Two-dimensional non-layered transition metal nitride and carbide materials and methods of preparation
High-purity, surface-functional-free two-dimensional non-layered transition metal nitrides and carbides were successfully prepared by gas-solid reaction of solid iodine vapor with MAX phase precursors. This solved the problems of structural collapse and functional group introduction in the prior art, and achieved high conductivity and environmental stability of the materials, making them suitable for material conversion and industrial production with multiple elemental compositions.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HUAZHONG UNIV OF SCI & TECH
- Filing Date
- 2026-05-12
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies struggle to prepare high-quality two-dimensional non-layered transition metal nitrides and carbides without causing structural collapse, and traditional etching methods introduce surface functional groups, leading to decreased material conductivity and poor environmental stability.
A gas-solid reaction was carried out between solid iodine vapor and MAX phase precursor. Atoms and M atoms were selectively etched to remove them, thereby achieving a topological transformation from layered structure to face-centered cubic structure. This process was used to prepare two-dimensional non-layered transition metal nitrides or carbides with no halogen, hydroxyl or oxygen functional groups on the surface.
The preparation of high-purity, surface-functional-free two-dimensional non-layered transition metal nitrides and carbides has been achieved. They exhibit excellent conductivity and environmental stability, are suitable for material conversion with multiple elemental compositions, and are easy to scale up for production.
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Figure CN122403384A_ABST