Wafer position detection device and wafer position calibration method, semiconductor process equipment

Abstract

The wafer position detection device, wafer position calibration method and semiconductor process equipment provided by the present application solve the technical problem that different wafers cannot be accurately calibrated in the prior art. When the material of the wafer passing through the target detection area of the optical sensor group changes, or when the warping degree of the wafer changes, the working parameters of the optical sensor unit can be adjusted through the optical sensor parameter adjustment mechanism to adjust the total reflection of the light emitted by the optical sensor unit at the wafer-air interface, so as to detect the initial position of the wafer. At the same time, the direction and distance of the wafer position that need to be corrected are calculated according to the time when the light emitted by the first light emitting unit is blocked by the wafer, and the initial position is calibrated according to the direction and distance that need to be corrected, so as to realize the position calibration of the wafer. The wafer position detection device provided by the present application can detect different wafers without replacing the sensor.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to wafer position detection devices and wafer position calibration methods, and semiconductor process equipment. Background Technology

[0002] Semiconductor process equipment refers to the equipment used in various processing steps such as deposition, etching, and cleaning during semiconductor chip manufacturing. In semiconductor manufacturing, robotic arms are typically used to transfer wafers between chambers or workstations. In wafer transfer systems, wafer calibration is necessary to avoid misalignment during pick-and-place and to improve the accuracy of wafer handling.

[0003] In semiconductor manufacturing processes, each process may differ, resulting in variations in the type of wafers handled by robotic arms. These variations can include differences in wafer material, surface coating, or warpage. When the wafer type changes, current wafer position detection devices and calibration methods often struggle to accurately calibrate different wafers, typically requiring the replacement of sensors with different types. Even with sensor replacement, situations involving significant differences in wafer warpage or transparent wafers frequently arise where sensors fail to accurately detect wafer position, leading to false alarms. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a wafer position detection device and a wafer position calibration method, as well as semiconductor process equipment.

[0005] To address the aforementioned technical problems, this invention provides a wafer position detection device. This device is installed in a semiconductor process equipment and is used to detect the wafer position during wafer transport. The wafer position detection device includes: an optical sensor group comprising two optical sensor units arranged along a first horizontal direction, which is perpendicular to the wafer transport direction; each optical sensor unit includes a first light emitting unit and a first light receiving unit corresponding to the first light emitting unit; the light emitted by the first light emitting unit forms an angle with the vertical direction so that when the wafer passes through, the light emitted by the first light emitting unit is reflected at the wafer-air interface; and an optical sensor parameter adjustment mechanism for adjusting the operating parameters of the optical sensor units, the operating parameters including the emission wavelength and / or the angle of the emitted light.

[0006] In one embodiment of the present invention, the detection device further includes: a group of first reflective elements disposed above the wafer transport path, the first reflective element group including two first reflective elements; an optical sensor group disposed below the wafer transport path, the two optical sensor units of the optical sensor group being respectively disposed corresponding to the two first reflective elements; or, a group of first reflective elements disposed below the wafer transport path, the first reflective element group including two first reflective elements; the optical sensor group disposed above the wafer transport path, the two optical sensor units of the optical sensor group being respectively disposed corresponding to the two first reflective elements.

[0007] In one embodiment of the present invention, the optical sensor parameter adjustment mechanism includes: a first angle adjustment component, the first angle adjustment component including two first angle adjustment mechanisms, the two first angle adjustment mechanisms being used to rotate the two first reflective elements respectively; and a second angle adjustment component, the second angle adjustment component including two second angle adjustment mechanisms, the two second angle adjustment mechanisms being used to rotate the two optical sensor units respectively.

[0008] In one embodiment of the present invention, the first light emitting unit is disposed above the wafer transmission path, and the first light receiving unit is disposed below the wafer transmission path, with the first light receiving unit located on the light emission path of the first light emitting unit; or the first light emitting unit is disposed below the wafer transmission path, and the first light receiving unit is disposed above the wafer transmission path, with the first light receiving unit located on the light emission path of the first light emitting unit.

[0009] In one embodiment of the present invention, the optical sensor parameter adjustment mechanism includes: a third angle adjustment component, the third angle adjustment component including two third angle adjustment mechanisms, the two third angle adjustment mechanisms being used to rotate the two first light emitting units respectively; and a fourth angle adjustment component, the fourth angle adjustment component including two fourth angle adjustment mechanisms, the two fourth angle adjustment mechanisms being used to rotate the two first light receiving units respectively.

[0010] In one embodiment of the present invention, the detection device further includes: a ranging sensor group, the ranging sensor group including two ranging sensor units arranged along a first horizontal direction, each ranging sensor unit including a second light emitting unit and a second light receiving unit; the direction of the light emitted by the second light emitting unit is vertical.

[0011] In one embodiment of the present invention, the detection device further includes a second reflective element group disposed above the wafer transport path, the second reflective element group including two second reflective elements; the ranging sensor group is disposed below the wafer transport path, the ranging sensor group including two ranging sensors, the two ranging sensors being respectively disposed corresponding to the two second reflective elements.

[0012] As a second aspect of the present invention, the present invention also provides a semiconductor process apparatus, comprising: a process chamber, a transfer chamber, and the wafer position detection device described above; the wafer position detection device is located at the wafer transfer port between the process chamber and the transfer chamber.

[0013] In one embodiment of the present invention, the semiconductor process equipment further includes: a wafer position calibration unit, which adjusts the wafer to a target position based on the initial position of the wafer detected by the wafer position detection device.

[0014] As a third aspect of the present invention, the present invention also provides a wafer position calibration method, comprising the following steps: using the wafer position detection device described above to detect the position of a target wafer to obtain an initial position of the target wafer; and calibrating the position of the target wafer based on the initial position of the target wafer detected by the wafer position detection device.

[0015] In one embodiment of the present invention, the detection of the position of the target wafer includes: adjusting the operating parameters of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air.

[0016] In one embodiment of the present invention, adjusting the operating parameters of the optical sensor unit includes: adjusting the incident angle of the light emitted by the optical sensor unit on the surface of the target wafer so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and air; or adjusting the wavelength of the light emitted by the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and air.

[0017] In one embodiment of the present invention, the target wafer is the current wafer of the current process, and the detection of the position of the target wafer includes: adjusting the operating parameters of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air; controlling the target wafer to pass through the target detection area of ​​the optical sensor assembly to detect the position of the target wafer; and obtaining the time when the two optical sensor units are blocked.

[0018] In one embodiment of the present invention, the target wafer is a test wafer, and the detection of the position of the target wafer includes: controlling the target wafer to pass through the target detection area of ​​the optical sensor assembly; adjusting the operating parameters of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air, thereby blocking the optical sensor unit.

[0019] In one embodiment of the present invention, the wafer position detection device further includes: a ranging sensor group, the ranging sensor group including two ranging sensor units arranged along a first horizontal direction, each ranging sensor unit including a second light emitting unit and a second light receiving unit; the calibration method further includes: acquiring the working state of the ranging sensor to determine whether the target wafer passes through the target detection area of ​​the ranging sensor; when the target wafer passes through the target detection area of ​​the ranging sensor, triggering the optical sensor assembly; and detecting the position of the target wafer.

[0020] Compared with existing technologies, the wafer position calibration device and method provided by this invention can adjust the operating parameters of the optical sensor unit through an optical sensor parameter adjustment mechanism when the material of the wafer passing through the wafer transfer port changes or the wafer warpage changes. This adjusts the light emitted by the first light emitting unit in the optical sensor unit to undergo total internal reflection at the wafer-air interface (i.e., the light emitted by the first light emitting unit is completely blocked by the wafer), thereby detecting the initial position of the wafer. Simultaneously, the direction and distance for wafer position correction are calculated based on the time the light emitted by the first light emitting unit is blocked by the wafer, and the initial position is calibrated according to the required direction and distance, thus achieving wafer arrival position calibration. The wafer position detection device provided by this application can detect different wafers without changing the sensor. Attached Figure Description

[0021] The above and other objects, features, and advantages of the present invention will become more apparent from the more detailed description of the embodiments of the invention in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of the invention and form part of the specification. They are used together with the embodiments of the invention to explain the invention and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same parts or steps.

[0022] Figure 1 The diagram shows a schematic of a wafer position detection device in related technologies.

[0023] Figure 2 The diagram shows a schematic of a wafer position detection device in related technologies.

[0024] Figure 3The diagram shown is a schematic diagram of a semiconductor process equipment provided in an embodiment of the present invention.

[0025] Figure 4 The diagram shown is a schematic representation of a wafer position detection device according to an embodiment of the present invention.

[0026] Figure 5 The diagram shown is a partial structural schematic of a wafer position detection device provided in another embodiment of the present invention.

[0027] Figure 6 The diagram shown is a schematic flowchart of a wafer position calibration method provided in an embodiment of the present invention.

[0028] Figure 7 The diagram shown is a schematic flowchart of a wafer position detection method provided in an embodiment of the present invention.

[0029] Figure 8 The diagram shown is a schematic flowchart of a wafer position detection method provided in another embodiment of the present invention.

[0030] Figure 9 The diagram shown illustrates a total internal reflection of light emitted by an optical sensor unit at the interface between the target wafer and air in one embodiment of the present invention.

[0031] Figure 10 The diagram shown is a schematic flowchart of a wafer position calibration method provided in another embodiment of the present invention.

[0032] Figure 11 The diagram shown is a schematic diagram of the structure of a target wafer located in the target detection area of ​​a ranging sensor assembly according to an embodiment of the present invention.

[0033] Figure 12 The diagram shown is a working block diagram of a semiconductor process equipment provided in an embodiment of the present invention.

[0034] Figure label:

[0035] 10-Semiconductor process equipment; 101-Transfer chamber; 102-Process chamber; 103-Robot arm; 1-Reflector; 20-Optical sensor; 11-First reflective element; 12-Second reflective element; 2-Optical sensor unit; 21-First light emitting unit; 22-First light receiving unit; 23-Signal receiving end; 24-Signal transmitting end; 3-Range sensor; 51-First angle adjustment mechanism; 52-Second angle adjustment mechanism; 53-Third angle adjustment mechanism; 54-Fourth angle adjustment mechanism; 6-Wafer transfer port; 7-Target wafer. Detailed Implementation

[0036] In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, top, bottom, etc.) in the embodiments of this invention are only used to explain the relative positional relationships and movement of the components in a specific orientation (as shown in the accompanying drawings). If the specific orientation changes, the directional indication will also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0037] Furthermore, the reference to "embodiment" herein means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0038] Application Overview

[0039] Figure 1 The diagram shows a schematic representation of a wafer position detection device in related technologies. Figure 1 As shown, the wafer position detection device includes two reflectors 1 positioned above the wafer transfer port 6 and two optical sensors 20 positioned below the wafer transfer port 6. The two reflectors 1 are respectively positioned corresponding to the two optical sensors 20. The light emitted from the emitting end of the optical sensor 20 can be reflected back to the receiving end of the corresponding optical sensor 20 by the reflectors 1. When a wafer passes through the wafer transfer port 6, the light emitted by the optical sensors 20 is completely blocked by the wafer. At this time, the reflector 1 corresponding to the optical sensor 20 cannot receive any light emitted by the optical sensor 20. Therefore, the direction and distance for wafer position correction can be calculated based on the time it takes for the light emitted by the two optical sensors 20 to be reflected by the wafer.

[0040] Figure 2 The diagram shows a structural schematic of another wafer position detection device in related technologies. Figure 2As shown, the wafer position detection device includes two signal receiving terminals 23 positioned above the wafer transfer port 6 and two signal transmitting terminals 24 positioned below the wafer transfer port 6. The two signal receiving terminals 23 and the two signal transmitting terminals 24 are respectively configured correspondingly, and the light emitted by the signal transmitting terminal 24 can be received by the corresponding signal receiving terminal 23. When a wafer passes through the wafer transfer port 6, the light emitted by the signal transmitting terminal 24 is completely blocked by the wafer. At this time, the signal receiving terminal 23 corresponding to the signal transmitting terminal 24 cannot receive any light emitted by the signal transmitting terminal 24. Therefore, the direction and distance that the wafer needs to be corrected can be calculated based on the time it takes for the light emitted by the signal transmitting terminal 24 to be reflected by the wafer.

[0041] Whether Figure 1 The wafer position detection device shown is still Figure 2 The wafer position detection device shown often struggles to accurately calibrate different wafers when the wafer type changes. For example, the wafer material may change (e.g., transparent wafer, non-transparent wafer), or the wafer warpage may increase. The light emitted from the signal transmitter may not be blocked by the wafer, making it difficult to calculate the direction and distance that the wafer needs to be corrected.

[0042] For example, when the wafer material has high transparency, if... Figure 1 When calibrating a wafer position detection device, as the wafer passes through the wafer transfer port, a portion of the light emitted by the optical sensor 20 still passes through the wafer and is reflected back to the optical sensor 20 by the reflector 1. Therefore, it is difficult to accurately calculate the direction and distance that the wafer needs to be corrected. If... Figure 2 When the wafer position detection device calibrates the wafer, as the wafer passes through the wafer transfer port, a portion of the light emitted by the signal transmitter still passes through the wafer and is received by the signal receiver, making it difficult to accurately calculate the direction and distance that the wafer needs to be corrected.

[0043] For example, when the wafer warpage is large, the following methods are used: Figure 1 When calibrating a wafer position detection device, as the wafer passes through the wafer transfer port, the light emitted by the optical sensor 20 directly enters the reflector 1 at the warped portion and is reflected back to the optical sensor 20, making it difficult to accurately calculate the direction and distance that the wafer needs to be corrected. Using... Figure 2 When the wafer position detection device calibrates the wafer, as the wafer passes through the wafer transfer port, the light emitted by the signal transmitter directly enters the signal receiver 23 at the warped part and is received by the signal receiver 23, making it difficult to accurately calculate the direction and distance that the wafer needs to be corrected.

[0044] Therefore, the inventors discovered through research that when the wafer type changes, such as a change in wafer warpage or material, the operating parameters of the optical sensor unit can be adjusted as the wafer passes through the wafer transfer port to ensure that the light emitted by the optical sensor unit is totally reflected by the wafer. For example, this can be achieved by changing the wavelength of the light emitted by the optical sensor unit. Alternatively, an angle adjustment mechanism can be provided for the optical sensor unit and the reflector. When the wafer type changes, the angle adjustment mechanism can be rotated to rotate the optical sensor unit, thus changing the incident angle of the light emitted by the optical sensor unit to ensure total reflection of the light emitted by the optical sensor unit. Therefore, when the wafer type changes, only the operating parameters of the optical sensor unit need to be adjusted according to the wafer type to ensure that the light emitted by the optical sensor unit undergoes total reflection on the wafer surface when the wafer passes through the wafer transfer port. This avoids downtime caused by the reflection of light after passing through the wafer when calculating the time the optical sensor unit is blocked, further improving the accuracy of wafer calibration.

[0045] Based on the above concept, embodiments of the present invention provide a wafer position detection device and a wafer position calibration method. The wafer position detection device and wafer position calibration method provided by the embodiments of the present invention will be described exemplarily below with reference to the accompanying drawings.

[0046] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0047] Exemplary device

[0048] As a first aspect of the present invention, the present invention provides a semiconductor process apparatus, such as... Figure 3 As shown, the semiconductor process equipment 10 includes a transfer chamber 101 and at least one process chamber 102, as well as a wafer position detection device, such as... Figure 3As shown, a wafer position detection device is installed at the wafer transfer port 6 between the process chamber 102 and the transfer chamber 101 of the semiconductor process equipment 10, and is used to detect whether there is a deviation in the wafer position. The process chamber 102 and the transfer chamber 101 are selectively connected. When the process chamber 102 and the transfer chamber 101 are connected, the robot arm 103 carries the wafer through the wafer transfer port to transfer the wafer into the process chamber 102 connected to the transfer chamber 101 for wafer processing; or it removes the wafer from the process chamber 102 after the process steps have been completed. When the robot arm 103 carries the wafer through the wafer transfer port, the wafer position detection device detects the wafer position.

[0049] Optionally, the semiconductor process equipment 10 also includes: a controller ( Figure 3 (Not shown in the image) When the wafer passes through the wafer transfer port, the controller controls the wafer position detection device to detect the position of the target wafer, and calibrates the position of the target wafer based on the initial position detected by the wafer detection device.

[0050] Specifically, such as Figures 4-6 As shown, the wafer position detection device includes an optical sensor group disposed below the wafer transfer port 6. The optical sensor group includes two optical sensor units 2 disposed along a first horizontal direction (x direction in the figure), which is perpendicular to the wafer transfer direction (y direction in the figure). The optical sensor unit 2 includes a first light emitting unit 21 and a first light receiving unit 22 corresponding to the first light emitting unit 21. The light emitted by the first light emitting unit 21 has an angle with the vertical direction (i.e., the normal direction of the wafer to be transferred, z direction in the figure), so that when the wafer passes through, the light emitted by the first light emitting unit 21 is reflected at the wafer-air interface. For example, when the wafer is a non-transparent wafer, the light emitted by the first light emitting unit 21 is reflected at the air-wafer interface (in this embodiment, the lower surface of the wafer), and then reflected back into the air. When the wafer is a transparent wafer, the light emitted by the first light emitting unit 21 undergoes total internal reflection at the interface between the wafer and the air. That is, the light emitted by the first light emitting unit 21 enters the transparent material of the wafer. Since the material of the wafer is an optically dense medium relative to the air, the light undergoes total internal reflection at the interface between the wafer and the air (in this embodiment, the upper surface of the wafer), and then returns to the air via the wafer.

[0051] An optical sensor parameter adjustment mechanism is used to adjust the operating parameters of the optical sensor unit 2, including the emission wavelength or the angle of the emitted light.

[0052] When the material of the wafer passing through the wafer transfer port changes, or when the wafer warpage changes, the operating parameters of the optical sensor unit 2 can be adjusted by the optical sensor parameter adjustment mechanism. This adjusts the light emitted by the first light emitting unit 21 in the optical sensor unit 2 to undergo total internal reflection at the wafer-air interface (i.e., the light emitted by the first light emitting unit 21 is completely blocked by the wafer), thereby detecting the initial position of the wafer. Simultaneously, based on the time the light emitted by the first light emitting unit 21 is blocked by the wafer, the direction and distance that the wafer position needs to be corrected are calculated, and the initial position is calibrated according to the required direction and distance, thus achieving wafer arrival position calibration. The wafer position detection device provided in this application can detect different wafers without changing the sensor.

[0053] In one embodiment of this application, when the first light emitting unit 21 and the first light receiving unit 22 of the optical sensor unit 2 are located on the same side of the wafer transmission path, for example, the first light emitting unit 21 and the first light receiving unit 22 are integrated in the same optical sensor unit 2, such as... Figures 4-5 As shown, the wafer position detection device further includes a first reflective element group, which comprises a plurality of first reflective elements 11. The reflective elements can be, for example, reflective plates or other elements with reflective surfaces. Two first reflective elements 11 are respectively disposed corresponding to two optical sensor units 2, and the first reflective element 11 is located on the path of the light emitted by the first light emitting unit 21 in the optical sensor unit 2. The first reflective element 11 has a reflective surface, and during operation, the reflective surface of the first reflective element is perpendicular to the light emitted by its corresponding first light emitting unit 21. Therefore, when the wafer has not passed the corresponding target position, the light emitted by the first light emitting unit 21 of the optical sensor unit 2 can be reflected by the corresponding first reflective element 11 to the optical sensor unit 2 and received by the first light receiving unit 22 of the optical sensor unit 2; when the wafer passes the corresponding target position, the light emitted by the first light emitting unit 21 in the optical sensor unit 2 is reflected at the wafer-air interface. Since the light emitted by the first light emitting unit 21 has an angle with the normal direction of the wafer, the reflected light does not return along the original path. Therefore, the light emitted by the first light emitting unit 21 is not received by the first light receiving unit 22 at this time. Thus, the optical sensor unit 2 and the corresponding first reflective element 11 can detect whether the light emitted by the optical sensor unit is blocked by the wafer passing through the wafer transfer port 6.

[0054] Specifically, the position of the first reflective element group corresponds to the position of the optical sensor group. Therefore, when the optical sensor group is positioned below the wafer transport path, the first reflective element group is positioned above the wafer transport path, such as... Figure 4As shown. When the optical sensor group is positioned above the wafer transport path, the first reflective element group is positioned below the wafer transport path.

[0055] In this case, such as Figure 5 As shown, the optical sensor parameter adjustment mechanism includes: a first angle adjustment component, which includes two first angle adjustment mechanisms 51, which are respectively used to rotate two first reflective elements 11 to adjust the angle of the reflective surface of the first reflective element 11; and a second angle adjustment component, which includes two second angle adjustment mechanisms 52, which are respectively used to rotate two optical sensor units 2.

[0056] When the wafer passing through the wafer transfer port changes (for example, the wafer material changes or the edge warping of the wafer changes), the optical sensor unit 2 is rotated by adjusting the second angle adjustment mechanism 52, so that the light emission angle changes, and the light emitted by the first light emitting unit in the optical sensor unit 2 is totally reflected by the wafer; the first reflective element 11 is rotated by adjusting the first angle adjustment mechanism 51, so that the reflective surface of the first reflective element 11 is still perpendicular to the light emitted by the optical sensor unit 2.

[0057] In another embodiment of this application, the first light emitting unit 21 and the first light receiving unit 22 of the optical sensor unit 2 are located on different sides of the wafer transmission path, for example, in the following two cases:

[0058] (1) For example, the first light emitting unit 21 is disposed below the wafer transmission path (and...). Figure 5 The first light receiving unit 22 is positioned above the wafer transmission path (i.e., in the same location as the first light receiving unit 22). Figure 5 (The location of the reflective element in the middle), the first light receiving unit 22 is located on the light emission path of the first light emitting unit 21. When no wafer passes through the corresponding target position, the light emitted by the first light emitting unit 21 can be received by the first light receiving unit 22.

[0059] (2) The first light emitting unit 21 is disposed above the wafer transmission path (i.e., Figure 5 The first light receiving unit 22 is located below the wafer transmission path (where the reflective element is located). Figure 5 (In the same position), the first light receiving unit 22 is located on the light emission path of the first light emitting unit 21, and the light emitted by the first light emitting unit 21 can be received by the first light receiving unit 22.

[0060] In this case, the optical sensor parameter adjustment mechanism may include:

[0061] The third angle adjustment assembly includes two third angle adjustment mechanisms 53, which are respectively used to rotate the two first light emitting units 21; and

[0062] The fourth angle adjustment component includes two fourth angle adjustment mechanisms 54, which are used to rotate the two first light receiving units 22 respectively.

[0063] When the wafer passing through the wafer transfer port changes (for example, the wafer material changes or the edge warping of the wafer changes), the first light emitting unit 21 and / or the first light receiving unit 22 are adjusted by adjusting the third angle adjustment mechanism 53 and / or the fourth angle adjustment mechanism 54, so that the light emitted by the first light emitting unit 21 is totally reflected by the wafer, thereby accurately detecting the initial position of the wafer.

[0064] It is understood that in some other embodiments of the present invention, the angle adjustment component may not be included. That is, the optical sensor parameter adjustment mechanism is a wavelength adjustment mechanism, which is used to adjust the wavelength emitted by the first light emitting unit 21. In other words, the optical sensor unit 2 can be kept at a preset angle, and by adjusting the wavelength emitted by the first light emitting unit 21, the light can undergo total internal reflection at wafers of different materials.

[0065] In one embodiment of this application, as Figure 4 As shown, the wafer position detection device also includes a second reflective element group disposed above the wafer transport path and a ranging sensor group disposed below the wafer transport path. The ranging sensor group includes two ranging sensors 3, and the second reflective element group includes two second reflective elements 12. The two ranging sensors 3 are respectively disposed corresponding to the two second reflective elements 12. Specifically, each second reflective element 12 has a reflective surface, and the reflective surface of the second reflective element is perpendicular to the light emitted by the ranging sensor.

[0066] The ranging sensor 3 includes a light emitting element and a light receiving element. The light emitted by the light emitting element of the ranging sensor 3 can be reflected back to the ranging sensor 3 by the corresponding second reflective element 12 and received by the light receiving element of the ranging sensor 3. By setting the ranging sensor 3 and the corresponding second reflective element 12, it is possible to detect whether the robot arm 103 is carrying a wafer, so as to detect whether a wafer passes through the wafer transfer port 6.

[0067] Exemplary methods

[0068] The wafer position calibration method provided by this invention is based on Figures 4-5 The method for calibrating the wafer position using the wafer position detection device shown.

[0069] Figure 6 The diagram shown is a schematic flowchart of a wafer position calibration method provided in an embodiment of the present invention. Figure 6 As shown, the wafer position calibration method includes the following steps:

[0070] S1: Control the wafer position detection device to detect the position of the target wafer;

[0071] Specifically, the target wafer is the wafer that the robot is carrying and passing through the wafer transfer port at the current moment. The target wafer can be the current wafer of the current process. For example, if at the current moment, the current wafer of the current process is being carried by the robot and passing through the wafer transfer port, then the target wafer is the current wafer of the current process.

[0072] The target wafer can also be a test wafer. For example, before the current process, a test wafer can be used for calibration. The robot carries a test wafer of the same type as the current wafer in the current process to the wafer transfer port. The wafer position detection device detects the position of the target wafer and performs calibration on the detected initial position. This allows the current wafer to be calibrated without readjusting the operating parameters of the optical sensor unit when it arrives at the wafer transfer port.

[0073] Specifically, the wafer type of the target wafer can be determined in the following ways:

[0074] (1) Material of the target wafer:

[0075] The material of a target wafer can be determined based on its refractive index. For example, the material of a target wafer can be determined by obtaining its refractive index, and thus the wafer type can be determined.

[0076] (2) Material of the coating on the target wafer:

[0077] Specifically, the coating on the target wafer refers to a layer of material different from the wafer itself, formed on the wafer surface through various methods such as deposition and oxidation. In particular, the material of the coating on the target wafer can be determined by its refractive index, thereby determining the wafer type.

[0078] (3) The material of the photoresist on the target wafer:

[0079] Specifically, the material of the photoresist on the target wafer can be determined by the refractive index of the photoresist applied to the target wafer, thereby determining the wafer type of the target wafer.

[0080] (4) Warpage of the target wafer:

[0081] A camera device can be used to photograph the target wafer to obtain an image including the target wafer. The image can then be analyzed to determine the warpage of the target wafer, and thus determine the wafer type of the target wafer.

[0082] Specifically, the method to determine whether the wafer type of the target wafer is the same as the wafer type of the previous wafer process can be as follows:

[0083] (1) Determine whether the refractive index of the first surface of the target wafer is the same as that of the first surface of the wafer in the previous wafer process, where the first surface refers to the surface of the wafer close to the optical sensor when the wafer passes through the wafer transfer port.

[0084] When the difference between the refractive index of the first surface of the target wafer and the refractive index of the first surface of the wafer in the previous wafer process is not equal to 0, it can be determined that the refractive index of the first surface of the target wafer is different from that of the first surface of the wafer in the previous wafer process. This indicates that the material of the target wafer is different from that of the wafer in the previous wafer process, and further confirms that the wafer type of the target wafer is different from that of the wafer in the previous wafer process.

[0085] (2) Determine whether the refractive index of the second surface of the target wafer is the same as that of the second surface of the wafer in the previous wafer process, wherein the second surface refers to the surface of the wafer that is far away from the optical sensor unit when the wafer passes through the wafer transfer port.

[0086] When the difference between the refractive index of the second surface of the target wafer and the refractive index of the second surface of the wafer in the previous wafer process is not equal to 0, it can be determined that the refractive index of the second surface of the target wafer is different from that of the second surface of the wafer in the previous wafer process. This indicates that the coating material of the target wafer is different from that of the wafer in the previous wafer process, and further confirms that the wafer type of the target wafer is different from that of the wafer in the previous wafer process.

[0087] (3) Determine whether the warpage of the target wafer is the same as that of the wafer in the previous wafer process.

[0088] It should be noted that when the wafer type of the target wafer is different from the wafer type of the previous wafer process, it can have one of the three different wafer types mentioned above, or it can have two or more of the three different wafer types. For example, the difference between the wafer type of the target wafer and the wafer type of the previous wafer process may be reflected in the fact that the material of the target wafer is different from the material of the wafer in the previous wafer process; or, for example, the difference between the wafer type of the target wafer and the wafer type of the previous wafer process may be reflected in the fact that the material of the target wafer is different from the material of the wafer in the previous wafer process, and the coating material of the target wafer is different from the coating material of the wafer in the previous wafer process.

[0089] When the target wafer passes through the wafer transfer port, the optical sensor parameter adjustment mechanism in the wafer position detection device adjusts the operating parameters of the optical sensor unit to adjust the light emitted by the first light emitting unit in the optical sensor unit 2 to undergo total internal reflection at the wafer-air interface (i.e., the light emitted by the first light emitting unit is completely blocked by the wafer) in order to detect the initial position of the wafer.

[0090] S2: Based on the initial position of the target wafer, calibrate the position of the target wafer.

[0091] Specifically, the correction method for adjusting the position of the target wafer can be as follows:

[0092] The target correction direction and target correction distance are calculated based on the duration of obstruction of the light emitted by the first light emitting unit in the two optical sensor units by the target wafer, and the target wafer is calibrated based on the target correction direction and target correction distance.

[0093] Specifically, the time during which the optical sensor unit is blocked refers to the duration during which the first light receiving unit in the optical sensor unit does not receive the reflected signal of the light emitted by the first light emitting unit when the target wafer passes through the wafer transfer port.

[0094] The method for calculating the duration of light blocking by the target wafer from the first light-emitting unit in the optical sensor unit emission is as follows:

[0095] When the target wafer passes through the wafer transfer port, the first duration and the second duration of the reflection signal of the light emitted by the first light receiving unit in the two optical sensing units not being received by the first light emitting unit are obtained respectively; the first duration and the second duration are the blocking duration of the light emitted by the first light emitting unit in the two optical sensor units being blocked by the target wafer.

[0096] The wafer position calibration method provided by this invention allows for adjustment of the operating parameters of the optical sensor unit via an optical sensor parameter adjustment mechanism when the target wafer passes through the wafer transfer port. This adjustment is made so that the light emitted by the first light emitting unit in the optical sensor unit undergoes total internal reflection at the wafer-air interface (i.e., the light emitted by the first light emitting unit is completely blocked by the wafer), thereby detecting the initial position of the wafer. Simultaneously, the direction and distance requiring wafer position correction are calculated based on the duration of the blocking of the light emitted by the first light emitting unit, and the initial position is calibrated according to the required direction and distance, thus achieving wafer position calibration. The wafer position detection device provided in this application can detect different wafers without changing the sensor.

[0097] In another embodiment of this application, such as Figure 7-8 As shown, the specific detection method for controlling the wafer position detection device to detect the position of the target wafer, namely S1 (controlling the wafer position detection device to detect the position of the target wafer), specifically includes the following steps:

[0098] S11 (or S11'): (Through the optical sensor parameter adjustment mechanism) Adjust the operating parameters of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air.

[0099] Specifically, the operating parameters of the optical sensor unit include, but are not limited to: the incident angle of the light emitted by the optical sensor unit, and the wavelength of the light emitted by the optical sensor unit.

[0100] When adjusting the operating parameters of the optical sensor unit, you can adjust only one parameter, such as adjusting only the incident angle or the wavelength of the light emitted by the optical sensor unit; or you can adjust two parameters simultaneously, such as adjusting both the incident angle and the wavelength of the light emitted by the optical sensor unit.

[0101] Specifically, the method for determining whether the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and air can be as follows:

[0102] When the optical sensor unit does not receive the reflected light from the emitted light, meaning the light emitted by the optical sensor unit is not reflected by the corresponding first reflective element, the optical sensor unit will not receive the reflected light from the emitted light. This indicates that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air. Figure 9 As shown.

[0103] Optionally, as described above, the target wafer can be the current wafer of the current process or a reference wafer of the current process. The detection method used by the wafer position detection device to detect the position of the target wafer also differs. Specifically:

[0104] (1) As Figure 7 As shown, when the target wafer is the current wafer of the current process, S1 (controlling the wafer position detection device to detect the position of the target wafer) may include the following steps:

[0105] S11: Adjust the operating parameters of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air;

[0106] S12: Control the target wafer to pass through the target detection area of ​​the optical sensor assembly to detect the position of the target wafer and obtain the initial position of the target wafer.

[0107] Specifically, the target detection area of ​​the optical sensor assembly refers to the area where the light emitted by the first optical sensor unit in the optical sensor assembly undergoes total internal reflection at the interface between the target wafer and the air, and the light emitted by the second optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air, that is, the area where the light emitted by the first optical sensor unit and / or the second optical sensor unit is blocked by the target wafer.

[0108] (2) Figure 8 As shown, when the target wafer is a test wafer, S1 (controlling the wafer position detection device to detect the position of the target wafer) specifically includes the following steps:

[0109] S10': Controls the target wafer to pass through the target detection area of ​​the optical sensor assembly;

[0110] S11': Adjust the operating parameters of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air, so that the optical sensor unit is blocked by the target wafer.

[0111] S12': Control the target wafer to pass through the target detection area of ​​the optical sensor assembly to detect the position of the target wafer and obtain the initial position of the target wafer.

[0112] That is, once the wafer of the current process is transferred to the target detection area by the robot, the wafer position detection device can be directly controlled to detect the wafer of the current process to obtain the initial position, without having to readjust the working parameters of the optical sensor unit.

[0113] In one embodiment of the present invention, the specific adjustment method for adjusting the operating parameters of the optical sensor unit, namely S11 or S11' (adjusting the operating parameters of the optical sensor unit), includes the following steps:

[0114] The angle of incidence of the light emitted by the optical sensor unit on the target wafer surface is adjusted to ensure total internal reflection at the interface between the target wafer and air. Specifically, the adjustment method for the operating parameters of the optical sensor unit varies depending on the type of target wafer (e.g., different edge warpage, different wafer material, or different coating material) and the structure of the wafer position detection device, as detailed below:

[0115] (1) The wafer position detection device is Figure 5In the first structure shown, the wafer position detection device includes two optical sensor units and two corresponding first reflective elements, and the optical sensor parameter adjustment mechanism includes a first angle adjustment component, which includes two first angle adjustment mechanisms, each used to rotate the two first reflective elements; and a second angle adjustment component, which includes two second angle adjustment mechanisms, each used to rotate the two optical sensor units.

[0116] use Figure 5 The specific adjustment method for adjusting the incident angle of the light emitted by the optical sensor unit on the target wafer surface using the wafer position detection device of the first structure shown, namely S111 (adjusting the incident angle of the light emitted by the optical sensor unit on the target wafer surface), specifically includes the following steps:

[0117] S111 (or S111'): Adjust the rotation of the second angle adjustment mechanism and the first angle adjustment mechanism to drive the optical sensor unit and the corresponding first reflective element to rotate respectively, so as to adjust the incident angle of the light emitted by the optical sensor unit, so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air.

[0118] Specifically, adjusting the rotation of the second angle adjustment mechanism can rotate the optical sensor unit, thereby adjusting the incident angle of the light emitted by the optical sensor unit. When the incident angle is adjusted to a certain angle, the light emitted by the optical sensor unit will undergo total internal reflection at the interface between the target wafer and the air. When the optical sensor unit does not receive the reflected light from the first reflective element, it indicates that the light emitted by the optical sensor unit has undergone total internal reflection at the interface between the target wafer and the air.

[0119] When the second angle adjustment mechanism is adjusted to make the optical sensor unit rotate, in order to adapt to the optical sensor unit, the rotation of the first angle adjustment mechanism is adjusted to drive the first reflective element to rotate. The rotation angle of the first reflective element can be the same as the rotation angle of the optical sensor unit; that is, the first reflective element rotates until its reflective surface is perpendicular to the light emitted by the optical sensor unit.

[0120] Optionally, when the refractive index of the coating on the target wafer is different from the refractive index of the coating on the wafer in the previous wafer process, S111 (the specific adjustment method of adjusting the rotation of the second angle adjustment mechanism and the first angle adjustment mechanism to drive the optical sensor unit and the corresponding first reflective element to rotate respectively) specifically includes the following steps:

[0121] Incident angle calculation step: Calculate the reference incident angle based on the refractive index of the coating on the target wafer and the refractive index of air;

[0122] If the target wafer's coating is of a different wafer type, it means that the refractive index of the target wafer's coating is different from the refractive index of the coating of the wafer in the previous wafer process.

[0123] Specifically, the reference incident angle is the critical incident angle at which the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air;

[0124] Specifically, the formula for calculating the critical incident angle based on the refractive index of the coating on the target wafer and the refractive index of air is shown in Formula 1:

[0125] A > arcsin(n1 / n2)

[0126] In Formula 1, A is the critical incident angle, n1 is the refractive index of the photoresist, and n2 is the refractive index of air.

[0127] Adjustment angle calculation step: Calculate the adjustment angle based on the initial incident angle and reference incident angle of the wafer corresponding to the previous wafer process;

[0128] After calculating the critical incident angle corresponding to the target wafer, the initial incident angle corresponding to the wafer in the previous wafer process is obtained (this initial incident angle can be the critical incident angle at which the light emitted by the optical sensor unit at the wafer-air interface undergoes total internal reflection when the wafer passes the target ranging position of the optical sensor group in the previous wafer process; it can be any other incident angle. After each wafer process is completed, the incident angle of the optical sensor unit when the wafer passes the target ranging position of the optical sensor group can be recorded for future reference). The adjustment angle that needs to be adjusted is then calculated based on this initial incident angle and the reference incident angle.

[0129] Angle adjustment step: Adjust the first angle adjustment mechanism and the second angle adjustment mechanism to rotate and adjust the angle so that the incident angle of the light emitted by the optical sensor unit is equal to the reference incident angle.

[0130] Once the adjustment angle is calculated, the first and second angle adjustment mechanisms can be rotated to adjust the angle so that the incident angle of the light emitted by the optical sensor unit is equal to the reference incident angle. This allows the light emitted by the optical sensor unit to undergo total internal reflection at the interface between the target wafer and the air.

[0131] When the coating material of the target wafer changes, the critical incident angle can be calculated based on the refractive index of the coating and the refractive index of air. Based on the critical incident angle and the initial incident angle corresponding to the wafer in the previous wafer process, the adjustment angle that needs to be adjusted can be calculated to adjust the working parameters of the optical sensor unit.

[0132] Optionally, when the target wafer type differs from the wafer type of the previous wafer process (e.g., different wafer materials, different wafer plating, or different wafer warpage), the specific adjustment method of S111' (the specific adjustment method for adjusting the rotation of the second angle adjustment mechanism and the first angle adjustment mechanism to drive the optical sensor unit and the corresponding first reflective element to rotate respectively) specifically includes the following steps:

[0133] Angle adjustment step: Adjust the rotation of the first angle adjustment mechanism and / or the second angle adjustment mechanism at least once until the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air.

[0134] When the target wafer type differs from the wafer type of the previous wafer process (e.g., different wafer material, different wafer plating, or different wafer warpage), the rotation angle of the first angle adjustment mechanism is randomly adjusted. This adjustment can be performed multiple times or only once. During adjustment, the optical sensor unit remains in a triggered state to detect whether it can receive reflected light from the emitted light element. If it can receive reflected light, the rotation of the first angle adjustment mechanism continues. If it cannot receive reflected light, it indicates that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and air, and the adjustment stops.

[0135] Specifically, when the refractive index of the target wafer material is different from that of the wafer material in the previous wafer process, i.e., when the material of the target wafer is different from that of the wafer material in the previous wafer process, (adjusting the first angle adjustment mechanism and / or the second angle adjustment mechanism at least once) includes the following steps:

[0136] When the refractive index of the target wafer material is greater than that of the wafer material in the previous wafer process, the first angle adjustment mechanism and the second angle adjustment mechanism are adjusted counterclockwise at least once; or

[0137] When the refractive index of the target wafer material is less than the refractive index of the wafer material in the previous wafer process, the first angle adjustment mechanism and the second angle adjustment mechanism are adjusted clockwise at least once.

[0138] In this invention, when the target wafer is different from the wafer of the previous wafer process (e.g., different wafer material, different wafer plating, or different wafer warpage), the first angle adjustment mechanism and the second angle adjustment mechanism can be adjusted randomly and at least once. During the adjustment, the optical sensor unit is always in a triggered state to detect whether the reflected light emitted by the light source can be received by the corresponding first reflective element. If it can be received, the rotation of the first angle adjustment mechanism continues to be adjusted. If it is not received, it indicates that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air, and the adjustment is stopped.

[0139] It should be noted that: S111 is: when the refractive index of the coating on the target wafer is different from that of the coating on the wafer in the previous wafer process, the critical incident angle at which the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and air can be calculated based on the refractive index of the coating and the refractive index of air. The first rotation and the second angle adjustment mechanism are then adjusted so that the incident angle of the light emitted by the optical sensor unit is equal to the critical incident angle, thus causing total internal reflection of the light emitted by the optical sensor unit at the interface between the target wafer and air. S111' is: when the target wafer is of a different type than the wafer in the previous wafer process (e.g., different wafer material, different wafer coating, or different wafer warpage), the first angle adjustment mechanism and the second angle adjustment mechanism are adjusted at least once until the optical sensor unit no longer receives the reflected optics of the emitted light reflected back by the corresponding first reflective element, at which point the adjustment stops.

[0140] (2) The wafer position detection device is Figure 5 The second structure shown is as follows: the wafer position detection device includes two optical sensor units, in which a first light emitting unit and a first light receiving unit are respectively disposed on both sides of the wafer transmission path, and the optical sensor parameter adjustment mechanism includes a third angle adjustment component, which includes two third angle adjustment mechanisms, each used to rotate the two first light emitting units; and a fourth angle adjustment component, which includes two fourth angle adjustment mechanisms, each used to rotate the two first light receiving units.

[0141] use Figure 5 The specific adjustment method for adjusting the incident angle of the light emitted by the optical sensor unit on the target wafer surface using the wafer position detection device shown in the second structure, namely S111 or S111' (adjusting the incident angle of the light emitted by the optical sensor unit on the target wafer surface), specifically includes the following steps:

[0142] The third and fourth angle adjustment mechanisms are rotated to drive the first light emitting unit and the first light receiving unit to rotate respectively, so as to adjust the incident angle of the light emitted by the first light emitting unit, so that the light emitted by the first light emitting unit undergoes total internal reflection at the interface between the target wafer and the air.

[0143] The specific adjustment methods are the same as those used in S111 and S111' for adjusting the rotation of the first and second angle adjustment mechanisms, and will not be elaborated further here.

[0144] In one embodiment of the present invention, the specific adjustment method for adjusting the operating parameters of the optical sensor unit, namely S11 or S11' (adjusting the operating parameters of the optical sensor unit), includes the following steps:

[0145] S112: Adjust the emission wavelength of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and air, specifically including the following steps:

[0146] Target wavelength calculation step: Based on the refractive index of the coating of the target wafer, the refractive index of the coating of the wafer in the previous wafer process, and the initial wavelength of the light emitted by the optical sensor unit, calculate the target wavelength. The target wavelength is the wavelength of the second light emitted by the optical sensor unit when total internal reflection occurs at the interface between the target wafer and the air.

[0147] Optionally, the initial wavelength is the wavelength of the light emitted by the optical sensor unit corresponding to the wafer in the previous wafer process when total internal reflection occurs at the interface between the wafer and the air.

[0148] Specifically, the formula for calculating the target wavelength is shown in Formula 2:

[0149] n1 / n2=λ1 / λ2

[0150] In Formula 2, λ1 is the target wavelength to be adjusted, n1 is the refractive index of the coating on the target wafer, n2 is the refractive index of the coating on the wafer corresponding to the previous wafer process, and λ2 is the wavelength of the light emitted by the optical sensor unit corresponding to the wafer in the previous wafer process.

[0151] Wavelength adjustment step: Adjust the initial wavelength of the light emitted by the optical sensor unit to the target wavelength.

[0152] Once the target wavelength λ1 is calculated, the adjustment wavelength Δλ that needs to be adjusted can be calculated. The formula for calculating the adjustment wavelength is shown in Formula 3:

[0153] △λ=λ2(n1 / n2-1)

[0154] In Formula 3, Δλ is the adjustment wavelength, n1 is the refractive index of the coating on the target wafer, n2 is the refractive index of the coating on the wafer corresponding to the previous wafer process, and λ2 is the wavelength of the light emitted by the optical sensor unit corresponding to the wafer in the previous wafer process.

[0155] Once the adjustment wavelength Δλ is calculated, the initial wavelength of the optical sensor unit can be adjusted to the target wavelength, so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air.

[0156] In another embodiment of the invention, such as Figure 4 As shown, the wafer position detection device also includes a ranging sensor group, which comprises two ranging sensor units arranged along a first horizontal direction. Each ranging sensor unit includes a second light emitting unit and a second light receiving unit. Correspondingly, as... Figure 10 As shown, prior to S1, the wafer position calibration method further includes the following steps:

[0157] S01: Obtain the operating status of the ranging sensor;

[0158] The working state includes the triggered state and the non-triggered state.

[0159] Specifically, the triggered state refers to a working state, capable of detecting the corresponding signal and sending it to the corresponding signal receiver (e.g., establishing a communication connection with the controller). The non-triggered state refers to a non-working state, unable to detect the corresponding signal or send it to the corresponding signal receiver (e.g., disconnected from the controller).

[0160] When the ranging sensor is in the triggered state, it can be determined that the ranging sensor is turned on to obtain the transmission signal, and the target detection area can be determined based on the transmission signal.

[0161] S02: Determine whether a target wafer has passed through the target detection area of ​​the ranging sensor;

[0162] Specifically, the method for determining whether a target wafer has passed through the target detection area is as follows:

[0163] The distance the signal travels is calculated based on the signals emitted and received by the ranging sensor. When a target wafer passes through the target detection area, the emitted signal from the ranging sensor is reflected back by the target wafer. The ranging sensor can then calculate the first distance of signal propagation based on the reflected signal, the emitted signal, and the time interval. The first distance is the distance between the ranging sensor and the target wafer. When no target wafer passes through the target detection area, the emitted signal from the ranging sensor is reflected back by the corresponding second reflective element. The ranging sensor can then calculate the second distance of signal propagation based on the reflected signal, the emitted signal, and the time interval. The second distance is the distance between the ranging sensor and the corresponding second reflective element. When both ranging sensors detect a first distance less than a second distance, it indicates that a target wafer has passed through the target detection area. A schematic diagram of the structure when a target wafer passes through the target detection area is shown below. Figure 11 As shown.

[0164] When the result of S02 is that a target wafer has passed through the target detection area, the optical sensor component is triggered, i.e., S03 is executed.

[0165] S03: Trigger the optical sensor assembly to detect the position of the target wafer;

[0166] Specifically, triggering the optical sensor assembly refers to controlling the optical sensor unit to operate and controlling the optical sensor unit to communicate with the controller, so that the optical sensor unit can transmit signals to the controller, and then executing S1: controlling the wafer position detection device to detect the position of the target wafer; and S2: calibrating the position of the target wafer according to the initial position of the target wafer. The methods of S1 and S2 are as described above, and will not be repeated here.

[0167] This invention first determines whether a target wafer passes through the target detection area of ​​the optical sensor group. When a target wafer passes through the target detection area, the optical sensor unit is triggered to adjust the operating parameters of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air.

[0168] In another embodiment of the present invention, after S2, the wafer position calibration method further includes the following steps:

[0169] S3: When the optical sensor unit receives the reflected light corresponding to the light emitted by the optical sensor unit for the first time during the process of the robot moving the target wafer through the target detection area of ​​the optical sensor assembly, the optical sensor group is controlled to disconnect so that the optical sensor group is in a non-triggered state.

[0170] After the target wafer is calibrated in S2, the robot arm will transport the target wafer to the process chamber. When the target wafer passes through the target detection area of ​​the sensor group, the optical sensor unit is always in the triggered state, constantly emitting light and determining whether to receive the reflected light after it is reflected by the first reflective element. When the reflected light is received for the first time, it means that the target wafer has passed through the target detection area. At this time, the optical sensor unit is controlled to be in the non-triggered state. At this time, the optical sensor unit cannot transmit signal values ​​to the controller, thus avoiding false alarms caused by the robot arm blocking the optical sensor unit.

[0171] Exemplary process equipment

[0172] Another embodiment of this specification also provides a semiconductor process apparatus, see [link to relevant documentation] Figure 4 As shown, the semiconductor process equipment has a process chamber and a transfer chamber. The semiconductor process equipment has a wafer transfer port and a robotic arm. The semiconductor process equipment also includes a controller, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the wafer position calibration method described above to calibrate the position of the target wafer.

[0173] The internal structure of the controller in this semiconductor process equipment can be as follows: Figure 12 As shown, the controller in this semiconductor process equipment includes a processor, memory, network interface, and input devices connected via a system bus. The processor provides computing and control capabilities. The controller's memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores an operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The controller's network interface is used to communicate with external terminals via a network connection. When the computer program is executed by the processor, it follows the steps of the wafer position calibration method according to various embodiments of this specification as described in the above embodiments.

[0174] The processor may include the main processor, as well as baseband chips, modems, etc.

[0175] The memory stores a program that executes the technical solution of this invention, and may also store an operating system and other critical business functions. Specifically, the program may include program code, which includes computer operation instructions. More specifically, the memory may include read-only memory (ROM), other types of static storage devices capable of storing static information and instructions, random access memory (RAM), other types of dynamic storage devices capable of storing information and instructions, disk storage, flash memory, etc.

[0176] The processor can be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits used to control the execution of the program of the present invention. It can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), an off-the-shelf programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0177] Input devices may include devices that receive data and information input by the user, such as keyboards, mice, cameras, scanners, light pens, voice input devices, touch screens, pedometers, or gravity sensors.

[0178] Output devices may include devices that allow information to be output to a user, such as displays, printers, speakers, etc.

[0179] The communication interface may include any transceiver-like device for communicating with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0180] The processor executes the program stored in the memory and calls other devices, which can be used to implement the various steps of any of the wafer position calibration methods provided in the above embodiments of this specification.

[0181] The controller may also include a display component and a voice component. The display component may be an LCD screen or an e-ink screen. The input device of the controller may be a touch layer covering the display component, or a button, trackball or touchpad set on the controller housing, or an external keyboard, touchpad or mouse, etc.

[0182] Those skilled in the art will understand that Figure 12The structure shown is merely a block diagram of a portion of the structure related to the scheme described in this specification, and does not constitute a limitation on the controller to which the scheme described in this specification is applied. A specific controller may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0183] Exemplary computer program products and storage media

[0184] In addition to the methods and devices described above, the wafer position calibration method provided in the embodiments of this specification can also be a computer program product, which includes computer program instructions that, when executed by a processor, cause the processor to perform the steps in the wafer position calibration method according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0185] The aforementioned computer program product can be implemented through hardware, software, or a combination thereof. In one optional embodiment, the computer program product is specifically embodied in a computer storage medium; in another optional embodiment, the computer program product is specifically embodied in a software product, such as a software development kit (SDK), etc.

[0186] The computer program product described herein can be written in any combination of one or more programming languages ​​to perform the operations of the embodiments described herein. These programming languages ​​include object-oriented programming languages ​​such as Java and C++, as well as conventional procedural programming languages ​​such as C or similar languages. The program code can be executed entirely on the controller in the user's semiconductor process equipment, partially on the user's equipment, as a standalone software package, partially on the controller in the user's semiconductor process equipment and partially on the controller in a remote semiconductor process equipment, or entirely on the controller or server in a remote semiconductor process equipment.

[0187] Furthermore, embodiments of this specification also provide a computer-readable storage medium having a computer program stored thereon, the computer program being executed by a processor of the steps in the wafer calibration method according to various embodiments of this specification as described in the "Exemplary Methods" section above.

[0188] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this specification can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM), etc.

[0189] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0190] The embodiments described above are merely illustrative of several implementation methods outlined in this specification. While the descriptions are specific and detailed, they should not be construed as limiting the scope of the solutions provided in this specification. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this specification, and these all fall within the scope of protection of this specification. Therefore, the scope of protection for this patent should be determined by the appended claims.

Claims

1. A wafer position detection device, characterized in that, The wafer position detection device is installed in the semiconductor process equipment and is used to detect the wafer position during wafer transport. The wafer position detection device includes: An optical sensor group, comprising two optical sensor units arranged along a first horizontal direction, the first horizontal direction being perpendicular to the wafer transport direction; Each optical sensor unit includes a first light emitting unit and a first light receiving unit corresponding to the first light emitting unit; The light emitted by the first light emitting unit has an angle with the vertical direction, so that when the wafer passes through, the light emitted by the first light emitting unit is reflected at the wafer-air interface; An optical sensor parameter adjustment mechanism is used to adjust the operating parameters of the optical sensor unit, including the emission wavelength and / or the angle of the emitted light.

2. The detection device according to claim 1, characterized in that, Also includes: A first reflective element group is disposed above the wafer transport path, the first reflective element group including two first reflective elements; The optical sensor group is positioned below the wafer transport path, and the two optical sensor units of the optical sensor group are respectively positioned corresponding to the two first reflective elements; or... A first reflective element group is disposed below the wafer transport path, the first reflective element group including two first reflective elements; the optical sensor group is disposed above the wafer transport path, the two optical sensor units of the optical sensor group are respectively disposed corresponding to the two first reflective elements.

3. The detection device according to claim 2, characterized in that, The optical sensor parameter adjustment mechanism includes: A first angle adjustment assembly, comprising two first angle adjustment mechanisms, each of which is used to rotate one of the two first reflective elements; and The second angle adjustment assembly includes two second angle adjustment mechanisms, each used to rotate one of the optical sensor units.

4. The detection device according to claim 1, characterized in that, The first light emitting unit is disposed above the wafer transmission path, and the first light receiving unit is disposed below the wafer transmission path, with the first light receiving unit located on the light emission path of the first light emitting unit; or The first light emitting unit is disposed below the wafer transmission path, and the first light receiving unit is disposed above the wafer transmission path. The first light receiving unit is located on the light emission path of the first light emitting unit.

5. The detection device according to claim 4, characterized in that, The optical sensor parameter adjustment mechanism includes: A third angle adjustment assembly, comprising two third angle adjustment mechanisms, each mechanism being used to rotate one of the first light emitting units; and... The fourth angle adjustment component includes two fourth angle adjustment mechanisms, each of which is used to rotate one of the two first light receiving units.

6. The detection device according to any one of claims 1-5, characterized in that, Also includes: A ranging sensor group, the ranging sensor group comprising two ranging sensor units arranged along a first horizontal direction, each ranging sensor unit comprising a second light emitting unit and a second light receiving unit; The light emitted by the second light emitting unit is in the vertical direction.

7. The detection device according to claim 6, characterized in that, It also includes a second reflective element group disposed above the wafer transport path, the second reflective element group comprising two second reflective elements; The ranging sensor group is located below the wafer transport path. The ranging sensor group includes two ranging sensors, and the two ranging sensors are respectively configured to correspond to two second reflective elements.

8. A semiconductor process apparatus, characterized in that, include: The process chamber, the transfer chamber, and the wafer position detection device as described in any one of claims 1-7; The wafer position detection device is located at the wafer transfer port between the process chamber and the transfer chamber.

9. The semiconductor process equipment as described in claim 8, characterized in that, Also includes: A wafer position calibration unit adjusts the wafer to a target position based on the initial position of the wafer detected by the wafer position detection device.

10. A wafer position calibration method, characterized in that, Includes the following steps: The wafer position detection device according to any one of claims 1-8 is used to detect the position of the target wafer to obtain the initial position of the target wafer; The position of the target wafer is calibrated based on the initial position of the target wafer detected by the wafer position detection device.

11. The calibration method according to claim 10, characterized in that, The detection of the target wafer's position includes: The operating parameters of the optical sensor unit are adjusted so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air.

12. The calibration method according to claim 11, characterized in that, The adjustment of the operating parameters of the optical sensor unit includes: Adjust the incident angle of the light emitted by the optical sensor unit on the surface of the target wafer so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and air, or The wavelength of the light emitted by the optical sensor unit is adjusted so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air.

13. The calibration method according to claim 11, characterized in that, The target wafer is the current wafer of the current process, and the detection of the position of the target wafer includes: Adjust the operating parameters of the optical sensor unit so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and air; The target wafer is controlled to pass through the target detection area of ​​the optical sensor assembly to detect the position of the target wafer and obtain the initial position of the target wafer.

14. The calibration method according to claim 11, characterized in that, The target wafer is a test wafer, and the detection of the position of the target wafer includes: Control the target wafer to pass through the target detection area of ​​the optical sensor assembly; The operating parameters of the optical sensor unit are adjusted so that the light emitted by the optical sensor unit undergoes total internal reflection at the interface between the target wafer and the air, thereby blocking the optical sensor unit.

15. The calibration method according to claim 11, characterized in that, The wafer position detection device further includes: a ranging sensor group, the ranging sensor group including two ranging sensor units arranged along a first horizontal direction, each ranging sensor unit including a second light emitting unit and a second light receiving unit. The calibration method further includes: The operating status of the ranging sensor is obtained to determine whether the target wafer has passed through the target detection area of ​​the ranging sensor; When the target wafer passes through the target detection area of ​​the ranging sensor, the optical sensor assembly is triggered to detect the position of the target wafer.

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