Wafer cleaning apparatus

Abstract

This application provides a wafer cleaning apparatus, including a cleaning unit and a transfer unit. The transfer unit includes: an arm for supporting the main body and transmitting torque to two clamping arms; two clamping arms symmetrically disposed at both ends of the arm for opening and closing under the action of torque; and two clamping heads disposed at the ends of the two clamping arms away from the arm for contacting the wafer when clamping it. The clamping head material has a water contact angle greater than 90°, and the clamping head has multiple clamping grooves spaced apart and in contact with the wafer. The surface of the clamping grooves has a micro-bump array, which forms a microchannel network. The clamping head includes a carrier layer, a functional layer, and a contact layer stacked sequentially. The functional layer contains a photocatalytic material or an amphiphilic molecular brush for decomposing contaminants and altering local hydrophilicity / hydrophobicity under ultraviolet light or thermal excitation. The contact layer has a micro-bump array for contacting the wafer.

Description

Technical Field

[0001] This application relates to the field of wafer cleaning technology, and to, but is not limited to, a wafer cleaning apparatus. Background Technology

[0002] In the cleaning process following chemical mechanical polishing (CMP), the wafer surface needs to maintain an extremely high level of cleanliness; therefore, it is necessary to minimize the amount of aqueous solution remaining on the wafer surface after cleaning. Specifically, during the process of the cleaning device retrieving and transferring the cleaned wafer, physical contact between the robotic arm and the wafer is unavoidable. In related technologies, due to the material, structure, size, and functional design of the robotic arm, water droplets on the surface of the robotic arm cannot be completely drained, resulting in solution residue on the wafer surface, affecting the cleanliness of the wafer, and causing defects on the wafer surface. Summary of the Invention

[0003] This application provides a wafer cleaning apparatus, including: a cleaning unit and a transmission unit; the cleaning unit is used to clean the wafer, and the transmission unit is used to transmit the wafer; the transmission unit includes: The arm bar is used to support the main body and transmit torque to the two clamping arms; The two clamping arms are symmetrically arranged at both ends of the arm lever, and are used to perform opening and closing actions under the action of the torque; Two clamping heads are respectively disposed at the ends of the two clamping arms away from the arm lever, for contacting the wafer when clamping the wafer; The clamping head material has a water contact angle greater than 90°, and the clamping head has multiple clamping grooves spaced apart and in contact with the wafer; the surface of the clamping grooves has a microbump array, which is used to form a microchannel network; the clamping head includes a carrier layer, a functional layer and a contact layer stacked sequentially. The functional layer contains photocatalytic materials or amphiphilic molecular brushes, which are used to decompose pollutants and change local hydrophilicity and hydrophobicity under the excitation of ultraviolet light or thermal energy. The contact layer has the microbump array for contacting the wafer.

[0004] In some embodiments, the shape of the microbumps in the microbump array is a composite of a truncated cone and a spherical end face; wherein... The ratio of the bottom diameter of the truncated cone to the height of the micro-protrusion is greater than or equal to 1:1 and less than or equal to 3:1; The ratio of the radius of curvature of the spherical end face to the height of the micro-bump is greater than or equal to 1:1.5 and less than or equal to 1:2.

[0005] In some embodiments, the ratio of the actual contact area between the microbump array and the wafer to the total contact area of ​​all the microbump arrays is greater than or equal to 0.01% and less than or equal to 1%. The distribution density of the micro-bump array increases from the center of rotation outwards.

[0006] In some embodiments, the ratio of the distribution density of the micro-bumps at the point furthest from the rotation center to the distribution density of the micro-bumps at the point closest to the rotation center is greater than or equal to 1.5 and less than or equal to 3. The rotation center is the center when the clamping arm rotates, causing the clamping head to rotate.

[0007] In some embodiments, the bottom of the cross-section of the microchannel is arc-shaped, and the parametric equation of the microchannel is D. h / L≤0.05; where, D h Where L is the hydraulic diameter of the microchannel and L is the length of the microchannel; and / or, The angle α between the direction of the line connecting the center of any of the micro-bumps to the nearest center of the microchannel inlet and the direction of the centrifugal force of the micro-bump is ≤15°; and / or, The main body of the microchannel is an Archimedean spiral, and the parametric equation of the Archimedean spiral is r(θ) = a + b × θ; where r is the distance from the center of rotation, θ is the angle, a is the initial radius, and b is the spiral growth rate.

[0008] In some embodiments, the materials of the clamping arm and the bearing layer include polyetheretherketone; The materials of the contact layer and the functional layer include polytetrafluoroethylene, polyimide, and fluoropolymers.

[0009] In some embodiments, the thickness of the contact layer is greater than or equal to 50 nanometers and less than or equal to 5000 nanometers; The ratio of the contact layer thickness to the functional layer thickness is greater than or equal to 0.1 and less than or equal to 0.3. The ratio of the thickness of the bearing layer to the thickness of the clamping head is greater than 0.9.

[0010] In some embodiments, the end of the clamping arm has a first surface and a second surface that intersect at an acute angle; the first surface is the inner sidewall of the clamping arm, and the second surface is the end face of the clamping arm. The outer side of the clamping head includes a third surface and a fourth surface; the third surface is attached to the first surface, and the fourth surface is tangent to the extension line of the second surface; the inner side is the side that clamps the wafer, and the outer side is the side opposite to the inner side.

[0011] In some embodiments, the end of the clamping arm further includes a fixing groove; the fixing groove is recessed in a direction perpendicular to the clamping arm; The clamping head also extends into the fixing groove and is connected to the clamping arm based on the fixing groove.

[0012] In some embodiments, the ratio of the width of the clamping arm to the width of the clamping head ranges from 0.8 to 1.2.

[0013] In some embodiments, the clamping head includes: Sub-connection section; Multiple sub-clamping portions are sequentially disposed on the inner side of the sub-connecting portion along the extending direction of the sub-connecting portion; the clamping groove serves as the sub-clamping portion, and the contact surface between the sub-clamping portion and the wafer is a V-shaped groove, an arc-shaped groove, or a trapezoidal groove.

[0014] In some embodiments, the included angle of the sub-clamping portion ranges from 80° to 108°; The ratio of the width of the sub-clamping part to the width of the clamping head ranges from 0.7 to 1.0. The ratio of the length of the sub-clamping part to the length of the clamping head ranges from 0.11 to 0.25.

[0015] In some embodiments, the width of the sub-clamping portion ranges from 6.5 mm to 11 mm.

[0016] In some embodiments, the clamping head includes two sub-clamping portions disposed at both ends of the sub-connecting portion; The width of the sub-clamping part is 9 mm, the length of the sub-clamping part is 11 mm, and the included angle of the sub-clamping part is 107.6°; the width of the clamping head is 12 mm.

[0017] In this embodiment, because the water contact angle of the clamping head material is greater than 90° and the surface of the clamping groove has a micro-protrusion array, the clamping head material has hydrophobic properties, making it easy for the aqueous solution to slide off the surface of the clamping head. Therefore, during the clamping process of the wafer, the surface of the clamping head is not only in a relatively dry state, but the aqueous solution between the clamping head and the wafer can also be discharged along the clamping head, so that no aqueous solution remains on the surface of the wafer, improving the cleanliness of the wafer surface and reducing surface defects. At the same time, the clamping head has three layers of graded materials: a bearing layer, a functional layer, and a contact layer, so that each layer performs its own function, avoiding the contradiction that a single material cannot simultaneously meet the mechanical, morphological, and surface chemical requirements, while improving the mechanical strength, fatigue life, and hydrophobicity of the clamping head. Attached Figure Description

[0018] In the accompanying drawings (which are not necessarily drawn to scale), similar reference numerals may describe similar parts in different views. Similar reference numerals with different letter suffixes may indicate different examples of similar parts. The drawings illustrate, by way of example and not limitation, the various embodiments discussed herein.

[0019] Figure 1 This is a schematic diagram of the structure of the wafer cleaning apparatus provided in the embodiments of this application; Figure 2 Schematic diagram of the transmission unit provided in the embodiments of this application Figure 1 ; Figure 3 A schematic diagram of the layout structure of the micro-bump array provided in an embodiment of this application; Figure 4 Schematic cross-section of the clamping head provided in the embodiments of this application Figure 1 ; Figure 5 Schematic cross-section of the clamping head provided in the embodiments of this application Figure 2 ; Figure 6 A schematic cross-sectional view of the micro-bumps provided in an embodiment of this application; Figure 7 Schematic diagram of the structure of the clamping arm and clamping head provided in the embodiments of this application. Figure 1 ; Figure 8 Schematic diagram of the structure of the clamping arm and clamping head provided in the embodiments of this application. Figure 2 ; Figure 9 Schematic diagram of the structure of the clamping arm and clamping head provided in the embodiments of this application. Figure 3 ; Figure 10 This is a schematic diagram of the structure of the clamping head provided in the embodiments of this application; Figure 11 Schematic diagram of the transmission unit provided in the embodiments of this application Figure 2 ; Figure 12 This is a schematic diagram of the structure of the cleaning unit provided in the embodiments of this application; Figure 13 This is a schematic diagram of the structure of the wafer cleaning apparatus provided in the embodiments of this application during its application process; Figure 14 This is a schematic diagram comparing the defect distribution on the wafer surface in the embodiments of this application and related technologies. Detailed Implementation

[0020] Exemplary embodiments of this application will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of this application are shown in the drawings, it should be understood that this application can be implemented in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of this application and to fully convey the scope of this application to those skilled in the art.

[0021] In the following description, numerous details are set forth in order to provide a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, to avoid confusion with this application, some technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0022] In the following description, references are made to “some embodiments,” which describe a subset of all possible embodiments. However, it is understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0023] In the following description, the terms "first," "second," and "third" are used merely to distinguish similar objects and do not represent a specific ordering of objects. It is understood that "first," "second," and "third" may be interchanged in a specific order or sequence where permissible, so that the embodiments of this application described herein can be implemented in an order other than that illustrated or described herein. In the drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0024] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this application.

[0025] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0026] Currently, in the cleaning process following chemical mechanical polishing (CMP), the wafer surface needs to maintain an extremely high level of cleanliness; therefore, it is necessary to minimize the amount of aqueous solution remaining on the wafer surface after cleaning. Specifically, during the process of the cleaning device retrieving and transferring the cleaned wafer, physical contact between the robotic arm and the wafer is unavoidable. In related technologies, due to the material, structure, size, and functional design of the robotic arm, water droplets on the surface of the robotic arm cannot be completely drained, resulting in solution residue on the wafer surface, affecting the cleanliness of the wafer, and causing defects on the wafer surface.

[0027] Based on this, the present application provides a wafer cleaning apparatus; the wafer cleaning apparatus in the present application will be described in detail below with reference to the accompanying drawings.

[0028] This application provides a wafer cleaning apparatus 300. Figure 1 This is a schematic diagram of the structure of the wafer cleaning apparatus 300 provided in the embodiments of this application, as shown below. Figure 1As shown, the wafer cleaning apparatus 300 includes a cleaning unit 310 and a transfer unit 100; the cleaning unit 310 is used to clean the wafer, and the transfer unit 100 is used to transfer the wafer.

[0029] First, please refer to Figure 2 The transmission unit 100 is described below. The transmission unit 100 includes: an arm lever 110, two clamping arms 120, and two clamping heads 130. The arm lever 110 is used for main body support and transmits torque to the two clamping arms 120. The two clamping arms 120 are symmetrically arranged at both ends of the arm lever 110 and are used to open and close under the action of torque. The two clamping heads 130 are respectively arranged at the ends of the two clamping arms 120 away from the arm lever 110 and are used to contact the wafer 200 when clamping it. The water contact angle of the material of the clamping head 130 is greater than 90°, and the clamping head has multiple clamping grooves arranged at intervals and in contact with the wafer. The surface of the clamping grooves has a micro-bump array, which is used to form a microchannel network.

[0030] In this embodiment, the arm lever 110 serves as the main support and can be made of lightweight, high-rigidity materials to improve structural stability; for example, aluminum alloy, carbon fiber composite materials, or ceramics (such as SiC, Al2O3). Furthermore, the arm lever 110 can also be equipped with a drive source (such as a micro motor) and a transmission mechanism; thus, the drive source in the arm lever 110 can control the relative movement of the two clamping arms 120 along a linear direction through the transmission mechanism, realizing the opening and closing of the clamping arms 120; alternatively, the drive source can also control the arm lever 110 to rotate around its axis through the transmission mechanism to adjust the orientation of the clamping arms 120.

[0031] It should be noted that the material of the arm lever 110 and the auxiliary structures therein can be adjusted according to actual needs, and this application does not limit this. For example, an air passage can also be provided in the arm lever 110, extending to the clamping head 130, for achieving vacuum adsorption to assist in clamping the wafer 200; another example is that a sensor can also be provided inside the arm lever 110, extending to the clamping head 130, for detecting the magnitude of the contact force when clamping the wafer 200; and so on. In addition, these auxiliary structures can be set at any suitable position in the arm lever 110 according to actual needs; for example, in the cavity inside the arm lever 110, or any other location that is convenient for processing and functional implementation.

[0032] In this embodiment, two clamping arms 120 are symmetrically arranged at both ends of the arm lever 110, so that when clamping the wafer 200, the clamping force is evenly applied to both sides of the wafer, avoiding wafer displacement, slippage, or damage to the wafer due to uneven force distribution. The opening and closing stroke of the clamping arms 120 can be adjusted according to the size of the wafer 200. Furthermore, the opening and closing method of driving the clamping arms 120 can be flexibly selected according to actual needs; for example, the arm lever 110 can adopt any suitable transmission structure such as a linkage type, cam type, gear and rack type, or linear motor direct drive type.

[0033] In this embodiment, the clamping head 130 is fixed to the end of the clamping arm 120, and its inner surface facing the wafer 200 is the contact working surface. Specifically, when the clamping arm 120 is closed, the inner surfaces of the two clamping heads 130 abut against the edge of the wafer 200 from both sides. In addition, the clamping head 130 can be configured as a detachable structure; for example, it can be connected to the clamping arm 120 by screws, clips, adhesion, or magnetic adsorption, thereby facilitating replacement according to different wafer specifications or its own wear condition.

[0034] In some other embodiments, micro-pores may be provided on the contact surface of the clamping head 130, which are connected to an external vacuum source through the air passage inside the arm 110. In this way, not only can additional holding force be provided through vacuum adsorption, but also residual aqueous solution on the surface of the wafer 200 can be further removed, thereby improving the clamping stability and wafer cleanliness.

[0035] It should be noted that the water contact angle of the clamping head 130 material is greater than 90°, meaning that the material of the clamping head 130 has extremely low surface energy. This gives the clamping head 130 "non-stick" and "superhydrophobic" properties, making it extremely difficult for solutions such as aqueous solutions and cleaning fluids, as well as solid particles, to adhere to its surface. Additionally, in the figure, the X-axis and Y-axis directions are parallel to the horizontal plane, and the Z-axis direction is perpendicular to the horizontal plane.

[0036] In this embodiment, the contact area of ​​the clamping head 130 that clamps the wafer has multiple (e.g., 2, 3, etc.) clamping grooves 140 arranged at intervals and in contact with the wafer; for example, please refer to... Figure 2 The clamping head 130 has two clamping grooves 140 at both ends along the Z-axis. Each clamping groove 140 can be any achievable shape, such as a V-shaped groove, an arc-shaped groove, or a trapezoidal groove. In this way, clamping through multiple clamping grooves can ensure clamping capacity while reducing the number of contact surfaces, thereby reducing wafer contamination.

[0037] Please refer to the embodiments in this application. Figure 3The surface of the clamping groove 140 has an array of microbumps 141, which are used to form a microchannel network. In this way, the contact area between the clamping head 130 (i.e., the clamping groove 140) and the wafer can be further reduced. At the same time, the aqueous solution can be discharged from the microchannel network formed by the microbump array, thereby reducing the accumulation of aqueous solution.

[0038] Here, because the water contact angle of the clamping head 130 material is greater than 90°, meaning the material of the clamping head 130 has hydrophobic properties, the aqueous solution easily slides off the surface of the clamping head 130. Therefore, during the clamping process of the wafer 200, the surface of the clamping head 130 is not only relatively dry, but the aqueous solution between the clamping head 130 and the wafer 200 can also be discharged along the clamping head 130, thus preventing aqueous solution residue on the surface of the wafer 200, improving the cleanliness of the wafer 200 surface, and reducing surface defects. In addition, the clamping groove 140 and its surface microbump array 141 can reduce the contact area between the clamping head 130 and the wafer 200, further reducing the accumulation and residue of aqueous solution; at the same time, the microchannel network formed by the microbump array 141 can discharge the aqueous solution.

[0039] Next, combined Figures 2 to 11 The transmission unit 100 will be described in further detail.

[0040] In some embodiments, please refer to Figure 4 and Figure 5 The clamping head 130 includes a carrier layer 130a, a functional layer 130b, and a contact layer 130c stacked sequentially; the functional layer 130b has a photocatalytic material or an amphiphilic molecular brush for decomposing pollutants and changing local hydrophilicity and hydrophobicity under the excitation of ultraviolet light or thermal energy; the contact layer 130c has a microbump array for contacting the wafer.

[0041] In this embodiment, the contact layer 130c can be constructed on the surface of polytetrafluoroethylene or other polymers (i.e., functional layer 130b) by laser etching, anodizing or chemical vapor deposition to form a composite structure of micron-scale microbumps and nano-scale fibers; in this way, the water contact angle can be stably greater than 150°, achieving superhydrophobicity (Cassie-Baxter state) or even self-cleaning effect.

[0042] The functional layer 130b is incorporating photocatalytic materials (such as TiO2 nanoparticles) or amphiphilic molecular brushes; thus, under the excitation of ultraviolet light or weak heat energy in the cleaning system, organic pollutants are decomposed or the local hydrophilicity or hydrophobicity is changed, achieving "self-cleaning".

[0043] In this embodiment, by setting the clamping head 130 as a load-bearing layer 130a, a functional layer 130b, and a contact layer 130c stacked sequentially, the clamping head 130 has a three-layer gradient material of "structural load-bearing matrix - superhydrophobic functional layer - micro-nano composite structure". Each layer performs its own function, avoiding the contradiction that a single material cannot simultaneously meet the mechanical, morphological, and surface chemical requirements, while improving the mechanical strength, fatigue life, and hydrophobicity of the clamping head 130.

[0044] In some embodiments, please refer to Figure 2 , Figure 4 and Figure 5 The clamping arm 120 and the carrier layer 130a are made of polyether ether ketone (PEEK); the contact layer 130c and the functional layer 130b are made of polytetrafluoroethylene (PTFE), polyimide, and fluoropolymers.

[0045] In this embodiment, when the materials of the clamping arm 120 and the bearing layer 130a are polyetheretherketone (PEEK), on the one hand, PEEK has the characteristics of low particle generation rate and high purity, which can significantly reduce contamination of the wafer; on the other hand, PEEK can be used continuously for a long time at temperatures up to 260°C and has advantages such as high chemical corrosion resistance, which can ensure the stability of performance in wet processes such as wafer cleaning.

[0046] In this embodiment, when the materials of the contact layer 130c and the functional layer 130b are polytetrafluoroethylene (PTFE), on the one hand, PTFE has high chemical corrosion resistance due to its resistance to strong acids, strong alkalis, and organic solvents, thus ensuring performance stability in wet processes such as wafer cleaning; on the other hand, PTFE has extremely low coefficient of friction and surface energy, which not only prevents scratches on the surface of the wafer 200 when the clamping head 130 contacts the wafer 200, but also makes it less likely for the clamping head 130 to adsorb particles and aqueous solutions, thus better maintaining the cleanliness of the wafer 200.

[0047] In this embodiment, when the contact layer 130c and the functional layer 130b are made of polyimide, on the one hand, polyimide can withstand long-term operating temperatures above 300°C and even short-term instantaneous high temperatures exceeding 400°C, thus maintaining excellent mechanical strength at high temperatures and ensuring the reliability and accuracy of clamping at high temperatures. On the other hand, polyimide has low surface energy and is hydrophobic, making it less prone to adsorbing particles and aqueous solutions on the surface of the clamping head 130, thus better maintaining the cleanliness of the wafer 200. Furthermore, the coefficient of friction of polyimide can be adjusted based on additives, thereby reducing wafer scratches while ensuring clamping performance.

[0048] In this embodiment, the materials of the contact layer 130c and the functional layer 130b are fluoropolymers, such as perfluoroalkoxy alkane (PFA), fluorinated ethylene propylene copolymer (FEP), and polyvinylidene fluoride (PVDF). On the one hand, because fluoropolymers have good insulation properties, they can effectively prevent the accumulation and conduction of static electricity, thereby reducing the adhesion of particles on the surface of the wafer 200. On the other hand, because fluoropolymers have extremely low coefficients of friction and surface energy, they not only prevent scratches on the surface of the wafer 200 when the clamping head 130 contacts the wafer 200, but also make it difficult for the surface of the clamping head 130 to adsorb particles and aqueous solutions, thus better maintaining the cleanliness of the wafer 200.

[0049] In this embodiment, materials suitable for the clamping arm 120, the bearing layer 130a, the functional layer 130b, and the contact layer 130c can be selected based on the application scenario of the transmission unit 100.

[0050] In some embodiments, please refer to Figure 4 and Figure 5 The thickness of the contact layer 130c is greater than or equal to 50 nanometers and less than or equal to 5000 nanometers. For example, the thickness of the contact layer 130c can be a value within a range of 50 nanometers, 100 nanometers, 200 nanometers, 500 nanometers, 1000 nanometers, 3000 nanometers, 5000 nanometers, or any combination thereof. This avoids structural instability caused by an excessively thin contact layer 130c, and avoids the contact layer 130c being too thick, which would affect mechanical strength and thermal compatibility.

[0051] In some embodiments, please refer to Figure 4 and Figure 5The ratio of the thickness of the contact layer 130c to the thickness of the functional layer 130b is greater than or equal to 0.1 and less than or equal to 0.3. For example, the ratio of the thickness of the contact layer 130c to the thickness of the functional layer 130b can be a value within a range of 0.1, 0.2, 0.25, 0.3, or any two of these. This ensures that the functional layer 130b, as a modification layer, remains within a suitable thickness range.

[0052] In some embodiments, please refer to Figure 4 and Figure 5 The ratio of the thickness of the support layer 130a to the thickness of the clamping head 130 is greater than 0.9. For example, the ratio of the thickness of the support layer 130a to the thickness of the clamping head 130 is a value within a range of 0.9, 0.95, 0.97, or any two of these. This ensures that the support layer 130a possesses sufficient mechanical properties.

[0053] It should be noted that the thickness mentioned above refers to the average thickness of each layer. Additionally, the micro-bump array can be formed through the contact layer 130c (e.g., Figure 4 (as shown); or, the microbump array can be formed through functional layer 130b (as shown). Figure 5 (As shown); the micro-bump array can be formed through the carrier layer 130a.

[0054] In some embodiments, please refer to Figure 6 The diagram shows a cross-sectional view of the microbump 141. The shape of the microbump 141 in the array is a composite of a truncated cone 141a and a spherical end face 141b. In this way, the side of the truncated cone 141a facilitates the sliding of the solution, and the spherical end face 141b (radius of curvature R) ensures point contact with the wafer, avoiding scratches.

[0055] In some embodiments, please refer to Figure 6 The ratio of the bottom diameter of the truncated cone 141a to the height of the microbump 141 is greater than or equal to 1:1 and less than or equal to 3:1. For example, the ratio of the bottom diameter to the height of the truncated cone 141a can be a value within a range of (1:1), (2:1), (3:1), or any two of these. This ensures that the end face is sufficiently "sharp" to reduce the contact area, but not so sharp as to pierce the water film or damage the wafer.

[0056] In some embodiments, please refer to Figure 6The ratio of the radius of curvature of the spherical end face 141b to the height of the micro-bump 141 is greater than or equal to 1:1.5 and less than or equal to 1:2. For example, the ratio of the radius of curvature of the spherical end face 141b to the height of the micro-bump 141 can be a value within a range of (1:1.5), (1:1.6), (1:1.7), (1:2), or any two of these. This ensures the rigidity of the structure and prevents elastic deformation under clamping force from increasing the contact area.

[0057] In some embodiments, the ratio of the actual contact area between the microbump array 141 and the wafer to the total contact area of ​​the microbump array 141 is greater than or equal to 0.01% and less than or equal to 1%.

[0058] In other words, the total theoretical contact area (ΣA_contact) between all the spherical end faces of the microbumps 141 and the wafer accounts for 0.01% to 1% of the total nominal contact area (A_total) of the clamping head 130. This makes the contact area between the clamping head (or microbumps 141) and the wafer approach zero, thereby reducing the adhesion of aqueous solution. That is, compared to a flat clamping surface tightly attached to the wafer, this application supports the wafer by using the top of the spherical end face 141b in the microbumps 141, so that the total contact area between the top of the spherical end face 141b and the wafer is less than 1% of the entire surface. In this way, although the wafer and the clamping head appear to be "in contact", in reality, most of the area between the wafer and the clamping head is a suspended gap, so the aqueous solution cannot form an adhesive liquid film and can be completely dried under the action of centrifugal force, achieving an ideal state of near "zero contact and zero residue".

[0059] In some embodiments, the distribution density of the microbump array 141 increases from the center of rotation to the periphery. Thus, since the wafer has a higher linear velocity and stronger centrifugal force at the periphery during spin drying, the increasing distribution density of the microbump array 141 from the center to the periphery can utilize the centrifugal force field gradient to optimize the drainage path.

[0060] In some embodiments, the ratio of the distribution density of the micro-protrusions 141 furthest from the rotation center to the distribution density of the micro-protrusions 141 closest to the rotation center is greater than or equal to 1.5 and less than or equal to 3; wherein, the rotation center is the center when the gripping arm rotates, causing the gripping head 130 to rotate. Exemplarily, the ratio of distribution densities can be a value within a range of 1.5, 2.0, 2.5, 3.0, or any two of them; thus, the drainage path is optimized by actively utilizing the centrifugal force field gradient.

[0061] In some embodiments, the bottom of the cross-section of the microchannel network is arc-shaped.

[0062] Specifically, the cross-section of the microchannel is preferably an arc-shaped (semi-circular or parabolic) groove, rather than a rectangle, to eliminate drainage dead zones. Simultaneously, to ensure the fluid reaches a fully developed laminar flow state before the outlet, the hydraulic diameter D of the microchannel is... h The ratio of D to the microchannel length L should satisfy: h / L≤0.05; This ensures that the microchannel has significant capillary pressure, thereby actively "drawing" the solution from the contact area into the microchannel, overcoming fluid inertia, and reducing the adhesion of aqueous solution to the wafer surface. It should be noted that when the microchannel cross-section is an arc-shaped groove, compared to a rectangular groove, this arc-shaped groove will result in a larger hydraulic diameter D of the microchannel. h To increase this ratio, the microchannel length L should be increased or the cross-sectional dimensions should be appropriately optimized.

[0063] Furthermore, the main body of the microchannel can be an Archimedean spiral, and its parametric equation can be defined as: r(θ) = a + b × θ, where r is the distance from the center of rotation, θ is the angle, a is the initial radius (radial distance when θ = 0), and b is the spiral growth rate (i.e., the radial growth rate of the spiral per radian of rotation).

[0064] In addition, the spiral growth rate b must satisfy b=(v_target×t) / (2π), where v_target is the target rotational linear velocity of the wafer at the high-speed spin-rinse dry (SRD) station (a known parameter of the system), and t is the drainage time allowed by the gripper head design. In this way, a rotating centrifugal force field can be used to ensure that the solution is always driven by a centrifugal force component that is approximately parallel to the direction of the flow channel when it moves in the flow channel, thereby maximizing the spin-out efficiency and accurately transporting a small amount of solution from the center to the edge and thoroughly drying it within a specific time.

[0065] Additionally, each or every group of micro-bumps 141 must be located in the upstream inlet region (within 10 μm) of a microchannel, and the angle α between the direction of the line connecting the center of any micro-bump 141 to the nearest microchannel inlet center and the direction of centrifugal force (radially outward) at that point must be ≤15°; for example, the angle can be a value between 15°, 12°, 10°, 8°, 7°, 5°, or any combination thereof. This ensures that the solution, once deflected, is immediately "captured" and enters the drainage channel.

[0066] In summary, by constructing a microchannel network using an array of microbumps 141, the continuous grooves in the related process are eliminated, allowing the contact surface of the clamping head 130 to be designed as an array of microbumps 141 mimicking the shape of a lotus leaf or water strider's leg. Furthermore, the tip of each microbump 141 is spherical or conical, ensuring point contact with the wafer and significantly reducing the contact area, making the contact area between the clamping head 130 and the wafer approach an ideal contact surface. Additionally, calculations are performed on the array distribution, shape, and size of the microbumps 141 to ensure stable and uniform clamping force even with an extremely small contact area (e.g., total area < 0.1 mm²).

[0067] Furthermore, through fluid dynamics simulation optimization, radial or spiral microchannels can be formed between the microbump arrays 141, ensuring that the direction of these microchannels precisely matches the direction of the centrifugal force generated when the wafer rotates at high speed in the SRD (spin-drying) station. When the clamping head 130 contacts the wafer, the solution is "pumped" into these microchannels driven by the superhydrophobic surface and capillary effect. Subsequently, under the action of the centrifugal force generated by the wafer rotation (existing resources within the system), it is quickly and thoroughly thrown away from the contact area, achieving "zero dwell time".

[0068] Furthermore, the clamping head 130 is made of a superhydrophobic (water contact angle >> 90°, such as > 150°) composite material, and the clamping head 130 has a plurality of discrete microbumps 141 or microgrooves with directional flow guidance function in contact with the wafer. Thus, at the moment of clamping, the capillary force generated in the contact area and the low surface energy of the material itself instantly 'absorb' or 'repel' the solution in the contact area, and the solution is completely thrown out of the system by the centrifugal force of the wafer rotation through the preset microchannels. The clamping head itself does not adsorb any particles and achieves self-cleaning after each clamping cycle through the properties of the material itself or environmental energy (such as vibration).

[0069] It should be noted that the structure and material of the clamping head 130 can be the structure and material of the clamping groove 140 (i.e., the subsequent sub-clamping part 132); for example, the clamping groove 140 includes a bearing layer 130a, a functional layer 130b and a contact layer 130c stacked in sequence.

[0070] In some embodiments, please refer to Figure 7 The end of the clamping arm 120 has a first surface A and a second surface B that intersect at an acute angle; the first surface A is the inner sidewall of the clamping arm 120, and the second surface B is the end face of the clamping arm 120; the outer side of the clamping head 130 includes a third surface C and a fourth surface D; the third surface C is attached to the first surface A, and the fourth surface D is tangent to the extension line of the second surface B; the inner side is the side that clamps the wafer 200, and the outer side is the side opposite to the inner side.

[0071] Please refer to the embodiments in this application. Figure 7 Since the end of the clamping arm 120 has a first surface A and a second surface B that intersect at an acute angle, i.e., the end of the clamping arm 120 has a triangular structure, on the one hand, it is convenient to set a groove for fixing the clamping head 130 at the end of the clamping arm 120 to prevent the clamping head 130 from shifting; on the other hand, it is convenient to adjust the angle between the clamping head 130 and the clamping arm 120 according to the size of the wafer, thereby expanding the angle and degree of freedom of rotation of the clamping head 130 along the planes in the X-axis and Y-axis directions.

[0072] For further information, please continue to refer to [link / reference]. Figure 7 Since the third surface C is attached to the first surface A, the clamping head 130 can be fixed to the clamping arm 120 based on the third surface C, and the clamping head 130 is provided with force support when clamping through the third surface C; in addition, since the fourth surface D is tangent to the extension line of the second surface B, the clamping head 130 can be rotated and adjusted towards the wafer side, so as to facilitate rotation to a suitable angle for clamping the wafer.

[0073] In some embodiments, please refer to Figure 7 and Figure 8 The end of the clamping arm 120 also includes a fixing groove 121; the fixing groove 121 is recessed in a direction perpendicular to the clamping arm 120 (e.g., approximately the X-axis direction); the clamping head 130 also extends into the fixing groove 121 and is connected to the clamping arm 120 based on the fixing groove 121.

[0074] In this embodiment, by extending the clamping head 130 into the fixing groove 121 and connecting it to the clamping arm 120 based on the fixing groove 121, the stability of the connection of the clamping head 130 can be improved. Furthermore, the clamping head 130 can be fixed to the end of the clamping arm 120 based on a screw passing through the fixing groove 121 along the Y-axis direction; or, the clamping head 130 can be adhered to the surfaces of the fixing groove 121 and the clamping arm 120 based on adhesive (such as epoxy resin, silicone, etc.).

[0075] In some embodiments, please refer to Figure 9 The ratio of the width D1 of the clamping arm 120 to the width D2 of the clamping head 130 ranges from 0.8 to 1.2.

[0076] In this embodiment, since the clamping head 130 is set independently of the clamping arm 120, a suitable clamping head 130 can be selected based on the size of the clamping wafer, thereby expanding the application range of the transmission unit.

[0077] Furthermore, when the width D1 of the clamping arm 120 is much larger than the width D2 of the clamping head 130, not only does the clamping arm 120 have a larger mass and greater inertia, leading to a decrease in its control performance, but it also easily generates significant stress concentration at the connection between the clamping arm 120 and the clamping head 130. This prevents the clamping force from being evenly distributed on the wafer, potentially damaging it. When the width D1 of the clamping arm 120 is much smaller than the width D2 of the clamping head 130, the clamping arm 120 is extremely prone to bending and deformation, resulting in poor parallelism between the two clamping heads. It also makes it difficult to arrange the air passages or sensor wiring inside the clamping arm 120, limiting functional integration.

[0078] Therefore, the ratio of the width D1 of the gripping arm 120 to the width D2 of the gripping head 130 should be set within a suitable range (i.e., 0.8 to 1.2). This ensures that the gripping arm 120 has sufficient rigidity to drive and stably control the gripping head 130, while preventing excessive inertia or size from affecting dynamic performance. For example, the ratio of width D1 to width D2 can be a value within a range of 0.8, 0.9, 1.0, 1.1, 1.2, or any combination thereof. It should be noted that... Figure 9 This is only used to show the positions of widths D1 and D2; where, Figure 9 Only a structural diagram is shown when the ratio of width D1 to width D2 is greater than 1.0.

[0079] Please refer to the embodiments in this application. Figure 9 The width D1 of the clamping arm 120 can also be any suitable size; wherein, since the wafer is based on the subsequent sub-clamping part 132 (see reference) Figure 10 Therefore, the length and width of the sub-clamping part 132 need to be set within a fixed range. Based on this, the width D1 of the clamping head 130 should not be too wide or too narrow, so that the width D1 of the clamping arm 120 should not be too wide or too narrow.

[0080] For example, the width D1 of the clamping arm 120 can range from 10 mm to 14 mm. Taking a width D1 of 12 mm as an example, the width D2 of the clamping head 130 can range from 9.5 mm to 14.5 mm; exemplaryly, the width D2 of the clamping head 130 can be a value within the range of 9.5 mm, 10.0 mm, 11.0 mm, 12.0 mm, 13 mm, 14.5 mm, or any combination thereof. In this way, while ensuring the rigidity of the clamping arm 120, the clamping head 130 can clamp the wafer.

[0081] It should be noted that due to actual process deviations, the actual dimensions may deviate by approximately ±2 mm; subsequent dimensions also have certain deviations, which can be understood by referring to this section and will not be elaborated further. Additionally, due to the limitations of actual manufacturing precision, the actual manufacturing values ​​of the clamping arm 120 and the clamping head 130 may deviate from the calculated values ​​by approximately ±2 mm. For example, when the ratio of width D1 to width D2 is 0.8 and width D1 is 12 mm, the calculated value of D2 is 9.6 mm, but 9.5 mm can be used in actual manufacturing; subsequent values ​​can also be understood by referring to this section.

[0082] In some embodiments, please refer to Figure 10 The clamping head 130 includes: a sub-connecting portion 131; a plurality of sub-clamping portions 132, which are sequentially disposed on the inner side of the sub-connecting portion 131 along the extending direction of the sub-connecting portion 131; the contact surface between the sub-clamping portion 132 and the wafer 200 is a V-shaped groove, an arc-shaped groove or a trapezoidal groove.

[0083] In this embodiment, the number and position of the sub-clamping parts 132 can be set according to actual needs; for example, the number of sub-clamping parts 132 can be 2, 3, etc. Figure 10 As shown, when there are two sub-clamping parts 132, the two sub-clamping parts 132 can be set at both ends of the sub-connecting part 131 along the Z-axis direction. In this way, while ensuring the clamping capacity, the number of contact surfaces is reduced, thereby reducing wafer contamination.

[0084] In this embodiment, the sub-clamping part 132 can be configured as a V-groove, an arc-shaped groove, or a trapezoidal groove (e.g., depending on the thickness and edge shape of the wafer to be clamped) according to the desired clamping thickness and edge shape. Figure 10 (As shown); this not only clamps the wafer but also allows the aqueous solution to be discharged from the bottom of the groove (i.e., the bottom along the X-axis). It should be noted that this application only shows the sub-clamping part 132 as a trapezoidal groove (as shown). Figure 10 The diagram shows the structure of the V-groove and the arc groove.

[0085] Specifically, for thinner wafers (e.g., less than 100 micrometers thick), an arc-shaped groove clamping portion 132 can be used. This is because the arc-shaped groove forms a smooth surface contact with the wafer edge, with a large contact area, effectively dispersing the clamping force and avoiding stress concentration points, thereby greatly reducing the risk of wafer edge chipping or fragmentation. For thicker wafers (e.g., greater than 300 micrometers thick), a V-shaped groove or a trapezoidal groove (e.g., ...) can be used. Figure 10 The clamping part 132 (as shown) is used because thicker wafers have higher mechanical strength and are less prone to breakage due to stress concentration caused by line contact. Meanwhile, V-grooves or trapezoidal grooves (such as...) Figure 10 (As shown) can provide stable line contact, and can be stably clamped even if the wafer is heavy.

[0086] In some embodiments, please refer to Figure 10 The included angle θ of the sub-clamping part 132 ranges from 80° to 108°.

[0087] In this embodiment, the included angle θ of the sub-clamping portion 132 refers to the included angle between the edges of the sub-clamping portion 132 along the Y-axis direction; for example, when the sub-clamping portion 132 is a trapezoidal groove, the included angle θ is the included angle between the edges of the trapezoidal groove along the Y-axis direction; or, when the sub-clamping portion 132 is an arc-shaped groove, the included angle θ is the included angle between the center tangents of the edges of the arc-shaped groove along the Y-axis direction.

[0088] In this embodiment, when the included angle θ of the sub-clamping portion 132 is too small, the aqueous solution tends to accumulate at the angle and is difficult to slide off; when the included angle θ of the sub-clamping portion 132 is too large, the sub-clamping portion 132 loses its clamping function, making the wafer easy to slip off. Therefore, the included angle θ of the sub-clamping portion 132 should be set within a suitable range (i.e., 80° to 108°). This ensures that the aqueous solution slides off, keeping the sub-clamping portion 132 relatively clean, and also improves the clamping effect of the sub-clamping portion 132. For example, the included angle θ of the clamping portion 132 can be a value between 80°, 90°, 100°, 105°, 107.6°, 108°, or any combination thereof.

[0089] In some embodiments, please refer to Figure 10 The ratio of the width D3 of the sub-clamping part 132 to the width D2 of the clamping head 130 ranges from 0.7 to 1.0; the ratio of the length H1 of the sub-clamping part 132 to the length H2 of the clamping head 130 ranges from 0.11 to 0.25.

[0090] In this embodiment, since the ratio of width D3 to width D2 ranges from 0.7 to 1.0, on the one hand, the width D3 of the sub-clamping portion 132 can be relatively large (close to the width D2 of the clamping head 130). This increases the depth of the clamping portion 132 along the X-axis (e.g., 1 mm, 1.5 mm, etc.) while keeping the included angle θ of the sub-clamping portion 132 constant, thereby facilitating the extraction of the aqueous solution while maintaining clamping capacity. For example, the ratio of width D3 to width D2 can be a value within a range of 0.7, 0.8, 0.9, 1.0, or any combination thereof.

[0091] In some embodiments, please refer to Figure 10 The width D3 of the sub-clamping part 132 ranges from 6.5 mm to 11 mm.

[0092] This ensures that the sub-clamping portion 132 provides sufficient contact area, thereby distributing the clamping force evenly and preventing edge cracking caused by localized stress concentration. For example, the width D3 of the sub-clamping portion 132 can be a value within a range of 6.5 mm, 7.0 mm, 8.0 mm, 9.0 mm, 10 mm, 11 mm, or any combination thereof.

[0093] In this embodiment, when the length H1 of the sub-clamping portion 132 is small, it is insufficient to clamp the wafer; when the length H1 of the sub-clamping portion 132 is large, the aqueous solution is difficult to drain. Therefore, the length H1 of the sub-clamping portion 132 should be set within a suitable range (0.11~0.25). This ensures that the sub-clamping portion 132 can stably clamp the wafer and facilitates the draining of the aqueous solution. For example, the ratio of length H1 to length H2 is a value within a range of 0.11, 0.12, 0.13, 0.15, 0.18, 0.20, 0.23, 0.25, or any combination thereof.

[0094] In this embodiment of the application, taking the length H2 of the clamping head 130 as 90 mm as an example, the length H1 of the sub-clamping part 132 can be a value between 10 mm, 11 mm, 15 mm, 18 mm, 20 mm or any combination thereof.

[0095] In some embodiments, please refer to Figure 10 The width D3 of the sub-clamping part 132 is 9 mm; two sub-clamping parts 132 are disposed at both ends of the sub-connecting part 131, the length H1 of the sub-clamping part 132 is 11 mm, and the included angle θ of the sub-clamping parts 132 is 107.6°; the width D2 of the clamping head 130 is 12 mm. This optimizes the water-guiding and clamping performance of the clamping head 130.

[0096] In the embodiments of this application, please refer to Figure 11 The transmission unit 100 also includes a support frame 150 and a support rod 160 connected between the support frame 150 and the arm 110.

[0097] In the embodiments of this application, please refer to Figure 12 The cleaning unit 310 will be described in detail below. The cleaning unit 310 includes a cleaning stage 311, a moving device 312, and a slide bar 313. The cleaning stage 311 is used to clean the wafer after polishing and other processes, and the moving device 312 is used to move the wafer 200 to the transfer unit 100 under the action of the slide bar 313. It should be noted that, Figure 12 The dashed arrows in the diagram indicate the direction of wafer 200 movement; this is to facilitate understanding of the positions of wafer 200 and moving device 312 in the process steps. Figure 12The image shows three wafers 200 and two moving devices 312. Additionally, Figure 12 This is only used to illustrate the function of each device in the cleaning unit 310 and does not impose specific restrictions on the structure of the devices; for example, a polishing device can also be integrated into the cleaning unit 310.

[0098] Finally, please refer to Figure 13 The application process of the wafer cleaning apparatus 300 is described below. First, the transfer unit 100 moves to the designated station and places the wafer 200 to the moving device 312; next, after the wafer 200 is cleaned, it is taken out again and moved to the next moving device 312; finally, the transfer unit 100 moves to a high-speed rotating cleaning and drying station, and then transfers the wafer 200 back to the wafer pod (FOUP).

[0099] Please refer to Figure 14 This is a schematic diagram of the defect distribution on the wafer surface in the embodiments of this application and related technologies; wherein, Figure 14 The left-middle figure is a schematic diagram of the defect distribution detected on the wafer surface in this application. Figure 14 The right-middle figure is a schematic diagram of the defect distribution detected on the wafer surface in related technologies. As can be seen from the figure, due to the ease with which water accumulates on the transmission unit, defects are found in related technologies ( Figure 14 (Right image) The wafer has two distinct arc-shaped clustered defects on both sides; while in the embodiments of this application ( Figure 14 (Middle left figure) Because the clamping head of the transmission unit has hydrophobic properties, the accumulation of aqueous solution on the surface of the clamping head is reduced, thereby reducing defects on the wafer surface.

[0100] In the several embodiments provided in this application, it should be understood that the disclosed structures and methods can be implemented in a non-target manner. The structural embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods, such as: multiple units or components can be combined, or integrated into another system, or some features can be ignored or not executed. In addition, the various components shown or discussed are coupled to each other or directly coupled.

[0101] The features disclosed in the several method or structural embodiments provided in this application can be arbitrarily combined without conflict to obtain new method or structural embodiments.

[0102] The above are merely some embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the above-described scope.

Claims

1. A wafer cleaning apparatus, characterized in that, include: Cleaning unit and transmission unit; The cleaning unit is used to clean the wafer, and the transmission unit is used to transmit the wafer. The transmission unit includes: The arm bar is used to support the main body and transmit torque to the two clamping arms; The two clamping arms are symmetrically arranged at both ends of the arm lever, and are used to perform opening and closing actions under the action of the torque; Two clamping heads are respectively disposed at the ends of the two clamping arms away from the arm lever, for contacting the wafer when clamping the wafer; The clamping head material has a water contact angle greater than 90°, and the clamping head has multiple clamping grooves spaced apart and in contact with the wafer; the surface of the clamping grooves has a microbump array, which is used to form a microchannel network; the clamping head includes a carrier layer, a functional layer and a contact layer stacked sequentially. The functional layer contains photocatalytic materials or amphiphilic molecular brushes, which are used to decompose pollutants and change local hydrophilicity and hydrophobicity under the excitation of ultraviolet light or thermal energy. The contact layer has the microbump array for contacting the wafer.

2. The apparatus according to claim 1, characterized in that, The micro-bumps in the micro-bump array are shaped like a composite of a truncated cone and a spherical end face; wherein, The ratio of the bottom diameter of the truncated cone to the height of the micro-protrusion is greater than or equal to 1:1 and less than or equal to 3:1; The ratio of the radius of curvature of the spherical end face to the height of the micro-bump is greater than or equal to 1:1.5 and less than or equal to 1:

2.

3. The apparatus according to claim 1, characterized in that, The ratio of the actual contact area between the microbump array and the wafer to the total contact area of ​​all the microbump arrays is greater than or equal to 0.01% and less than or equal to 1%. The distribution density of the micro-bump array increases from the center of rotation outwards.

4. The apparatus according to claim 3, characterized in that, The ratio of the distribution density of the micro-protrusions at the point farthest from the rotation center to the distribution density of the micro-protrusions at the point closest to the rotation center is greater than or equal to 1.5 and less than or equal to 3. The rotation center is the center when the clamping arm rotates, causing the clamping head to rotate.

5. The apparatus according to claim 1, characterized in that, The bottom of the cross-section of the microchannel is arc-shaped, and the parametric equation of the microchannel is D. h / L≤0.05; where, D h Where L is the hydraulic diameter of the microchannel and L is the length of the microchannel; and / or, The angle α between the direction of the line connecting the center of any of the micro-bumps to the nearest center of the microchannel inlet and the direction of the centrifugal force of the micro-bump is ≤15°; and / or, The main body of the microchannel is an Archimedean spiral, and the parametric equation of the Archimedean spiral is r(θ) = a + b × θ; where r is the distance from the center of rotation, θ is the angle, a is the initial radius, and b is the spiral growth rate.

6. The apparatus according to claim 1, characterized in that, The materials of the clamping arm and the bearing layer include polyetheretherketone; The materials of the contact layer and the functional layer include polytetrafluoroethylene, polyimide, and fluoropolymers.

7. The apparatus according to claim 1, characterized in that, The thickness of the contact layer is greater than or equal to 50 nanometers and less than or equal to 5000 nanometers; The ratio of the contact layer thickness to the functional layer thickness is greater than or equal to 0.1 and less than or equal to 0.

3. The ratio of the thickness of the bearing layer to the thickness of the clamping head is greater than 0.

9.

8. The apparatus according to claim 1, characterized in that, The end of the clamping arm has a first surface and a second surface that intersect at an acute angle; the first surface is the inner sidewall of the clamping arm, and the second surface is the end face of the clamping arm. The outer side of the clamping head includes a third surface and a fourth surface; the third surface is attached to the first surface, and the fourth surface is tangent to the extension line of the second surface; the inner side is the side that clamps the wafer, and the outer side is the side opposite to the inner side.

9. The apparatus according to claim 2, characterized in that, The end of the clamping arm also includes a fixing groove; the fixing groove is recessed in a direction perpendicular to the clamping arm; The clamping head also extends into the fixing groove and is connected to the clamping arm based on the fixing groove.

10. The apparatus according to claim 1, characterized in that, The ratio of the width of the clamping arm to the width of the clamping head ranges from 0.8 to 1.

2.

11. The apparatus according to claim 1, characterized in that, The clamping head includes: Sub-connection section; Multiple sub-clamping portions are sequentially disposed on the inner side of the sub-connecting portion along the extending direction of the sub-connecting portion; the clamping groove serves as the sub-clamping portion, and the contact surface between the sub-clamping portion and the wafer is a V-shaped groove, an arc-shaped groove, or a trapezoidal groove.

12. The apparatus according to claim 11, characterized in that, The included angle of the sub-clamping part ranges from 80° to 108°; The ratio of the width of the sub-clamping part to the width of the clamping head ranges from 0.7 to 1.

0. The ratio of the length of the sub-clamping part to the length of the clamping head ranges from 0.11 to 0.

25.

13. The apparatus according to claim 12, characterized in that, The width of the sub-clamping part ranges from 6.5 mm to 11 mm.

14. The apparatus according to claim 12 or 13, characterized in that, The clamping head includes two sub-clamping portions disposed at both ends of the sub-connecting portion; The width of the sub-clamping part is 9 mm, the length of the sub-clamping part is 11 mm, and the included angle of the sub-clamping part is 107.6°; the width of the clamping head is 12 mm.

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