Apparatus and method for manufacturing a composite

Abstract

The present invention relates to an apparatus (1) and method for manufacturing a composite having at least one functional layer or for further application in manufacturing electronic or optoelectronic structural elements or solid-state batteries. The apparatus (1) includes a processing cavity (3), a first material source (4) oriented toward a substrate (2) receptacle within the processing cavity (3), and an energy beam source (5), wherein a first material flow (6) is generated by means of the first material source (4) and an energy beam (7) is generated by means of the energy beam source (5). Furthermore, the energy beam source (5) is oriented relative to the first material source (4) such that the first material flow (6) may overlap with the energy beam (7) in a region (8) adjacent to the substrate (2) or in a collision region (9) of the first material flow (6) on the substrate (2), wherein an overlap region (10) is defined.

Description

Technical Field

[0001] This invention relates to an apparatus and method for manufacturing a composite having at least one functional layer, or for further application in manufacturing electronic or optoelectronic structural elements or solid-state batteries. The composite is configured as a layered structure and includes: at least one substrate configured as a plate having at least one planar substrate surface; and at least one substantially polycrystalline or at least one substantially single-crystalline layer, the layer comprising at least one compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer, a metal layer, particularly a thin metal layer or a hard metal material. Background Technology

[0002] This type of method is known from the applicant's document DE 10 2013 112 785 B3. In such a known method, the substrate is first heated and cleaned, then the substrate surface is end-capped and at least one layer is grown thereon by means of a material source supplying material components. A disadvantage of this method is that the quality and growth rate of the layer to be grown on the substrate are further limited by the type of material source. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of the prior art and to provide an apparatus and method by means of which material components can be effectively deposited on a substrate as a layer to be grown, wherein the quality and growth rate of the layer to be grown are improved.

[0004] This objective is achieved by the apparatus and method according to the claims.

[0005] An apparatus according to the present invention for fabricating, preferably plasma-assisted, electronic or optoelectronic structural elements or solid-state batteries onto a substrate by means of plasma-assisted chemical vapor deposition or reactive physical vapor deposition or a combination thereof, comprises a processing cavity, a first material source oriented toward a substrate receptacle within the processing cavity, and an energy beam source, wherein a first material flow is generated by means of the first material source and an energy beam is generated by means of the energy beam source. The apparatus is characterized in that the energy beam source is oriented relative to the first material source such that the first material flow may overlap with the energy beam in a region adjacent to the substrate or in a collision region of the first material flow on the substrate, wherein the overlap region is defined.

[0006] The apparatus according to the invention can be used, in particular, as part of an in-line coating apparatus for plasma-assisted chemical vapor deposition or reactive physical vapor deposition, or combinations thereof, onto a substrate, wherein multiple processing chambers can be arranged side by side. Such apparatus is known in the prior art, for example by EP 2 521 804 B1, and therefore further discussion is not conducted here of the more precise design possibilities or definitions of apparatus components, such as, for example, processing chambers.

[0007] The composite of the present invention should be understood as a layered structure comprising: at least one substrate configured as a plate, said substrate including at least one planar substrate surface; and at least one substantially polycrystalline or at least one substantially monocrystalline layer, said layer including at least one compound semiconductor, 2D layer, ceramic material, amorphous layer, solid-state battery layer, metal layer, particularly thin metal layer or hard metal material.

[0008] The substrate can be formed from different carrier materials, such as silicon or other semiconductor blank materials or crystals, metals, textiles, polymers, glass, paper, or other temperature-sensitive materials.

[0009] The first material source can be configured such that the first material flow is formed from material components, thereby enabling at least one substantially polycrystalline or at least one substantially single-crystal layer of the material source—including at least one compound semiconductor, 2D layer, ceramic material, amorphous layer, solid-state battery layer, metal layer, particularly thin metal layer or hard metal material—to be constructed on the substrate.

[0010] The material composition of compound semiconductors can be understood here as a material or material compound or compound having semiconductor properties, which in particular includes the following:

[0011] - Compounds of Group II and Group VI elements in the Periodic Table (PSE), such as ZnO, ZnSe or the like;

[0012] - Compounds of Group III and Group V elements in the Periodic Table (PSE), such as GaN, GaAs, GaSb, InP, BaAlGaInN, or similar compounds.

[0013] - Compounds of Group III and Group VI elements in the Periodic Table (PSE), such as Ga2O3, Al2O3 or similar.

[0014] - Compounds of different elements in Group IV of the Periodic Table (PSE), SiC, as well as pure elements such as Si, Ge, or diamond.

[0015] The 2D layer should be understood here as a crystalline material, which consists of only one layer of atoms or molecules. For example, it can include graphene, two-dimensional boron nitride, or molybdenum sulfide.

[0016] The solid-state battery layer should be understood here as a layer of materials that are used entirely or partially in the construction of the solid-state battery. For example, lithium or a polymer ceramic coating with aluminum nitride (AlN) can be used as the anode material.

[0017] Ceramic materials should be understood here to specifically refer to non-oxidizing ceramic materials. For example, the material composition of ceramic materials includes silicon nitride (Si3N4) or boron carbide (B4C).

[0018] Amorphous layers should be understood here as particularly non-crystalline structures. Examples include diamond-like carbon coatings (DLC).

[0019] The metal thin layer here should be understood as a metal layer that may consist of, for example, a single metal, a metal compound, or a sequence of metal layers. This layer or sequence of layers may have ohmic characteristics or be configured as a Schottky rectifier diode layer or a Schottky barrier diode layer. For example, in gallium nitride-based (GaN-based) transistor structures, sequences of metal layers—titanium, aluminum, nickel, and gold—are used for ohmic contacts.

[0020] Hard metallic materials should be understood here, in particular, as layers having a Vickers hardness greater than 1000 VH and / or a Mohs hardness greater than 9.0, with a predominantly metallic bond. For example, the material composition of hard metallic materials includes titanium nitride (TiN).

[0021] The energy beam source can be understood as, for example, a laser, discharge lamp, flash tube, flash lamp, especially an excimer, excimer laser, excimer flash lamp, or excited-state dimer, ion gun, or magnetron. Furthermore, the energy beam source can be understood as a laser, particularly one that generates heat, such as, for example, a CO2 laser, a diode laser, or an Nd:YAG laser (neodymium-doped yttrium aluminum garnet laser). Moreover, the energy beam source can also be understood as a flash lamp by which the energy input according to the device of the invention is achieved.

[0022] The first material beam can have a cross-section defined by the substrate surface parallel to the substrate, wherein overlapping regions can constitute sub-regions of the cross-section and, in particular, can be equal to the cross-section. This can be achieved, for example, by a corresponding grid-like or sweeping scan of the energy beam or by its corresponding diffusion, such as by means of a prism or by an array having point sources or single energy beam sources, or by lenses, photomasks, and beam splitters. The energy can be distributed over a large area or focused onto a defined region and is hereby constant in time or pulsed.

[0023] By means of the apparatus according to the invention, it is thus achieved that the energy of the energy beam is preferably absorbed, or at least partially introduced, by a component of the first material stream or a component of the material in the vicinity of the substrate, particularly directly before the first material stream collides with the substrate, thereby increasing the reactivity of the material component. Alternatively, it can also be achieved, using the apparatus according to the invention, that the energy of the energy beam is preferably absorbed in the collision region of the first material stream on the substrate surface of the substrate, wherein the first material stream and the energy beam overlap directly on the substrate surface in the collision region, thereby increasing the reactivity of the material component.

[0024] By inducing energy input into the material flow in the overlapping region through an energy beam, the reactivity of the material composition of the first material flow—that is, particles, molecules, or atoms—is enhanced, thereby improving its distribution and bonding ability on the substrate or in a coating on the substrate, as well as its distribution and bonding ability with the substrate or in a coating on the substrate. Furthermore, the improved reactivity can lead to improved nucleation density and nucleation rate in the case of a substrate coating, due to improved lateral mobility of molecules relative to the flow direction of the material flow and the diffusion tendency of the material composition. This advantage can also be used in semiconductor doping by making the foreign material in an improved manner in an integrable or electrically activatable manner.

[0025] The energy beam can act on the material components of the material flow at an angle relative to the material flow in the overlapping region. This angle can be 90° relative to the flow direction of the material flow or take any arbitrary value, up to the parallel orientation of the energy beam relative to the material flow, provided that an overlapping region is further formed between the material flow and the energy beam. Because the reactivity of the material components of the material flow is increased by acting on the material components with the energy beam, a substrate that is temperature sensitive, such as a substrate composed of textiles, polymers, glass, paper, or other organic compounds, can be coated by means of the device according to the invention, but also substrates composed of conventional inorganic compounds, such as metals, semiconductors, or ceramics. In any case, the manufacture of electronic or optoelectronic structural elements or solid-state battery layers as composites is improved by means of the device according to the invention, in which the substrate or composite to be coated can have a reduced temperature level for its coating compared to known methods, which not only protects the components themselves but also results in faster cycle times due to reduced processing time and improved economy.

[0026] Furthermore, it is suitable that the overlapping region corresponds to the cross-section of the first material bundle, wherein the cross-section is defined parallel to the substrate surface of the substrate. This directs the energy input to all material components of the first material bundle, thereby improving the reactivity of the entire first material bundle.

[0027] Furthermore, the first material source can be configured as a first plasma source, wherein the first material flow can be provided by a first plasma beam composed of ionized first coating components, wherein the first coating components include material components of compound semiconductors, 2D layers, ceramic materials, amorphous layers, solid-state battery layers, metal layers, particularly thin metal layers or hard metal materials.

[0028] The plasma source here can be a microwave plasma source, an inductively coupled plasma (ICP) source, a capacitively coupled plasma (CCP) source, a remote plasma source, a sputtering source, especially a magnetron sputtering source, or an ion source or ion beam source.

[0029] Besides the possibility of selective coating on substrates with different conductivity, another advantageous application of this form of the invention may be to utilize material source energy as a plasma source to achieve, for example, substrate cleaning, ion etching, heating with low loss in a heat source, atomization of reactive ions, sensitization or charge neutralization, and pumping of reactive gases. In any case, effective coating of the substrate can be achieved by combining the first plasma source with the energy beam source.

[0030] Furthermore, the device may be configured to include a second material source, wherein a second material flow from the second material source overlaps with a first material flow in a region adjacent to the substrate or in a collision region of the second material flow on the substrate, thereby forming a common interaction region of the first and second material flows.

[0031] The overlap of the first and second material flows can be complete or partial with respect to their cross-sections, thus forming, for example, a common action region corresponding to the first cross-section of the first material flow and the second cross-section of the second material flow in the case of complete overlap. This allows for the simultaneous application of particle or molecular coatings from both the first and second material sources to the substrate, rather than applying coatings to a sub-region of the substrate by only one material flow. Simultaneously, it allows for the corresponding full cross-sections of the first and second material flows to overlap with the energy beam.

[0032] Specifically, it can be configured such that the overlapping region and the active region primarily coincide. Furthermore, it can be configured such that the first and second material sources are strip-shaped sources. Therefore, the active region can also be configured as a strip shape, and the energy beam can be directed towards the active region such that the overlapping region and the active region completely coincide, or the overlapping region is larger than the active region in any way, wherein the active region is completely contained within the overlapping region. In this sense, it can also be configured such that the energy beam acts on the surface region of the substrate before coating the surface region of the substrate. This can induce additional energy input into the substrate, which can be used for substrate pretreatment.

[0033] In any case, a bar source can be, for example:

[0034] - Composed of strip elements that collectively guide all material components that are needed to supply compound semiconductors, 2D layers, ceramic materials, amorphous layers, solid-state battery layers or metal layers, especially thin metal layers or coating components of hard metal materials;

[0035] - Includes multiple strip elements, through which all the required material components are guided individually or in smaller groups;

[0036] - It is configured as a bar magnetron source;

[0037] - It is configured as a tubular magnetron source;

[0038] - It is configured as a strip evaporator;

[0039] - Includes multiple evaporator stations, which together form a strip;

[0040] - Includes multiple ion guns, which together form a strip;

[0041] - It is configured as a strip-shaped ion gun;

[0042] - It has a strip mask, the strip mask being designed to have one or more slits through which the desired material component exits; or

[0043] - It has a strip mask, which includes a screen inlet through which the required material components exit.

[0044] The following form is also advantageous, in which the second material source can be set as a second plasma source, wherein the second material flow can be provided by a second plasma beam composed of ionized second coating components, wherein the second coating components include material components of compound semiconductors, 2D layers, ceramic materials, amorphous layers, solid-state battery layers, metal layers, particularly thin metal layers or hard metal materials, and wherein the second coating components are different from the first coating components.

[0045] The second material source can also be configured as a strip source as described above. In any case, by providing two plasma sources, possible pre-reactions between the first and second coating components can be prevented until the two material flows overlap in a common action region, thereby preventing, for example, thermal decomposition or other forms of interaction of the material flows.

[0046] One possible improvement is that the energy beam source is a laser source, wherein the energy beam that can be generated by means of the laser source is a laser beam having wavelengths ranging from 157 nanometers to 10.6 μm.

[0047] Preferably, the laser beam has a specific wavelength to excite nitrogen, oxygen, ammonia, ozone, hydrogen, carbon compounds such as methane, silicon, or silicon compounds such as silane, depending on the coating composition applied in the material source, thereby enhancing the reactivity of the corresponding coating composition in the adjacent region of the substrate or on the substrate, thus enabling improved bonding of the coating composition to the uppermost layer of the substrate or to the substrate surface. In particular, the wavelength of the laser beam is therefore advantageous, for example, for coating compositions having a nitrogen component, including 567.9 nm, 500.5 nm, and 399.4 nm, wherein, furthermore, the intensity and pulsation of the laser beam can be matched to the coating composition so as to induce the highest possible reactivity of the coating composition.

[0048] The present invention also relates to a method for manufacturing a composite having at least one functional layer or for further application in manufacturing electronic or optoelectronic structural elements or solid-state batteries, wherein the composite is configured as a layered structure, the layered structure comprising:

[0049] - At least one substrate configured as a plate, said substrate including a substrate surface; and

[0050] - At least one substantially polycrystalline or at least one substantially single-crystal layer, comprising at least one compound semiconductor, 2D layer, ceramic material, amorphous layer, solid-state battery layer or metal layer, particularly thin metal layer or hard metal material.

[0051] The method according to the present invention includes the following steps:

[0052] - Heating the substrate surface or a first sub-region of the substrate surface to a temperature of at least 20°C and up to 550°C;

[0053] - At least one functional layer is grown by supplying a first coating component, consisting of a material composition of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer, or a metal layer, particularly a thin metal layer or a hard metal material, to the substrate surface by a first material stream from a first material source.

[0054] Furthermore, the method according to the invention is characterized in that the first material flow overlaps with the energy beam of the energy beam source in a region adjacent to the substrate or in a collision region of the first material flow on the substrate surface, wherein the overlapping region is defined.

[0055] The functional layer herein should be understood in particular as a layer suitable for performing specific functions based on electrical or optical characteristics for electrical or optical applications. The terms complex, layered structure, and layered body should also be understood as described in the cited prior art or in the relevant expertise of those skilled in the art.

[0056] Furthermore, it is suitable to grow at least one layer by supplying a first coating component and a second coating component, consisting of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer, or a metal layer, particularly a thin metal layer or a hard metal material, to the substrate surface of the at least one plane by a first material flow from a first material source for the first coating component and a second material flow from a second material source for the second coating component, wherein the first material flow and the second material flow overlap with the energy beam of the energy beam source in a region adjacent to the substrate or in a collision region of the first material flow on the substrate surface, thereby defining an overlap region. This avoids mutual interference of the material flows or undesirable pre-reactions of the coating components before collision on the substrate surface.

[0057] Furthermore, it is possible to apply an energy beam to the substrate surface at an incident angle ranging from 0° to 90° relative to the substrate surface, thereby heating the substrate surface or a first sub-region of the substrate surface by means of the energy beam from the energy beam source. This allows for the simple processing of the substrate surface or substrate. This can be achieved, for example, by a corresponding grid-like or sweeping scan of the energy beam or by its corresponding diffusion, such as by means of a prism or by an array of point sources or single energy beam sources, or by lenses, photomasks, and beam splitters. The energy can be distributed over a large area or focused onto a defined region and is hereby constant in time or pulsed. It is almost possible to pre-treat, or in particular, heat the substrate, wherein the reactivity of the material components colliding with the substrate is also increased by the continued presence of overlapping regions.

[0058] Alternatively, this can be configured such that the overlapping area with the energy beam is provided such that the substrate surface remains in contact with the energy beam. This causes the energy beam to overlap only with the first material flow or the various material flows, so that the energy beam does not directly affect the substrate, or thus does not cause direct energy input to the substrate surface, at least not through the overlapping area.

[0059] In a particular form, the first and second material flows may overlap in a region adjacent to the substrate or in a collision region on the substrate surface, thereby forming a common action region for the first and second material flows, wherein the strip-shaped common action region overlaps with the energy beam.

[0060] The overlap of the first and second material flows can be complete or partial with respect to their cross-sections, thus forming, for example, a common action region corresponding to the first cross-section of the first material flow and the second cross-section of the second material flow in the case of complete overlap. This allows for the simultaneous application of particle or molecular coatings from both the first and second material sources to the substrate, rather than applying coatings to a sub-region of the substrate by only one material flow. Simultaneously, it allows for the corresponding full cross-sections of the first and second material flows to overlap with the energy beam.

[0061] Specifically, it can be configured such that the overlapping region largely coincides with the active region. Furthermore, it can be configured such that the first and second material sources are strip-shaped sources. Therefore, the active region can also be configured as a strip shape, and the energy beam can be directed towards the active region such that the overlapping region completely coincides with the active region, or the overlapping region is larger than the active region in any way, wherein the active region is completely contained within the overlapping region. In this sense, it can also be configured such that the energy beam acts on the surface region of the substrate before coating the surface region of the substrate. This can induce additional energy input into the substrate, which can be used for substrate pretreatment.

[0062] Finally, it can also be configured that the device according to the invention further includes a mirror device having at least one mirror, by means of which the energy beam of the energy beam source can be deflected, redirected, or reflected such that the overlapping area between the energy beam and the action area or at least the first material flow can be configured to be unaffected with respect to other components or material sources of the device according to the invention in the processing cavity. Attached Figure Description

[0063] To better understand the present invention, the following figures further illustrate the invention.

[0064] Each is shown in a very simplified, schematic view:

[0065] Figure 1 A first possible implementation of the device is shown;

[0066] Figure 2 A cross-section of a second possible embodiment of the device is shown;

[0067] It should be noted at the outset that in different described embodiments, the same parts are given the same reference numerals or the same component names, and the disclosure contained throughout the specification can be applied, in meaning, to the same parts having the same reference numerals or the same component names. The location descriptions selected in the specification, such as, for example, upper, lower, side, etc., also refer to the directly described and illustrated figures, and these location descriptions are applied, in meaning, to the new location where the location changes. Detailed Implementation

[0068] exist Figure 1 A first possible embodiment of the apparatus 1 according to the invention is shown in a highly simplified, schematic view. Apparatus 1 can be used to fabricate electronic or optoelectronic structural elements or solid-state batteries of composite composition onto a substrate 2 by preferably plasma-assisted chemical vapor deposition or reactive physical vapor deposition, or a combination thereof. Apparatus 1 may include a processing chamber 3, a first material source 4 oriented toward the substrate 2 which can be housed within the processing chamber 3, and an energy beam source 5, wherein a first material flow 6 can be generated by means of the first material source 4 and an energy beam 7 can be generated by means of the energy beam source 5. Here, the energy beam source 5 and the first material source 4 are oriented or arranged relative to each other such that the first material flow 6 can overlap with the energy beam 7 in a proximity region 8 of the substrate 2 or substrate surface 11, or in a collision region 9 of the first material flow 6 on the substrate 2 or substrate surface 11, wherein an overlap region 10 is defined.

[0069] Furthermore, a second material source 12 for providing the second material flow 13 can also be provided. It can also be configured that the first material source 4 and the second material source 12 are each plasma sources and that the material sources 4 and 12 are configured as strip sources. Thus, the material sources 4 and 12 can each act on the substrate surface 11 within a strip region. This is particularly meaningful if the first material flow 6 and the second material flow 13 comprise different coating compositions consisting of materials such as compound semiconductors, 2D layers, ceramic materials, solid-state battery layers, metal layers, especially thin metal layers or hard metal materials. The first material flow 6 and the second material flow 13 can be oriented relative to each other such that a common action region 15 of the material flows 6 and 13 is first generated in the adjacent region 8 of the substrate 2. This prevents the mutual influence of coating compositions that can be formed in advance. It is particularly advantageous that the corresponding cross sections of the material flows 6 and 13 overlap in the action region 15 such that the corresponding cross sections completely overlap. Furthermore, it is advantageous that the action region 15 completely overlaps with the overlapping region 10.

[0070] The energy beam source 5 can be configured such that the energy beam 7 can be provided at an incident angle 14 relative to the substrate surface 11 from a range including 0° to 90°.

[0071] exist Figure 2 The diagram shows a cross-section of a second embodiment of device 1 that is independent of itself when necessary, wherein the same application is again made to the same portion as before. Figure 1 The same reference numerals or component names are used in the accompanying drawings. To avoid unnecessary repetition, indications or references are given in the preceding text. Figure 1 Detailed description within. From this view, in conjunction with... Figure 1As can be seen in the overview, the energy beam 7 can in particular have an incident angle 14 of 0° relative to the substrate surface 11. Furthermore, it can be seen that the overlapping region 10, as mentioned in the previous description, can act as a strip on the substrate 2.

[0072] The energy beam source 5 can be understood as, for example, a laser, discharge lamp, flash tube, flash lamp, excimer, excimer laser, excimer flash lamp, or excited-state dimer, ion gun, or magnetron. Furthermore, the energy beam source 5 can be understood as a laser, particularly one that generates heat, such as, for example, a CO2 laser, diode laser, or Nd:YAG laser. Moreover, the energy beam source 5 can also be understood as a flash lamp by which energy input according to the device 1 of the present invention is achieved.

[0073] The energy beam source 5 can be, in particular, a laser source, wherein the energy beam 7 generated by means of the laser source is a laser beam having wavelengths ranging from 157 nanometers to 10.6 μm.

[0074] By means of the device according to the invention—as it is in Figure 1 and Figure 2 As shown, the method according to the invention can be implemented. Here, a substrate 2 can first be provided in the processing chamber 3. First, the substrate surface 11 or a sub-region of the substrate 2 is heated to a temperature of at least 20°C or room temperature and up to 550°C. Then, at least one functional layer can be grown on the substrate surface 11 by supplying a first coating composition consisting of a compound semiconductor, 2D layer, ceramic material, amorphous layer, solid-state battery layer, or metal layer, particularly a thin metal layer or a hard metal material, to the substrate surface 11 via a first material stream 6 from a first material source 4. The method according to the invention is characterized in that, according to the design of the apparatus, the first material stream 6 overlaps with the energy beam 7 of the energy beam source 5 in a neighboring region 8 of the substrate 2 or in a collision region 9 of the first material stream 6 on the substrate surface 11, wherein an overlap region 10 is defined.

[0075] If each material stream 6, 13, or at least one material stream 6 or 13 overlaps with the energy beam 7, then the reactivity of the coating component or material component particles is enhanced according to the previous description by the corresponding energy input to the coating component or correspondingly to the material component, or if necessary, also to the substrate surface 11. Therefore, the energy beam source can also be configured to input energy, or particularly heat, into the substrate surface 11 or substrate 2, so as to save, for example, the additional heating elements that are generally necessary in the processing chamber 3, since the corresponding pretreatment of substrate 2, particularly with regard to heat input into the substrate, can be carried out by means of the energy beam source 5, or if necessary, by means of another energy beam source configured for this purpose. Here, the energy beam source 5 or the other energy beam source can also be configured, particularly, as a strip lamp source or as a source for emitting high-energy light or partial-spectrum light, so that energy input, or particularly heat input, into substrate 2 can be achieved as cost-effectively as possible.

[0076] Here, further possible variations in the relative orientations of material sources 4 and 12 and energy beam source 5 relative to each other are conceivable. For example, it could be meaningful for the first material source 4 and the second material source 12 not to overlap, wherein the energy beam 7 further overlaps with the first material stream 6, or even for another energy source (not shown) to overlap with the second material stream 13. A mirror device (not shown) is also conceivable, which modifies or distributes the energy beam 7 such that the other two material streams 6, 13 and the energy beam source 5 are overlapable.

[0077] Alternatively, it is also possible to oriented the energy beam 7 toward the material flow 6, 13 or at least the first material flow 6 in the adjacent region 8 at an incident angle of 14, such that not only the coating components are energized by the energy beam 7, but also the energy input through the energy beam 7 is input to the substrate surface 11 or the substrate 2.

[0078] Various embodiments illustrate possible implementation variations, wherein it should be noted that the invention is not limited to the specific implementation variations shown herein, and different combinations of the various implementation variations are also possible, and such variations based on the teachings of the invention for technical processing may be within the capabilities of those skilled in the art.

[0079] The scope of protection is determined by the claims. The specification and drawings, however, can be used to design the claims. A single feature or combination of features from the different embodiments shown and described can represent an independent inventive solution in itself. The purpose based on an independent inventive solution can be obtained from the specification.

[0080] In the specific specification, the full description of the value range can be understood as including all and all of the sub-ranges derived from it. For example, the description of 1 to 10 can be understood as including all sub-ranges starting from the lower boundary 1 and the upper boundary 10. That is, all sub-ranges start from the lower boundary 1 or greater and end at the upper boundary 10 or less, such as 1 to 1.7, or 3.2 to 8.1, or 5.5 to 10.

[0081] For the sake of clarity, it should be noted that, for better understanding of the structure, some of the elements are shown not to scale and / or enlarged and / or reduced.

[0082] List of reference numerals

[0083] 1 device

[0084] 2 substrates

[0085] 3 processing chambers

[0086] 4. First Material Source

[0087] 5 energy beam sources

[0088] 6 First Material Flow

[0089] 7 energy beams

[0090] 8 neighboring areas

[0091] 9 Collision Zones

[0092] 10 overlapping regions

[0093] 11 Substrate Surface

[0094] 12 Second Material Source

[0095] 13 Second Material Flow

[0096] 14 angle of incidence

[0097] 15 Area of ​​Effect

Claims

1. An apparatus (1) for fabricating, preferably by plasma-assisted chemical vapor deposition or reactive physical vapor deposition or a combination thereof, an electronic or optoelectronic structural element or a solid-state battery as a composite onto a substrate (2), said apparatus comprising a processing cavity (3), a first material source (4) oriented to a substrate (2) accommodating within said processing cavity (3), and an energy beam source (5), wherein, A first material flow (6) can be generated by means of the first material source (4) and an energy beam (7) can be generated by means of the energy beam source (5), characterized in that the energy beam source (5) is oriented relative to the first material source (4) such that the first material flow (6) can overlap with the energy beam (7) in the adjacent region (8) of the substrate (2) or in the collision region (9) of the first material flow (6) on the substrate (2), wherein the overlapping region (10) is defined.

2. The apparatus (1) according to claim 1, characterized in that, The overlapping region (10) corresponds to the cross section of the first material bundle, wherein the cross section is defined parallel to the substrate surface (11) of the substrate (2).

3. The apparatus (1) according to any one of the preceding claims, characterized in that, The first material source (4) is a first plasma source, wherein the first material flow (6) can be provided by a first plasma beam composed of ionized first coating components, wherein the first coating components include material components of compound semiconductors, 2D layers, ceramic materials, amorphous layers, solid-state battery layers or metal layers, particularly thin metal layers or hard metal materials.

4. The apparatus (1) according to any one of the preceding claims, characterized in that, The device (1) includes a second material source (12), wherein a second material flow (13) of the second material source (12) overlaps with a first material flow (6) in a neighboring region (8) of the substrate (2) or in a collision region (9) of the second material flow (13) on the substrate (2), thereby forming a common working region (15) of the first material flow (6) and the second material flow (13).

5. The apparatus (1) according to claim 4, characterized in that, The overlapping region (10) largely coincides with the active region (15).

6. The apparatus (1) according to claim 4 or 5, characterized in that, The second material source (12) is a second plasma source, wherein the second material flow (13) can be provided by a second plasma beam composed of ionized second coating components, wherein the second coating components include material components of compound semiconductors, 2D layers, ceramic materials, amorphous layers, solid-state battery layers or metal layers, particularly thin metal layers or hard metal materials, and the second coating components are different from the first coating components.

7. The apparatus (1) according to any one of the preceding claims, characterized in that, The energy beam source (5) is a laser source, wherein the energy beam (7) that can be generated by means of the laser source is a laser beam having wavelengths ranging from 157 nanometers to 10.6 μm.

8. A method for manufacturing a composite having at least one functional layer or for further application in the manufacture of electronic or optoelectronic structural elements or solid-state batteries, wherein, The composite is configured as a layered structure, and the composite includes: - At least one substrate (2) configured as a plate, said substrate including a substrate surface (11); and - At least one substantially polycrystalline or at least one substantially single-crystalline layer, said layer comprising at least one compound semiconductor, 2D layer, ceramic material, amorphous layer, solid-state battery layer, or metal layer, particularly a thin metal layer or a hard metal material. The method includes the following steps: - Heating the substrate surface (11) or a first sub-region of the substrate surface (11) to a temperature of at least room temperature, particularly 20°C and up to 550°C; - At least one functional layer is grown by supplying a first coating component consisting of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer or a metal layer, particularly a thin metal layer or a hard metal material, to the substrate surface (11) by a first material stream (6) from a first material source (4); The feature is that the first material flow (6) overlaps with the energy beam (7) of the energy beam source (5) in the adjacent region (8) of the substrate (2) or in the collision region (9) of the first material flow (6) on the surface (11) of the substrate, wherein the overlapping region (10) is defined.

9. The method according to claim 8, characterized in that, The at least one layer is grown and formed by supplying a first coating component, consisting of a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a solid-state battery layer or a metal layer, particularly a thin metal layer or a hard metal material, to the surface of at least one planar substrate (11) with a first material flow (6) from a first material source (4) for the first coating component and a second material flow (13) from a second material source (12) for the second coating component, wherein the first material flow (6) and the second material flow (13) overlap with the energy beam (7) of the energy beam source (5) in the adjacent region (8) of the substrate (2) or in the collision region (9) of the first material flow (6) on the substrate surface (11), thereby defining an overlap region (10).

10. The method according to claim 8 or 9, characterized in that, An energy beam (7) is applied to the substrate surface (11) at an incident angle (14) ranging from 0° to 90° relative to the substrate surface (11), thereby heating the substrate surface (11) or a first sub-region of the substrate surface (11) by means of the energy beam (7) of the energy beam source (5).

11. The method according to claim 8 or 9, characterized in that, An overlap region (10) is provided with the energy beam (7) such that the substrate surface (11) remains in contact with the energy beam (7).

12. The method according to any one of claims 8 to 11, characterized in that, The first material flow (6) and the second material flow (13) overlap in the adjacent region (8) of the substrate (2) or in the collision region (9) of the material flow on the substrate surface (11), thereby forming a common action region (15) of the first material flow (6) and the second material flow (13), wherein the strip-shaped common action region (15) overlaps with the energy beam (7).

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