A BGA ceramic substrate-based MEMS inertial device and a processing method thereof
By using a three-dimensional integrated structure based on a BGA ceramic substrate, MEMS inertial information processing integrated circuits, sensitive structure bare chips, and passive devices are integrated in a high-density hybrid manner, which solves the problems of large device size and single function in the existing technology and realizes MEMS inertial devices with smaller size and higher performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING INST OF AEROSPACE CONTROL DEVICES
- Filing Date
- 2026-03-17
- Publication Date
- 2026-07-10
AI Technical Summary
Existing MEMS inertial devices are characterized by large size, limited integration density, and single function. They have not achieved integrated passive device and chip integration, which restricts the development of devices towards smaller size and higher performance.
A three-dimensional integrated structure based on BGA ceramic substrate is adopted. The bare chip of MEMS inertial information processing integrated circuit, the bare chip of sensitive structure and passive device are connected by bonding and bonding wires. BGA solder balls and solder are used for packaging to achieve three-dimensional high-density hybrid integration.
It enables miniaturization, multifunctionality, and high-density packaging of MEMS inertial devices, improving system integration and electrical performance, reducing package size, and increasing functional diversity.
Smart Images
Figure CN122360433A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor device technology, and in particular to a MEMS inertial device based on a BGA ceramic substrate. This invention also relates to a method for fabricating the MEMS inertial device. Background Technology
[0002] As inertial devices continue to evolve towards miniaturization and high performance, there is a growing demand for smaller package sizes and higher package densities. Three-dimensional packaging is a high-density packaging technology that has been rapidly developing internationally in recent years. Due to limitations in package dimensions, traditional two-dimensional planar packaging methods, which place chips with different functional modules within a package, cannot achieve very small package sizes. Therefore, three-dimensional stacking of chips in the height direction is a major trend. Three-dimensional integration of MEMS inertial information processing integrated circuit bare chips, MEMS inertial sensing structure bare chips, and passive devices based on BGA ceramic substrates not only achieves higher package density and reduces system size but also offers advantages such as increased functionality and lower power consumption.
[0003] Existing MEMS inertial devices typically employ leadless ceramic housings for planar packaging of bare chips for MEMS inertial information processing integrated circuits and MEMS inertial sensing structures. This approach has several drawbacks: the traditional planar layout results in a large device size and limited integration density; and the lack of integrated passive device functionality leads to a relatively limited range of functions. These factors collectively constrain the development of MEMS inertial devices towards smaller size and higher performance. Summary of the Invention
[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a MEMS inertial device based on a BGA ceramic substrate, thereby achieving a smaller size and higher performance for the MEMS inertial device.
[0005] The technical solution adopted in this invention is as follows: A MEMS inertial device based on a BGA ceramic substrate includes: a metal top cover 1, a bare MEMS inertial information processing integrated circuit 2, a bare MEMS inertial sensing structure 3, a BGA ceramic circuit substrate 4, adhesive 6, and bonding wire 7. The MEMS inertial sensing structure bare chip 3 is bonded to the upper surface of the BGA ceramic circuit substrate 4 with the front side facing up using adhesive 6. The MEMS inertial information processing integrated circuit bare chip 2 is bonded to the MEMS inertial sensing structure bare chip 3 with the front side facing up using adhesive 6. The pads of the MEMS inertial sensing structure bare chip 3 are connected to the corresponding pads of the MEMS inertial information processing integrated circuit bare chip 2 using bonding wires 7, and the pads of the MEMS inertial information processing integrated circuit bare chip 2 are connected to the corresponding pads of the BGA ceramic circuit substrate 4 using bonding wires 7. The metal cover 1 encapsulates the MEMS inertial information processing integrated circuit bare chip 2, the MEMS inertial sensing structure bare chip 3, and the BGA ceramic circuit substrate 4.
[0006] Furthermore, MEMS inertial devices also include passive devices 5, BGA solder balls 8, and solder 9; The BGA solder balls 8 are placed on the pads on the lower surface of the BGA ceramic circuit board 4, and several passive devices 5 are mounted to the pads on the lower surface of the BGA ceramic circuit board 4 using solder 9.
[0007] Furthermore, the passive device 5 includes one or more of resistors, capacitors, and inductors.
[0008] Furthermore, the solder 9 is selected from solders with a melting point in the range of 270℃ to 350℃.
[0009] Furthermore, the solder 9 is selected from gold-tin solder Au80Sn20 or tin-lead solder Sn10Pb90.
[0010] Furthermore, the BGA solder ball 8 is selected from lead-free solder with a melting point in the range of 150℃ to 230℃.
[0011] Furthermore, the BGA solder ball 8 is selected from tin-silver-copper solder Sn96.5Ag3.0Cu0.5, tin-lead solder Sn63Pb37, or tin-lead solder Sn50Pb50.
[0012] Secondly, the present invention also proposes a method for fabricating MEMS inertial devices based on BGA ceramic substrates, comprising the following steps: S1. Design a BGA ceramic circuit board 4 to interconnect the pads of MEMS inertial information processing integrated circuit bare chip 2, MEMS inertial sensing structure bare chip 3, and passive device 5 within the BGA ceramic circuit board 4. S2. Plasma cleaning is used to clean the bare MEMS inertial information processing integrated circuit 2, the bare MEMS inertial sensing structure 3, and the BGA ceramic circuit board 4. S3. The MEMS inertial sensing structure bare chip 3 is bonded to the upper surface of the BGA ceramic circuit substrate 4 with the front side facing up using adhesive 6. The MEMS inertial information processing integrated circuit bare chip 2 is bonded to the MEMS inertial sensing structure bare chip 3 with the front side facing up using adhesive 6. The adhesive is cured at room temperature. S4. The bonding pads of the MEMS inertial sensing structure bare chip 3 are connected to the corresponding bonding pads of the MEMS inertial information processing integrated circuit bare chip 2 by bonding wire 7, and the bonding pads of the MEMS inertial information processing integrated circuit bare chip 2 are connected to the corresponding bonding pads on the upper surface of the BGA ceramic circuit substrate 4 by bonding wire, forming a three-dimensional stacked structure. S5. The metal top cover is bonded to the BGA ceramic circuit board 4 using adhesive 6, encapsulating the MEMS inertial information processing integrated circuit bare chip 2, the MEMS inertial sensing structure bare chip 3, and the BGA ceramic circuit board 4 to form an environmental protection system. S6. Solder is printed onto the corresponding pads on the lower surface of the BGA ceramic circuit board 4 by screen printing. S7. Using a pick-and-place machine, the passive components are accurately placed on the corresponding pads on the lower surface of the BGA ceramic circuit board 4. Then, the BGA ceramic circuit board 4 is transferred to a reflow oven. The passive components 5 are reflow soldered to the lower surface of the BGA ceramic circuit board 4 through a reflow soldering process. S8. Place BGA solder balls 8 on the pads on the lower surface of the BGA ceramic circuit board 4, and reflow solder to form a signal circuit, and finally complete the packaging.
[0013] The advantages of this invention compared to the prior art are: (1) In addition to MEMS inertial information processing integrated circuit bare chip and MEMS inertial sensing structure bare chip, the present invention also includes passive devices, realizing the functional diversification of MEMS inertial devices; (2) The present invention can integrate MEMS inertial information processing integrated circuit bare chip, MEMS inertial sensitive structure bare chip and several passive devices in three-dimensional high-density hybrid integration. The planar area of the new device formed after integration is greatly reduced, the package size is compact, the package volume is effectively reduced, and high-density, multi-functional three-dimensional packaging is realized. (3) By stacking MEMS chips in three dimensions on the upper surface of the substrate and integrating passive devices on the lower surface, the present invention effectively reduces the package planar area and realizes the miniaturization of the device; by integrating sensitive, processing and passive components in the same package, the system integration and functional diversity are significantly improved; by utilizing the excellent characteristics of the ceramic substrate and combining optimized interconnect design, the signal path is shortened, thereby improving the electrical performance. Attached Figure Description
[0014] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings.
[0015] Figure 1 This is a cross-sectional schematic diagram of the MEMS inertial device based on a BGA ceramic substrate according to the present invention. Figure 2 This is a top view of the MEMS inertial device based on a BGA ceramic substrate of the present invention after the metal top cover has been removed. Figure 3 This is a bottom view schematic diagram of the MEMS inertial device based on a BGA ceramic substrate according to the present invention. As shown in the figure: 1-Metal top cover; 2-MEMS inertial information processing integrated circuit bare chip; 3-MEMS inertial sensing structure bare chip; 4-A BGA ceramic circuit board; 5-Passive device; 6-Adhesive; 7-Bonding wire; 8-BGA solder ball; 9-Solder. Detailed Implementation
[0016] To better understand the above technical solutions, the technical solutions of this application will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the embodiments of this application and the specific features in the embodiments are detailed descriptions of the technical solutions of this application, rather than limitations on the technical solutions of this application. In the absence of conflict, the embodiments of this application and the technical features in the embodiments can be combined with each other.
[0017] The core idea of this invention is to provide a MEMS inertial device based on a BGA ceramic substrate, thereby achieving three-dimensional high-density hybrid integration of MEMS inertial devices based on a BGA ceramic substrate.
[0018] To achieve the above idea, such as Figure 1 , Figure 2 As shown, the present invention provides a MEMS inertial device based on a BGA ceramic substrate, comprising: a metal top cover 1, a bare MEMS inertial information processing integrated circuit 2, a bare MEMS inertial sensing structure 3, a BGA ceramic circuit substrate 4, adhesive 6, and bonding wire 7. The MEMS inertial sensing structure bare chip 3 is bonded to the upper surface of the BGA ceramic circuit substrate 4 with the front side facing up using adhesive 6. The MEMS inertial information processing integrated circuit bare chip 2 is bonded to the MEMS inertial sensing structure bare chip 3 with the front side facing up using adhesive 6. The pads of the MEMS inertial sensing structure bare chip 3 are connected to the corresponding pads of the MEMS inertial information processing integrated circuit bare chip 2 using bonding wires 7, and the pads of the MEMS inertial information processing integrated circuit bare chip 2 are connected to the corresponding pads of the BGA ceramic circuit substrate 4 using bonding wires 7. The metal cover 1 encapsulates the MEMS inertial information processing integrated circuit bare chip 2, the MEMS inertial sensing structure bare chip 3, and the BGA ceramic circuit substrate 4.
[0019] Furthermore, MEMS inertial devices also include passive devices 5, BGA solder balls 8, and solder 9; such as Figure 3 As shown, the BGA solder balls 8 are placed on the pads on the lower surface of the BGA ceramic circuit board 4, and several passive devices 5 are mounted to the pads on the lower surface of the BGA ceramic circuit board 4 using solder 9.
[0020] Furthermore, the passive device 5 includes one or more of resistors, capacitors, and inductors.
[0021] Furthermore, the solder 9 is selected from solders with a melting point in the range of 270℃ to 350℃.
[0022] Furthermore, the solder 9 is selected from gold-tin solder Au80Sn20 or tin-lead solder Sn10Pb90.
[0023] Furthermore, the BGA solder ball 8 is selected from lead-free solder with a melting point in the range of 150℃ to 230℃.
[0024] Furthermore, the BGA solder ball 8 is selected from tin-silver-copper solder Sn96.5Ag3.0Cu0.5, tin-lead solder Sn63Pb37, or tin-lead solder Sn50Pb50.
[0025] Example 1: Using a BGA ceramic circuit board as a carrier, a MEMS inertial information processing integrated circuit bare chip, a MEMS inertial sensing structure bare chip, and several passive devices are integrated in a three-dimensional high-density hybrid system. The MEMS inertial information processing integrated circuit bare chip and the MEMS inertial sensing structure bare chip are integrated on the upper surface of the BGA ceramic circuit board by gold wire bonding to form a three-dimensional stacked structure. The passive devices such as resistors and capacitors are integrated on the lower surface of the BGA ceramic circuit board by reflow soldering.
[0026] Specifically, this embodiment provides a MEMS inertial device based on a BGA ceramic substrate, such as... Figure 1 and Figure 2 As shown, the MEMS inertial device based on the BGA ceramic substrate includes a metal top cover 1, a bare MEMS inertial information processing integrated circuit 2, a bare MEMS inertial sensing structure 3, a BGA ceramic circuit substrate 4, several passive components 5, adhesive 6, bonding wire 7, BGA solder balls 8, and solder 9.
[0027] Combination Figure 2 , Figure 3 As shown, the MEMS inertial sensing structure bare chip 3 is bonded to the upper surface of the BGA ceramic circuit substrate 4 with the front side facing up using adhesive 6. The MEMS inertial information processing integrated circuit bare chip 2 is bonded to the MEMS inertial sensing structure bare chip 3 with the front side facing up using adhesive 6. The pads of the MEMS inertial sensing structure bare chip 3 are connected to the corresponding pads of the MEMS inertial information processing integrated circuit bare chip 2 using bonding wire 7. The pads of the MEMS inertial information processing integrated circuit bare chip 3 are connected to the corresponding pads of the BGA ceramic circuit substrate 4 using bonding wire 7. The MEMS inertial information processing integrated circuit bare chip 2, the MEMS inertial sensing structure bare chip 3, and the BGA ceramic circuit substrate 4 are encapsulated by a metal cover 1. BGA solder balls 8 made of Sn96.5Ag3.0Cu0.5 material are placed on the pads on the lower surface of the BGA ceramic circuit substrate 4. The passive components 5 of resistors, capacitors, and inductors required by the device are mounted to the pads on the lower surface of the BGA ceramic circuit substrate 4 using Au80Sn20 solder 9.
[0028] In this invention, the BGA ceramic circuit board 4 serves three functions: Firstly, it serves as a carrier for the metal top cover 1, the bare chip of the MEMS inertial information processing integrated circuit 2, the bare chip of the MEMS inertial sensing structure 3, and the passive device 5. Secondly, by wiring on the upper and lower surfaces of the BGA ceramic circuit substrate 4, circuit interconnection or functional pin merging is achieved between the MEMS inertial information processing integrated circuit bare chip 2, the MEMS inertial sensitive structure bare chip 3 and the passive device 5, so as to realize the integration between devices. Third, the pins of the entire MEMS inertial device are redistributed through the BGA ceramic circuit substrate 4. The pins of the hybrid integrated device, which consists of the MEMS inertial information processing integrated circuit bare chip 2 and the MEMS inertial sensing structure bare chip 3 located on the upper surface of the BGA ceramic circuit substrate 4 and several passive devices 5 located on the lower surface of the BGA ceramic circuit substrate 4, are redistributed on the lower surface of the BGA ceramic circuit substrate 4 to facilitate the interconnection between the MEMS inertial device and external circuits.
[0029] Example 2: The above-mentioned fabrication method for MEMS inertial devices based on BGA ceramic substrates includes the following steps: a. Design a BGA ceramic circuit board 4 to interconnect the bare chip 2 of MEMS inertial information processing integrated circuit, the bare chip 3 of MEMS inertial sensing structure, and the pads of passive devices within the BGA ceramic circuit board 4. b. Plasma cleaning is used to clean the bare MEMS inertial information processing integrated circuit 2, the bare MEMS inertial sensing structure 3, and the BGA ceramic circuit substrate 4. c. Using adhesive 6, the bare MEMS inertial sensing structure chip 3 is bonded to the upper surface of the BGA ceramic circuit substrate 4 with the front side facing up. Using adhesive 6, the bare MEMS inertial information processing integrated circuit chip 2 is bonded to the bare MEMS inertial sensing structure chip 3 with the front side facing up. The adhesive is cured at room temperature. d. The bonding pads of the MEMS inertial sensing structure bare chip 3 are connected to the corresponding bonding pads of the MEMS inertial information processing integrated circuit bare chip 2 by bonding wire 7, and the bonding pads of the MEMS inertial information processing integrated circuit bare chip 3 are connected to the corresponding bonding pads on the upper surface of the BGA ceramic circuit substrate 4 by bonding wire 7, forming a three-dimensional stacked structure. e. The metal cover 1 is bonded to the BGA ceramic circuit board 4 using adhesive 6, encapsulating the MEMS inertial information processing integrated circuit bare chip 2, the MEMS inertial sensing structure bare chip 3, and the BGA ceramic circuit board 4 to form an environmental protection system. f. Print solder 9 onto the corresponding pads on the lower surface of the BGA ceramic circuit board 4 using screen printing. g. Using a pick-and-place machine, the passive component 5 is accurately placed on the corresponding pad on the lower surface of the BGA ceramic circuit board 4. Then, the BGA ceramic circuit board 4 is transferred to a reflow oven, and the passive component 5 is reflow soldered to the lower surface of the BGA ceramic circuit board 4 through a reflow soldering process. h. Place BGA solder balls 8 on the pads on the lower surface of the BGA ceramic circuit board 4, and reflow solder to form a signal circuit, finally completing the packaging.
[0030] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.
Claims
1. A MEMS inertial device based on a BGA ceramic substrate, characterized in that, include: Metal top cover (1), MEMS inertial information processing integrated circuit bare chip (2), MEMS inertial sensitive structure bare chip (3), BGA ceramic circuit board (4), adhesive (6) and bonding wire (7). The MEMS inertial sensing structure bare chip (3) is bonded to the upper surface of the BGA ceramic circuit substrate (4) with the front side facing up using adhesive (6). The MEMS inertial information processing integrated circuit bare chip (2) is bonded to the MEMS inertial sensing structure bare chip (3) with the front side facing up using adhesive (6). The pads of the MEMS inertial sensing structure bare chip (3) are connected to the corresponding pads of the MEMS inertial information processing integrated circuit bare chip (2) using bonding wires (7). The pads of the MEMS inertial information processing integrated circuit bare chip (2) are connected to the corresponding pads of the BGA ceramic circuit substrate (4) using bonding wires (7). The metal cover (1) encapsulates the MEMS inertial information processing integrated circuit bare chip (2), the MEMS inertial sensing structure bare chip (3), and the BGA ceramic circuit substrate (4).
2. The MEMS inertial device based on a BGA ceramic substrate according to claim 1, characterized in that: It also includes passive components (5), BGA solder balls (8) and solder (9); The BGA solder balls (8) are placed on the pads on the lower surface of the BGA ceramic circuit board (4), and several passive devices (5) are mounted on the pads on the lower surface of the BGA ceramic circuit board (4) using solder (9).
3. A MEMS inertial device based on a BGA ceramic substrate according to claim 1, characterized in that: The passive device (5) includes one or more of resistors, capacitors, and inductors.
4. A MEMS inertial device based on a BGA ceramic substrate according to claim 1, characterized in that: The solder (9) is selected from solders with a melting point in the range of 270℃ to 350℃.
5. A MEMS inertial device based on a BGA ceramic substrate according to claim 1, characterized in that: The solder (9) is selected from gold-tin solder Au80Sn20 or tin-lead solder Sn10Pb90.
6. A MEMS inertial device based on a BGA ceramic substrate according to claim 1, characterized in that: The BGA solder ball (8) is selected from lead-free solder with a melting point in the range of 150℃ to 230℃.
7. A MEMS inertial device based on a BGA ceramic substrate according to claim 1, characterized in that: The BGA solder balls (8) are selected from tin-silver-copper solder Sn96.5Ag3.0Cu0.5, tin-lead solder Sn63Pb37, or tin-lead solder Sn50Pb50.
8. A method for fabricating a MEMS inertial device based on a BGA ceramic substrate as described in any one of claims 1-7, characterized in that, include: S1. Design a BGA ceramic circuit board (4) to interconnect the pads of MEMS inertial information processing integrated circuit bare chip (2), MEMS inertial sensitive structure bare chip (3), and passive device (5) within the BGA ceramic circuit board (4). S2. Plasma cleaning is used to clean the bare chip (2) of MEMS inertial information processing integrated circuit, the bare chip (3) of MEMS inertial sensitive structure and the BGA ceramic circuit substrate (4). S3. The MEMS inertial sensing structure bare chip (3) is bonded to the upper surface of the BGA ceramic circuit substrate (4) with the front side facing up using adhesive (6). The MEMS inertial information processing integrated circuit bare chip (2) is bonded to the MEMS inertial sensing structure bare chip (3) with the front side facing up using adhesive (6). The adhesive is cured at room temperature. S4. The pads of the MEMS inertial sensing structure bare chip (3) are connected to the corresponding pads of the MEMS inertial information processing integrated circuit bare chip (2) by bonding wire (7), and the pads of the MEMS inertial information processing integrated circuit bare chip (2) are connected to the corresponding pads on the upper surface of the BGA ceramic circuit substrate (4) by bonding wire to form a three-dimensional stacked structure. S5. The metal cover is bonded to the BGA ceramic circuit board (4) by adhesive (6) to encapsulate the MEMS inertial information processing integrated circuit bare chip (2), MEMS inertial sensitive structure bare chip (3) and BGA ceramic circuit board (4) to form environmental protection. S6. Solder is printed onto the corresponding pads on the lower surface of the BGA ceramic circuit board (4) by screen printing. S7. Using a pick-and-place machine, the passive components are accurately placed on the corresponding pads on the lower surface of the BGA ceramic circuit board (4). Then, the BGA ceramic circuit board (4) is transferred to a reflow oven and the passive components (5) are reflow soldered to the lower surface of the BGA ceramic circuit board (4) through a reflow soldering process. S8. BGA solder balls (8) are used to place balls on the pads on the lower surface of the BGA ceramic circuit board (4) and reflow soldering is performed to form a signal circuit and finally complete the packaging.