Electrode and magnet configurations for processing chambers and related methods and apparatuses for semiconductor manufacturing

Abstract

The present disclosure relates to electrode configurations and magnet configurations for processing chambers and related methods and apparatuses for semiconductor manufacturing. In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes one or more sidewalls, a plate at least partially defining a processing volume, and a substrate support disposed in the processing volume. The processing chamber includes one or more heat sources operable to heat the processing volume, a first electrode disposed outward from the processing volume, and a second electrode coupled to the substrate support.

Description

Technical Field

[0001] This disclosure relates to electrode and magnet configurations for processing chambers and related methods and apparatus for semiconductor manufacturing. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor material or a conductive material, on the upper surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials on the surface of a substrate within a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, operations (such as epitaxial deposition) can be time-consuming, expensive, and inefficient, and may have limited capacity and throughput. Operations can also be limited by application modularity. Furthermore, the hardware can involve relatively large sizes, occupying a significant portion of the manufacturing facility's footprint. Additionally, the process can involve inhomogeneities, which can lead to impaired device performance and / or reduced throughput. For example, gas activation can be restricted and / or involve non-uniform activation, which can result in restricted and / or non-uniform film growth and / or dopant concentration. For instance, gas activation can be limited at relatively low processing temperatures for device fabrication (such as complementary field-effect transistor (CFET) devices). Furthermore, relatively high processing temperatures may involve undesirable dopant diffusion and / or impaired device performance.

[0004] Therefore, there is a need for improved equipment and methods in semiconductor processing. Summary of the Invention

[0005] This disclosure relates to electrode and magnet configurations for processing chambers and related methods and apparatus for semiconductor manufacturing.

[0006] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes one or more sidewalls, a plate that at least partially defines a processing volume, and a substrate support disposed within the processing volume. The processing chamber includes one or more heat sources operable to heat the processing volume, a first electrode disposed outwardly from the processing volume, and a second electrode coupled to the substrate support.

[0007] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes one or more sidewalls, a plate that at least partially defines a processing volume, and a substrate support disposed within the processing volume. The processing chamber includes one or more heat sources operable to heat the processing volume, and a plurality of magnets configured to generate a magnetic field across at least a segment of the processing volume.

[0008] In one or more embodiments, a method of substrate processing includes: heating a substrate on a substrate support to a target temperature, wherein the substrate is disposed in a processing volume; causing one or more processing gases to flow over the substrate; causing the gases to flow into the processing volume; and applying power to the processing volume to generate plasma while causing the gases to flow. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained with reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it will be noted that the drawings illustrate only exemplary embodiments and are not intended to limit the scope of the disclosure, and may allow for other equivalent and effective embodiments.

[0010] Figure 1 It is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 2 It is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0012] Figure 3 It is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0013] Figure 4 It is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0014] Figure 5 It is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0015] Figure 6 It is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0016] Figure 7A This is a schematic diagram of a magnet assembly according to one or more embodiments.

[0017] Figure 7B This is a schematic diagram of a magnetic ring according to one or more embodiments.

[0018] Figure 8 It is a schematic block diagram view of a substrate processing method for semiconductor manufacturing according to one or more embodiments.

[0019] To facilitate understanding, the same reference numerals have been used where possible to identify common elements in the figures. It is anticipated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0020] This disclosure relates to electrode and magnet configurations for processing chambers and related methods and apparatus for semiconductor manufacturing. In one or more embodiments, a magnetic field is used to filter and / or guide at least a portion of the plasma. In one or more embodiments, the plasma is used to activate gases in relatively low-temperature epitaxial deposition operations.

[0021] This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, joining, embedding, welding, fusing, melting together, interference fit, and / or fastening, such as by using bolts, threaded connections, pins, and / or screws. This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integral formation. This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components (such as links, blocks, and / or frames).

[0022] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is suitable for semiconductor manufacturing. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102, and the processing chamber 100 is used to supply plasma for plasma operations (such as plasma-assisted film deposition, ion supply to the substrate 102, pre-cleaning the substrate 102, etching the substrate 102, and / or cleaning the processing chamber 100). In one or more embodiments, the processing chamber 100 generates a precursor crossflow across the top surface 150 of the substrate 102. The processing chamber 100 in… Figure 1 The diagram in the middle shows the treatment conditions.

[0023] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. A substrate support 106, a plate 108, one or more heat sources 141, 143, and a window 110 (e.g., a lower window, such as a lower dome) are disposed within the chamber body. In one or more embodiments, the window 110 is formed of an energy-transmitting material (such as transparent quartz). In one or more embodiments, the plate 108 is a window, such as an upper window. In one or more embodiments, the plate 108 is an upper dome. In one or more embodiments, the plate 108 is formed of an energy-transmitting material (such as transparent quartz). In one or more embodiments, plate 108 is at least partially formed of an opaque material such as opaque quartz (e.g., white and / or gray quartz), black quartz, silicon carbide (SiC), graphite coated with SiC, and / or sapphire. In one or more embodiments, plate 108 is a flat plate. In one or more embodiments, at least a portion of plate 108 is curved. One or more heat sources 141, 143 include a plurality of lower heat sources 143 operable to heat the processing volume 136 from one side of substrate 102 (e.g., from below substrate 102). In one or more embodiments, one or more heat sources 141, 143 include a plurality of upper heat sources 141 operable to heat the processing volume 136 from a second side of substrate 102 (e.g., from above substrate 102). The chamber body and plate 108 at least partially define the processing volume 136. In one or more embodiments, the lower heat sources 141, 143 include lamps (such as halogen lamps or UV lamps). This disclosure contemplates that other heat sources may be used (in addition to or in place of lamps) for the various heat sources described herein. For example, resistive heaters, microwave-powered heaters, light-emitting diodes (LEDs), lasers (e.g., laser diodes), and / or any other suitable heat sources may be used for the various heat sources described herein. In one or more embodiments, the upper heat source 141 is omitted, such that the lower heat source 143 is used to heat the substrate 102 from the back side.

[0024] A substrate support 106 is disposed within the processing volume 136 and between a plate 108 and a window 110. The substrate support 106 is disposed between one or more heat sources 141, 143, and supports a substrate 102. A plate 108 is disposed between the substrate support 106 and a cover 154 of the processing chamber 100. In one or more embodiments, the substrate support 106 includes a base. Other substrate supports (including, for example, substrate carriers and / or one or more annular segments supporting one or more external regions of the substrate 102) are contemplated by this disclosure. An upper heat source is disposed between the cover 154 and the plate 108. A plurality of lower heat sources 143 are disposed between the window 110 and the base plate 152. The plurality of lower heat sources 143 form part of a lower heat source module 145.

[0025] The processing volume 136 and the purification volume 138 are located between the plate 108 and the window 110. The processing volume 136 and the purification volume 138 are portions of the internal volume of the processing chamber 100. One or more gaskets 111, 163 are disposed inward from the main body of the chamber.

[0026] The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is coupled to the shaft 118. In one or more embodiments, the substrate support 106 is coupled to the shaft 118 via one or more arms 119 coupled to the shaft 118. The shaft 118 is coupled to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices to provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0027] The substrate support 106 may include lifting rod holes 107 therein. Each of the lifting rod holes 107 is sized to accommodate a lifting rod 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process. When the substrate support 106 is lowered from a processing position to a transfer position, the lifting rod 132 may rest on a lifting rod stop 134. The lifting rod stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0028] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more gas outlets 116. The one or more gas inlets 114 are part of the injection portion 113 of the chamber body, and the one or more gas outlets 116 are part of the discharge portion 115 of the chamber body. The one or more gas inlets 114 and the one or more purge gas inlets 164 are disposed on the sides of the flow module 112 opposite to the one or more gas outlets 116. A preheating ring 117 is disposed below the one or more gas inlets 114 and the one or more gas outlets 116. The preheating ring 117 is disposed above the one or more purge gas inlets 164. The preheating ring 117 may include a complete ring or one or more ring segments. One or more gaskets 111, 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition and / or cleaning operations. Gas inlet 114 and purified gas inlet 164 are each positioned to allow one or more processing gases P1 and one or more purified gases P2 to flow parallel to the top surface 150 of the substrate 102 disposed within the processing volume 136. Gas inlet 114 is fluidly connected to one or more processing gas sources 151 and one or more clean gas sources 153. Purified gas inlet 164 is fluidly connected to one or more purified gas sources 162. One or more gas outlets 116 are fluidly connected to an exhaust pump 157. The one or more processing gases P1 supplied using one or more processing gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purification gases P2 supplied using one or more purification gas sources 162 may include one or more inert gases (such as argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more processing gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0029] One or more gas sources 158 are also fluidly connected to the gas inlet 114. The one or more gas sources 158 supply one or more plasma precursor gases that can be ignited into plasma. A flow housing 171 is disposed at least partially outward from the flow module 112 and is fluidly connected to the flow module 112 through one or more flow channels 170 disposed between the flow housing 171 and the gas inlet 114. One or more radio frequency (RF) coils 172 are disposed at least partially around the flow housing 171. For example, one or more RF coils 172 may be wound around the flow housing 171. As gas G1 flows from the gas source 158 and through the flow housing 171, the one or more RF coils 172 ignite the gas G1 into plasma PS1, which then flows through the one or more flow channels 170 and enters the gas inlet 114. The one or more flow channels 170 may be formed, for example, in one or more gas chambers. As gas G1 flows, an RF current flows through one or more RF coils 172, which applies a voltage across gas G1 to ignite gas G1 into plasma PS1. This disclosure contemplates that an ion filter can be positioned such that it filters ions from plasma PS1 before plasma PS1 flows over substrate 102. The ion filter may include a conductive material, including, for example, silicon carbide (SiC), molybdenum, tungsten, stainless steel, and / or aluminum (such as anodized aluminum). The ion filter may include an ion blocking plate. One or more gases G1 supplied using one or more gas sources 158 may include one or more precursor gases to generate plasma, such as xenon (Xe2), neon (Ne2), helium (He2), fluorine (F2), krypton (Kr2), and / or any mixture thereof (such as krypton fluoride (KrF)). In one or more embodiments, gas G1 comprises one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetrachlorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one or more embodiments, gas G1 comprises one or more dopant gases, such as germanane, diborane, and / or phosphorus. Other gases are contemplated for use with gas G1. Other precursor gases are contemplated to generate plasma PS1.

[0030] The processing chamber 100 includes a first electrode 181 between a plate 108 and a cover 154. In one or more embodiments, the first electrode 181 is disposed at a gap from the plate 108. The first electrode 181 may be at least partially supported by the cover 154 and / or the upper body 156. In one or more embodiments, the first electrode 181 is at least partially supported by the upper surface 165 of the plate 108. In one or more embodiments, the first electrode 181 has a mesh structure to allow at least a portion of electromagnetic radiation from the upper heat source 141 to propagate through the mesh structure. In one or more embodiments, the first electrode 181 has a solid cross-section. In one or more embodiments, the first electrode 181 is made of an opaque material. In one or more embodiments, the upper heat source 141 is omitted. The first electrode 181 is electrically coupled to an RF power source 180. A second electrode 182 is coupled to a substrate support 106. In one or more embodiments, the second electrode 182 is embedded in the substrate support 106. The substrate support 106 is grounded by connecting the substrate support 106 to a grounded conductive rod 183. In one or more embodiments, RF current flows through the conductive rod 183 from the first electrode 181 to the second electrode 182 and then to ground. In one or more embodiments, the RF current flows through one or more of the following: the plate 108, at least a section of the processing volume 136, and / or the inner surface of the pad 163. Gas G1 flows through the gas inlet 114 into the processing volume 136. As gas G1 flows into the processing volume 136, gas G1 is ignited by the RF current flowing between the first electrode 181 and the second electrode 182 in a capacitively coupled plasma (CCP) manner. This disclosure contemplates that the RF current flow can be reversed, such that the RF current can flow from the second electrode 182 to the first electrode 181. As gas G1 passes through the processing volume 136, the RF power ignites gas G1 into plasma PS1. The size and position of the first electrode 181 and the second electrode 182, as well as the intensity of the RF power applied to the first electrode 181, can be adjusted to determine where the gas G1 becomes plasma PS1 within the processing volume 136 and the intensity of the plasma PS1. In one or more embodiments, the gas G1 is ignited by RF power supplied to the first electrode 181 in conjunction with one or more RF coils 172 disposed at least partially around the flow housing 171. In one or more embodiments, the one or more RF coils 172 are not energized or are omitted, and plasma PS1 is generated using the first electrode 181 and the second electrode 182.

[0031] One or more gas exhaust outlets 116 are further connected to and include an exhaust system 109. The exhaust system 109 is fluidly connected to one or more gas exhaust outlets 116 and an exhaust pump 157. The exhaust system 109 may facilitate controlled deposition of layers on the substrate 102. The exhaust system 109 is disposed on the opposite side of the processing chamber 100 relative to the flow module 112.

[0032] The processing chamber 100 includes one or more gaskets 111, 163 (e.g., lower gasket 111 and upper gasket 163). A flow module 112 (which may be at least a portion of the sidewall of the processing chamber 100) includes one or more gas inlets 114 in fluid communication with the processing volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper gasket 163 and the lower gasket 111.

[0033] During a deposition operation (e.g., an epitaxial growth operation), one or more processing gases P1 flow through one or more gas inlets 114, through one or more gaps, and into a processing volume 136 to flow over a substrate 102. During processing, the substrate 102 is positioned relative to the lower surface 166 of the plate 108 at a distance D1 ranging from about 5 mm to about 30 mm.

[0034] This disclosure also anticipates that one or more purge gases P2 can be supplied to the purge volume 138 (through one or more purge gas inlets 164) during deposition operations and discharged from the purge volume 138. The flow of one or more purge gases P2 is simultaneous with the flow of one or more process gases P1. One or more process gases P1 pass through the gap between the upper liner 163 and the lower liner 111 and are discharged through one or more gas discharge outlets 116. One or more purge gases P2 can pass through one or more outlet openings and be discharged through the same one or more gas discharge outlets 116 as the one or more process gases P1. This disclosure anticipates that one or more purge gases P2 can be discharged separately through one or more second gas discharge outlets separate from the one or more gas discharge outlets 116.

[0035] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111), and into the processing volume 136.

[0036] This disclosure contemplates that plasma PS1 and one or more process gases P1 can flow simultaneously and / or sequentially relative to each other. In one or more embodiments, during a cleaning operation, gas G1 flows through flow housing 171 simultaneously with process gas P1 (gas G1 may flow together with process gas P1 or flow separately from process gas P1), or before or after the flow of one or more process gases P1. Plasma PS1 may flow into process volume 136 before process gas P1 to pre-clean substrate 102. Plasma may flow into process volume 136 after process gas P1 to clean process volume 136 after deposition operation. In one or more embodiments, gas G1 flows through flow housing 171 simultaneously with process gas P1. In more than one embodiment, and as described above, gas G1 is ignited into plasma PS1 in the process chamber by RF power flowing between first electrode 181 and second electrode 182 from RF power source 180. Plasma PS1 and process gas P1 can flow simultaneously into the process volume 136, wherein plasma PS1 can assist the deposition operation by promoting the activation of process gas P1 (e.g., by breaking the bonds of process gas P1). This disclosure contemplates that the voltage and / or frequency of the RF power applied to one or more RF coils 172 and / or the first electrode 181 can be varied and / or pulsed. The frequency can involve a single frequency or multiple frequencies. Multiple frequencies can be combined. The process chamber 100 includes one or more sensor devices 195, 196, 197, 198 (e.g., metering sensors, and / or temperature sensors) configured to measure parameters (e.g., temperature) within the process chamber 100 and / or metering parameters of the substrate 102. In one or more embodiments, the one or more sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more external sensor devices 195, 197, 198. Controller 190 (described below) can control one or more sensor devices 195, 196, 197, 198, and can perform a method of analyzing the uniformity of substrate processing using at least one of the one or more sensor devices 195, 196, 197, 198. In one or more embodiments, each of the one or more sensor devices 195, 196, 197, 198 includes a sensor comprising one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, each of the one or more sensor devices 195, 196, 197, 198 includes a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, one or more of the sensor devices 195, 196, 197, 198 is a pyrometer and / or an optical sensor, such as an optical pyrometer.This disclosure contemplates the use of sensor devices other than pyrometers, and / or one or more of sensor devices 195, 196, 197, 198 that can measure properties other than temperature (such as metrological properties). For example, one or more of sensor devices 195, 196, 197, 198 can measure one or more gas parameters and / or one or more plasma parameters (such as ion density, electron temperature, electron density, ion energy and angular distribution, enthalpy, radical density, and / or absorption). In one or more embodiments, one or more of sensor devices 195, 196, 197, 198 include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Langmuir probe, a Faraday cup, and / or an absorption spectrometer.

[0037] In one or more embodiments, one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed on the substrate 102 and adjacent to the cover 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent to the bottom plate 152. This disclosure contemplates that at least one of the lower sensor devices 195 can be vertically aligned below at least one of the upper sensor devices 196, 197 (such as external sensor device 197).

[0038] This disclosure contemplates that all sensor devices may be disposed on or near the plate 108 and / or the cover 154. For example, one or more lower sensor devices 195 may be omitted.

[0039] Each sensor device 195, 196, 197, 198 may be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the processing chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, 198. In one or more embodiments, in addition to sensor devices 195, 196, 197, 198, the processing chamber 100 includes one or more additional sensor devices. In one or more embodiments, the processing chamber 100 may include sensor devices disposed at different locations and / or with different orientations than the illustrated sensor devices 195, 196, 197, 198.

[0040] As shown, controller 190 communicates with processing chamber 100 and is used to control the operation of processes and methods, such as those described herein. Controller 190 is configured to receive data or inputs as sensor readings from sensors, such as sensor devices 195, 196, 197, 198. For example, sensor devices may include: sensor devices monitoring layer growth on substrate 102; and / or sensor devices monitoring the temperature of substrate 102, preheating ring 117, substrate support 106, and / or gaskets 111, 163. As an example, one or more sensor devices 195, 196, 197, 198 may measure the temperature of substrate 102 and / or preheating ring 117, and may control the power to one or more heat sources 141, 143 and / or energy source 176 based on the measured temperature (e.g., using feedback control). As described, one or more sensor devices may include, for example, pyrometers. In one or more embodiments, in addition to or instead of a pyrometer, one or more thermocouples (e.g., proximity thermocouples) may be used, and the power to one or more heat sources 141, 143 and / or energy source 176 may be controlled based on the measured temperature (e.g., using feedback control).

[0041] Controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), instruction-containing memory 191, and support circuitry 192 for the CPU 193. Controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, controller 190 is communicatively coupled to a dedicated controller, and controller 190 functions as a central controller.

[0042] Controller 190 has any form of general-purpose computer processor used in industrial settings to control various substrate processing chambers and devices, and subprocessors thereon or therein. Memory 191, or non-transitory computer-readable medium, is one or more readily available types of memory, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage (local or remote). Support circuitry 192 of controller 190 is coupled to CPU 193 to support CPU 193. Support circuitry 192 includes cache, power supply, frequency circuitry, input / output circuitry systems and subsystems, and the like. Operating parameters (e.g., power supplied to one or more heat sources 141, 143, one or more RF coils 172, and / or the first electrode 181, cleaning formula, and / or processing formula) and operations are stored as software routines in memory 191. These software routines are executed or invoked to transform controller 190 into a dedicated controller to control the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein (such as the operation of method 800). When executed, instructions stored in memory cause one or more of the operations described herein (such as the operation of method 800) to be performed with respect to processing chamber 100. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0043] The various operations described herein can be performed automatically using the controller 190, or can be performed automatically and / or manually using certain operations performed by the user.

[0044] The controller 190 is configured to control the power, deposition, cleaning, rotational position, heating, and gas flow through the processing chamber 100 of the one or more heat sources 141, 143, and / or energy sources 176 by providing output to the sensor devices 195, 196, 197, 198, one or more heat sources 141, 143, and / or energy sources 176, the processing gas source 151, the purified gas source 162, the motion component 121, and / or the exhaust pump 157.

[0045] During processing, in one or more embodiments, substrate 102 is heated to a target temperature of 400 degrees Celsius or higher, or 600 degrees Celsius or lower. In one or more embodiments, the target temperature of substrate 102 is in the range of 380 degrees Celsius to 600 degrees Celsius, for example, 400 degrees Celsius to 500 degrees Celsius. In one or more embodiments, the target temperature of substrate 102 is less than 500 degrees Celsius. In one or more embodiments, the target temperature of substrate 102 is 400 degrees Celsius or lower, such as less than 200 degrees Celsius (e.g., about 150 degrees Celsius).

[0046] Figure 2 This is a schematic side cross-sectional view of a processing chamber 200 according to one or more embodiments. The processing chamber 200 is similar to... Figure 1 The processing chamber 100 shown includes one or more aspects, features, components, operations, and / or properties thereof.

[0047] Figure 2The system includes multiple magnet assemblies 290A, 290B, 290C, one or more actuators 201 (multiple are illustrated), and one or more actuator supports 202 (multiple are illustrated). In one or more embodiments, the magnets of the magnet assemblies 290A, 290B, 290C are used to generate magnetic fields to guide and / or filter ions and / or electrons. For example, the magnetic field can filter ions from plasma PS1, guide ions from plasma PS1 toward substrate 102, and / or slow down electrons (e.g., electrons from RF current) to promote plasma generation. At least one of the multiple magnets is coupled to one or more actuators 201, which are operable to move the corresponding magnet. In one or more embodiments, multiple magnets of the magnet assemblies 290A, 290B, and 290C are coupled to multiple actuators 201A, 201B, and 201C. Actuators 201A, 201B, and 201C are directly coupled to the processing chamber 200 or coupled to one or more actuator supports 202A, 202C. Actuators 201A, 201B, and 201C are movable and allow adjustment of the position of the magnets in magnet assemblies 290A, 290B, and 290C for plasma processing, which can adjust the processing using plasma PS1. In one or more embodiments, the magnets in each magnet assembly 290A, 290B, and 290C can move independently relative to each other. The magnets in magnet assemblies 290A, 290B, and 290C can be permanent or non-permanent magnets. The magnets in magnet assemblies 290A, 290B, and 290C may include one or more neodymium iron boron magnets, samarium cobalt magnets, alnico magnets, and / or any combination thereof. In one or more embodiments, the non-permanent magnets each include an electromagnetic coil operable to allow a current (e.g., direct current) to flow through it to generate a magnetic field. The magnets may include magnetic materials suitable for temperatures above 300 degrees Celsius (such as 400 degrees Celsius or higher). Other magnetic materials are contemplated. The magnets in magnet assemblies 290A, 290B, and 290C can be fixed in place.

[0048] Magnet assemblies 290A, 290B, and 290C each include one or more magnets for each assembly. In one or more embodiments, magnet assemblies 290A, 290B, and 290C each include four curved (e.g., bow-shaped) segments forming a ring. The magnets of magnet assemblies 290A, 290B, and 290C may include any number of curved segments forming the ring, such as three curved segments, two curved segments, and one curved segment forming the ring. In one or more embodiments, the magnets of magnet assemblies 290A, 290B, and 290C generate one or more magnetic fields E1, E2, and E3.

[0049] In one or more embodiments, a first magnet assembly 290A is at least partially positioned around a flow housing 171 outside the processing chamber 200. The first magnet assembly 290A generates a magnetic field E1 that is substantially perpendicular to the flow of plasma PS1 ignited within the flow housing 171. The magnetic field E1 is generated at an angle (e.g., substantially perpendicular or at another angle) relative to the gas flow path of gas G1. The magnetic field E1 can filter or guide (e.g., slow down) plasma ions or RF electrons. In one or more embodiments, the angled magnetic field E1 filters ions from plasma PS1 and / or slows down RF electrons to adjust the processing without using physical filters (such as perforated plates).

[0050] In one or more embodiments, a magnetic field E2 is generated across one or more flow openings at least partially defined by gaskets 111, 163. A second magnet assembly 290B generates a magnetic field E2 at an angle (e.g., approximately vertical or at another angle) relative to the gas flow path of gas G1. Magnetic field E2 may filter or guide (e.g., slow down) plasma ions or RF electrons. In one or more embodiments, a magnetic field E3 is generated across at least one section of the processing volume 136. Magnetic field E3 is at an angle (e.g., approximately vertical or at another angle) relative to the gas flow path of gas G1. Magnetic field E2 may filter or guide (e.g., slow down) plasma ions or RF electrons. A third magnet assembly 290C generates magnetic field E3. In one or more embodiments, magnetic field E3 is at an angle (e.g., approximately vertical or at another angle) to the flow of plasma PSI in the processing volume 136. In one or more embodiments, any of the embodiments described above may be combined with each other. The second magnet assembly 290B is disposed at least partially around the pads 111, 163, plate 108, and window 110. The third magnet assembly 290C is disposed at least partially around plate 108 and window 110.

[0051] Figure 3 This is a schematic side cross-sectional view of a processing chamber 300 according to one or more embodiments. The processing chamber 300 is similar to... Figure 1 The processing chamber 100 and / or shown Figure 2 The processing chamber 200 shown includes one or more aspects, features, components, operations, and / or properties thereof.

[0052] The processing chamber 300 includes a plurality of magnets 390A and 390B that generate a magnetic field. In one or more embodiments, a second magnet group 390B is arranged radially outward from the first magnet group 390A to generate a curved magnetic field E4. The magnetic field E4 is angled relative to the plasma PS1 flow to filter or guide (e.g., slow down) ions and / or RF electrons. For example, ions may be guided toward the substrate 102. In one or more embodiments, magnets 390A and 390B include a plurality of curved segments as previously described. In one or more embodiments, magnets 390A and 390B are coupled to, for example, Figure 2 Multiple actuators 201 are described in the document.

[0053] Figure 4 This is a schematic side cross-sectional view of a processing chamber 400 according to one or more embodiments. The processing chamber 400 is similar to... Figure 1 The processing chamber 100 shown Figure 2 The processing chamber 200 shown, and / or Figure 3 The processing chamber 300 in the middle, and includes one or more aspects, features, components, operations, and / or properties thereof.

[0054] The processing chamber 400 includes a plurality of magnets 490A and 490B that generate a magnetic field. In one or more embodiments, a first magnet group 490A is arranged radially outward from a second magnet group 490B to generate a curved magnetic field E5. The magnetic field E5 is approximately parallel to the plasma flow PS1. The magnetic field E5 filters or guides (e.g., slows down) ions and / or RF electrons. In one or more embodiments, magnets 490A and 490B include a plurality of curved segments as previously described. In one or more embodiments, magnets 490A and 490B are coupled to, for example, Figure 2 Multiple actuators 201 are described in the document.

[0055] Figure 5 This is a schematic side cross-sectional view of a processing chamber 500 according to one or more embodiments. The processing chamber 500 is similar to... Figure 1 The processing chamber 100 shown Figure 2 The processing chamber 200 shown Figure 3 The processing chamber 300 and / or Figure 4 The processing chamber 400 in the middle, and includes one or more aspects, features, components, operations, and / or properties thereof.

[0056] The processing chamber 500 includes a cover assembly 510, which includes an outer wall 511, an inner wall 512, and a magnet assembly 590 of one or more magnets disposed at least partially around the outer wall 511. The processing chamber 500 includes one or more RF coils 172, one or more gas inlets 520, a cover volume 530, and a magnetic field E6 disposed at least partially around the outer wall 511.

[0057] In one or more embodiments, gas G1 flows through gas inlet 520 into cover assembly 510 and into cover volume 530 defined by inner wall 511 and outer wall 512. As gas G1 flows through cover volume 530, gas G1 is ignited into plasma PS1 by RF power passing through one or more RF coils 172. Magnet 590 generates magnetic field E6. Magnetic field E6 is generated at an angle (e.g., approximately perpendicular or at another angle) relative to the gas flow path of gas G1 through cover volume 530 to filter or guide (e.g., slow down) the flow of ions and / or RF electrons.

[0058] In one or more embodiments, process gas P1 may flow simultaneously with gas G1 into the cap assembly volume for plasma-assisted deposition. In one or more embodiments, gas G1 flows simultaneously through flow housing 171 in combination with gas G1 flowing through cap assembly 510. In one or more embodiments, magnet assembly 590A includes multiple curved sections as previously described. In one or more embodiments, magnets of magnet assembly 590 are coupled to, for example, Figure 2 The plurality of actuators 201 described herein are intended to be omitted. Figure 5 The gas inlet 114, one or more RF coils 172, and flow housing 171 are shown, and gas G1 and process gas P1 can flow through one or more gas inlets 520 and through cover volume 530.

[0059] Figure 6 This is a schematic side cross-sectional view of a processing chamber 600 according to one or more embodiments. The processing chamber 600 is similar to... Figure 5 The processing chamber 500 shown includes one or more aspects, features, components, operations, and / or properties thereof.

[0060] In one or more embodiments, a first magnet assembly 690A of one or more magnets is disposed inward from the inner wall 512. A second magnet assembly 690B of one or more magnets is disposed at the bottom of the processing chamber 600 (e.g., on the base plate 152). The second magnet assembly 690B is disposed radially outward from the first magnet assembly 690A. Magnets 690A and 690B generate a curved magnetic field E7. The magnetic field E7 is generally parallel to the plasma flow PS1 to filter or guide (e.g., slow down) ions and / or RF electrons. In one or more embodiments, the parallel magnetic field E7 guides the ions of the plasma PS1 toward the substrate 102. In one or more embodiments, magnet assemblies 690A and 690B each include a plurality of curved portions as previously described. In one or more embodiments, magnets 690A and 690B are coupled to, for example, Figure 2 Multiple actuators 201 are described in the document.

[0061] Figure 7A This is a schematic diagram of a magnet assembly 790 according to one or more embodiments. The magnets of the magnet assembly 790 may be similar to any magnet previously described, and the magnet assembly 790 includes at least four curved segments 791 to 794 that together form a ring. The magnet assembly 790 may consist of any number of curved segments, such as five curved segments, three curved segments, two curved segments, or a complete curved segment forming a magnetic ring.

[0062] The view of this set of magnets 790 can be, for example... Figure 2 The left side view of the first magnet assembly 290A shown. Figure 3 Top view of the first magnet assembly 390A shown. Figure 4 The left side view of the first magnet assembly 490A shown. Figure 5 Top view of magnet assembly 590 shown, and / or Figure 6 The top view of the first magnet assembly 690A shown.

[0063] Figure 7B This is a schematic diagram of a magnetic ring 780 according to one or more embodiments. The magnetic ring 780 can be used to replace any of the magnet assemblies described above.

[0064] The view of the magnetic ring 780 can be, for example... Figure 2 The left side view of the first magnet assembly 290A shown. Figure 3 Top view of the first magnet assembly 390A shown. Figure 4 The left side view of the first magnet assembly 490A shown. Figure 5 Top view of magnet assembly 590 shown, and / or Figure 6 The top view of the first magnet assembly 690A shown.

[0065] Figure 8 This is a schematic block diagram view of a substrate processing method 800 for semiconductor manufacturing according to one or more embodiments.

[0066] Operation 801 includes heating a substrate positioned on a substrate support within a processing chamber. The substrate is disposed within the processing volume of the processing chamber. The substrate can be heated from either side or one side. Heating includes heating the substrate to a target temperature. In one or more embodiments, the target temperature is less than 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or lower.

[0067] Operation 802 includes causing one or more processing gases to flow over the substrate.

[0068] Operation 803 includes flowing the plasma precursor gas. The plasma precursor gas may flow toward the processing volume.

[0069] Operation 804 includes igniting the plasma precursor gas into plasma by applying power to the plasma precursor gas. The plasma can be ignited using either capacitively coupled plasma (CCP) or inductively coupled plasma (ICP) methods. The plasma precursor gas can be ignited into plasma in the processing volume 136 or in the flow envelope 171. For example, the plasma precursor gas can flow to... Figure 1 The processing volume 136 is shown. Electrical power can then be applied to electrodes 181 disposed on plate 108. In one or more embodiments, plasma for operation 804 is supplied during the flow of one or more processing gases in operation 802, and the plasma flows above the substrate. In one or more embodiments, plasma for operation 804 is supplied before or after the flow of one or more processing gases in operation 802.

[0070] Operation 805 includes maintaining the processed volume under a pressure. In one or more embodiments, the pressure is maintained at less than 60 Torr, such as in the range of 0 Torr to 30 Torr. In one or more embodiments, the pressure is maintained at less than 1 Torr, such as in the range of 0 Torr to 5 mTorr.

[0071] The benefits of this disclosure include reliable gas activation (e.g., at relatively low processing temperatures); adjustable gas activation; modularity of plasma operation and epitaxial deposition operation in a single chamber; modularity of chamber applications; more uniform gas activation; temperature uniformity (e.g., temperature uniformity in the outer regions of the substrate); reduced gas consumption and waste; increased growth rate; and more uniform film growth and / or dopant concentration. As an example, ions and / or free radicals can be used to activate the gas for processing, in addition to or instead of electromagnetic radiation (such as infrared and / or ultraviolet radiation).

[0072] Benefits also include enhanced device performance; reduced or eliminated unintended dopant diffusion; efficient processing; and increased throughput. For example, for substrate target temperatures below 500 degrees Celsius, such as target temperatures in the range of 380 to 500 degrees Celsius, gas activation is facilitated. For instance, when the substrate is at approximately 400 degrees Celsius, gases can be activated for processing operations.

[0073] It is anticipated that one or more aspects disclosed herein can be combined. As an example, the following can be combined: a processing chamber 100; a flow module 112; a flow housing 171; one or more RF coils 172; a gas source 158; an RF power source 180; a first electrode 181; a second electrode 182; a conductive rod 183; a processing chamber 200; magnet assemblies 290A, 290B, 290C; actuators 201A, 201B, 201C; actuator supports 202A, 202C; and the processing chamber itself. 300, magnet assemblies 390A, 390B, processing chamber 400, magnet assemblies 490A, 490B, processing chamber 500, magnet assembly 590, cover assembly 510, inner wall 512, outer wall 511, one or more gas inlets 520, processing chamber 600, magnet assemblies 690A, 690B, magnet assembly 790, magnetic ring 780, and / or one or more aspects, features, components, operations, and / or properties of method 800. This disclosure contemplates that one or more coils 172 can be disposed in various locations, which may differ from... Figures 1 to 6 As shown above. Furthermore, it is anticipated that one or more aspects disclosed herein may include some or all of the benefits previously mentioned.

[0074] Although the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from its basic scope, which is defined by the following claims.

Claims

1. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: One or more sidewalls; A plate, the plate at least partially defining the processing volume; A substrate support member disposed within the processing volume; One or more heat sources, said heat sources being operable to heat the processing volume; A first electrode is disposed outward from the processing volume; as well as The second electrode is coupled to the substrate support.

2. The processing chamber of claim 1, wherein the processing chamber further comprises: A radio frequency (RF) power source, said RF power source being electrically coupled to the first electrode; and A conductive rod, which is electrically coupled to the second electrode.

3. The processing chamber of claim 1, wherein the first electrode is disposed at a gap from the plate, and the second electrode is embedded in the substrate support.

4. The processing chamber of claim 1, wherein the processing chamber further comprises: A flow enclosure, the flow enclosure being disposed at least partially outward from the one or more sidewalls; and One or more (RF) coils, said coils being disposed at least partially around the flow housing.

5. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: One or more sidewalls; A plate, the plate at least partially defining the processing volume; A substrate support member disposed within the processing volume; One or more heat sources, said heat sources being operable to heat the processing volume; as well as Multiple magnets are configured to generate a magnetic field spanning at least one segment of the processing volume.

6. The processing chamber of claim 5, wherein the plurality of magnets comprises a first magnet group and a second magnet group, the first and second magnet groups each comprising a plurality of curved sections.

7. The processing chamber of claim 5, wherein at least one of the plurality of magnets comprises a magnetic ring.

8. The processing chamber of claim 5, wherein at least one of the plurality of magnets is coupled to one or more actuators operable to move the respective magnet.

9. The processing chamber of claim 5, wherein the processing chamber further comprises: A flow enclosure, the flow enclosure being disposed at least partially outward from the one or more sidewalls; and One or more (RF) coils, the coils being disposed at least partially around the flow housing, wherein at least one of the plurality of magnets is disposed at least partially around the flow housing.

10. The processing chamber of claim 5, wherein the processing chamber further comprises: Cover assembly, the cover assembly comprising: outer wall; Inner wall; and One or more magnets are disposed at least partially around the cover assembly.

11. The processing chamber of claim 10, wherein the magnet comprises a plurality of second magnets disposed inwardly from the inner wall.

12. The processing chamber of claim 10, wherein the cover assembly further comprises: Gas inlet; and One or more RF coils, the RF coils being disposed at least partially around the outer wall.

13. The processing chamber of claim 5, wherein the magnetic field is generally curved.

14. The processing chamber of claim 5, wherein the plurality of magnets are configured to generate a magnetic field at an angle relative to the gas flow path.

15. The processing chamber of claim 5, wherein the plurality of magnets are arranged at least partially around the plate and window, and the plurality of magnets are operable to generate the magnetic field across at least a segment of the processing volume.

16. The processing chamber of claim 5, wherein the plurality of magnets comprises one or more first magnets and one or more second magnets disposed radially outward from the one or more first magnets.

17. A substrate processing method, the substrate processing method comprising: The substrate positioned on the substrate support is heated to the target temperature, and the substrate is disposed in the processing volume; One or more processing gases are allowed to flow above the substrate; Allow gas to flow into the processing volume; and Power is applied to the processing volume while the gas is being circulated to generate plasma.

18. The method of claim 17, wherein the power is applied across the processing volume between the first electrode and the second electrode coupled to the substrate support.

19. The method of claim 17, wherein a magnetic field is generated across at least a portion of the plasma.

20. The method of claim 19, wherein the magnetic field is at an angle relative to the gas flow path of the gas.

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