A full-silicon carbide piezoresistive pressure sensing chip and a preparation method thereof
By employing processes such as Si-SiC temporary bonding, CMP thinning, and ICP shallow etching, combined with the Ni/Ti/Ni/TaSi2/Nb/Pt metal system, the problems of performance degradation and low etching rate of traditional silicon-based piezoresistive sensors at high temperatures have been solved, achieving stability and high-precision pressure measurement of the sensor at high temperatures.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHONGBEI UNIV
- Filing Date
- 2026-05-15
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional silicon-based piezoresistive sensors degrade in performance under high-temperature environments, and traditional silicon carbide etching processes suffer from low etching rates and micromask effects, which affect the sensor's pressure response and output performance.
A fully silicon carbide piezoresistive pressure sensor chip was fabricated using a method combining Si-SiC temporary bonding, chemical mechanical polishing (CMP) thinning, inductively coupled plasma (ICP) shallow etching cavity preparation, and room temperature activation bonding, along with a Ni/Ti/Ni/TaSi2/Nb/Pt metal system.
This improved the yield and film thickness uniformity of the sensor chip, achieved a smooth surface of the high-quality sensitive diaphragm, and enhanced the stability of the ohmic contact and the high-temperature reliability of the sensor.
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Figure CN122409015A_ABST