Linear piezoelectric thin film material based on undoped ceria and method for preparing the same
By guiding it along in an undoped cerium oxide film <111> Crystalline growth, utilizing alternating atomic layers to excite charge shift, solves the lattice disorder problem of traditional cerium oxide doped materials, achieving high linearity and hysteresis-free piezoelectric response, and expanding the application of piezoelectric materials.
Patent Information
- Application Number
- CN202610695842.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-05-19
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies achieve linear piezoelectric response by doping cerium oxide materials to disrupt the centrosymmetric structure, resulting in lattice disorder and electrical losses, which limits their application in high-precision micro/nano electromechanical systems.
By utilizing the lattice matching relationship between the substrate and the bottom electrode in an undoped cerium oxide thin film, the film is guided along... <111> Crystalline growth excites charge shifts caused by alternating atomic layers, achieving a linear piezoelectric response.
It achieves high linearity and hysteresis-free piezoelectric response, broadens the selection range of piezoelectric materials, and is suitable for high-precision sensing and actuation fields.
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