Ce-doped gallium oxide film, and preparation method and application thereof

Abstract

This invention belongs to the technical field of semiconductor devices or scintillation devices, specifically relating to a Ce-doped gallium oxide thin film, its preparation method, and its application. The preparation method includes the following steps: cleaning a sapphire substrate; dissolving gallium acetylacetonate and cerium acetylacetonate in water, and adding hydrochloric acid to promote dissolution, obtaining a deposition solution; using an inert gas as the carrier gas and hydrogen as the reducing gas, supplying the deposition solution in a pulsed manner, ultrasonically atomizing it, and then delivering it to the surface of the sapphire substrate, depositing the Ce-doped gallium oxide thin film at 550~650℃; the pulsed supply means that after a set feeding time, the feeding is stopped for 10~50 seconds, and the carrier gas is continuously introduced during the feeding stop period. This invention prepares Ce-doped Ga2O3 thin films through chemical vapor deposition, which can effectively solve the problems of component segregation and difficulty in achieving uniform doping that are easily caused by traditional solid-phase doping methods.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device or scintillation device technology, specifically relating to a Ce-doped gallium oxide thin film, its preparation method and application. Background Technology

[0002] The statements herein provide only background information in relation to this invention and do not necessarily constitute prior art.

[0003] Scintillation materials are a class of materials that emit ultraviolet-visible light under the influence of high-energy particles (such as alpha, beta particles, and neutrons) or radiation (such as X-rays and gamma rays). Their working principle is based on the fluorescence radiation generated when atoms or ions within the material are excited. Due to their high light output efficiency, fast response speed, and good chemical stability and mechanical strength, scintillation materials have wide applications in fields such as nuclear physics detection, medical imaging, and security inspection.

[0004] However, traditional scintillation materials are mostly single-crystal solids. When applied over large areas, they are prone to cracking due to the mismatch of thermal expansion coefficients. Their minimum thickness is limited by mechanical strength (usually ≥0.1 mm), making it difficult to achieve sub-millimeter-level ultra-thin designs. This poses a bottleneck for the development of miniaturized and flexible devices using traditional crystal scintillation materials.

[0005] Ce 3+ The emission wavelength range is 300-600 nm (ultraviolet-visible band), which highly matches the sensitivity band of silicon-based photodiodes (spectral response range 300-1100 nm) or photomultiplier tubes (PMTs), eliminating the need for an additional fluorescence conversion layer and simplifying the device structure. Meanwhile, Ce... 3+ The 4f→5d transition of ions has a short decay time (nanosecond level) and high luminescence efficiency, making it suitable for high count rate scenarios (such as particle collision experiments and real-time imaging). Ce 3+ Doping into the matrix material has the potential to prepare scintillation materials.

[0006] But Ce 3+ The doping method is generally solid-phase doping, which involves mixing the Ce source with the matrix material in solid powder form and then using methods such as high-temperature sintering and melting to induce Ce doping. 3+ The doping diffuses into the matrix lattice, but this doping method is prone to compositional segregation, causing Ce to... 3+ It is difficult to dope uniformly; and Ce 3+ It has strong reducing properties and is easily oxidized to Ce. 4+ This reduces flicker performance.

[0007] Furthermore, the doping methods described above produce bulk materials with luminescent centers (such as Ce). 3+The emitted ultraviolet / visible light may be absorbed by the matrix material or impurities, resulting in a self-absorption effect and further reducing its scintillation performance. Summary of the Invention

[0008] To address the shortcomings of existing technologies, the purpose of this invention is to provide a Ce-doped gallium oxide thin film, its preparation method, and its applications.

[0009] To achieve the above objectives, the present invention is implemented through the following technical solution: In a first aspect, the present invention provides a method for preparing a Ce-doped gallium oxide thin film, comprising the following steps: Cleaning treatment of sapphire substrate; Gallium acetylacetonate and cerium acetylacetonate were mixed and dissolved in water, and hydrochloric acid was added to promote dissolution, resulting in a deposition solution; Using an inert gas as the carrier gas and hydrogen as the reducing gas, the deposition solution is supplied in a pulsed manner, ultrasonically atomized, and then delivered to the surface of a sapphire substrate to deposit a Ce-doped gallium oxide thin film at 550~650℃. The pulsed feeding method involves stopping the feeding for 10-50 seconds after the feeding time is set, while continuously supplying carrier gas during the feeding stop period.

[0010] Secondly, the present invention provides a Ce-doped gallium oxide thin film, which is prepared by the aforementioned preparation method.

[0011] Thirdly, the present invention provides the application of the Ce-doped gallium oxide thin film as a scintillation device in the fields of nuclear physics detection, medical imaging, and security inspection.

[0012] The beneficial effects achieved by one or more embodiments of the present invention described above are as follows: This invention prepares Ce-doped Ga2O3 thin films via chemical vapor deposition, effectively solving problems such as component segregation and difficulty in achieving uniform doping that are common in traditional solid-phase doping methods. It also features rapid growth, high film quality, simple process, and ease of industrial production.

[0013] Gallium acetylacetonate and cerium acetylacetonate are dissolved in water. Adding hydrochloric acid effectively promotes the dissolution of both materials. During the deposition process, gallium acetylacetonate is heat-treated to obtain a Ga₂O₃ matrix, while cerium acetylacetonate maintains Ce₂O₃ content in a weakly reducing hydrogen atmosphere. 3+ When doped into a Ga2O3 matrix, the introduction of hydrogen gas can effectively prevent Ce from being absorbed. 3+ The oxidation process gives the prepared Ce-doped Ga2O3 film good scintillation properties.

[0014] Deposition solution droplets deposited on the surface of sapphire substrates are prone to agglomeration, leading to surface defects and affecting the performance of Ce-doped Ga2O3 films. This invention employs a pulsed feeding method, continuously introducing carrier gas during feeding pauses. This effectively repairs surface defects, improves the quality of Ce-doped Ga2O3 films, and thus ensures excellent scintillation performance.

[0015] In this invention, by preparing the scintillator in the form of a nano / micron-scale thin film, the physical limitations of traditional materials can be overcome, and it is expected to open up new application scenarios in cutting-edge fields such as quantum detection and flexible electronics. Attached Figure Description

[0016] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an improper limitation of the invention.

[0017] Figure 1 The images show the XRD patterns of the Ga2O3 thin films prepared in Examples 1 to 3 of this invention. Figure 2 The image shows the XRD pattern of the Ga2O3 thin film prepared in Comparative Example 1 of this invention. Figure 3 The XRD patterns are comparison images of the Ga2O3 films prepared in Examples 1 to 3 and Comparative Example 1 of this invention. Figure 4 The image shows the EDS spectrum of the Ga2O3 thin film prepared in Example 1 of this invention. Figure 5 The images show the scintillation spectra of the Ga2O3 thin films prepared in Examples 1 to 3 of this invention. Figure 6 The images show the scintillation spectra of the Ga2O3 thin films prepared in Comparative Examples 1 to 4 of this invention. Detailed Implementation

[0018] It should be noted that the following detailed description is illustrative and intended to provide further explanation of the invention. Unless otherwise specified, all technical and scientific terms used in this invention have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.

[0019] Regarding the existing Ce mentioned in the background art 3+ Doping is generally done in solid phase, which is prone to compositional segregation, causing Ce to... 3+The inventors encountered difficulties in achieving uniform doping, and the ultraviolet / visible light emitted from the bulk luminescent centers could be absorbed by the matrix material or impurities, leading to a self-absorption effect and further reducing its scintillation performance. To address this, they attempted to prepare Ce-doped gallium oxide films via vapor deposition. However, during the experiments, they discovered that because gallium acetylacetonate and cerium acetylacetonate are dissolved in water containing oxygen, Ce was easily absorbed during the preparation process. 3+ Oxidized to Ce 4+ This weakens the scintillation performance of Ce-doped gallium oxide films.

[0020] Furthermore, the mixed aqueous solution of gallium acetylacetonate and cerium acetylacetonate is deposited onto the surface of the sapphire substrate after atomization. The deposited droplets tend to agglomerate, and after heat treatment, defects are easily formed inside the film, further weakening the scintillation performance of the Ce-doped gallium oxide film.

[0021] Based on the above findings, the inventors explored the fabrication process and subsequently provided a method for preparing Ce-doped gallium oxide thin films, comprising the following steps: Cleaning treatment of sapphire substrate; Gallium acetylacetonate and cerium acetylacetonate were mixed and dissolved in water, and hydrochloric acid was added to promote dissolution, resulting in a deposition solution; Using an inert gas as the carrier gas and hydrogen as the reducing gas, the deposition solution is supplied in a pulsed manner, ultrasonically atomized, and then delivered to the surface of a sapphire substrate to deposit a Ce-doped gallium oxide thin film at 550~650℃. The pulsed feeding method involves stopping the feeding for 10-50 seconds after the feeding time is set, while continuously supplying carrier gas during the feeding stop period.

[0022] Gallium acetylacetonate and cerium acetylacetonate, as precursors, have limited solubility in water. Direct mixing may not result in sufficient dissolution to form a homogeneous solution. However, the addition of hydrochloric acid can effectively improve the dissolution of both, ensuring uniform composition of the deposition solution and thus guaranteeing the uniformity of the prepared film.

[0023] Ce 3+ It has strong reducing properties and is easily oxidized to Ce during high-temperature deposition. 4+ Ce 4+ As a nonradiative recombination center, Ce traps excited charge carriers, causing energy to dissipate as heat and significantly reducing scintillator yield. Therefore, the valence state of Ce must be strictly controlled during scintillator fabrication to ensure that Ce remains in its prime position. 3+ The luminescent centers are dominant. Hydrogen, as a reducing gas, can provide a weakly reducing atmosphere in the deposition environment, suppressing Ce. 3+ The oxidation reaction ensures Ce 3+ Stable doping in the Ga2O3 matrix ensures high light output efficiency and fast response characteristics of the thin film.

[0024] If droplets formed after the deposition solution is atomized are continuously supplied, they are prone to agglomerate on the substrate surface and form irregular accumulations, leading to defects such as pores and cracks inside the film. Pulse feeding reduces the amount of droplet deposition per unit time and lowers the probability of agglomeration through a "feed-stop" cycle.

[0025] During the feeding stoppage, a carrier gas (such as argon) continuously purges the substrate surface, removing unreacted precursor residues, volatile byproducts, and surface-adsorbed impurities, thus preventing these substances from forming defects in the thin film. Simultaneously, the atoms on the substrate surface possess a certain migration capability under high-temperature conditions; during the feeding stoppage phase, atomic rearrangement can fill surface vacancies, improving the thin film crystallization quality.

[0026] In some embodiments, the method for cleaning the sapphire substrate is to clean the sapphire substrate with anhydrous ethanol and deionized water respectively, and then dry it.

[0027] In some embodiments, the flow ratio of carrier gas to hydrogen is 30 to 40:1.

[0028] Hydrogen, as a reducing gas, requires a weakly reducing atmosphere to suppress Ce. 3+ Oxidized to Ce 4+ If the hydrogen ratio is too high, it may lead to over-reduction or introduce hydrogen impurities, affecting the crystallization quality of the thin film; if the ratio is too low, the reducing power will be insufficient, and it will not be able to effectively prevent Ce from forming. 3+ Oxidation leads to a decrease in scintillation performance.

[0029] In some embodiments, the pulse feeding method involves feeding for 3 to 8 minutes, stopping feeding for 20 to 40 seconds, and repeating this cycle.

[0030] In some embodiments, the molar ratio of cerium acetylacetone to gallium acetylacetone is 1% to 5%, preferably 2% to 4%.

[0031] Preferably, when depositing Ce-doped gallium oxide thin films, a gradient doping method is used to deposit the films, resulting in Ce-doped gallium oxide thin films with Ce doping concentration increasing from the inside to the outside. In the outermost Ce-doped gallium oxide thin film, the molar ratio of cerium to gallium is 2% to 4%.

[0032] The inventors discovered through experiments that if high concentrations of Ce are directly deposited... 3+ It can easily lead to Ce 3+ Aggregation in the thin film affects the scintillation performance of Ce-doped gallium oxide thin films.

[0033] Preferably, the deposition time of the outermost Ce-doped gallium oxide film is longer than that of the inner layers.

[0034] In some embodiments, the deposition temperature of the Ce-doped gallium oxide thin film is 560-640°C, and the deposition time is 0.5-3 hours. The deposition temperature can be 560°C, 570°C, 580°C, 590°C, 600°C, 610°C, 620°C, 630°C, or 640°C.

[0035] Secondly, the present invention provides a Ce-doped gallium oxide thin film, which is prepared by the aforementioned preparation method.

[0036] Thirdly, the present invention provides the application of the Ce-doped gallium oxide thin film as a scintillation device in the fields of nuclear physics detection, medical imaging, and security inspection.

[0037] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments: Example 1 s1, Substrate pretreatment s101. Wipe the surface of the sapphire substrate on the c-side with a clean, lint-free cloth moistened with anhydrous ethanol to remove visible dirt. s102. Place the sapphire substrate on a cleaning rack, put it in a beaker, pour in anhydrous ethanol to immerse it, put it in an ultrasonic cleaner for 20 minutes, then take it out and rinse the surface with a nitrogen gun to dry it. s103. Place the sapphire substrate on a cleaning rack, immerse it in a beaker filled with deionized water, and clean it in an ultrasonic cleaner for 15 minutes. Then remove it and rinse the surface with a nitrogen gun to dry it. Repeat this step twice to obtain a clean and dry sapphire substrate.

[0038] s2, Preparation of precursor solution S201. Prepare gallium acetylacetonate with a purity of 99.99% and cerium acetylacetonate powder with a purity of 99.99%. Weigh 1.835 g of gallium acetylacetonate solid and 0.022 g of cerium acetylacetonate solid, dissolve them in 100 mL of deionized water, and add 1.5 mL of hydrochloric acid to promote dissolution; so that the doping concentration is 1% (1% is the molar ratio of cerium acetylacetonate to gallium acetylacetonate). s202. Place the mixed solution in a magnetic stirrer and stir for more than 1 hour to ensure that the solid is fully dissolved and mixed evenly.

[0039] s3, Chemical Vapor Deposition Process s301. Pour the prepared precursor solution into the ultrasonic atomizing vessel, ensuring that the solution volume is sufficient to support the entire growth process.

[0040] s302. Set the frequency of the ultrasonic nebulizer to 2.4MHz to ensure that the precursor solution can be effectively atomized into fine droplets to facilitate thermal decomposition and reaction during the CVD process.

[0041] s303. Set the flow rate of inert argon gas to 3500 sccm to ensure that the atomized droplets can react and be uniformly delivered to the substrate surface; the distance between the sapphire substrate and the ultrasonic atomizer nozzle is 15 mm.

[0042] s304. Set the H2 flow rate to 100 sccm as a reducing gas to prevent Ce from spreading. 3+ Oxidation.

[0043] s305. The substrate is heated to 600°C using a temperature control system at a heating rate of 10°C / min, and this temperature range is maintained throughout the growth process.

[0044] s306. After reaching the set substrate temperature, start the ultrasonic atomizer to begin atomizing the precursor solution. Simultaneously, maintain the argon gas flow rate to deliver the atomized precursor droplets to the substrate surface.

[0045] s307. Pulse-feed atomized feed for 5 minutes, then stop for 30 seconds. During the stop, argon carrier gas is continuously introduced to remove residual impurities from the growth surface.

[0046] s308. The growth time was controlled to be 2h to obtain a 1% Ce-doped Ga2O3 film.

[0047] Example 2 s1, Substrate pretreatment s101. Wipe the surface of the sapphire substrate on the c-side with a clean, lint-free cloth moistened with anhydrous ethanol to remove visible dirt. s102. Place the sapphire substrate on a cleaning rack, put it in a beaker, pour in anhydrous ethanol to immerse it, put it in an ultrasonic cleaner for 20 minutes, then take it out and rinse the surface with a nitrogen gun to dry it. s103. Place the sapphire substrate on a cleaning rack, immerse it in a beaker filled with deionized water, and clean it in an ultrasonic cleaner for 15 minutes. Then remove it and rinse the surface with a nitrogen gun to dry it. Repeat this step twice to obtain a clean and dry sapphire substrate.

[0048] s2, Preparation of precursor solution S201. Prepare gallium acetylacetonate with a purity of 99.99% and cerium acetylacetonate powder with a purity of 99.99%. Weigh 1.835 g of gallium acetylacetonate solid and 0.066 g of cerium acetylacetonate solid, dissolve them in 100 mL of deionized water, and add 1.5 mL of hydrochloric acid to promote dissolution; to achieve a doping concentration of 3%. s202. Place the mixed solution in a magnetic stirrer and stir for more than 1 hour to ensure that the solid is fully dissolved and mixed evenly.

[0049] s3, Chemical Vapor Deposition Process s301. Pour the prepared precursor solution into the ultrasonic atomizing vessel, ensuring that the solution volume is sufficient to support the entire growth process.

[0050] s302. Set the frequency of the ultrasonic nebulizer to 2.4MHz to ensure that the precursor solution can be effectively atomized into fine droplets to facilitate thermal decomposition and reaction during the CVD process.

[0051] s303. Set the flow rate of inert argon gas to 3500 sccm to ensure that the atomized droplets can react and be uniformly delivered to the substrate surface.

[0052] s304. Set the H2 flow rate to 100 sccm as a reducing gas to prevent Ce from spreading. 3+ Oxidation.

[0053] s305. Use a temperature control system to heat the substrate to 600°C and maintain this temperature range throughout the growth process.

[0054] s306. After reaching the set substrate temperature, start the ultrasonic atomizer to begin atomizing the precursor solution. Simultaneously, maintain the argon gas flow rate to deliver the atomized precursor droplets to the substrate surface.

[0055] s307. Pulse-feed atomized feed for 5 minutes, then stop for 30 seconds. During the stop, argon carrier gas is continuously introduced to remove residual impurities from the growth surface.

[0056] In the above chemical vapor deposition process, a 1% Ce doping solution (preparation method as described in Example 1) was first used to grow for 30 min, and then a 3% Ce doping solution was used to grow for 90 min to obtain a 3% Ce doped Ga2O3 thin film.

[0057] Example 3 s1, Substrate pretreatment s101. Wipe the surface of the sapphire substrate on the c-side with a clean, lint-free cloth moistened with anhydrous ethanol to remove visible dirt. s102. Place the sapphire substrate on a cleaning rack, put it in a beaker, pour in anhydrous ethanol to immerse it, put it in an ultrasonic cleaner for 20 minutes, then take it out and rinse the surface with a nitrogen gun to dry it. s103. Place the sapphire substrate on a cleaning rack, immerse it in a beaker filled with deionized water, and clean it in an ultrasonic cleaner for 15 minutes. Then remove it and rinse the surface with a nitrogen gun to dry it. Repeat this step twice to obtain a clean and dry sapphire substrate.

[0058] s2, Preparation of precursor solution S201. Prepare gallium acetylacetonate with a purity of 99.99% and cerium acetylacetonate powder with a purity of 99.99%. Weigh 1.835 g of gallium acetylacetonate solid and 0.11 g of cerium acetylacetonate solid, dissolve them in 100 mL of deionized water, and add 1.5 mL of hydrochloric acid to promote dissolution; to achieve a doping concentration of 5%. s202. Place the mixed solution in a magnetic stirrer and stir for more than 1 hour to ensure that the solid is fully dissolved and mixed evenly.

[0059] s3, Chemical Vapor Deposition Process s301. Pour the prepared precursor solution into the ultrasonic atomizing vessel, ensuring that the solution volume is sufficient to support the entire growth process.

[0060] s302. Set the frequency of the ultrasonic nebulizer to 2.4MHz to ensure that the precursor solution can be effectively atomized into fine droplets to facilitate thermal decomposition and reaction during the CVD process.

[0061] s303. Set the flow rate of inert argon gas to 3500 sccm to ensure that the atomized droplets can react and be uniformly delivered to the substrate surface.

[0062] s304. Set the H2 flow rate to 100 sccm as a reducing gas to prevent Ce from spreading. 3+ Oxidation.

[0063] s305. Use a temperature control system to heat the substrate to 600°C and maintain this temperature range throughout the growth process.

[0064] s306. After reaching the set substrate temperature, start the ultrasonic atomizer to begin atomizing the precursor solution. Simultaneously, maintain the argon gas flow rate to deliver the atomized precursor droplets to the substrate surface.

[0065] s307. Pulse-feed atomized feed for 5 minutes, then stop for 30 seconds. During the stop, argon carrier gas is continuously introduced to remove residual impurities from the growth surface.

[0066] In the above chemical vapor deposition process, a 1% Ce doping solution (preparation method as described in Example 1) was first used to grow for 15 min, followed by a 3% Ce doping solution (preparation method as described in Example 2) for 15 min, and finally a 5% Ce doping solution was used to grow for 90 min to obtain a 5% Ce doped Ga2O3 thin film.

[0067] Comparative Example 1 The difference from Example 2 is that in step s201, only 1.835 g of gallium acetylacetonate solid with a purity of 99.99% is weighed, dissolved in 100 mL of deionized water, and 1.5 mL of hydrochloric acid is added to promote dissolution. The other steps are the same as in Example 2.

[0068] Comparative Example 2 The difference from Example 2 is that H2 was not introduced as a reducing gas in step s304.

[0069] The other steps are the same as in Example 2.

[0070] Comparative Example 3 The difference from Example 2 is that in step s307, the pulse feeding method is not used, that is, the material is continuously fed, and the step of stopping the material for 30 seconds is omitted.

[0071] The other steps are the same as in Example 2.

[0072] Comparative Example 4 The difference from Example 2 is that, in the chemical vapor deposition process, a 3% Ce-doped solution was directly used for growth for 2 hours. The other steps are the same as in Example 2.

[0073] The epitaxial films of Examples 1-3 and Comparative Examples 1-4 were characterized, and the results are as follows: Figure 1 The images show the XRD patterns of the Ga2O3 films prepared in Examples 1 to 3 of this invention. Figure 2 The image shows the XRD pattern of the undoped Ga2O3 thin film prepared in Comparative Example 1 of this invention. As can be seen from the image, in addition to the substrate peak, there is a diffraction peak at 40.47°, corresponding to the (0006) plane of α-Ga2O3, confirming that the Ga2O3 thin film was successfully grown on the sapphire substrate.

[0074] Generally, the stronger the diffraction peak, the better the film quality. Figure 3 It can be seen that the diffraction peak intensity of Ce-doped Ga2O3 film is larger, indicating better crystal quality.

[0075] Figure 4 The image shows the EDS spectrum of the Ga2O3 thin film prepared in Example 1 of this invention. The presence of Ce element can be seen from the image, indicating that the Ga2O3 thin film prepared in this invention is a Ce-doped thin film.

[0076] Figure 5 The images show the scintillation spectra of the Ga2O3 thin films prepared in Examples 1-3 of this invention. The samples exhibit a distinct emission peak around 400 nm, which is Ce. 3+The results of ion doping also indirectly prove the presence of Ce. The sample in Example 2 showed the highest emission peak intensity, while the sample in Example 1 showed the lowest, indicating that the film exhibited the strongest scintillation performance at a doping concentration of 3%. The low emission intensity at a doping concentration of 5% in Example 3 is due to a concentration quenching mechanism; at higher concentrations, Ce... 3+ Enhanced interion energy transfer and increased probability of nonradiative transitions lead to decreased luminescence efficiency.

[0077] Figure 6 The scintillation spectra of the Ga2O3 thin films prepared in Comparative Examples 1 to 4 are shown. It can be seen that the samples in Comparative Examples 2 to 4 exhibit emission peaks near 300 nm and 400 nm, while the sample in Comparative Example 1 only exhibits an emission peak near 300 nm. Comparative Example 1 is an undoped sample, exhibiting only an intrinsic gallium oxide emission peak near 300 nm, while the emission peak near 400 nm of the samples in Comparative Examples 2 to 4 is Ce. 3+ The result of ion doping was that the intensity was lower than that of Examples 1-3, indicating that the film quality was low and the emission peak was not obvious. However,... Figure 5 In the process, due to the large intensity of the emission peak, part of its peak at 300nm is masked.

[0078] The above data all demonstrate that the embodiments of the present invention successfully prepared Ce-doped Ga2O3 thin films using the Mist-CVD method, and improved the scintillation performance of the thin films through gradient doping and pulse deposition techniques.

[0079] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for preparing a Ce-doped gallium oxide thin film, characterized in that: Includes the following steps: Cleaning treatment of sapphire substrate; Gallium acetylacetonate and cerium acetylacetonate were mixed and dissolved in water, and hydrochloric acid was added to promote dissolution, resulting in a deposition solution; Using an inert gas as the carrier gas and hydrogen as the reducing gas, the deposition solution is supplied in a pulsed manner, ultrasonically atomized, and then delivered to the surface of a sapphire substrate to deposit a Ce-doped gallium oxide thin film at 550~650℃. The pulsed feeding method involves stopping the feeding for 10-50 seconds after the feeding time is set, while continuously supplying carrier gas during the feeding stop period.

2. The method for preparing Ce-doped gallium oxide thin films according to claim 1, characterized in that: The method for cleaning sapphire substrates is to clean them with anhydrous ethanol and deionized water respectively, and then dry them.

3. The method for preparing Ce-doped gallium oxide thin films according to claim 1, characterized in that: The flow rate ratio of carrier gas to hydrogen is 30~40:

1.

4. The method for preparing Ce-doped gallium oxide thin films according to claim 1, characterized in that: The pulse feeding method involves feeding for 3-8 minutes, stopping feeding for 20-40 seconds, and repeating this cycle.

5. The method for preparing Ce-doped gallium oxide thin films according to claim 1, characterized in that: The molar ratio of cerium acetylacetone to gallium acetylacetone is 1% to 5%.

6. The method for preparing Ce-doped gallium oxide thin films according to claim 5, characterized in that: The molar ratio of cerium acetylacetone to gallium acetylacetone is 2% to 4%.

7. The method for preparing Ce-doped gallium oxide thin films according to claim 1, characterized in that: When depositing Ce-doped gallium oxide thin films, a gradient doping method is used to obtain Ce-doped gallium oxide thin films with Ce doping concentration increasing from the inside to the outside. In the outermost Ce-doped gallium oxide thin film, the molar ratio of cerium to gallium is 2% to 4%.

8. The method for preparing Ce-doped gallium oxide thin films according to claim 7, characterized in that: The deposition time of the outermost Ce-doped gallium oxide film is longer than that of the inner layers.

9. A Ce-doped gallium oxide thin film, characterized in that: It is prepared by any one of the preparation methods described in claims 1-8.

10. The application of the Ce-doped gallium oxide thin film of claim 9 as a scintillation device in the fields of nuclear physics detection, medical imaging, and security inspection.

Images