Gallium oxide epitaxial structure based on n-face sapphire substrate and application thereof

By growing polycrystalline gallium oxide thin films on n-sided sapphire substrates, the challenges of response speed and array integration of optoelectronic semiconductor devices have been solved, enabling reversible switching between photodetector and photosynaptic functions, thus improving device performance and compatibility.

CN122373693APending Publication Date: 2026-07-10NANJING UNIV OF POSTS & TELECOMM +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV OF POSTS & TELECOMM
Filing Date
2026-04-23
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

Existing optoelectronic semiconductor devices suffer from slow light response speed, difficulty in array design and integration, and high power consumption during operation of traditional three-terminal devices.

Method used

A gallium oxide epitaxial structure based on an n-plane sapphire substrate is used to grow a polycrystalline gallium oxide thin film on a sapphire/gallium oxide heterojunction by chemical vapor deposition. The carrier transport and defect state distribution are controlled by the atomic step morphology of the sapphire surface with specific crystal orientation, and a double heterojunction structure is constructed to realize the reversible switching between photodetector and photosynapse functions.

Benefits of technology

It achieves high sensitivity, fast response photoelectric detection performance and significant continuous photoconductivity, supports optical neural networks and intelligent image processing, and reduces system interconnection and energy consumption requirements.

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Abstract

This invention belongs to the fields of semiconductor thin film material growth technology and optoelectronic device technology, and discloses a gallium oxide epitaxial structure based on an n-plane sapphire substrate and its application in the fabrication of optoelectronic semiconductor devices or device arrays. The gallium oxide epitaxial structure includes a substrate and a Ga2O3 layer on the substrate. The substrate is the sapphire layer, which is a (11-23) oriented single-crystal sapphire, i.e., n-plane sapphire. The dual-mode device fabricated based on this gallium oxide epitaxial structure can achieve reversible functional switching under different bias voltages: it exhibits high sensitivity and fast response photodetector performance under low bias voltage; and it displays a significant and continuous photoconductivity effect under high bias voltage, which can be used to simulate the synaptic characteristics of brain-like neurons. This invention features a simple structural design and controllable process, enabling the simultaneous realization of high-performance ultraviolet photodetector and synaptic neural network functions in a single device, effectively improving the device's integration and application flexibility, and is suitable for fields such as ultraviolet imaging, optical communication, and intelligent sensing.
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