Substrate and method for manufacturing the same

Abstract

A substrate includes a first TGV unit and a second TGV unit. The second TGV unit is bonded to the first TGV unit. The first TGV unit is electrically connected to the second TGV unit, and a direct bonding interface between the first TGV unit and the second TGV unit includes a glass-to-glass bonding interface and a metal-to-metal bonding interface. A method of fabricating the substrate is also provided.

Description

Technical Field

[0001] This invention relates to a substrate and a method for manufacturing the same. Background Technology

[0002] To meet the demands of products for better applications, substrate design has become a challenge for researchers in this field. For example, improving the aspect ratio of the substrate at the edges (vias) is an important issue. Summary of the Invention

[0003] This disclosure provides a substrate and a method for manufacturing the same, which can improve the aspect ratio problem.

[0004] The glass substrate includes a first TGV (through glass via) unit and a second TGV unit. The second TGV unit is bonded to the first TGV unit. The first TGV unit is electrically connected to the second TGV unit, and the direct bonding interface between the first TGV unit and the second TGV unit includes a glass-to-glass bonding interface and a metal-to-metal bonding interface.

[0005] The method for manufacturing a substrate includes: providing a first TGV unit and a second TGV unit; connecting the first TGV unit and the second TGV unit; and performing a thermo-press bonding process to directly bond the first TGV unit and the second TGV unit to each other.

[0006] Based on the above, in this disclosure, by assembling two separate TGV units into the core layer of a substrate, a high aspect ratio can be achieved, thus overcoming the challenging problem of achieving a high aspect ratio. Accordingly, this will improve the yield and electrical performance of the substrate in subsequent applications.

[0007] To make the above disclosure easier to understand, several embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0008] The drawings are provided to further understand this disclosure and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of this disclosure and are used in conjunction with the text to explain the principles of this disclosure.

[0009] Figures 1 to 8 A partial cross-sectional schematic diagram showing a method for manufacturing a substrate according to some embodiments of the present disclosure.

[0010] Figure 9 This is a top view schematic diagram of the portion where a first conductive connector and a second conductive connector are joined according to some embodiments of this disclosure.

[0011] Figures 10 to 16A partial cross-sectional schematic diagram showing a method for manufacturing a substrate according to some embodiments of the present disclosure.

[0012] Figures 17 to 19 A partial cross-sectional schematic diagram showing a method for manufacturing a substrate according to some embodiments of the present disclosure.

[0013] Figures 20 to 22 A partial top view schematic diagram showing a method for manufacturing a substrate according to some embodiments of the present disclosure.

[0014] Figures 23 to 28 A partial cross-sectional schematic diagram showing the application of a substrate according to some embodiments of the present disclosure. Detailed Implementation

[0015] The exemplary embodiments of this disclosure will be fully described below with reference to the accompanying drawings. However, this disclosure may be implemented in many different forms and should not be construed as limited to the embodiments described herein. In the drawings, for clarity, the size and thickness of regions, parts, and layers may not be drawn to scale. For ease of understanding, the same elements will be indicated by the same symbols in the following description.

[0016] This disclosure is illustrated with reference to the drawings of this embodiment for a more complete explanation. However, this disclosure may be embodied in various different forms and should not be limited to the embodiments described herein. The thickness, dimensions, or sizes of layers or regions in the drawings are enlarged for clarity. Identical or similar reference numerals denote identical or similar elements, which will not be repeated in the following paragraphs.

[0017] The directional terms used in this article (e.g., up, down, right, left, front, back, top, bottom) are used for reference only and are not intended to imply absolute orientation.

[0018] It should be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part.

[0019] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains.

[0020] Unless otherwise stated, the term "range between" used in the specification to define numerical ranges is intended to cover the range equal to and between the endpoint values. For example, a size range from a first value to a second value means that the size range can cover the first value, the second value, and any value between the first value and the second value.

[0021] Figures 1 to 8 A partial cross-sectional schematic diagram showing a method for manufacturing a substrate according to some embodiments of the present disclosure. Figure 9 A top view schematic diagram showing a portion of the engagement between a first conductive connector and a second conductive connector according to some embodiments of the present disclosure.

[0022] Due to their material properties, glass has a higher glass transition temperature (Tg) than organic materials. Therefore, glass core substrates can be processed and operated at higher temperatures. For example, organic core substrates may only be operable at temperatures below 250°C, while glass core substrates can operate above 400°C. Furthermore, the presence of glass fibers, fillers, etc., in organic core substrates results in an uneven surface, making it very challenging to fabricate fine lines on top of organic substrates, especially below 10 micrometers. In contrast, the surface roughness (Ra) of glass can be smoothed to several nanometers, making it possible to fabricate fine lines on top of glass core substrates. Additionally, organic core substrates may be limited to a size of approximately 500 mm, while glass core substrates may be cost-effective for larger-scale processes. In some embodiments, glass core substrates with a large size of 1000 mm are feasible. Based on these advantages, glass layers (non-organic core substrates) are more competitive.

[0023] Please refer to Figure 1 First, a glass layer 101 is provided. Then, a portion of the glass layer 101 is removed to form a plurality of through-holes 102. For example, the top surface 101t and the bottom surface 101b of the glass layer 101 are penetrated by the through-holes 102. In some embodiments, the removal process is performed by laser modification and chemical etching using an etchant, wherein the etchant includes hydrofluoric acid or the like, but this disclosure is not limited thereto, and other suitable processes may be used.

[0024] Please refer to Figure 2 A plurality of conductive connectors 103 are formed in the via 102 and on the glass layer 101. In some embodiments, the conductive connectors 103 may be formed by a first seed layer process, such as sputtering, atomic layer deposition, or electroless copper seed layer or the like. Then, the via 102 is filled by electroless copper plating. Furthermore, the conductive connectors 103 may protrude to the outside from the top surface 101t and the bottom surface 101b of the glass layer 101, respectively, to ensure that the entire space in the via 102 is filled with the conductive material of the conductive connectors 103, thereby improving electrical performance, but this disclosure is not limited thereto.

[0025] In some embodiments, an additional titanium (Ti) seed layer (not shown) may be formed by a seed layer process before the conductive connector 103 is formed, but this disclosure is not limited thereto.

[0026] Please refer to Figure 3 A planarization process, such as chemical mechanical polishing (CMP) or similar, is performed on the glass layer 101 and the conductive connector 103, thereby improving the flatness of the bonding surface 104 (e.g., configured by the top surface 101t of the glass layer 101 and the top surface 103t of the conductive connector 103). The top surface 101t of the glass layer 101 and the top surface 103t of the conductive connector 103 can be coplanar, and the bottom surface 101b of the glass layer 101 and the bottom surface 103b of the conductive connector 103 can also be coplanar after the planarization process. By doing so, the subsequent bonding quality can be improved. In an embodiment not shown, the bonding surface 104 can be configured by the bottom surface 101b of the glass layer 101 and the bottom surface 103b of the conductive connector 103.

[0027] Following the above manufacturing process, the through-glass via (TGV) unit 100 of this embodiment, including the glass layer 101 and the conductive connector 103, is substantially completed. Here, the length 103L of each conductive connector 103 may be approximately 500 micrometers (μm) or other suitable values, but this disclosure is not limited thereto.

[0028] Please refer to Figure 4 For clarity, two TGV units 100 are provided. The top TGV unit 100 may be referred to as the first TGV unit 100A, and the bottom TGV unit 100 may be referred to as the second TGV unit 100B. Similarly, the top glass layer 101 may be referred to as the first glass layer 101A, and the bottom glass layer 101 may be referred to as the second glass layer 101B. Furthermore, the top set of two sets of conductive connectors 103 may be referred to as the first conductive connector 103A, and the bottom set of two sets of conductive connectors 103 may be referred to as the second conductive connector 103B. Here, the first TGV unit 100A and the second TGV unit 100B are both of the entire through-via type.

[0029] exist Figure 4 In this configuration, a first TGV unit 100A and a second TGV unit 100B are connected (at room temperature), and a top support block 105A can be disposed on the first TGV unit 100A, and a bottom support block 105B can be disposed on the second TGV unit 100B, such that the first TGV unit 100A and the second TGV unit 100B are centrally located between the top support block 105A and the bottom support block 105B to further ensure flatness in subsequent bonding processes. In some embodiments, the top support block 105A and the bottom support block 105B can be metal blocks or the like.

[0030] Please refer to Figure 4 The first TGV unit 100A and the second TGV unit 100B are aligned in the orthogonal projection direction 106 with the alignment accuracy of the joining tool. For example, the first conductive connector 103A and the second conductive connector 103B that are opposite each other may not completely overlap, and the first joining surface 104A of the first TGV unit 100A and the second joining surface 104B of the second TGV unit 100B may be laterally offset, but this disclosure is not limited thereto.

[0031] Please refer to Figure 5 After the first unit 100A and the second unit 100B are connected, a thermal compression bonding process is performed. For example, during the thermal compression bonding process, the first conductive connector 103A and the second conductive connector 103B are subjected to... Figure 5 The heat and pressure indicated by the arrows cause the first conductive connector 103A to protrude from the first glass layer 101A toward the second TGV unit 100B, and the second conductive connector 103B to protrude from the second glass layer 101B toward the first TGV unit 100A, while a gap G is formed between the first glass layer 101A and the second glass layer 101B.

[0032] In some embodiments, compared to an organic core substrate, the hot-press bonding process can operate at temperatures ranging from 250°C to 500°C and / or at pressures ranging from 1 atm to 10 atm due to the high glass transition temperature (Tg) of the conductive connectors and glass layers. Furthermore, the hot-press bonding process can be performed in an oxygen-free environment to avoid other defects, but this disclosure is not limited thereto.

[0033] In some embodiments, the different coefficients of thermal expansion (CTE) between the first conductive connector 103A and the first glass layer 101A may result in a first exposure length LA for each first conductive connector 103A, and the different coefficients of thermal expansion between the second conductive connector 103B and the second glass layer 101B may result in a second exposure length LB for each second conductive connector 103B.

[0034] In this embodiment, since the material of the first conductive connector 103A is the same as that of the second conductive connector 103B, the first exposure length LA can be substantially the same as the second exposure length LB. For example, when the operating temperature is 425°C, the first exposure length LA and the second exposure length LB can each be 2.8 micrometers, but this disclosure is not limited thereto.

[0035] In some embodiments, the length of the embedded portion of the first conductive connector 103A located in the first glass layer 101A is equal to the length of the embedded portion of the second conductive connector 103B located in the second glass layer 101B. Figure 3 The length 103L is the same, but this disclosure is not limited thereto.

[0036] Please refer to Figure 6 After the thermo-press bonding process, the first TGV unit 100A and the second TGV unit 100B are directly bonded to each other. Therefore, the first TGV unit 100A is electrically connected to the second TGV unit 100B, and the direct bonding interface 107 includes a glass-to-glass bonding interface 107g and a metal-to-metal bonding interface 107m located between the first TGV unit 100A and the second TGV unit 100B. Here, high temperature promotes the bonding of the two glass layers (first glass layer 101A and second glass layer 101B) and the bonding of the two conductive connectors (first conductive connector 103A and second conductive connector 103B).

[0037] For example, the first conductive connector 103A and the second conductive connector 103B are squeezed and flowed to the surface of the first glass layer 101A and the surface of the second glass layer 101B during the hot pressing bonding process, thereby deforming the first conductive connector 103A and the second conductive connector 103B to form a metallurgical bonding in the orthogonal projection direction 106.

[0038] exist Figure 6 In this configuration, each first conductive connector 103A includes a first enlarged portion EA and a first columnar portion PA, and each second conductive connector 103B includes a second enlarged portion EB and a second columnar portion PB. In this manner, the direct bonding interface 107 is configured with the first enlarged portion EA, the first glass layer 101A, the second enlarged portion EB, and the second glass layer 101B. That is, the first glass layer 101A and the second glass layer 101B are in direct contact, and the first enlarged portion EA and the second enlarged portion EB are in direct contact.

[0039] In some embodiments, the first enlarged portion EA gradually increases in the direction toward the direct engagement interface 107, and the second enlarged portion EB gradually increases in the direction toward the direct engagement interface 107, such that the size of the first enlarged portion EA is greater than the size of the first columnar portion PA, and the size of the second enlarged portion EB is greater than the size of the second columnar portion PB.

[0040] Furthermore, after the bonding process, the first columnar portion PA and the second columnar portion PB, which are opposite each other, do not completely overlap. Therefore, the bonding area (overlapping and non-overlapping area) between the first TGV unit 100 and the second TGV unit 200 is larger than the diameter D1 of the first columnar portion PA or the diameter D2 of the second columnar portion PB. Figure 9 As shown.

[0041] Please refer to Figure 7 After joining the first TGV unit 100A and the second TGV unit 100B, the top support block 105A and the bottom support block 105B can be removed by a suitable process. Then, a laser beam welding process LS is performed on the glass-to-glass bonding interface 107g of the direct bonding interface 107. By doing so, the bonding strength between the first glass layer 101A and the second glass layer 101B can be further improved. Here, the details of the laser beam welding process LS can be determined according to actual design requirements, and this disclosure is not limited thereto.

[0042] Following the aforementioned manufacturing process, the core layer 110, comprising the first TGV unit 100A and the second TGV unit 100B, is substantially completed. Accordingly, by assembling two separate TGV units into the core layer 110 of the substrate, a higher aspect ratio can be achieved, thereby improving the aspect ratio issue. This, in turn, improves the yield and electrical performance of the substrate in subsequent applications. Here, the aspect ratio of the core layer 110 is the length of the conductive connector divided by the diameter of the conductive connector (aspect ratio = L / D).

[0043] Please refer to Figure 8 A first circuit structure 120 is formed on the top surface 111 of the core layer 110, and a second circuit structure 130 is formed on the bottom surface 112 of the core layer 110 to form a substrate S1. The first circuit structure 120 and the second circuit structure 130 are disposed on two opposite sides of the core layer 110, and conductive connectors 103A and 103B can provide a vertical conductive path between the first circuit structure 120 and the second circuit structure 130. Figure 8 In the middle, the core layer 110 is thicker than the first circuit structure 120 and the second circuit structure 130.

[0044] like Figure 8As shown in the enlarged portion, the first circuit structure 120 and the second circuit structure 130 can be referred to as redistribution structures or build-up structures, which include dielectric layers and conductive layers. For example, a plurality of first dielectric layers 121 of the first circuit structure 120 and a plurality of second dielectric layers 131 of the second circuit structure 130 are formed by depositing a dielectric material (e.g., ABF, PP, or the like) on a core layer 110 where a conductive layer (e.g., copper or the like) has been formed, and a plurality of first conductive layers 122 of the first circuit structure 120 and a plurality of second conductive layers 132 of the second circuit structure 130 are formed on the first dielectric layers 121 and the second dielectric layers 131, respectively. In the build-up structures, the dielectric layers (e.g., 121, 131) insulate the conductive layers (e.g., 122, 132) from the conductive traces beneath the dielectric layers (e.g., 121, 131). Here, the first circuit structure 120 and the second circuit structure 130 can be formed by suitable processes (e.g., photolithography, etching or the like), and this disclosure is not limited thereto.

[0045] It should be noted that, for clarity, the above detailed explanation may not be included. Figure 24 As shown in the image, all of the above content is incorporated into Figure 24 It is in the middle and becomes part of the diagram.

[0046] In some embodiments, the conductive elements (e.g., conductive patterns, conductive vias, conductive lines, or conductive pads) of the first conductive layer 122 are finer than the conductive elements (e.g., conductive patterns, conductive vias, conductive lines, or conductive pads) of the second conductive layer 132, so that the chip can be bonded to the first circuit structure 120 and external terminals can be bonded to the second circuit structure 130 (not shown), but this disclosure is not limited thereto. In some embodiments, the contact density of the first circuit structure 120 is denser than the contact density of the second circuit structure 130, but this disclosure is not limited thereto.

[0047] It must be noted that the following embodiments use the component references and some contents of the above embodiments, wherein the same or similar references are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to the foregoing embodiments. The following embodiments will not repeat the description.

[0048] Figures 10 to 16 A partial cross-sectional schematic diagram of a method for manufacturing a substrate according to some embodiments of the present disclosure is shown, wherein this embodiment is another method for manufacturing the core layer 110 of the substrate S1.

[0049] Please refer to Figure 10 Similar to Figure 1 , Figure 10Structure and Figure 1 The structural difference lies in that the top surface 201t and bottom surface 201b of the glass layer 201 are not completely penetrated by the through-hole 202. For example, the through-hole 202 does not extend to the bottom surface 201b of the glass layer 201, so that the first TGV unit 200A and the second TGV unit 200B can be partially penetrated through-holes, respectively.

[0050] Please refer to Figure 11 Similar to Figure 2 , Figure 11 Structure and Figure 2 The structural difference is that the conductive connector 203 protrudes only from the top surface 201t of the glass layer 201, and the bottom surface 203b of the conductive connector 203 can be surrounded by the glass layer 201.

[0051] Please refer to Figure 12 Similar to Figure 3 , Figure 12 Structure and Figure 3 The structural difference is that the planarization process is only performed on the top surface 201t of the glass layer 201 and the top surface 203t of the conductive connector 203, so that the top surface 201t of the glass layer 201 and the top surface 203t of the conductive connector 203 can be coplanar, and the bottom surface 201b of the glass layer 201 and the bottom surface 203b of the conductive connector 203 can be non-coplanar.

[0052] Please refer to Figures 13 to 15 Similar to Figures 4 to 6 , Figures 13 to 15 Structure and Figures 4 to 6 The structural difference lies in the following: Two TGV units 200 are provided, wherein the top TGV unit 200 can be referred to as the first TGV unit 200A and the bottom TGV unit 200 can be referred to as the second TGV unit 200B. Furthermore, the top glass layer 201 can be referred to as the first glass layer 201A and the bottom glass layer 201 can be referred to as the second glass layer 201B. Additionally, the top set of two sets of conductive connectors 203 can be referred to as the first conductive connector 203A and the bottom set of two sets of conductive connectors 203 can be referred to as the second conductive connector 203B. Furthermore, the top support block 105A and the bottom support block 105B may not be in direct contact with the first conductive connector 203A and the second conductive connector 203B.

[0053] After the thermocompression bonding process, the first TGV unit 200A and the second TGV unit 200B are directly bonded to each other. Therefore, the first TGV unit 200A is electrically connected to the second TGV unit 200B, and a direct bonding interface 107, including a glass-to-glass bonding interface 107g and a metal-to-metal bonding interface 107m, is located between the first TGV unit 200A and the second TGV unit 200B. Figure 15 As shown.

[0054] Please refer to Figure 16 Similar to Figure 7 , Figure 16 Structure and Figure 7 The structural difference lies in that after removing the top support block 105A and the bottom support block 105B, the first conductive connector 203A and the second conductive connector 203B are not exposed. Therefore, a thinning process is performed to expose the first conductive connector 203A and the second conductive connector 203B, forming a structure as shown below. Figure 7 The core layer 110 structure is shown. Accordingly, by assembling two separate TGV units into the core layer 110 of the substrate, a high aspect ratio can be achieved, thus improving aspect ratio issues. This will have a positive impact on yield and electrical performance in subsequent applications of the substrate.

[0055] Figures 17 to 19 A partial cross-sectional schematic diagram showing a method for manufacturing a substrate according to some embodiments of the present disclosure. Figures 20 to 22 A partial top view schematic diagram of a method for manufacturing a substrate according to some embodiments of the present disclosure is shown, wherein Figure 20 Corresponding to Figure 17 , Figure 21 Corresponding to Figure 18 ,and Figure 22 Corresponding to Figure 19 . Figure 23 and Figure 24 A partial cross-sectional schematic diagram showing the application of a substrate according to some embodiments of the present disclosure.

[0056] Please refer to Figure 17 , Figure 18 , Figure 21 and Figure 22 The system provides a first TGV unit 300A and a second TGV unit 300B. The first TGV unit 300A includes a first glass layer 301A, a fine-pitch portion 303AF, and a first coarse-pitch portion 303AC, wherein the glass layer 301A is penetrated by the fine-pitch portion 303AF and the first coarse-pitch portion 303AC. Conversely, the second TGV unit 300B includes a second glass layer 301B, a second coarse-pitch portion 303B, and a cavity 308, wherein the second glass layer 301B is penetrated by the second coarse-pitch portion 303B and the cavity 308.

[0057] Fine-pitch portions 303AF are formed between and surrounded by first coarse-pitch portions 303AC. The fine-pitch portions 303AF include fine conductive connectors, and the first coarse-pitch portions 303AC include first coarse conductive connectors. For example, the spacing P1 between adjacent fine conductive connectors is smaller than the spacing P2 between adjacent first coarse conductive connectors. Figure 17 and Figure 20 As shown.

[0058] Furthermore, a cavity 308 is formed between and surrounded by the second coarse-pitched portions 303B, and the second coarse-pitched portions 303B include second coarse conductive connectors. For example, the spacing P3 between adjacent second coarse conductive connectors is similar to the spacing P2 between adjacent first coarse conductive connectors, such as... Figure 18 and Figure 21 As shown. By doing so, the substrate can have further integration and application flexibility.

[0059] Please refer to Figure 19 Similar to Figures 4 to 7 The first unit 300A and the second unit 300B are connected. Then, a thermocompression bonding process is performed. Furthermore, after the thermocompression bonding process, the first TGV unit 300A and the second TGV unit 300B are directly bonded to each other, thus the first TGV unit 300A is electrically connected to the second TGV unit 300B. In addition, a laser beam welding process is performed on the glass-to-glass bonding interface of the direct bonding interface 107. Figure 19 Structure and Figure 7 The structural difference is that the first coarse pitch portion 303AC is in direct contact with the second coarse pitch portion 303B, and the fine pitch portion 303AF is exposed by the cavity 308.

[0060] Following the aforementioned manufacturing process, the core layer 310, comprising the first TGV unit 300A and the second TGV unit 300B, is substantially completed. Accordingly, by assembling two separate TGV units into the core layer 310 of the substrate, a high aspect ratio can be achieved, thus improving aspect ratio issues. This will have a positive impact on yield and electrical performance in subsequent applications of the substrate. Here, the aspect ratio of the core layer 310 is the length of the conductive connector divided by the diameter of the conductive connector.

[0061] It should be noted that the above embodiments illustrate the junction patterns of multiple identical TGV units, such as... Figures 1 to 16 As shown, however, in other embodiments, the thickness and internal circuit design of the TGV unit may differ; for example, the thickness of the first TGV unit 300A may be less than the thickness of the second TGV unit 300B. Figures 17 to 20 As shown.

[0062] Please refer to Figure 23 The first TGV unit 300A is configured to house the first chip 340, and the second TGV unit 300B is configured to house the second chip 350, with the first chip 340 facing the second chip 350. Furthermore, a plurality of external terminals 360 are formed on the second TGV unit 300B. Here, the second chip 350 can be a memory, a stacked memory, or a vertical power supply module.

[0063] For example, the first chip 340 has different bumps 341 and 342 with different pitches, and the different pitches may correspond to a fine pitch portion 303AF and a first coarse pitch portion 303AC. In addition, the second chip 350 may be located in the cavity 308 and may correspond to the fine pitch portion 303AF, such that the first chip 340 is electrically connected to the second chip 350 through the fine pitch portion 303AF.

[0064] Please refer to Figure 24 Similar to Figure 23 , Figure 24 Structure and Figure 23 The difference in structure is that the first circuit structure 120 is formed between the first chip 340 and the first TGV unit 300A of the substrate.

[0065] Please refer to Figure 25 Similar to Figure 23 , Figure 25 Structure and Figure 23 The structural difference lies in the following: the first TGV unit 300A has another cavity 308, and the first component 371 (e.g., a capacitor or inductor) is disposed within the cavity 308 of the first TGV unit 300A, wherein the first component 371 is electrically connected to the first chip 340. Furthermore, the second TGV unit 300B has two additional cavities 308 in the second coarse-pitch portion 303B, and the second component 372 (e.g., an integrated voltage regulator) and the third component 373 (e.g., a co-packaged optical module, CPO) are respectively disposed within the cavities 308, wherein the second component 372 and the third component 373 are respectively electrically connected to the first coarse-pitch portion 303AC.

[0066] Please refer to Figure 26 Similar to Figure 25 , Figure 26 Structure and Figure 25 The difference in structure is that the first circuit structure 120 is formed between the first chip 340 and the first TGV unit 300A of the substrate.

[0067] Please refer to Figure 27 Similar to Figure 25 , Figure 27 Structure and Figure 25 The structural difference lies in that the first chip 340 can be replaced by two independent chips 340A and 340B. Furthermore, the second chip 350 can be a bridging die to connect chips 340A and 340B; in this case, the bridging die can be a suitable passive or active component. In this embodiment, Figure 26 The structure is a bridge die-last solution.

[0068] Please refer to Figure 28 Similar to Figure 27 , Figure 28 Structure and Figure 27 The difference in structure is that the first circuit structure 120 is formed between the chips 340A, 340B and the first TGV unit 300A of the substrate.

[0069] In summary, this disclosure demonstrates that assembling two separate TGV units into the core layer of a substrate allows for a high aspect ratio, thus improving aspect ratio performance. This, in turn, will positively impact the yield and electrical performance of the substrate in subsequent applications.

[0070] To those skilled in the art, various modifications and variations can be made to the disclosed embodiments without departing from the scope or spirit of this disclosure. In view of the foregoing, this disclosure is intended to cover modifications and variations falling within the scope of the foregoing claims and their equivalents.

Claims

1. A substrate, characterized in that, include: First glass through-hole unit; as well as A second glass through-hole unit is joined to the first glass through-hole unit, wherein the first glass through-hole unit is electrically connected to the second glass through-hole unit, and the direct bonding interface between the first glass through-hole unit and the second glass through-hole unit includes a glass-to-glass bonding interface and a metal-to-metal bonding interface.

2. The substrate according to claim 1, characterized in that, The first glass through-hole unit and the second glass through-hole unit have alignment offset in the orthogonal projection direction.

3. The substrate according to claim 1, characterized in that: The first glass through-hole unit includes a plurality of first conductive connectors and a first glass layer penetrated by the plurality of first conductive connectors; The second glass through-hole unit includes a plurality of second conductive connectors and a second glass layer penetrated by the plurality of second conductive connectors; and The direct bonding interface is configured with the plurality of first conductive connectors, the first glass layer, the plurality of second conductive connectors, and the second glass layer.

4. The substrate according to claim 3, characterized in that: Each of the plurality of first conductive connectors includes a first enlarged portion and a first columnar portion; Each of the plurality of second conductive connectors includes a second enlarged portion and a second columnar portion; The first glass layer is in direct contact with the second glass layer; as well as The first enlarged portion of the first conductive connector directly contacts the second enlarged portion of the second conductive connector.

5. The substrate according to claim 4, characterized in that: The first enlarged portion gradually increases in the direction toward the direct engagement interface; and The second enlarged portion gradually increases in the direction toward the direct engagement interface.

6. The substrate according to claim 4, characterized in that, The first columnar portion and the second columnar portion, which are opposite to each other, do not completely overlap.

7. The substrate according to claim 4, characterized in that, The joint area between the first glass through-hole unit and the second glass through-hole unit is greater than the diameter of the first columnar portion or the diameter of the second columnar portion.

8. The substrate according to claim 1, characterized in that: The first glass through-hole unit includes a fine-pitch portion and a first coarse-pitch portion; The second glass through-hole unit includes a second coarse-pitch portion; and The first coarse-pitch portion directly contacts the second coarse-pitch portion.

9. The substrate according to claim 8, characterized in that, The thickness of the first glass through-hole unit is less than the thickness of the second glass through-hole unit.

10. The substrate according to claim 8, characterized in that, The second glass through-hole unit includes a cavity, and the fine-pitch portion is exposed through the cavity.

11. The substrate according to claim 1, characterized in that: The first glass via unit is configured to house the first chip; The second glass via unit is configured to house the second chip; and The first chip faces the second chip.

12. The substrate according to claim 1, characterized in that, The first glass via unit and the second glass via unit are assembled to form the core layer of the substrate, and the substrate further includes: A first circuit structure is disposed on the top surface of the core layer; and The second circuit structure is located on the bottom surface of the core layer.

13. The substrate according to claim 1, characterized in that, One of the first glass through-hole unit and the second glass through-hole unit includes a fine-pitch portion and a first-pitch portion.

14. The substrate according to claim 1, characterized in that, One of the first TGV unit and the second TGV unit includes multiple cavities.

15. The substrate according to claim 14, characterized in that, The substrate further includes: bridging grains disposed within one of the plurality of cavities.

16. A method for manufacturing a substrate, characterized in that, include: Provide a first glass through-hole unit and a second glass through-hole unit; Connect the first glass through-hole unit and the second glass through-hole unit; as well as A hot-press bonding process is performed to directly bond the first glass through-hole unit and the second glass through-hole unit to each other.

17. The method for manufacturing a substrate according to claim 16, characterized in that, The operating temperature range of the hot-pressing bonding process is between 250°C and 500°C, and the operating pressure range of the hot-pressing bonding process is between 1 atm and 10 atm.

18. The method for manufacturing a substrate according to claim 16, characterized in that, The hot-pressing process is performed in an oxygen-free environment.

19. The method for manufacturing a substrate according to claim 16, characterized in that, Before connecting the first glass through-hole unit and the second glass through-hole unit, the first glass through-hole unit and the second glass through-hole unit are either fully through-hole type or partially through-hole type, respectively.

20. The method for manufacturing a substrate according to claim 16, characterized in that: The first glass through-hole unit includes a plurality of first conductive connectors and a first glass layer penetrated by the plurality of first conductive connectors; The second glass through-hole unit includes a plurality of second conductive connectors and a second glass layer penetrated by the plurality of second conductive connectors; The plurality of first conductive connectors protrude from the first glass layer toward the second glass through-hole unit during the hot-press bonding process; as well as The plurality of second conductive connectors protrude from the second glass layer toward the first glass through-hole unit during the hot-press bonding process.

21. The method of manufacturing a substrate according to claim 20, wherein the first conductive connector and the second conductive connector are extruded and flowed to the surface of the first glass layer and the surface of the second glass layer during the thermo-pressing bonding process.

22. The method of manufacturing a substrate according to claim 20, wherein after performing the hot-press bonding process, a laser beam welding process is performed on the bonding interface between the first glass layer and the second glass layer.

23. The method of manufacturing a substrate according to claim 20, wherein before connecting the first glass via unit and the second glass via unit, a planarization process is performed on the first glass via unit and the second glass via unit respectively.

24. The method of manufacturing a substrate according to claim 20, wherein the first conductive connector and the second conductive connector are not fully aligned during the thermo-press bonding process.

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