Circuit and method for detecting dynamic leakage current in dynamic reverse bias of silicon carbide power devices

By using an active low-pass filter formed by a Schottky barrier diode and a sampling resistor in the dynamic reverse bias test of silicon carbide power devices, the problem of high dV/dt current spikes is solved, and high-precision leakage current monitoring is achieved, which is suitable for reliability testing of silicon carbide power devices.

CN122362052APending Publication Date: 2026-07-10GUANGZHOU RADIO & TELEVISION METROLOGY & TESTING (SHANGHAI)
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-27
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

In dynamic reverse bias testing of silicon carbide power devices, high dV/dt current spikes cause a decrease in the accuracy of leakage current monitoring signals, and existing technologies are unable to effectively filter out high-frequency, high-amplitude current spikes.

Method used

The detection circuit employs both active and passive modes. It uses a Schottky barrier diode and a sampling resistor to form an active low-pass filter to filter out fast, high-amplitude current spikes. Combined with a differential amplifier and a DC power supply, it achieves high-precision leakage current monitoring.

Benefits of technology

It effectively filters out current spikes, ensuring high accuracy of leakage current monitoring signals and adapting to reliability testing of silicon carbide power devices in harsh environments.

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Abstract

The present application relates to the technical fields of dynamic reverse bias test, and relates to a circuit and a method for detecting dynamic leakage current in dynamic reverse bias of silicon carbide power devices, the circuit comprises a circuit for detecting dynamic leakage current in dynamic reverse bias of silicon carbide power devices, including a gate resistor, a half-bridge topology circuit, a Schottky barrier diode, a differential amplifier and a direct current power supply, the half-bridge topology circuit comprises an upper bridge auxiliary measurement silicon carbide power device, a lower bridge measured sample and a lower bridge sampling resistor, the gate of the auxiliary measurement silicon carbide power device and the gate of the measured sample are respectively connected with a gate drive input signal through the gate resistor; a plurality of Schottky barrier diodes are connected in parallel with the lower bridge sampling resistor to form an active low-pass filter, the non-inverting input and the inverting input of the differential amplifier are respectively connected with the anode and the cathode of the Schottky barrier diode; the present application can effectively filter out current spikes, solve the problem of related high dV / dt current spikes, and ensure the high precision of the leakage current monitoring signal.
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