Semiconductor device and method of forming the same

By forming an alloy material layer on the test pads and performing a reflow process, the problem of uneven bonding interfaces in 3DIC technology was solved. This enabled yield testing of the core chip and flatness of the bonding interface before stacking, thereby improving the overall chip yield and bonding effect.

CN122421731APending Publication Date: 2026-07-17ICLEAGUE TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ICLEAGUE TECH CO LTD
Filing Date
2026-05-28
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In 3D integrated circuit (3DIC) technology, existing technologies struggle to effectively address the challenge of achieving yield testing of core chips while ensuring the bonding interface remains as flat as possible, especially for screening core chips before stacking.

Method used

After the pin test is performed on the test pad, an alloy material layer is formed. The protrusion is removed by chemical mechanical polishing or wet etching, leaving the alloy material layer in the opening. Then, a reflow process is performed to allow the alloy material layer to flow back into the opening, repairing the pin marks on the test pad and ensuring a smooth bonding interface.

Benefits of technology

This technology enables yield screening of semiconductor structures before bonding, repairs damage to test pads, ensures a smooth bonding interface, improves the success rate and overall yield of subsequent bonding, and saves costs.

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Abstract

本公开实施例公开了一种半导体器件及其形成方法,该半导体器件的形成方法包括:提供初始半导体结构;初始半导体结构包括器件层、位于器件层上的互连层、位于互连层上的焊盘层、以及位于焊盘层上的第一介质层;焊盘层中包括测试焊盘,第一介质层中形成有开口,开口暴露出测试焊盘;在测试焊盘上进行扎针测试之后,在初始半导体结构上形成合金材料层;去除部分合金材料层,保留开口中的合金材料层;对保留的合金材料层进行回流工艺处理;在初始半导体结构以及回流处理后的合金材料层上形成键合层。
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