Opportunity cost model development method

By selecting exposure target points of multiple nodes on a mask, establishing a focus energy matrix, determining the optimal focal length and exposure energy, and generating a shared OPC model, the problem of long development cycle and high cost of OPC models for 55nm and 65nm nodes is solved, realizing efficient and economical multi-node modeling.

CN122308007APending Publication Date: 2026-06-30GTA SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GTA SEMICON CO LTD
Filing Date
2026-04-28
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

In existing technologies, the development of OPC models for 55nm and 65nm nodes suffers from long development cycles, high costs, and high resource consumption, and the independent development model leads to low development efficiency.

Method used

By selecting exposure target points for multiple nodes on the same mask, a focusing energy matrix is ​​established, the optimal focal length and exposure energy are determined, and a shared OPC model is generated, enabling multiple nodes to share a set of lithography process conditions and modeling datasets.

Benefits of technology

It effectively shortens the development cycle of OPC models, reduces repetitive experiments and computational resource consumption, improves the consistency and efficiency of multi-node modeling, and ensures the uniformity of cross-node and cross-linewidth graph correction and the robustness of the model under complex working conditions.

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Abstract

This application provides an OPC model development method, including: designing modeling patterns corresponding to multiple nodes on a mask; exposing a pre-fabricated wafer using different exposure energies and focal lengths based on the mask to form a focusing energy matrix; collecting key linewidth data of exposure target points in each exposure field and analyzing and determining the optimal focal length shared by each node; fixing the optimal focal length, exposing the pre-fabricated wafer using multiple exposure energies, collecting key linewidth values ​​of exposure target points under different exposure energies, and screening the optimal exposure energy for which the key linewidths of exposure target points corresponding to different nodes all meet the design requirements, and the group of exposure target points that meet the design requirements under the optimal exposure energy; determining the optimal exposure target point group for each node based on the group of exposure target points that meet the design requirements under the optimal exposure energy; and generating an OPC model. This application achieves the development of an OPC model shared by multiple nodes in a single step.
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