A high-stability Mg-Bi-based single-crystal thermoelectric material, a thermoelectric device prepared by using the material, and a preparation method thereof
By combining highly stable Mg-Bi-based single-crystal thermoelectric materials with magnesium-aluminum-copper alloy solder layers, the problem of poor stability of Mg3Bi2-based materials in air is solved, realizing long-term stability and efficient thermoelectric conversion of thermoelectric devices in air, which is suitable for waste heat recovery, thermoelectric power generation and other fields.
CN122406384APending Publication Date: 2026-07-17SHANDONG UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANDONG UNIV
- Filing Date
- 2025-01-17
- Publication Date
- 2026-07-17
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Figure CN122406384A_ABST
Abstract
本发明涉及一种高稳定性Mg‑Bi基单晶热电材料、采用该材料制备的热电器件及其制备方法。所述Mg‑Bi基单晶热电材料为Mg3Bi2晶体构型，化学式为Mg3+xDyBizSb2‑z‑mTem，其中x为0~0.2、y为0~0.2、z为0~2、m为0~0.03，D为Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn中的一种或两种以上的组合。本发明还提供了使用该Mg‑Bi基单晶热电材料制备的热电单臂、热电器件及其制备方法。本发明Mg‑Bi基单晶热电材料具有优异的近室温区热电性能，不仅尺寸较大，且晶体具有较高的晶体质量。同时还具有较高的输出功率和转化效率，温差为176℃时可以实现0.28W的输出功率和4.4%的转化效率。并且使用该材料制备的热电器件稳定性好，经过90天的放置输出功率也未发生显著衰减。
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