Light detection device

Abstract

A light detecting device according to an embodiment of the present disclosure includes a semiconductor layer; a plurality of pixels including a first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region. The first pixel includes a first separation region, a second separation region, a third separation region, a fourth separation region, a floating diffusion portion disposed between the third separation region and the fourth separation region, and a first region of a first conductivity type disposed between the third separation region and the floating diffusion portion.

Description

Technical Field

[0001] This disclosure relates to a light detection device. Background Technology

[0002] A device is proposed that has an inter-pixel separation portion including a protrusion that protrudes toward the center of the pixel like a protrusion and performs photoelectric conversion on incident light (Patent Document 1).

[0003] Citation List

[0004] Patent documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2018-201015 Summary of the Invention

[0006] It is hoped that the performance of the light detection device will be improved.

[0007] The aim is to provide a light detection device with excellent performance.

[0008] The photodetector according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; a fourth separation region disposed between adjacent second and fourth photoelectric conversion elements in the second direction; a floating diffusion portion disposed between the third and fourth separation regions; and a first region of a first conductivity type disposed between the third separation region and the floating diffusion portion.

[0009] The photodetector according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; and a fourth separation region disposed between adjacent second and fourth photoelectric conversion elements in the second direction. The length of the third separation region in the first direction is different from the length of the first separation region in the second direction or the length of the second separation region in the second direction.

[0010] The photodetector according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; a first gate and a second gate, corresponding to and configured to transport charge with respect to the first photoelectric conversion element; and an overflow path disposed adjacent to the first, second, third, and fourth photoelectric conversion elements. The first gate is disposed adjacent to the overflow path and the third separation region. The second gate is disposed adjacent to the overflow path and the first separation region.

[0011] The light detection device according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, each pixel including a photoelectric conversion element disposed in the semiconductor layer; a pixel separation region configured to surround the plurality of adjacent pixels; and a first separation region disposed between the plurality of adjacent pixels. The first separation region is disposed at a certain distance from the pixel separation region.

[0012] The photodetector according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; a fourth separation region disposed between adjacent second and fourth photoelectric conversion elements in the second direction; a floating diffusion portion disposed between the third and fourth separation regions; and a first region of a first conductivity type disposed between adjacent pixels. Attached Figure Description

[0013] Figure 1 This is a block diagram illustrating an example of the schematic configuration of an imaging apparatus, which is an example of a light detection device according to an embodiment of the present disclosure.

[0014] Figure 2 This is a diagram illustrating an example of the pixel configuration of an imaging apparatus according to a first embodiment of the present disclosure.

[0015] Figure 3 This is a diagram illustrating an example of the circuit configuration of the pixels of an imaging apparatus according to a first embodiment of the present disclosure.

[0016] Figure 4A This is a diagram illustrating another example of the circuit configuration of the pixels of an imaging apparatus according to a first embodiment of the present disclosure.

[0017] Figure 4B This is a diagram illustrating yet another example of the circuit configuration of the pixels of an imaging apparatus according to a first embodiment of the present disclosure.

[0018] Figure 5A This is a diagram illustrating yet another example of the circuit configuration of the pixels of an imaging apparatus according to a first embodiment of the present disclosure.

[0019] Figure 5B This is a diagram illustrating yet another example of the circuit configuration of the pixels of an imaging apparatus according to a first embodiment of the present disclosure.

[0020] Figure 6 This is a diagram illustrating an example of the planar configuration of pixels in an imaging apparatus according to a first embodiment of the present disclosure.

[0021] Figure 7This is a diagram illustrating an example of the cross-sectional configuration of pixels in an imaging apparatus according to a first embodiment of the present disclosure.

[0022] Figure 8 This is a diagram illustrating an example layout of an imaging apparatus according to a first embodiment of the present disclosure.

[0023] Figure 9 This is a diagram illustrating an example of the configuration of pixel transistors in an imaging apparatus according to a first embodiment of the present disclosure.

[0024] Figure 10 Example of the configuration of the imaging apparatus according to Modification 1 of this disclosure.

[0025] Figure 11 Example of the configuration of an imaging apparatus according to a variation 2 of this disclosure.

[0026] Figure 12 Example of the configuration of the imaging apparatus according to Modification 3 of this disclosure.

[0027] Figure 13 Example of the configuration of the imaging apparatus according to Modification 4 of this disclosure.

[0028] Figure 14 Example of the configuration of the imaging apparatus according to Modification 4 of this disclosure.

[0029] Figure 15 Another configuration example of an imaging apparatus according to Modification 4 of this disclosure is used to illustrate this invention.

[0030] Figure 16 This is a diagram illustrating an example of the configuration of an imaging apparatus according to Modification 5 of this disclosure.

[0031] Figure 17 Another configuration example of an imaging apparatus according to Modification 5 of this disclosure is used to illustrate this invention.

[0032] Figure 18 This is a diagram illustrating an example of the configuration of an imaging apparatus according to Modification 6 of this disclosure.

[0033] Figure 19 Another configuration example of an imaging apparatus according to Modification 6 of this disclosure is used to illustrate this invention.

[0034] Figure 20 This is a diagram illustrating an example of the configuration of an imaging apparatus according to Modification 7 of this disclosure.

[0035] Figure 21 Example of the configuration of the imaging apparatus according to Modification 8 of this disclosure.

[0036] Figure 22Example of the configuration of the imaging apparatus according to Modification 8 of this disclosure.

[0037] Figure 23 Example of the configuration of the imaging apparatus according to Modification 9 of this disclosure.

[0038] Figure 24 Example of the configuration of the imaging apparatus according to Modification 9 of this disclosure.

[0039] Figure 25 Example of the configuration of the imaging apparatus according to Modification 10 of this disclosure.

[0040] Figure 26 Example of the configuration of the imaging apparatus according to Modification 10 of this disclosure.

[0041] Figure 27 Example of the configuration of the imaging apparatus according to Modification 10 of this disclosure.

[0042] Figure 28 Another configuration example of the imaging apparatus according to Modification 10 of this disclosure is used to illustrate this invention.

[0043] Figure 29 Another configuration example for illustrating the imaging apparatus according to Modification 10 of this disclosure.

[0044] Figure 30 This is a diagram illustrating an example of the planar configuration of pixels in an imaging apparatus according to a second embodiment of the present disclosure.

[0045] Figure 31 This is a diagram illustrating an example of the planar configuration of pixels in an imaging apparatus according to a second embodiment of the present disclosure.

[0046] Figure 32 This is a diagram illustrating an operational example of the imaging apparatus according to a second embodiment of the present disclosure.

[0047] Figure 33 This is a diagram illustrating an operational example of the imaging apparatus according to a second embodiment of the present disclosure.

[0048] Figure 34 Example of the configuration of an imaging apparatus according to a variation 11 of this disclosure.

[0049] Figure 35 Example of the configuration of an imaging apparatus according to a variation 11 of this disclosure.

[0050] Figure 36 Example of the configuration of the imaging apparatus according to Modification 12 of this disclosure.

[0051] Figure 37Example of the configuration of the imaging apparatus according to Modification 12 of this disclosure.

[0052] Figure 38 Example of the configuration of the imaging apparatus according to Modification 12 of this disclosure.

[0053] Figure 39 Example of the configuration of the imaging apparatus according to Modification 12 of this disclosure.

[0054] Figure 40 Another configuration example of an imaging apparatus according to Modification 12 of this disclosure is used to illustrate this invention.

[0055] Figure 41 Another configuration example of an imaging apparatus according to Modification 12 of this disclosure is used to illustrate this invention.

[0056] Figure 42 This is a diagram illustrating an example of the planar configuration of pixels in an imaging apparatus according to a third embodiment of the present disclosure.

[0057] Figure 43 Example of the configuration of an imaging apparatus according to a variation 13 of this disclosure.

[0058] Figure 44 Example of the configuration of an imaging apparatus according to a variation 14 of this disclosure.

[0059] Figure 45 Example of the configuration of the imaging apparatus according to Modification 15 of this disclosure.

[0060] Figure 46 Example of the configuration of the imaging apparatus according to Modification 15 of this disclosure.

[0061] Figure 47 Example of the configuration of the imaging apparatus according to Modification 15 of this disclosure.

[0062] Figure 48 Another configuration example of an imaging apparatus according to Modification 15 of this disclosure is used to illustrate this invention.

[0063] Figure 49 Another configuration example for illustrating the imaging apparatus according to Modification 15 of this disclosure.

[0064] Figure 50 Another configuration example for illustrating the imaging apparatus according to Modification 15 of this disclosure.

[0065] Figure 51 Another configuration example for illustrating the imaging apparatus according to Modification 15 of this disclosure.

[0066] Figure 52Another configuration example for illustrating the imaging apparatus according to Modification 15 of this disclosure.

[0067] Figure 53 This is a block diagram illustrating an example of the configuration of an electronic device including an imaging apparatus.

[0068] Figure 54 This is a block diagram illustrating an example of the schematic configuration of a vehicle control system.

[0069] Figure 55 This is an example diagram illustrating the installation location of the vehicle exterior information detection unit and the imaging unit.

[0070] Figure 56 This is a block diagram illustrating an example of the schematic configuration of an endoscopic surgical system.

[0071] Figure 57 This is a block diagram illustrating an example of the functional configuration of a camera and a camera control unit (CCU). Detailed Implementation

[0072] The embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that the descriptions are given in the following order.

[0073] 1. First Implementation Plan

[0074] 2. Second Implementation Plan

[0075] 3. Third Implementation Plan

[0076] 4. Applicable Examples

[0077] 5. Application Examples

[0078] <1. First Implementation Plan>

[0079] Figure 1 This is a block diagram illustrating an example of the schematic configuration of an imaging apparatus, which is an example of a light detection device according to a first embodiment of the present disclosure. The light detection device is configured to detect incident light. The imaging apparatus 1, as a light detection device, includes a plurality of pixels P, each pixel P including a photoelectric conversion unit (photoelectric conversion element), and is configured to perform photoelectric conversion on the incident light and generate a signal. The imaging apparatus 1 can receive light transmitted through an optical system (not shown) including an optical lens and generate a signal.

[0080] Imaging apparatus 1 includes, for example, a semiconductor substrate (e.g., a silicon substrate) in which a plurality of pixels P are disposed. The photoelectric conversion unit of each pixel P in imaging apparatus 1 is, for example, a photodiode (PD) and is configured to perform photoelectric conversion of light. Imaging apparatus 1 has an imaging region (pixel section 100) in which the plurality of pixels P are arranged in a matrix-like two-dimensional configuration. The pixel section 100 of imaging apparatus 1 may be referred to as a pixel array in which the plurality of pixels P are disposed. The photoelectric conversion unit of each pixel P may be referred to as the photoelectric conversion region.

[0081] Imaging device 1 receives incident light (image light) from a subject being measured via an optical lens system including optical lenses. Imaging device 1 captures an image of the subject formed by the optical lenses. Imaging device 1 can perform photoelectric conversion on the received light (e.g., visible light, infrared light, etc.) and generate pixel signals. Imaging device 1, as a light detection device, is a device configured to receive incident light and generate signals, and can be referred to as a light receiving device.

[0082] As an example, the imaging device 1 (light detection device) can be configured as an image sensor. Imaging device 1 is, for example, a complementary metal-oxide-semiconductor (CMOS) image sensor. Imaging device 1 can have a structure in which multiple semiconductor layers are stacked on top of each other (stacked structure). Imaging device 1 can be used in various electronic devices, such as digital cameras, camcorders, and mobile phones.

[0083] As an example, such as Figure 1 As shown, the imaging device 1 includes a pixel unit 100, a pixel driving unit 105, a signal processing unit 112, a control unit 113, and a processing unit 114. Furthermore, the imaging device 1 is provided with, for example, multiple control lines Lread and multiple signal lines VSL.

[0084] The control line Lread is a signal line that allows the transmission of signals to control pixel P, and is connected to pixel P in the pixel driver unit 105 and the pixel unit 100. Figure 1 In the example shown, in the pixel section 100, multiple control lines Lread are wired for each pixel row comprising a plurality of pixels P arranged side by side in the horizontal direction (row direction). The control lines Lread are configured to transmit control signals for reading signals from the pixels P.

[0085] As an example, the multiple control lines Lread for each pixel row wiring of the imaging device 1 include wiring for transmitting signals to control the transmission transistor, wiring for transmitting signals to control the selection transistor, and wiring for transmitting signals to control the reset transistor, etc. The control lines Lread can be referred to as driving lines (pixel driving lines) for transmitting signals to drive the pixel P.

[0086] The signal line VSL is a signal line that allows signals to be transmitted from pixel P, and is connected to pixel P and signal processing unit 112 of pixel unit 100. In pixel unit 100, for example, a signal line VSL is wired for each pixel column including multiple pixels P arranged side by side in the vertical direction (column direction). The signal line VSL is a vertical signal line and is configured to transmit signals output from pixel P.

[0087] The pixel driving unit 105 is configured to drive each pixel P of the pixel unit 100. The pixel driving unit 105 is a driving circuit and includes multiple circuits, such as a buffer, a shift register, and an address decoder. The pixel driving unit 105 generates signals for driving the pixels P and outputs these signals to each pixel P of the pixel unit 100 via the control line Lread. The pixel driving unit 105 is controlled by the control unit 113 and performs control over the pixels P of the pixel unit 100.

[0088] The pixel driving unit 105 generates signals for controlling pixels P, such as signals for controlling the transmission transistor of pixel P, signals for controlling the selection transistor, or signals for controlling the reset transistor, and supplies these signals to each pixel P via the control line Lread. The pixel driving unit 105 can perform control of reading pixel signals from each pixel P. The pixel driving unit 105 can be referred to as a pixel control unit configured to control each pixel P. It should be noted that the pixel driving unit 105 and the control unit 113 can be collectively referred to as the pixel control unit.

[0089] The signal processing unit 112 is configured to perform signal processing on signals input to the pixel. The signal processing unit 112 is a signal processing circuit and includes, for example, a load circuit, an analog-to-digital (AD) conversion circuit, a level selection switch, etc. As an example, the load circuit includes a current source configured to supply current to the amplifying transistor of the pixel P. For example, the load circuit and the amplifying transistor of the pixel P together form a source follower circuit.

[0090] The signal processing unit 112 may include an amplifier circuit configured to amplify the signal read from pixel P via signal lines VSL. For example, a load circuit, an amplifier circuit, an AD conversion circuit, etc., may be provided for each of the multiple signal lines VSL. The load circuit, amplifier circuit, AD conversion circuit, etc., may be provided for each pixel column of the pixel unit 100.

[0091] The signals output from each pixel P selected and scanned by the pixel driving unit 105 are input to the signal processing unit 112 via signal lines VSL. The signal processing unit 112 can perform signal processing on the signals of the pixel P, such as AD conversion and CDS (correlated double sampling). The signals of each pixel P transmitted through each signal line VSL are processed by the signal processing unit 122 and output to the processing unit 114.

[0092] The processing unit 114 is configured to perform signal processing on the input signal. The processing unit 114 is a processing circuit and includes circuitry for performing various signal processing operations on the pixel signal, for example. The processing unit 114 may include a processing section and a memory. The processing unit 114 performs signal processing on the pixel signal input from the signal processing unit 112 and outputs the processed pixel signal. The processing unit 114 can perform various types of signal processing, such as noise reduction processing and grayscale correction processing.

[0093] The control unit 113 is configured to control the various units of the imaging device 1. The control unit 113 can receive data such as clock signals and instruction operation modes supplied from an external source, and output data such as internal information about the imaging device 1. The control unit 113 is a control circuit and includes, for example, a timing generator configured to generate various timing signals.

[0094] The control unit 113 executes control of the pixel driving unit 105, the signal processing unit 112, etc., based on various timing signals (pulse signals, clock signals, etc.) generated by the timing generator. It should be noted that the control unit 113 and the processing unit 114 can be integrally configured.

[0095] The pixel driving unit 105, signal processing unit 112, control unit 113, and processing unit 114 can be disposed in one semiconductor substrate or disposed separately in multiple semiconductor substrates. All or some of the signal processing unit 112, control unit 113, and processing unit 114 can be integrally formed.

[0096] Figure 2 This is a diagram illustrating an example of the pixel configuration of an imaging apparatus according to a first embodiment. The pixel P of the imaging apparatus 1 includes a photoelectric conversion unit 12, a lens 31, and a filter 32. It should be noted that, as... Figure 2 As shown, the incident direction of light from the subject is the Z-axis, the left-right direction of the plane of the paper perpendicular to the Z-axis is the X-axis, and the up-down direction of the plane of the paper perpendicular to both the Z-axis and X-axis is the Y-axis. In the following figures, sometimes it can be based on... Figure 2 Use the arrow direction in the diagram to write the direction.

[0097] The pixel P of the imaging device 1 may include a plurality of photoelectric conversion units 12 (in Figure 2 In the example shown, there are first photoelectric conversion units 12a, second photoelectric conversion units 12b, third photoelectric conversion units 12c, and fourth photoelectric conversion units 12d. For example, in each pixel P of the imaging device 1, a plurality of photoelectric conversion units 12 are arranged adjacent to each other.

[0098] exist Figure 2In the example shown, for instance, the second photoelectric conversion unit 12b is disposed adjacent to the first photoelectric conversion unit 12a. Furthermore, the fourth photoelectric conversion unit 12d is disposed adjacent to the third photoelectric conversion unit 12c. It can be said that a pixel including the first photoelectric conversion unit 12a, a pixel including the second photoelectric conversion unit 12b, a pixel including the third photoelectric conversion unit 12c, and a pixel including the fourth photoelectric conversion unit 12d are provided.

[0099] In the imaging device 1, for example, a lens 31 and a filter 32 are provided on the side where light from an optical system such as an imaging lens is incident. The lens 31 (lens unit) is a lens that focuses light and is an optical component called an on-chip lens. For example, a lens 31 is provided above the first to fourth photoelectric conversion units 12a to 12d for each pixel P or for multiple pixels P.

[0100] Light from the object being measured is incident on lens 31 via an optical system such as an imaging lens. Lens 31 guides the incident light to the photoelectric conversion unit 12 side of pixel P. The first to fourth photoelectric conversion units 12a to 12d of pixel P all perform photoelectric conversion on the light incident via lens 31 and filter 32.

[0101] The filter 32 is configured to selectively allow light of a specific wavelength range in the incident light to pass through. The filter 32 is an RGB color filter, a filter that allows infrared light to pass through, etc. For example, a filter 32 is provided above the first to fourth photoelectric conversion units 12a to 12d for each pixel P or for multiple pixels P.

[0102] As an example, the plurality of pixels P provided in the pixel unit 100 of the imaging device 1 include pixels (R pixels) provided with a filter 32 that allows red light (R) to pass through, pixels (G pixels) provided with a color filter 32 that allows green light (G) to pass through, and pixels (B pixels) provided with a filter 32 that allows blue light (B) to pass through. In the pixel unit 100, the plurality of R pixels, the plurality of G pixels, and the plurality of B pixels are repeatedly arranged.

[0103] For example, R pixels, G pixels, and B pixels are arranged in a Bayer array. The R pixels, G pixels, and B pixels can generate pixel signals with R components, G components, and B components, respectively. Imaging device 1 is able to acquire the R, G, and B pixel signals. It should be noted that the configuration of pixel P is not limited to the above example, and any other configuration can be set.

[0104] As an example, each of the R pixels, G pixels, and B pixels can be configured in a 2×2 pixel unit. In the pixel unit 100, for example, four adjacent R pixels, four adjacent G pixels, and four adjacent B pixels can be repeatedly configured. It can be said that each of the R pixels, G pixels, and B pixels is periodically configured in a 2x2 array.

[0105] The color filter 32 provided in pixel P of pixel unit 100 is not limited to a primary color (RGB) filter, but can also be a complementary color filter such as cyan (Cy), magenta (Mg), and yellow (Ye). A filter corresponding to white (W) can be provided, that is, a filter that allows light to pass through all wavelength regions of the incident light. Filter 32 can also be a filter that allows infrared light to pass through.

[0106] It should be noted that in the imaging device 1, the filter 32 can be omitted as needed. All or some pixels P of the imaging device 1 may not have the filter 32. For example, pixels that receive white (W) light and perform photoelectric conversion may not have the filter 32.

[0107] In the imaging device 1, for example, a lens 31 may be provided for each of the four photoelectric conversion units 12 (first to fourth photoelectric conversion units 12a to 12d). In the imaging device 1, light that has passed through different regions of an optical system such as an imaging lens is received by the first to fourth photoelectric conversion units 12a to 12d, and pupil segmentation is performed.

[0108] For example, the imaging device 1 can generate a signal based on the charge converted by the first photoelectric conversion unit 12a (first pixel signal), a signal based on the charge converted by the second photoelectric conversion unit 12b (second pixel signal), a signal based on the charge converted by the third photoelectric conversion unit 12c (third pixel signal), and a signal based on the charge converted by the fourth photoelectric conversion unit 12d (fourth pixel signal).

[0109] Phase difference data (phase difference information) can be obtained by using the signals of the first to fourth pixels. Phase difference autofocus (AF) can be performed by using the phase difference data. Pixels P (such as R pixels, G pixels, and B pixels) of imaging device 1 are pixels that can be used for phase difference detection and can be referred to as phase difference pixels (or phase difference detection pixels).

[0110] Figure 3 This is a diagram illustrating an example of the circuit configuration of a pixel in an imaging apparatus according to a first embodiment. The pixel P of the imaging apparatus 1 includes a plurality of photoelectric conversion units 12 (in... Figure 3 In the middle, the first to fourth photoelectric conversion units 12a~12d), and multiple transistors TR (in Figure 3In the middle, there are transistors TR1~TR4), floating diffusion section FD and readout circuit 20.

[0111] The photoelectric conversion unit 12 is configured to receive light and generate a signal. The photoelectric conversion unit 12 is a light receiver (light receiving element) and is configured to generate electrical charge through photoelectric conversion. Figure 3 In the example shown, the first photoelectric conversion unit 12a, the second photoelectric conversion unit 12b, the third photoelectric conversion unit 12c, and the fourth photoelectric conversion unit 12d are all photodiodes (PDs).

[0112] The first photoelectric conversion unit 12a, the second photoelectric conversion unit 12b, the third photoelectric conversion unit 12c, and the fourth photoelectric conversion unit 12d all convert incident light into electrical charge. Each of the first to fourth photoelectric conversion units 12a to 12d can perform photoelectric conversion and generate an electrical charge based on the amount of light received.

[0113] Transistor TR (in) Figure 3 In this configuration, transistors TR1, TR2, TR3, and TR4 are transfer transistors configured to transfer the charge photoelectrically converted by the photoelectric conversion unit 12 to the floating diffusion unit FD. Transistor TR electrically connects or disconnects the photoelectric conversion unit 12 and the floating diffusion unit FD. Figure 3 In the example shown, transistors TR1 to TR4 are controlled by different signals.

[0114] Transistor TR1 is controlled by signal STR1 and electrically connects or disconnects the first photoelectric conversion unit 12a and the floating diffusion unit FD. Transistor TR1 can transfer the charge that has been photoelectrically converted and accumulated in the first photoelectric conversion unit 12a to the floating diffusion unit FD.

[0115] Transistor TR2 is controlled by signal STR2 and electrically connects or disconnects the second photoelectric conversion unit 12b and the floating diffusion unit FD. Transistor TR2 can transfer the charge that has been photoelectrically converted and accumulated in the second photoelectric conversion unit 12b to the floating diffusion unit FD.

[0116] Transistor TR3 is controlled by signal STR3 and electrically connects or disconnects the third photoelectric conversion unit 12c and the floating diffusion unit FD. Transistor TR3 can transfer the charge that has been photoelectrically converted and accumulated in the third photoelectric conversion unit 12c to the floating diffusion unit FD.

[0117] Furthermore, transistor TR4 is controlled by signal STR4 and electrically connects or disconnects the fourth photoelectric conversion unit 12d and the floating diffusion unit FD. Transistor TR4 can transfer the charge that has been photoelectrically converted and accumulated in the fourth photoelectric conversion unit 12d to the floating diffusion unit FD.

[0118] The floating diffuser FD is an accumulation unit and is configured to accumulate the transferred charge. The floating diffuser FD can accumulate the charge converted by the photoelectric conversion unit 12. The floating diffuser FD can also be referred to as a holding unit configured to hold the transferred charge. The floating diffuser FD accumulates the transferred charge and converts the charge into voltage according to the capacitance of the floating diffuser FD.

[0119] The readout circuit 20 is configured to output a signal based on charge generated by photoelectric conversion. The readout circuit 20 is used to output a first pixel signal based on the charge generated by the first photoelectric conversion unit 12a, a second pixel signal based on the charge generated by the second photoelectric conversion unit 12b, a third pixel signal based on the charge generated by the third photoelectric conversion unit 12c, and a fourth pixel signal based on the charge generated by the fourth photoelectric conversion unit 12d.

[0120] Furthermore, the readout circuit 20 is configured to output a pixel signal based on the charge obtained by adding the charges photoelectrically converted by the first to fourth photoelectric conversion units 12a-12d. For example, the readout circuit 20 can read out a pixel signal based on the charge obtained by adding the charges from two or more photoelectric conversion units 12.

[0121] As an example, such as Figure 3 As shown, the readout circuit 20 includes a transistor AMP, a transistor SEL, and a transistor RST. The transistor AMP is configured to generate and output a signal based on the charge accumulated in the floating diffuser FD. The transistor AMP is an amplifying transistor and can generate and output a signal based on the charge converted by the photoelectric conversion unit 12.

[0122] like Figure 3 As shown, the gate of transistor AMP is electrically connected to the floating diffuser FD, and the voltage converted by the floating diffuser FD is input to the gate of transistor AMP. The drain of transistor AMP is connected to, for example, the supplied power supply voltage (in... Figure 3 In the example shown, the power supply line is the power supply voltage (VDD).

[0123] The source of transistor AMP is connected to signal line VSL via transistor SEL. Transistor AMP is configured to generate a signal based on the charge accumulated in the floating diffuser FD, i.e., a signal based on the voltage of the floating diffuser FD, and output the generated signal to signal line VSL.

[0124] Transistors (SELs) are configured to control the signal output of pixels. For example, as in... Figure 3As shown in the example, transistor SEL is electrically connected in series with transistor AMP. Transistor SEL is controlled by signal SSEL and is configured to output a signal from transistor AMP to signal line VSL. Transistor SEL is a selection transistor and can control the output timing of the pixel signal.

[0125] The transistor SEL is configured to output a signal based on the charge converted by the photoelectric conversion unit 12. The transistor SEL can output the pixel signal of pixel P (such as the first to fourth pixel signals) to the signal line VSL. It should be noted that the transistor SEL can be electrically connected between the power supply line supplied with power voltage VDD and the transistor AMP. Furthermore, the transistor SEL can be omitted if necessary.

[0126] The transistor RST is configured to reset the voltage of the floating diffuser FD. Figure 3 In the example shown, transistor RST is electrically connected to the power line supplied with the power supply voltage VDD and is configured to reset the charge of pixel P. Transistor RST is a reset transistor.

[0127] Transistor RST is controlled by signal SRST and can reset the charge accumulated in the floating diffuser FD and reset the potential of the floating diffuser FD. Transistor RST is electrically connected to the power supply line and the floating diffuser FD, and can discharge the charge accumulated in the floating diffuser FD. It should be noted that transistor RST can discharge the charge accumulated in the photoelectric conversion section 12 via transistor TR.

[0128] Figure 4A This is a diagram illustrating another example of the circuit configuration of the pixels in the imaging apparatus according to the first embodiment. (As in...) Figure 4A As shown in the example, the readout circuit 20 may include a transistor FDG. For example, the transistor FDG is configured to electrically connect the floating diffuser FD and the transistor RST. For example, the transistor FDG is controlled by a signal SFDG and electrically connects or disconnects the floating diffuser FD and the transistor RST.

[0129] When transistor FDG enters the on state, the capacitance added to the floating diffuser FD of pixel P increases, and the conversion efficiency (gain) when charge is converted into voltage is switched. Transistor FDG is a switching transistor used to set the conversion efficiency. Transistor FDG can switch the capacitance connected to the gate of transistor AMP to change the conversion efficiency.

[0130] Transistor FDG can be electrically connected in series with transistor RST, or it can be electrically connected in parallel with transistor RST. As... Figure 4BAs shown in the example, transistor FDG can be configured to electrically connect the floating diffuser FD and capacitor element C1. For example, transistor FDG is controlled by signal SFDG and electrically connects or disconnects the floating diffuser FD and capacitor element C1. By switching the connection state of capacitor element C1, the conversion efficiency can be changed.

[0131] The aforementioned transistors, namely transistor TR (transfer transistor), transistor AMP (amplifier transistor), transistor SEL (select transistor), transistor RST (reset transistor), and transistor FDG (switching transistor), are each, for example, MOS transistors with gate, source, and drain terminals.

[0132] exist Figure 3 In the examples shown, transistors TR1~TR4, transistor AMP, transistor SEL, transistor RST, and transistor FDG all include NMOS transistors. It should be noted that the transistors of pixel P can include PMOS transistors. The transistors of pixel P can be constructed as 3D transistors, such as FinFETs.

[0133] As in Figure 5A or Figure 5B As shown in the example, transistor RST and transistor AMP can be electrically connected to different power supply lines. For example, the drain of transistor AMP can be electrically connected to the power supply line supplied with power supply voltage VDD1, and the drain of transistor RST can be electrically connected to the power supply line supplied with power supply voltage VDD2. The drain potentials of transistor RST and transistor AMP can be controlled independently.

[0134] The pixel driving unit 105 of the imaging device 1 (see reference) Figure 1 The control signal is supplied to the gate of transistors TR1~TR4, SEL, RST and FDG of each pixel P via the control line Lread, so that the transistors enter the on state (conductive state) or the off state (non-conductive state).

[0135] As an example, the multiple control lines Lread provided for each pixel row of the imaging device 1 include wiring for transmitting signal STR1 to control transistor TR1, wiring for transmitting signal STR2 to control transistor TR2, wiring for transmitting signal STR3 to control transistor TR3, wiring for transmitting signal STR4 to control transistor TR4, etc.

[0136] In addition, the multiple control lines Lread include, for example, wiring for transmitting the signal SSEL to control the transistor SEL, wiring for transmitting the signal SRST to control the transistor RST, wiring for transmitting the signal SFDG to control the transistor FDG, etc.

[0137] The pixel driving unit 105 controls the on / off state of transistors TR1~TR4, transistor SEL, transistor RST, transistor FDG, etc. The pixel driving unit 105 controls the readout circuit 20 of each pixel P, thereby causing each pixel P to output a pixel signal to the signal line VSL. The pixel driving unit 105 can perform control to read the pixel signal of each pixel P to the signal line VSL.

[0138] It should be noted that the imaging device 1 may be configured such that multiple pixels P share a single readout circuit 20. For example, in the imaging device 1, the readout circuit 20 may be provided for multiple pixels P. The readout circuit 20 may be provided for multiple pixels P, and the multiple pixels P may share a single readout circuit 20. As an example, a 2×2 pixel consisting of four adjacent pixels P may share a single readout circuit 20.

[0139] Figure 6 This is a diagram illustrating an example of the planar configuration of pixels in an imaging apparatus according to a first embodiment. Figure 7 This is a diagram illustrating an example of the cross-sectional configuration of the pixels of an imaging device according to a first embodiment. Figure 7 It shows Figure 6 The image shows an example of the composition of pixels along line A-A'.

[0140] Each pixel P of the imaging device 1 has, for example Figure 6 and Figure 7 The structure shown is as follows. Pixel P includes first to fourth photoelectric conversion units 12a~12d, transistors TR1~TR4, floating diffusion unit FD, semiconductor region 35a, and semiconductor region 35b.

[0141] Imaging device 1 includes a substrate 201 having a semiconductor layer 101. Substrate 201 includes a semiconductor substrate such as a silicon (Si) substrate. It should be noted that substrate 201 (substrate) can be made of silicon-on-insulator (SOI) substrate, silicon-germanium (SiGe) substrate, other compound semiconductor materials, etc. Figure 6 and Figure 7 In the example shown, substrate 201 includes semiconductor layer 101 and wiring layer 111.

[0142] like Figure 7As shown, semiconductor layer 101 has surfaces 11S1 and 11S2 that face each other. Surface 11S2 is the surface opposite to surface 11S1. Surface 11S1 of semiconductor layer 101 is, for example, a device forming surface on which elements such as transistors are formed. Surface 11S1 of semiconductor layer 101 is provided with a gate electrode, a gate insulating film (such as a gate oxide film), etc. Surface 11S2 of semiconductor layer 101 is, for example, a light receiving surface (light incident surface).

[0143] In the semiconductor layer 101, a plurality of photoelectric conversion units 12 (photoelectric conversion elements) are provided along surfaces 11S1 and 11S2 of the semiconductor layer 101. The photoelectric conversion units 12 may be referred to as photoelectric conversion layers. For example, a plurality of first to fourth photoelectric conversion units 12a to 12d are embedded in the semiconductor layer 101. The first to fourth photoelectric conversion units 12a to 12d are provided between surfaces 11S1 and 11S2 of the semiconductor layer 101.

[0144] like Figure 7 As shown, semiconductor layer 101 includes a well 25. Well 25 is, for example, a p-type semiconductor region and is a p-type well (p-well). Figure 6 and Figure 7 In the example shown, the semiconductor layer 101 is provided with a well 25, which serves as a p-type well region. The first to fourth photoelectric conversion sections 12a to 12d all include semiconductor regions, such as n-type semiconductor regions disposed within the well 25.

[0145] exist Figure 6 In the example shown, the first photoelectric conversion unit 12a and the second photoelectric conversion unit 12b are arranged in the semiconductor layer 101 along the X-axis. Furthermore, the first photoelectric conversion unit 12a and the third photoelectric conversion unit 12c are arranged in the semiconductor layer 101 along the Y-axis. The third photoelectric conversion unit 12c and the fourth photoelectric conversion unit 12d are arranged in the semiconductor layer 101 along the X-axis. Furthermore, the second photoelectric conversion unit 12b and the fourth photoelectric conversion unit 12d are arranged in the semiconductor layer 101 along the Y-axis.

[0146] On the 11S1 side of the semiconductor layer 101, transistors TR1 to TR4, a floating diffusion section FD, a pixel transistor 30, a semiconductor region 35a, and a semiconductor region 35b are provided. The floating diffusion section FD includes, for example, an n-type semiconductor region. The pixel transistor 30 is, for example, the transistor in the readout circuit 20.

[0147] Pixel transistor 30 serves as transistor AMP, transistor SEL, transistor FDG, transistor RST, etc. In some pixels P, pixel transistor 30 may be a dummy transistor. Readout circuitry 20 may include a dummy transistor as pixel transistor 30. It should be noted that the shape of pixel transistor 30 is not limited to... Figure 6The example shown can be modified appropriately.

[0148] Transistors TR1 to TR4 each include a gate VG and a gate insulating film. Transistors TR1 to TR4 have, for example, a vertical gate structure. Each gate VG of transistors TR1 to TR4 is a gate electrode and is made of, for example, polysilicon (Poly-Si). At least corresponding portions of the gate VG and the gate insulating film are disposed within the semiconductor layer 101.

[0149] For example, at least corresponding portions of the gate VG and the gate insulating film are embedded in the semiconductor layer 101. Transistors TR1 to TR4 can be referred to as vertical transistors. Corresponding portions of the gate VG and the gate insulating film can be configured to be buried in the semiconductor layer 101. It should be noted that the gate VG and the gate insulating film can be collectively referred to as the gate.

[0150] As an example, the gate VG of transistor TR1 and the gate insulating film are formed in the semiconductor layer 101 such that they reach the first photoelectric conversion section 12a. For example, the gate VG of transistor TR1 extends from the surface 11S1 of semiconductor layer 101 into the interior of semiconductor layer 101 and is disposed in the region of the first photoelectric conversion section 12a.

[0151] As an example, the gate VG of transistor TR2 and the gate insulating film are formed in the semiconductor layer 101 such that they reach the second photoelectric conversion section 12b. For example, the gate VG of transistor TR2 extends from the surface 11S1 of semiconductor layer 101 into the interior of semiconductor layer 101 and is disposed in the region of the second photoelectric conversion section 12b.

[0152] As an example, the gate VG of transistor TR3 and the gate insulating film are formed in the semiconductor layer 101 such that they reach the third photoelectric conversion section 12c. For example, the gate VG of transistor TR3 extends from the surface 11S1 of semiconductor layer 101 into the interior of semiconductor layer 101 and is disposed in the region of the third photoelectric conversion section 12c.

[0153] Furthermore, as an example, the gate VG and gate insulating film of transistor TR4 are formed in the semiconductor layer 101 such that they reach the fourth photoelectric conversion section 12d. For example, the gate VG of transistor TR4 extends from the surface 11S1 of semiconductor layer 101 into the interior of semiconductor layer 101 and is disposed in the region of the fourth photoelectric conversion section 12d.

[0154] The gates (VG) of transistors TR1 to TR4 are made of, for example, polysilicon. The gates (VG) can be made of metallic materials or metal compounds. The gates (VG) can contain materials such as tungsten (W), titanium nitride (TiN), or tantalum nitride (TaN). It should be noted that sidewalls can be disposed on the sides of the gate electrode.

[0155] For example, the gate insulating film comprises a single-layer film of one of materials such as silicon oxide (SiO), silicon oxynitride (SiON), and hafnium oxide (HfO), or a multilayer film comprising two or more of these materials. The gate insulating film can be formed using a high-dielectric-constant material with a higher dielectric constant than silicon oxide, such as a hafnium-based insulating film.

[0156] It should be noted that each of transistors TR1 to TR4 can have a planar gate structure. For example, each of transistors TR1 to TR4 can be constructed as a planar transistor.

[0157] Imaging device 1 includes a pixel separation region 91, which is a separation region (separation portion) disposed around pixel P. The pixel separation region 92 is made, for example, using a groove (recess). Figure 7 In the example shown, the pixel separation region 91 is configured to extend through the semiconductor layer 101.

[0158] Pixel separation regions 91 are disposed in the semiconductor layer 101 between a plurality of adjacent pixels P to separate pixels P (or photoelectric conversion units 12). At least a portion of the pixel separation regions 91 is disposed at the boundary between adjacent pixels P. It can be said that a pixel P has a structure in which pixel P is divided by pixel separation regions 92.

[0159] The pixel separation region 91 has, for example, a full trench isolation (FTI) structure and is formed to extend through the semiconductor layer 101. Figure 6 and Figure 7 In the example shown, the pixel separation region 91 is configured to surround transistors TR1~TR4, floating diffusion section FD, semiconductor regions 35a and 35b, etc.

[0160] For example, in a planar diagram, the pixel separation region 91 is formed as a lattice surrounding the first to fourth photoelectric conversion sections 12a to 12d of each pixel P (see reference). Figure 2 and Figure 6 (etc.). The pixel separation region 91 can be referred to as the inter-pixel separation section or inter-pixel separation wall.

[0161] As an example, an insulating film (insulator), such as an oxide film (e.g., a silicon oxide film) or a nitride film (e.g., a silicon nitride film), is disposed within the trench of the pixel separation region 91. Polysilicon, metallic materials, other insulating materials, etc., may be embedded in the pixel separation region 91. Furthermore, the pixel separation region 91 may have voids (cavities).

[0162] The pixel separation region 91 can be supplied with a predetermined potential (voltage). The pixel separation region 91 includes, for example, trenches filled with conductive material, and is supplied with a negative bias voltage via wirings, vias, etc., in the wiring layer. Therefore, the occurrence of dark current can be suppressed.

[0163] Each pixel P of the imaging device 1 is provided with multiple separation regions 92 (in Figure 6 In the example shown, separation regions 92a, 92b, 92c, and 92d are separated. For example, as in... Figure 6 As shown in the example, the separation region 92 is disposed between a plurality of adjacent photoelectric conversion units 12.

[0164] Separation region 92a is disposed in semiconductor layer 101 between adjacent first photoelectric conversion units 12a and second photoelectric conversion units 12b. Separation region 92b is disposed in semiconductor layer 101 between adjacent third photoelectric conversion units 12c and fourth photoelectric conversion units 12d. For example, as in Figure 6 As shown in the example, the separation region 92b is set to be aligned with the separation region 92a in the Y-axis direction.

[0165] Separation region 92c is disposed in semiconductor layer 101 between adjacent first photoelectric conversion unit 12a and third photoelectric conversion unit 12c. Separation region 92d is disposed in semiconductor layer 101 between adjacent second photoelectric conversion unit 12b and fourth photoelectric conversion unit 12d. For example, as in Figure 6 As shown in the example, the separation region 92d is set to be aligned with the separation region 92c in the X-axis direction.

[0166] Separation regions 92a, 92b, 92c, and 92d are formed using, for example, trenches (grooves) and have a shallow trench isolation (STI) structure. As an example, separation regions 92a-92d are provided from the surface 11S1 side of semiconductor layer 101 to a point between surfaces 11S1 and 11S2 of semiconductor layer 101. It should be noted that separation regions 92a-92d can be provided to penetrate semiconductor layer 101.

[0167] Separation regions 92a and 92b have, for example, shapes extending in the Y-axis direction in a planar view. Furthermore, separation regions 92c and 92d have, for example, shapes extending in the X-axis direction in a planar view. (As in...) Figure 6 As shown in the example, separation regions 92a-92d and pixel separation region 91 are formed continuously and integrally. Each of separation regions 92a and 92b can be referred to as a structural portion protruding from pixel separation region 91 toward the center of pixel P.

[0168] As an example, an insulating film, such as an oxide film (e.g., a silicon oxide film) or a nitride film (e.g., a silicon nitride film), is disposed within the respective trenches of the separation regions 92a-92d. Polycrystalline silicon, metallic materials, other insulating materials, etc., may be embedded in the separation regions 92a-92d. It should be noted that the separation regions 92a-92d may have voids (cavities).

[0169] Separation regions 92c and 92d can be configured to have different dimensions (length, area, etc.) than separation regions 92a and 92b. For example, imaging device 1 has a configuration in which the corresponding lengths of separation regions 92c and 92d extending in the horizontal direction (X-axis direction) are different from the corresponding lengths of separation regions 92a and 92b extending in the vertical direction (Y-axis direction).

[0170] For example, as in Figure 6 As shown in the example, the length of separation region 92c in the X-axis direction is less than the length of separation region 92a (or separation region 92b) in the Y-axis direction. Furthermore, the length of separation region 92d in the X-axis direction may be less than the length of separation region 92a (or separation region 92b) in the Y-axis direction.

[0171] Furthermore, the imaging device 1 is provided with a separation region 93. The separation region 93 is made using, for example, trenches and has an STI structure. As an example, an insulating film such as a silicon oxide film or a silicon nitride film is disposed within the trench of the separation region 93. The separation region 93 is disposed on the surface 11S1 side of the semiconductor layer 101 and separates the components.

[0172] Separation regions 93 are formed between pixel transistor 30 and floating diffuser FD, between pixel transistor 30 and transistor TR, and between transistor TR and semiconductor regions 35a and 35b, etc. It should be noted that separation regions 93 may include semiconductor regions (p-type semiconductor regions or n-type semiconductor regions) formed by ion implantation.

[0173] Semiconductor regions 35a and 35b are both semiconductor regions having the same conductivity type as the well 25, and are disposed on the surface 11S1 side of the semiconductor layer 101. Semiconductor regions 35a and 35b are disposed in the well 25 and are electrically connected to the well 25. Each of semiconductor regions 35a and 35b is, for example, a p-type semiconductor region disposed within the semiconductor layer 101, and is a region formed using p-type impurities.

[0174] For example, such as Figure 6As shown, semiconductor region 35a is disposed between the floating diffusion section FD and the separation region 92c. Furthermore, semiconductor region 35b is disposed between the floating diffusion section FD and the separation region 92d. Semiconductor regions 35a and 35b can be configured to sandwich a portion of the floating diffusion section FD between them.

[0175] For example, the impurity concentrations of semiconductor regions 35a and 35b are both higher than the impurity concentration of well 25, and they become p+ type semiconductor regions. Semiconductor regions 35a and 35b, being p+ regions, can be referred to as p+ type diffusion regions and p+ type conductive regions, respectively. Semiconductor region 35a is electrically connected to contact 50a.

[0176] Semiconductor region 35b is electrically connected to contact portion 50b. Contact portions 50a and 50b are disposed in wiring layer 111 of substrate 201. For example, contact portion 50a is disposed on the upper part of semiconductor region 35a in wiring layer 111, and contact portion 50b is disposed on the upper part of semiconductor region 35b in wiring layer 111.

[0177] Both contact portions 50a and 50b are made of a conductive material such as tungsten (W). For example, contact portions 50a and 50b are formed by embedding (filling) conductive material in contact holes. It should be noted that contact portions 50a and 50b can be made of metallic materials such as aluminum (Al) or copper (Cu), or other materials.

[0178] The regions of the well 25 electrically connected to the semiconductor regions 35a and 35b are supplied with a predetermined potential (voltage) through wiring of the wiring layer 111, contacts 50a and 50b, etc. Contacts 50a and 50b are well contacts, and the semiconductor regions 35a and 35b can be referred to as well contact regions. It should be noted that the semiconductor region 35a (or semiconductor region 35b) and the contact 50a (or contact 50b) together can be referred to as the well contact region.

[0179] For example, contact portions 50a and 50b and semiconductor regions 35a and 35b are provided for each pixel P. Figure 6 In the example shown, the semiconductor region 35a and the contact portion 50a are arranged correspondingly to the regions of the first photoelectric conversion unit 12a and the third photoelectric conversion unit 12c. Furthermore, the semiconductor region 35b and the contact portion 50b are arranged correspondingly to the regions of the second photoelectric conversion unit 12b and the fourth photoelectric conversion unit 12d.

[0180] For example, semiconductor regions 35a and 35b are electrically connected to a reference potential line within wiring layer 111 via contacts 50a and 50b, and a reference potential is applied to semiconductor regions 35a and 35b and well 25. As an example, a GND potential (ground potential) is applied to semiconductor regions 35a and 35b and well 25 via contacts 50a and 50b.

[0181] Imaging device 1 may include, for example Figure 6 The overflow path 70 is shown. For example, the overflow path 70 is provided between a plurality of adjacent photoelectric conversion units 12. The overflow path 70 is a region formed using impurities, such as a p-type (or n-type) semiconductor region. As in Figure 6 As shown in the example, the overflow path 70 is formed between multiple separation regions 92 and adjacent to multiple photoelectric conversion units 12.

[0182] An overflow path 70 may be formed in the semiconductor layer 101 between the first to fourth photoelectric conversion sections 12a-12d. For example, the overflow path 70 may be disposed below the floating diffusion section FD of the semiconductor layer 101 and in contact with the first to fourth photoelectric conversion sections 12a-12d. In the semiconductor layer 101, separation regions 92a-92d are configured to sandwich the overflow path 70 between them.

[0183] In the imaging apparatus 1, an overflow path 70 is provided, allowing the overflowed charge to be transferred (moved) between the first to fourth photoelectric conversion units 12a-12d. For example, even if a charge exceeding the amount of charge (saturation charge) configured to accumulate in one photoelectric conversion unit 12 is generated, the overflowed charge can be accumulated in other photoelectric conversion units 12. A signal based on the charge photoelectrically converted by the multiple photoelectric conversion units 12 can be obtained.

[0184] In the imaging apparatus 1 according to this embodiment, separation region 92c and separation region 92a (or separation region 92b) are configured to have different dimensions from each other. Furthermore, separation region 92d and separation region 92a (or separation region 92b) are configured to have different dimensions from each other. For example, among separation regions 92a to 92d, separation region 92c and separation region 92d have relatively smaller lengths.

[0185] In imaging device 1, for example, as in Figure 6 As shown in the example, the length of the separation region 92c extending in the X-axis direction is shorter than the length of the separation region 92a (or separation region 92b) extending in the Y-axis direction. Furthermore, the length of the separation region 92d extending in the X-axis direction is shorter than the length of the separation region 92a (or separation region 92b) extending in the Y-axis direction.

[0186] Imaging device 1 is configured in this way, thereby increasing the area of ​​the region in pixel P where contact areas, transistors, etc., are disposed. Figure 6 In the example shown, semiconductor region 35a is disposed between separation region 92c and floating diffusion section FD. Furthermore, semiconductor region 35b is disposed between separation region 92d and floating diffusion section FD.

[0187] In the imaging device 1, contact regions (semiconductor regions 35a and 35b) are disposed between relatively short, protruding separation regions 92 (e.g., separation regions 92c and 92d) and the floating diffuser FD, thereby increasing the size of the transistors disposed in the pixel P. Furthermore, it prevents a reduction in the number of transistors that can be disposed in the pixel P. For example, as in... Figure 6 As shown in the example, the area of ​​pixel transistor 30 can be increased.

[0188] The size of transistors such as transistors AMP in the readout circuit 20 can be increased, thereby suppressing noise from the pixel signal. Increasing the gate area of ​​transistors AMP or SEL can improve the stability characteristics of the signal line VSL of the output pixel signal. The imaging device 1 can achieve a suitable layout and has a structure conducive to miniaturization.

[0189] In the imaging apparatus 1, as described above, among the separation regions 92a to 92d located around the overflow path 70, the lengths of separation regions 92c and 92d are relatively small. Therefore, compared to photoelectric conversion units 12 adjacent in the horizontal direction, the movement of charge between photoelectric conversion units 12 adjacent in the vertical direction via the overflow path 70 is easier.

[0190] For example, the charge from the first photoelectric conversion unit 12a can be moved (overflowed) to the third photoelectric conversion unit 12c, which is vertically adjacent to the first photoelectric conversion unit 12a, instead of the second photoelectric conversion unit 12b, which is horizontally adjacent to the first photoelectric conversion unit 12a. Furthermore, the charge overflowing from the second photoelectric conversion unit 12b can be moved to the fourth photoelectric conversion unit 12d, instead of the first photoelectric conversion unit 12a.

[0191] The imaging device 1 can ensure the amount of signal charge in the first photoelectric conversion unit 12a and the third photoelectric conversion unit 12c, as well as the amount of signal charge in the second photoelectric conversion unit 12b and the fourth photoelectric conversion unit 12d. It can obtain the signal of the pixel according to the amount of incident light and can extend the dynamic range. For example, phase difference detection can be accurately performed using the first pixel signal (or the third pixel signal) and the second pixel signal (or the fourth pixel signal).

[0192] Furthermore, for example, phase difference detection can be performed by acquiring signals corresponding to the charges obtained by adding the charges photoelectrically converted by the first photoelectric conversion unit 12a and the charges photoelectrically converted by the third photoelectric conversion unit 12c, and signals corresponding to the charges obtained by adding the charges photoelectrically converted by the second photoelectric conversion unit 12b and the charges photoelectrically converted by the fourth photoelectric conversion unit 12d. In this embodiment, the reduction in the accuracy of phase difference detection and the reduction in AF performance can be suppressed.

[0193] Figure 8 This is a diagram illustrating an example layout of an imaging apparatus according to a first embodiment. For example, transistors TR1 to TR4 (transmission transistors) are electrically connected to different wirings in wiring layer 111, and their on or off states are controlled by different signals.

[0194] exist Figure 8 In the example shown, the wiring for transmitting signal STR1 is electrically connected to the gate VG of transistor TR1, and the wiring for transmitting signal STR2 is electrically connected to the gate VG of transistor TR2. Furthermore, the wiring for transmitting signal STR3 is electrically connected to the gate VG of transistor TR3, and the wiring for transmitting signal STR4 is electrically connected to the gate VG of transistor TR4.

[0195] Figure 9 This is a diagram illustrating an example of the configuration of pixel transistors in an imaging apparatus according to a first embodiment. Figure 9 A 2×2 pixel diagram is shown, in which four pixels P are set as pixels Pa~Pd. The other pixels P in imaging device 1 may also have the same... Figure 9 The structure shown is similar to the structure.

[0196] Each of the transistors, such as transistor AMP, transistor SEL, transistor FDG, and transistor RST in the readout circuit 20, is provided as pixel transistor 30 in pixels Pa~Pd, and is shared by multiple pixels P. Figure 9 In the example shown, the two pixels of pixels Pa and Pc, and the two pixels of pixels Pb and Pd, each share the readout circuit 20.

[0197] For example, as in Figure 9 As shown in the example, the imaging device 1 is provided with wiring L1. The individual floating diffusers FD of the plurality of pixels P sharing the readout circuit 20 are electrically connected to the transistors of the readout circuit 20 via wiring L1. Figure 9 In the example shown, the floating diffuser FD is electrically connected to the gate electrode of the transistor AMP via wiring L1.

[0198] [Functions and Effects]

[0199] The photodetector according to this embodiment includes: a semiconductor layer (semiconductor layer 101); a plurality of pixels (pixels P), including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region (pixel separation region 91) disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region (separation region 92a) disposed between adjacent first and second photoelectric conversion elements (e.g., first photoelectric conversion section 12a and second photoelectric conversion section 12b) in a first direction (e.g., the X-axis direction); a second separation region (separation region 92b) disposed between adjacent third and fourth photoelectric conversion elements (e.g., third photoelectric conversion section 12c and fourth photoelectric conversion section 12d) in the first direction; a third separation region (separation region 92c) disposed between adjacent first and third photoelectric conversion elements in a second direction (e.g., the Y-axis direction) intersecting the first direction; a fourth separation region (separation region 92d) disposed between adjacent second and fourth photoelectric conversion elements in the second direction; a floating diffusion section (floating diffusion section FD) disposed between the third and fourth separation regions; and a first region of a first conductivity type (semiconductor region 35a) disposed between the third separation region and the floating diffusion section.

[0200] In the light detection apparatus (imaging apparatus 1) according to this embodiment, a semiconductor region 35a, serving as a contact region, is disposed between the separation region 92c and the floating diffuser FD. Therefore, the imaging apparatus 1 can have a structure that facilitates pixel miniaturization. For example, the size of the pixel transistor can be increased, and the characteristics of the pixel transistor can be improved. A light detection apparatus with excellent performance can be realized.

[0201] Subsequently, variations of this disclosure will be described. In the following text, components similar to the embodiments described above are given the same reference numerals, and their descriptions are omitted accordingly.

[0202] (1-1. Variation Example 1)

[0203] Figure 10 This describes a configuration example of an imaging apparatus according to a variation 1 of the present disclosure. The lengths of the separation regions extending in the vertical direction (e.g., separation regions 92a and 92b) can be approximately equal to the lengths of the separation regions extending in the horizontal direction (e.g., separation regions 92c and 92d). For example, imaging apparatus 1 can have a configuration in which the length of each of separation regions 92a and 92b is approximately equal to the length of each of separation regions 92c and 92d.

[0204] As in Figure 10As shown in the example, the length of the separation region 92a (or separation region 92b) in the Y-axis direction can be approximately equal to the length of the separation region 92c (or separation region 92d) in the X-axis direction. By configuring the imaging device 1 in this way, it is expected that the saturation charge (Qs) of the photoelectric conversion unit 12 can be increased.

[0205] (1-2. Variation Example 2)

[0206] Figure 11 This describes a configuration example of the imaging apparatus according to Modification 2. Among the separation regions 92a-92d, the lengths of separation regions 92a and 92b can be less than the lengths of separation regions 92c and 92d. Compared to photoelectric conversion units 12 adjacent in the vertical direction, the movement of charge between photoelectric conversion units 12 adjacent in the horizontal direction via the overflow path 70 is easier.

[0207] As in Figure 11 As shown in the example, the length of the separation region 92a extending in the Y-axis direction can be shorter than the length of the separation region 92c (or separation region 92d) extending in the X-axis direction. Furthermore, the length of the separation region 92b extending in the Y-axis direction can be shorter than the length of the separation region 92c (or separation region 92d) extending in the X-axis direction.

[0208] In the imaging apparatus 1, the charge from the first photoelectric conversion unit 12a can be moved to the second photoelectric conversion unit 12b instead of the third photoelectric conversion unit 12c. Furthermore, the charge from the third photoelectric conversion unit 12c can be moved to the fourth photoelectric conversion unit 12d instead of the first photoelectric conversion unit 12a.

[0209] The signal charge levels in the first photoelectric conversion unit 12a and the second photoelectric conversion unit 12b, as well as in the third photoelectric conversion unit 12c and the fourth photoelectric conversion unit 12d, can be ensured. Pixel signals based on the amount of incident light can be obtained, and the dynamic range can be extended. For example, phase difference detection can be accurately performed using the first pixel signal (or the second pixel signal) and the third pixel signal (or the fourth pixel signal).

[0210] (1-3. Variation Example 3)

[0211] Figure 12 This is used to illustrate a configuration example of the imaging apparatus according to Modification 3. In the imaging apparatus 1, multiple gates VG (transmission gates) can be provided for each photoelectric conversion unit 12. For example, as in... Figure 12As shown in the example, two gates VG can be provided for one photoelectric conversion unit 12. Transistors TR1, TR2, TR3, and TR4 can be said to have a dual-gate structure. It can be said that two transport transistors with gates VG are provided for each photoelectric conversion unit 12. In this modified example, charge transport characteristics can be improved.

[0212] (1-4. Variation Example 4)

[0213] Figure 13 and Figure 14 This is used to illustrate a configuration example of the imaging apparatus according to Modification 4. The imaging apparatus 1 may include a separation region 94. As in... Figure 13 and Figure 14 As shown in the example, the separation region 94 is disposed around semiconductor region 35a and semiconductor region 35b on the surface 11S1 side of semiconductor layer 101. The separation region 94 may include, for example, semiconductor regions formed by ion implantation.

[0214] Figure 15 Another configuration example is used to illustrate the imaging device according to Modification 4. As in Figure 15 As shown in the example, the separation region 94 can be provided in the semiconductor layer 101 along the semiconductor regions 35a and 35b and the floating diffuser FD. The imaging device 1 is provided with the separation region 94, thereby reducing dark current.

[0215] (1-5. Variation Example 5)

[0216] Figure 16 This is used to illustrate the configuration example of the imaging apparatus according to Modification 5. The shape and arrangement of the pixel transistor 30 of pixel P can be appropriately changed. For example, as in Figure 16 As shown in the example, the gate of the pixel crystal 30 can have a ring shape (such as a quarter ring or a half ring shape).

[0217] This can increase the gate width of the pixel transistor 30 (such as a transistor AMP or a transistor SEL) and improve the gm (transconductance) of the pixel transistor 30. It can also improve stabilization characteristics (such as the settling time of the pixel signal).

[0218] Figure 17 This is used to illustrate another configuration example of the imaging apparatus according to Modification 5. Multiple pixel transistors 30 can be provided for each photoelectric conversion unit 12 (in... Figure 17In the example shown, pixel transistors 30a and 30b are used. For example, when transistors AMP and SEL are configured as pixel transistors 30a and 30b, the respective source electrodes (or drain electrodes) of transistors AMP and SEL can be integrally formed. This reduces the wiring connecting transistors AMP and SEL and improves the transistor's gm.

[0219] (1-6. Variation Example 6)

[0220] Figure 18 This is used to illustrate the configuration example of the imaging device according to Modification 6. For example... Figure 18 The example shown allows for the configuration of each of the transistors in the readout circuit 20, such as transistor AMP, transistor SEL, and transistor RST, along with wiring L1, for each pixel P. Wiring L1 connects to the floating diffuser FD and can be referred to as the FD wiring. Figure 18 In the example shown, the wiring L1, which serves as the FD wiring, can be made shorter, thereby improving the conversion efficiency when charge is converted into voltage.

[0221] Figure 19 This is used to illustrate another configuration example of the imaging apparatus according to Modification 6. Imaging apparatus 1 may have 2×2 pixels (in...) Figure 19 In this configuration, pixels P1 to Pd share a readout circuit 20. The imaging device 1 can generate a pixel signal based on the sum of the individual charges converted by the photoelectric conversion of multiple pixels. This can improve the signal-to-noise ratio and obtain a pixel signal with less noise.

[0222] (1-7. Variation Example 7)

[0223] Figure 20 This is used to illustrate the configuration example of the imaging device according to Modification 7. As in... Figure 20 As shown in the example, transistors TR1 and TR2 can be electrically connected to a shared wiring harness and controlled by the same control signal. Similarly, transistors TR3 and TR4 can be electrically connected to a shared wiring harness and controlled by the same control signal.

[0224] exist Figure 20 In the example shown, the wiring for transmitting signal STRa is electrically connected to the respective gates VG of transistors TR1 and TR2, and the wiring for transmitting signal STRb is electrically connected to the respective gates VG of transistors TR3 and TR4. In imaging apparatus 1, capacitance is added around transistors TR and separation region 92a (or separation region 92b) (sidewalls), which allows for an increase in the amount of saturated charge.

[0225] (1-8. Variation Example 8)

[0226] Figure 21 and Figure 22 This is used to illustrate the configuration example of the imaging device according to Modification 8. As in... Figure 21 or Figure 22 As shown in the example, the semiconductor region 35, serving as the contact area, can be disposed between multiple adjacent pixels P. At least a portion of the semiconductor region 35 can be disposed within the boundary between multiple adjacent pixels P. The semiconductor region 35 can be shared among multiple pixels P. For example, one semiconductor region 35 and one contact portion 50 can be provided for four photoelectric conversion units 12.

[0227] As in Figure 22 As shown in the example, for instance, a separation region 95 is disposed around the semiconductor region 35. As an example, the separation region 95 is formed using trenches and has an STI structure. For example, an insulating film, such as a silicon oxide film, is disposed within the trenches of the separation region 95. It should be noted that the separation region 95 may include a semiconductor region formed by ion implantation.

[0228] The photodetector according to this modification includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region. The first pixel includes a first separation region, a second separation region, a third separation region, a fourth separation region, a floating diffusion portion disposed between the third separation region and the fourth separation region, and a first region of a first conductivity type disposed between adjacent plurality of pixels.

[0229] In the imaging apparatus 1 according to this modified example, semiconductor regions 35 are disposed between adjacent pixels P. Therefore, semiconductor regions 35, which serve as well contact regions, can be shared among the multiple pixels P, and the area of ​​the region in which transistors are disposed in the pixels P can be increased. For example, the size of the pixel transistors 30 can be increased. Furthermore, the charge transport path in the pixels P can be extended, thereby improving charge transport efficiency.

[0230] (1-9. Variation Example 9)

[0231] Figure 23 and Figure 24 This describes a configuration example of the imaging apparatus according to Modified Example 9. In the imaging apparatus 1, the semiconductor region 35, which serves as the contact region, can be provided between the separation regions 92a to 92d. For example, one semiconductor region 35 can be provided for each of the four photoelectric conversion units 12. In this case, the area of ​​the region where the pixel transistors 30 are disposed can be increased. The size of the pixel transistors can be increased, and the characteristics of the pixel transistors can be improved.

[0232] In imaging apparatus 1, the floating diffuser FD or transistor TR can be disposed near the separation region 92c (or separation region 92d) having a relatively short length. Figure 23 In the example shown, the floating diffusion section FD is disposed between the separation region 92c and the semiconductor region 35, and between the separation region 92d and the semiconductor region 35.

[0233] For example, among the two floating diffuser sections FD, the left floating diffuser section VD is provided corresponding to the first photoelectric conversion section 12a and the third photoelectric conversion section 12c. Furthermore, the right floating diffuser section FD is provided corresponding to the second photoelectric conversion section 12b and the fourth photoelectric conversion section 12d.

[0234] like Figure 24 As shown, transistor TR can be disposed between the separation region 92c (or separation region 92d) and the semiconductor region 35. Figure 24 In the example shown, a portion of the gate VG of each transistor TR1 and TR3 is disposed between the separation region 92c and the semiconductor region 35. Furthermore, a portion of the gate VG of each transistor TR2 and TR4 is disposed between the separation region 92d and the semiconductor region 35.

[0235] Similarly, in the case of the imaging apparatus 1 according to this modified example, a suitable layout and a structure conducive to miniaturization can be achieved. By configuring the imaging apparatus 1 as described above, the charge transport path in the pixel P can be extended, thereby improving the charge transport efficiency.

[0236] (1-10. Variation Example 10)

[0237] Figures 25 to 27 This is used to illustrate a configuration example of the imaging apparatus according to Modification 10. The transistor TR (transfer transistor) can be disposed adjacent to the separation region 92c (or separation region 92d). Figure 25 and Figure 26 In the example shown, transistor TRa is disposed adjacent to separation region 92c. Transistor TRa is located between separation region 92c and floating diffuser FD.

[0238] The transistor TRa is a transport transistor with a gate VGa, and is provided for the first photoelectric conversion section 12a and the third photoelectric conversion section 12c. The transistor TRa is configured to transfer the charge photoelectrically converted by the first photoelectric conversion section 12a and the third photoelectric conversion section 12c to the floating diffusion section FD.

[0239] Transistor TRb is disposed adjacent to separation region 92d. Transistor TRb is located between separation region 92d and floating diffusion section FD. Transistor TRb is a transport transistor with gate VGb and is disposed for the second photoelectric conversion section 12b and the fourth photoelectric conversion section 12d. Transistor TRb is configured to transfer the charge photoelectrically converted by the second photoelectric conversion section 12b and the fourth photoelectric conversion section 12d to the floating diffusion section FD.

[0240] For example, as in Figure 26 As shown in the example, transistor TRa is configured to have a portion of its gate VGa in contact with separation region 92c. Furthermore, for example, transistor TRb is configured to have a portion of its gate VGb in contact with separation region 92d. It should be noted that the gate VGa of transistor TRa and the gate VGb of transistor TRb may not be in contact with separation regions 92c and 92d, respectively. As in Figure 27 As shown in the example, the semiconductor region 35 and the contact portion 50, which are the contact areas, can be provided on the light incident surface (light receiving surface) side, that is, on the surface 11S2 side of the semiconductor layer 101.

[0241] Figure 28 and Figure 29 This is used to illustrate another configuration example of the imaging apparatus according to Modification 10. The shape and configuration of transistors TRa and TRb are not limited to the above example and can be appropriately changed. For example, as Figure 28 As shown, the gate VGa of transistor TRa and the gate VGb of transistor TRb can each have a triangular shape in the planar view. Furthermore, the shape and configuration of the pixel transistor 30 are not limited to the examples described above. For example, as... Figure 29 As shown, the gate of the pixel transistor 30 can have a quadrilateral shape, a ring shape, etc.

[0242] <2. Second Implementation Plan>

[0243] The second embodiment of this disclosure will then be described. In the following text, elements similar to those in the above embodiments are given the same reference numerals, and their descriptions are omitted accordingly.

[0244] Figure 30 and Figure 31 This is a diagram illustrating an example of the planar configuration of pixels in an imaging apparatus according to a second embodiment of the present disclosure. In the imaging apparatus 1, multiple gates, for example, two gates VG, may be provided for each photoelectric conversion unit 12. Each transistor TR1 to TR4 includes, for example, two gates, and can be said to have a dual-gate structure. It can be said that two transmission transistors with gates VG are provided for each photoelectric conversion unit 12.

[0245] In each pixel P of the imaging device 1, for example, gates VG1a, VG1b, VG2a, VG2b, VG3a, VG3b, VG4a, and VG4b are disposed around the overflow path 70.

[0246] Gates VG1a and VG1b are disposed corresponding to the first photoelectric conversion unit 12a and are used to transfer charge. Gate VG1a is disposed adjacent to the overflow path 70 and the separation region 92c. Gate VG1b is disposed adjacent to the overflow path 70 and the separation region 92b. Gates VG1a and VG1b are controlled by different signals.

[0247] Gates VG2a and VG2b are disposed corresponding to the second photoelectric conversion unit 12b and are used to transfer charge. Gate VG2a is disposed adjacent to the overflow path 70 and the separation region 92d. Gate VG2b is disposed adjacent to the overflow path 70 and the separation region 92a. Gates VG2a and VG2b are controlled by different signals.

[0248] Gates VG3a and VG3b are disposed corresponding to the third photoelectric conversion unit 12c and are used to transfer charge. Gate VG3a is disposed adjacent to the overflow path 70 and the separation region 92c. Gate VG3b is disposed adjacent to the overflow path 70 and the separation region 92b. Gates VG3a and VG3b are controlled by different signals.

[0249] Furthermore, gates VG4a and VG4b are disposed corresponding to the fourth photoelectric conversion unit 12d for charge transfer. Gate VG4a is disposed adjacent to the overflow path 70 and the separation region 92d. Gate VG4b is disposed adjacent to the overflow path 70 and the separation region 92b. Gates VG4a and VG4b are controlled by different signals.

[0250] like Figure 31 As shown, for example, gate VG1a is electrically connected to and controlled by the wiring for transmitting signal STG1a. Gate VG1b is electrically connected to and controlled by the wiring for transmitting signal STG1b. Furthermore, gate VG2a is electrically connected to and controlled by the wiring for transmitting signal STG2a. Gate VG2b is electrically connected to and controlled by the wiring for transmitting signal STG2b.

[0251] Furthermore, gate VG3a is electrically connected to and controlled by the wiring for transmitting signal STG3a. Gate VG3b is electrically connected to and controlled by the wiring for transmitting signal STG3b. Similarly, gate VG4a is electrically connected to and controlled by the wiring for transmitting signal STG4a. Gate VG4b is also electrically connected to and controlled by the wiring for transmitting signal STG4b.

[0252] Gates VG1a to VG4b are controlled, for example, by the pixel driving unit 105. For instance, the pixel driving unit 105 generates signals STG1a, STG1b, STG2a, STG2b, STG3a, STG3b, STG4a, and STG4b, and supplies these signals to each pixel P via the control line Lread. Gates VG1a to VG4b can be controlled to be turned on or off by the signal voltage input to the pixel driving unit 105.

[0253] The pixel driving unit 105 can set the potential in the overflow path 70 by controlling the gates VG1a to VG4b disposed around the overflow path 70. For example, the potential of the overflow path 70 can be adjusted by controlling the voltage supplied to each of the gates VG1a to VG4b.

[0254] Figure 32 and Figure 33 This is a diagram illustrating an operational example of the imaging apparatus according to the second embodiment. For example, such as... Figure 32 As shown, the pixel driving unit 105 supplies voltage V1 to gates VG1a to VG4a, and supplies voltage V2, which is lower than voltage V1, to gates VG1b to VG4b via signals STG1b to STG4b. For example, both voltages V1 and V2 are negative voltages.

[0255] Voltage V1 is supplied to gates VG1a to VG4a via signals STG1a to STG4a. Furthermore, voltage V2, lower than V1, is supplied to gates VG1b to VG4b via signals STG1b to STG4b. In this state, gates VG1a to VG4a enter a state close to a relative ON state, and gates VG1b to VG4b enter a state close to a relative OFF state.

[0256] Therefore, as Figure 32 As illustrated by the middle arrow, the movement of charge between photoelectric conversion units 12 adjacent in the vertical direction via the overflow path 70 is easier than that between adjacent photoelectric conversion units 12 in the horizontal direction. For example, the charge photoelectrically converted by the first photoelectric conversion unit 12a can move (overflow) to the third photoelectric conversion unit 12c more easily than to the second photoelectric conversion unit 12b.

[0257] Furthermore, the charge converted by the second photoelectric conversion unit 12b can be moved to the fourth photoelectric conversion unit 12d more easily than that converted by the first photoelectric conversion unit 12a. The pixel driving unit 105 adjusts the output voltage to the gates VG1a to VG4b, thereby changing the potential distribution in the overflow path 70 and controlling the charge transport path.

[0258] In addition, for example, such as Figure 33 As shown, the pixel driving unit 105 can supply a voltage V3 to each of the gates VG1a to VG4b. The voltage V3 is, for example, a positive voltage. In this case, the gates VG1a to VG4b enter the ON state, which allows the respective charges converted by the first to fourth photoelectric conversion units 12a to 12d to be added together, and the pixel signal based on the charge obtained by the addition to be read out.

[0259] [Functions and Effects]

[0260] The photodetector according to this embodiment includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; a first gate and a second gate (e.g., gate VG1a and gate VG1b) corresponding to the first photoelectric conversion element and configured to allow charge transfer; and an overflow path disposed adjacent to the first, second, third, and fourth photoelectric conversion elements. The first gate is disposed adjacent to the overflow path and the third separation region. The second gate is disposed adjacent to the overflow path and the first separation region.

[0261] The light detection device (imaging device 1) according to this embodiment includes a gate VG1a disposed adjacent to the overflow path 70 and the separation region 92c, and a gate VG1b disposed adjacent to the overflow path 70 and the separation region 92a. This allows the imaging device 1 to perform potential control of the overflow path. A light detection device with excellent performance can be realized.

[0262] Subsequently, variations of this disclosure will be described. In the following text, components similar to the embodiments described above are given the same reference numerals, and their descriptions are omitted accordingly.

[0263] (2-1. Variation Example 11)

[0264] Figure 34 and Figure 35 Example of the configuration of an imaging apparatus according to a variation 11 of this disclosure. Figure 35 It shows Figure 34 The image shows an example of pixel configuration along line A-A'. Imaging device 1 may include a gate OFG (overflow gate) disposed corresponding to overflow path 70. The gate OFG is a gate electrode and is made using, for example, polysilicon (Poly-Si). It should be noted that the gate OFG and the gate insulating film can be collectively referred to as the gate.

[0265] For example, the gate OFG is disposed between the separation region 92c and the floating diffusion portion FD, and between the separation region 92d and the floating diffusion portion FD. The gate OFG is disposed, for example, within the semiconductor layer 101. (As in...) Figure 35 As shown in the example, the gate OFG can be located in the semiconductor layer 101 near the overflow path 70.

[0266] The pixel driving unit 105 of the imaging device 1 can set the potential in the overflow path 70 by controlling the gate OFG provided relative to the overflow path 70. For example, by controlling the voltage supplied to the gate OFG, the potential of the overflow path 70 can be adjusted, thereby enabling control of the charge transfer path.

[0267] (2-2. Variation Example 12)

[0268] Figures 36 to 39 This is used to illustrate the configuration example of the imaging apparatus according to Modification 12. As in... Figure 36 and Figure 37 As shown in the example, the gate OFG can be disposed on the light incident surface (light receiving surface) side, i.e., on the surface 11S2 side of the semiconductor layer 101. Furthermore, for example, as in... Figure 38 and Figure 39 As shown in the example, the gate OFG can be disposed between the separation regions 92a to 92d on the surface 11S2 side of the semiconductor layer 101.

[0269] Figure 40 and Figure 41 Another configuration example of the imaging apparatus according to Modification 12 is used to illustrate this. The imaging apparatus 1 may include an overflow path 70a disposed adjacent to the first photoelectric conversion unit 12a and the third photoelectric conversion unit 12c, and an overflow path 70b disposed adjacent to the second photoelectric conversion unit 12b and the fourth photoelectric conversion unit 12d.

[0270] For example, as in Figure 41As shown in the example, the gate OFG is formed stacked above the overflow paths 70a and 70b. The pixel driving unit 105 can control the voltage supplied to the gate OFG and form a charge path between the overflow paths 70a and 70b.

[0271] <3. Third Implementation Plan>

[0272] The third embodiment of this disclosure will then be described. In the following text, elements similar to those in the above embodiments are given the same reference numerals, and their descriptions are omitted accordingly.

[0273] Figure 42 This is a diagram illustrating an example of the planar configuration of pixels in an imaging apparatus according to a third embodiment of the present disclosure. In the imaging apparatus 1, separation regions 92 may be disposed at a certain distance from pixel separation regions 91. For example, among a plurality of separation regions 92, some separation regions 92 are configured to be separate from pixel separation regions 91.

[0274] exist Figure 42 In the example shown, separation regions 92a and 92b are both positioned at a certain distance from pixel separation region 91. Furthermore, separation regions 92c and 92d are positioned to contact pixel separation region 91. For example, as in... Figure 42 As shown in the example, separation regions 92a, 92b, 92c, and 92d can be formed continuously and set as a single unit.

[0275] The readout circuit 20 for each pixel P may include, for example, two amplifying transistors (transistor AMP1 and transistor AMP2), two reset transistors (transistor RST1 and transistor RST2), and two selection transistors (transistor SEL1 and transistor SEL2).

[0276] The transistors of the readout circuit 20 are disposed, for example, on the surface 11S1 side of the semiconductor layer 101. For example, the multiple transistors of the readout circuit 20 can be individually disposed in multiple active regions 80 (in...). Figure 42 In the example shown, active regions 80a and 80b are active regions.

[0277] In the pixel P of the imaging device 1, for example, transistors AMP1, SEL1, and RST1 are disposed in the active region 80b. Furthermore, transistors AMP2, SEL2, and RST2 are disposed in the active region 80a. It should be noted that the aforementioned semiconductor region 35 and contact portion 50, which serve as contact regions, are disposed, for example, on the light incident surface (light receiving surface) side, i.e., on the surface 11S2 side of the semiconductor layer 101.

[0278] For example, as in Figure 42As shown in the example, both active regions 80a and 80b have a concave shape. A portion of active region 80a is disposed between separation region 92a and pixel separation region 91, and a portion of active region 80b is disposed between separation region 92b and pixel separation region 91.

[0279] Transistor AMP1 is disposed, for example, between separation region 92b and pixel separation region 91. Furthermore, transistor AMP2 is disposed between separation region 92a and pixel separation region 91. Transistors RST1 and RST2 are configured to sandwich separation region 92c between them, and transistors SEL1 and SEL2 are configured to sandwich separation region 92d between them.

[0280] In the imaging apparatus 1 according to this embodiment, at least some of the multiple separation regions 92 are disposed at a certain distance from the pixel separation region 91. Therefore, the area of ​​the region (active regions 80a and 80b) in the pixel P where transistors are formed can be increased.

[0281] As in Figure 42 As shown in the example, for instance, active regions 80a and 80b, each with a recessed shape, are formed, which allows for an increase in the size of the transistors disposed in pixel P. For example, as in... Figure 42 As shown in the example, the area of ​​transistors AMP1 and AMP2 can be increased.

[0282] The size of the transistors (e.g., transistors AMP1 and AMP2) in the readout circuit 20 can be increased, thereby suppressing noise mixed with the pixel signal. By increasing the gate area of ​​transistors AMP1 and AMP2, noise mixed with the pixel signal can be suppressed. The imaging device 1 can achieve a suitable layout and has a structure conducive to miniaturization.

[0283] Furthermore, as in Figure 42 As shown in the example, the drain region (or source region) of the pixel transistor supplied with the power supply voltage VDD is disposed along a portion of the sidewall (side) of the pixel separation region 91 and the sidewall of the separation region 93 separating the elements. Therefore, dark current in the sidewalls of the pixel separation region 91 and the separation region 93 can be reduced.

[0284] [Functions and Effects]

[0285] The light detection device according to this embodiment includes: a semiconductor layer (semiconductor layer 101); a plurality of pixels (pixels P), each pixel including a photoelectric conversion element (photoelectric conversion unit 12) disposed in the semiconductor layer; a pixel separation region (pixel separation region 91) configured to surround the plurality of adjacent pixels; and a first separation region (e.g., separation region 92a) disposed between the plurality of adjacent pixels. The first separation region is disposed at a certain distance from the pixel separation region.

[0286] In the light detection apparatus (imaging apparatus 1) according to this embodiment, the separation region 92a is provided at a certain distance from the pixel separation region 91. Therefore, the imaging apparatus 1 can have a structure that facilitates pixel miniaturization. For example, the size of the pixel transistor can be increased and the characteristics of the pixel transistor can be improved. A light detection apparatus with excellent performance can be realized.

[0287] Subsequently, variations of this disclosure will be described. In the following text, components similar to the embodiments described above are given the same reference numerals, and their descriptions are omitted accordingly.

[0288] (3-1. Variation Example 13)

[0289] Figure 43 This is used to illustrate the configuration example of the imaging apparatus according to Modification 13. For example... Figure 43 In the example shown, the separation regions 92a~92d can be set at a certain distance from the pixel separation region 91. For example, as in... Figure 43 As shown in the example, the active region 80, on which transistors are formed, is configured to surround the separation regions 92a to 92d. The active region 80 may have a quadrilateral shape.

[0290] (3-2. Variation Example 14)

[0291] Figure 44 This is used to illustrate the configuration example of the imaging apparatus according to Modification 14. The number and arrangement of active regions 80 are not limited to the above example and can be appropriately changed. For example, the pixel P of the imaging apparatus 1 may be provided with more than three active regions 80 (e.g., six active regions 80). Transistors AMP, SEL, and RST may be provided in different active regions 80 from each other.

[0292] (3-3. Variation Example 15)

[0293] Figures 45 to 47 This is used to illustrate the configuration example of the imaging apparatus according to Modification 15. As in... Figures 45-47As shown in the example, the pixel transistor can have a ring-shaped shape (e.g., a quarter-ring or half-ring shape). By forming the transistor (e.g., transistor AMP) of the readout circuit 20 into a ring shape, the gate area of ​​the transistor AMP can be increased and noise interference into the pixel signal can be suppressed.

[0294] Figures 48 to 52 Another configuration example used to illustrate the imaging apparatus according to Modification 15. As in Figure 48 As shown in the example, the transistor AMP can be positioned along the pixel separation region 91. For example, the transistor AMP can be positioned from one end of the active region 80 to the other (from left to right). The transistor AMP can have a shape that extends into the sidewalls of the pixel separation region 91. The area of ​​the transistor AMP can be increased, thereby improving the signal quality of the pixel signal.

[0295] Furthermore, as in Figures 48-50 As shown in the example, the transistors of the readout circuit 20 can have a rounded quadrilateral shape in the plan view. Furthermore, as in... Figure 51 or Figure 52 As shown in the example, separation regions 92a-92d can be configured to contact pixel separation region 91. Semiconductor region 35, which serves as the contact region, can be provided, for example, between separation region 92c (or separation region 92d) and floating diffuser FD.

[0296] <4. Applicable Examples>

[0297] For example, the imaging device 1 described above can be applied to any type of electronic device with imaging capabilities, including camera systems such as digital cameras or camcorders, and mobile phones with imaging capabilities. Figure 53 A schematic configuration of the electronic device 1000 is shown.

[0298] The electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (digital signal processing unit) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, and they are connected to each other via a bus 1008.

[0299] Lens group 1001 captures incident light (image light) from the subject and forms an image on the imaging surface of imaging device 1. Imaging device 1 converts the amount of incident light that has formed an image on the imaging surface by lens group 1001 into an electrical signal in pixels and supplies it as a pixel signal to DSP circuit 1002.

[0300] The DSP circuit 1002 is a signal processing circuit that processes signals supplied from the imaging device 1. The DSP circuit 1002 outputs image data obtained by processing the signals supplied from the imaging device 1. The frame memory 1003 temporarily stores the image data processed by the DSP circuit 1002 in units of frames.

[0301] For example, the display unit 1004 includes a panel-type display device such as a liquid crystal panel or an organic electroluminescent (EL) panel, and records image data of moving or still images captured by the imaging device 1 on a recording medium such as a semiconductor memory or a hard disk.

[0302] The operation unit 1006 outputs operation signals for various functions of the electronic device 1000 according to the operation performed by the user. The power supply unit 1007 appropriately supplies various types of power to the DSP circuit 1002, frame memory 1003, display unit 1004, recording unit 1005 and operation unit 1006.

[0303] <5. Application Examples>

[0304] (Examples of applications involving moving objects)

[0305] The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein can be implemented as a device to be installed on any type of mobile body such as a car, electric car, hybrid electric car, motorcycle, bicycle, personal mobility device, airplane, unmanned aerial vehicle, ship or robot.

[0306] Figure 54 This is a block diagram illustrating a schematic configuration example of a vehicle control system, which is an example of a mobile body control system to which the technology is applicable according to the embodiments of this disclosure.

[0307] The vehicle control system 12000 includes multiple electronic control units interconnected via a communication network 12001. Figure 54 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a main system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and a comprehensive control unit 12050. Furthermore, as functional components of the comprehensive control unit 12050, a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0308] The drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various programs. For example, the drive system control unit 12010 is used as a control device such as a drive force generating device for generating drive force for a vehicle such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting drive force to the wheels, a steering mechanism for adjusting the vehicle's steering angle, and a braking device for generating braking force for the vehicle.

[0309] The main system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the main system control unit 12020 is used as a control device for keyless entry systems, smart key systems, power windows, or various lights such as headlights, taillights, brake lights, turn signals, and fog lights. In this case, radio waves transmitted from a portable device or signals from various switches, used instead of buttons, can be input to the main system control unit 12020. The main system control unit 12020 receives the input radio waves or signals and controls the vehicle's door locking devices, power windows, lights, etc.

[0310] The exterior information detection unit 12030 detects information related to the exterior of the vehicle, including information from the vehicle control system 12000. For example, the exterior information detection unit 12030 is connected to the imaging unit 12031. The exterior information detection unit 12030 causes the imaging unit 12031 to capture images of the exterior of the vehicle and receives the captured images. Based on the received images, the exterior information detection unit 12030 can perform processing such as detecting objects like people, cars, obstacles, signs, and text on the road, or detecting their distance.

[0311] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output an electrical signal as an image, or it can output an electrical signal as information related to the measured distance. In addition, the light received by the imaging unit 12031 can be visible light, or it can be invisible light such as infrared light.

[0312] The in-vehicle information detection unit 12040 detects information related to the interior of the vehicle. For example, the in-vehicle information detection unit 12040 is connected to a driver state detection unit 12041 that detects the driver's state. For example, the driver state detection unit 12041 includes a camera that captures images of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level, or determine whether the driver is asleep in a seated position.

[0313] The microcomputer 12051 can calculate control target values ​​for the drive force generating device, steering mechanism, or braking device based on information about the vehicle's interior and exterior obtained by the external information detection unit 12030 or the internal information detection unit 12040, and can output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform coordinated control to implement functions of advanced driver assistance systems (ADAS), including collision avoidance or collision mitigation, following distance-based driving, vehicle speed maintenance, vehicle collision warning, and vehicle lane departure warning.

[0314] In addition, the microcomputer 12051 can coordinate and control the drive force generating device, steering mechanism, braking device, etc., based on information about the exterior or interior of the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, so as to realize autonomous driving, where the vehicle drives itself without relying on the operation of the driver.

[0315] In addition, the microcomputer 12051 can output control commands to the main system control unit 12020 based on information about the vehicle's external environment obtained by the external information detection unit 12030. For example, the microcomputer 12051 controls the headlights according to the position of the vehicle in front or oncoming vehicles detected by the external information detection unit 12030 to perform coordinated control, thereby achieving glare prevention such as switching the high beams to low beams.

[0316] The sound / image output unit 12052 transmits at least one of sound and image output signals to an output device capable of visually or audibly informing vehicle occupants or the outside of the vehicle. Figure 54 In the example, an audio speaker 12061, a display unit 12062, and a dashboard 12063 are shown as output devices. For example, the display unit 12062 may include at least one of an in-vehicle display and a head-up display.

[0317] Figure 55 This is a diagram showing an example of the mounting location of the imaging unit 12031.

[0318] exist Figure 55 In the imaging unit 12031, there are imaging units 12101, 12102, 12103, 12104 and 12105.

[0319] Imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, at the front of vehicle 12100, in the side mirrors, rear bumper, and rear door, as well as on the upper side of the windshield inside the vehicle. Imaging unit 12101 in the front of the vehicle and imaging unit 12105 on the upper side of the windshield inside the vehicle primarily acquire images of the front of vehicle 12100. Imaging units 12102 and 12103 in the side mirrors primarily acquire images of the sides of vehicle 12100. Imaging unit 12104 in the rear bumper or rear door primarily acquires images of the rear of vehicle 12100. Imaging unit 12105 on the upper side of the windshield inside the vehicle is mainly used to detect vehicles, pedestrians, obstacles, traffic signals, traffic signs, lanes, etc., ahead.

[0320] Incidentally, Figure 55 Examples of the imaging ranges of imaging units 12101 to 12104 are shown. Imaging range 12111 represents the imaging range of imaging unit 12101 located at the front of the vehicle. Imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103 located in the side mirrors, respectively. Imaging range 12114 represents the imaging range of imaging unit 12104 located in the rear bumper or rear door. For example, by superimposing the image data captured by imaging units 12101 to 12104 onto each other, a bird's-eye view of the vehicle 12100 as seen from above is obtained.

[0321] At least one of the imaging units 12101 to 12104 may have the function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0322] For example, based on distance information obtained from imaging units 12101-12104, microcomputer 12051 can determine the distance to each three-dimensional object within the imaging range 12111-12114 and the time change of that distance (relative speed relative to vehicle 12100), thereby extracting the three-dimensional object located on the driving path of vehicle 12100, particularly the closest three-dimensional object, that is traveling in approximately the same direction as vehicle 12100 at a predetermined speed (e.g., 0 km / h or more), as the vehicle ahead. Furthermore, microcomputer 12051 can set a pre-determined distance between vehicles in front of the vehicle ahead and can perform automatic braking control (including tracking stop control), automatic acceleration control (including tracking start control), etc. Therefore, coordinated control for autonomous driving, etc., aimed at autonomous vehicle operation without relying on driver operation, is possible.

[0323] For example, based on distance information obtained from imaging units 12101-12104, microcomputer 12051 can classify three-dimensional object data into three-dimensional object data for two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, microcomputer 12051 identifies obstacles around vehicle 12100 as obstacles that the driver of vehicle 12100 can visually recognize and obstacles that the driver of vehicle 12100 cannot visually recognize. Then, microcomputer 12051 determines the collision risk, indicating the degree of danger of colliding with each obstacle. When the collision risk is equal to or higher than a set value and there is a possibility of collision, microcomputer 12051 outputs a warning to the driver via audio speaker 12061 and display unit 12062, or performs forced deceleration or evasive steering via drive system control unit 12010. Microcomputer 12051 can assist driving to avoid collisions.

[0324] At least one of the imaging units 12101-12104 can be an infrared camera that detects infrared light. For example, the microcomputer 12051 can identify a pedestrian by determining whether a pedestrian exists in the images captured by the imaging units 12101-12104. For example, pedestrian identification is performed by extracting feature points from the images captured by the imaging units 12101-12104, which are infrared cameras, and by performing pattern matching processing on a series of feature points indicating the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the imaging units 12101-12104 and thereby identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 to display a quadrilateral outline for emphasis, superimposed on the identified pedestrian. The sound / image output unit 12052 can also control the display unit 12062 to display an icon or similar indicating the pedestrian at a desired location.

[0325] Examples of vehicle control systems to which the technology according to embodiments of the present disclosure is applicable have been described above. For example, the technology according to embodiments of the present disclosure can be applied to the imaging unit 12031 in the above-described configuration. Specifically, imaging device 1, etc., can be applied to the imaging unit 12031. The application of the technology according to the present disclosure to the imaging unit 12031 enables the acquisition of high-resolution captured images. This allows for high-precision control using the captured images in a moving body control system.

[0326] (Examples of the application of endoscopic surgical systems)

[0327] The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein can be applied to endoscopic surgical systems.

[0328] Figure 56 This is a diagram illustrating an example of a schematic configuration of an endoscopic surgical system to which the technology (the technology) according to embodiments of the present disclosure can be applied.

[0329] exist Figure 56 The image shows a surgeon (physician) 11131 performing surgery on a patient 11132 on a bed 11133 using an endoscopic surgical system 11000. As shown, the endoscopic surgical system 11000 includes an endoscope 11100, other surgical instruments 11110 such as a pneumoperitoneum tube 11111 and an energy delivery device 11112, a support arm assembly 11120 supporting the endoscope 11100 thereon, and a trolley 11200 on which various devices for endoscopic surgery are mounted.

[0330] Endoscope 11100 includes a lens tube 11101 having a region at a predetermined distance distal to its end that is inserted into a body cavity of patient 11132, and a camera 11102 connected to the proximal end of the lens tube 11101. In the example shown in the figures, an endoscope 11100 comprising a rigid endoscope with a rigid lens tube 11101 is illustrated. However, endoscope 11100 may also include a flexible endoscope with a flexible lens tube 11101.

[0331] The lens tube 11101 has an opening at its distal end into which an objective lens is fitted. A light source device 11203 is connected to the endoscope 11100, such that light generated by the light source device 11203 is guided through a light guide extending inside the lens tube 11101 to the distal end of the lens tube, and then directed via the objective lens toward the object being observed within the body cavity of the patient 11132. Note that the endoscope 11100 can be a direct-viewing endoscope, or it can be an oblique-viewing endoscope or a side-viewing endoscope.

[0332] An optical system and an imaging element are housed inside the camera 11102, such that reflected light from the observed object (observation light) is focused onto the imaging element by the optical system. The observation light is photoelectrically converted by the imaging element to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0333] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), etc., and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, for example, the CCU 11201 receives image signals from the camera 11102 and performs various types of image processing, such as image processing (de-mosaic processing), to display an image based on the image signal.

[0334] The display device 11202 displays an image based on an image signal that has been image-processed by the CCU 11201 under the control of the CCU 11201.

[0335] For example, the light source device 11203 includes a light source such as a light-emitting diode (LED) and supplies illumination light to the endoscope 11100 when photographing the surgical area.

[0336] Input device 11204 is an input interface for endoscopic surgical system 11000. Users can input various types of information or commands into endoscopic surgical system 11000 via input device 11204. For example, users can input commands to change the imaging conditions of endoscope 11100 (type of illumination light, magnification, focal length, etc.).

[0337] The treatment device control unit 11205 controls the drive of the energy treatment device 11112 for purposes such as tissue cauterization or incision, and sealing of blood vessels. The pneumoperitoneum device 11206 injects gas into the patient's body cavity 11132 via the pneumoperitoneum tube 11111 to inflate the cavity, ensuring the field of vision of the endoscope 11100 and ensuring the surgeon's working space. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, and graphics.

[0338] Note that, for example, the light source device 11203 supplied to the endoscope 11100 when photographing the surgical area may include an LED, a laser light source, or a combination thereof as a white light source. In the case where the white light source includes a combination of red, green, and blue (RGB) laser light sources, the white balance adjustment of the captured image can be performed by the light source device 11203 because the output intensity and timing of each color (wavelength) can be controlled with high precision. Furthermore, in this case, if lasers from each RGB laser source are emitted onto the object of observation in a time-division manner and the driving of the imaging element of the camera 11102 is controlled synchronously with the emission timing, images corresponding to RGB colors can be captured in a time-division manner. According to this method, color images can be obtained even if a color filter is not provided for the imaging element.

[0339] Furthermore, the light source device 11203 can be controlled to change the intensity of the light to be output at various preset intervals. By controlling the driving of the imaging element of the camera 11102 in sync with the timing of the change in light intensity to acquire and synthesize images in a time-segmented manner, high dynamic range images without underexposed shadows or overexposed highlights can be generated.

[0340] Furthermore, the light source device 11203 can supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, narrow-band imaging (narrow-band imaging) is performed by emitting light with a narrow band range compared to the illumination light used in ordinary observation (i.e., white light) by utilizing the wavelength dependence of light absorption in body tissues. Additionally, in special light observation, fluorescence observation is performed to obtain images from fluorescence generated by emitting excitation light. In fluorescence observation, for example, excitation light can be irradiated onto body tissue to observe fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) can be locally injected into the body tissue and excitation light corresponding to the fluorescence wavelength of the reagent can be emitted to obtain a fluorescence image. The light source device 11203 can supply narrow-band light and / or excitation light suitable for the aforementioned special light observation.

[0341] Figure 57 It is shown Figure 56 The block diagram shown illustrates an example of the functional configuration of the camera 11102 and CCU 11201.

[0342] Camera 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera control unit 11405. CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. Camera 11102 and CCU 11201 are connected via a transmission cable 11400 for communication with each other.

[0343] Lens unit 11401 is an optical system disposed at the connection portion with lens barrel 11101. Observation light received from the distal end of lens barrel 11101 is guided to camera 11102 and incident on lens unit 11401. Lens unit 11401 includes a combination of multiple lenses, including zoom lenses and focal lenses.

[0344] Imaging unit 11402 includes imaging elements. The number of imaging elements included in imaging unit 11402 can be one (single-plate type) or multiple (multi-plate type). When imaging unit 11402 is configured as multi-plate type, for example, image signals corresponding to each RGB are generated by the imaging elements, and a color image can be obtained by synthesizing the image signals. Alternatively, imaging unit 11402 can also be configured to have a pair of imaging elements for acquiring image signals for the right and left eyes for three-dimensional (3D) display. If 3D display is performed, the surgeon 11131 can more accurately grasp the depth of body tissue in the surgical site. Note that when imaging unit 11402 is configured as multi-plate type, multiple lens units 11401 are provided corresponding to each imaging element.

[0345] Furthermore, the imaging unit 11402 does not necessarily have to be mounted on the camera 11102. For example, the imaging unit 11402 can be mounted directly behind the objective lens inside the lens barrel 11101.

[0346] The drive unit 11403 includes an actuator, and under the control of the camera control unit 11405, moves the zoom lens and focus lens of the lens unit 11401 a predetermined distance along the optical axis. Therefore, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0347] The communication unit 11404 includes a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits image signals acquired from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0348] Additionally, the communication unit 11404 receives control signals from the CCU 11201 for controlling the camera 11102 and supplies these control signals to the camera control unit 11405. The control signals include information related to imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value during imaging, and / or information specifying the magnification and focus of the captured image.

[0349] Note that imaging conditions such as frame rate, exposure value, magnification, and focus can be appropriately specified by the user, or can be automatically set by the control unit 11413 of CCU 11201 based on the acquired image signal. In the latter case, the automatic exposure (AE) function, automatic focus (AF) function, and automatic white balance (AWB) function are integrated into the endoscope 11100.

[0350] The camera control unit 11405 controls the driving of the camera 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0351] The communication unit 11411 includes a communication device for transmitting and receiving various types of information to and from the camera 11102. The communication unit 11411 receives image signals transmitted from the camera 11102 via a transmission cable 11400.

[0352] In addition, the communication unit 11411 transmits control signals for controlling the camera 11102 to the camera 11102. Image signals and control signals can be transmitted via electrical communication, optical communication, etc.

[0353] The image processing unit 11412 performs various types of image processing on the image signal in RAW data form transmitted from the camera 11102.

[0354] The control unit 11413 performs various types of control related to imaging the surgical area, etc., via the endoscope 11100 and displaying the images captured by imaging the surgical area, etc. For example, the control unit 11413 generates control signals for controlling the drive of the camera 11102.

[0355] Furthermore, the control unit 11413 controls the display device 11202 to display captured images of the surgical area, etc., based on image signals that have already been processed by the image processing unit 11412. In this case, the control unit 11413 can identify various objects within the captured images using various image recognition techniques. For example, the control unit 11413 can detect the edge shape and / or color of objects contained in the captured images to identify surgical instruments such as forceps, specific living body sites, bleeding, fog when using the energy treatment device 11112, etc. When controlling the display device 11202 to display the captured images, the control unit 11413 can use the recognition results to make the display device 11202 display various types of surgical support information with images of the surgical area in an overlay manner. When surgical support information is displayed in an overlay and presented to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can perform the surgery reliably.

[0356] The transmission cable 11400 that connects the camera 11102 and the CCU 11201 to each other is an electrical signal cable for communication of electrical signals, an optical fiber for communication of optical signals, or a composite cable for both electrical signals and optical communication.

[0357] Here, in the example shown in the attached figure, communication is performed via wired communication using transmission cable 11400, but communication between camera 11102 and CCU 11201 can be performed wirelessly.

[0358] Examples of endoscopic surgical systems to which the technology of this disclosure is applicable have been described above. For example, the technology of this disclosure is applicable to the imaging unit 11402 in the camera 11102 of the endoscope 11100 as described above. The application of the technology of this disclosure to the imaging unit 11402 enables the endoscope 11100 to provide high-definition images.

[0359] The present disclosure has been described above through embodiments, modifications, applicable examples, and application examples; however, the present technology is not limited to the above embodiments, and various modifications are possible. For example, the above modifications have been described as modifications of the above embodiments; furthermore, the configurations of the various modifications can be appropriately combined.

[0360] In the above embodiments, the imaging device is described as an example; however, the light detection device of this disclosure can be any type of device that receives incident light and converts the light into electrical charge. The signal to be output can be an image information signal or a ranging information signal. The light detection device (imaging device) can be applied to image sensors, ranging sensors, etc. It should be noted that this disclosure is not limited to back-illuminated image sensors, but is also applicable to front-illuminated image sensors.

[0361] The optical detection device according to this disclosure can also be used as a ranging sensor, which is capable of distance measurement via time-of-flight (TOF). The optical detection device (imaging device) can also be used as a sensor configured to detect events, such as an event-driven sensor (called an event vision sensor (EVS), event-driven sensor (EDS), dynamic vision sensor (DVS), etc.).

[0362] The photodetector according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; a fourth separation region disposed between adjacent second and fourth photoelectric conversion elements in the second direction; a floating diffusion portion disposed between the third and fourth separation regions; and a first region of a first conductivity type disposed between the third separation region and the floating diffusion portion. Therefore, the imaging device can have a structure conducive to pixel miniaturization.

[0363] The light detection device according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; and a fourth separation region disposed between adjacent second and fourth photoelectric conversion elements in the second direction. The length of the third separation region in the first direction differs from the length of the first separation region in the second direction or the length of the second separation region in the second direction. Therefore, a light detection device with excellent performance can be realized.

[0364] A light detection device according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; a first gate and a second gate, corresponding to and configured to transfer charge with respect to the first photoelectric conversion element; and an overflow path disposed adjacent to the first, second, third, and fourth photoelectric conversion elements. The first gate is disposed adjacent to the overflow path and the third separation region. The second gate is disposed adjacent to the overflow path and the first separation region. Therefore, the imaging device can control the potential of the overflow path. A light detection device with excellent performance can be realized.

[0365] The light detection device according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, each pixel including a photoelectric conversion element disposed in the semiconductor layer; a pixel separation region configured to surround the plurality of adjacent pixels; and a first separation region disposed between the plurality of adjacent pixels. The first separation region is disposed at a certain distance from the pixel separation region. Therefore, the imaging device can have a structure that facilitates pixel miniaturization. A light detection device with excellent performance can be realized.

[0366] The light detection device according to an embodiment of this disclosure includes: a semiconductor layer; a plurality of pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and a pixel separation region disposed in the semiconductor layer around the pixel. The first pixel includes: a first separation region disposed between adjacent first and second photoelectric conversion elements in a first direction; a second separation region disposed between adjacent third and fourth photoelectric conversion elements in the first direction; a third separation region disposed between adjacent first and third photoelectric conversion elements in a second direction intersecting the first direction; a fourth separation region disposed between adjacent second and fourth photoelectric conversion elements in the second direction; a floating diffusion portion disposed between the third and fourth separation regions; and a first region of a first conductivity type disposed between adjacent pixels. Therefore, the imaging device can have a structure conducive to pixel miniaturization. A light detection device with excellent performance can be realized.

[0367] It should be noted that the effects described in this specification are merely illustrative; the effects of this disclosure are not limited to those described in this specification, and this disclosure may have other effects. Furthermore, this disclosure may have the following configuration.

[0368] (1) A light detection device, comprising:

[0369] Semiconductor layer;

[0370] Multiple pixels, including a first pixel, the first pixel comprising a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and

[0371] A pixel separation region, which is disposed in the semiconductor layer around the pixel.

[0372] The first pixel includes

[0373] A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction.

[0374] The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction.

[0375] The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction.

[0376] The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction.

[0377] A floating diffusion section is disposed between the third separation region and the fourth separation region, and

[0378] A first region of a first conductivity type is disposed between the third separation region and the floating diffusion section.

[0379] (2) The optical detection device according to (1), wherein

[0380] The first pixel includes a first contact portion electrically connected to the first region.

[0381] (3) The photodetector according to (2) further includes a first conductivity type trap disposed in the semiconductor layer.

[0382] The first region is located within the well, and

[0383] The first contact portion is electrically connected to the sink via a first region.

[0384] (4) The light detection device according to any one of (1) to (3), wherein

[0385] The length of the third separation region in the first direction is shorter than the length of the first separation region in the second direction or the length of the second separation region in the second direction.

[0386] (5) The light detection device according to any one of (1) to (4), wherein

[0387] The first pixel includes an overflow path disposed adjacent to the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element in the semiconductor layer.

[0388] (6) The light detection device according to any one of (1) to (5), wherein

[0389] The length of the third separation region in the first direction is approximately equal to the length of the first separation region in the second direction or the length of the second separation region in the second direction.

[0390] (7) The light detection apparatus according to any one of (1) to (6), wherein

[0391] The first pixel includes:

[0392] A second region of the first conductivity type is disposed between the fourth separation region and the floating diffusion section; and

[0393] The second contact part is electrically connected to the second area.

[0394] (8) The light detection apparatus according to any one of (1) to (7), wherein

[0395] The length of the fourth separation region in the first direction is shorter than the length of the first separation region in the second direction or the length of the second separation region in the second direction.

[0396] (9) A light detection device, comprising:

[0397] Semiconductor layer;

[0398] Multiple pixels, including a first pixel, the first pixel comprising a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and

[0399] A pixel separation region, which is disposed in the semiconductor layer around the pixel.

[0400] The first pixel includes

[0401] A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction.

[0402] The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction.

[0403] The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent in a second direction intersecting the first direction.

[0404] The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction.

[0405] The length of the third separation region in the first direction is different from the length of the first separation region in the second direction or the length of the second separation region in the second direction.

[0406] (10) The optical detection device according to (9), wherein

[0407] The first pixel includes:

[0408] A floating diffusion section is disposed between the third separation region and the fourth separation region; and

[0409] The transistor includes a gate disposed between the third separation region and the floating diffusion portion, and is configured to transmit charge photoelectrically converted by the first photoelectric conversion element.

[0410] (11) The optical detection device according to (9) or (10), wherein

[0411] The first pixel includes:

[0412] A first region of a first conductivity type is disposed between a third separation region and a fourth separation region;

[0413] The first contact portion, which is electrically connected to the first region; and

[0414] A floating diffusion section is disposed between the third separation region and the first region.

[0415] (12) The light detection apparatus according to any one of (9) to (11), wherein

[0416] The first pixel includes:

[0417] A first region of a first conductivity type is disposed between a third separation region and a fourth separation region;

[0418] The first contact portion, which is electrically connected to the first region; and

[0419] A transistor includes a gate disposed between a third separation region and a first region, and is configured to transmit charge photoelectrically converted by a first photoelectric conversion element.

[0420] (13) A light detection device, comprising:

[0421] Semiconductor layer;

[0422] Multiple pixels, including a first pixel, the first pixel comprising a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and

[0423] A pixel separation region, which is disposed in the semiconductor layer around the pixel.

[0424] The first pixel includes

[0425] A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction.

[0426] The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction.

[0427] The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction.

[0428] The first gate and the second gate are disposed corresponding to the first photoelectric conversion element and configured to transfer charge.

[0429] The overflow path is arranged adjacent to the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element.

[0430] The first gate is disposed adjacent to the overflow path and the third separation region, and

[0431] The second gate is disposed adjacent to the overflow path and the first separation region.

[0432] (14) The optical detection device according to (13), wherein

[0433] The first gate and the second gate are electrically connected to different wiring.

[0434] (15) The optical detection device according to (13) or (14), wherein

[0435] The first gate is electrically connected to a first wiring that allows the transmission of a first voltage, and

[0436] The second gate is electrically connected to a second wiring that allows the transmission of a second voltage lower than the first voltage.

[0437] (16) The light detection apparatus according to any one of (13) to (15), wherein

[0438] The first pixel includes a third gate and a fourth gate, which are correspondingly disposed with the third photoelectric conversion element and configured to transport charge.

[0439] The third gate is disposed adjacent to the overflow path and the third separation region, and

[0440] The fourth gate is disposed adjacent to the overflow path and the second separation region.

[0441] (17) A light detection device, comprising:

[0442] Semiconductor layer;

[0443] Multiple pixels, each pixel including a photoelectric conversion element disposed in the semiconductor layer;

[0444] Pixel separation regions are defined to surround multiple adjacent pixels; and

[0445] The first separation region is set between multiple adjacent pixels.

[0446] The first separation region is located at a certain distance from the pixel separation region.

[0447] (18) The light detection device according to (17) further includes a transistor disposed between the first separation region and the pixel separation region.

[0448] (19) The optical detection device according to (18), wherein

[0449] The transistor is configured to output a signal based on the charge photoelectrically converted by the photoelectric conversion element.

[0450] (20) The light detection apparatus according to any one of (17) to (19) further includes:

[0451] A first region of a first conductivity type is disposed between the first separation region and the pixel separation region; and

[0452] The first contact portion is electrically connected to the first region.

[0453] (21) A light detection device, comprising:

[0454] Semiconductor layer;

[0455] Multiple pixels, including a first pixel, the first pixel comprising a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer; and

[0456] A pixel separation region, which is disposed in the semiconductor layer around the pixel.

[0457] The first pixel includes

[0458] A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction.

[0459] The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction.

[0460] The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction.

[0461] The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction.

[0462] A floating diffusion section is disposed between the third separation region and the fourth separation region, and

[0463] A first region of a first conductivity type is disposed between a plurality of adjacent pixels.

[0464] (22) The optical detection device according to (21) further includes a first contact portion electrically connected to the first region.

[0465] (23) An electronic device comprising:

[0466] Optical systems; and

[0467] A light detection device is configured to receive light transmitted through the optical system.

[0468] The optical detection device includes

[0469] Semiconductor layer

[0470] Multiple pixels, including a first pixel, the first pixel comprising a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer, and

[0471] A pixel separation region, which is disposed in the semiconductor layer around the pixel.

[0472] The first pixel includes

[0473] A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction.

[0474] The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction.

[0475] The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction.

[0476] The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction.

[0477] A floating diffusion section is disposed between the third separation region and the fourth separation region, and

[0478] A first region of a first conductivity type is disposed between the third separation region and the floating diffusion section.

[0479] (24) An electronic device comprising:

[0480] Optical systems; and

[0481] A light detection device is configured to receive light transmitted through the optical system.

[0482] The optical detection device includes

[0483] Semiconductor layer

[0484] Multiple pixels, including a first pixel, the first pixel comprising a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer, and

[0485] A pixel separation region, which is disposed in the semiconductor layer around the pixel.

[0486] The first pixel includes

[0487] A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction.

[0488] The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction.

[0489] The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent in a second direction intersecting the first direction.

[0490] The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction.

[0491] The length of the third separation region in the first direction is different from the length of the first separation region in the second direction or the length of the second separation region in the second direction.

[0492] (25) An electronic device comprising:

[0493] Optical systems; and

[0494] A light detection device is configured to receive light transmitted through the optical system.

[0495] The optical detection device includes

[0496] Semiconductor layer

[0497] Multiple pixels, including a first pixel, the first pixel comprising a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer, and

[0498] A pixel separation region, which is disposed in the semiconductor layer around the pixel.

[0499] The first pixel includes

[0500] A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction.

[0501] The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction.

[0502] The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction.

[0503] The first gate and the second gate are disposed corresponding to the first photoelectric conversion element and configured to transfer charge.

[0504] The overflow path is arranged adjacent to the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element.

[0505] The first gate is disposed adjacent to the overflow path and the third separation region, and

[0506] The second gate is disposed adjacent to the overflow path and the first separation region.

[0507] (26) An electronic device comprising:

[0508] Optical systems; and

[0509] A light detection device is configured to receive light transmitted through the optical system.

[0510] The optical detection device includes

[0511] Semiconductor layer

[0512] Multiple pixels, each pixel including a photoelectric conversion element disposed in the semiconductor layer,

[0513] Pixel separation regions, which are set up to surround multiple adjacent pixels, and

[0514] The first separation region is set between multiple adjacent pixels.

[0515] The first separation region is located at a certain distance from the pixel separation region.

[0516] (27) An electronic device comprising:

[0517] Optical systems; and

[0518] A light detection device is configured to receive light transmitted through the optical system.

[0519] The optical detection device includes

[0520] Semiconductor layer

[0521] Multiple pixels, including a first pixel, the first pixel comprising a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element disposed in the semiconductor layer, and

[0522] A pixel separation region, which is disposed in the semiconductor layer around the pixel.

[0523] The first pixel includes

[0524] A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction.

[0525] The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction.

[0526] The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction.

[0527] The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction.

[0528] A floating diffusion section is disposed between the third separation region and the fourth separation region, and

[0529] A first region of a first conductivity type is disposed between a plurality of adjacent pixels.

[0530] This application claims the benefit of Japanese priority patent application JP2024-018492, filed with the Japan Patent Office on February 9, 2024, the entire contents of which are incorporated herein by reference.

[0531] Those skilled in the art will understand that various modifications, combinations, sub-combinations and alterations can be made depending on design requirements and other factors, as long as they are within the scope of the appended claims or their equivalents.

Claims

1. A light detection device, comprising: Semiconductor layer; Multiple pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element and a fourth photoelectric conversion element disposed in the semiconductor layer; and A pixel separation region, which is disposed in the semiconductor layer around the pixel. The first pixel includes A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction. The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction. The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction. The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction. A floating diffusion section is disposed between the third separation region and the fourth separation region, and A first region of a first conductivity type is disposed between the third separation region and the floating diffusion section.

2. The optical detection device according to claim 1, wherein... The first pixel includes a first contact portion electrically connected to the first region.

3. The photodetector according to claim 2 further includes a trap of a first conductivity type disposed in the semiconductor layer. The first region is located within the well, and The first contact portion is electrically connected to the sink via a first region.

4. The optical detection device according to claim 1, wherein... The length of the third separation region in the first direction is shorter than the length of the first separation region in the second direction or the length of the second separation region in the second direction.

5. The optical detection device according to claim 1, wherein... The first pixel includes an overflow path disposed adjacent to the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element in the semiconductor layer.

6. The optical detection device according to claim 1, wherein... The length of the third separation region in the first direction is approximately equal to the length of the first separation region in the second direction or the length of the second separation region in the second direction.

7. The optical detection device according to claim 1, wherein... The first pixel includes: A second region of the first conductivity type is disposed between the fourth separation region and the floating diffusion section; and The second contact part is electrically connected to the second area.

8. The optical detection device according to claim 1, wherein... The length of the fourth separation region in the first direction is shorter than the length of the first separation region in the second direction or the length of the second separation region in the second direction.

9. A light detection device, comprising: Semiconductor layer; Multiple pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element and a fourth photoelectric conversion element disposed in the semiconductor layer; and A pixel separation region, which is disposed in the semiconductor layer around the pixel. The first pixel includes A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction. The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction. The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent in a second direction intersecting the first direction. The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction. The length of the third separation region in the first direction is different from the length of the first separation region in the second direction or the length of the second separation region in the second direction.

10. The optical detection device according to claim 9, wherein... The first pixel includes: A floating diffusion section is disposed between the third separation region and the fourth separation region; and The transistor includes a gate disposed between the third separation region and the floating diffusion portion, and is configured to transmit charge photoelectrically converted by the first photoelectric conversion element.

11. The optical detection device according to claim 9, wherein... The first pixel includes: A first region of a first conductivity type is disposed between a third separation region and a fourth separation region; The first contact portion is electrically connected to the first region; and A floating diffusion section is disposed between the third separation region and the first region.

12. The optical detection device according to claim 9, wherein... The first pixel includes: A first region of a first conductivity type is disposed between a third separation region and a fourth separation region; The first contact portion is electrically connected to the first region; and A transistor includes a gate disposed between a third separation region and a first region, and is configured to transmit charge photoelectrically converted by a first photoelectric conversion element.

13. A light detection device, comprising: Semiconductor layer; Multiple pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element and a fourth photoelectric conversion element disposed in the semiconductor layer; and A pixel separation region, which is disposed in the semiconductor layer around the pixel. The first pixel includes A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction. The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction. The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction. The first gate and the second gate are disposed corresponding to the first photoelectric conversion element and configured to transfer charge. The overflow path is arranged adjacent to the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element. The first gate is disposed adjacent to the overflow path and the third separation region, and The second gate is disposed adjacent to the overflow path and the first separation region.

14. The optical detection device according to claim 13, wherein... The first gate and the second gate are electrically connected to different wiring.

15. The optical detection device according to claim 13, wherein... The first gate is electrically connected to a first wiring that allows the transmission of a first voltage, and The second gate is electrically connected to a second wiring that allows the transmission of a second voltage lower than the first voltage.

16. The optical detection device according to claim 13, wherein The first pixel includes a third gate and a fourth gate, which are correspondingly disposed with the third photoelectric conversion element and configured to transport charge. The third gate is disposed adjacent to the overflow path and the third separation region, and The fourth gate is disposed adjacent to the overflow path and the second separation region.

17. A light detection device, comprising: Semiconductor layer; Multiple pixels, each pixel including a photoelectric conversion element disposed in the semiconductor layer; Pixel separation regions are defined to surround multiple adjacent pixels; and The first separation region is set between multiple adjacent pixels. The first separation region is located at a certain distance from the pixel separation region.

18. The light detection device according to claim 17, further comprising a transistor disposed between the first separation region and the pixel separation region.

19. The optical detection device according to claim 18, wherein... The transistor is configured to output a signal based on the charge photoelectrically converted by the photoelectric conversion element.

20. The optical detection device according to claim 17, further comprising: A first region of a first conductivity type is disposed between the first separation region and the pixel separation region; and The first contact portion is electrically connected to the first region.

21. A light detection device, comprising: Semiconductor layer; Multiple pixels, including a first pixel, the first pixel including a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element and a fourth photoelectric conversion element disposed in the semiconductor layer; and A pixel separation region, which is disposed in the semiconductor layer around the pixel. The first pixel includes A first separation region is disposed between adjacent first and second photoelectric conversion elements in a first direction. The second separation region is disposed between the third and fourth photoelectric conversion elements that are adjacent in the first direction. The third separation region is disposed between the first photoelectric conversion element and the third photoelectric conversion element, which are adjacent to each other in the second direction intersecting the first direction. The fourth separation region is disposed between the second and fourth photoelectric conversion elements adjacent to each other in the second direction. A floating diffusion section is disposed between the third separation region and the fourth separation region, and A first region of a first conductivity type is disposed between a plurality of adjacent pixels.

22. The optical detection device according to claim 21, further comprising a first contact portion electrically connected to the first region.

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