A six-surface three-dimensional light storage and computing integrated chip and a storage and computing method thereof

Abstract

This invention discloses a six-sided three-dimensional optical storage and computing integrated chip and its storage and computing method, belonging to the field of chip technology. It includes a three-dimensional storage body formed by stacking and bonding nanocrystalline materials, optoelectronic fusion chips respectively attached to the six outer surfaces of the three-dimensional storage body, a laser writing module, and a laser reading module. The six optoelectronic fusion chips constitute three pairs of face-to-face optoelectronic fusion chips, including an information input optoelectronic fusion chip pair, an information output optoelectronic fusion chip pair, and a resource retrieval and computation optoelectronic fusion chip pair. The laser writing module controls the three pairs of face-to-face optoelectronic fusion chips to emit high-frequency, high-power laser beams, changing the crystal phase of the nanocrystalline materials inside the three-dimensional storage body. The laser reading module controls the three pairs of face-to-face optoelectronic fusion chips to emit low-frequency, low-power laser beams, generating a four-wave mixed signal light. This invention uses the above-mentioned chip and its storage and computing method, utilizing third-order nonlinear optical effects and four-wave mixing to achieve uniqueness determination of information writing and reading.

Description

Technical Field

[0001] This invention relates to the field of chip technology, and in particular to a six-sided three-dimensional optical storage and computing integrated chip and its storage and computing method. Background Technology

[0002] The field of artificial intelligence currently faces three core bottlenecks: First, the von Neumann memory wall: In traditional computer architectures, storage units are separated from computing units, and data needs to be frequently moved between the two, resulting in huge latency and power consumption.

[0003] Second, storage density limits. The storage density of traditional two-dimensional storage (such as NAND and DRAM) is limited by the physical limits of photolithography and cannot be further improved. Although three-dimensional stacking technology has made some breakthroughs, it is still limited by the bandwidth of serial addressing.

[0004] Third, the positioning problem of three-dimensional addressing. In the research of three-dimensional optical storage, a fundamental problem is that there may be multiple crystal phase change points on a laser beam. When the reading laser is blocked by the first point in advance, it is impossible to read the subsequent points, and it is also impossible to determine the specific location where the blockage occurred.

[0005] Although the academic community has studied third-order nonlinear optical effects such as four-wave mixing and three-photon generation, and has confirmed that crystal phase transformation affects third-order nonlinear polarizability and clarified the physical mechanism of four-wave mixing, no one has yet applied the characteristics of four-wave mixing to three-dimensional optical storage addressing to solve the above problems. Summary of the Invention

[0006] The purpose of this invention is to provide a six-sided three-dimensional optical storage and computing integrated chip and its storage and computing method to solve the problems mentioned in the background art.

[0007] To achieve the above objectives, the present invention provides a six-sided three-dimensional optical storage and computing integrated chip, comprising: Three-dimensional storage volume, a square or rectangular body formed by stacking and bonding nanocrystalline materials; Six optoelectronic fusion chips are respectively attached to the six outer surfaces of the three-dimensional storage body, and the six optoelectronic fusion chips form three pairs of opposite optoelectronic fusion chips. The laser writing module is located in the middle of three sets of face-to-face optoelectronic fusion chip pairs. It is used to control the three sets of face-to-face optoelectronic fusion chip pairs to simultaneously emit high-frequency, high-power laser beams when storing information, thereby changing the nanocrystalline phase inside the three-dimensional storage body. The laser reading module is located in the middle of the three sets of face-to-face optoelectronic fusion chip pairs. It is used to control the three sets of face-to-face optoelectronic fusion chip pairs to simultaneously emit low-frequency, low-power laser beams during information reading, thereby exciting the third-order nonlinear polarizability of the altered nanocrystalline phase and generating four-wave mixed signal light. The laser reading module adopts both single-point reading and parallel reading methods. The three sets of opposite-side optoelectronic fusion chip pairs include: The information input optoelectronic fusion chip pair is used to emit a laser beam propagating along the X-axis. and receive read signals; The information output optoelectronic fusion chip pair is used to emit a laser beam propagating along the Y-axis. and receive read signals; The resource-requesting optoelectronic fusion chip pair is used to emit a laser beam propagating along the Z-axis. And receive the read signal.

[0008] Preferably, the nanocrystal material forming the three-dimensional storage body has a crystal phase-dependent third-order nonlinear polarizability, and all nanocrystals have the same crystal phase. Each optoelectronic fusion chip includes a control circuit, a calibration memory, a light-emitting unit, and a receiving unit. The light-emitting unit is a VCSEL laser emitting array used to emit laser beams, and the receiving unit is a high-sensitivity photodetector array used to detect four-wave mixing signals.

[0009] Preferably, the laser writing module alters the crystal phase of the nanocrystals inside the three-dimensional storage unit by: during information storage, controlling the light-emitting units of three sets of face-to-face optoelectronic fusion chip pairs to simultaneously emit high-frequency, high-power laser beams, causing the three laser beams to orthogonally converge at the target microcrystal particle sites within the three-dimensional storage unit. Through the accumulation of energy from high-frequency, high-power lasers, the microcrystalline phase at the target microcrystalline particle sites reaches a threshold, causing a change in the microcrystalline phase. The changed microcrystalline phase exhibits different third-order nonlinear polarizabilities. The frequency range of the high-frequency, high-power laser is [specified range]. Hz, with a power range of 10-100mW.

[0010] Preferably, the laser reading module generates four-wave mixing signal light, specifically including: During information reading, the three sets of opposite-side optoelectronic fusion chips simultaneously emit low-frequency, low-power laser beams to the light-emitting unit, causing the three laser beams to intersect orthogonally at the target microcrystalline particle location. When the crystal phase at the target microcrystalline particle location has changed and all three laser beams can reach the target microcrystalline particle location, the three laser beams generate a four-wave mixing signal light by changing the third-order nonlinear polarizability. Among them, the frequency range of the low-frequency, low-power laser beam is: Hz, power range of 0.1-1mW, signal light intensity meets , express exist The light intensity at that location, express exist The light intensity at that location, express exist The light intensity at that location, express Third-order nonlinear polarizability after microcrystalline phase change; Preferably, when using a parallel reading method, the three sets of opposite-side photoelectric fusion chips are controlled to simultaneously transmit. Groups of low-frequency, low-power laser beams, respectively corresponding to Different target microcrystalline particle sites, producing A four-wave mixed-frequency light signal, information output optoelectronic fusion chip for... The group receiving unit simultaneously The four-wave mixed frequency signal light is read and judged.

[0011] Preferably, the reading and judgment based on the four-wave mixed signal light includes: the information output optoelectronic fusion chip detects the four-wave mixed signal light on the receiving unit; if a strong four-wave mixed signal light is detected, it is determined that the target microcrystalline particle position has stored information; otherwise, it is determined that no information has been stored or the reading is invalid.

[0012] Preferably, it also includes a calibration module, which is connected to three sets of face-to-face photoelectric fusion chips to achieve accurate calibration of the light-emitting unit and the receiving unit of the three sets of face-to-face photoelectric fusion chips. The calibration is completed when the signal continuity detection is achieved between each pair of light-emitting units and the receiving unit.

[0013] Preferably, a cognitive system is provided on the three-dimensional storage body, and the cognitive system includes: The input module, connected to the information input optoelectronic fusion chip, is used to receive multimodal external input information; The memory module includes short-term memory units, long-term memory units, and permanent memory units. The long-term memory units and permanent memory units store input information in the nanocrystalline particles of the three-dimensional storage body through the collaborative writing of three sets of face-to-face optoelectronic fusion chip pairs. The reasoning module is used to perform logical reasoning based on input and stored information. The output module, connected to the information output optoelectronic fusion chip, is used to output the reasoning results; The inner loop module is used to perform frequency statistics, weight calculation and correlation analysis on stored information when the cognitive system is idle, and to extract the strong correlations verified by high frequency into the law of permanent memory.

[0014] Preferably, the formula for calculating the maximum storage density of a three-dimensional storage volume is: ; in, The wavelength of the laser. This indicates the upper limit of storage density.

[0015] This invention discloses a storage and computing method for a six-sided three-dimensional optical storage and computing integrated chip, comprising the following steps: S1. Chip initialization and calibration: The three-dimensional storage body is subjected to crystal phase uniformity processing to ensure that all nanocrystalline phases are in a unified initial state. The calibration module is used to calibrate the three sets of face-to-face photoelectric fusion chip pairs to establish the mapping relationship between the light-emitting unit and the receiving unit. S2. Information Writing: When storing information, the light-emitting units of the three sets of opposite optoelectronic fusion chip pairs are controlled to simultaneously emit high-frequency, high-power laser beams, causing the three laser beams to orthogonally converge at the target microcrystalline particle location within the three-dimensional storage volume. Through the energy accumulation of high-frequency and high-power lasers, the microcrystalline phase at the target microcrystalline particle site reaches the threshold, and the microcrystalline phase changes. The changed microcrystalline phase has different third-order nonlinear polarizabilities. S3. Information Reading: When reading information, the light-emitting units of the three sets of opposite optoelectronic fusion chip pairs simultaneously emit three low-frequency, low-power laser beams, so that the three laser beams are focused on the target microcrystalline particle location. Orthogonal intersecting, exciting the third-order nonlinear polarizability of the altered nanocrystalline phase, generating detection four-wave mixing signal light, and the information output optoelectronic fusion chip detects the four-wave mixing signal light by the receiving unit and reads and judges it; S4. Parallel information reading: During parallel reading, control the three sets of opposite-side optoelectronic fusion chips to simultaneously transmit. Groups of low-frequency, low-power laser beams, respectively corresponding to Different target microcrystalline particle sites, producing A four-wave mixed-frequency light signal, information output optoelectronic fusion chip for... The group receiving unit simultaneously The four-wave mixed frequency signal light is read and judged.

[0016] Therefore, the present invention employs the above-described six-sided three-dimensional optical storage and computing integrated chip and its storage and computing method, which has the following beneficial effects: (1) When three laser beams are present at the target point, the four-wave mixing signal generated can still be generated even if the laser is blocked in advance, as long as the blocking occurs after the target point, thus solving the problem of being unable to read due to the blocking in advance. (2) By using parallel read and write, the bandwidth limitation of serial read and write is overcome; (3) Achieve unique identification: The four-wave mixing signal requires that the three laser beams intersect at the same spatial point and that the crystal phase at that point changes, so as to achieve the unique determination of the three-dimensional spatial point position; (4) Physical separation of read and write: high frequency and high power are used for writing, and low frequency and low power are used for reading to ensure non-destructive reading; (5) In-memory computing: Six-sided chip functional partitioning, physical integration of storage and computing, eliminating the von Neumann bottleneck; (6) Breakthrough in storage density limits: theoretical density reaches It is more than 10,000 times better than two-dimensional storage.

[0017] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of a six-sided three-dimensional optical storage and computing integrated chip structure according to an embodiment of the present invention; Figure 2 This is a schematic diagram illustrating the generation of a four-wave mixing signal from the orthogonal intersection of three laser beams according to an embodiment of the present invention. Figure 3 This is a schematic diagram of the automatic early blocking and exclusion mechanism according to an embodiment of the present invention; Figure 4 This is a schematic diagram of laser parameters during the information writing process according to an embodiment of the present invention; Figure 5 This is a schematic diagram of laser parameters for the information reading process in an embodiment of the present invention; Figure 6 This is a graph showing the relationship between the intensity of the four-wave mixing signal and the intensity of the three laser beams in an embodiment of the present invention. Figure 7 This is a schematic diagram of the parallel reading mechanism according to an embodiment of the present invention; Figure 8 This is a deployment diagram of the cognitive system according to an embodiment of the present invention; Figure 9 This is a schematic diagram illustrating the uniqueness determination under multi-point interference in an embodiment of the present invention; Figure Labels 1. Three-dimensional storage; 2. Optoelectronic fusion chip for resource retrieval and computation; 3. Optoelectronic fusion chip for information input; 4. Optoelectronic fusion chip for information output. Detailed Implementation

[0019] The technical solution of the present invention will be further described below with reference to the accompanying drawings and embodiments.

[0020] Unless otherwise defined, the technical or scientific terms used in this invention shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "comprising" or "including," and similar terms used in this invention, mean that the element or object preceding the term encompasses the elements or objects listed following the term and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0021] Example 1 like Figure 1 As shown, the present invention provides a six-sided three-dimensional optical storage and computing integrated chip, comprising: The three-dimensional storage body 1 is a square or rectangular body formed by stacking and bonding nanocrystalline materials with a light-transmitting adhesive. The nanocrystalline materials have a crystal phase-dependent third-order nonlinear polarizability and are treated with a special process to make all nanocrystalline phases consistent. The special process includes one or more combinations of annealing, laser pre-irradiation, or electric field-induced treatment.

[0022] Six optoelectronic fusion chips are respectively attached to the six outer surfaces of the three-dimensional storage body 1, and the six optoelectronic fusion chips form three pairs of opposite optoelectronic fusion chips.

[0023] The laser writing module is located in the middle of the three sets of face-to-face photoelectric fusion chip pairs. It is used to control the three sets of face-to-face photoelectric fusion chip pairs to simultaneously emit high-frequency, high-power laser beams when storing information, thereby changing the nanocrystalline phase inside the three-dimensional storage body 1.

[0024] The laser reading module is located in the middle of the three sets of face-to-face optoelectronic fusion chip pairs. When reading information, it controls the three sets of face-to-face optoelectronic fusion chip pairs to simultaneously emit low-frequency, low-power laser beams to excite the third-order nonlinear polarizability of the altered nanocrystalline phase and generate four-wave mixed signal light. The laser reading module adopts single-point reading mode and parallel reading mode.

[0025] The three sets of opposite-side optoelectronic fusion chip pairs include: The information input optoelectronic fusion chip pair (left and right information input optoelectronic fusion chip 3) is used to emit a laser beam propagating along the X-axis. Receive and read signals; The information output optoelectronic fusion chip pair (front and rear information output optoelectronic fusion chip 4) is used to emit a laser beam propagating along the Y-axis. It receives and reads signals, and makes judgments based on the four-wave mixed signal light. The resource retrieval operation optoelectronic fusion chip pair (upper and lower resource retrieval operation optoelectronic fusion chip 2) is used to emit a laser beam propagating along the Z-axis. Receive and read signals.

[0026] Each optoelectronic fusion chip includes a control circuit, a calibration memory, a light-emitting unit, and a receiving unit. The light-emitting unit is a VCSEL laser emitting array used to emit laser beams, and the receiving unit is a high-sensitivity photodetector array used to detect four-wave mixing signals.

[0027] In this embodiment, the laser writing module changes the internal nanocrystalline phase of the three-dimensional storage 1, specifically including: as follows Figure 4 As shown, during information storage, the light-emitting units of the three sets of opposite optoelectronic fusion chip pairs are controlled to simultaneously emit high-frequency, high-power laser beams, causing the three laser beams to orthogonally converge at the target microcrystalline particle location within the three-dimensional storage volume 1. Through the accumulation of energy from high-frequency, high-power lasers, the microcrystalline phase at the target microcrystalline particle sites reaches a threshold, causing a change in the microcrystalline phase. The changed microcrystalline phase exhibits different third-order nonlinear polarizabilities. The frequency range of the high-frequency, high-power laser is [specified range]. Hz, with a power range of 10-100mW, causes a change in crystal phase.

[0028] The three laser beams are: :parameter The optical path is ; :parameter The optical path is ; :parameter The optical path is .

[0029] In this embodiment, the principle of generating four-wave mixing signal light includes: like Figure 2 As shown, when the frequencies of the three beams are respectively When lasers intersect orthogonally at the same point in a nonlinear medium, the third-order nonlinear polarizability is altered by changes in the microcrystalline phase. The effect of this will produce a fourth beam with a frequency of The signal light, the formula is: ; in, It is a third-order nonlinear polarization intensity. Let be the electric field intensity of the three incident laser beams.

[0030] The intensity of the four-wave mixing signal light is: ; in, This is a coefficient related to the length of the medium, wavelength, etc.

[0031] The four-wave mixing process needs to meet the phase matching condition: ; In an orthogonal geometric configuration, the wave vectors of the three laser beams are perpendicular to each other. The phase matching condition can only be satisfied when the three laser beams intersect precisely orthogonally at the same point. Any deviation will lead to phase mismatch, and the four-wave mixing efficiency will drop sharply.

[0032] The laser readout module generates a four-wave mixed signal light, specifically including: like Figure 5 As shown, during information reading, the three sets of opposite-side optoelectronic fusion chips simultaneously emit low-frequency, low-power laser beams to the light-emitting unit, causing the three laser beams to intersect orthogonally at the target microcrystalline particle location. When the crystal phase at the target microcrystalline particle location has changed and all three laser beams can reach the target microcrystalline particle location, the three laser beams generate a four-wave mixing signal light by changing the third-order nonlinear polarizability. Among them, the frequency range of the low-frequency, low-power laser beam is: Hz, power range of 0.1-1mW, generating four-wave mixing signals without causing crystal phase change, and the signal light intensity meets the requirements. , express exist The light intensity at that location, express exist The light intensity at that location, express exist The light intensity at that location, express The third-order nonlinear polarizability after the microcrystalline phase is changed.

[0033] like Figure 6 As shown, when multiple microcrystalline phase change sites exist within the three-dimensional storage volume 1 At this time, the four-wave mixing signal light energy automatically eliminates interference from premature blocking: if any low-frequency, low-power laser beam is blocked by other crystal phase-changing points before reaching the target microcrystalline particle, the light intensity of that laser beam at the target microcrystalline particle will be zero, resulting in... The four-wave mixing signal light could not be generated. Therefore, the existence of the four-wave mixing signal light itself proves that none of the three laser beams were blocked in advance, and that the crystal phase at the target point has changed, achieving the unique determination of the point in three-dimensional space, such as... Figure 3 As shown.

[0034] The relationship between the four-wave mixing signal and early blocking is as follows: For the target location Four-wave mixed signal light can be detected when: 1. The crystalline phase has changed; 2. In There are no crystal phase change sites in the optical path. satisfy ; 3. In There are no crystal phase change sites in the optical path. satisfy ; 4. In There are no crystal phase change sites in the optical path. satisfy , for Phase change points along the optical path of Axis coordinates For target location of Axis coordinates; for Phase change points along the optical path of y Axis coordinates For target location of y Axis coordinates; for Phase change points along the optical path z-axis coordinate, For target location The z-axis coordinate.

[0035] If it exists satisfy ,but exist The area was blocked. Therefore If it exists satisfy ,but exist The area was blocked. Therefore If it exists satisfy ,but exist The area was blocked. Therefore .

[0036] like If the crystal phase remains unchanged, then Typically much smaller , Very small or none.

[0037] We get the following only when all four conditions are met: and ,at this time .

[0038] In this embodiment, the reading judgment based on the four-wave mixed signal light includes: the information output optoelectronic fusion chip detects the four-wave mixed signal light by the receiving unit; if a strong four-wave mixed signal light is detected, it is determined that the target microcrystalline particle position has stored information; otherwise, it is determined that no information is stored or the reading is invalid. The judgment logic is shown in Table 1. Table 1 Read Judgment Logic

[0039] In this embodiment, as Figure 7 As shown, in parallel reading mode, the three sets of opposite-side optoelectronic fusion chips are controlled to simultaneously transmit. Groups of low-frequency, low-power laser beams, respectively corresponding to Different target microcrystalline particle sites, producing A four-wave mixed-frequency light signal, information output optoelectronic fusion chip for... The group receiving unit simultaneously The four-wave mixed frequency signal light is read and judged.

[0040] In this embodiment, the six-sided three-dimensional optical storage and computing integrated chip also includes a calibration module. The calibration module is connected to three sets of face-to-face optoelectronic fusion chips to achieve precise calibration of the light-emitting and receiving units of the three sets of face-to-face optoelectronic fusion chips. Calibration is complete when signal continuity is detected between any two pairs of light-emitting and receiving units. The calibration process includes: Each light-emitting unit is activated sequentially to emit a calibration laser; All receiving units on the opposite side are detected simultaneously, and the actual received unit positions are recorded; Establish a mapping table between theoretical coordinates and actual light-emitting units; The mapping table is stored in the chip's calibration memory.

[0041] In this embodiment, a cognitive system is provided on the three-dimensional storage body 1, such as... Figure 8 As shown, the cognitive system includes: The input module, connected to the information input optoelectronic fusion chip, is used to receive multimodal external input information; The memory module includes a short-term memory unit, a long-term memory unit, and a permanent memory unit. The long-term memory unit and the permanent memory unit store the input information in the nanocrystalline particles of the three-dimensional storage body 1 through the collaborative writing of three sets of face-to-face optoelectronic fusion chip pairs. The reasoning module is connected to the resource call operation optoelectronic fusion chip and is used to perform logical reasoning based on input information and stored information. The output module, connected to the information output optoelectronic fusion chip, is used to output the reasoning results; The inner loop module is used to perform frequency statistics, weight calculation and correlation analysis on stored information when the cognitive system is idle, and to extract the strong correlations verified by high frequency into the law of permanent memory.

[0042] In this embodiment, the resolution of the optoelectronic fusion chip is set to: X-side chip (left and right information input optoelectronic fusion chip 3): One light-emitting unit; Y-side chip (front and rear information output optoelectronic fusion chip 4): One light-emitting unit; Z-side chip (top and bottom resource retrieval operation optoelectronic fusion chip 2): One light-emitting unit; The total number of storage points is: ; When the density of light-emitting units reaches the optical diffraction limit ,in, is the laser wavelength.

[0043] Theoretical maximum information density: ; For visible light ( ): ; Compared to two-dimensional storage, two-dimensional storage density is: 3D orthogonal storage density: Increase multiplier: ,for This represents an increase of 16,000 times.

[0044] Example 2 This invention discloses a storage and computing method for a six-sided three-dimensional optical storage and computing integrated chip, comprising the following steps: S1. Chip initialization and calibration: Perform crystal phase uniformity processing on the three-dimensional storage body 1 to make all nanocrystalline phases in a unified initial state. Calibrate the three sets of face-to-face photoelectric fusion chip pairs through the calibration module to establish the mapping relationship between the light-emitting unit and the receiving unit. S2. Information writing: When storing information, the light-emitting units of the three sets of opposite optoelectronic fusion chip pairs are controlled to simultaneously emit high-frequency, high-power laser beams, so that the three laser beams orthogonally converge at the target microcrystalline particle position inside the three-dimensional storage body 1. Through the energy accumulation of high-frequency and high-power lasers, the microcrystalline phase at the target microcrystalline particle site reaches the threshold, and the microcrystalline phase changes. The changed microcrystalline phase has different third-order nonlinear polarizabilities. S3. Single-point information reading: When reading information, the light-emitting units of the three sets of opposite optoelectronic fusion chip pairs are controlled to simultaneously emit three low-frequency, low-power laser beams, so that the three laser beams are focused on the target microcrystalline particle location. Orthogonal intersecting, exciting the third-order nonlinear polarizability of the altered nanocrystalline phase, generating detection four-wave mixing signal light, and the information output optoelectronic fusion chip detects the four-wave mixing signal light by the receiving unit and reads and judges it; S4. Parallel information reading: During parallel reading, control the three sets of opposite-side optoelectronic fusion chips to simultaneously transmit. Groups of low-frequency, low-power laser beams, respectively corresponding to Different target microcrystalline particle sites, producing A four-wave mixed-frequency light signal, information output optoelectronic fusion chip for... The group receiving unit simultaneously The four-wave mixed frequency signal light is read and judged.

[0045] Example 3 Chip fabrication and calibration: Ge2Sb2Te5 (GST) nanocrystals with a particle size of 5-50 nm were selected and mixed with a light-transmitting binder, then stacked layer by layer to form a 10mm×10mm×10mm cubic three-dimensional memory, for a total of 1000 layers. GST material has significantly different third-order nonlinear polarizability values ​​in crystalline and amorphous states. After annealing at 150℃ for 2 hours, all microcrystals were made to have the same crystal phase (initially assumed to be crystalline).

[0046] Six 10mm × 10mm optoelectronic fusion chips were fabricated, each integrating a 1024 × 1024 VCSEL laser emitting array (wavelength adjustable: 650nm for writing, 1550nm for reading) and a corresponding PIN photodetector array (for detecting four-wave mixing signals). The six chips were attached to the six sides of a three-dimensional memory module and fixed with optical adhesive.

[0047] Each light-emitting unit is activated sequentially, the actual position of the receiving unit is recorded, and a 1024×1024×1024 three-dimensional mapping table is established.

[0048] Information writing: Target microcrystalline particle locations: (256, 512, 768); Write parameters: Laser wavelength: 650nm (red light, frequency) Hz); Laser power: 50mW; Pulse width: 100ns; During information storage, the information input to the optoelectronic fusion chip activates unit X=256 and emits... ; The information output optoelectronic fusion chip activates the Y=512 unit and emits. The resource allocation operation of the optoelectronic fusion chip activates the Z=768 unit and emits. Three laser beams intersect orthogonally at (256, 512, 768); the superposition of energy reaches the threshold, and the GST crystal phase changes from a crystalline state to an amorphous state; after the crystal phase change, the energy at this point... from Become Information storage complete.

[0049] Information reading (without prior blocking): The target microcrystalline particle location (256,512,768) is assumed to have been written and that there are no other locations closer to the light source in its optical path.

[0050] Read parameters: Laser wavelength: 1550nm (infrared, frequency) Hz); Laser power: 0.5mW; Continuous wave; Three sets of face-to-face optoelectronic fusion chips are controlled to simultaneously emit three laser beams with parameters corresponding to (256, 512, 768). The three laser beams intersect orthogonally at (256, 512, 768); since the crystal phase at this point has changed (amorphous state). The signal is relatively large, meeting the phase matching condition, generating a four-wave mixed signal light. The photoelectric fusion chip detects the four-wave mixed signal on the photodetector, and the system determines that there is a signal and that there is information at this point, outputting "1".

[0051] Information reading (with cases of advance blocking), such as Figure 9 As shown: Suppose that the memory contains: Written (located in) On the optical path, ) Target microcrystalline particle sites, ; Control three sets of face-to-face optoelectronic fusion chips to simultaneously emit three beams of excitation, with corresponding parameters (256,512,768); Laser propagation, in Encounter Blocked, unable to reach ; and Laser flow is unobstructed and reaches its destination. ;exist Due to The product of the three laser beams is zero, and no four-wave mixing signal is generated; The photodetector of the optoelectronic fusion chip did not detect the four-wave mixing signal. The determination is: no signal, no information at this point or invalid reading, output "0".

[0052] Parallel reading: It is necessary to continuously read 1024 points, and the coordinates are pre-calculated.

[0053] Three sets of opposite-side photoelectric fusion chips simultaneously activate 1024 light-emitting units; The system emits 1024 sets of three laser beams, forming 1024 orthogonal intersection points within the storage device. At each intersection point, if the conditions are met, a four-wave mixing signal is generated. The information output is synchronously detected by the 1024 receiving units of the optoelectronic fusion chip, and 1024 bits of data are output at once, increasing the bandwidth by 1024 times.

[0054] Example 4 A four-wave mixing signal verification experiment was conducted to verify the sensitivity of four-wave mixing to early blocking. The experimental design is as follows: Write a single point into a three-dimensional storage volume Read using three laser beams Measure the strength of the four-wave mixing signal; exist Previously written to another point (On the same optical path), read again , to measure signal strength.

[0055] Result: None At that time, a strong four-wave mixing signal was detected. At that time, the signal disappeared.

[0056] Therefore, the present invention adopts the above-mentioned six-sided three-dimensional optical storage and computing integrated chip and its storage and computing method, and uses the third-order nonlinear optical effect four-wave mixing to realize the uniqueness determination of information writing and reading.

[0057] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the technical solutions of the present invention, and these modifications or equivalent substitutions cannot cause the modified technical solutions to deviate from the spirit and scope of the technical solutions of the present invention.

Claims

1. A six-sided three-dimensional optical storage and computing integrated chip, characterized in that, include: Three-dimensional storage volume, a square or rectangular body formed by stacking and bonding nanocrystalline materials; Six optoelectronic fusion chips are respectively attached to the six outer surfaces of the three-dimensional storage body, and the six optoelectronic fusion chips form three pairs of opposite optoelectronic fusion chips. The laser writing module is located in the middle of three sets of face-to-face optoelectronic fusion chip pairs. It is used to control the three sets of face-to-face optoelectronic fusion chip pairs to simultaneously emit high-frequency, high-power laser beams when storing information, thereby changing the nanocrystalline phase inside the three-dimensional storage body. The laser reading module is located in the middle of the three sets of face-to-face optoelectronic fusion chip pairs. It is used to control the three sets of face-to-face optoelectronic fusion chip pairs to simultaneously emit low-frequency, low-power laser beams during information reading, thereby exciting the third-order nonlinear polarizability of the altered nanocrystalline phase and generating four-wave mixed signal light. The laser reading module adopts both single-point reading and parallel reading methods. The three sets of opposite-side optoelectronic fusion chip pairs include: The information input optoelectronic fusion chip pair is used to emit a laser beam propagating along the X-axis. ; The information output optoelectronic fusion chip pair is used to emit a laser beam propagating along the Y-axis. The judgment is made based on the reading of the four-wave mixed frequency signal light; The resource-requesting optoelectronic fusion chip pair is used to emit a laser beam propagating along the Z-axis. .

2. The six-sided three-dimensional optical storage and computing integrated chip according to claim 1, characterized in that: The nanocrystal materials forming the three-dimensional memory have a crystal phase-dependent third-order nonlinear polarizability, and all nanocrystals have the same crystal phase. Each optoelectronic fusion chip includes a control circuit, a calibration memory, a light-emitting unit, and a receiving unit. The light-emitting unit is a VCSEL laser emitting array used to emit laser beams, and the receiving unit is a high-sensitivity photodetector array used to detect four-wave mixing signals.

3. The six-sided three-dimensional optical storage and computing integrated chip according to claim 2, characterized in that, The laser writing module alters the crystal phase of nanocrystals within the three-dimensional storage unit by controlling the light-emitting units of three sets of face-to-face optoelectronic fusion chip pairs to simultaneously emit high-frequency, high-power laser beams, causing the three laser beams to orthogonally converge at the target microcrystal particle sites within the three-dimensional storage unit. Through the accumulation of energy from high-frequency, high-power lasers, the microcrystalline phase at the target microcrystalline particle sites reaches a threshold, causing a change in the microcrystalline phase. The changed microcrystalline phase exhibits different third-order nonlinear polarizabilities. The frequency range of the high-frequency, high-power laser is [specified range]. Hz, with a power range of 10-100mW.

4. The six-sided three-dimensional optical storage and computing integrated chip according to claim 3, characterized in that, The laser readout module generates four-wave mixed signal light, specifically including: During information reading, the three sets of opposite-side optoelectronic fusion chips simultaneously emit low-frequency, low-power laser beams to the light-emitting unit, causing the three laser beams to intersect orthogonally at the target microcrystalline particle location. When the crystal phase at the target microcrystalline particle location has changed and all three laser beams can reach the target microcrystalline particle location, the three laser beams generate a four-wave mixing signal light by changing the third-order nonlinear polarizability. Among them, the frequency range of the low-frequency, low-power laser beam is: Hz, power range of 0.1-1mW, signal light intensity meets , express exist The light intensity at that location, express exist The light intensity at that location, express exist The light intensity at that location, express The third-order nonlinear polarizability after the microcrystalline phase is changed.

5. The six-sided three-dimensional optical storage and computing integrated chip according to claim 4, characterized in that: When using parallel reading, control the three sets of opposite-side optoelectronic fusion chips to transmit simultaneously. Groups of low-frequency, low-power laser beams, respectively corresponding to Different target microcrystalline particle sites, producing A four-wave mixed-frequency light signal, information output optoelectronic fusion chip for... The group receiving unit simultaneously The four-wave mixed frequency signal light is read and judged.

6. The six-sided three-dimensional optical storage and computing integrated chip according to claim 5, characterized in that, The reading and judgment based on the four-wave mixed signal light includes: the information output optoelectronic fusion chip detects the four-wave mixed signal light in the receiving unit. If a strong four-wave mixed signal light is detected, it is determined that the target microcrystalline particle position has stored information; otherwise, it is determined that no information is stored or the reading is invalid.

7. The six-sided three-dimensional optical storage and computing integrated chip according to claim 1, characterized in that: It also includes a calibration module, which is connected to three sets of face-to-face photoelectric fusion chips to achieve accurate calibration of the light-emitting unit and the receiving unit of the three sets of face-to-face photoelectric fusion chips. The calibration is completed when the signal continuity detection is achieved between each pair of light-emitting unit and the receiving unit.

8. The six-sided three-dimensional optical storage and computing integrated chip according to claim 1, characterized in that: A cognitive system is installed on the three-dimensional storage volume, and the cognitive system includes: The input module, connected to the information input optoelectronic fusion chip, is used to receive multimodal external input information; The memory module includes short-term memory units, long-term memory units, and permanent memory units. The long-term memory units and permanent memory units store input information in the nanocrystalline particles of the three-dimensional storage body through the collaborative writing of three sets of face-to-face optoelectronic fusion chip pairs. The reasoning module is used to perform logical reasoning based on input and stored information. The output module, connected to the information output optoelectronic fusion chip, is used to output the reasoning results; The inner loop module is used to perform frequency statistics, weight calculation and correlation analysis on stored information when the cognitive system is idle, and to extract the strong correlations verified by high frequency into the law of permanent memory.

9. A six-sided three-dimensional optical storage and computing integrated chip according to claim 8, characterized in that, The formula for calculating the maximum storage density of a three-dimensional storage volume is: ； in, The wavelength of the laser. This indicates the upper limit of storage density.

10. A storage computing method for a six-sided three-dimensional optical storage and computing integrated chip, applied to the six-sided three-dimensional optical storage and computing integrated chip as described in any one of claims 1-9, characterized in that, Includes the following steps: S1. Chip initialization and calibration: The three-dimensional storage body is subjected to crystal phase uniformity processing to ensure that all nanocrystalline phases are in a unified initial state. The calibration module is used to calibrate the three sets of face-to-face photoelectric fusion chip pairs to establish the mapping relationship between the light-emitting unit and the receiving unit. S2. Information Writing: When storing information, the light-emitting units of the three sets of opposite optoelectronic fusion chip pairs are controlled to simultaneously emit high-frequency, high-power laser beams, causing the three laser beams to orthogonally converge at the target microcrystalline particle location within the three-dimensional storage volume. Through the energy accumulation of high-frequency and high-power lasers, the microcrystalline phase at the target microcrystalline particle site reaches the threshold, and the microcrystalline phase changes. The changed microcrystalline phase has different third-order nonlinear polarizabilities. S3. Information Reading: When reading information, the light-emitting units of the three sets of opposite optoelectronic fusion chip pairs simultaneously emit three low-frequency, low-power laser beams, so that the three laser beams are focused on the target microcrystalline particle location. Orthogonal intersecting, exciting the third-order nonlinear polarizability of the altered nanocrystalline phase, generating detection four-wave mixing signal light, and the information output optoelectronic fusion chip detects the four-wave mixing signal light by the receiving unit and reads and judges it; S4. Parallel information reading: During parallel reading, control the three sets of opposite-side optoelectronic fusion chips to simultaneously transmit. Groups of low-frequency, low-power laser beams, respectively corresponding to Different target microcrystalline particle sites, producing A four-wave mixed-frequency light signal, information output optoelectronic fusion chip for... The group receiving unit simultaneously The four-wave mixed frequency signal light is read and judged.

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