Sapphire crystal growth furnace and crystal growth method
By coordinating the trigger component with the seed crystal rod, the protective plate can be automatically sealed and opened, solving the problem of contaminants polluting the seed crystal during sapphire crystal growth and improving crystal growth quality and equipment stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NINGXIA XINJINGSHENG ELECTRONIC MATERIALS CO LTD
- Filing Date
- 2026-06-16
- Publication Date
- 2026-07-17
AI Technical Summary
In existing sapphire crystal growth processes, contaminants during the boiling stage can easily contaminate the seed crystal, leading to increased crystal defects and lower yield and quality.
The system employs a triggering component and a seed crystal rod to support and trigger the crystal. Through the automatic sealing and opening of the protective plate, contaminants are prevented from contaminating the seed crystal, ensuring the cleanliness of the crystal growth environment.
It achieves automatic sealing during the boiling stage and precise opening during the crystal growth stage, improving the quality and yield of crystal growth, reducing the operating load and jamming risk of the equipment, and enhancing the reliability and stability of the equipment.
Smart Images
Figure CN122406362A_ABST