Semiconductor device with barrier introduced at source and drain and method of manufacturing the same

By introducing a ring-shaped thin first barrier layer at the source and drain terminals of the transistor, the problem of the lack of in-memory computing functionality in transistors is solved, realizing a semiconductor device that integrates storage and computing, and possesses neural computing and storage capabilities.

CN116454129BActive Publication Date: 2026-07-03PEKING UNIV SHENZHEN GRADUATE SCHOOL
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
PEKING UNIV SHENZHEN GRADUATE SCHOOL
Filing Date
2023-03-27
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Existing transistors lack in-memory computing capabilities, making it difficult to meet the demands of ultra-high-density storage and ultra-large-scale computing.

Method used

A ring-shaped thin first barrier layer is introduced at the source and drain terminals of the transistor. A high Schottky barrier material is used to embed the active layer and partially wrap the sidewalls of the source and drain to form a Schottky contact to accumulate channel electrons and realize storage and computing functions.

Benefits of technology

It realizes the in-memory computing function of transistors, has the ability to perform neural computation, storage and respond to temperature changes, and has the current characteristics and storage function of neural synapse-like devices.

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Abstract

A semiconductor device with a source-drain barrier and a method for manufacturing the same are disclosed. The semiconductor device includes: a substrate; an active layer formed on the substrate; a gate dielectric layer, a source, and a drain formed on the active layer; a gate electrode formed on the gate dielectric layer; and a first barrier layer having a predetermined width and a predetermined thickness. The first barrier layer partially wraps around the sidewalls of the source and drain electrodes and partially embeds itself in the active layer. The material of the first barrier layer is a high Schottky barrier material. This application enables transistors to have in-memory computing capabilities.
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