Reflective device, process chamber and semiconductor process equipment
By designing reflector combinations with curved or inclined surfaces, the light propagation path is optimized, solving the problem of uneven heat treatment on the wafer surface and improving deposition quality and device performance.
CN122303820APending Publication Date: 2026-06-30SHENZHEN SICARRIER IND MACHINES CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHENZHEN SICARRIER IND MACHINES CO LTD
- Filing Date
- 2026-04-09
- Publication Date
- 2026-06-30
AI Technical Summary
Technical Problem
In existing semiconductor manufacturing processes, reflective devices cause uneven heat treatment on the wafer surface, resulting in localized high-temperature areas and localized cold areas, which affect deposition quality and device performance.
Method used
The reflector combination with curved or inclined surface design optimizes the light propagation path through double reflection, so that the light can uniformly cover the wafer surface, eliminate local high temperature and cold area, and improve temperature uniformity and heating rate.
Benefits of technology
Uniform heating of the wafer surface was achieved, which improved the uniformity and density of the deposited material and enhanced the performance and processing quality of semiconductor devices.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122303820A_ABST
Abstract
This application relates to the field of semiconductor process technology, and more particularly to a reflective device, a process chamber, and semiconductor process equipment. The reflective device includes: a first reflector disposed below a workpiece, the first reflector having a continuous first reflective surface, and at least part of the first reflective surface being curved; and a second reflector located below the first reflector, having a second reflective surface facing the workpiece. The first and second reflective surfaces enclose a spatial region for placing a light-emitting element, with the first reflective surface facing the light-emitting element and the first reflective surface facing the second reflective surface. The light emitted by the light-emitting element is continuously and uniformly reflected by the first reflective surface to the second reflective surface on the second reflector, and the second reflective surface further continuously and uniformly reflects the light to the lower surface of the workpiece, improving the uniformity of light coverage emitted by the light-emitting element, eliminating localized high-temperature areas and localized cold areas on the wafer surface, thereby improving the quality of wafer deposition.
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