Method for forming carbon film on substrate surface
By performing heating and plasma pre-cleaning processes on the surface of silicon carbide substrates, the problem of easy damage to carbon films during high-temperature tempering was solved, achieving tight bonding and surface smoothness of the carbon films, and improving the protection effect of the substrate and the activation efficiency of ion implantation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SKYTECH
- Filing Date
- 2025-01-15
- Publication Date
- 2026-07-17
AI Technical Summary
The carbon film formed on the surface of the silicon carbide substrate is prone to damage or gaps during high-temperature tempering, which leads to increased surface roughness and affects the structure of the ion implantation region and the performance of electronic products.
Before forming a carbon film on the substrate surface, a heating process is performed to remove moisture and a plasma pre-cleaning process is carried out to ensure a tight bond between the carbon film and the substrate, and to avoid structural damage and gap formation during high-temperature tempering.
The structural strength and flatness of the carbon film are improved, ensuring that the substrate surface is flat after high-temperature tempering, enhancing the protection effect on the substrate, and improving the activation effect of ion implantation.
Smart Images
Figure CN122406181A_ABST