Method of determining an optical proximity correction model and product
By grouping the initial layout and scaling the offset, a variety of error simulation schemes were constructed, and the optimal OPC model was determined. This solved the problem that the existing OPC model could not compensate for mask fabrication errors in high-precision photolithography processes, and improved the matching degree of wafer patterns and manufacturing yield after photolithography.
CN122284205APending Publication Date: 2026-06-26ORIENTAL CRYSTAL MICROELECTRONICS TECH (SHANGHAI) CO LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ORIENTAL CRYSTAL MICROELECTRONICS TECH (SHANGHAI) CO LTD
- Filing Date
- 2026-03-27
- Publication Date
- 2026-06-26
Smart Images
Figure CN122284205A_ABST
Abstract
This application discloses a method and product for determining an optical proximity effect correction model, relating to the field of optical proximity effect correction technology. The method for determining the optical proximity effect correction model includes: grouping the graphics in the initial layout according to their geometric features to obtain at least one graphic group; determining the basic offset of each graphic group based on the correspondence between preset parameter value ranges and graphic manufacturing deviations; scaling each basic offset according to multiple preset magnifications to obtain a target offset set corresponding to each preset magnification; the target offset set includes the target offsets of each graphic group at the preset magnification; moving the target edges of the graphics in the initial layout based on each target offset in each target offset set to obtain candidate layouts corresponding to each target offset set; and performing OPC modeling based on each candidate layout to determine the OPC model.
Need to check novelty before this filing date? Find Prior Art