Display device, method of manufacturing display device, and electronic device

Abstract

A display device, a method of manufacturing the display device, and an electronic device are provided. The display device includes a display layer and a driving layer. The display layer includes a plurality of light-emitting devices. The driving layer is configured to drive the light-emitting devices. At least one of the light-emitting devices includes a light-emitting structure, a first electrode pattern, and a second electrode pattern. The light-emitting structure includes a first light-emitting element, a second light-emitting element, and a third light-emitting element on the driving layer. The first to third light-emitting elements are configured to emit light of different wavelengths. Each light-emitting element includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first electrode pattern is configured to apply an independent voltage to the second type semiconductor layer of the light-emitting structure, and the second electrode pattern is configured to apply a common voltage to the first type semiconductor layer of the light-emitting structure.

Description

Technical Field

[0001] Embodiments of this disclosure relate to light-emitting devices, display devices including light-emitting devices, and methods for manufacturing display devices. Background Technology

[0002] Light-emitting devices such as light-emitting diodes (LEDs) are hailed as the next generation of light sources due to their advantages over related technologies, such as longer lifespan, lower power consumption, faster response time, and environmental friendliness. As a result of these advantages, industrial demand for such light-emitting devices has increased. LEDs are commonly used in a variety of products, such as lighting devices and display devices.

[0003] Recently, ultra-small light-emitting diodes (LEDs) with micrometer or nanometer-scale dimensions have been developed, and these LEDs are called microLEDs. MicroLEDs are used in relatively large display devices (such as televisions), and further attempts are being made to apply them to small display devices (such as displays for augmented reality (AR) devices). MicroLEDs used in relatively small display devices are extremely small, only a few micrometers in size, making it difficult to ensure a relatively large luminous area. For example, in microLEDs with vertically arranged RGB subpixels, the reduced luminous area due to the electrodes used to drive each subpixel may lead to a decrease in the luminous efficiency of the microLED. Summary of the Invention

[0004] One or more embodiments provide a monolithic light-emitting device with an epitaxial structure, a display device including the light-emitting device, and a method for manufacturing the display device, wherein multiple light-emitting elements emitting light of different wavelengths are vertically stacked in the epitaxial structure.

[0005] One or more embodiments also provide a light-emitting device with improved luminous efficiency, a display device including the light-emitting device, and a method for manufacturing the display device.

[0006] Additional aspects will be set forth in part in the description which follows, and in part will be apparent from the description, or may be learned by practicing one or more of the embodiments.

[0007] According to one or more embodiments, a display device is provided, the display device comprising: a display layer including a plurality of light-emitting devices; and a driving layer configured to drive the plurality of light-emitting devices, wherein at least one of the plurality of light-emitting devices includes: a light-emitting structure including a first light-emitting element, a second light-emitting element, and a third light-emitting element on the driving layer, the first light-emitting element, the second light-emitting element, and the third light-emitting element configured to emit light of different wavelengths, and each of the first light-emitting element, the second light-emitting element, and the third light-emitting element includes a first type semiconductor layer, an active layer, and a second type semiconductor layer; and a first electrode pattern on a first outer surface of the light-emitting structure and a lower surface of the light-emitting structure. The first electrode pattern is configured to apply independent voltages to the second type semiconductor layer of the light-emitting structure; the second electrode pattern, on the second outer surface and the lower surface of the light-emitting structure, is configured to apply a common voltage to the first type semiconductor layer of the light-emitting structure; and an insulating layer, between the first electrode pattern and the light-emitting structure and between the second electrode pattern and the light-emitting structure, the insulating layer includes a plurality of openings through which the first electrode pattern and the second electrode pattern are connected to the light-emitting structure, wherein the first outer surface includes a protrusion, and the second type semiconductor layer of the light-emitting structure protrudes from the first type semiconductor layer and the active layer, which are respectively adjacent to the second type semiconductor layer, at the protrusion.

[0008] The first type of semiconductor layer can be an n-type semiconductor layer, and the second type of semiconductor layer can be a p-type semiconductor layer.

[0009] The first electrode pattern may include: a first electrode connected to a second type semiconductor layer of a first light-emitting element through a first opening in an insulating layer; a second electrode connected to a second type semiconductor layer of a second light-emitting element through a second opening in an insulating layer; and a third electrode connected to a second type semiconductor layer of a third light-emitting element through a third opening in an insulating layer, wherein the first electrode, the second electrode, and the third electrode may be spaced apart from each other.

[0010] At least one of the first opening, the second opening, and the third opening may be on the protruding portion.

[0011] The second outer surface may include a recessed portion, wherein at least one of the first type of semiconductor layers of the light-emitting structure is recessed into the light-emitting structure at the recessed portion.

[0012] The second electrode pattern can contact at least one of the first type of semiconductor layers of the light-emitting structure at the recessed portion.

[0013] The second electrode pattern can contact the outer surface of at least one of the first type of semiconductor layers at the recessed portion.

[0014] The second electrode pattern can contact the lower surface of at least one of the first type of semiconductor layers at the recessed portion.

[0015] The second electrode pattern can contact the first type semiconductor layer of the first light-emitting element through the fourth opening of the insulating layer, contact the first type semiconductor layer of the second light-emitting element through the fifth opening of the insulating layer, and contact the first type semiconductor layer of the third light-emitting element through the sixth opening of the insulating layer.

[0016] At least one of the fourth, fifth, and sixth openings may be on the recessed portion.

[0017] The fourth opening may be located on the lower surface of the first type of semiconductor layer of the first light-emitting element.

[0018] In each of the first light-emitting element, the second light-emitting element, and the third light-emitting element, a first type semiconductor layer, an active layer, and a second type semiconductor layer can be sequentially stacked from the driving layer.

[0019] The width of the light-emitting structure in the horizontal direction can gradually increase in the vertical direction from the first light-emitting element toward the third light-emitting element.

[0020] The first wavelength of the light emitted by the first light-emitting element may be less than the second wavelength of the light emitted by the second light-emitting element, and the second wavelength of the light may be less than the third wavelength of the light emitted by the third light-emitting element.

[0021] The width of each of the second type of semiconductor layers in the light-emitting structure in the horizontal direction can gradually increase in the vertical direction away from the driving layer.

[0022] The display device may also include an optical layer on the display layer and configured to control the propagation path of light emitted from the display layer.

[0023] The optical layer may include multiple microlenses that correspond one-to-one with the multiple light-emitting devices.

[0024] The display layer may also include a scattering pattern configured to scatter light emitted from the display layer;

[0025] According to one or more embodiments, a method of manufacturing a display device is provided, the method comprising forming a light-emitting structure by sequentially monolithically stacking a first light-emitting element, a second light-emitting element, and a third light-emitting element on a growth substrate, the first light-emitting element, the second light-emitting element, and the third light-emitting element being configured to emit light of different wavelengths, and each of the first light-emitting element, the second light-emitting element, and the third light-emitting element comprising a first type semiconductor layer, an active layer, and a second type semiconductor layer; forming a protrusion on a first outer surface of the light-emitting structure, the second type semiconductor layer of the light-emitting structure protruding outward from the first type semiconductor layer and the active layer respectively adjacent to the second type semiconductor layer at the protrusion; forming a recessed portion on a second outer surface of the light-emitting structure and recessed into the first type semiconductor layer of the light-emitting structure; forming a first electrode pattern and a second electrode pattern, the first electrode pattern contacting the second type semiconductor layer through the protrusion, and the second electrode pattern contacting the first type semiconductor layer through the recessed portion; and bonding the first electrode pattern and the second electrode pattern to a backplane.

[0026] According to another aspect of one or more embodiments, an electronic device is provided, comprising: a display panel including a display layer comprising a plurality of light-emitting devices and a driving layer configured to drive the plurality of light-emitting devices; and at least one processor configured to control the display panel based on an image signal, wherein at least one of the plurality of light-emitting devices comprises: a light-emitting structure including a first light-emitting element, a second light-emitting element, and a third light-emitting element on the driving layer, the first light-emitting element, the second light-emitting element, and the third light-emitting element configured to emit light of different wavelengths, and each of the first light-emitting element, the second light-emitting element, and the third light-emitting element includes a first type semiconductor layer, an active layer, and a second type semiconductor layer; a first electrode pattern configured to apply independent voltages to the second type semiconductor layer of the light-emitting structure on a first outer surface and a lower surface of the light-emitting structure, respectively; a second electrode pattern configured to apply a common voltage to the first type semiconductor layer of the light-emitting structure on a second outer surface and a lower surface of the light-emitting structure; and an insulating layer between the first electrode pattern and the light-emitting structure and between the second electrode pattern and the light-emitting structure, the insulating layer including a plurality of openings through which the first electrode pattern and the second electrode pattern are connected to the light-emitting structure. Attached Figure Description

[0027] The above and other aspects, features and advantages of the embodiments will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0028] Figure 1A This is a cross-sectional view showing a light-emitting device according to one or more embodiments;

[0029] Figure 1B It is shown Figure 1A Another cross-sectional view of the light-emitting device;

[0030] Figure 1C It is shown Figure 1A A view of the lower surface of the light-emitting device;

[0031] Figure 2 This is a block diagram illustrating a display device including a light-emitting device according to one or more embodiments;

[0032] Figure 3A It is a cross-sectional view showing a portion of a display device including light-emitting devices as viewed from one perspective according to one or more embodiments;

[0033] Figure 3B It is shown Figure 3A Another cross-sectional view of the display device;

[0034] Figure 4 This is a view showing a display device including an optical layer for controlling the light path, according to one or more embodiments;

[0035] Figure 5 This is a view showing a display device including a scattering pattern according to one or more embodiments;

[0036] Figure 6A , Figure 6B , Figure 7A , Figure 7B , Figure 8A , Figure 8B , Figure 9A , Figure 9B , Figure 10A , Figure 10B , Figure 11A , Figure 11B , Figure 12A , Figure 12B , Figure 13A , Figure 13B , Figure 14A and Figure 14B This is a cross-sectional view showing the operations in a method for manufacturing a display device according to an embodiment, wherein... Figure 6A , Figure 7A , Figure 8A , Figure 9A , Figure 10A , Figure 11A , Figure 12A , Figure 13A and Figure 14A It is shown that... Figure 3A The cross-sectional view of the display device shown is a reference diagram related to the manufacturing method. Figure 6B , Figure 7B , Figure 8B , Figure 9B , Figure 10B , Figure 11B , Figure 12B , Figure 13B and Figure 14B It is shown that... Figure 3B The cross-sectional view of the display device shown is a reference diagram of the manufacturing method related to it;

[0037] Figure 15 This is a view showing a display device according to one or more other embodiments;

[0038] Figure 16 This is a view showing a display device according to one or more other embodiments;

[0039] Figure 17A This is a cross-sectional view of a display device as seen from a first perspective, according to one or more other embodiments;

[0040] Figure 17B It shows an observation from another perspective. Figure 17A A cross-sectional view of the display device;

[0041] Figure 17C It is shown that it includes Figure 17A A view of the lower surface of the light-emitting device in the display device;

[0042] Figure 18A , Figure 18B , Figure 19A , Figure 19B , Figure 20A , Figure 20B , Figure 21A , Figure 21B , Figure 22A , Figure 22B , Figure 23A , Figure 23B , Figure 24A and Figure 24B This is a cross-sectional view showing the operations in a method for manufacturing a display device according to an embodiment, wherein... Figure 18A , Figure 19A , Figure 20A , Figure 21A , Figure 22A , Figure 23A and Figure 24A It is shown that... Figure 17A The cross-sectional view of the display device shown is a reference diagram of the manufacturing method related to it, and Figure 18B , Figure 19B , Figure 20B , Figure 21B , Figure 22B , Figure 23B and Figure 24B It is shown that... Figure 17B The cross-sectional view of the display device shown is a reference diagram of the manufacturing method related to it;

[0043] Figure 25A and Figure 25B This is a view showing a display device according to one or more other embodiments;

[0044] Figure 26 This is a schematic view of an electronic device including a display device according to one or more embodiments;

[0045] Figure 27 This is a view illustrating examples of a display device according to one or more embodiments being applied to a mobile device;

[0046] Figure 28 This is a view illustrating examples of a display device applied to a vehicle according to one or more embodiments;

[0047] Figure 29 This is a view illustrating examples of a display device according to one or more embodiments applied to augmented reality (AR) glasses or virtual reality (VR) glasses;

[0048] Figure 30 This is a view illustrating examples of a display device applied to a large sign according to one or more embodiments; and

[0049] Figure 31 This is a view illustrating an example of a display device applied to a display of a wearable device according to one or more embodiments. Detailed Implementation

[0050] Reference will now be made in detail to embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always denote the same elements. In this respect, embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, embodiments are described below only by reference to the accompanying drawings to explain various aspects. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of…” modify the entire list of elements when following it and do not modify any individual element of the list. For example, the expression “at least one of a, b, and c” should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0051] In the following description, embodiments will be illustrated with reference to the accompanying drawings. The embodiments described herein are for illustrative purposes only, and various modifications may be made therein. In the drawings, the same reference numerals denote the same elements, and the dimensions of the elements may be exaggerated for clarity.

[0052] In the following description, when an element is referred to as "above" or "on" another element, it may be in direct contact with the other element at the same time, or it may be above the other element without being in contact with it.

[0053] Although the terms "first" and "second" are used to describe various elements, these terms are only used to distinguish one element from another. These terms do not limit the elements to having different materials or structures.

[0054] Unless otherwise stated, singular terms may include plural forms. It will be further understood that the terms “comprising” and / or “containing…” as used herein indicate the presence of a stated feature or element, but do not preclude the presence or addition of one or more other features or elements.

[0055] In this disclosure, terms such as “unit” or “module” may be used to refer to a unit having at least one function or operation and implemented in hardware, software or a combination of hardware and software.

[0056] The specific implementations described herein are merely examples and do not limit the scope of this disclosure in any way. For the sake of simplicity, conventional electronic configurations, control systems, software, and other functional aspects of the system may be omitted. Furthermore, the line connections or connecting members between elements depicted in the accompanying drawings represent functional connections and / or physical or circuit connections by way of example, and in practical applications, they may be replaced or embodied as various additional functional connections, physical connections, or circuit connections.

[0057] An element referred to by a definite article or demonstrative pronoun can be interpreted as one or more elements, even if it has a singular form.

[0058] Unless explicitly described in sequence or described in reverse, the operations of the method may be performed in the appropriate order. Furthermore, examples or terms (e.g., "such as" and "etc.") are used for descriptive purposes and are not intended to limit the scope of the inventive concept, unless defined by the claims.

[0059] This disclosure provides a light-emitting device, such as a vertical RGB micro light-emitting diode (LED), which achieves improved luminous efficiency by ensuring sufficient light-emitting area without a conductive path. This disclosure also provides a display device incorporating the light-emitting device.

[0060] Figure 1A This is a cross-sectional view showing a light-emitting device 100 according to one or more embodiments. Figure 1B It is shown Figure 1A Another cross-sectional view of the light-emitting device 100. Figure 1C It is shown Figure 1AThe bottom view of the light-emitting device 100 shown.

[0061] refer to Figures 1A to 1C According to one or more embodiments, the light-emitting device 100 may include an LED based on organic materials, and may emit light of a specific wavelength depending on the materials included in the light-emitting device 100. According to one or more embodiments, the light-emitting device 100 may have micro-dimensions. For example, the width W of the light-emitting device 100 in the horizontal direction (X and / or Y direction) may be about 50 μm or less, about 10 μm or less, about 5 μm or less, or about 3 μm or less. Here, the width W of the light-emitting device 100 may refer to the maximum width of the light-emitting device 100 in the horizontal direction (X and / or Y direction).

[0062] According to one or more embodiments, the light-emitting device 100 may include a light-emitting structure 110, wherein multiple light-emitting elements configured to emit light of different wavelengths are monolithically stacked. The transverse cross-section of the light-emitting structure 110, parallel to its horizontal direction (X direction and / or Y direction), may be polygonal, circular, etc. For example, the transverse cross-section of the light-emitting structure 110 may be quadrilateral. As another example, the transverse cross-section of the light-emitting structure 110 may be a quadrilateral with a finely patterned concave-convex shape. The longitudinal cross-section of the light-emitting structure 110, parallel to its vertical direction (thickness direction, e.g., direction Z), may be quadrilateral. For example, the longitudinal cross-section of the light-emitting structure 110 may be trapezoidal.

[0063] The light-emitting structure 110 may have a structure in which a first light-emitting element 10 emitting light of a first wavelength, a second light-emitting element 20 emitting light of a second wavelength different from the first wavelength, and a third light-emitting element 30 emitting light of a third wavelength different from the first and second wavelengths are stacked in the thickness direction (e.g., direction Z) of the light-emitting structure 110. For example, the first light-emitting element 10 may emit blue light, the second light-emitting element 20 may emit green light, and the third light-emitting element 30 may emit red light. As described below, the light-emitting structure 110 may be formed by sequentially monolithically growing the first light-emitting element 10, the second light-emitting element 20, and the third light-emitting element 30 on a single growth substrate 410. Therefore, the light-emitting structure 110 may not include bonding material for connecting the light-emitting elements to each other.

[0064] The first light-emitting element 10 may include a first type semiconductor layer 11, an active layer 12 provided on the first type semiconductor layer 11, and a second type semiconductor layer 13 provided on the active layer 12 in contrast to the first type semiconductor layer 11. The first type semiconductor layer 11, the active layer 12, and the second type semiconductor layer 13 may form a vertically stacked structure.

[0065] The first type semiconductor layer 11 and the second type semiconductor layer 13 may comprise II-VI or III-V compound semiconductor materials, such as nitride semiconductor materials. For example, the first type semiconductor layer 11 and the second type semiconductor layer 13 may comprise at least one nitride semiconductor material selected from indium aluminum gallium nitride (InAlGaN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum nitride (AlN), and indium nitride (InN). The first type semiconductor layer 11 and the second type semiconductor layer 13 may provide electrons and holes to the active layer 12. For this purpose, the first type semiconductor layer 11 may be doped with an n-type dopant, and the second type semiconductor layer 13 may be doped with a p-type dopant. For example, the first type semiconductor layer 11 may comprise silicon (Si), germanium (Ge), tin (Sn), etc., as dopant, and the second type semiconductor layer 13 may comprise magnesium (Mg), zinc (Zn), etc., as dopant. The first type semiconductor layer 11 can supply electrons to the active layer 12, and the second type semiconductor layer 13 can supply holes to the active layer 12.

[0066] An active layer 12 may be provided between a first type semiconductor layer 11 and a second type semiconductor layer 13. The active layer 12 has a quantum well structure in which quantum wells are provided between potential barriers. Light can be generated when electrons and holes supplied from the first type semiconductor layer 11 and the second type semiconductor layer 13 recombine with each other within the quantum wells of the active layer 12. The wavelength of the light generated in the active layer 12 can be determined by the band gap of the material forming the quantum wells of the active layer 12. The active layer 12 may have a single quantum well or a multiple quantum well (MQW) structure, in which multiple quantum wells and multiple potential barriers are arranged alternately. Factors such as the voltage applied to the first light-emitting element 10 and the luminous efficiency of the first light-emitting element 10 can be considered to select the thickness of the active layer 12 in the vertical direction (Z direction) or the number of quantum wells within the active layer 12. The active layer 12 may comprise a group II-VI or group III-V compound semiconductor material, such as a nitride semiconductor material. For example, the active layer 12 may include at least one nitride semiconductor material selected from InGaN, GaN, AlGaN and AlInGaN.

[0067] When the active layer 12 comprises indium (In), the wavelength of light emitted by the active layer 12 can decrease as the indium content of the active layer 12 decreases. For example, the active layer 12 may comprise a nitride semiconductor material such as InGaN or AlInGaN. In this case, when the indium content in the nitride semiconductor material is about 35 atomic percent (at%), the active layer 12 can emit red light with a wavelength of about 630 nm; when the indium content is about 30 at%, the active layer 12 can emit yellow light with a wavelength of about 560 nm; and when the indium content is about 25 at%, the active layer 12 can emit green light with a wavelength of about 520 nm. Furthermore, when the indium content is about 15 at%, the active layer 12 can emit blue light with a wavelength of about 450 nm. For example, the active layer 12 of the first light-emitting element 10 may comprise about 15 at% indium and can emit blue light.

[0068] The second light-emitting element 20 may be provided on the first light-emitting element 10. Similar to the first light-emitting element 10, the second light-emitting element 20 may include a first type semiconductor layer 21, an active layer 22, and a second type semiconductor layer 23 forming a vertically stacked structure. The first type semiconductor layer 21 and the second type semiconductor layer 23 of the second light-emitting element 20 may be the same as the first type semiconductor layer 11 and the second type semiconductor layer 13 of the first light-emitting element 10. For example, the first type semiconductor layer 21 and the second type semiconductor layer 23 of the second light-emitting element 20 may include at least one nitride semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, AlN, and InN.

[0069] The active layer 22 of the second light-emitting element 20 may have a different nitride semiconductor material composition than that of the active layer 12 of the first light-emitting element 10. Therefore, the second light-emitting element 20 can emit light in a different wavelength range than the first light-emitting element 10. The active layer 22 of the second light-emitting element 20 may have a higher indium content than the active layer 12 of the first light-emitting element 10. For example, the active layer 22 of the second light-emitting element 20 may have an indium content of approximately 25 atomic percent (at%) and may emit green light.

[0070] A third light-emitting element 30 may be provided on the second light-emitting element 20. Similar to the first light-emitting element 10 and the second light-emitting element 20, the third light-emitting element 30 may include a first type semiconductor layer 31, an active layer 32, and a second type semiconductor layer 33 forming a vertically stacked structure. The first type semiconductor layer 31 and the second type semiconductor layer 33 of the third light-emitting element 30 are the same as the first type semiconductor layer 11 and the second type semiconductor layer 13 of the first light-emitting element 10; therefore, their repeated description is omitted. The active layer 32 of the third light-emitting element 30 may have a different nitride semiconductor material composition than the active layer 12 of the first light-emitting element 10. For example, the active layer 32 of the third light-emitting element 30 may have an indium content of approximately 35 at% and may emit red light. The lower surface of the light-emitting structure 110 may be represented by S1, and the upper surface of the light-emitting structure 110 may be represented by S2. (See reference...) Figure 1A The surface of the first type semiconductor layer 11 of the first light-emitting element 10 can be the lower surface S1, and the surface of the second type semiconductor layer 33 of the third light-emitting element 30 can be the upper surface S2.

[0071] As the size of the light-emitting element decreases, the current density applied to it increases. This increase in current density reduces the external quantum efficiency (EQE) of the light-emitting element, potentially decreasing its luminous efficiency. According to one or more embodiments, in the light-emitting device 100, first to third light-emitting elements 10, 20, and 30, emitting light of different wavelengths, are stacked in the vertical direction (i.e., in the emission direction, e.g., the Z-axis direction). As a result, the active layers 12, 22, and 32 can have a relatively large area. Because the active layers 12, 22, and 32 have a relatively large area, the current density applied to the first to third light-emitting elements 10, 20, and 30 can be reduced. This reduced current density can increase the EQE and luminous efficiency of the first to third light-emitting elements 10, 20, and 30.

[0072] For example, according to one or more embodiments, the widths of the first to third light-emitting elements 10, 20, and 30 can be increased from the first light-emitting element 10 to the third light-emitting element 30. Here, the term "width" can refer to the average width of each light-emitting element in the horizontal direction (X direction and / or Y direction). For example, the widths of the active layers 12, 22, and 32 can be increased from the first light-emitting element 10 to the third light-emitting element 30. For example, the width of the active layer 12 can be smaller than the width of the active layer 22, and the width of the active layer 22 can be smaller than the width of the active layer 32. Because the luminous efficiency of the active layer 32 of the third light-emitting element 30, which emits red light, is less than the luminous efficiency of the active layers 12 and 22 of the first light-emitting element 10 and the second light-emitting element 20, the difference in luminous efficiency between the first to third light-emitting elements 10, 20, and 30 can be reduced by increasing the active area of ​​the third light-emitting element 30.

[0073] Although key components for the basic operation of the first light-emitting element 10, the second light-emitting element 20, and the third light-emitting element 30 have been described, the implementation is not limited thereto. At least one of the first light-emitting element 10, the second light-emitting element 20, and the third light-emitting element 30 may further include various additional layers to enhance performance. For example, a carrier blocking layer and / or a stress-relieving layer may be further disposed between each of the first type semiconductor layers 11, 21, 31 and each of the active layers 12, 22, 32, and between each of the active layers 12, 22, 32 and each of the second type semiconductor layers 13, 23, 33. Hereinafter, for ease of description, key components for the basic operation of the first to third light-emitting elements 10, 20, and 30 will be described.

[0074] According to one or more embodiments, the light-emitting device 100 may further include a first electrode pattern 130 and a second electrode pattern 140. The first electrode pattern 130 may be provided on the outer surface and lower surface S1 of the light-emitting structure 110, and independently applies voltage to the second type semiconductor layers 13, 23, and 33 of the light-emitting structure 110. The second electrode pattern 140 may be provided on the outer surface and lower surface S1 of the light-emitting structure 110, and applies a common voltage to the first type semiconductor layers 11, 21, and 31 of the light-emitting structure 110. On the outer surface of the light-emitting structure 110, the first electrode pattern 130 may be provided on a first outer surface S3, and the second electrode pattern 140 may be provided on a second outer surface S4, different from the first outer surface S3. For example, when the light-emitting structure 110 has a quadrilateral prism shape, the first electrode pattern 130 may be provided on three outer surfaces of the light-emitting structure 110, and the second electrode pattern 140 may be provided on one outer surface of the light-emitting structure 110.

[0075] When holes are formed in the light-emitting structure 110 to form electrode patterns, the light-emitting area of ​​the active layers 12, 22, and 32 of the light-emitting structure 110 may be reduced. However, since the first electrode pattern 130 and the second electrode pattern 140 of one or more embodiments are provided on the outer surface of the light-emitting structure 110, the first electrode pattern 130 and the second electrode pattern 140 do not affect the emission area of ​​the light-emitting structure 110.

[0076] According to one or more embodiments, the first electrode pattern 130 and the second electrode pattern 140 may extend to the lower surface S1 of the light-emitting structure 110. Because the first electrode pattern 130 and the second electrode pattern 140 are exposed on one surface of the light-emitting structure 110, the first electrode pattern 130 and the second electrode pattern 140 can be more easily coupled to the voltage supply module.

[0077] The light-emitting device 100 may further include an insulating layer 150 surrounding and adjacent to the light-emitting structure 110. The insulating layer 150 may be provided between the first electrode pattern 130 and the light-emitting structure 110, and between the second electrode pattern 140 and the light-emitting structure 110. The insulating layer 150 may include a plurality of openings, including a first opening H1, a second opening H2, a third opening H3, a fourth opening H4, a fifth opening H5, and a sixth opening H6, to allow the first electrode pattern 130 and the second electrode pattern 140 to connect to the light-emitting structure 110. For example, the insulating layer 150 may include a first insulating layer 151 provided on the lower surface S1 of the light-emitting structure 110, a second insulating layer 152 provided on the upper surface S2 of the light-emitting structure 110, a third insulating layer 153 provided on the first outer surface S3 of the light-emitting structure 110, and a fourth insulating layer 154 provided on the second outer surface S4 of the light-emitting structure 110. Insulating layer 150 may include silicon oxide (SiO2), titanium oxide (TiO2), silicon nitride (Si3N4), and aluminum oxide (AlO2). x ), aluminum nitride (AlO) x N y Tantalum oxide (Ta2O5), titanium nitride (TiN), aluminum nitride (AlN), zirconium oxide (ZrO2), titanium aluminum nitride (TiAlN), titanium silicon nitride (TiSiN), hafnium oxide (HfO) x (or a combination thereof).

[0078] The first electrode pattern 130 may include a first electrode 131 electrically connected to a second type semiconductor layer 13 of the first light-emitting element 10 through a first opening H1 of the third insulating layer 153, a second electrode 132 electrically connected to a second type semiconductor layer 23 of the second light-emitting element 20 through a second opening H2 of the third insulating layer 153, and a third electrode 133 electrically connected to a second type semiconductor layer 33 of the third light-emitting element 30 through a third opening H3 of the third insulating layer 153. The first electrode 131, the second electrode 132, and the third electrode 133 may be spaced apart from each other and may provide independent voltages to their corresponding second type semiconductor layers 13, 23, and 33.

[0079] The second electrode pattern 140 can be electrically connected to the first type semiconductor layer 11 of the first light-emitting element 10, the first type semiconductor layer 21 of the second light-emitting element 20, and the first type semiconductor layer 31 of the third light-emitting element 30 through the fourth opening H4, the fifth opening H5, and the sixth opening H6, respectively. The second electrode pattern 140 can be formed as a single layer. However, the implementation is not limited to this. The second electrode pattern 140 can be formed as two or more layers.

[0080] The first electrode pattern 130 and the second electrode pattern 140 may include conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium tin zinc oxide (ITZO), conductive polymer materials such as poly(3,4-ethylenedioxythiophene) (PEDOT), or metallic materials such as silver (Ag), gold (Au), platinum (Pt), nickel (Ni), chromium (Cr) and / or aluminum (Al).

[0081] In the outer surface of the light-emitting structure 110, the first outer surface S3 on which the first electrode pattern 130 is formed and the second outer surface S4 on which the second electrode pattern 140 is formed can have different step patterns.

[0082] The first outer surface S3 may include protrusions C11, C12, and C13 (collectively referred to as C1) that protrude outward from the active layers 12, 22, and 32 of the light-emitting structure 110 compared to the second type semiconductor layers 13, 23, and 33 adjacent to the second type semiconductor layers 13, 23, and 33, and the first type semiconductor layers 11, 21, and 31. For example, at the first outer surface S3, the second type semiconductor layer 13 of the first light-emitting element 10 may protrude outward from the active layer 12 of the first light-emitting element 10 and the first type semiconductor layer 21 of the second light-emitting element 20; the second type semiconductor layer 23 of the second light-emitting element 20 may protrude outward from the active layer 22 of the second light-emitting element 20 and the first type semiconductor layer 31 of the third light-emitting element 30; and the second type semiconductor layer 33 of the third light-emitting element 30 may protrude outward from the active layer 32 of the third light-emitting element 30. As another example, the width of each of the second type semiconductor layers 13, 23, 33 of the light-emitting structure 110 in the horizontal direction (X and / or Y direction) may gradually increase in the vertical direction (Z direction) away from the lower surface S1 of the light-emitting structure 110. For example, each of the second type semiconductor layers 13, 23, 33 may have an inverted trapezoidal cross section, the width of which in the horizontal direction (X and / or Y direction) gradually increases in the vertical direction (Z direction) away from the lower surface S1 of the light-emitting structure 110.

[0083] At least one of the first to third openings H1, H2, and H3 of the insulating layer 150 may be provided on the protrusions C11, C12, and C13 of the first outer surface S3 (e.g., on the outer surfaces of the second type semiconductor layers 13, 23, and 33). For example, on the first outer surface S3, the first opening H1 may be provided on the outer surface of the second type semiconductor layer 13 of the first light-emitting element 10, the second opening H2 may be provided on the outer surface of the second type semiconductor layer 23 of the second light-emitting element 20, and the third opening H3 may be provided on the outer surface of the second type semiconductor layer 33 of the third light-emitting element 30. The first electrode 131 may contact the second type semiconductor layer 13 of the first light-emitting element 10 exposed through the first opening H1, the second electrode 132 may contact the second type semiconductor layer 23 of the second light-emitting element 20 exposed through the second opening H2, and the third electrode 133 may contact the second type semiconductor layer 33 of the third light-emitting element 30 exposed through the third opening H3. The first electrode 131, the second electrode 132, and the third electrode 133 can be provided on the first outer surface S3 of the light-emitting structure 110 and can extend to the lower surface S1 of the light-emitting structure 110.

[0084] At the first outer surface S3, the second type semiconductor layers 13, 23 and 33 of the light-emitting structure 110 protrude outward compared to the adjacent layers. Therefore, the first electrode pattern 130 can more easily contact the second type semiconductor layers 13, 23 and 33 of the light-emitting structure 110.

[0085] The second outer surface S4 may include a recessed portion C2, at which at least one of the first type semiconductor layers 11, 21, and 31 of the light-emitting structure 110 is recessed inward. For example, on the second outer surface S4, the first type semiconductor layer 11 of the first light-emitting element 10 may include multiple stepped recessed regions C21, the first type semiconductor layer 21 of the second light-emitting element 20 may include multiple stepped recessed regions C22, and the first type semiconductor layer 31 of the third light-emitting element 30 may include multiple stepped recessed regions C23. For example, on the second outer surface S4, at least one of the first type semiconductor layers 11, 21, and 31 may include four or more surfaces with different tilt angles relative to the thickness direction (Z direction) of the light-emitting structure 110.

[0086] The recessed portion C2 may be filled with the second electrode pattern 140. At least one of the fourth to sixth openings H4, H5, and H6 of the fourth insulating layer 154 may be provided on the recessed portion C2 of the second outer surface S4 (e.g., on the outer surfaces of the first type semiconductor layers 11, 21, and 31). For example, on the second outer surface S4, the fourth opening H4 may be provided on the recessed region C21 of the first type semiconductor layer 11 of the first light-emitting element 10, the fifth opening H5 may be provided on the recessed region C22 of the first type semiconductor layer 21 of the second light-emitting element 20, and the sixth opening H6 may be provided on the recessed region C23 of the first type semiconductor layer 31 of the third light-emitting element 30. The second electrode pattern 140 may extend to the lower surface S1 of the light-emitting structure 110 while filling the recessed regions C21, C22, and C23 of the first type semiconductor layers 11, 21, and 31 exposed on the second outer surface S4 through the fourth opening H4, the fifth opening H5, and the sixth opening H6.

[0087] On the second outer surface S4, a portion of the first type semiconductor layers 11, 21, and 31 of the light-emitting structure 110 includes a recessed portion C2 recessed into the light-emitting structure 110, and the second electrode pattern 140 is formed as a monolayer filling the recessed portion C2. Therefore, the second electrode pattern 140 can more easily contact the first type semiconductor layers 11, 21, and 31 of the light-emitting structure 110. Furthermore, the second electrode pattern 140 can also contact the side surfaces of the first type semiconductor layers 11, 21, and 31, thus increasing the contact area between the second electrode pattern 140 and the first type semiconductor layers 11, 21, and 31.

[0088] The outer surfaces of the active layers 12, 22, and 32, and the second type semiconductor layers 13, 23, and 33, included in the second outer surface S4, can be tilted at a predetermined angle relative to the thickness direction (Z direction) of the light-emitting structure 110. Here, the predetermined angle can be from about 5 degrees to about 30 degrees.

[0089] In the above embodiments, it has been described that the light-emitting device 100 includes three light-emitting elements configured to emit light of different wavelengths. However, the embodiments are not limited thereto. The light-emitting device 100 may include two light-emitting elements configured to emit light of different wavelengths, or four or more light-emitting elements configured to emit light of different wavelengths. Furthermore, the light-emitting device 100 may emit light in the visible spectrum, and may also emit light in the non-visible spectrum.

[0090] According to one or more embodiments, the light-emitting device 100 is capable of emitting light of different wavelengths, and therefore can be used as a pixel in a display device. The light-emitting device 100 can operate as a single pixel, thus the display device can have a relatively small size and high resolution.

[0091] Figure 2 This is a block diagram illustrating a display device 200 including a light-emitting device 100 according to one or more embodiments. Reference Figure 2 The display device 200 may include a pixel array 210, a scan driver 220, a data driver 230, and a processor 240. The pixel array 210 may include a plurality of pixels P provided in the form of a two-dimensional array, a plurality of scan line groups that transmit scan signals to the pixels P, and a plurality of data line groups that transmit data signals to the pixels P.

[0092] At least one of the pixels P in the pixel array 210 may include the aforementioned light-emitting device 100. For example, at least one of the pixels P may include the light-emitting device 100, a first transistor TR1, a second transistor TR2, a third transistor TR3, and a fourth transistor TR4 electrically connected to the light-emitting device 100. The light-emitting device 100 may include a first light-emitting element 10 that emits blue light, a second light-emitting element 20 that emits green light, and a third light-emitting element 30 that emits red light.

[0093] Each scan line group may include a first scan line SL1, a second scan line SL2, and a third scan line SL3 extending in the X direction. Each of the first scan line SL1, the second scan line SL2, and the third scan line SL3 may be connected to a plurality of pixels P arranged in the X direction. For example, the first scan line SL1 may be electrically connected to the gate electrode G of a first transistor TR1 in pixel P, the second scan line SL2 may be electrically connected to the gate electrode G of a second transistor TR2 in pixel P, and the third scan line SL3 may be electrically connected to the gate electrode G of a third transistor TR3 in pixel P. The first scan line SL1, the second scan line SL2, and the third scan line SL3 may also be connected to a scan driver 220 to receive scan signals from the scan driver 220.

[0094] Each data line group may include a first data line DL1, a second data line DL2, and a third data line DL3 extending in the Y direction. Each of the first data line DL1, the second data line DL2, and the third data line DL3 may be connected to a plurality of pixels P arranged in the Y direction. For example, the first data line DL1 may be electrically connected to the source horizontal line of the first transistor TR1 in pixel P, the second data line DL2 may be electrically connected to the source horizontal line of the second transistor TR2 in pixel P, and the third data line DL3 may be connected to the source horizontal line of the third transistor TR3 in pixel P. The first data line DL1, the second data line DL2, and the third data line DL3 may also be connected to a data driver 230 to receive data signals from the data driver 230.

[0095] The processor 240 can control the operation of the scan driver 220 and the data driver 230 based on the image data to be displayed on the pixel array 210, thereby adjusting the scan signal and data signal provided to each of the pixels P.

[0096] Figure 3A This is a cross-sectional view showing a portion of a display device 200 including a light-emitting device 100 according to one or more embodiments. Figure 3B It is shown Figure 3A Another cross-sectional view of the display device 200.

[0097] refer to Figure 3A and Figure 3B The display device 200 may include a display layer 310, a driving layer 320, and a substrate 330. The display layer 310 includes a plurality of light-emitting devices, the driving layer 320 is configured to drive the light-emitting devices, and the substrate 330 supports the driving layer 320. The driving layer 320 and the substrate 330 may be collectively referred to as a backplate 301.

[0098] Display layer 310 may include light-emitting devices. At least one of the light-emitting devices may include a plurality of light-emitting elements, including a first light-emitting element 10, a second light-emitting element 20, and a third light-emitting element 30 connected to emit light of different wavelengths. From the viewpoint of display device 200, the first light-emitting element 10 may be a component of a first sub-pixel, the second light-emitting element 20 may be a component of a second sub-pixel, and the third light-emitting element 30 may be a component of a third sub-pixel. Since the light emitters have already been described above, a repeated description thereof is omitted.

[0099] The substrate 330 may include an insulating material, such as glass, an organic polymer, or quartz. Furthermore, the substrate 330 may include a flexible material that allows bending or folding and may have a single-layer or multi-layer structure.

[0100] The driving layer 320 may include a buffer layer 321 provided on the substrate 330 and first to fourth transistors TR1, TR2, TR3, and TR4 provided on the buffer layer 321. The driving layer 320 may further include driving voltage wiring, a scan driver 220, a data driver 230, and a processor 240 (e.g., ...). Figure 2 (as shown), but these components are in Figure 3A and Figure 3B Not shown in the image.

[0101] The buffer layer 321 can prevent impurities from diffusing into the first to fourth transistors TR1, TR2, TR3 and TR4. The buffer layer 321 can be provided as a single layer or can have a multilayer structure having at least two layers.

[0102] When the buffer layer 321 has a multilayer structure, the layers of the multilayer structure may include the same material or different materials. Depending on the material and process conditions of the substrate 330, the buffer layer 321 may be omitted.

[0103] The first to fourth transistors TR1, TR2, TR3, and TR4 can drive corresponding light-emitting elements included in the light-emitting elements in the display layer 310. For example, the driving layer 320 may include a first transistor TR1 driving the first light-emitting element 10, a second transistor TR2 driving the second light-emitting element 20, and a third transistor TR3 driving the third light-emitting element 30. The driving layer 320 may also include a fourth transistor TR4 that applies a common voltage to the first to third light-emitting elements 10, 20, and 30. Each of the first to fourth transistors TR1, TR2, TR3, and TR4 may include a semiconductor layer, a gate electrode, a source electrode, and a drain electrode.

[0104] A semiconductor layer may be provided on the buffer layer 321. The semiconductor layer may include a source region in contact with the source electrode and a drain region in contact with the drain electrode. The region between the source region and the drain region may be a channel region.

[0105] The semiconductor layer can be a semiconductor pattern including polycrystalline silicon, amorphous silicon, or oxide semiconductor. The channel region can be an intrinsic semiconductor pattern without dopant. The source and drain regions can be semiconductor patterns with dopant.

[0106] The gate electrode can be provided on the semiconductor layer, and the gate insulating layer is between the gate electrode and the semiconductor layer.

[0107] The source electrode and drain electrode can contact the source region and drain region of the semiconductor layer respectively through contact plugs that penetrate the interlayer insulating layer 323 and the gate insulating layer 322.

[0108] A protective layer 324 may be provided on the first to fourth transistors TR1, TR2, TR3, and TR4. The protective layer 324 may include a first conductive path CV1, a second conductive path CV2, a third conductive path CV3, and a fourth conductive path CV4. A first electrode 131 may be electrically connected to the first transistor TR1 (e.g., the drain of the first transistor TR1) via the first conductive path CV1 and the first electrode pad E1. A second electrode 132 may be electrically connected to the second transistor TR2 (e.g., the drain of the second transistor TR2) via the second conductive path CV2 and the second electrode pad E2. A third electrode 133 may be electrically connected to the third transistor TR3 (e.g., the drain of the third transistor) via the third conductive path CV3 and the third electrode pad E3. Furthermore, a second electrode pattern 140 may be electrically connected to the fourth transistor TR4 (e.g., the drain of the first transistor TR4) via the fourth conductive path CV4 and the fourth electrode pad E4.

[0109] When a driving voltage is applied through the first electrode pattern 130 and a common voltage is applied through the second electrode pattern 140, each of the first to third light-emitting elements 10, 20 and 30 can emit light independently based on the applied voltage.

[0110] Figure 4 This is a view showing a display device 200a including an optical layer 340 configured to adjust the light path, according to one or more embodiments.

[0111] refer to Figure 3B and Figure 4 , Figure 4The display device 200a shown may include an optical layer 340, which is provided on the display layer 310 and configured to adjust the propagation path of light emitted from the display layer 310. The optical layer 340 may include a plurality of microlenses corresponding one-to-one with a plurality of light-emitting devices. Each of the microlenses can adjust the propagation path of light emitted from the corresponding light-emitting device and guide the light in a specific direction. The microlenses have different refractive indices and are therefore able to focus the light emitted from the display layer 310. Therefore, the display device 200a can generate an image with a narrow viewing angle. Furthermore, the optical layer 340 can magnify or reduce the image generated by the display layer 310 depending on the application of the display device 200a. Additionally, the optical layer 340 can prevent the mixing of light beams emitted from adjacent light-emitting devices.

[0112] Figure 5 This is a view showing a display device 200b including a scattering pattern 350 according to one or more embodiments.

[0113] refer to Figure 4 and Figure 5 , Figure 5 The display device 200b shown may further include a scattering pattern 350, which is provided on the display layer 310 and configured to scatter light emitted from the display layer 310. The scattering pattern 350 may be provided on a second insulating layer 152, which is provided on the upper surface of the light-emitting structure. An optical layer 340 may be provided on the scattering pattern 350. Among the light beams emitted from the active layers 12, 22, and 32 of the light-emitting structure, the beam incident on the second insulating layer 152 at an angle of incidence greater than the critical angle passes through the second insulating layer 152 and propagates outward, while the other beams are totally internally reflected back into the light-emitting structure. Light trapped inside the display layer 310 by total internal reflection can be one of the factors reducing the light extraction efficiency of the display layer 310. For example, the scattering pattern 350 may be a raised or recessed pattern capable of scattering light. Light emitted from the active layers 12, 22, and 32 of the light-emitting structure onto the scattering pattern 350 is scattered by the scattering pattern 350. As a result, the light emitted from the display layer 310 exhibits a uniform light intensity distribution. Furthermore, when light trapped inside the display layer 310 due to total internal reflection is incident on the scattering pattern 350, the light is scattered, thus changing the direction of light propagation. As described above, the scattering pattern 350 scatters the light trapped inside the display layer 310 by total internal reflection, thereby changing the direction of light propagation. Consequently, light is output from the display layer 310. This makes it possible to realize a display device with improved light extraction efficiency.

[0114] Figures 6A to 14B It is a cross-sectional view showing the operations in a method of manufacturing a display device according to one or more embodiments. Figure 6A , Figure 7A , Figure 8A , Figure 9A , Figure 10A , Figure 11A , Figure 12A , Figure 13A and Figure 14A It is shown that... Figure 3A The cross-sectional view of the display device 200 shown is a reference diagram for the manufacturing method. Figure 6B , Figure 7B , Figure 8B , Figure 9B , Figure 10B , Figure 11B , Figure 12B , Figure 13B and Figure 14B It is shown that... Figure 3B The cross-sectional view of the display device 200 shown is a reference diagram for the manufacturing method.

[0115] refer to Figure 6A and Figure 6B A light-emitting structure 110 can be formed on the growth substrate 410 (see reference). Figure 8A The growth substrate 410 can be used as a layer for growing the light-emitting structure 110. The growth substrate 410 can be a substrate used for semiconductor single-crystal growth, such as a silicon (Si) substrate, a silicon carbide (SiC) substrate, or a sapphire substrate. Furthermore, the growth substrate 410 can be a substrate comprising materials suitable for the growth of the light-emitting structure 110 (such as aluminum nitride (AlN), aluminum gallium nitride (AlGaN), zinc oxide (ZnO), gallium arsenide (GaAs), magnesium aluminum oxide (MgAl2O4), magnesium oxide (MgO), lithium aluminum oxide (LiAlO2), lithium gallium oxide (LiGaO2), or gallium nitride (GaN)). A buffer layer can be provided on the surface of the growth substrate 410 for the epitaxial growth of the light-emitting structure 110, and the light-emitting structure can be grown on the buffer layer.

[0116] A first light-emitting element 10, a second light-emitting element 20, and a third light-emitting element 30 can be formed sequentially and vertically on a growth substrate 410. For example, a first type semiconductor layer 11, an active layer 12, and a second type semiconductor layer 13 of the first light-emitting element 10 can be sequentially grown on the growth substrate 410. Then, a first type semiconductor layer 21, an active layer 22, and a second type semiconductor layer 23 of the second light-emitting element 20 can be sequentially grown on the second type semiconductor layer 13 of the first light-emitting element 10. Then, a first type semiconductor layer 31, an active layer 32, and a second type semiconductor layer 33 of the third light-emitting element 30 can be sequentially grown on the second type semiconductor layer 23 of the second light-emitting element 20.

[0117] Among the first to third light-emitting elements 10, 20, and 30, the active layer 12 of the first light-emitting element 10 has the lowest indium content, and the active layer 32 of the third light-emitting element 30 has the highest indium content. For example, the indium content in the active layer 12 of the first light-emitting element 10 is less than the indium content in the active layer 22 of the second light-emitting element 20, and the indium content in the active layer 22 of the second light-emitting element 20 is less than the indium content in the active layer 32 of the third light-emitting element 30. As the indium content decreases, the growth temperature of the nitride semiconductor increases. Therefore, an active layer requiring a relatively high growth temperature can be grown first, and an active layer requiring a relatively low growth temperature can be grown later. When an active layer with a relatively high indium content is grown first and an active layer with a relatively low indium content is grown later, the active layer with the relatively high indium content may degrade. According to one or more embodiments, the growth sequence of the light-emitting structure 110 can prevent the degradation of the active layer 32 of the third light-emitting element 30, which has a relatively high indium content.

[0118] According to one or more embodiments, the light-emitting structure 110 is monolithically formed by sequentially forming a first light-emitting element 10, a second light-emitting element 20 and a third light-emitting element 30, so that bonding material may not be provided between the first to third light-emitting elements 10, 20 and 30.

[0119] The light-emitting structure 110 can be formed using methods such as metal-organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE).

[0120] A second insulating layer 152 and a sacrificial layer 420 may be further formed on the upper surface of the light-emitting structure 110. The second insulating layer 152 may include SiO2, etc., and the sacrificial layer 420 may include silicon (Si), silicon carbide (SiC), sapphire, etc. The second insulating layer 152 and the sacrificial layer 420 may be formed by chemical vapor deposition (CVD) process.

[0121] refer to Figure 7A and Figure 7B After the light-emitting structure 110 is reversed in the vertical direction (Z direction), the growth substrate 410 is removed, and a first insulating layer 151 can be formed on the exposed surface of the first type semiconductor layer 11 of the first light-emitting element 10. Before forming the first insulating layer 151, a chemical mechanical polishing (CMP) process can be performed to planarize the exposed surface of the first light-emitting element 10.

[0122] refer to Figure 8A and Figure 8BA portion of the outer surface of the light-emitting structure 110 can be etched using a mesa to form a first outer surface S3. The first outer surface S3 can be tilted at an angle relative to the thickness direction (Z direction) of the light-emitting structure 110. For example, the light-emitting structure 110 is etched such that the width of the light-emitting structure 110 in the horizontal direction (X direction and / or Y direction) can gradually increase in the vertical direction (Z direction) from the first light-emitting element 10 toward the third light-emitting element 30. Etching can be performed using a dry etching process or a wet etching process. For example, a dry etching process can use inductively coupled plasma (ICP).

[0123] refer to Figure 9A and Figure 9B Protrusions C11, C12, and C13 (collectively referred to as C1) extending outward from the second type semiconductor layers 13, 23, and 33 can be formed on the first outer surface S3. The protrusions C11, C12, and C13 can be formed by selectively etching the first type semiconductor layers 11, 21, and 31, and the active layers 12, 22, and 32, respectively, from the first outer surface S3 of the light-emitting structure 110. Etching can be performed using an OH-based etchant, such as potassium hydroxide (KOH) solution or tetramethylammonium hydroxide (TMAH) solution. The etching rate of the OH-based etchant on the GaN-based material depends on whether the GaN base material is doped and the type of dopant used. For example, the OH-based etchant etches n-GaN at a significantly higher rate than p-GaN. The OH-based etchant etches n-GaN at a very high rate but etches p-GaN at a negligible low rate. Therefore, the first conductivity type material layer (which is an n-GaN layer) and active layers 12, 22 and 32 can be selectively etched.

[0124] refer to Figure 10A and Figure 10B The remaining area of ​​the outer surface of the light-emitting structure 110 can be etched by a mesa to form a second outer surface S4. The second outer surface S4 can be tilted at an angle relative to the thickness direction (Z direction) of the light-emitting structure 110. For example, the etching is performed such that the width of the light-emitting structure 110 in the horizontal direction (X direction and / or Y direction) gradually increases in the vertical direction (Z direction) from the first light-emitting element 10 toward the third light-emitting element 30. The etching can be performed using a dry etching process. For example, an ICP dry etching process can be used.

[0125] The third insulating layer 153 and the fourth insulating layer 154 can be formed on the outer surfaces of the light-emitting structure 110 (i.e., on the first outer surface S3 and the second outer surface S4, respectively). The third insulating layer 153 and the fourth insulating layer 154 can comprise the same material and can be formed using the same process. The third insulating layer 153 and the fourth insulating layer 154 can be formed by sputtering, atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), CVD, PECVD, physical vapor deposition (PVD), another known method, or a combination thereof. According to one or more embodiments, the third insulating layer 153 and the fourth insulating layer 154 can comprise a transparent insulating material and are formed by ALD.

[0126] refer to Figure 11A and Figure 11B Multiple openings, including first to sixth openings H1, H2, H3, H4, H5, and H6, can be formed in the third insulating layer 153 and the fourth insulating layer 154, and a recessed portion C2 can be formed in the second outer surface S4 of the light-emitting structure 110. For example, the second type semiconductor layers 13, 23, and 33 of the light-emitting structure 110 can be exposed by forming the first to third openings H1, H2, and H3 in the third insulating layer 153 provided on the first outer surface S3 of the light-emitting structure 110. Furthermore, the first type semiconductor layers 11, 21, and 31 of the light-emitting structure 110 can be exposed by forming the fourth to sixth openings H4, H5, and H6 in the fourth insulating layer 154 provided on the second outer surface S4 of the light-emitting structure 110. The recessed portion C2 can be formed in the first type semiconductor layers 11, 21, and 31 by etching the exposed portions of the first type semiconductor layers 11, 21, and 31. The first to sixth openings H1, H2, H3, H4, H5 and H6, as well as the recessed portions C2 (C21, C22 and C23), can be formed using a dry etching process.

[0127] refer to Figure 12A and Figure 12BA first electrode pattern 130 and a second electrode pattern 140 can be formed on the light-emitting structure 110. The first electrode pattern 130 can be formed on the third insulating layer 153 and the first insulating layer 151 by forming a first electrode 131 that contacts the second type semiconductor layer 13 of the first light-emitting element 10 through a first opening H1, a second electrode 132 that contacts the second type semiconductor layer 23 of the second light-emitting element 20 through a second opening H2, and a third electrode 133 that contacts the second type semiconductor layer 33 of the third light-emitting element 30 through a third opening H3. The second electrode pattern 140 can be formed on the fourth insulating layer 154 and the first insulating layer 151, such that the second electrode pattern 140 can contact the first type semiconductor layers 11, 21 and 31 of the light-emitting structure 110 through the fourth opening H4, the fifth opening H5 and the sixth opening H6. The first electrode pattern 130 and the second electrode pattern 140 may comprise a transparent conductive material such as ITO, a metal such as aluminum (Al), titanium (Ti), platinum (Pt), silver (Ag), gold (Au), palladium (Pd), or titanium-tungsten (TiW), or combinations thereof. The first electrode pattern 130 and the second electrode pattern 140 may be formed using methods such as sputtering, ALD, PEALD, CVD, PECVD, PVD, another method, or combinations thereof. According to one or more embodiments, the first electrode pattern 130 and the second electrode pattern 140 may be formed using ALD.

[0128] refer to Figure 13A and Figure 13B After the first electrode pattern 130 and the second electrode pattern 140 are bonded to the backplate 301, the sacrificial layer 420 can be removed. The backplate 301 may include a first transistor TR1, a second transistor TR2, and a third transistor TR3 that drive the first light-emitting element 10, the second light-emitting element 20, and the third light-emitting element 30, respectively. Furthermore, the backplate 301 may include a fourth transistor TR4 that applies a common voltage to the light-emitting structure 110. First electrode pads E1, E2, E3, and E4 are disposed on the surface of the backplate 301 and electrically connected to the first transistor TR1, the second transistor TR2, the third transistor TR3, and the fourth transistor TR4, respectively. The first electrode pads E1, E2, E3, and E4 are connected one-to-one to the first electrode 131, the second electrode 132, the third electrode 133, and the second electrode pattern 140; therefore, the backplate 301 can be bonded to the light-emitting device 100. In addition to the first to fourth transistors TR1, TR2, TR3 and TR4, the backplane 301 may also include various circuit modules.

[0129] refer to Figure 14A and Figure 14BA scattering pattern 350 can be formed on the second insulating layer 152, and an optical layer 340 can be formed on the scattering pattern 350, thereby forming Figure 5 The display device 200b shown has an optical layer 340 that can adjust the propagation path of the light generated in the light-emitting structure 110. Although... Figure 14A and Figure 14B Microlenses are shown as optical elements, but implementations are not limited to this. For example, fine structures such as metastructures can be provided as optical elements.

[0130] Figure 15 This is a view illustrating a display device 200c according to one or more other embodiments. (Comparison) Figure 15 and Figure 3B The second electrode pattern 140 can contact the first type semiconductor layer 11 of the first light-emitting element 10 at the lower surface of the first light-emitting element 10. The first type semiconductor layer 11 of the first light-emitting element 10 is not partially etched, thus simplifying the etching process.

[0131] Figure 16 This is a view showing a display device 200d according to one or more other embodiments. (Comparison) Figure 16 and Figure 15 The second outer surface S4 of the light-emitting structure 110 can be formed by a combination of a horizontal surface and a vertical surface relative to the thickness direction (Z direction) of the light-emitting structure 110. The second electrode pattern 140 can contact the lower surface of the first type semiconductor layers 11, 21 and 31.

[0132] Figure 17A This is a cross-sectional view of the display device 200e from a first perspective, according to one or more other embodiments. Figure 17B It is shown from another perspective Figure 17A A cross-sectional view of the display device 200e, and Figure 17C It is shown that it includes Figure 17A A view of the lower surface of the light-emitting device 100 in the display device 200e shown. Figure 17A , Figure 17B and Figure 17C In the middle, used with Figure 1A , Figure 1B and Figure 1C In the accompanying drawings, the same reference numerals indicate parts that have essentially the same structure and effect; therefore, their repeated descriptions are omitted.

[0133] refer to Figure 17A , Figure 17B and Figure 17CThe light-emitting structure 110 can be formed by sequentially stacking a third light-emitting element 30, a second light-emitting element 20, and a first light-emitting element 10 on a backplate 301. Each of the first to third light-emitting elements 10, 20, and 30 can be formed by sequentially stacking a second type semiconductor layer 13, 23, or 33, an active layer 12, 22, or 32, and a first type semiconductor layer 11, 21, or 31 above the backplate 301.

[0134] The third electrode 133 of the first electrode pattern 130 can be provided on the lower surface S1 of the light-emitting structure 110. The third electrode 133 can be in direct contact with the second type semiconductor layer 33 of the third light-emitting element 30 at the lower surface S1 of the light-emitting structure 110. Here, the lower surface of the second type semiconductor layer 33 of the third light-emitting element 30 can be the lower surface S1 of the light-emitting structure 110. The first electrode 131 and the second electrode 132 of the first electrode pattern 130 can be provided on the first outer surface S3 of the light-emitting structure 110 and extend to the lower surface S1. The first electrode 131 can be in contact with the second type semiconductor layer 13 of the first light-emitting element 10 at the first outer surface S3 of the light-emitting structure 110, and the second electrode 132 can be in contact with the second type semiconductor layer 23 of the second light-emitting element 20 at the first outer surface S3 of the light-emitting structure 110.

[0135] The second electrode pattern 140 may include a fourth electrode 141 and a fifth electrode 142 provided on the second outer surface S4 of the light-emitting structure 110 and extending to the lower surface S1. The fourth electrode 141 and the fifth electrode 142 are electrically connected to the fifth transistor TR41 and the sixth transistor TR42 through a fifth conductive path CV41 and a fifth electrode pad E41, and a sixth conductive path CV42 and a sixth electrode pad E42, respectively. When the light-emitting structure 110 has a quadrilateral cross-sectional shape in a direction perpendicular to the thickness direction (Z direction) of the light-emitting structure 110, the second electrode pattern 140 can be formed on both side surfaces because the third electrode 133 is provided on the lower surface S1 of the light-emitting structure 110. Power efficiency can be improved by increasing the contact area between the second electrode pattern 140 and the first type semiconductor layers 11, 21, 31 of the light-emitting structure 110.

[0136] Figures 18A to 24B This is a cross-sectional view showing the operations in the method of manufacturing the display device 200e according to the embodiment. Figure 18A , Figure 19A , Figure 20A , Figure 21A , Figure 22A , Figure 23A and Figure 24A It is shown that... Figure 17A The cross-sectional view of the display device 200e shown is a reference diagram for the manufacturing method. Figure 18B , Figure 19B , Figure 20B , Figure 21B , Figure 22B , Figure 23B and Figure 24B It is shown that... Figure 17B The cross-sectional view of the display device 200e shown is a reference diagram for the manufacturing method.

[0137] refer to Figure 18A and Figure 18B A light-emitting structure 110 can be formed on the growth substrate 410. The growth substrate 410 can be a layer used to grow a light-emitting device.

[0138] A first light-emitting element 10, a second light-emitting element 20, and a third light-emitting element 30 can be formed sequentially and vertically on a growth substrate 410. For example, a first type semiconductor layer 11, an active layer 12, and a second type semiconductor layer 13 of the first light-emitting element 10 can be sequentially grown on the growth substrate 410. Then, a first type semiconductor layer 21, an active layer 22, and a second type semiconductor layer 23 of the second light-emitting element 20 can be sequentially grown on the second type semiconductor layer 13 of the first light-emitting element 10. Then, a first type semiconductor layer 31, an active layer 32, and a second type semiconductor layer 33 of the third light-emitting element 30 can be sequentially grown on the second type semiconductor layer 23 of the second light-emitting element 20.

[0139] Among the first to third light-emitting elements 10, 20, and 30, the active layer 12 of the first light-emitting element 10 has the lowest indium content, and the active layer 32 of the third light-emitting element 30 has the highest indium content. For example, the indium content in the active layer 12 of the first light-emitting element 10 is less than the indium content in the active layer 22 of the second light-emitting element 20, and the indium content in the active layer 22 of the second light-emitting element 20 is less than the indium content in the active layer 32 of the third light-emitting element 30. As the indium content decreases, the growth temperature of the nitride semiconductor increases. Therefore, an active layer requiring a relatively high growth temperature can be grown first, and an active layer requiring a relatively low growth temperature can be grown later. When an active layer with a relatively high indium content is grown first and an active layer with a relatively low indium content is grown later, the active layer with the relatively high indium content may degrade. According to one or more embodiments, the growth sequence of the light-emitting structure 110 can prevent the degradation of the active layer 32 of the third light-emitting element 30 (which has a relatively high indium content).

[0140] A second insulating layer 152 may be further formed on the upper surface of the light-emitting structure 110. The second insulating layer 152 may include SiO2 or the like and may be formed by a CVD process.

[0141] refer to Figure 19A and Figure 19BA portion of the outer surface of the light-emitting structure 110 can be etched to form a first outer surface S3. The first outer surface S3 may include a protrusion C1, at which the second type semiconductor layers 13, 23, and 33 protrude outwards. The first outer surface S3 can be formed by etching a portion of the outer surface of the light-emitting structure 110 at an angle relative to the thickness direction (Z direction) of the light-emitting structure 110. Furthermore, the protrusion C1 can be formed by selectively etching the first type semiconductor layers 11, 21, and 31, as well as the active layers 12, 22, and 32, from the first outer surface S3 of the light-emitting structure 110.

[0142] refer to Figure 20A and Figure 20B Another portion of the outer surface of the light-emitting structure 110 can be etched by a mesa to form a second outer surface S4. The second insulating layer 152 is also etched to expose the second type semiconductor layer 33 of the third light-emitting element 30. Furthermore, the third insulating layer 153 can be formed on the first outer surface S3 and the second outer surface S4 of the light-emitting structure 110, and on the second type semiconductor layer 33 of the third light-emitting element 30. The second outer surface S4 can be tilted at an angle relative to the thickness direction (Z direction) of the light-emitting structure 110. For example, the light-emitting structure 110 is etched such that the width of the light-emitting structure 110 in the horizontal direction (X direction and / or Y direction) can gradually decrease in the vertical direction (Z direction) from the first light-emitting element 10 toward the third light-emitting element 30. The third insulating layer 153 can be formed on the outer surface of the light-emitting structure 110 (that is, on both the first outer surface S3 and the second outer surface S4 of the light-emitting structure 110).

[0143] refer to Figure 21A and Figure 21B Multiple openings, including the first to sixth openings H1, H2, H3, H4, H5, and H6, can be formed in the third insulating layer 153 to expose some areas of the light-emitting structure 110, and a recessed portion C2 can be formed in the second outer surface S4 of the light-emitting structure 110. For example, the second type semiconductor layers 13 and 23 of the light-emitting structure 110 can be exposed by forming the first opening H1 and the second opening H2 in the third insulating layer 153 provided on the first outer surface S3 of the light-emitting structure 110. Furthermore, the second type semiconductor layer 33 of the third light-emitting element 30 can be exposed by forming the third opening H3 in the third insulating layer 153 provided on the upper surface of the light-emitting structure 110. The first type semiconductor layers 11, 21, and 31 of the light-emitting structure 110 can be exposed by forming the fourth to sixth openings H4, H5, and H6 in the third insulating layer 153 provided on the second outer surface S4 of the light-emitting structure 110. Furthermore, recessed portions C2 can be formed in the first type semiconductor layers 11, 21, and 31 by further etching portions of the first type semiconductor layers 11, 21, and 31.

[0144] refer to Figure 22A and Figure 22B A first electrode pattern 130 and a second electrode pattern 140 can be formed on the light-emitting structure 110. A first electrode 131 and a second electrode 132 can be formed on the third insulating layer 153. The first electrode 131 contacts the second type semiconductor layer 13 of the first light-emitting element 10 through a first opening H1, and the second electrode 132 contacts the second type semiconductor layer 23 of the second light-emitting element 20 through a second opening H2. Furthermore, a third electrode 133 can be formed, and the third electrode 133 contacts the second type semiconductor layer 33 of the third light-emitting element 30 through a third opening H3.

[0145] A second electrode pattern 140 can be formed on the third insulating layer 153. The second electrode pattern 140 contacts the first type semiconductor layers 11, 21 and 31 of the light-emitting structure 110 through the fourth opening H4, the fifth opening H5 and the sixth opening H6.

[0146] refer to Figure 23A and Figure 23B The first electrode pattern 130 and the second electrode pattern 140 can be bonded to the back plate 301.

[0147] refer to Figure 24A and Figure 24B A scattering pattern 350 can be formed on the first type of semiconductor layer 11 of the first light-emitting element 10, and an optical layer 340 can be formed on the scattering pattern 350. The optical layer 340 can adjust the propagation path of the light generated in the light-emitting structure 110. Although Figure 24A and Figure 24B Microlenses are shown as optical elements, but implementations are not limited to this. For example, fine structures such as metastructures can be formed as optical elements.

[0148] Figure 25A and Figure 25B This is a view illustrating a display device 200f according to one or more other embodiments. (Comparison) Figure 25A and Figure 25B and Figure 17A and Figure 17B The second outer surface S4 of the light-emitting structure 110 can be formed by a combination of a horizontal surface and a vertical surface relative to the thickness direction (Z direction) of the light-emitting structure 110. The second electrode pattern 140 can contact the lower surface of each of the first type semiconductor layers 11, 21 and 31.

[0149] In each of the aforementioned display devices 200, 200a, 200b, 200c, 200d, 200e, and 200f, pixels capable of providing blue, green, and red light using only a single light-emitting device 100 can be implemented. Therefore, display devices 200, 200a, 200b, 200c, 200d, 200e, and 200f can provide ultra-high resolution images and have a relatively small size. Display devices 200, 200a, 200b, 200c, 200d, 200e, and 200f can be applied to various electronic devices with display functions.

[0150] Figure 26 This is a schematic view of an electronic device 500 including a display device. (Reference) Figure 26 The electronic device 500 may include a display panel 510 and a controller (e.g., at least one processor) 520. The display panel 510 may be combined with any of the aforementioned display devices 200, 200a, 200b, 200c, 200d, 200e, and 200f. The controller 520 may control the display panel 510 based on image signals.

[0151] Figure 27 An example of a display device 1100 according to one or more embodiments applied to a mobile device 1000 is shown. The mobile device 1000 may include the display device 1100. The display device 1100 may include any one of the display devices 200, 200a, 200b, 200c, 200d, 200e, and 200f of the embodiments. The display device 1100 may have a foldable structure and may be implemented as, for example, a multi-fold display. Although Figure 27 The mobile device 1000 shown includes a foldable display, but the mobile device 1000 may include a flat panel display.

[0152] Figure 28 Examples of a display device applied to a vehicle according to one or more embodiments are shown. The display device can be implemented as an in-vehicle head-up display. The in-vehicle head-up display may include a display device 1250 and at least one optical path changing member 1200, wherein the display device 1250 is provided in a region of the vehicle, and the at least one optical path changing member 1200 changes the optical path for the driver to view an image generated by the display device 1250. The display device 1250 may include any one of the display devices 200, 200a, 200b, 200c, 200d, 200e, and 200f of the embodiments.

[0153] Figure 29An example of a display device applied to augmented reality glasses 1300 or virtual reality glasses 1300 is shown. Augmented reality glasses 1300 may include a projection system 1310 configured to form an image and at least one element 1350 configured to direct the image from the projection system 1310 to the user's eyes. The projection system 1310 may include any one of the display devices 200, 200a, 200b, 200c, 200d, 200e, and 200f of the embodiments.

[0154] Figure 30 Examples of a display device according to one or more embodiments applied to a large signboard 1400 are shown. The signboard 1400 can be used for outdoor advertising displaying digital information, and the advertising content can be controlled via a communication network. The signboard 1400 can be implemented using any of the display devices 200, 200a, 200b, 200c, 200d, 200e, and 200f, for example, according to the embodiments described.

[0155] Figure 31 An example of a display device according to one or more embodiments applied to a display 1500 of a wearable device is shown. The display 1500 of the wearable device can be implemented by any of the display devices 200, 200a, 200b, 200c, 200d, 200e and 200f that employ the embodiments.

[0156] The display devices 200, 200a, 200b, 200c, 200d, 200e and 200f of the embodiments can be applied to various products, such as rollable televisions (TVs) or stretchable displays.

[0157] According to one or more embodiments, the light-emitting device can emit light of different wavelengths.

[0158] According to one or more embodiments, the light-emitting device is formed by vertically stacking multiple light-emitting elements, and thus can have a relatively large active area for relatively high luminous efficiency.

[0159] According to one or more embodiments, electrode patterns can be provided on the lateral surface of the light-emitting device without conductive path structures, thus allowing the light-emitting device to have a relatively large area for high luminous efficiency.

[0160] The light-emitting device described in this embodiment can be used to realize a display device with improved luminous efficiency.

[0161] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims and their equivalents.

[0162] This application claims priority to Korean Patent Application No. 10-2024-0197375, filed on December 26, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A display device, comprising: The display layer includes multiple light-emitting devices; as well as The driving layer is configured to drive the plurality of light-emitting devices. At least one of the plurality of light-emitting devices includes: A light-emitting structure includes a first light-emitting element, a second light-emitting element, and a third light-emitting element on the driving layer. The first light-emitting element, the second light-emitting element, and the third light-emitting element are configured to emit light of different wavelengths, and each of the first light-emitting element, the second light-emitting element, and the third light-emitting element includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. A first electrode pattern is configured to apply independent voltages to the second type semiconductor layer of the light-emitting structure on the first outer surface and the lower surface of the light-emitting structure, respectively. A second electrode pattern, on the second outer surface and the lower surface of the light-emitting structure, is configured to apply a common voltage to the first type of semiconductor layer of the light-emitting structure; and An insulating layer is provided between the first electrode pattern and the light-emitting structure, and between the second electrode pattern and the light-emitting structure. The insulating layer includes a plurality of openings through which the first electrode pattern and the second electrode pattern are connected to the light-emitting structure. The first outer surface includes a protruding portion, and the second type semiconductor layer of the light-emitting structure protrudes from the first type semiconductor layer and the active layer, which are respectively adjacent to the second type semiconductor layer, at the protruding portion.

2. The display device according to claim 1, wherein the first type semiconductor layer is an n-type semiconductor layer and the second type semiconductor layer is a p-type semiconductor layer.

3. The display device according to claim 1, wherein the first electrode pattern comprises: The first electrode is connected to the second type semiconductor layer of the first light-emitting element through a first opening in the insulating layer; The second electrode is connected to the second type of semiconductor layer of the second light-emitting element through the second opening of the insulating layer; as well as The third electrode is connected to the second type of semiconductor layer of the third light-emitting element through the third opening in the insulating layer. The first electrode, the second electrode, and the third electrode are spaced apart from each other.

4. The display device according to claim 3, wherein at least one of the first opening, the second opening and the third opening is on the protruding portion.

5. The display device according to claim 1, wherein the second outer surface includes a recessed portion, and at least one of the first type semiconductor layers of the light-emitting structure is recessed into the light-emitting structure at the recessed portion.

6. The display device according to claim 5, wherein the second electrode pattern contacts at least one of the first type of semiconductor layers of the light-emitting structure at the recessed portion.

7. The display device of claim 6, wherein the second electrode pattern contacts the outer surface of at least one of the first type of semiconductor layers at the recessed portion.

8. The display device of claim 6, wherein the second electrode pattern contacts the lower surface of at least one of the first type of semiconductor layers at the recessed portion.

9. The display device according to claim 6, wherein the second electrode pattern contacts the first type semiconductor layer of the first light-emitting element through a fourth opening of the insulating layer, contacts the first type semiconductor layer of the second light-emitting element through a fifth opening of the insulating layer, and contacts the first type semiconductor layer of the third light-emitting element through a sixth opening of the insulating layer.

10. The display device according to claim 9, wherein at least one of the fourth opening, the fifth opening, and the sixth opening is on the recessed portion.

11. The display device of claim 9, wherein the fourth opening is on the lower surface of the first type of semiconductor layer of the first light-emitting element.

12. The display device according to claim 1, wherein In each of the first light-emitting element, the second light-emitting element, and the third light-emitting element, the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially stacked from the driving layer.

13. The display device according to claim 1, wherein the width of the light-emitting structure in the horizontal direction gradually increases in the vertical direction from the first light-emitting element toward the third light-emitting element.

14. The display device according to claim 1, wherein a first wavelength of light emitted by the first light-emitting element is less than a second wavelength of light emitted by the second light-emitting element, and the second wavelength of light is less than a third wavelength of light emitted by the third light-emitting element.

15. The display device of claim 1, wherein the width of each of the second type semiconductor layers of the light-emitting structure gradually increases in the horizontal direction away from the driving layer in the vertical direction.

16. The display device of claim 1, further comprising an optical layer on the display layer and configured to control the propagation path of light emitted from the display layer.

17. The display device according to claim 16, wherein the optical layer comprises a plurality of microlenses corresponding one-to-one with the plurality of light-emitting devices.

18. The display device of claim 1, wherein the display layer further comprises a scattering pattern configured to scatter light emitted from the display layer.

19. A method of manufacturing a display device, the method comprising: A light-emitting structure is formed by sequentially and monolithically stacking a first light-emitting element, a second light-emitting element, and a third light-emitting element on a growth substrate. The first light-emitting element, the second light-emitting element, and the third light-emitting element are configured to emit light of different wavelengths, and each of the first light-emitting element, the second light-emitting element, and the third light-emitting element includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. A protrusion is formed on the first outer surface of the light-emitting structure, and the second type semiconductor layer of the light-emitting structure protrudes outward from the first type semiconductor layer and the active layer, which are respectively adjacent to the second type semiconductor layer, at the protrusion; A recessed portion is formed on the second outer surface of the light-emitting structure and is recessed into the first type of semiconductor layer of the light-emitting structure. A first electrode pattern and a second electrode pattern are formed, wherein the first electrode pattern contacts the second type of semiconductor layer through the protrusion, and the second electrode pattern contacts the first type of semiconductor layer through the recessed portion; as well as The first electrode pattern and the second electrode pattern are bonded to the back plate.

20. An electronic device comprising: The display panel includes: The display layer includes multiple light-emitting devices; and A driving layer configured to drive the plurality of light-emitting devices; and At least one processor is configured to control the display panel based on image signals. At least one of the plurality of light-emitting devices includes: A light-emitting structure includes a first light-emitting element, a second light-emitting element, and a third light-emitting element on the driving layer. The first light-emitting element, the second light-emitting element, and the third light-emitting element are configured to emit light of different wavelengths, and each of the first light-emitting element, the second light-emitting element, and the third light-emitting element includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. A first electrode pattern is configured to apply independent voltages to the second type semiconductor layer of the light-emitting structure on the first outer surface and the lower surface of the light-emitting structure, respectively. A second electrode pattern, on the second outer surface and the lower surface of the light-emitting structure, is configured to apply a common voltage to the first type of semiconductor layer of the light-emitting structure; and An insulating layer is provided between the first electrode pattern and the light-emitting structure, and between the second electrode pattern and the light-emitting structure. The insulating layer includes a plurality of openings through which the first electrode pattern and the second electrode pattern are connected to the light-emitting structure.

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