A photomask slice layout

Abstract

This invention relates to the field of integrated circuit manufacturing, and particularly to a photomask slicing layout, comprising an island distribution pattern. The island distribution pattern includes multiple island columns arranged along a first direction, and each island column includes multiple island cells along a second direction. The first direction is perpendicular to the second direction. The island cells in adjacent island columns are staggered, such that the projection of any island column in the first direction does not completely overlap with the projection of the adjacent island column in the first direction. This invention, by staggering multiple island columns in the island distribution pattern, significantly increases the probability of cutting the feature pattern (i.e., the island cell) when the photomask slicing layout is manually sliced, thereby increasing the probability of successful manual slicing profile characterization and ensuring low testing costs and high testing efficiency in slicing testing.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit manufacturing, and in particular to a photomask slicing layout. Background Technology

[0002] In the integrated circuit manufacturing process, the design and manufacturing of photomasks play a crucial role in the production results. During the manufacturing and process development of photomasks, staff typically need to understand how the current process reacts to each layer of material. Therefore, for each layer of the photomask, staff will first conduct trial production and perform slicing analysis on the resulting pattern, characterizing the longitudinal cross-section of the pattern to ensure the stability of the manufacturing process.

[0003] The pattern used to produce longitudinally sectional patterns is a photomask slicing pattern. Currently, after producing the corresponding pattern from the photomask slicing pattern, it is usually sliced ​​manually to obtain the longitudinal section. However, manual slicing often results in problems such as cut position misalignment and cut surface damage. This leads to failed section characterization, increases the number of slices, and raises costs.

[0004] Therefore, how to avoid the problem of cut surface damage and failure of cross-sectional characterization caused by cut position deviation is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] The purpose of this invention is to provide a photomask slice layout to solve the problems of cut surface damage and cross-sectional characterization failure caused by cut position offset in the prior art.

[0006] To solve the above-mentioned technical problems, the present invention provides a photomask slice layout, including an island distribution pattern;

[0007] The island distribution pattern includes multiple island columns arranged along a first direction, and each island column includes multiple island units along a second direction; the first direction is perpendicular to the second direction.

[0008] The isolated island units in adjacent island columns are staggered, such that the projection of any island column in the first direction does not completely overlap with the projection of the adjacent island column in the first direction.

[0009] Optionally, in the photomask slice layout, the island distribution pattern includes multiple recurring regions; the multiple recurring regions are arranged along the first direction;

[0010] Each of the said cyclic regions includes multiple island columns arranged along the first direction;

[0011] The arrangement of isolated units within all loop regions is identical;

[0012] The misalignment distance between adjacent island columns within a single loop region is the same;

[0013] Furthermore, the relationship between the isolated island unit and the misalignment distance satisfies the following equation:

[0014] D = (n-1) * h;

[0015] Where D is the side length of the island unit in the second direction, n is the number of island columns included in a single loop region, and h is the misalignment distance between adjacent island columns.

[0016] Optionally, in the photomask slice layout, the projections of all the island arrays in the first direction form a continuous first line segment.

[0017] Optionally, in the photomask slicing pattern, the photomask slicing pattern further includes a linear distribution pattern;

[0018] The linear distribution pattern includes multiple linear units arranged along a third direction, and the linear units extend along a fourth direction; the third direction is perpendicular to the fourth direction;

[0019] The linear unit is divided into multiple line segments of a first preset length by multiple blank intervals in the fourth direction.

[0020] Optionally, in the photomask slice layout, the line length of the linear unit ranges from 1 cm to 2 cm, including endpoint values.

[0021] Optionally, in the photomask slice layout, the first preset length ranges from 1.7 micrometers to 2.3 micrometers, including the endpoint values;

[0022] And / or, the length of the blanking interval in the fourth direction ranges from 20 nanometers to 50 nanometers, including the endpoint values.

[0023] Optionally, in the photomask slice layout, the photomask slice layout includes multiple graphic groups, and each graphic group includes the island distribution pattern, the linear distribution pattern, and line width annotations;

[0024] The line widths of the isolated island distribution patterns and the linear distribution patterns in a single graphic group are all the same;

[0025] The line width annotation records the line width of the corresponding graphic group.

[0026] Optionally, in the photomask slice layout, the linewidth is marked as a numerical pattern.

[0027] Optionally, in the photomask slice layout, within a single pattern group, the spacing between adjacent island columns is the same as the linewidth of the island columns, and the spacing between adjacent linear units is the same as the linewidth of the linear units.

[0028] Optionally, in the photomask slicing layout, the photomask slicing layout includes multiple chip regions, and each chip region includes multiple pattern groups with different linewidths.

[0029] Optionally, in the photomask slicing layout, each chip region further includes a corresponding region marker frame;

[0030] All graphic groups in the chip area are set inside the corresponding area marker frame;

[0031] The line width of the area marking frame is not less than 0.1 mm.

[0032] The photomask slicing pattern provided by this invention includes an island distribution pattern; the island distribution pattern includes multiple island columns arranged along a first direction, and each island column includes multiple island units along a second direction; the first direction is perpendicular to the second direction; the island units in adjacent island columns are staggered, so that the projection of any island column in the first direction does not completely overlap with the projection of the adjacent island column in the first direction. This invention, by staggering multiple island columns in the island distribution pattern, significantly increases the probability of cutting the feature pattern (i.e., the island unit) when the photomask slicing pattern is manually sliced, improving the probability of successful manual slicing profile characterization and ensuring low testing cost and high testing efficiency in slicing testing. Attached Figure Description

[0033] To more clearly illustrate the technical solutions of the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 A schematic diagram of an isolated, independently distributed pattern in a specific embodiment of the photomask slicing layout provided by the present invention;

[0035] Figure 2 A schematic diagram of a densely distributed island pattern in a specific embodiment of the photomask slicing layout provided by the present invention;

[0036] Figure 3 A schematic diagram of a transparent isolated / densely distributed pattern of a specific embodiment of the photomask slicing layout provided by the present invention;

[0037] Figure 4 A schematic diagram of an opaque isolated / densely distributed pattern of a specific embodiment of the photomask slicing layout provided by the present invention;

[0038] Figure 5 A schematic diagram of a transparent / opaque densely distributed pattern in a specific embodiment of the photomask slice layout provided by the present invention;

[0039] Figure 6 This is a partially enlarged schematic diagram of the opaque region of a linear distribution pattern in a specific embodiment of the photomask slicing layout provided by the present invention.

[0040] Figure 7 A schematic diagram of the structure of a graphic group for a specific embodiment of the photomask slicing layout provided by the present invention;

[0041] Figure 8 A schematic diagram of the structure of a single chip region in a specific embodiment of the photomask slicing layout provided by the present invention;

[0042] Figure 9 This is a schematic diagram showing the distribution of the chip region in a specific embodiment of the photomask slicing layout provided by the present invention.

[0043] The diagram includes 10-island array, 11-isolated island unit, 21-line unit, 22-blank interval area, 100-chip area, 110-graphic group, 111-line width label, and 120-area marker frame. Detailed Implementation

[0044] To enable those skilled in the art to better understand the present invention, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0045] The core of this invention is to provide a photomask slicing layout, the structural schematic diagram of one specific embodiment of which is shown below. Figures 1 to 2 As shown, this is referred to as Specific Implementation Method 1, which includes an island distribution pattern;

[0046] The island distribution pattern includes multiple island columns 10 arranged along a first direction, and each island column 10 includes multiple island units 11 along a second direction; the first direction is perpendicular to the second direction.

[0047] The isolated island units 11 in adjacent island columns 10 are staggered so that the projection of any island column 10 in the first direction does not completely overlap with the projection of the adjacent island column 10 in the first direction.

[0048] The island distribution pattern typically includes two types: isolated island distribution pattern (Contact ISO) and dense island distribution pattern (Contact Dense). Figure 1 This is a schematic diagram of the isolated island distribution pattern. The slice locations are marked with dots and short dashed lines. Of course, in this invention, "isolated island distribution" and "densely distributed islands" only indicate the distribution characteristics of the pattern and do not mean that the structure corresponding to the pattern must necessarily protrude from the planar background to form an "island." For example, the isolated island distribution pattern might correspond to a through-hole pattern, etc. Figure 1 As can be seen, at least two isolated island units 11 are cut open to obtain the corresponding feature graphic cross-sections; Figure 2 This is a structural schematic diagram of the densely distributed island pattern, with the slice positions also marked by dots and short dashed horizontal lines.

[0049] The length (dimension along the second direction) of a single island column 10 is typically between 1 cm and 2 cm. The island distribution pattern includes at least 40 island columns 10. For the densely distributed island pattern, the misalignment distance between adjacent island columns 10 is preferably 1 / 4 or 1 / 2 of the dimension of a single island unit 11 in the second direction. For the isolated island distribution pattern, the interval between adjacent island columns 10 can be 10 micrometers, and the interval between adjacent island units 11 within the same island column 10 is also 10 micrometers. The misalignment distance between two adjacent island columns 10 can be 3 / 4 of the dimension of a single island unit 11 in the second direction.

[0050] In one specific implementation, the projections of all the island arrays 10 in the first direction form a continuous first line segment.

[0051] In this specific embodiment, the projections of all the island arrays 10 in the first direction form a continuous first line segment. That is, regardless of where the slice position is located in the region corresponding to the island distribution pattern, at least one of the island units 11 will be cut to obtain the corresponding feature pattern, which further improves the probability of successful profile characterization.

[0052] In another preferred embodiment, the island distribution pattern includes multiple cyclic regions; the multiple cyclic regions are arranged along the first direction;

[0053] Each of the said loop regions includes a plurality of island columns 10 arranged along the first direction;

[0054] The arrangement of all island units 11 within the loop region is the same;

[0055] The misalignment distance between adjacent island columns 10 within a single loop region is the same;

[0056] Furthermore, the relationship between the isolated island unit 11 and the misalignment distance satisfies the following equation (1):

[0057] D = (n-1) * h; (1)

[0058] Where D is the side length of the island unit 11 in the second direction, n is the number of island columns 10 included in a single loop region, and h is the misalignment distance between adjacent island columns 10.

[0059] In this preferred embodiment, the isolated island distribution pattern is divided into multiple island units 11 distributed in the same cyclic region, which greatly reduces the design difficulty of the isolated island distribution pattern. At the same time, the misalignment of the island columns 10 in a single cyclic region is limited, that is, the misalignment distance of two adjacent island columns 10 is the same, and after all the island columns 10 in the same cyclic region are misaligned in the same direction, the total misalignment distance between the first island column 10 and the last island column 10 is exactly the side length of the isolated island unit 11 in the second direction. That is, no matter where the slice is taken, at least one isolated island unit 11 in a single cyclic region is cut, which further ensures a high probability of successful cross-sectional characterization.

[0060] The photomask slicing pattern provided by this invention includes an island distribution pattern; the island distribution pattern includes multiple island columns 10 arranged along a first direction, and each island column 10 includes multiple island units 11 along a second direction; the first direction is perpendicular to the second direction; the island units 11 in adjacent island columns 10 are staggered, so that the projection of any island column 10 in the first direction does not completely overlap with the projection of the adjacent island column 10 in the first direction. This invention staggers the multiple island columns 10 in the island distribution pattern, significantly increasing the probability of cutting the feature pattern (i.e., the island unit 11) when the photomask slicing pattern is manually sliced, thereby increasing the probability of successful manual slicing profile characterization and ensuring low testing cost and high testing efficiency in slicing testing.

[0061] Based on Specific Implementation Method 1, further limitations are made on other patterns on the photomask slice layout to obtain Specific Implementation Method 2, the corresponding structural schematic diagram of which is shown below. Figures 3 to 6 As shown,

[0062] In addition to the aforementioned island distribution pattern, the photomask slice layout also includes a linear distribution pattern;

[0063] The linear distribution pattern includes multiple linear units 21 arranged along a third direction, and the linear units 21 extend along a fourth direction; the third direction is perpendicular to the fourth direction;

[0064] The length of the linear unit 21 ranges from 1 cm to 2 cm, including the endpoint values;

[0065] The linear unit 21 is divided into multiple line segments of a first preset length by multiple blank intervals 22 in the fourth direction.

[0066] The difference between this specific embodiment and the above specific embodiment is that the shape of the linear distribution pattern on the photomask slice layout is also limited in this specific embodiment. The rest of the structure is the same as the above specific embodiment, and will not be described in detail here.

[0067] The linear distribution pattern typically includes three types of patterns: clear ISO / Dense, dark ISO / Dense, and clear / dark Dense. For example, the linear distribution pattern is usually a pattern corresponding to the active region, gate, or space. Figure 3 This is a schematic diagram of the structure of the light-transmitting isolated / densely distributed pattern. Figure 4 This is a schematic diagram of the structure of the opaque isolated / densely distributed pattern. Figure 5 This is a structural schematic diagram of the densely distributed light-transmitting / opaque pattern. It should be noted that, as the name suggests, the blank interval area 22 is set on the opaque pattern, as shown in... Figure 4 In the opaque isolated / densely distributed pattern shown, the blank interval area 22 is not set on the hollowed-out strip area, but on the opaque area between the hollowed-out strip areas. A partially enlarged schematic diagram of the opaque area is shown below. Figure 6 As shown. Both translucent isolated / densely distributed patterns and opaque isolated / densely distributed patterns include isolated patterns and semi-isolated patterns. The interval between these isolated and semi-isolated patterns is called the isolated / semi-isolated interval. Figure 3 and Figure 4 The value is represented by 'x', and is generally not less than 10 micrometers. The light-transmitting / opaque densely distributed pattern contains at least 40 light-transmitting linear units 21 and at least 40 opaque linear units 21.

[0068] For the linear distribution pattern, the ratio of the line width of the light-transmitting area (blank part in the figure) to the line width of the opaque area (dark part in the figure) is usually 1:1, but it can also be other values, such as 1.5:1.7, etc., which are not limited here.

[0069] Of course, the third direction and the fourth direction can be the same as or different from the first direction or the second direction, and can be selected according to the actual situation. This invention does not limit them here.

[0070] In a preferred embodiment, the first preset length ranges from 1.7 micrometers to 2.3 micrometers, including endpoint values ​​such as any one of 1.70 micrometers, 2.00 micrometers, or 2.30 micrometers; the length of the blanking interval 22 in the fourth direction ranges from 20 nanometers to 50 nanometers, including endpoint values ​​such as any one of 20.0 nanometers, 33.1 nanometers, or 50.0 nanometers.

[0071] In related technologies, the line length of the linear distribution pattern of the photomask slice is usually not too long (usually not exceeding 3000 micrometers). This is because excessively long continuous linear conductive structures can cause electron aggregation, which can lead to electrostatic damage during scanning of the slice cross-section by the machine, reducing the accuracy of the scanned image and rendering it useless. However, it is conceivable that such long linear units 21 are difficult to cut accurately by hand, and are easily cut crookedly, failing to capture the feature pattern and causing the cross-section characterization to fail. In this specific embodiment, the length of the linear unit 21 is intentionally lengthened to 1 to 2 centimeters. Linear units 21 of this length are clearly visible to the naked eye, improving human visual recognition and basically eliminating the possibility of manual slicing misalignment. At the same time, by setting the blank interval area 22 at intervals along the length direction of the linear unit 21 (i.e., the fourth direction), electrostatic damage caused by electron aggregation during scanning can also be effectively avoided, improving the accuracy of the image obtained by the machine scanning. The above parameter range is the optimal range after a large number of theoretical calculations and actual tests. Within the range of the first preset length, the small segments of lines separated by the blank interval 22 will not cause electron accumulation. The length range of the blank interval 22 in the fourth direction does not affect normal electrical conduction and can effectively avoid electron accumulation. Of course, it can also be adjusted according to the actual situation. This invention does not limit it.

[0072] In a preferred embodiment, the photomask slice layout includes multiple graphic groups 110, and each graphic group 110 includes the island distribution pattern, the linear distribution pattern, and the line width annotation 111;

[0073] The line widths of the island distribution patterns and the linear distribution patterns in a single graphic group 110 are all the same;

[0074] The line width label 111 records the line width of the corresponding graphic group 110.

[0075] In this preferred embodiment, multiple pattern groups 110 are set within the photomask slice layout. Each pattern group 110 includes various distribution patterns (specifically, the island distribution pattern and the linear distribution pattern). The linewidths of the distribution patterns corresponding to different pattern groups 110 are different. That is, the photomask slice layout in this preferred embodiment can be used in all high-end and low-end processes, and the MTT (the difference between the average linewidth measurement and the target value) can be calculated by ASI (linewidth measurement after photoresist removal). In the pattern group 110, a minimum spacing of 10 micrometers is required between different distribution patterns to avoid proximity effects affecting the measurement results.

[0076] Furthermore, the line width label 111 is a numerical pattern. In this preferred embodiment, the line width of the graphic is directly written as a number below the corresponding graphic, allowing staff to easily determine the line width of graphic group 110 visually, greatly facilitating operation and data collection, and improving testing efficiency. (See reference...) Figure 7 , Figure 7 This is a schematic diagram of a graphic group 110, which, from left to right, includes densely distributed isolated island patterns, independently distributed isolated island patterns, densely distributed translucent / opaque patterns, densely distributed translucent isolated / dense patterns, and densely distributed opaque isolated / dense patterns. Below each of these patterns, a line width label 111 (outlined with a dashed line in the diagram) is also provided. Of course, the patterns within the graphic group 110 can be adjusted according to actual conditions, and this invention does not impose any limitations on this.

[0077] Preferably, in a single pattern group 110, the spacing between adjacent island columns 10 is the same as the line width of the island column 10, and the spacing between adjacent linear units 21 is the same as the line width of the linear unit 21. Having the spacing between adjacent island columns 10 and the spacing between adjacent linear units 21 equal to the line width of the linear unit 21 further improves the accuracy of the measurement results, while simplifying the production process of the photomask slicing pattern and improving production efficiency.

[0078] Furthermore, the photomask slice layout includes multiple chip regions 100, each chip region 100 including multiple pattern groups 110 with different linewidths. By setting multiple chip regions 100 within the same photomask slice layout, and each chip region 100 including multiple pattern groups 110 with different linewidths, the sufficient number of chip regions 100 ensures that each of the multiple processes in the testing process can be supplied. Multiple tests can be completed using only one photomask slice layout, further improving testing efficiency.

[0079] In addition, each of the chip regions 100 also includes a corresponding region marker frame 120;

[0080] All the graphic groups 110 in the chip area 100 are set inside the corresponding area marker frame 120;

[0081] The line width of the area marking frame 120 is not less than 0.1 mm.

[0082] This preferred embodiment is equivalent to adding the region marking frame 120 to the edge of each chip region 100. The line width of the region marking frame 120 is not less than 0.1 mm, which ensures that the region marking frame 120 can be identified by the naked eye of the operator. This helps the operator to quickly locate the slicing area, improves the slicing speed, avoids slicing errors, and increases the probability of successful cross-sectional characterization. A structural schematic diagram of a single chip region 100 is shown below. Figure 8 As shown. Typically, the size of a single chip region 100 can be 1.6 cm * 2.6 cm, and the linewidth of the pattern group 110 within a single chip region 100 ranges from 50 nanometers (nm) to 3000 nanometers, including endpoint values; multiple chip regions 100 can be arranged in an array on the photomask slice layout, such as... Figure 9 The 20 chip regions 100 shown form a 4*5 array. The above parameter ranges are optimal values ​​after extensive theoretical calculations and practical verification; of course, they can be adjusted according to actual circumstances.

[0083] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section.

[0084] It should be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0085] The photomask slicing layout provided by this invention has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are merely for the purpose of helping to understand the method and core ideas of this invention. It should be noted that those skilled in the art can make various improvements and modifications to this invention without departing from its principles, and these improvements and modifications also fall within the protection scope of the claims of this invention.

Claims

1. A photomask slice layout, characterized in that, Including patterns of isolated islands; The island distribution pattern includes multiple island columns arranged along a first direction, and each island column includes multiple island units along a second direction; the first direction is perpendicular to the second direction. The isolated island units in adjacent island columns are staggered, such that the projection of any island column in the first direction does not completely overlap with the projection of the adjacent island column in the first direction.

2. The photomask slicing layout as described in claim 1, characterized in that, The projections of all the islands in the first direction form a continuous first line segment.

3. The photomask slicing layout as described in claim 2, characterized in that, The island distribution pattern includes multiple cyclic regions; the multiple cyclic regions are arranged along the first direction; Each of the said cyclic regions includes multiple island columns arranged along the first direction; The arrangement of isolated units within all loop regions is identical; The misalignment distance between adjacent island columns within a single loop region is the same; Furthermore, the relationship between the isolated island unit and the misalignment distance satisfies the following equation: D = (n-1) * h; Where D is the side length of the island unit in the second direction, n is the number of island columns included in a single loop region, and h is the misalignment distance between adjacent island columns.

4. The photomask slicing layout as described in claim 1, characterized in that, The photomask slice layout also includes a linear distribution pattern; The linear distribution pattern includes multiple linear units arranged along a third direction, and the linear units extend along a fourth direction; the third direction is perpendicular to the fourth direction; The linear unit is divided into multiple line segments of a first preset length by multiple blank intervals in the fourth direction.

5. The photomask slicing layout as described in claim 4, characterized in that, The length of the linear unit ranges from 1 cm to 2 cm, including the endpoint values.

6. The photomask slicing layout as described in claim 4, characterized in that, The first preset length ranges from 1.7 micrometers to 2.3 micrometers, including the endpoint values; And / or, the length of the blanking interval in the fourth direction ranges from 20 nanometers to 50 nanometers, including the endpoint values.

7. The photomask slicing layout as described in claim 4, characterized in that, The photomask slice layout includes multiple graphic groups, and each graphic group includes the island distribution pattern, the linear distribution pattern, and the line width annotation; The line widths of the isolated island distribution patterns and the linear distribution patterns in a single graphic group are all the same; The line width annotation records the line width of the corresponding graphic group.

8. The photomask slicing layout as described in claim 6, characterized in that, In a single graphic group, the spacing between adjacent island columns is the same as the line width of the island column, and the spacing between adjacent linear units is the same as the line width of the linear unit.

9. The photomask slicing layout as described in claim 6, characterized in that, The photomask slice layout includes multiple chip regions, and each chip region includes multiple pattern groups with different linewidths.

10. The photomask slicing layout as described in claim 9, characterized in that, Each of the chip regions also includes a corresponding region marker frame; All graphic groups in the chip area are set inside the corresponding area marker frame; The line width of the area marking frame is not less than 0.1 mm.

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