Back contact batteries, battery modules and photovoltaic systems

By optimizing the alternating arrangement of p-type and n-type doped layers on a silicon substrate in a back-contact solar cell and setting an isolation layer in between, the leakage problem caused by the lateral diffusion of dopants was solved, achieving higher isolation performance and cell efficiency.

CN122294582APending Publication Date: 2026-06-26ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
Filing Date
2026-04-28
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

In existing technologies, during the fabrication of back-contact solar cells, the lateral diffusion of dopants in the p-type and n-type regions leads to leakage, making it difficult to ensure effective isolation between the p-region and n-region without creating deep trenches.

Method used

Alternating p-type and n-type doped layers are arranged on a silicon substrate, with an isolation layer in between. The isolation layer includes a bulk region, a first transition region, and a second transition region. Effective isolation performance is ensured by optimizing the overall width of the isolation layer and the width of the transition region.

Benefits of technology

Without creating deep trenches, the isolation performance of the p-region and n-region is significantly improved, leakage paths are blocked, and the efficiency of the back contact battery is increased.

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Abstract

This application relates to the field of solar cell technology, and provides a back-contact cell, a cell module, and a photovoltaic system. In the back-contact cell, an insulating layer is located between adjacent p-type and n-type doped layers, separating them. A first transition region is located between the bulk region and the p-type doped layer, and a second transition region is located between the bulk region and the n-type doped layer. The overall width of the insulating layer is W, the width of the first transition region is Wp, and the width of the second transition region is Wn, where 5*(Wp+Wn)≤W≤80*(Wp+Wn). Thus, by specifically optimizing the overall width W of the insulating layer, the width Wp of the first transition region, and the width Wn of the second transition region, even with the presence of both transition regions, the insulating layer can retain a sufficiently wide bulk region, thereby significantly improving the isolation performance between the n-region and the p-region, and consequently improving the efficiency of the back-contact cell.
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