A semiconductor structure and a method of fabricating the same
By setting up a discontinuous structure with a vacuum cavity inside the protection ring of the RF chip, the problems of high-frequency signal loss and mechanical stress transmission caused by dielectric materials are solved, thereby improving the Q value, signal transmission speed and stability of the RF chip.
Patent Information
- Application Number
- CN202610509337.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-16
- Publication Date
- 2026-07-17
AI Technical Summary
The use of dielectric materials in the chip guard ring of existing radio frequency chips leads to high-frequency signal energy loss, mechanical stress transmission, parasitic capacitance, and stability issues, affecting the chip's Q value, resonator efficiency, and filter selectivity.
The system employs first and second protective rings, each containing a vacuum cavity, forming an intermittent structure. This reduces dielectric loss, blocks the transmission of mechanical stress and parasitic capacitance, prevents the influence of moisture, and ensures that the dielectric constant does not change with temperature.
It improves the Q value, signal transmission speed, mechanical stability and reliability of the RF chip, reduces the impact of moisture, and enhances the stability of the RF chip and the integrity of signal transmission.
Smart Images
Figure CN122421773A_ABST