spring sheets 431. Therefore, the axial drive assembly needs to have sufficient power. However, it is often very costly to achieve both power and accuracy at the same time.

[0040] In this embodiment, the magnetically attracted component 432 and electromagnet 433 are added to the original locking component 43. The magnetically attracted component 432 and electromagnet 433 are only set in the group with the largest number of first spring pieces 431 in the third group. It is not necessary to add electromagnet 433 and magnetically attracted component 432 in the group with a smaller number of first spring pieces 431.

[0041] In a group of wafer loaders 11, a magnetically attracted component 432 is connected via a second link 4321. The wafer loading component 11 in the group is connected to a magnetically attracted component 432 by multiple second links 4321; The bottom of the rotating platform 1 extends to form a cylindrical guide wall 13; The magnetically attracted component 432 is sleeved on the cylindrical guide wall 13; The electromagnet 433 is sleeved on the cylindrical guide wall 13, and the electromagnet 433 is flexibly connected to the magnetically attracted member 432 and has a fixed distance. The magnetically attracted member 432 is away from the rotating platform 1 relative to the electromagnet 433. When the electromagnet 433 is energized, the electromagnet 433 is fixed to the cylindrical guide wall 13 and attracts the magnetically attracted component 432. When the electromagnet 433 is de-energized, the magnetically attracted component 432 can drive the electromagnet 433 to rise synchronously.

[0042] Electromagnet 433 can actively cancel the attraction force, so the attraction of electromagnet 433 will not generate additional resistance to the axial drive component 41. Therefore, in this embodiment, the elastic force of the first spring 431 can be reduced, so that the elastic force is only used as an auxiliary stabilizing force. When the pitch angle of the wafer loading component 11 is adjusted to the correct position, the corresponding electromagnet 433 will be activated, and the magnetic attraction force will provide force N1 to lock the angle of the wafer loading component 11.

[0043] However, in this embodiment, the magnetically attracted component 432 is not directly attracted to the rotating platform 1. If it were directly fixed to the rotating platform 1, the supporting force of the rotating platform 1 on the magnetically attracted component 432 would counteract the magnetic force, and thus the desired force N1 would not be generated. Therefore, in this embodiment, the electromagnet 433 is flexibly connected to the magnetically attracted component 432 with a fixed distance. This distance is very small, merely maintaining a displacement space for the magnetically attracted component 432 to move towards the electromagnet 433. Even if the electromagnet 433 is energized, the magnetically attracted component 432 and the electromagnet 433 will not come into contact, but the magnetically attracted component 432 will tend to move towards the electromagnet 433, generating a force N1.

[0044] The electromagnet 433 can also be configured as a multi-segment structure, with each segment of the electromagnet 433 able to approach each other. When the electromagnet 433 is energized, the inner diameter of the multi-segment electromagnet 433 contracts to better lock the cylindrical guide wall 13.

[0045] A friction layer can be provided on the side of the electromagnet 433 facing the cylindrical guide wall 13, so that when the electromagnet 433 is energized, it can be better locked on the cylindrical guide wall 13 and prevent the electromagnet 433 from sliding towards the magnetically attracted part 432.

[0046] Example 3 Reference Figure 2 - Figure 7 As shown.

[0047] The wafer loader 11 includes: The carrier disk 111 has a carrier surface for adsorbing and fixing the wafer; The hinge shaft 112 is integrally formed or fixedly connected to the bearing disk 111 to form the axis L2; The wafer cooling channel 113 is embedded inside the support disk 111 and has a cooling medium inlet 1131 and a cooling medium outlet 1132 extending to the hinge shaft 112. The cooling medium inlet 1131 and the cooling medium outlet 1132 are connected to the interior of the rotating platform 1; A flexible sealing ring is fitted between the hinge shaft 112 and the shaft hole of the rotating platform 1 to seal the rotary dynamic sealing interface at the cooling medium inlet 1131 / outlet.

[0048] In the prior art, the wafer loader 11 has a large contact area with the rotating platform 1, so the temperature of the wafer loader 11 can be well transferred to the rotating platform 1 and dissipated through the large volume of the rotating platform 1. However, in this application, the wafer loader 11 is hinged to the rotating platform 1, which results in a small contact area and thus reduces the heat dissipation effect.

[0049] In this application, the wafer loading component 11 is configured as a composite carrier disk, including a carrier disk body 111. The carrier disk body 111 can fix the wafer by electrostatic adsorption, mechanical clamping, or other fixing methods, the specific fixing method of which is not limited. A hinge shaft 112 is fixedly connected to the carrier disk body 111, forming an axis L2. A wafer cooling channel 113 is formed inside the carrier disk body 111. The cooling medium inlet 1131 and cooling medium outlet 1132 of the wafer cooling channel 113 extend to both ends of the hinge shaft 112, and the cooling medium inlet 1131 and cooling medium outlet 1132 communicate with the interior of the rotating platform 1. A flexible sealing ring is fitted between the hinge shaft 112 and the shaft hole of the rotating platform 1. That is, the cooling medium inside the rotating platform 1 can flow into the wafer cooling channel 113 at the location of the hinge shaft 112, thereby improving the heat dissipation performance of the wafer loading component 11 itself. The overall heat dissipation channels should be arranged in zones to dissipate heat for each group of wafers. Taking the outermost wafer as an example, after the cooling medium leaves the wafer cooling channel 113 of the first wafer loading component 11, the cooling medium passes through the wafer cooling channels 113 of the entire group of wafer loading components 11 in a clockwise or counterclockwise direction.

[0050] In the description of the embodiments of the present invention, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "center," "top," "bottom," "top," "bottom," "inner," "outer," "inner side," and "outer side," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. "Inner side" refers to the interior or enclosed area or space. "Outer perimeter" refers to the area surrounding a specific component or specific area.

[0051] In the description of embodiments of the present invention, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first," "second," "third," or "fourth" may explicitly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise stated, "a plurality of" means two or more.

[0052] In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "assembly" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances.

[0053] In the description of embodiments of the present invention, specific features, structures, materials or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0054] In the description of the embodiments of the present invention, it should be understood that "-" and "" represent a range between two numerical values, and this range includes the endpoints. For example, "AB" represents a range greater than or equal to A and less than or equal to B. "A~B" represents a range greater than or equal to A and less than or equal to B.

[0055] In the description of embodiments of the present invention, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character "" generally indicates that the preceding and following related objects have an "or" relationship.

[0056] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A wafer irradiation platform, characterized in that, include: Rotating platform, rotating base, rotating drive component, pitch adjustment assembly; The rotary drive component drives the rotary platform to rotate relative to the rotary base, with the rotation axis being L1; The rotating platform is equipped with multiple wafer loading components for fixing wafers; The wafer loader is rotatably mounted on the rotating platform, with the rotation axis being L2, and L1 being perpendicular to L2; When the rotating platform rotates, the pitch adjustment component drives the wafer loading component to change the pitch angle around axis L2; The wafer loader is hingedly mounted in the rotating platform with the hinge axis being L2; the wafer loader is arranged in X circles around the circumference of L1, and each circle of the wafer loader is a group; The pitch adjustment assembly has at least a plurality of axial drive components and X axial slip rings; the axial slip rings are slidably connected to the rotating platform along L1 and rotate synchronously with the rotating platform; The plurality of axial drive components respectively drive the axial slip ring to slide; In each group, the edge ends of multiple wafer loaders are connected to an axial slip ring, which drives the wafer loaders to rotate around axis L2.

2. The wafer irradiation platform according to claim 1, characterized in that, The rotating platform is provided with multiple guide columns, and the axial slip ring is slidably connected to the guide columns; The wafer loader in the set is connected to one of the axial slip rings via a plurality of first links; The two ends of the first connecting rod are respectively hinged to the wafer loading component and the axial slip ring, and the hinge axes are parallel to the axis L2.

3. A wafer irradiation platform according to claim 2, characterized in that, The pitch adjustment assembly further includes a locking component, which applies a force N1 to the wafer loader, thereby locking the pitch angle of the wafer loader.

4. A wafer irradiation platform according to claim 3, characterized in that: The locking component includes a first spring, one end of which is connected to the rotating platform and the other end of which is connected to the wafer loader.

5. A wafer irradiation platform according to claim 4, characterized in that, The locking component also includes a magnetically attracted element and an electromagnet; The wafer loader described in the group is connected to a magnetically attracted component via multiple second links; The bottom of the rotating platform extends to form a cylindrical guide wall; The magnetically attracted component is sleeved on the cylindrical guide wall surface; The electromagnet is sleeved on the cylindrical guide wall, and the electromagnet is flexibly connected to the magnetically attracted component and has a fixed distance. The magnetically attracted component is far away from the rotating platform relative to the electromagnet. When the electromagnet is energized, it is fixed to the cylindrical guide wall and attracts the magnetically attracted component. When the electromagnet is de-energized, the magnetically attracted component can drive the electromagnet to rise synchronously.

6. A wafer irradiation platform according to claim 5, characterized in that, The pitch adjustment component is configured to drive the wafer loader to step-switch between multiple discrete predetermined pitch angles, and at each predetermined pitch angle, the rotary platform completes at least one rotation.

7. A wafer irradiation platform according to claim 1, characterized in that, The range of motion for the pitch angle of the wafer loader around axis L2 is within ±10 degrees.

8. A wafer irradiation platform according to claim 1, characterized in that: The wafer loader includes: The carrier disk has a carrier surface for adsorbing and fixing the wafer; The hinge shaft is integrally formed or fixedly connected to the bearing disk body to form the axis L2; A wafer cooling channel is embedded inside the support disk and has a cooling medium inlet and a cooling medium outlet extending to the hinge shaft. The cooling medium inlet and cooling medium outlet are connected to the interior of the rotating platform; A flexible sealing ring is fitted between the hinge shaft and the shaft hole of the rotating platform to seal the rotary dynamic sealing interface at the inlet / outlet of the cooling medium.

9. A wafer irradiation platform according to claim 1, characterized in that, It also includes a control unit, which is communicatively connected to the rotation drive and the pitch adjustment assembly, and is configured to: Requirements for receiving target irradiation dose and uniformity; Based on the target irradiation dose and uniformity requirements, a joint motion control program is generated and executed to coordinate the rotational motion of the rotating platform and the pitch angle change motion of the wafer loading device.

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