Semiconductor device
By covering the electrode end with a first resin component featuring an uneven structure in the terminal region of the semiconductor device, the problem of electrode deformation caused by thermal stress is solved, thereby improving the reliability and tightness of the device.
CN122458833APending Publication Date: 2026-07-24KK TOSHIBA +1
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- KK TOSHIBA
- Filing Date
- 2025-07-21
- Publication Date
- 2026-07-24
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Figure CN122458833A_ABST
Abstract
Embodiments relate to a semiconductor device. According to an embodiment, the semiconductor device is a semiconductor device provided with an element region and a terminal region surrounding the element region, and includes: a semiconductor layer having a first surface and a second surface located on the opposite side of the first surface; a first electrode provided in contact with the first surface; a second electrode provided in contact with the second surface; a first resin member provided on the first surface in the terminal region and covering an end portion of the first electrode; and a second resin member covering the semiconductor layer, the first resin member, and the first electrode, the first resin member having a concavo-convex on the side of the surface located on the opposite side of the first surface.
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