Air intake device and deposition apparatus

Abstract

This application discloses an air intake device and a deposition apparatus having the air intake device. An air intake column is provided to connect the air intake pipe to the spray plate. The reaction gas delivered from the air intake pipe can be sent to the spray plate through multiple air intake holes provided on the air intake column. Since the inner diameter of the air intake holes is less than or equal to 1 mm, the generation of plasma by the reaction gas in the air intake holes can be suppressed, so as to avoid the problem of particles in the film and abnormal heating of the air intake device.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing, and more specifically, to an air intake device and a deposition apparatus. Background Technology

[0002] Thin film deposition technology is a process that deposits materials onto a substrate surface to form a thin film. It is commonly used to prepare thin films of various materials and has wide applications in electronic devices, optical devices, nanomaterials, and other fields. By controlling the conditions and parameters during the deposition process, thin film materials with different properties and functions can be obtained. Thin film deposition technology can form thin films or coatings on substrates such as wafers, which can protect the wafer from external environmental damage and stabilize its performance.

[0003] Plasma-enhanced chemical vapor deposition (PECVD) is a method for preparing semiconductor thin films and other thin films by using glow discharge to ionize the chemical vapor in a deposition chamber and then depositing the film on a substrate through chemical reactions. PECVD enhances the activity of the chemical vapor reactants through plasma activation, increasing the surface reaction rate, and significantly reduces the film deposition temperature through high-energy ions. Under the influence of plasma, the gas is dissociated in the chamber, forming a highly reactive substance containing gas molecules, high-energy ions, electrons, and active free radicals. On the deposition surface, not only are conventional thermochemical reactions present, but also complex plasma chemical reactions. The deposited film grows under the combined action of these two chemical reactions.

[0004] In current plasma-enhanced chemical vapor deposition (PECVD) devices, a relatively tall ceramic tube is typically used as the air inlet for the spray plates. This approach limits the power, gas pressure, and electrode spacing used in the process. Under certain combined conditions, abnormal discharge can easily occur in the air inlet, leading to particle formation on the film and abnormal temperature rise in the air inlet. Summary of the Invention

[0005] The purpose of this application is to provide an air intake device and a deposition apparatus that can suppress the generation of plasma by reactive gases in the air intake port.

[0006] In a first aspect, the present invention provides an air intake device, including an air intake pipe and an air intake column connected to one end of the air intake pipe, wherein the end of the air intake column away from the air intake pipe is used to connect to a spray plate, wherein the air intake column is provided with a plurality of air intake holes, and the inner diameter of the air intake holes is less than or equal to 1 mm.

[0007] In an optional implementation, the density of each air intake hole gradually increases from the central axis of the air intake column toward the edge.

[0008] In an optional embodiment, multiple rings of holes are distributed outward from the central axis of the air intake column, and each ring of holes contains multiple air intake holes arranged in a circular array around the central axis of the air intake column.

[0009] In two adjacent groups of holes, the number of air intake holes in the group closer to the central axis of the air intake column is less than the number of air intake holes in the group farther from the central axis of the air intake column.

[0010] In an optional embodiment, the inner diameter of the air intake gradually increases from the end where the air intake column is connected to the air intake pipe to the end away from the air intake pipe.

[0011] In an optional embodiment, at least one end face of the air intake column protrudes outward along the axial direction, and the axial length of each air intake hole gradually decreases from the central axis of the air intake column toward the edge.

[0012] In an optional embodiment, the air intake pipe has an integrally formed honeycomb plate, the shape of which is adapted to the end face of the air intake column, and the honeycomb holes of the honeycomb plate are connected to the air intake hole.

[0013] In an optional embodiment, the inner diameter of the honeycomb holes is smaller than the inner diameter of the air inlet.

[0014] In an optional embodiment, the ratio of the inner diameter of the honeycomb pores to the inner diameter of the air inlet is less than or equal to 2.

[0015] In an optional embodiment, all air intakes include multiple outer holes, and the portion of each outer hole away from the air intake pipe is inclined outward along the radial direction of the air intake column.

[0016] In an optional implementation, the inclination of each outer hole gradually increases from the central axis of the intake column toward the edge.

[0017] In a second aspect, the present invention provides a deposition apparatus, including a cavity, a spray plate, and an air intake device as described in any of the foregoing embodiments;

[0018] The spray plate is fixed to the cavity, and the spray plate has a communicating air inlet cavity and multiple spray holes;

[0019] The end of the air intake column away from the air intake pipe is connected to the spray plate, and each air intake hole is connected to the air intake chamber.

[0020] The beneficial effects of the embodiments of this application include:

[0021] By setting an air inlet column to connect the air inlet pipe to the spray plate, the reaction gas delivered from the air inlet pipe can be sent to the spray plate through multiple air inlets set on the air inlet column. Since the inner diameter of the air inlet is less than or equal to 1 mm, the generation of plasma in the air inlet by the reaction gas can be suppressed, so as to avoid the problem of particles on the film and abnormal heating of the air inlet device. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the deposition equipment used in this application;

[0024] Figure 2 This is a top view of the air intake column in one embodiment;

[0025] Figure 3 This is a cross-sectional view of the intake column in one embodiment;

[0026] Figure 4 This is a cross-sectional view of the air intake device in one embodiment;

[0027] Figure 5 This is a cross-sectional view of the intake column in one embodiment.

[0028] Icons: 100-Cavity; 200-Heating plate; 300-Spray plate; 310-Air inlet chamber; 311-Central area; 312-Side area; 320-Spray hole; 400-Air inlet device; 410-Air inlet pipe; 411-Honeycomb panel; 412-Honeycomb hole; 420-Air inlet column; 421-Air inlet hole; 422-Central area; 423-Edge area; 424-Central hole; 425-Outer hole; 500-Base. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0030] In the description of this application, it should be noted that the terms "inner" and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0031] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "setup" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0032] refer to Figure 1 This application discloses a deposition apparatus, which includes a cavity 100, a spray plate 300, a heating plate 200, and an air inlet device 400.

[0033] The heating plate 200 is located inside the cavity 100, serving as a carrier for the semiconductor substrate 500, such as a wafer, and also heating the substrate 500. The spray plate 300 covers the upper part of the cavity 100, directly opposite the heating plate 200. The gas inlet device 400 connects the gas source providing the reactive gas to the spray plate 300, enabling the reactive gas to be delivered to the spray plate 300. The spray plate 300 then evenly distributes the reactive gas, promotes plasma generation and maintenance, and ensures the deposition of high-quality thin films. Specifically, the spray plate 300 has a connected gas inlet chamber 310 and multiple spray holes 320. The gas inlet device 400 is fixed at the top center of the spray plate 300 to introduce reactive gas into the gas inlet chamber 310. The spray plate 300 is connected to a high-frequency AC power supply to generate plasma in the reactive gas, which then reaches the substrate 500 through the spray holes 320.

[0034] In one embodiment, the air intake device 400 includes an air intake pipe 410 and an air intake column 420 connected to one end of the air intake pipe 410. The end of the air intake column 420 away from the air intake pipe 410 is used to connect to the spray plate 300. The air intake column 420 is provided with a plurality of air intake holes 421, each of which communicates with the air intake chamber 310. The inner diameter of the air intake hole 421 is less than or equal to 1 mm.

[0035] In this way, by setting an air intake column 420 to connect the air intake pipe 410 to the spray plate 300, the reaction gas delivered from the air intake pipe 410 can be sent to the spray plate 300 through multiple air intake holes 421 set on the air intake column 420. Since the inner diameter of the air intake hole 421 is less than or equal to 1 mm, the generation of plasma in the air intake hole 421 can be suppressed, so as to avoid the problem of particles in the film and abnormal heating of the air intake device 400.

[0036] The materials of the intake pipe 410 and the intake column 420 are not specifically limited, as long as they have sufficient corrosion resistance and chemical stability. The intake pipe 410 is usually a round pipe, and the intake column 420 is correspondingly cylindrical.

[0037] Since the air intake device 400 is connected to the upper middle position of the spray plate 300, and since the flow velocity of the reactive gas in the air intake pipe 410 is slow near the pipe wall and fast in the central area away from the pipe wall due to flow resistance, after the reactive gas enters the air intake chamber 310 of the spray plate 300, the flow rate of the reactive gas passing through the middle region 311 of the air intake chamber 310 and the spray holes 320 in this region is relatively large, while the flow rate of the reactive gas passing through the side region 312 of the air intake chamber 310 and the spray holes 320 in this region is relatively small. Therefore, the film on the surface of the substrate 500 will exhibit a phenomenon of being thick in the middle and thin at the edges, resulting in poor film thickness consistency.

[0038] Therefore, in one embodiment, reference Figure 2 The arrangement of the air inlets 421 can be set such that the density of each air inlet 421 gradually increases from the central axis of the air inlet column 420 to the edge, that is, from the center of the air inlet column 420 in the radial outward direction. This can make the reaction gas ejected from the end connected to the spray plate 300 exhibit a slow flow velocity in the center and a small flow velocity at the edge, so that a larger flow of reaction gas reaches the side area 312 of the air inlet chamber 310, which can play a role in homogenizing the airflow in the air inlet chamber 310, making the airflow velocity from each spray hole 320 the same or similar, thereby improving the consistency of the film thickness on the surface of the substrate 500.

[0039] In detail, all the air inlets 421 include multiple rings of holes arranged at intervals outward from the central axis of the air inlet column 420. That is, multiple rings of holes are arranged at intervals outward from the central axis of the air inlet column 420, and each ring of holes contains multiple air inlets 421 arranged in a circular array around the central axis of the air inlet column 420. In two adjacent rings of holes, the number of air inlets 421 in the ring closer to the central axis of the air inlet column 420 is less than the number of air inlets 421 in the ring farther away from the central axis of the air inlet column. This makes the distribution of air inlets 421 more uniform and better ensures the consistency of film thickness.

[0040] For example, in Figure 2 In the embodiment shown, the air intake column 420 is divided into a central region 422 and an edge region 423 surrounding the outer periphery of the central region 422. The number of air intake holes 421 in each ring of holes distributed in the central region 422 and the number of air intake holes 421 in each ring of holes distributed in the edge region 423 gradually increase radially outward along the central axis of the air intake column 420. At the same time, the density of air intake holes 421 distributed in the central region 422 is less than the density of air intake holes 421 distributed in the edge region 423.

[0041] Of course, in some embodiments, the air inlets 421 in the central region 422 are evenly distributed, and the air inlets 421 in the edge region 423 are evenly distributed. That is, the distribution density of the air inlets 421 in the central region 422 is consistent, and the distribution density of the air inlets 421 in the edge region 423 is also consistent. At the same time, the density of the air inlets 421 distributed in the central region 422 is less than the density of the air inlets 421 distributed in the edge region 423. This can also achieve the effect that the reaction gas passing through the air inlet column 420 has a small flow rate in the middle and a large flow rate at the edge.

[0042] refer to Figure 3 In one embodiment, the inner diameter of the air inlet 421 gradually increases from the end where the air inlet column 420 is connected to the air inlet pipe 410 to the end away from the air inlet pipe 410. In other words, the end of the air inlet 421 closer to the air inlet pipe 410 is the first end, and the end of the air inlet 421 away from the air inlet pipe 410 is the second end. The inner diameter of the first end is smaller than that of the second end. This can diffuse the reaction gas passing through the air inlet 421 and further improve the homogenization effect.

[0043] The inner diameter of the first end of the air inlet 421 must be greater than or equal to 0.1 mm, and the inner diameter of the second end must be less than or equal to 1 mm. That is, the inner diameter of the thinnest part of the air inlet 421 must be greater than or equal to 0.1 mm, and the inner diameter of the thickest part must be less than or equal to 1 mm.

[0044] Specifically, the shape of the air intake 421 can be frustum-shaped, concave frustum-shaped (flared), or convex frustum-shaped. The frustum-shaped shape means that the generatrix of the air intake 421 is a straight line. The flared shape means that the generatrix of the air intake 421 is a curve that bends toward the central axis of the air intake 421. The convex frustum-shaped shape means that the generatrix of the air intake 421 is a curve that bends away from the central axis of the air intake 421.

[0045] refer to Figure 4In one embodiment, at least one end face of the intake column 420 protrudes outward along the axial direction. The shape of the protrusion is not specifically limited, and can be, for example, spherical, conical, etc. From the central axis of the intake column 420 towards the edge, the axial length of each intake hole 421 gradually decreases. Thus, because the axial length of the intake hole 421 closer to the central axis of the intake column 420 is large, the flow resistance is also greater, and the degree of flow velocity reduction is also greater. Conversely, the axial length of the intake hole 421 farther from the central axis of the intake column 420 is small, so the flow resistance is also smaller, and the degree of flow velocity reduction is also less, thereby improving airflow uniformity.

[0046] Furthermore, the intake pipe 410 has an integrally formed honeycomb plate 411. The shape of the honeycomb plate 411 is adapted to the end face of the intake column 420. For example, if the end of the intake column 420 near the intake pipe 410 protrudes outward, the honeycomb plate 411 is shaped as an upwardly protruding cover to cover the protruding part of the intake column 420. The honeycomb holes 412 of the honeycomb plate 411 are connected to the intake holes 421. Specifically, each honeycomb hole 412 is connected to one intake hole 421, that is, each honeycomb hole 412 is connected to the first end of one intake hole 421. The inner diameter of each honeycomb hole 412 is equal to the inner diameter of the first end of the corresponding intake hole 421. In this way, the honeycomb plate 411 will not cover the intake hole 421. At the same time, the plasma needs to pass through the intake hole 421 and the honeycomb holes 412 to move in the opposite direction. The path is long, so the generation of plasma in the intake device 400 can be better suppressed.

[0047] The honeycomb hole 412 can be cylindrical as shown in the figure, and the honeycomb hole 412 is coaxially connected with the first end of the air inlet 421 for complete alignment.

[0048] The inner diameter of the honeycomb hole 412 is smaller than the inner diameter of the air inlet 421. In other words, the inner diameter of the thinnest part of the honeycomb hole 412 is smaller than the inner diameter of the thinnest part of the air inlet 421. That is to say, the inner diameter of the end of the honeycomb hole 412 near the air inlet 421 is smaller than the inner diameter of the end of the air inlet 421 near the honeycomb hole 412. In this way, when the plasma flows in the reverse direction to the honeycomb hole 412, it will come into contact with the end face of the honeycomb plate 411 near the air inlet column 420 and be dissipated, so as to better suppress the generation of plasma in the air intake device 400.

[0049] The ratio of the inner diameter of the honeycomb hole 412 to the inner diameter of the air inlet 421 is less than or equal to 2, and the ratio of the inner diameter of the thinnest part of the honeycomb hole 412 to the inner diameter of the thinnest part of the air inlet 421 is less than or equal to 2. In other words, the ratio of the inner diameter of the end of the honeycomb hole 412 closest to the air inlet 421 to the inner diameter of the end of the air inlet 421 closest to the honeycomb hole 412 should be less than or equal to 2. This can avoid the phenomenon of insufficient reaction gas flow rate due to an excessively large ratio, thus ensuring the quality of the film.

[0050] Of course, in some embodiments, the honeycomb hole 412 can also be configured as a hole of other shapes as needed. The inner diameter of the finest part of the honeycomb hole 412 can also be greater than or equal to the inner diameter of the finest part of the air inlet 421. The honeycomb hole 412 can also be partially aligned with the first end of the air inlet 421 through off-axis communication.

[0051] In one embodiment, all air intakes 421 include a plurality of outer holes 425, as shown in the reference. Figure 5 The portions of each outer hole 425 that are far from the air inlet pipe 410 are all inclined outward along the radial direction of the air inlet column 420. That is, a portion of the central axis of the outer hole 425 is not parallel to the central axis of the air inlet column 420. This allows the air outlet direction of the outer hole 425 to be biased toward the side area 312 of the air inlet chamber 310, thereby improving the consistency of the flow velocity in each spray hole 320.

[0052] The inclined portion can be curved or straight. From the central axis of the air intake column 420 towards the edge, the inclination of each outer hole 425 gradually increases. Thus, the outer hole 425 farther from the central axis of the air intake column 420 has a larger inclination, so as to better deliver the reactive gas to the edge region 423 of the air intake chamber 310 and improve the uniformity of the film deposition thickness.

[0053] In addition, all the air intake holes 421 also include at least one intermediate hole 424, and all the outer holes 425 surround all the intermediate holes 424. The axial length of the intermediate hole 424 is correspondingly greater than the axial length of the outer holes 425. The central axis of the intermediate hole 424 is always in the same direction as the central axis of the air intake column 420. One of the intermediate holes 424 is coaxial with the air intake column 420 to further reduce the airflow velocity in the central area of ​​the air intake column 420.

[0054] In summary, this application discloses an air intake device 400 and a deposition apparatus incorporating the air intake device 400. An air intake column 420 connects the air intake pipe 410 to the spray plate 300. The reactive gas supplied from the air intake pipe 410 is directed to the spray plate 300 through multiple air intake holes 421 provided on the air intake column 420. Since the inner diameter of the air intake holes 421 is less than or equal to 1 mm, plasma generation of the reactive gas in the air intake holes 421 can be suppressed, thus avoiding particle formation in the thin film and abnormal temperature rise of the air intake device 400. Furthermore, the flow distribution of the reactive gas within the air intake chamber 310 can be homogenized, ensuring consistent flow rates in each spray hole 320 and thereby guaranteeing consistent thin film thickness.

[0055] It should be noted that, where there is no conflict, the features in the embodiments of this application can be combined with each other.

[0056] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An air intake device, characterized in that, It includes an air inlet pipe (410) and an air inlet column (420) connected to one end of the air inlet pipe (410). The end of the air inlet column (420) away from the air inlet pipe (410) is used to connect to the spray plate (300). The air inlet column (420) is provided with a plurality of air inlet holes (421), and the inner diameter of the air inlet holes (421) is less than or equal to 1 mm.

2. The air intake device according to claim 1, characterized in that, The density of each air intake hole (421) gradually increases from the central axis of the air intake column (420) toward the edge.

3. The air intake device according to claim 2, characterized in that, Multiple rings of holes are arranged outward from the central axis of the air intake column (420), and each ring of holes contains multiple air intake holes (421) arranged in a circular array around the central axis of the air intake column (420). In two adjacent rings of holes, the number of air intake holes (421) in the ring closer to the central axis of the air intake column (420) is less than the number of air intake holes (421) in the ring farther from the central axis of the air intake column.

4. The air intake device according to any one of claims 1-3, characterized in that, Along the line from the end where the intake column (420) is connected to the intake pipe (410) to the end away from the intake pipe (410), the inner diameter of the intake port (421) gradually increases; And / or, At least one end face of the air intake column (420) protrudes outward along the axial direction, and the axial length of each air intake hole (421) gradually decreases from the central axis of the air intake column (420) towards the edge.

5. The air intake device according to any one of claims 1-3, characterized in that, The air intake pipe (410) has an integrally formed honeycomb plate (411), the shape of which is adapted to the end face of the air intake column (420), and the honeycomb holes (412) of the honeycomb plate (411) are connected to the air intake hole (421).

6. The air intake device according to claim 5, characterized in that, The inner diameter of the honeycomb hole (412) is smaller than the inner diameter of the air inlet (421).

7. The air intake device according to claim 6, characterized in that, The ratio of the inner diameter of the honeycomb hole (412) to the inner diameter of the air inlet (421) is less than or equal to 2.

8. The air intake device according to any one of claims 1-3, characterized in that, All air intake holes (421) include multiple outer holes (425), and the portion of each outer hole (425) away from the air intake pipe (410) is inclined outward along the radial direction of the air intake column (420).

9. The air intake device according to claim 8, characterized in that, From the central axis of the intake column (420) toward the edge, the inclination of each outer hole (425) gradually increases.

10. A deposition apparatus, characterized in that, It includes a cavity (100), a spray plate (300), and an air intake device as described in any one of claims 1-9; The spray plate (300) is fixed to the cavity (100), and the spray plate (300) has a communicating air inlet cavity (310) and a plurality of spray holes (320); The end of the air intake column (420) away from the air intake pipe (410) is connected to the spray plate (300), and each air intake hole (421) is connected to the air intake chamber (310).

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