Thin film, method for manufacturing the same, optoelectronic device, method for manufacturing the same, display device

Abstract

This application discloses a thin film and its preparation method, an optoelectronic device and its preparation method, and a display device. The material of the thin film includes inorganic particles. The thin film described in this application has low roughness and good surface smoothness.

Description

Technical Field

[0001] This application relates to the field of optoelectronic device technology, and in particular to a thin film and its preparation method, an optoelectronic device and its preparation method, and a display device. Background Technology

[0002] Thin films prepared using inorganic nanoparticles are widely used in various fields; however, due to the structural characteristics of inorganic nanoparticles, the surface roughness of the films is relatively high. Summary of the Invention

[0003] In view of the above, this application provides a thin film and a method for preparing the same, an optoelectronic device and a method for preparing the same, and a display device.

[0004] In a first aspect, embodiments of this application provide a thin film, the material of which includes inorganic particles, and the surface roughness of which is 0.9 to 1.05 nm.

[0005] Secondly, embodiments of this application also provide a method for preparing a thin film, comprising the following steps:

[0006] Provide pre-formed films including inorganic particles; and

[0007] The preformed film is annealed, and the annealing process includes meson radiation to obtain a thin film.

[0008] Thirdly, embodiments of this application also provide a method for fabricating an optoelectronic device, comprising the following steps:

[0009] Provide the first electrode;

[0010] A functional layer is fabricated on the first electrode, the functional layer comprising one or more sub-functional layers; and

[0011] A second electrode is fabricated on the functional layer to obtain an optoelectronic device;

[0012] Wherein, at least one of the one or more sub-functional layers is the thin film, or at least one sub-functional layer is prepared using the method for preparing the thin film.

[0013] Fourthly, embodiments of this application also provide an optoelectronic device, including a first electrode, a functional layer, and a second electrode stacked together. The functional layer includes one or more sub-functional layers, wherein at least one of the one or more sub-functional layers is the thin film, or at least one sub-functional layer is prepared by the method for preparing the thin film, or the optoelectronic device is prepared by the method for preparing the optoelectronic device according to any one of claims 7 to 9.

[0014] Fifthly, embodiments of this application also provide another optoelectronic device, including a first electrode, a functional layer, and a second electrode stacked together, wherein the functional layer includes one or more sub-functional layers, and at least one of the one or more sub-functional layers is subjected to meson radiation treatment.

[0015] Sixthly, embodiments of this application also provide a display device, the display device including the optoelectronic device.

[0016] The film described in this application has low roughness and good surface flatness. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart of a thin film preparation method provided in an embodiment of this application;

[0019] Figure 2 This is a flowchart illustrating a method for fabricating an optoelectronic device according to an embodiment of this application;

[0020] Figure 3 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application;

[0021] Figure 4 This is a schematic diagram of another optoelectronic device provided in the embodiments of this application.

[0022] Figure label:

[0023] Optoelectronic device 100; first electrode 10; second electrode 20; electron injection layer 30, electron transport layer 40, light emission layer 50, hole transport layer 60, hole injection layer 70; functional layer 101. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0025] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0026] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0027] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0028] In this application, the term "on" forming another layer on a certain layer is a broad concept. It can mean that the formed other layer is adjacent to a certain layer, or it can mean that there are other spacer structures between the other layer and the certain layer. For example, when a second electrode is formed "on" a first charge carrier functional layer, the term "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or it can mean that there are other spacer structures between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0029] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0030] Annealing is frequently required during the fabrication of film layers in optoelectronic devices to improve their luminescence performance, oxidation resistance, and thermal stability. Currently, the most common annealing method is thermal annealing (i.e., high-temperature annealing). However, the high temperatures involved in thermal annealing can negatively impact the device. For example, thermal annealing can easily induce the decomposition, degradation, or structural changes of the organic layer. Furthermore, it may lead to an increase in defects and structural damage near the organic / inorganic interface. Additionally, thermal annealing may affect the performance of the luminescent layer and electrodes. Therefore, an annealing process that does not involve high temperatures is needed.

[0031] The technical solution of this application is as follows:

[0032] Firstly, please refer to Figure 1 This application provides a method for preparing a thin film, comprising the following steps:

[0033] Step S11: Provide a pre-formed membrane comprising inorganic particles; and

[0034] Step S12: Anneal the preformed film, the annealing process including meson radiation, to obtain a thin film.

[0035] The thin film preparation method described in this application uses meson radiation to anneal a pre-formed film. On the one hand, meson radiation can fine-tune the structure and electronic properties of inorganic particles, causing dislocation rearrangement within the inorganic particles, thereby improving the carrier transport performance and / or luminescence performance of the inorganic particles, and thus improving the brightness, luminous efficiency, color purity, stress resistance, and lifetime of the optoelectronic device including the thin film. On the other hand, meson radiation also helps to repair defects in inorganic particles, such as non-radiative recombination centers, by changing their electronic structure or physical position, thereby improving the performance of the thin film, and thus improving the luminous efficiency and lifetime of the optoelectronic device including the thin film. Furthermore, meson radiation annealing can also make the arrangement of inorganic particles in the prepared thin film more uniform, thereby reducing the roughness of the thin film and improving its flatness, thereby improving the stability, stress resistance, carrier transport performance, and optical performance of the thin film, and further improving the flatness, brightness, luminous efficiency, color purity, stress resistance, and lifetime of the optoelectronic device including the thin film. Furthermore, when the thin film is fabricated on the functional layer of the optoelectronic device, the meson radiation can also improve the interface quality between the thin film and the functional layer, thereby further enhancing the flatness, brightness, luminous efficiency, color purity, stress resistance, and lifespan of the optoelectronic device.

[0036] In step S11:

[0037] The inorganic particles include one or more of N-type inorganic particles, P-type inorganic particles, and quantum dots.

[0038] In some embodiments, the inorganic particles are N-type inorganic particles used for electronic functional layers. It is understood that in this case, the thin film can be an electronic functional thin film, such as an electron injection thin film or an electron transport thin film.

[0039] In some embodiments, the inorganic particles are P-type inorganic particles used in the hole-functional layer. It is understood that, in this case, the thin film can be a hole-functional thin film, such as a hole injection thin film or a hole transport thin film.

[0040] In some embodiments, the inorganic particles are quantum dots. It is understood that in this case, the thin film can be a quantum dot thin film, which can be a light-emitting thin film, a light conversion thin film, a photoelectric conversion film, a quantum dot filter film, etc.

[0041] In some embodiments, the average particle size of the N-type inorganic particles is 6 to 12 nm, for example, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, and any range between any two of the stated values.

[0042] In some embodiments, the average particle size of the P-type inorganic particles is 6 to 12 nm, for example, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, and any range between any two of the stated values.

[0043] In some embodiments, the average particle size of the quantum dots is 6 to 12 nm, for example, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, and any range between any two of the stated values.

[0044] In some embodiments, the pre-formed film is a dry film, which is beneficial for achieving better effects on meson radiation, that is, for enabling meson radiation to more effectively improve the fine-tuning of the structure and electronic properties of inorganic particles, causing dislocation rearrangement inside the inorganic particles, thereby improving the charge carrier transport performance and / or luminescence performance of the inorganic particles, helping to repair defects in inorganic particles, and also helping to make the arrangement of inorganic particles in the prepared film more uniform.

[0045] The N-type inorganic particles include, but are not limited to, one or more of the first doped metal oxide particles and the first undoped metal oxide particles. The material of the first undoped metal oxide particles includes, but is not limited to, one or more of ZnO, TiO2, and SnO2. The metal oxides in the first doped metal oxide particles include, but are not limited to, one or more of ZnO, TiO2, and SnO2. The doping elements in the first doped metal oxide particles include, but are not limited to, one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga.

[0046] The P-type inorganic particles include, but are not limited to, one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped metal oxide particles and the metal oxides in the second-undoped metal oxide particles each independently include, but are not limited to, one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second-doped metal oxide particles include, but are not limited to, one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include, but are not limited to, one or more of CuS, MoS3, and WS3. The metal selenides include, but are not limited to, one or more of MoSe3 and WSe3. The metal nitrides include, but are not limited to, P-type gallium nitride.

[0047] The quantum dots may include, but are not limited to, one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots. The core-shell quantum dots may have one or more shell layers. The materials for the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell materials of the core-shell quantum dots may include, but are not limited to, one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2. The perovskite quantum dots may include, but are not limited to, doped or undoped inorganic perovskite quantum dots, or organic-inorganic hybrid perovskite quantum dots. The general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb2+ Sn 2 + Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

[0048] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0049] In some embodiments, the surface of the inorganic particles further includes ligands, including but not limited to substituted or unsubstituted C6-C. 24 Fatty acids, substituted or unsubstituted C6-C 24 Fatty amines, substituted or unsubstituted C6-C 24Aliphatic thiols, substituted or unsubstituted C6-C 24 Aliphatic sulfides, substituted or unsubstituted C6-C 24 Aliphatic phosphine, substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides, substituted or unsubstituted C8-C8 phosphine oxides 20 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphorous acid and substituted or unsubstituted C6-C 24 At least one of the fatty phosphites, wherein the substituent is selected from at least one of C1-C6 alkyl, C1-C6 alkoxy and halogen.

[0050] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty acids include at least one of the following: decanoic acid, undecenoic acid, tetradecanoic acid, oleic acid, linoleic acid, and stearic acid.

[0051] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic thiols include at least one of octylthiol, dodecylthiol, and octadecylthiol.

[0052] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty amines include at least one of oleylamine, octadecylamine, octylamine, dioctylamine, and trioctylamine.

[0053] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphines include trioctylphosphine.

[0054] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides include trioctylphosphine oxides.

[0055] The method for depositing inorganic particles can be implemented using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0056] In at least some embodiments, the method for preparing the preform includes:

[0057] a. Providing an inorganic particle dispersion, said inorganic particle dispersion comprising inorganic particles and a solvent; and

[0058] b. Deposit the inorganic particle dispersion to form a wet film, and dry it to obtain the pre-made film.

[0059] The drying process can be any known method used for film drying, such as heat drying, natural drying, vacuum drying, freeze drying, etc.

[0060] The solvents include, but are not limited to, one or more of the following: alcohols, ethers, esters, ketones, amines, hydrocarbons, chlorinated organic solvents, and sulfur-containing organic solvents. The alcohols include, but are not limited to, one or more of the following: methanol, ethanol, isopropanol, butanol, n-pentanol, isoamyl alcohol, and tetrahydrofuran. The ethers include, but are not limited to, one or more of the following: diethyl ether, ethylene glycol monomethyl ether, isopropyl ether, n-butyl ether, diphenyl ether, and dioxane. The esters include, but are not limited to, one or more of the following: propylene glycol methyl ether acetate, methyl formate, ethyl acetate, and dimethyl carbonate. The ketones include, but are not limited to, one or more of the following: acetone and methyl ethyl ketone. The amines include, but are not limited to, one or more of the following: N,N-dimethylformamide (DMF), hexamethylphosphoramide, tetramethylethylenediamine, triethylamine, tributylamine, trioctylamine, formamide, and pyridine. The hydrocarbons include, but are not limited to, one or more of the following: hexane, benzene, toluene, cyclohexane, and hexane. The chlorinated organic solvents include, but are not limited to, one or more of chloroform, dichloromethane, trifluoroacetic acid, trichloroethylene, dichloroethane, and carbon tetrachloride. The sulfur-containing organic solvents include, but are not limited to, one or more of dimethyl sulfoxide (DMSO) and carbon disulfide.

[0061] In step S12:

[0062] In some embodiments, the mesons used in the meson radiation include, but are not limited to, one or more of the following: π mesons, K mesons, η mesons, η' mesons, D mesons, B mesons, and J / ψ mesons. The π mesons include, but are not limited to, π... 0 meson, π + meson, π - One or more of the following mesons. The K mesons include, but are not limited to, K. 0 meson, K + meson, K - One or more of the following mesons. The η meson includes, but is not limited to, η. 0 meson, η + meson, η - One or more of the following mesons. The D mesons include, but are not limited to, D... 0 meson, D +meson, Ds meson, One or more of the following mesons. The B mesons include, but are not limited to, BB. 0 meson, B + meson, B - One or more of mesons and Bs mesons.

[0063] In some embodiments, the beam energy of the meson radiation is 100–300 MeV, for example, 100 MeV, 120 MeV, 130 MeV, 150 MeV, 160 MeV, 180 MeV, 200 MeV, 220 MeV, 240 MeV, 250 MeV, 260 MeV, 280 MeV, 300 MeV, and any range between any two of these values; the beam intensity of the meson radiation... The beam energy is 1–5 μA, for example, 1 μA, 1.5 μA, 2 μA, 2.5 μA, 3 μA, 3.5 μA, 4 μA, 4.5 μA, 5 μA, and any range between any two of these values; the meson radiation time is 5–60 s, for example, 5 s, 10 s, 15 s, 20 s, 25 s, 30 s, 35 s, 40 s, 45 s, 50 s, 55 s, 60 s, and any range between any two of these values. Within the specified beam energy, beam intensity, and time range, it is beneficial to improve the fine-tuning of the structure and electronic properties of inorganic particles, induce dislocation rearrangement within the inorganic particles, thereby improving the carrier transport performance and / or luminescence performance of the inorganic particles, helping to repair defects in the inorganic particles, and also helping to make the arrangement of inorganic particles in the prepared thin film more uniform.

[0064] In some embodiments, the annealing process is performed under vacuum conditions.

[0065] In some embodiments, the preparation method further includes electromagnetic field treatment of the preform. The meson radiation and the electromagnetic field treatment have a common processing stage; that is, the meson radiation is performed in a first time period, and the electromagnetic field treatment is performed in a second time period, with the first and second time periods at least partially overlapping.

[0066] Electromagnetic field treatment can control molecular arrangement and improve the crystallinity of inorganic particles. Simultaneously, annealing the pre-fabricated film using both meson radiation and electromagnetic field treatment allows for better optimization of the arrangement and interactions of inorganic particles at the macroscopic level. The synergistic effect of both methods results in a more uniform distribution of inorganic particles, a smoother film, improved interfacial quality between the film and its contact layers, enhanced stress resistance, repair of defects in inorganic particles, and improved carrier transport and / or luminescence performance of the inorganic particles in the film. Ultimately, this leads to higher performance in optoelectronic devices incorporating the film. The annealing process offers several advantages. Firstly, it improves brightness, luminous efficiency, color purity, stress resistance, and lifespan. Secondly, the process generates heat during meson radiation, leading to temperature increases. Electromagnetic field treatment allows for precise temperature control during annealing, minimizing damage to the underlying film layer caused by excessively high temperatures. Thirdly, simultaneous annealing of the pre-fabricated film using both meson radiation and electromagnetic field treatments allows for the modification and optimization of inorganic particles, thus shortening film preparation time and increasing yield.

[0067] In some embodiments, the electromagnetic field frequency of the electromagnetic field treatment is 1–5 kHz, for example, 1 kHz, 1.5 kHz, 2 kHz, 2.5 kHz, 3 kHz, 3.5 kHz, 4 kHz, 4.5 kHz, 5 kHz, and any range between any two of these values; the electromagnetic field strength of the electromagnetic field treatment is 1–5 mT, for example, 1 mT, 1.5 mT, 2 mT, 2.5 mT, 3 mT, 3.5 mT, 4 mT, 4.5 mT, 5 mT, 5.5 mT, 6 mT, and any range between any two of these values. Within the specified electromagnetic field frequency and strength range, it is beneficial to better optimize the arrangement and interaction of inorganic particles and to more precisely control the temperature during the annealing process.

[0068] In at least some embodiments, the overlap time between the first time period and the second time period is 5 to 30 seconds, for example, 5 seconds, 6 seconds, 7 seconds, 8 seconds, 9 seconds, 10 seconds, 12 seconds, 13 seconds, 15 seconds, 16 seconds, 18 seconds, 20 seconds, 22 seconds, 23 seconds, 25 seconds, 26 seconds, 28 seconds, 30 seconds, and any range between the two values.

[0069] In at least some embodiments, the first time period and the second time period completely overlap, and the duration of the first time period and the second time period is 5 to 30 seconds, for example, 5s, 6s, 7s, 8s, 9s, 10s, 12s, 13s, 15s, 16s, 18s, 20s, 22s, 23s, 25s, 26s, 28s, 30s, and any range between any two of these values. In other words, the meson radiation and the electromagnetic field treatment are performed simultaneously for 5 to 30 seconds.

[0070] Understandably, when the annealing process includes both meson radiation and electromagnetic field treatment, the order of meson radiation and electromagnetic field treatment is not limited. Meson radiation treatment can be performed first, followed by electromagnetic field treatment; electromagnetic field treatment can be performed first, followed by meson radiation; or meson radiation and electromagnetic field treatment can be started simultaneously, as long as both have a common stage.

[0071] Secondly, embodiments of this application also provide a thin film prepared by the above-described preparation method.

[0072] The film contains inorganic particles, the types of which are described above and will not be repeated here.

[0073] In some embodiments, the surface of the inorganic particles also has ligands, which are described above and will not be repeated here.

[0074] The stress resistance range of the film is 100 to 115 MPa, for example, 100 MPa, 102 MPa, 103 MPa, 105 MPa, 106 MPa, 108 MPa, 110 MPa, 112 MPa, 113 MPa, 115 MPa, and any range between any two of the above values.

[0075] The surface roughness of the thin film is 0.9 to 1.05 nm, for example, 0.9 nm, 0.95 nm, 1.0 nm, 1.05 nm, and any range between any two of the above values.

[0076] The thin film described in this application has low surface roughness and high stress resistance, and the inorganic particles in the thin film have fewer defects on their surfaces. The thin film has good carrier transport performance and / or light emission performance, which can enable optoelectronic devices including the thin film to have high brightness, high luminous efficiency, high color purity, high stress resistance and long life.

[0077] Thirdly, please refer to Figures 2 to 4 This application provides a method for fabricating an optoelectronic device, comprising the following steps:

[0078] Step S21: Provide the first electrode 10;

[0079] Step S22: A functional layer 101 is prepared on the first electrode 10. The functional layer 101 includes one or more sub-functional layers, wherein at least one of the one or more sub-functional layers is prepared by the thin film preparation method described above.

[0080] Step S23: Prepare a second electrode 20 on the functional layer 101 to obtain the optoelectronic device 100.

[0081] In the method for fabricating the optoelectronic device described in this application, at least one sub-functional layer is prepared using the thin film preparation method described above, that is, at least one sub-functional layer is obtained by annealing a pre-formed film using meson radiation. On the one hand, meson radiation can fine-tune the structure and electronic properties of inorganic particles, causing dislocation rearrangement within the particles, thereby improving their carrier transport and / or luminescence performance, and thus enhancing the brightness, luminous efficiency, color purity, stress resistance, and lifetime of optoelectronic devices. On the other hand, meson radiation also helps repair defects in inorganic particles, such as non-radiative recombination centers, by altering their electronic structure or physical location, thereby improving the performance of the sub-functional layer, and thus enhancing the luminous efficiency and lifetime of optoelectronic devices. Furthermore, meson radiation annealing can make the arrangement of inorganic particles in the prepared sub-functional layer more uniform, thereby reducing the roughness and improving the flatness of the sub-functional layer, thus enhancing its stability, stress resistance, carrier transport performance, and optical performance, and further improving the flatness, brightness, luminous efficiency, color purity, stress resistance, and lifetime of optoelectronic devices. Furthermore, when a sub-functional layer is prepared on other functional layers of an optoelectronic device using the thin film preparation method of this application, the meson radiation can also improve the interface quality between the sub-functional layer and the other functional layers, thereby further improving the flatness, brightness, luminous efficiency, color purity, stress resistance, and lifespan of the optoelectronic device.

[0082] In the fabrication of optoelectronic devices, simultaneous meson radiation and electromagnetic field treatment can control molecular arrangement and improve the crystallinity of inorganic particles. Simultaneously, annealing the pre-fabricated film using both meson radiation and electromagnetic field treatment allows for several benefits. Firstly, meson radiation improves the structure and electronic properties of inorganic particles at the microscopic level, while electromagnetic field treatment optimizes their arrangement and interactions at the macroscopic level. The synergistic effect of both results in a more uniform distribution of inorganic particles, a smoother film, improved interface quality between the film and its contact layers, enhanced stress resistance, repair of defects in inorganic particles, and improved carrier transport and / or luminescence performance of the inorganic particles in the film. This, in turn, enhances the overall performance of the film. The film-based optoelectronic devices exhibit higher brightness, higher luminous efficiency, higher color purity, higher stress resistance, and longer lifespan. On the other hand, since heat is generated during meson radiation, causing the temperature to rise, electromagnetic field treatment allows for more precise control of the annealing temperature. This minimizes damage to the underlying film layer caused by excessively high temperatures during meson radiation annealing. Furthermore, simultaneously using meson radiation and electromagnetic field treatment to anneal the pre-fabricated film allows for the modification and optimization of inorganic particles, thus shortening the film preparation time and increasing the yield.

[0083] The one or more sub-functional layers include one or more of the following: electron injection layer 30, electron transport layer 40, light emission layer 50, hole transport layer 60, and hole injection layer 70.

[0084] At least one sub-functional layer of the optoelectronic device described in this application is prepared using the thin film preparation method described above, and thus has properties such as high brightness, high luminous efficiency, high color purity, high stress resistance, and high lifetime.

[0085] It is understood that when the electron injection layer 30 or the electron transport layer 40 is prepared using the thin film preparation method described above, the inorganic particles are the N-type inorganic particles described above.

[0086] It is understood that when the hole transport layer 60 or the hole injection layer 70 is prepared using the thin film preparation method described above, the inorganic particles are the P-type inorganic particles described above.

[0087] It is understood that when the light-emitting layer 50 is prepared using the thin film preparation method described above, the inorganic particles are the quantum dots described above.

[0088] In some embodiments, the first electrode 10 is the anode and the second electrode 20 is the cathode. In other embodiments, the first electrode 10 is the cathode and the second electrode 20 is the anode.

[0089] The method for forming the second electrode 20 described in this application can be implemented using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0090] The first electrode 10 and the second electrode 20 are electrodes known in the art for use in optoelectronic devices. For example, they may each be, independently including but not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The material of the doped metal oxide electrode may be, but is not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., where " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode comprising sequentially stacked AZO, Ag, and AZO layers. The material of the elemental metal electrode may include, but is not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrodes include, but are not limited to, Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0091] In some embodiments, the metal layer in the composite electrode, the elemental metal electrode, and the alloy electrode does not exceed 35 nm.

[0092] In some embodiments, the composite electrode, the elemental metal electrode, and the alloy electrode have a visible light transmittance of 90% or greater.

[0093] In some embodiments, when the electron injection layer 30 or the electron transport layer 40 is not prepared using the thin film preparation method described in this application, the material of the electron injection layer 30 or the electron transport layer 40 can be a material known in the art for use in electronic functional layers, for example, it can be independently selected from, but not limited to, one or more inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional materials include, but are not limited to, one or more of the first doped metal oxide particles, the first undoped metal oxide particles, the IIB-VIA group semiconductor materials, the IIIA-VA group semiconductor materials, and the IB-IIIA-VIA group semiconductor materials described above. The organic electronic functional materials include, but are not limited to, one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives (PCBM).

[0094] In some embodiments, when the hole transport layer 60 or the hole injection layer 70 is not prepared using the thin film preparation method described in this application, the material of the hole transport layer 60 or the hole injection layer 70 can be a material known in the art for hole functional layers, for example, each can be independently selected from, but not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl) N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)co-(4,4... '-(N-(4-sec-butylphenyl)diphenylamine))](TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiroNPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9 9'-spiro-omeTAD, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline](TAPC), 1,3-bis(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-)phenylenevinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,The following are included: 12-hexaazabenzophenanthrene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS-doped s-MoO3 derivatives (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinone dimethylane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, and one or more of the following: the second doped metal oxide particles described above, the second undoped metal oxide particles described above, the metal sulfides described above, the metal selenides described above, and the metal nitrides described above.

[0095] When the light-emitting layer 50 is not prepared using the thin film preparation method described in this application, the material of the light-emitting layer 50 may be a material known in the art for use in light-emitting layers, such as one or more of organic light-emitting materials and quantum dots as described above. The organic light-emitting materials may include, but are not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (excitoplex) light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0096] It is understood that when the optoelectronic device 100 also includes functional layers that are conventionally used in optoelectronic devices to help improve the performance of the optoelectronic device, such as electron blocking layers, hole blocking layers, interface modification layers, etc., the method of fabricating the optoelectronic device 100 may also include the step of fabricating the above-mentioned functional layers using conventional techniques in the art.

[0097] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emission requirements of the optoelectronic device 100.

[0098] In some embodiments, the optoelectronic device preform further includes a substrate, and the first electrode 10 is disposed on the substrate.

[0099] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the substrate material may include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0100] It is understood that the optoelectronic device 100 can be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 can be a quantum dot optoelectronic device or an organic optoelectronic device.

[0101] Fourthly, please refer to Figures 3-4 This application embodiment also provides an optoelectronic device 100 prepared by the above preparation method, including a first electrode 10, a functional layer 101 and a second electrode 20 stacked together.

[0102] The functional layer 101 includes one or more sub-functional layers, wherein at least one of the one or more sub-functional layers is prepared by the thin film preparation method described above, or at least one sub-functional layer is the thin film described above.

[0103] The one or more sub-functional layers include one or more of the following: electron injection layer 30, electron transport layer 40, light emission layer 50, hole transport layer 60, and hole injection layer 70.

[0104] The first electrode 10, electron injection layer 30, electron transport layer 40, light-emitting layer 50, hole transport layer 60, hole injection layer 70, and second electrode 20 are as described above and will not be repeated here.

[0105] It is understood that the optoelectronic device 100 may also include functional layers that are conventionally used in optoelectronic devices to help improve the performance of the optoelectronic device, such as electron blocking layers, hole blocking layers, interface modification layers, etc.

[0106] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emission requirements of the optoelectronic device 100.

[0107] The optoelectronic device described in this application has properties such as high brightness, high luminous efficiency, high color purity, high stress resistance, and long lifespan.

[0108] Fifthly, please refer to Figures 3-4 This application also provides an optoelectronic device 100, including a first electrode 10, a functional layer 101 and a second electrode 20 stacked together. The functional layer 101 includes one or more sub-functional layers, wherein at least one of the one or more sub-functional layers has undergone meson radiation treatment.

[0109] In some embodiments, the sub-functional layer that has undergone meson radiation treatment is further treated with an electromagnetic field.

[0110] In some embodiments, the one or more sub-functional layers include one or more of the following: electron injection layer 30, electron transport layer 40, light emission layer 50, hole transport layer 60, and hole injection layer 70.

[0111] In some embodiments, the electron injection layer 30 and / or the electron transport layer 40 are subjected to meson radiation treatment, or the electron injection layer 30 and / or the electron transport layer 40 are subjected to both meson radiation treatment and electromagnetic field treatment.

[0112] In some embodiments, the hole transport layer 60 and / or the hole injection layer 70 are subjected to meson radiation treatment, or the hole transport layer 60 and / or the hole injection layer 70 are subjected to both meson radiation treatment and electromagnetic field treatment.

[0113] In some embodiments, the light-emitting layer 50 is subjected to meson radiation treatment, or the light-emitting layer 50 is subjected to both meson radiation treatment and electromagnetic field treatment.

[0114] Sixthly, this application also relates to a display device, which includes the optoelectronic device 100.

[0115] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0116] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0117] Thin Film Example 1

[0118] CdS quantum dot material (concentration of 20 mg / mL) was spin-coated on a substrate at a speed of 2000 rpm for 30 seconds to obtain a pre-fabricated film with a thickness of 25 nm.

[0119] The pre-fabricated thin film is subjected to meson radiation, wherein the meson is π. 0 Meson, beam energy 200MeV, beam intensity 3μA, time 30s, to obtain thin film.

[0120] Thin Film Example 2

[0121] This embodiment is basically the same as thin film embodiment 1, except that the beam energy of meson radiation in this embodiment is 100 MPa.

[0122] Thin Film Example 3

[0123] This embodiment is basically the same as thin film embodiment 1, except that the beam energy of meson radiation in this embodiment is 300 MPa.

[0124] Thin Film Example 4

[0125] This embodiment is basically the same as thin film embodiment 1, except that the beam intensity of meson radiation in this embodiment is 1 μA.

[0126] Thin Film Example 5

[0127] This embodiment is basically the same as thin film embodiment 1, except that the beam intensity of meson radiation in this embodiment is 5 μA.

[0128] Thin Film Example 6

[0129] This embodiment is basically the same as thin film embodiment 1, except that in this embodiment, K is used. + Meson substitution in Example 1 π 0 meson.

[0130] Thin Film Example 7

[0131] This embodiment is basically the same as thin film embodiment 1, except that in this embodiment, K-mesons are used to replace π in embodiment 1. 0 meson.

[0132] Thin Film Example 8

[0133] This embodiment is basically the same as Thin Film Embodiment 1, except that in this embodiment, electromagnetic field treatment is performed simultaneously with meson radiation. Specifically, the preparation method of the thin film in this embodiment includes:

[0134] CdS quantum dot material (concentration 20 mg / mL) was spin-coated on a substrate at a speed of 2000 rpm for 30 seconds to obtain a pre-fabricated film with a thickness of 25 nm.

[0135] The pre-fabricated thin film is simultaneously subjected to meson radiation and electromagnetic field treatment, both starting and ending at the same time, with a duration of 5 seconds and mesons being π. 0 Mesons, beam energy 200MeV, beam intensity 3μA, electromagnetic field frequency of 1kHz and electromagnetic field intensity of 1mT were used to obtain thin films.

[0136] Thin Film Example 9

[0137] This embodiment is basically the same as thin film embodiment 8, except that in this embodiment, the electromagnetic field frequency for electromagnetic field treatment is 2.5 kHz.

[0138] Thin Film Example 10

[0139] This embodiment is basically the same as thin film embodiment 8, except that the electromagnetic field frequency for electromagnetic field treatment is 5kHz in this embodiment.

[0140] Thin Film Example 11

[0141] This embodiment is basically the same as thin film embodiment 8, except that in this embodiment, the electromagnetic field strength for electromagnetic field treatment is 2.5mT.

[0142] Thin Film Example 12

[0143] This embodiment is basically the same as thin film embodiment 8, except that the electromagnetic field strength for electromagnetic field treatment is 5mT in this embodiment.

[0144] Thin Film Example 13

[0145] MoO3 material was spin-coated on a substrate at a speed of 2000 rpm for 30 seconds to obtain a pre-formed film with a thickness of 25 nm.

[0146] The pre-fabricated thin film is subjected to meson radiation, wherein the meson is π. 0 Meson, beam energy 200MeV, beam intensity 3μA, time 30s, to obtain thin film.

[0147] Thin Film Example 14

[0148] This embodiment is basically the same as thin film embodiment 13, except that in this embodiment, electromagnetic field treatment is performed simultaneously with meson radiation. Specifically, the thin film preparation method of this embodiment includes:

[0149] MoO3 material was spin-coated on a substrate at a speed of 5000 rpm for 30 seconds to obtain a pre-formed film with a thickness of 20 nm.

[0150] The pre-fabricated thin film is subjected to meson irradiation for 5 seconds, where the mesons are π. 0 Mesons, beam energy 200MeV, beam intensity 3μA, electromagnetic field frequency of 1kHz and electromagnetic field intensity of 1mT were used to obtain thin films.

[0151] Thin Film Example 15

[0152] NiO material (8 mg / mL) was spin-coated onto a substrate at a speed of 3000 rpm for 30 seconds to obtain a pre-formed film with a thickness of 20 nm.

[0153] The pre-fabricated thin film is subjected to meson radiation, wherein the meson is π. 0 Meson, beam energy 200MeV, beam intensity 3μA, time 30s, to obtain thin film.

[0154] Thin Film Example 16

[0155] This embodiment is basically the same as thin film embodiment 15, except that in this embodiment, electromagnetic field treatment is performed simultaneously with meson radiation. Specifically, the thin film preparation method of this embodiment includes:

[0156] NiO material (8 mg / mL) was spin-coated onto a substrate at a speed of 3000 rpm for 30 seconds to obtain a pre-formed film with a thickness of 20 nm.

[0157] The pre-fabricated thin film is subjected to meson irradiation for 5 seconds, where the mesons are π. 0 Mesons, beam energy 200MeV, beam intensity 3μA, electromagnetic field frequency of 1kHz and electromagnetic field intensity of 1mT were used to obtain thin films.

[0158] Thin Film Example 17

[0159] An ethanol solution of ZnO (30 mg / mL) was spin-coated onto a substrate at a speed of 4000 rpm for 30 seconds to obtain a pre-fabricated film with a thickness of 35 nm.

[0160] The pre-fabricated thin film is subjected to meson radiation, wherein the meson is π. 0 Meson, beam energy 200MeV, beam intensity 3μA, time 30s, to obtain thin film.

[0161] Thin Film Example 18

[0162] This embodiment is basically the same as thin film embodiment 17, except that in this embodiment, electromagnetic field treatment is performed simultaneously with meson radiation. Specifically, the thin film preparation method of this embodiment includes:

[0163] An ethanol solution of ZnO (30 mg / mL) was spin-coated onto a substrate at a speed of 4000 rpm for 30 seconds to obtain a pre-fabricated film with a thickness of 35 nm.

[0164] The pre-fabricated thin film is subjected to meson irradiation for 5 seconds, where the mesons are π. 0 Mesons, beam energy 200MeV, beam intensity 3μA, electromagnetic field frequency of 1kHz and electromagnetic field intensity of 1mT were used to obtain thin films.

[0165] Thin Film Comparative Example 1

[0166] CdS quantum dot material (20 mg / mL) was spin-coated onto a substrate at 2000 rpm and annealed at 100 °C for 5 minutes to obtain a thin film with a thickness of 25 μm.

[0167] Thin Film Comparative Example 2

[0168] MoO3 material was spin-coated onto a substrate at a speed of 2000 rpm for 30 seconds, followed by heating at 150°C for 15 minutes to obtain a thin film with a thickness of 25 nm.

[0169] Thin Film Comparative Example 3

[0170] NiO material (8 mg / mL) was spin-coated onto a substrate at 3000 rpm for 30 seconds, followed by heating at 120°C for 10 minutes to obtain a thin film with a thickness of 20 nm.

[0171] Thin film comparative example 4

[0172] An ethanol solution (30 mg / mL) of ZnO was spin-coated onto a substrate at 4000 rpm for 30 seconds, followed by 10... -2 After standing for 15 minutes under MPa conditions, a thin film with a thickness of 35 nm was obtained.

[0173] Device Example 1

[0174] Step S1: Provide an ITO anode substrate;

[0175] Step S2: Spin-coat PEDOT:PSS material onto the anode at a speed of 5000 rpm for 30 seconds, followed by heating at 150°C for 15 minutes to obtain a hole injection layer with a thickness of 30 nm.

[0176] Step S3: Spin-coat TFB material (8 mg / mL) onto the hole injection layer at 3000 rpm for 30 seconds, then heat at 120°C for 10 minutes to obtain a hole transport layer with a thickness of 20 nm.

[0177] Step S4: Prepare a light-emitting layer on the hole transport layer using the thin film preparation method of Thin Film Example 1;

[0178] Step S5: Spin-coat an ethanol solution of ZnO (30 mg / mL) onto the luminescent layer at 4000 rpm for 30 seconds, followed by 10... -2 After standing for 15 minutes under MPa conditions, an electron transport layer with a thickness of 35 nm was obtained.

[0179] Step S6: Through thermal evaporation, the vacuum level is not higher than 3×10. -4 Pa, Ag is deposited on the electron transport layer at a deposition rate of 1 angstrom / second for 200 seconds to obtain a cathode with a thickness of 20 nm;

[0180] Step S7: Encapsulate with epoxy resin to obtain the optoelectronic device.

[0181] Device Examples 2-12

[0182] Device Examples 2 to 12 are the same as Device Example 1, except that the light-emitting layer of Device Examples 2 to 12 is prepared using the same preparation method as that of Thin Film Examples 2 to 12.

[0183] Device Examples 13-14

[0184] Device Examples 13-14 are the same as Device Example 1, except that the hole injection layer in Device Examples 13-14 is prepared using the same method as in Thin Film Examples 13-14, and the light-emitting layer in Device Examples 13-14 is prepared using the following method:

[0185] CdS quantum dot material (20 mg / mL) was spin-coated onto the hole transport layer at 2000 rpm and heated at 100°C for 5 minutes to obtain the luminescent layer.

[0186] Device Examples 15-16

[0187] Device Examples 15-16 are the same as Device Example 1, except that the hole transport layer in Device Examples 15-16 is prepared using the same method as in Thin Film Examples 15-16, and the light-emitting layer in Device Examples 15-16 is prepared using the following method:

[0188] CdS quantum dot material (20 mg / mL) was spin-coated onto the hole transport layer at 2000 rpm and heated at 100°C for 5 minutes to obtain the luminescent layer.

[0189] Device Examples 17-18

[0190] Device Examples 17-18 are the same as Device Example 1, except that the electron transport layer in Device Examples 17-18 is prepared using the same method as in Thin Film Examples 17-18, and the method for preparing the light-emitting layer in Device Examples 17-18 is as follows:

[0191] CdS quantum dot material (20 mg / mL) was spin-coated onto the hole transport layer at 2000 rpm and heated at 100°C for 5 minutes to obtain the luminescent layer.

[0192] Device Example 19

[0193] Device Example 19 is the same as Device Example 1, except that Device Example 19 uses the preparation method of Thin Film Example 13 to prepare the hole injection layer, the preparation method of Thin Film Example 15 to prepare the hole transport layer, the preparation method of Thin Film Example 1 to prepare the light emission layer, and the preparation method of Thin Film Example 17 to prepare the electron transport layer.

[0194] Device Example 20

[0195] Device Example 20 is the same as Device Example 1, except that Device Example 20 uses the preparation method of Thin Film Example 14 to prepare the hole injection layer, the preparation method of Thin Film Example 16 to prepare the hole transport layer, the preparation method of Thin Film Example 8 to prepare the light emission layer, and the preparation method of Thin Film Example 18 to prepare the electron transport layer.

[0196] Device Comparison Example 1

[0197] Device Comparative Example 1 is the same as Device Example 1, except that the light-emitting layer of Device Comparative Example 1 is prepared using the same method as that of Thin Film Comparative Example 1.

[0198] Device Comparison Example 2

[0199] Device Comparative Example 2 is the same as Device Example 13, except that the hole injection layer of Device Comparative Example 2 is prepared using the same method as that of Thin Film Comparative Example 2.

[0200] Device Comparison Example 3

[0201] Device Comparative Example 3 is the same as Device Example 15, except that the hole transport layer of Device Comparative Example 3 is prepared using the same method as that of Thin Film Comparative Example 3.

[0202] Optoelectronic device performance testing:

[0203] The maximum brightness L of the optoelectronic devices in Examples 1-20 and Comparative Examples 1-3 max The device lifespan (T95), lifespan (T95@1000nit), current efficiency (CE), device stress resistance, and device surface roughness were tested respectively. The test results are shown in Table 1.

[0204] The test method for current efficiency (CE) is as follows: using the Fostar FPD optical property measurement equipment, an efficiency test system is built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabVIEW to measure parameters such as voltage, current, brightness, and emission spectrum, and the current efficiency is calculated.

[0205] The surface roughness of the device was measured using an atomic force microscope (AFM).

[0206] The maximum brightness was measured using a PR650 luminance meter, with a constant driving current of 2mA.

[0207] The lifetime T95 and lifetime T95@1000nit test methods are as follows: In CDA gas, under constant current drive, the time it takes for the device brightness to decay to a certain percentage of its maximum brightness is measured. The time for the brightness to decay to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at low brightness is obtained by fitting the decay fitting formula. For example, the lifetime at 1000 nits is denoted as T95@1000nits, and the calculation formula is as follows:

[0208]

[0209] Among them, T95 L The lifespan at low brightness is typically taken as the lifespan at 1000 nits, T95. H The lifetime at high brightness, i.e., the measured lifetime, L H L is the maximum brightness that the device accelerates to. L The typical value is 1000 nits, where A is the acceleration factor, which is set to 1.7.

[0210] The constant current is 2mA;

[0211] Table 1:

[0212]

[0213]

[0214] As shown in Table 1:

[0215] Compared to the optoelectronic device of Comparative Example 1, the optoelectronic devices of Examples 1-7, 17, and 19 exhibit higher maximum brightness, longer lifetime, higher current efficiency, higher stress resistance, and lower surface roughness. Compared to the optoelectronic device of Comparative Example 2, the optoelectronic device of Example 13 exhibits higher maximum brightness, longer lifetime, higher current efficiency, higher stress resistance, and lower surface roughness. Compared to the optoelectronic device of Comparative Example 3, the optoelectronic device of Example 15 exhibits higher maximum brightness, longer lifetime, higher current efficiency, higher stress resistance, and lower surface roughness. It is evident that using meson radiation annealing during the fabrication of one or more of the quantum dot emitting layer, hole injection layer, hole transport layer, and electron transport layer can result in higher stress resistance and lower surface roughness for these layers, thereby effectively improving the maximum brightness, lifetime, current efficiency, stress resistance, and effectively reducing the surface roughness of the device. The reasons may be as follows: Firstly, meson radiation can fine-tune the structure and electronic properties of inorganic particles, causing dislocation rearrangement within the inorganic particles, thereby improving the carrier transport performance and / or luminescence performance of the inorganic particles, and thus improving the brightness, luminous efficiency, color purity, stress resistance, and lifetime of optoelectronic devices. Secondly, meson radiation can also help repair defects in inorganic particles, such as non-radiative recombination centers, by changing their electronic structure or physical position, thereby improving the performance of the sub-functional layer, and thus improving the luminous efficiency and lifetime of optoelectronic devices. Thirdly, meson radiation annealing can also make the arrangement of quantum dots in the prepared quantum dot emitting layer more uniform, thereby reducing the roughness of the quantum dot emitting layer and improving its flatness, thereby improving the stability, stress resistance, carrier transport performance, and optical performance of the quantum dot emitting layer, and thus further improving the flatness, brightness, luminous efficiency, color purity, stress resistance, and lifetime of optoelectronic devices. Furthermore, the meson radiation can also improve the interface quality between the quantum dot luminescent layer and other functional layers, which can further enhance the flatness, brightness, luminous efficiency, color purity, stress resistance and lifespan of optoelectronic devices.

[0216] Compared to the optoelectronic device of Example 1, the optoelectronic devices of Examples 8-12 and 18 exhibit higher maximum brightness, longer lifetime, higher current efficiency, higher stress resistance, and lower surface roughness. Compared to the optoelectronic device of Example 2, the optoelectronic device of Example 14 exhibits higher maximum brightness, longer lifetime, higher current efficiency, higher stress resistance, and lower surface roughness. Compared to the optoelectronic device of Example 3, the optoelectronic device of Example 16 exhibits higher maximum brightness, longer lifetime, higher current efficiency, higher stress resistance, and lower surface roughness. It is evident that by employing meson radiation annealing combined with electromagnetic field treatment during the fabrication of one or more of the quantum dot emitting layer, hole injection layer, hole transport layer, and electron transport layer, the quantum dot emitting layer, hole injection layer, hole transport layer, and electron transport layer can achieve higher stress resistance and lower surface roughness, thereby more effectively improving the maximum brightness, lifetime, current efficiency, stress resistance, and effectively reducing the surface roughness of the device. The reasons may be as follows: Firstly, meson radiation can improve the structure and electronic properties of inorganic particles at the microscopic level, while electromagnetic field treatment can optimize the arrangement and interaction of inorganic particles at the macroscopic level. The synergistic effect of the two can make the distribution of inorganic particles more uniform, the film smoother, improve the interface quality of the film and the layer in contact with it, improve the stress resistance of the film, repair defects of inorganic particles, and improve the carrier transport performance and / or luminescence performance of inorganic particles in the film. In this way, the optoelectronic device including the film can have higher brightness, higher luminous efficiency, higher color purity, higher stress resistance, and longer lifespan. Secondly, since heat is generated during meson radiation, the temperature rises. Electromagnetic field treatment can more precisely control the temperature during the annealing process. This can minimize the damage to the film layer below the film caused by excessively high temperatures generated by meson radiation while annealing the film using meson radiation. Thirdly, using both meson radiation and electromagnetic field treatment to anneal the pre-fabricated film can shorten the film preparation time and increase the yield because both meson radiation and electromagnetic field treatment can modify and optimize inorganic particles at the same time.

[0217] The technical solution of this application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A thin film, characterized in that, The material of the thin film includes inorganic particles, and the surface roughness of the thin film is 0.9 to 1.05 nm.

2. The thin film as described in claim 1, characterized in that, The film has a stress resistance range of 100–115 MPa; and / or The inorganic particles include one or more of N-type inorganic particles, P-type inorganic particles, and quantum dots.

3. The thin film as described in claim 2, characterized in that, The average particle size of the N-type inorganic particles is 6–12 nm; and / or The average particle size of the P-type inorganic particles is 6–12 nm; and / or The average particle size of the quantum dots is 6–12 nm; and / or The N-type inorganic particles include one or more of a first doped metal oxide particle and a first undoped metal oxide particle. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, and SnO2. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, and SnO2. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; and / or The P-type inorganic particles include one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped and second-undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second-doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes one or more of CuS, MoS3, and WS3. The metal selenide includes one or more of MoSe3 and WSe3. The metal nitride includes P-type gallium nitride; and / or The quantum dots include one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots. The core-shell quantum dots comprise one or more shell layers. The materials of the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell materials of the core-shell quantum dots respectively include one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, and ZnS. One or more of the following compounds: SnS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the group IV-VI compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, Sn One or more of STe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, wherein the III-V compound comprises GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, and GaAl The perovskite quantum dots are selected from one or more of NP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the group I-III-VI compounds include one or more of CuInS2, CuInSe2, and AgInS2, and the perovskite quantum dots include doped or undoped inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots, wherein the general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following, wherein the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2 + Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; and / or The surface of the inorganic particles also includes ligands, which include substituted or unsubstituted C6-C ligands. 24 Fatty acids, substituted or unsubstituted C6-C 24 Fatty amines, substituted or unsubstituted C6-C 24 Aliphatic thiols, substituted or unsubstituted C6-C 24 Aliphatic sulfides, substituted or unsubstituted C6-C 24 Aliphatic phosphine, substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides, substituted or unsubstituted C8-C8 phosphine oxides 20 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphorous acid and substituted or unsubstituted C6-C 24 At least one of the fatty phosphites, wherein the substituent is selected from at least one of C1-C6 alkyl, C1-C6 alkoxy, and halogen; the substituted or unsubstituted C6-C 24 Fatty acids include at least one of decanoic acid, undecenoic acid, tetradecanoic acid, oleic acid, linoleic acid, and stearic acid; the substituted or unsubstituted C6-C... 24 Aliphatic thiols include at least one of octylthiol, dodecylthiol, and octadecylthiol; the substituted or unsubstituted C6-C 24 Fatty amines include at least one of oleylamine, octadecylamine, octylamine, dioctylamine, and trioctylamine; the substituted or unsubstituted C6-C... 24 Aliphatic phosphines include trioctylphosphine; the substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides include trioctylphosphine oxides.

4. A method for preparing a thin film, characterized in that, Includes the following steps: Provide pre-formed films including inorganic particles; and The preformed film is annealed, and the annealing process includes meson radiation to obtain a thin film.

5. The preparation method according to claim 4, characterized in that, The mesons used in the meson radiation include one or more of the following: π meson, K meson, η meson, η' meson, D meson, B meson, and J / ψ meson; and / or The annealing process is performed under vacuum conditions; and / or The beam energy of the meson radiation is 100–300 MeV; and / or The beam intensity of the meson radiation is 1–5 μA; and / or The duration of the meson radiation is 5–60 s; and / or The inorganic particles include one or more of N-type inorganic particles, P-type inorganic particles, and quantum dots; and / or The pre-formed film is a dry film; and / or The preparation method further includes subjecting the preform to electromagnetic field treatment.

6. The preparation method according to claim 5, characterized in that, The π meson includes π 0 meson, π + meson, π - One or more of the mesons; and / or The K meson includes K 0 meson, K + meson, K - One or more of the mesons; and / or The η meson includes η 0 meson, η + meson, η - One or more of the mesons; and / or The D meson includes D 0 meson, D + meson, Ds meson, One or more of the mesons; and / or The B meson includes B 0 meson, B + meson, B - One or more of mesons and Bs mesons; and / or The electromagnetic field frequency of the electromagnetic field treatment is 1–5 kHz; and / or The electromagnetic field strength of the electromagnetic field treatment is 1–5 mT; and / or The meson radiation occurs within a first time period, and the electromagnetic field treatment occurs within a second time period. The first and second time periods at least partially overlap, or they completely overlap. The duration of the first and second time periods is 5–30 s, and the duration of the second time period is 5–30 s; and / or The N-type inorganic particles include one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The first undoped metal oxide particles are composed of one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles are composed of one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles are one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or The P-type inorganic particles include one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped and second-undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second-doped metal oxide particles includes one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfide includes one or more of CuS, MoS3, and WS3. The metal selenide includes one or more of MoSe3 and WSe3. The metal nitride includes P-type gallium nitride; and / or The quantum dots include one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots. The core-shell quantum dots comprise one or more shell layers. The materials of the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell materials of the core-shell quantum dots respectively include one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, and ZnS. One or more of the following compounds: SnS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the group IV-VI compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, Sn One or more of STe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, wherein the III-V compound comprises GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, and GaAl The perovskite quantum dots are selected from one or more of NP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the group I-III-VI compounds include one or more of CuInS2, CuInSe2, and AgInS2, and the perovskite quantum dots include doped or undoped inorganic perovskite quantum dots or organic-inorganic hybrid perovskite quantum dots, wherein the general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following, wherein the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is an organic amine cation, including CH3(CH2). n-2 NH3 + or [NH3(CH2) n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; and / or The average particle size of the N-type inorganic particles is 6–12 nm; and / or The average particle size of the P-type inorganic particles is 6–12 nm; and / or The average particle size of the quantum dots is 6–12 nm.

7. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: Provide the first electrode; A functional layer is fabricated on the first electrode, the functional layer comprising one or more sub-functional layers; and A second electrode is fabricated on the functional layer to obtain an optoelectronic device; In this embodiment, at least one of the one or more sub-functional layers is prepared using the thin film preparation method described in any one of claims 4 to 6.

8. The preparation method according to claim 7, characterized in that, The one or more sub-functional layers include one or more of the following: an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer; wherein... When the electron injection layer and / or electron transport layer are prepared by the thin film preparation method according to any one of claims 4 to 6, the inorganic particles are N-type inorganic particles; When the hole transport layer and / or hole injection layer are prepared using the thin film preparation method according to any one of claims 4 to 6, the inorganic particles are P-type inorganic particles. When the light-emitting layer is prepared using the thin film preparation method according to any one of claims 4 to 6, the inorganic particles are the quantum dots.

9. The preparation method according to claim 7, characterized in that, The first electrode and the second electrode each independently include a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal element electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrode includes Au:Mg alloy electrode and Ag:Mg alloy electrode.

10. An optoelectronic device, characterized in that, The device includes a first electrode, a functional layer, and a second electrode stacked together. The functional layer includes one or more sub-functional layers. At least one of the one or more sub-functional layers is a thin film as described in any one of claims 1 to 3, or at least one sub-functional layer is prepared by the method for preparing a thin film as described in any one of claims 4 to 6, or the optoelectronic device is prepared by the method for preparing an optoelectronic device as described in any one of claims 7 to 9.

11. The optoelectronic device as described in claim 10, characterized in that, The one or more sub-functional layers include one or more of the following: an electron injection layer, an electron transport layer, a light emission layer, a hole transport layer, and a hole injection layer; When the electron injection layer and / or electron transport layer is a thin film according to any one of claims 1 to 3 or is prepared by the preparation method of a thin film according to any one of claims 4 to 6, the inorganic particles are N-type inorganic particles; When the hole transport layer and / or hole injection layer is the thin film according to any one of claims 1 to 3 or is prepared by the preparation method of the thin film according to any one of claims 4 to 6, the inorganic particles are P-type inorganic particles. When the light-emitting layer is the thin film according to any one of claims 1 to 3 or is prepared by the preparation method of the thin film according to any one of claims 4 to 6, the inorganic particles are quantum dots.

12. An optoelectronic device, characterized in that, It includes a first electrode, a functional layer, and a second electrode stacked together. The functional layer includes one or more sub-functional layers, wherein at least one of the one or more sub-functional layers has undergone meson radiation treatment.

13. The optoelectronic device as described in claim 12, characterized in that, The sub-functional layers that have undergone meson radiation treatment are also treated with electromagnetic fields. Optionally, the meson radiation is performed in a first time period, and the electromagnetic field treatment is performed in a second time period, wherein the first time period and the second time period at least partially overlap, or the first time period and the second time period completely overlap.

14. The optoelectronic device as described in claim 13, characterized in that, The one or more sub-functional layers include one or more of the following: an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a hole injection layer; wherein... The electron injection layer and / or electron transport layer are subjected to meson radiation treatment, or the electron injection layer and / or electron transport layer are subjected to both meson radiation treatment and electromagnetic field treatment; and / or The hole transport layer and / or hole injection layer are subjected to meson radiation treatment, or the hole transport layer and / or hole injection layer are subjected to both meson radiation treatment and electromagnetic field treatment; and / or The light-emitting layer is subjected to meson radiation treatment, or the light-emitting layer is subjected to both meson radiation treatment and electromagnetic field treatment.

15. A display device, characterized in that, The display device includes the optoelectronic device according to any one of claims 10 to 14.

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