Glass substrate metallization structure and metallization method

Abstract

This invention relates to a glass substrate metallization structure and metallization method. The invention includes a glass substrate; a functional seed layer disposed on the surface of the glass substrate; and a copper metallization layer disposed on the side of the functional seed layer facing away from the glass substrate. The functional seed layer is obtained by nitrogen conversion treatment of a titanium oxide precursor layer. The titanium oxide precursor layer is formed on the surface of the glass substrate by chemical film deposition. The functional seed layer includes at least one of titanium nitride, titanium oxynitride, a composite structure of titanium oxide and titanium nitride, and a gradient structure of titanium oxide, titanium oxynitride, and titanium nitride. This invention utilizes the characteristic that the titanium oxide precursor layer is easily formed on the glass surface by chemical methods, and then uses nitrogen conversion to give it an interface function more suitable for subsequent copper metallization. This allows the functional layer to simultaneously perform functions such as glass adhesion, process stability, subsequent copper deposition support, and improved interface reliability.

Description

Technical Field

[0001] This invention relates to the fields of wet metallization of glass substrates, functional thin films, and electronic packaging technology, and in particular to a glass substrate metallization structure and metallization method. Background Technology

[0002] Glass substrates, due to their high flatness, low dielectric loss, good dimensional stability, and suitability for high-frequency and high-speed interconnects, have significant application value in advanced packaging, glass-through-hole interconnects, fine circuitry, and high-density substrates. To form reliable conductive lines on the glass surface, an intermediate layer or seed layer is typically constructed between the glass and the copper layer, followed by the formation of the target copper layer using wet metallization processes such as electroless copper plating or electroplating.

[0003] However, the glass surface itself is chemically inert, and direct bonding with copper layers can easily lead to problems such as insufficient adhesion, discontinuous plating initiation, poor interface stability, and subsequent copper layer peeling. While traditional physical vapor deposition (PVD) interlayers can form initial metal or ceramic films, their equipment cost, complex structural coverage, and integration with wet copper deposition processes still present limitations. Although some metal oxide or conductive oxide interlayers can be formed chemically, their stability in subsequent activation solutions, electroless copper solutions, pickling solutions, or electroplating environments still needs further improvement.

[0004] Therefore, existing technologies for intermediate layers in wet metallization of glass substrates typically have the following shortcomings: The bonding ability between the intermediate layer and the glass is limited, making it difficult to maintain a stable interface over a long period of time. The nucleation, coverage, and bonding properties of the intermediate layer with subsequent electroless or electroplated copper are unstable; Some oxide intermediate layers are easily eroded in acidic, alkaline, or complex systems, affecting the reliability of subsequent processes; The pure physical deposition route is not entirely consistent with the chemical intermediate layer approach that this invention focuses on, and there is still room for improvement in the process adaptability to complex glass structures. Obtaining titanium nitride-based functional layers directly through aqueous solutions is quite challenging, requiring new material conversion pathways to balance chemical film formation and functional properties. Summary of the Invention

[0005] Therefore, the present invention provides a glass substrate metallization structure and metallization method. A titanium oxide precursor layer is first formed on the glass substrate by chemical methods, and then further transformed into a functional seed layer material with good stability, conductivity or copper deposition capability. Taking advantage of the fact that the titanium oxide precursor layer is easy to form on the glass surface by chemical methods, it is then transformed with nitrogen to make it more suitable for subsequent copper metallization interface functions. This allows the functional layer to simultaneously undertake the functions of glass adhesion, process stability, subsequent copper deposition adhesion, and improved interface reliability.

[0006] To solve the above-mentioned technical problems, the present invention provides a glass substrate metallization structure, comprising: Glass substrate; A functional seed layer is disposed on the surface of the glass substrate; A copper metallization layer is disposed on the side of the functional seed layer opposite to the glass substrate; The functional seed layer is obtained by nitrogen conversion treatment of a titanium oxide precursor layer. The titanium oxide precursor layer is a precursor layer formed on the surface of the glass substrate by chemical film formation. The functional seed layer includes at least one of titanium nitride, titanium oxynitride, composite structure of titanium oxide and titanium nitride, and gradient structure of titanium oxide, titanium oxynitride and titanium nitride. The functional seed layer is used to improve the bonding ability with the glass substrate, improve the stability of wet chemical solution and support the deposition of copper metallization layer.

[0007] In one embodiment of the present invention, the functional seed layer has a compositional gradient along the direction from the glass substrate to the copper metallization layer, the side of the functional seed layer near the glass substrate is a titanium oxide enrichment region, and the side of the functional seed layer near the copper metallization layer is a titanium nitride enrichment region or a titanium oxynitride enrichment region.

[0008] In one embodiment of the present invention, the functional seed layer further includes a titanium oxide nitride transition region located between the titanium oxide-rich region and the titanium nitride-rich region, so as to improve the bonding ability with the glass substrate through the titanium oxide-rich region, buffer the interface composition and stress difference through the titanium oxide nitride transition region, and improve the conductivity, chemical resistance stability and copper layer bearing capacity through the titanium oxide-rich region or the titanium oxide nitride-rich region.

[0009] In one embodiment of the present invention, the functional seed layer includes TiN and TiO. x N y TiO2 / TiN composite layer, TiO2 / TiO x N y At least one of the / TiN gradient layers.

[0010] In one embodiment of the present invention, the copper metallization layer includes at least one of an electroless copper layer, a copper seed layer, and an electroplated copper layer.

[0011] In one embodiment of the present invention, the copper metallization layer includes an electroless copper layer and an electroplated copper layer sequentially disposed on the functional seed layer; or, the copper metallization layer includes a copper seed layer and an electroplated copper layer sequentially disposed on the functional seed layer.

[0012] In one embodiment of the present invention, the glass substrate is one of alkali-free glass, borosilicate glass, quartz glass, tempered glass, and TGV glass; the glass substrate is one of planar glass substrate, glass through-hole substrate, glass substrate with micropores, glass substrate with trenches, and patterned glass substrate; the functional seed layer is disposed on the corresponding planar surface, through-hole inner wall, micropore inner wall, and trench inner wall of the glass substrate.

[0013] The present invention also provides a method for metallizing a glass substrate, comprising: A glass substrate is provided; the glass substrate is subjected to surface pretreatment, the surface pretreatment including at least one of cleaning treatment, activation treatment, hydroxylation treatment, and surface energy conditioning treatment, so as to improve the adhesion of the titanium oxide precursor layer to the surface of the glass substrate. A titanium oxide precursor layer is formed on the surface of the glass substrate using a chemical deposition method; the chemical deposition method includes at least one of the following: sol-gel method, dip coating method, spin coating method, spray coating method, chemical bath deposition method, and solution deposition method; the titanium oxide precursor layer includes TiO2 and TiO2. x At least one of them; The titanium oxide precursor layer is subjected to at least one of the following treatments: drying, pre-stabilization, and curing, to enhance its adhesion to the glass substrate surface. The titanium oxide precursor layer is subjected to nitrogen-containing conversion treatment to transform the titanium oxide precursor layer into a functional seed layer. The functional seed layer includes at least one of titanium nitride, titanium oxynitride, a composite structure of titanium oxide and titanium nitride, and a gradient structure of titanium oxide, titanium oxynitride and titanium nitride. The functional seed layer is subjected to at least one of surface activation treatment, catalytic treatment, and reduction treatment, and a copper metallization layer is formed on the functional seed layer.

[0014] In one embodiment of the present invention, the nitrogen-containing conversion treatment includes at least one of heat treatment, plasma-assisted nitriding, low-pressure nitriding, and atmospheric pressure nitriding.

[0015] In one embodiment of the present invention, a copper metallization layer is formed on the functional seed layer, comprising: A copper metallization layer is formed by at least one of the following methods: electroless copper deposition, electroplated copper deposition, copper seed layer deposition followed by electroplated copper thickening, and electroless copper deposition followed by electroplated copper thickening.

[0016] The technical solution of the present invention has the following advantages compared with the prior art: The present invention discloses a glass substrate metallization structure and method, which involves chemically forming a titanium oxide precursor layer on the surface of a glass substrate, followed by nitrogen-atmosphere conversion of the precursor layer to at least partially transform it into a titanium nitride, titanium oxynitride, or a composite functional layer of both. Subsequently, an electroless copper layer, a copper seed layer, and / or an electroplated copper layer are formed on this functional seed layer to obtain a copper metallization structure for the glass substrate.

[0017] This invention includes a glass substrate, a functional seed layer disposed on the surface of the glass substrate, and a copper metallization layer disposed on the side of the functional seed layer facing away from the glass substrate. The functional seed layer is not formed directly by physical sputtering, but rather utilizes the characteristic that a titanium oxide precursor layer can be easily formed on the glass surface using chemical methods. First, a titanium oxide precursor layer is formed on the surface of the glass substrate using a chemical film deposition method. Then, the titanium oxide precursor layer undergoes a nitrogen-containing conversion treatment, at least partially transforming it into a titanium nitride, titanium oxynitride, a composite structure of titanium oxide and titanium nitride, or a gradient structure of titanium oxide, titanium oxynitride, and titanium nitride. Through the above structure, the functional seed layer can simultaneously undertake multiple interface functions: on the one hand, the side close to the glass substrate can utilize the compatibility between titanium oxide and the glass surface to improve the adhesion foundation of the functional seed layer on the glass substrate; on the other hand, the titanium oxynitride or titanium nitride-containing regions can improve the stability of the functional seed layer in subsequent wet process solutions and improve the ability to accept electroless copper layers, copper seed layers or electroplated copper layers, thereby improving the deposition continuity and interface reliability of the copper metallization layer.

[0018] This invention addresses issues such as insufficient interlayer adhesion, inadequate chemical resistance, and uneven electroless copper plating in wet metallization of glass substrates. It provides a novel chemical-based functional seed layer solution for copper circuits, TGV interconnects, and advanced packaging metallization structures on glass substrates. Furthermore, compared to existing Ti / Cu seed layers obtained through physical sputtering, this invention first forms a titanium oxide precursor layer on the glass substrate surface using chemical deposition, followed by nitrogen conversion to form a functional seed layer capable of supporting copper deposition. This seed layer can then be further processed using wet metallization processes such as electroless copper plating and electroplating to form a copper metallization layer. The combined approach of chemical deposition, nitrogen conversion, and subsequent wet copper deposition reduces reliance on physical sputtering equipment and lowers production costs. Attached Figure Description

[0019] To make the content of this invention easier to understand, the invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0020] Figure 1 This is a schematic diagram of the glass substrate metallization structure according to an embodiment of the present invention.

[0021] Figure 2 This is a schematic diagram illustrating the principle of the transformation from a titanium oxide precursor layer to a titanium nitride / titanium oxynitride functional seed layer according to an embodiment of the present invention.

[0022] Figure 3 This is a flowchart of a glass substrate metallization method according to an embodiment of the present invention.

[0023] Explanation of reference numerals in the instruction manual: 100. Glass substrate; 200. Functional seed layer; 300, Copper metallization layer; 301, Electroless copper layer; 302, Copper seed layer; 303, Electroplated copper layer. Detailed Implementation

[0024] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can better understand and implement the present invention. However, the embodiments described are not intended to limit the present invention.

[0025] In this invention, when directions (up, down, left, right, front, and back) are described, it is only for the convenience of describing the technical solution of this invention, and does not indicate or imply that the technical features referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this invention.

[0026] In this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," "exceeding," etc., are understood to exclude the stated number; "above," "below," "within," etc., are understood to include the stated number. In the description of this invention, the terms "first" and "second" are used only to distinguish technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0027] In this invention, unless otherwise explicitly defined, the terms "setting," "installing," and "connecting" should be interpreted broadly. For example, they can refer to a direct connection or an indirect connection through an intermediate medium; a fixed connection, a detachable connection, or an integrally formed connection; a mechanical connection, an electrical connection, or a connection capable of mutual communication; or the internal connection of two components or the interaction between two components. Those skilled in the art can reasonably determine the specific meaning of the above terms in this invention based on the specific content of the technical solution.

[0028] Example 1 Reference Figure 1 , Figure 2 As shown, this embodiment provides a metallized structure for a glass substrate 100, including: Glass substrate 100; A functional seed layer 200 is disposed on the surface of the glass substrate 100; A copper metallization layer 300 is disposed on the side of the functional seed layer 200 opposite to the glass substrate 100; The functional seed layer 200 is obtained by nitrogen conversion treatment of a titanium oxide precursor layer. The titanium oxide precursor layer is a precursor layer formed on the surface of the glass substrate 100 by chemical film formation. The functional seed layer 200 includes at least one of titanium nitride, titanium oxynitride, composite structure of titanium oxide and titanium nitride, and gradient structure of titanium oxide, titanium oxynitride and titanium nitride. The functional seed layer 200 is used to improve the bonding ability with the glass substrate 100, improve the stability of wet chemical solution and support the deposition of the copper metallization layer 300.

[0029] Specifically, after nitrogen-containing conversion treatment, the titanium oxide precursor layer is transformed into a functional seed layer 200 with a compositional gradient. This functional seed layer 200, along the direction from the glass substrate 100 to the copper metallization layer 300, can sequentially include a titanium oxide-rich region, a titanium oxynitride transition region, and a titanium nitride-rich region. The titanium oxide-rich region is close to the glass substrate 100, and its function is to enhance the interfacial bonding between the functional seed layer 200 and the glass substrate 100. The titanium oxynitride transition region is located between the titanium oxide-rich region and the titanium nitride-rich region, and its main function is to buffer the compositional and stress differences between the oxide and nitride phases. The titanium nitride-rich region is close to the copper metallization layer 300, and its main function is to improve the conductivity, chemical resistance stability, and adhesion to subsequent copper layer deposition of the functional seed layer 200.

[0030] Specifically, the functional seed layer 200 includes TiN and TiO. x N y TiO2 / TiN composite layer, TiO2 / TiO x N y At least one of the / TiN gradient layers.

[0031] Specifically, the copper metallization layer 300 can be an electroless copper layer 301, a copper seed layer 302, or an electroplated copper layer 303.

[0032] In a preferred embodiment, the copper metallization layer 300 includes an electroless copper layer 301 and an electroplated copper layer 303 sequentially disposed on the functional seed layer 200. The electroless copper layer 301 is used to form a continuous initial copper layer on the surface of the functional seed layer 200, and the electroplated copper layer 303 is used to further thicken the layer to meet the electrical performance requirements of conductive lines, interconnect structures, or packaging substrates.

[0033] In one embodiment, an activation layer, a catalytic layer, a reduction layer, a copper seed layer 302, or other auxiliary layers may be provided between the functional seed layer 200 and the copper metallization layer 300.

[0034] Specifically, the glass substrate 100 is one of alkali-free glass, borosilicate glass, quartz glass, tempered glass, and TGV glass; the glass substrate 100 is one of planar glass substrate, glass through-hole substrate, glass substrate with micropores, glass substrate with trenches, and patterned glass substrate; the functional seed layer 200 is disposed on the corresponding planar surface, through-hole inner wall, micropore inner wall, and trench inner wall of the glass substrate 100.

[0035] Specifically, the functional seed layer 200 is obtained by nitrogen-containing conversion treatment of a titanium oxide precursor layer. Specifically, the titanium oxide precursor layer can be a TiO2 layer or a TiO2 layer. x The precursor layer is formed on the surface of the glass substrate 100 by a sol-gel method, dip coating, spin coating, spray coating, chemical bath deposition, or solution deposition. Since the precursor layer is formed by a chemical film formation method, it can better cover the surface of the glass substrate 100 and improve the initial bonding ability with the glass substrate 100.

[0036] With the above structure, the functional seed layer 200 serves as a multifunctional interface layer between the glass substrate 100 and the copper metallization layer 300. This functional seed layer 200 can simultaneously ensure the bonding ability of the glass substrate 100, improve the stability of the wet plating solution, and support the deposition of the copper metallization layer 300. This helps to improve problems such as discontinuous plating initiation, insufficient interfacial bonding, and copper layer peeling that are prone to occur when directly plating copper onto the glass substrate 100 in the traditional way.

[0037] Example 2 Reference Figure 3 As shown, this embodiment provides a method for metallizing a glass substrate 100, used to prepare the metallized structure of the glass substrate 100 described in Embodiment 1. It includes the following steps: Step S1: Provide a glass substrate 100. The glass substrate 100 can be alkali-free glass, borosilicate glass, quartz glass, tempered glass, or TGV glass. Perform surface pretreatment on the glass substrate 100. The surface pretreatment may include at least one of cleaning treatment, activation treatment, hydroxylation treatment, or surface energy conditioning treatment. Cleaning treatment is used to remove organic contaminants, particulate contaminants, and ionic contaminants from the surface of the glass substrate 100; activation treatment or hydroxylation treatment is used to increase the number of hydroxyl groups and surface activity on the glass surface; surface energy conditioning treatment is used to improve the spreadability and wettability of the subsequent titanium-containing precursor solution on the glass surface.

[0038] Step S2: A titanium oxide precursor layer is formed on the surface of the glass substrate 100 using a chemical film-forming method. The sol-gel method can be used to form the titanium oxide precursor layer. Specifically, a titanium-containing precursor, solvent, hydrolysis modifier, and stabilizer are mixed to form a titanium-containing sol, which is then coated onto the surface of the glass substrate 100 by dip coating, spin coating, or spray coating. After the titanium-containing precursor undergoes hydrolysis and condensation reactions on the surface of the glass substrate 100, a titanium oxide precursor layer is formed. This titanium oxide precursor layer may include TiO2, TiO2, etc. x Or a structural layer in which both exist; Step S3 involves drying, pre-stabilizing, or curing the titanium oxide precursor layer. Drying removes solvent from the precursor layer; pre-stabilizing promotes the formation of the titanium oxide network structure; and curing improves the density of the titanium oxide precursor layer and its adhesion to the glass substrate 100 surface. This step reduces the risk of cracking, peeling, or localized detachment of the precursor layer during subsequent nitrogen-containing conversion. Furthermore, auxiliary components that promote copper nucleation, improve adhesion, or enhance stability can be introduced into the titanium oxide precursor layer.

[0039] Step S4: Perform nitrogen-containing conversion treatment on the titanium oxide precursor layer. The nitrogen-containing conversion treatment can be at least one of heat treatment, plasma-assisted nitriding, low-pressure nitriding, and atmospheric pressure nitriding. By controlling the temperature, time, pressure, gas flow rate, and heating method of the nitrogen-containing conversion treatment, the titanium oxide precursor layer can undergo different degrees of nitriding or oxynitriding conversion.

[0040] For example, the nitrogen-containing conversion treatment causes the side of the titanium oxide precursor layer closest to the glass substrate 100 to retain more TiO2 or TiO2. x The structure has TiO2 forming in the middle region. x N y The structure forms a TiN enrichment structure on the side near the outer surface, thus obtaining TiO2 / TiO2. x N y / TiN gradient functional seed layer 200. In this gradient functional seed layer 200, TiO2 or TiO2... x The region is used to enhance the bonding ability with the glass substrate 100, TiO2 x N y The region is used to achieve the transition between the oxide phase and the nitride phase, and the TiN-enriched region is used to improve conductivity, chemical resistance, and copper layer adhesion. The functional seed layer 200 can be a single layer, multilayer, gradient layer, porous layer, dense layer, or locally patterned layer.

[0041] Step S5: Perform surface activation, catalytic treatment, or reduction treatment on the functional seed layer 200, and form a copper metallization layer 300 on the functional seed layer 200. The copper metallization layer 300 can be formed by electroless copper deposition, or by electroplating copper to thicken the copper seed layer 302 after deposition, or by electroplating copper to thicken the copper metallization layer after electroless copper deposition. Preferably, electroless copper deposition is first performed on the surface of the functional seed layer 200 to form a continuous initial copper layer, and then electroplating copper is performed to thicken the layer, so as to obtain a copper metallization layer 300 with a thickness that meets the requirements of the circuit or interconnect.

[0042] The above method utilizes the compatibility between the titanium oxide precursor layer and the surface of the glass substrate 100 to improve the initial film formation and adhesion of the intermediate layer on the glass substrate 100; through nitrogen conversion, the titanium oxide precursor layer is transformed into a functional seed layer 200 containing titanium nitride or oxynitride, thereby improving the chemical resistance stability, conductivity, or interfacial adhesion of the functional layer; it improves the nucleation continuity and interfacial bonding of subsequent electroless copper or electroplated copper on the glass substrate 100, and inhibits interfacial reactions and diffusion; it avoids relying solely on physical deposition processes to form the intermediate layer, providing a material route closer to the chemical seed layer concept; and it provides a scalable wet metallization solution for planar glass substrates 100, through-hole glass substrates 100, or patterned glass substrates 100.

[0043] Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to examples, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.

Claims

1. A glass substrate metallization structure, characterized in that, include: Glass substrate (100); A functional seed layer (200) is disposed on the surface of the glass substrate (100); A copper metallization layer (300) is disposed on the side of the functional seed layer (200) facing away from the glass substrate (100); The functional seed layer (200) is obtained by nitrogen conversion treatment of a titanium oxide precursor layer. The titanium oxide precursor layer is a precursor layer formed on the surface of the glass substrate (100) by chemical film formation. The functional seed layer (200) includes at least one of titanium nitride, titanium oxynitride, composite structure of titanium oxide and titanium nitride, and gradient structure of titanium oxide, titanium oxynitride and titanium nitride. The functional seed layer (200) is used to improve the bonding ability with the glass substrate (100), improve the stability of wet chemical solution and support the deposition of the copper metallization layer (300).

2. The glass substrate metallization structure according to claim 1, characterized in that, The functional seed layer (200) has a compositional gradient along the direction from the glass substrate (100) to the copper metallization layer (300). The side of the functional seed layer (200) near the glass substrate (100) is a titanium oxide enrichment region, and the side of the functional seed layer (200) near the copper metallization layer (300) is a titanium nitride enrichment region or a titanium oxynitride enrichment region.

3. The glass substrate metallization structure according to claim 2, characterized in that, The functional seed layer (200) also includes a titanium oxide nitride transition region located between the titanium oxide enrichment region and the titanium nitride enrichment region, so as to improve the bonding ability with the glass substrate (100) through the titanium oxide enrichment region, buffer the interface composition and stress difference through the titanium oxide nitride transition region, and improve conductivity, chemical resistance stability and copper layer bearing capacity through the titanium oxide enrichment region or the titanium oxide nitride enrichment region.

4. The glass substrate metallization structure according to claim 1, characterized in that, The functional seed layer (200) includes at least one of TiN, TiO x N y , a composite layer of TiO2 / TiN, a gradient layer of TiO2 / TiO x N y / TiN.

5. The glass substrate metallization structure according to claim 1, characterized in that, The copper metallization layer (300) includes at least one of an electroless copper layer (301), a copper seed layer (302), and an electroplated copper layer (303).

6. The glass substrate metallization structure according to claim 1, characterized in that, The copper metallization layer (300) includes an electroless copper layer (301) and an electroplated copper layer (303) sequentially disposed on the functional seed layer (200); or, the copper metallization layer (300) includes a copper seed layer (302) and an electroplated copper layer (303) sequentially disposed on the functional seed layer (200).

7. The glass substrate metallization structure according to claim 1, characterized in that, The glass substrate (100) is one of alkali-free glass, borosilicate glass, quartz glass, tempered glass, and TGV glass; the glass substrate (100) is one of planar glass substrate, glass through-hole substrate, glass substrate with micropores, glass substrate with trenches, and patterned glass substrate; the functional seed layer (200) is disposed on the corresponding planar surface, through-hole inner wall, micropore inner wall, and trench inner wall of the glass substrate (100).

8. A method for metallizing a glass substrate, characterized in that, include: A glass substrate (100) is provided; the glass substrate (100) is subjected to a surface pretreatment, the surface pretreatment including at least one of cleaning treatment, activation treatment, hydroxylation treatment and surface energy conditioning treatment, to improve the adhesion of the titanium oxide precursor layer to the surface of the glass substrate (100); A titanium oxide precursor layer is formed on the surface of the glass substrate (100) using a chemical film-forming method; the chemical film-forming method includes at least one of sol-gel method, dip coating method, spin coating method, spray coating method, chemical bath deposition method, and solution deposition method; the titanium oxide precursor layer includes TiO2, TiO2, etc. x At least one of them; The titanium oxide precursor layer is subjected to at least one of the following treatments: drying, pre-stabilization, and curing, to enhance its bonding ability with the surface of the glass substrate (100). The titanium oxide precursor layer is subjected to nitrogen-containing conversion treatment to convert the titanium oxide precursor layer into a functional seed layer (200). The functional seed layer (200) includes at least one of titanium nitride, titanium oxynitride, composite structure of titanium oxide and titanium nitride, and gradient structure of titanium oxide, titanium oxynitride and titanium nitride. The functional seed layer (200) is subjected to at least one of surface activation treatment, catalytic treatment, and reduction treatment, and a copper metallization layer (300) is formed on the functional seed layer (200).

9. A method for metallizing a glass substrate according to claim 8, characterized in that, The nitrogen-containing conversion treatment includes at least one of heat treatment, plasma-assisted nitriding, low-pressure nitriding, and atmospheric pressure nitriding.

10. A method for metallizing a glass substrate according to claim 8, characterized in that, A copper metallization layer (300) is formed on the functional seed layer (200), including: A copper metallization layer (300) is formed by at least one of the following methods: electroless copper deposition, electroplated copper deposition, copper seed layer (302) followed by electroplated copper thickening, and electroplated copper thickening followed by electroless copper deposition.

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