A method of cleaning a semiconductor wafer, applications and products

Abstract

The application belongs to the technical field of semiconductor cleaning, and discloses a semiconductor wafer cleaning method, application and product. The cleaning method comprises the following steps: sequentially performing the following steps on a wafer to be cleaned: a glue removal treatment, a first plasma cleaning, a first organic solution cleaning, a first acid solution cleaning, a first alkaline solution cleaning, a second plasma cleaning and a second alkaline solution cleaning, and completing the cleaning. The cleaning method of the application is orderly coordinated and adapted to the process through each step, so that the surface of the cleaned wafer can meet the high cleanliness requirement of the subsequent semiconductor process, lays a foundation for the normal development of subsequent processes such as photolithography and ion implantation, effectively avoids the device failure problem caused by impurities on the wafer surface, and further improves the overall yield and long-term reliability of the semiconductor device.

Description

Technical Field

[0001] This application belongs to the field of semiconductor cleaning technology, and specifically relates to a cleaning method, application and product for semiconductor wafers. Background Technology

[0002] In semiconductor manufacturing processes, cleaning is a critical step in ensuring the quality of semiconductor wafer processing and the performance of subsequent devices, requiring extremely high cleanliness of the wafer surface. If undissolved photoresist fragments, organic byproducts from the process, metal particles, or residual organic solvents from development and resist removal remain on the wafer surface, they can have numerous adverse effects on subsequent processes. Organic impurities and conductive particles are prone to carbonization in subsequent high-temperature or chemical processes, forming hard contaminants that obscure wafer alignment marks and cause alignment deviations in the photolithography process. Residual organic solvents can disrupt the uniformity of subsequent photoresist coating and may also alter the acid-base environment of the wafer surface, interfering with the doping concentration distribution during ion implantation. These problems ultimately lead to failures such as electromigration and stress migration in semiconductor devices during operation, significantly reducing long-term device reliability. Therefore, thorough cleaning of semiconductor wafers is essential.

[0003] Currently, surface cleaning methods for compound semiconductor wafers are mainly divided into two categories: wet cleaning and dry cleaning. Both methods have insurmountable technical drawbacks. Wet cleaning often uses organic, acidic, or alkaline solvents combined with ultrasonic or high-pressure rinsing or immersion, followed by nitrogen drying or spin drying. While this method can dissolve and remove impurities through chemical reagents, the ultrasonic and high-pressure rinsing operations pose a significant risk of breakage to thin or brittle wafers such as gallium arsenide and indium phosphide, making it unsuitable for the cleaning needs of these wafers. When dealing with contaminants with hard outer shells, the chemical reagents used in wet cleaning have difficulty penetrating and reacting, failing to achieve effective removal. Furthermore, the surface tension of the solutions used in wet cleaning hinders the chemical reagents from entering deep holes and trenches within the wafer, easily creating cleaning dead zones and resulting in incomplete cleaning. Additionally, the single solution immersion method lacks specificity and has low removal efficiency for different types of impurities. Dry cleaning, conducted in a vacuum environment, uses radio frequency or microwave sources to ionize process gases such as oxygen, argon, and nitrogen, forming plasma. The active particles of the plasma then physically bombard and chemically react with contaminants on the material surface, decomposing organic matter into volatile gases for removal. While this method avoids mechanical damage to the wafer, the plasma ashing and ion sputtering processes are relatively gentle. For thick adhesive residues or large-area blocky contaminants, the cleaning time is longer, and the efficiency is far lower than that of wet ultrasonic cleaning. Furthermore, dry cleaning relies mainly on physical action and organic oxidation reactions, and it has no significant effect on removing oxide contaminants on the wafer surface, making it difficult to achieve comprehensive removal of impurities. Summary of the Invention

[0004] This application aims to improve at least one technical problem in the background art.

[0005] The first aspect of this application provides a method for cleaning a semiconductor wafer, comprising the following steps: The wafer to be cleaned is subjected to a resist removal process to obtain wafer A; Wafer A is subjected to a first plasma cleaning to obtain wafer B; Wafer B is cleaned with a first organic solution to obtain wafer C; Wafer C is cleaned with a first acidic solution to obtain wafer D; Wafer D is cleaned with a first alkaline solution to obtain wafer E; Wafer E is subjected to a second plasma cleaning to obtain wafer F; Wafer F is then cleaned with a second alkaline solution to complete the cleaning process. The plasma used for the first and second plasma cleaning processes is O2.

[0006] In some specific implementation scenarios, the parameters for the first plasma cleaning are: time 30s-60s, radio frequency power 60W-90W, and mass flow rate 40sccm-60sccm.

[0007] In some specific implementations, the parameters for the second plasma cleaning are the same as those for the first plasma cleaning.

[0008] In some specific implementations, the first organic solution cleaning includes the following steps: Wafer B is sequentially immersed in the first solvent for 5 min-10 min, rinsed in the second solvent for 3 min-5 min, rinsed with water for 5 min-10 min, and dried to complete the first organic solution cleaning; The first solvent includes one of N-methylpyrrolidone and acetone; The second solvent includes isopropanol.

[0009] In some specific implementations, the first acidic solution cleaning includes the following steps: Immerse wafer C in an acidic solution for 30-60 seconds, then rinse with water for 5-10 minutes to complete the first acidic solution cleaning.

[0010] In some specific implementations, the first alkaline solution cleaning includes the following steps: Immerse wafer D in an alkaline solution for 30-60 seconds, then rinse with water for 3-5 minutes to complete the first alkaline solution cleaning.

[0011] In some specific implementations, the steps for cleaning with the second alkaline solution are the same as those for cleaning with the first alkaline solution.

[0012] In some specific implementations, residual adhesive removal is performed after rinsing with the second alkaline solution.

[0013] The second aspect of this application provides the application of the above-described cleaning method in the cleaning of semiconductor products.

[0014] A third aspect of this application provides a semiconductor wafer obtained by the cleaning method described above.

[0015] The beneficial effects of this application are as follows: The semiconductor wafer cleaning method of this application, through a multi-step cleaning process design that alternates between dry and wet cleaning, effectively solves various technical defects existing when wet and dry cleaning are used alone. It achieves adaptability cleaning for thin, brittle, and high aspect ratio compound semiconductor wafers, avoiding the risk of wafer breakage due to mechanical impact and solving problems such as difficulty in removing hard contaminants, the formation of cleaning dead zones, and poor removal of metal oxides. It can comprehensively remove various contaminants such as photoresist residue, organic byproducts, metal particles, and oxides from the wafer surface, improving the overall cleanliness of the wafer surface while effectively reducing cleaning reagent residue, ensuring a balance between cleaning efficiency and cleaning effect. Through the orderly coordination and process adaptation of each step, the cleaning method of this application ensures that the cleaned wafer surface meets the high cleanliness requirements of subsequent semiconductor processes, laying the foundation for the normal operation of subsequent photolithography, ion implantation, and other processes. It effectively avoids device failure caused by impurities on the wafer surface, thereby improving the overall yield and long-term reliability of semiconductor devices. Attached Figure Description

[0016] Figure 1 This shows the surface condition of the wafer after conventional wet cleaning. Figure 2 In a specific embodiment of this application, the hard outer shell of the contaminant is broken through by first plasma cleaning; Figure 3 The wafer surface condition after plasma cleaning according to a specific embodiment of this application; Figure 4 The wafer surface condition after the first plasma cleaning was compared in a test where excessively high radio frequency power was used for the first plasma cleaning. Figure 5 This shows the contaminants remaining on the wafer surface after the first plasma cleaning. Figure 6 The wafer surface condition after cleaning with the first acidic solution is shown in the specific embodiment of this application; Figure 7 The wafer surface condition after cleaning with the first alkaline solution is shown in the specific embodiment of this application. Figure 8 The surface condition of the wafer after cleaning with the first alkaline solution in a comparative experiment to extend the immersion time in alkaline solution; Figure 9 This shows the hard, shell-like organic matter that has accumulated on the wafer surface after cleaning with the first alkaline solution. Figure 10 The wafer surface condition after cleaning with the second alkaline solution is shown in the specific embodiment of this application. Detailed Implementation

[0017] The present application will be further described below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the application. Furthermore, it should be understood that after reading the contents of this application, those skilled in the art can make various alterations or modifications to this application, and these equivalent forms also fall within the scope defined by the appended claims.

[0018] This application provides a method for cleaning semiconductor wafers, including the following steps: The wafer to be cleaned is subjected to a resist removal process to obtain wafer A; Wafer A is subjected to a first plasma cleaning to obtain wafer B; Wafer B is cleaned with a first organic solution to obtain wafer C; Wafer C is cleaned with a first acidic solution to obtain wafer D; Wafer D is cleaned with a first alkaline solution to obtain wafer E; Wafer E is subjected to a second plasma cleaning to obtain wafer F; Wafer F is then cleaned with a second alkaline solution to complete the cleaning process. The plasma used for the first and second plasma cleaning processes is O2.

[0019] This application discloses a semiconductor wafer cleaning method that addresses various defects present in traditional wet and dry cleaning processes for compound semiconductor wafers. It employs a multi-step cleaning process alternating between wet and dry methods, achieving highly efficient cleaning of semiconductor wafers through the coordinated use of two oxygen plasma cleaning cycles and organic, acidic, and alkaline solution cleanings. This method is particularly suitable for thin wafers (3-inch to 6-inch, with thicknesses ranging from 90μm to 130μm), brittle wafers (such as GaAs and InP), and compound semiconductor wafers with high aspect ratios (5:1 to 20:1, especially 10:1 to 15:1). The cleaning method first performs a photoresist removal process on the wafer to be cleaned, initially removing the photoresist layer from the wafer surface to lay the foundation for subsequent deep cleaning. The wafers after resist removal then undergo a first plasma cleaning. This step uses oxygen (pure oxygen) plasma to break down the hard outer shell of contaminants on the wafer surface and remove most of the organic residue. Simultaneously, the pure oxygen plasma bombards the material surface, introducing numerous polar functional groups such as hydroxyl groups, whether silicon, oxides, or metals. This transforms the wafer surface from hydrophobic to hydrophilic, enhancing the wettability of subsequent wet chemical cleaning solutions and ensuring uniform coverage, reducing the probability of cleaning dead zones caused by surface tension. Next, the wafers after the first plasma cleaning undergo a first organic solution cleaning. Completing this step before acidic and alkaline solution cleaning effectively removes residual organic contaminants from the wafer surface, preventing these organic substances from carbonizing and forming new hard impurities during subsequent acid and alkaline cleaning processes, which would increase the cleaning difficulty. Subsequently, the wafers that have completed organic solution cleaning undergo a first acidic solution cleaning, which efficiently dissolves metal ions adsorbed on the wafer surface and removes oxides, reducing the adverse effects of metal contamination on wafer performance. After the acidic solution cleaning, the wafers undergo a first alkaline solution cleaning to further dissolve remaining contaminants on the wafer surface, neutralize any acidic residues from the previous acidic cleaning, and provide passivation protection to the wafer surface, reducing damage from subsequent plasma cleaning. Following this, the wafers that have completed the first alkaline solution cleaning undergo a second plasma cleaning, again using oxygen-generated plasma. For some thick, multi-layered hard-shell contaminants, after the preceding wet cleaning (first organic solution cleaning, first acidic solution cleaning, and first alkaline solution cleaning) has sufficiently thinned them, this plasma cleaning thoroughly removes the last trace amounts of residual organic matter from the wafer surface. This organic matter reacts with the oxygen plasma to generate gaseous products, which are then extracted. Finally, the wafer that has completed the second plasma cleaning is subjected to a second alkaline solution cleaning to complete the entire cleaning process. The second alkaline solution cleaning can further remove residual impurities on the wafer surface, while ensuring that all kinds of cleaning reagent residues on the wafer surface are completely removed, ensuring the cleanliness of the wafer and meeting the high cleanliness requirements of subsequent semiconductor wafer processes.

[0020] During the first plasma cleaning of the wafer, specific cleaning parameters can be adjusted and set. In some specific implementations, the parameters for the first plasma cleaning are: time 30s-60s, RF power 60W-90W, and MFC flow 40sccm-60sccm. This parameter range represents the optimal choice for both cleaning effect and wafer protection. If the RF power is set too high, it will exacerbate the physical damage to the wafer. High-energy ion bombardment can also cause lattice damage and charge accumulation, thus affecting the electrical performance of subsequent devices fabricated from the wafer. If the RF power is set too low, the plasma cleaning process will be insufficient, failing to effectively remove thick or stubborn contaminants from the wafer surface, ultimately resulting in incomplete cleaning and resist removal. If the MFC flow is too high, it will shorten the residence time of oxygen in the chamber, leading to insufficient gas dissociation and reducing plasma density and cleaning efficiency. If the mass flow rate is too low, it will be difficult to effectively remove the byproducts generated in the process. If the amount of fresh reaction gas replenished in the chamber is insufficient, the concentration of etching byproducts will continue to rise, and byproducts will easily be redeposited on the wafer surface. It will also inhibit the plasma cleaning reaction. By controlling the process time, RF power and mass flow rate to 30s-60s, it is possible to effectively break down the hard shell of contaminants and remove most of the organic residues, while ensuring that sufficient polar functional groups such as hydroxyl groups are introduced into the wafer surface. This ensures the effective transformation of the wafer surface from hydrophobic to hydrophilic, meeting the wettability requirements of the subsequent wet cleaning process. In this specific embodiment of the application, the parameters of the first plasma cleaning are: time of 50s (in some other specific embodiments, the time can be any value in the range of 30s-60s, such as 30s, 35s, 40s, 60s), radio frequency power of 80W (in some other specific embodiments, the radio frequency power can be any value in the range of 60W-90W, such as 60W, 70W, 90W), and mass flow rate of 50sccm (in some other specific embodiments, the mass flow rate can be any value in the range of 40sccm-60sccm, such as 40sccm, 45sccm, 60sccm).

[0021] The surface condition of the wafer after conventional wet cleaning is as follows Figure 1 As shown, the hard outer shell of the contaminant was not effectively broken, and there was essentially no change after cleaning. In this specific embodiment of the present application, the hard outer shell of the contaminant is broken through by the first plasma cleaning as follows: Figure 2 As shown, the wafer surface condition after plasma cleaning in this specific embodiment of the present application is as follows: Figure 3As shown, when the plasma is O2, the first plasma cleaning can break down the hardened contaminant layer and remove most of the residual organic matter. In a comparative experiment, the first plasma cleaning used excessively high radio frequency power (120 W), and the wafer surface condition after the first plasma cleaning is as follows. Figure 4 As shown, high-energy ion bombardment leads to lattice damage.

[0022] In some specific implementations, the parameters for the second plasma cleaning of wafers are the same as those for the first plasma cleaning. This is because the second plasma cleaning, following the preceding wet cleaning with organic, acidic, and alkaline solutions, thoroughly removes trace amounts of residual organic matter from the thinned, multi-layered hard-shell contaminants on the wafer surface. Using the same parameters as the first plasma cleaning ensures sufficient cleaning power from the plasma to effectively decompose the remaining trace organic matter on the wafer surface into gaseous products and remove them from the chamber. It also avoids the risk of wafer damage caused by parameter adjustments. Furthermore, standardized parameter settings simplify the entire cleaning process, reduce the cost of process parameter adjustments, and ensure the stability and consistency of the cleaning effect throughout the plasma cleaning process.

[0023] After the first plasma cleaning is completed, the wafer undergoes a first organic solution cleaning. In some specific implementations, the first organic solution cleaning includes the following steps: Wafer B is sequentially immersed in the first solvent for 5 min-10 min, rinsed in the second solvent for 3 min-5 min, rinsed with water for 5 min-10 min, and dried to complete the first organic solution cleaning; The first solvent includes one of N-methylpyrrolidone (NMP) and acetone; The second solvent includes isopropanol (IPA).

[0024] This step effectively dissolves and removes organic contaminants or incompletely ashed organic matter (such as...) remaining on the wafer surface after the first plasma cleaning. Figure 5 As shown in the red circle, rinsing with isopropanol can also remove the first solvent remaining on the wafer surface, while reducing the surface tension of the wafer surface and reducing the adsorption of organic reagents on the wafer surface. Subsequent water rinsing can further remove solvent residues. Completing this step before acid and alkali cleaning can effectively prevent organic matter on the wafer surface from carbonizing during subsequent acid and alkali cleaning, forming new hard impurities and increasing the cleaning difficulty.

[0025] In this specific embodiment of the application, the first organic solution cleaning includes the following steps: Wafer B is sequentially immersed in acetone (or N-methylpyrrolidone in some other specific embodiments) for 10 minutes (in some other specific embodiments, the immersion time can be any value within the range of 10 minutes, such as 5 minutes, 6 minutes, or 8 minutes), rinsed with isopropanol for 5 minutes (in some other specific embodiments, the rinsing time can be any value within the range of 3 minutes to 5 minutes, such as 3 minutes or 4 minutes), rinsed with water (deionized water) for 10 minutes (in some other specific embodiments, the rinsing time can be any value within the range of 5 minutes to 10 minutes, such as 5 minutes, 6 minutes, or 8 minutes), and dried (in some other specific embodiments, a spin dryer can be used to spin dry), thus completing the first organic solution cleaning.

[0026] After the first organic solution cleaning is completed, the wafer is then subjected to a first acidic solution cleaning. In some specific implementations, the first acidic solution cleaning includes the following steps: Immerse wafer C in an acidic solution for 30-60 seconds, then rinse with water for 5-10 minutes to complete the first acidic solution cleaning.

[0027] The duration of acidic solution immersion can efficiently dissolve metal ions adsorbed on the wafer surface during the process, while precisely removing the acid-soluble natural oxide layer on the wafer surface and oxide residues on the metal electrode surface. This effectively dissolves and thins out contaminants on the wafer surface, preventing metal contamination from adversely affecting wafer performance at its source. Subsequent water rinsing can significantly reduce acidic solution residues on the wafer surface, preventing residual acidic substances from adversely affecting subsequent cleaning steps and the wafer itself.

[0028] In this specific embodiment of the application, the first acidic solution cleaning includes the following steps: The wafer C is immersed in an acidic solution (hydrochloric acid solution, with a hydrochloric acid to deionized water volume ratio of 1:10) for 50 seconds (in some other specific implementations, the immersion time can be any value in the range of 30 seconds to 60 seconds, such as 30 seconds, 40 seconds, or 60 seconds), and then rinsed with water (deionized water) for 10 minutes (in some other specific implementations, the rinsing time can be any value in the range of 5 minutes to 10 minutes, such as 5 minutes, 6 minutes, or 8 minutes) to complete the first acidic solution cleaning.

[0029] The wafer surface condition after cleaning with the first acidic solution in this specific embodiment of the present application is as follows: Figure 6 As shown, the pollutants are effectively dissolved and thinned.

[0030] After completing the first acidic solution cleaning, the wafer undergoes a first alkaline solution cleaning. In some specific implementations, the first alkaline solution cleaning includes the following steps: Immerse wafer D in an alkaline solution for 30-60 seconds, then rinse with water for 3-5 minutes to complete the first alkaline solution cleaning.

[0031] After acid cleaning removes oxides and metallic impurities, the alkaline solution immersion for this duration can further dissolve the remaining contaminants on the wafer surface, neutralize the acidic substances remaining on the wafer surface after the previous acid cleaning, and also form passivation protection on the wafer surface, reducing the damage to the wafer caused by the subsequent second plasma cleaning. The subsequent water rinsing can effectively remove the alkaline solution residue on the wafer surface, providing a clean wafer surface condition for the subsequent plasma cleaning process.

[0032] In this specific embodiment of the application, the first alkaline solution cleaning includes the following steps: The wafer D is immersed in an alkaline solution (ammonia solution, with a volume ratio of ammonia to deionized water of 1:10) for 50 seconds (in some other specific implementations, the immersion time can be any value in the range of 30 seconds to 60 seconds, such as 30 seconds, 40 seconds, or 60 seconds), and then rinsed with water for 5 minutes (in some other specific implementations, the rinsing time can be any value in the range of 3 minutes to 5 minutes, such as 3 minutes or 4 minutes) to complete the first alkaline solution cleaning.

[0033] The wafer surface condition after cleaning with the first alkaline solution in this specific embodiment of the present application is as follows: Figure 7 As shown, contaminants on the wafer surface can be seen to dissolve further.

[0034] After the second plasma cleaning, the wafer undergoes a second alkaline solution cleaning. In some specific implementations, the steps for the second alkaline solution cleaning are the same as those for the first alkaline solution cleaning. The second alkaline solution cleaning follows the fine cleaning operation of the preceding second plasma cleaning, employing the same steps as the first alkaline solution cleaning. This ensures consistency and convenience of the process operation, eliminating the need for additional process parameter adjustments. Furthermore, the standardized operation further removes any remaining trace contaminants from the wafer surface after multiple cleaning steps, while simultaneously completing the rinsing operation to thoroughly remove reagent residues and reaction byproducts generated from the preceding cleaning steps. This ensures that the wafer surface is free of any cleaning reagent residue, laying a clean surface foundation for any subsequent processing.

[0035] like Figure 7 As shown, residue remained on the wafer surface after the first alkaline solution cleaning. In a comparative experiment, the immersion time in the alkaline solution during the first alkaline solution cleaning was extended (by 60 seconds). The condition of the wafer surface after cleaning was as follows. Figure 8As shown, individual round contaminants remain on the wafer surface. The second plasma cleaning is used to remove the hardened organic matter (such as...) deposited on the surface. Figure 9 As shown in the figure), the wafer surface condition after cleaning with the second alkaline solution in this specific embodiment of the present application is as follows. Figure 10 As shown, the wafer surface is completely clean.

[0036] In this specific embodiment of the application, the soaking or rinsing steps in the first organic solution cleaning, the first acidic solution cleaning, the first alkaline solution cleaning, and the second alkaline solution cleaning all employ an open circulation and no ultrasonic operation. The open circulation ensures the fluidity of the cleaning solution, allowing the cleaning reagent to fully contact the wafer surface and continuously replenishing the cleaning process with fresh cleaning reagent, thus ensuring the cleaning effect of each wet cleaning step. The no-ultrasonic design is adapted to the characteristics of thin and brittle compound semiconductor wafers, avoiding wafer breakage caused by the mechanical impact of ultrasound, achieving a balance between cleaning efficiency and wafer structure protection from a process operation perspective.

[0037] In this specific embodiment of the application, the photoresist removal process performed on the wafer to be cleaned is a conventional photoresist removal process. This operation is the initial basic step of the entire wafer cleaning process and belongs to the conventional cleaning operation for photoresist on the wafer surface. Specifically, the photoresist is first removed from the wafer to remove the main photoresist layer attached to the wafer surface. Then, the wafer is rinsed with deionized water to remove the sticky residue and impurities generated during the photoresist removal process. Finally, the deionized water on the wafer surface is removed by spin drying, completing the basic photoresist removal and cleaning process. This effectively removes most of the photoresist layer on the wafer surface, clearing the way for subsequent deep cleaning steps such as plasma cleaning, organic solution cleaning, and acid / alkali solution cleaning. This allows the reagents and processes of subsequent cleaning steps to act more directly on various contaminants on the wafer surface, ensuring the overall cleaning efficiency and the effectiveness of subsequent cleaning processes from the beginning.

[0038] In some specific implementations, a descumbing process is performed after the second alkaline solution cleaning. This step is a routine final operation in the entire semiconductor wafer cleaning process. After the preceding descumbing, two plasma cleanings, and multiple rounds of wet cleaning, this descumbing process provides a final, fine cleaning of the wafer surface, removing any trace amounts of residual adhesive and other tiny contaminants that may remain. This further improves the cleanliness of the wafer surface, ensuring it meets the high cleanliness standards required for subsequent semiconductor processes and guaranteeing that the cleaned wafer meets the requirements for use in subsequent processing.

[0039] In the description of this specification, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature.

[0040] The above description is only a preferred embodiment of this application. It should be noted that those skilled in the art can make several improvements and additions without departing from the method of this application, and these improvements and additions should also be considered within the scope of protection of this application.

Claims

1. A method for cleaning semiconductor wafers, characterized in that, Includes the following steps: The wafer to be cleaned is subjected to a resist removal process to obtain wafer A; The wafer A is subjected to a first plasma cleaning to obtain wafer B; The wafer B is cleaned with a first organic solution to obtain wafer C; The wafer C is cleaned with a first acidic solution to obtain wafer D; The wafer D is cleaned with a first alkaline solution to obtain wafer E; The wafer E is subjected to a second plasma cleaning to obtain wafer F; The wafer F is then cleaned with a second alkaline solution to complete the cleaning process. The plasma used in the first plasma cleaning and the second plasma cleaning is O2.

2. The semiconductor wafer cleaning method according to claim 1, characterized in that, The parameters for the first plasma cleaning are: time 30s-60s, radio frequency power 60W-90W, and mass flow rate 40sccm-60sccm.

3. The semiconductor wafer cleaning method according to claim 2, characterized in that, The parameters for the second plasma cleaning are the same as those for the first plasma cleaning.

4. The semiconductor wafer cleaning method according to claim 1, characterized in that, The first organic solution cleaning includes the following steps: The wafer B is sequentially immersed in the first solvent for 5 min-10 min, rinsed in the second solvent for 3 min-5 min, rinsed with water for 5 min-10 min, and dried to complete the first organic solution cleaning; The first solvent includes one of N-methylpyrrolidone and acetone; The second solvent includes isopropanol.

5. The semiconductor wafer cleaning method according to claim 1, characterized in that, The first acidic solution cleaning includes the following steps: The wafer C is immersed in an acidic solution for 30-60 seconds and then rinsed with water for 5-10 minutes to complete the first acidic solution cleaning.

6. The semiconductor wafer cleaning method according to claim 1, characterized in that, The first alkaline solution cleaning includes the following steps: The wafer D is immersed in an alkaline solution for 30-60 seconds and then rinsed with water for 3-5 minutes to complete the first alkaline solution cleaning.

7. The semiconductor wafer cleaning method according to claim 6, characterized in that, The steps for cleaning with the second alkaline solution are the same as those for cleaning with the first alkaline solution.

8. The semiconductor wafer cleaning method according to claim 1, characterized in that, After cleaning with the second alkaline solution, a residual adhesive removal process is performed.

9. The application of the cleaning method according to any one of claims 1-8 in the cleaning of semiconductor products.

10. A semiconductor wafer, characterized in that, The semiconductor wafer is obtained by the cleaning method according to any one of claims 1-8.

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