Light-emitting component, preparation method thereof and display substrate

Abstract

The application discloses a light-emitting assembly, a preparation method thereof and a display substrate, and relates to the technical field of display. The light-emitting assembly comprises a substrate, a color conversion unit, a light-emitting unit and a filling layer. The light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer. The light-emitting layer comprises a plurality of light-emitting columns, so that light in the area of a single light-emitting column can be emitted in a direction perpendicular to the substrate as much as possible, and light in the area of a single light-emitting column can also be emitted in the direction perpendicular to the substrate after being emitted to the area of an adjacent light-emitting column. Thus, light emitted by the light-emitting unit can be emitted in the direction perpendicular to the substrate as much as possible, the large-view-angle light emission of the light-emitting unit is reduced, and then the light of light-emitting units of different colors can be prevented from appearing crosstalk, and the light-emitting effect of the light-emitting assembly is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a light-emitting component, its preparation method, and a display substrate. Background Technology

[0002] The display substrate includes a driving backplane and multiple light-emitting components connected to the driving backplane. The driving backplane can provide driving signals to the light-emitting components so that the light-emitting components emit light, thereby realizing the display.

[0003] In related technologies, a light-emitting component includes multiple light-emitting units and a driving unit. Each light-emitting unit is connected to the driving unit, so that the driving unit provides driving signals to the multiple light-emitting units, thereby causing the multiple light-emitting units to emit light under the drive of the driving unit.

[0004] However, crosstalk can easily occur between light emitted from adjacent light-emitting units in a light-emitting component, resulting in poor light emission performance. Summary of the Invention

[0005] This application provides a light-emitting component, its fabrication method, and a display substrate, which can solve the problem of poor light-emitting effect in related technologies. The technical solution is as follows:

[0006] On one hand, a light-emitting component is provided, the light-emitting component comprising:

[0007] Base;

[0008] A color conversion unit located on one side of the substrate; the color conversion unit includes: a light-shielding layer, a limiting dam layer, a light-filtering layer, and an optical functional layer. The light-shielding layer has a light-transmitting hole. The light-filtering layer includes a light-filtering unit corresponding to the light-transmitting hole. The orthographic projection of the light-filtering unit on the substrate overlaps with the orthographic projection of the corresponding light-transmitting hole on the substrate. The limiting dam layer is located on the side of the light-shielding layer away from the substrate. The limiting dam layer has an opening area corresponding to the light-transmitting hole. The orthographic projection of the opening area on the substrate overlaps with the orthographic projection of the corresponding light-transmitting hole on the substrate. The optical functional layer includes a color conversion section located within the opening area. At least a portion of the color conversion section is used to convert the color of light entering the color conversion section.

[0009] A light-emitting unit located on the side of the color conversion unit away from the substrate, the light-emitting unit comprising: a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially in a direction away from the substrate; wherein, the light-emitting layer comprises a plurality of light-emitting pillars arranged in an array and spaced apart, and the orthographic projection of the light-emitting layer on the substrate and the orthographic projection of the optical functional layer on the substrate overlap;

[0010] And a filling layer, wherein the filling layer is located at least between adjacent light-emitting pillars.

[0011] Optionally, the second semiconductor layer includes a plurality of first semiconductor pillars arranged in an array and spaced apart, the plurality of first semiconductor pillars and the plurality of light-emitting pillars being correspondingly arranged, and the orthographic projection of the first semiconductor pillar on the substrate and the orthographic projection of the corresponding light-emitting pillar on the substrate overlapping;

[0012] The filling layer is also located between adjacent first semiconductor pillars in the second semiconductor layer.

[0013] Optionally, the light-emitting unit further includes: a first current spreading layer and a second current spreading layer sequentially stacked on the side of the second semiconductor layer away from the substrate;

[0014] The first current spreading layer includes a plurality of transmission pillars arranged in an array and spaced apart. The plurality of transmission pillars and the plurality of light-emitting pillars are correspondingly arranged, and the orthographic projection of the transmission pillars on the substrate overlaps with the orthographic projection of the corresponding light-emitting pillars on the substrate.

[0015] The filling layer is located between adjacent transmission pillars in the first current spreading layer, and the filling layer exposes the side of the transmission pillar away from the substrate. The second current spreading layer and the side of the transmission pillar away from the substrate are in contact.

[0016] Optionally, the first semiconductor layer includes a plurality of second semiconductor pillars;

[0017] The plurality of second semiconductor pillars and the plurality of light-emitting pillars are correspondingly arranged, and the orthographic projection of the second semiconductor pillar on the substrate and the orthographic projection of the corresponding light-emitting pillar on the substrate overlap;

[0018] The filling layer is also located between adjacent second semiconductor pillars in the first semiconductor layer.

[0019] Optionally, the first semiconductor layer includes a plurality of third semiconductor pillars arranged in an array and spaced apart, the plurality of third semiconductor pillars and the plurality of light-emitting pillars being correspondingly arranged, and the orthographic projection of the third semiconductor pillars on the substrate and the orthographic projection of the corresponding light-emitting pillars on the substrate overlap;

[0020] The filling layer is also located between adjacent third semiconductor pillars in the first semiconductor layer.

[0021] Optionally, the light-emitting component includes: a plurality of light-emitting units;

[0022] In this embodiment, the light-emitting layer of each of the plurality of light-emitting units includes the plurality of light-emitting pillars, and the filling layer includes a plurality of filling portions corresponding to the plurality of light-emitting units, with each filling portion located between adjacent light-emitting pillars in the light-emitting layer of the corresponding light-emitting unit.

[0023] Optionally, the first semiconductor layer of the plurality of light-emitting units is a common film layer, and the first semiconductor layer includes: a common connection portion, a plurality of unit connection portions corresponding to the plurality of light-emitting units, and an auxiliary portion connected to the common connection portion and the plurality of unit connection portions; the light-emitting layer of the light-emitting unit is connected to the corresponding unit connection portion;

[0024] The light-emitting component also includes:

[0025] A common electrode is connected to the common connection portion;

[0026] An insulating layer includes a first via and a plurality of second vias, the first via exposing at least a portion of the common electrode, the plurality of second vias corresponding to the plurality of light-emitting units, and the second vias exposing at least a portion of the corresponding light-emitting unit;

[0027] A first electrode, which is connected to the common electrode via the first via;

[0028] And a plurality of second electrodes, wherein the plurality of second electrodes are disposed corresponding to the plurality of light-emitting units, wherein the second electrode is located on the side of the corresponding light-emitting unit away from the substrate, and is electrically connected to the second semiconductor layer in the corresponding light-emitting unit.

[0029] Optionally, the plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit;

[0030] The first light-emitting unit has a different light-emitting color, the second light-emitting unit has a different light-emitting color, and the third light-emitting unit has a different light-emitting color.

[0031] Optionally, the light-emitting component is a light-emitting chip;

[0032] The light-shielding layer has a plurality of light-transmitting holes, including a first light-transmitting hole, a second light-transmitting hole and a third light-transmitting hole. The first light-transmitting hole is correspondingly disposed to the light-emitting layer of the first light-emitting unit, the second light-transmitting hole is correspondingly disposed to the light-emitting layer of the second light-emitting unit, and the third light-transmitting hole is correspondingly disposed to the light-emitting layer of the third light-emitting unit.

[0033] The color conversion unit includes a plurality of filter units, which include a first filter unit, a second filter unit, and a third filter unit. The orthographic projection of the first filter unit on the substrate overlaps with the orthographic projection of the first light-transmitting aperture on the substrate and is correspondingly disposed with the light-emitting layer of the first light-emitting unit. The orthographic projection of the second filter unit on the substrate overlaps with the orthographic projection of the second light-transmitting aperture on the substrate and is correspondingly disposed with the light-emitting layer of the second light-emitting unit. The orthographic projection of the third filter unit on the substrate overlaps with the orthographic projection of the third light-transmitting aperture on the substrate and is correspondingly disposed with the light-emitting layer of the third light-emitting unit.

[0034] The defined dam layer has a plurality of opening areas, including a first opening area, a second opening area, and a third opening area. The orthographic projection of the first opening area on the substrate overlaps with the orthographic projection of the first light-transmitting hole on the substrate and is correspondingly disposed with the light-emitting layer of the first light-emitting unit. The orthographic projection of the second opening area on the substrate overlaps with the orthographic projection of the second light-transmitting hole on the substrate and is correspondingly disposed with the light-emitting layer of the second light-emitting unit. The orthographic projection of the third opening area on the substrate overlaps with the orthographic projection of the third light-transmitting hole on the substrate and is correspondingly disposed with the light-emitting layer of the third light-emitting unit.

[0035] The color conversion unit includes multiple optical functional layers, each including a first color conversion unit, a second color conversion unit, and a third color conversion unit. The first color conversion unit is disposed within the first opening area, the second color conversion unit is disposed within the second opening area, and the third color conversion unit is disposed within the third opening area.

[0036] Optionally, the light-emitting component includes multiple pillar groups, and each pillar group includes at least the light-emitting pillar;

[0037] The side length of the orthographic projection of the column group on the substrate ranges from 0.3 micrometers to 1 micrometer, the interval between the orthographic projections of two adjacent column groups on the substrate ranges from 0.3 micrometers to 1 micrometer, and the height of the column group ranges from 0.3 micrometers to 1.5 micrometers.

[0038] Optionally, the first semiconductor layer comprises N-type doped gallium nitride, the second semiconductor layer comprises P-type doped gallium nitride, and the light-emitting layer comprises a multi-quantum-well layer.

[0039] On the other hand, a method for fabricating a light-emitting component is provided, the method comprising:

[0040] A first target structure is obtained, comprising: an initial substrate, and a color conversion unit located on one side of the initial substrate; the color conversion unit comprises: a light-shielding layer, a limiting dam layer, a filter layer, and an optical functional layer; the light-shielding layer has a light-transmitting aperture; the filter layer includes a filter unit corresponding to the light-transmitting aperture; the orthographic projection of the filter unit on the initial substrate overlaps with the orthographic projection of the corresponding light-transmitting aperture on the substrate; the limiting dam layer is located on the side of the light-shielding layer away from the substrate; the limiting dam layer has an opening area corresponding to the light-transmitting aperture; the orthographic projection of the opening area on the initial substrate overlaps with the orthographic projection of the corresponding light-transmitting aperture on the initial substrate; the optical functional layer is located within the opening area; at least a portion of the optical functional layer is used to convert the color of light entering the optical functional layer.

[0041] A second target structure is obtained, the second target structure including a first temporary substrate, and a light-emitting unit and a filling layer located on one side of the first temporary substrate. The light-emitting unit includes: a second semiconductor layer, a light-emitting layer and a first semiconductor layer stacked sequentially in a direction away from the first temporary substrate; wherein, the light-emitting layer includes a plurality of light-emitting pillars arranged in an array and spaced apart; the filling layer is located at least between adjacent light-emitting pillars.

[0042] The first target structure and the second target structure are bonded together such that the first semiconductor layer, the light-emitting layer, and the second semiconductor layer are stacked sequentially in a direction away from the initial substrate, and the orthographic projection of the light-emitting layer on the initial substrate and the orthographic projection of the optical functional layer on the initial substrate overlap.

[0043] Remove the first temporary substrate.

[0044] Optionally, obtaining the second target structure includes:

[0045] A second temporary substrate is obtained, and a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a second current spreading layer, and a filling layer are located on one side of the second temporary substrate; the first semiconductor layer, the light-emitting layer, the second semiconductor layer, the first current spreading layer, and the second current spreading layer are stacked in a direction away from the second temporary substrate; the filling layer is also located between adjacent first semiconductor pillars in the second semiconductor layer, between adjacent transport pillars in the first current spreading layer, and between adjacent second semiconductor pillars in the first semiconductor layer;

[0046] A common electrode is formed on the side of the common connection portion of the first semiconductor layer away from the second temporary substrate;

[0047] An insulating layer is formed on the side of the second semiconductor layer and the common electrode away from the second temporary substrate. The insulating layer includes a first via and a second via, the first via exposing at least a portion of the common electrode and the second via exposing at least a portion of the corresponding light-emitting unit.

[0048] A first electrode and a second electrode are formed. The first electrode is connected to the common electrode through the first via, and the second electrode is electrically connected to the second semiconductor layer in the light-emitting unit through the second via.

[0049] A first temporary substrate is formed on the side of the first electrode and the second electrode away from the second temporary substrate, and the second temporary substrate is removed.

[0050] Optionally, obtaining the second temporary substrate, and the first semiconductor layer, light-emitting layer, second semiconductor layer, and filling layer located on one side of the second temporary substrate, includes:

[0051] A first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a first current-transmitting thin film are formed on one side of the second temporary substrate.

[0052] The first current transport film, the second semiconductor film, the light-emitting film, and the first semiconductor film are etched using a masking process to obtain multiple transport pillars of the first current extension layer, multiple first semiconductor pillars of the second semiconductor layer, multiple light-emitting pillars of the light-emitting layer, and multiple second semiconductor pillars of the first semiconductor layer.

[0053] An insulating material is filled in the intervals between adjacent second semiconductor pillars, the intervals between adjacent light-emitting pillars, the intervals between adjacent first semiconductor pillars, and the intervals between adjacent transmission pillars to obtain a filling layer, wherein the filling layer is exposed on the side of the plurality of transmission pillars away from the second temporary substrate.

[0054] A second current spreading layer is formed on the side of the plurality of transmission pillars away from the second temporary substrate and on the side of the filling layer away from the second temporary substrate.

[0055] In another aspect, a display substrate is provided, characterized in that the display substrate includes a driving backplate and a plurality of light-emitting components as described above; the driving backplate is used to carry the light-emitting components and provide driving signals to the light-emitting components.

[0056] The beneficial effects of the technical solution provided in this application include at least the following:

[0057] This application provides a light-emitting component and its fabrication method, as well as a display substrate. The light-emitting component includes a substrate, a color conversion unit, a light-emitting unit, and a filling layer. The light-emitting unit includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting layer includes multiple light-emitting pillars, so that the light emitted from the area of ​​a single light-emitting pillar can be emitted as much as possible along a direction perpendicular to the substrate, and the light from the area of ​​a single light-emitting pillar can also be directed to the areas of adjacent light-emitting pillars before being emitted in a direction perpendicular to the substrate. This allows the light emitted by the light-emitting unit to be emitted as much as possible along a direction perpendicular to the substrate, reducing the wide viewing angle of the light-emitting unit, thereby avoiding crosstalk between light from light-emitting units of different colors and improving the light-emitting effect of the light-emitting component. Attached Figure Description

[0058] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0059] Figure 1 This is a cross-sectional schematic diagram of a light-emitting component provided in an embodiment of this application;

[0060] Figure 2 This is a cross-sectional schematic diagram of another light-emitting component provided in an embodiment of this application;

[0061] Figure 3 This is a cross-sectional schematic diagram of another light-emitting component provided in an embodiment of this application;

[0062] Figure 4 This is a top view of a column assembly and a common electrode provided in an embodiment of this application;

[0063] Figure 5 This is a cross-sectional schematic diagram of another light-emitting component provided in an embodiment of this application;

[0064] Figure 6 This is a top view of another column assembly and common electrode provided in an embodiment of this application;

[0065] Figure 7 This is a top view of a first semiconductor layer provided in an embodiment of this application;

[0066] Figure 8 This is a flowchart illustrating a method for fabricating a light-emitting component according to an embodiment of this application;

[0067] Figure 9 This is a schematic diagram of obtaining a first target structure provided in an embodiment of this application;

[0068] Figure 10 This is a schematic diagram of obtaining a second target structure provided in an embodiment of this application;

[0069] Figure 11 This is a schematic diagram of a first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a first current-diffusing thin film formed on one side of a second temporary substrate, according to an embodiment of this application.

[0070] Figure 12 This is a schematic diagram of a silicon oxide layer formed according to an embodiment of this application;

[0071] Figure 13 This is a schematic diagram of a photoresist formation provided in an embodiment of this application;

[0072] Figure 14 This is a schematic diagram of etching a silicon oxide layer according to an embodiment of this application;

[0073] Figure 15 This is a schematic diagram of etching a first current diffusion film according to an embodiment of this application;

[0074] Figure 16 This is a schematic diagram of etching a second semiconductor thin film, a light-emitting thin film, and a first semiconductor thin film according to an embodiment of this application;

[0075] Figure 17 This is a schematic diagram illustrating the removal of photoresist and silicon oxide layers according to an embodiment of this application;

[0076] Figure 18 This is a schematic diagram of a filling material formation provided in an embodiment of this application;

[0077] Figure 19 This is a schematic diagram of forming a filling layer according to an embodiment of this application;

[0078] Figure 20 This is a schematic diagram of forming a second current spreading layer provided in an embodiment of this application;

[0079] Figure 21 This is a schematic diagram of a sub-light-emitting functional layer provided in an embodiment of this application;

[0080] Figure 22 This is a schematic diagram of etching a first semiconductor layer according to an embodiment of this application;

[0081] Figure 23 This is a schematic diagram of forming a common electrode provided in an embodiment of this application;

[0082] Figure 24 This is a schematic diagram of forming an insulating layer according to an embodiment of this application;

[0083] Figure 25 This is a schematic diagram of forming a first electrode and a second electrode according to an embodiment of this application;

[0084] Figure 26 This is a schematic diagram of forming a first temporary substrate provided in an embodiment of this application;

[0085] Figure 27 This is a schematic diagram illustrating the removal of a second temporary substrate according to an embodiment of this application;

[0086] Figure 28 This is a schematic diagram illustrating the bonding connection of a first target structure and a second target structure according to an embodiment of this application;

[0087] Figure 29 This is a schematic diagram of removing a first temporary substrate provided in an embodiment of this application;

[0088] Figure 30 This is a schematic diagram of the structure of a display substrate provided in an embodiment of this application;

[0089] Figure 31 This is a schematic diagram of another display substrate provided in an embodiment of this application. Detailed Implementation

[0090] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0091] Figure 1 This is a schematic diagram of the structure of a light-emitting component provided in an embodiment of this application. (Reference) Figure 1 The light-emitting component 100 includes: a substrate 101, a color conversion unit 102, a light-emitting unit 103, and a filling layer 104.

[0092] The color conversion unit 102 is located on one side of the substrate 101. The color conversion unit 102 includes: a light-shielding layer 1021, a limiting dam layer 1022, a light-filtering layer 1023, and an optical functional layer 1024. The light-shielding layer 1021 has a light-transmitting aperture K. The light-filtering layer 1023 includes a light-filtering unit 10231 corresponding to the light-transmitting aperture K. The orthographic projection of the light-filtering unit 10231 on the substrate 101 overlaps with the orthographic projection of the corresponding light-transmitting aperture K on the substrate 101. The limiting dam layer 1022 is located on the side of the light-shielding layer 1021 away from the substrate 101. The limiting dam layer 1022 has an opening area Q corresponding to the light-transmitting aperture K. The orthographic projection of the opening area Q on the substrate 101 overlaps with the orthographic projection of the corresponding light-transmitting aperture K on the substrate 101. The optical functional layer 1024 includes a color conversion section 10241, which is located within the opening region Q. At least a portion of the color conversion section 10241 is used to convert the color of light entering the color conversion section 10241.

[0093] The light-emitting unit 103 is located on the side of the color conversion unit 102 away from the substrate 101. The light-emitting unit 103 includes a first semiconductor layer 1031, a light-emitting layer 1032, and a second semiconductor layer 1033, which are sequentially stacked along a direction away from the substrate 101. The light-emitting layer 1032 includes a plurality of light-emitting pillars a1 arranged in an array and spaced apart. The orthographic projection of the light-emitting layer 1032 onto the substrate 101 overlaps with the orthographic projection of the optical functional layer 1024 onto the substrate 101. This allows the light emitted by the light-emitting unit 103 to pass through the optical functional layer 1024 before exiting. A filling layer 104 is located at least between adjacent light-emitting pillars a1.

[0094] Optionally, the light-emitting layer 1032 can be a multi-quantum well (MQW) layer. In this embodiment, since the light-emitting layer 1032 of the light-emitting unit 103 consists of multiple spaced-apart light-emitting pillars a1, the quantum Stark effect (QSCE) of the light-emitting layer 1032 can be reduced. The light emitted from the region of a single light-emitting pillar a1 can be coupled into a vertically oriented guiding mode (i.e., the light can be emitted as much as possible along a direction perpendicular to the substrate 101), or it can be coupled to the region of an adjacent light-emitting pillar a1 and then form a vertically oriented guiding mode again. This allows the light emitted by the light-emitting unit 103 to be emitted as much as possible along a direction perpendicular to the substrate 101, reducing the large viewing angle of the light-emitting unit 103. That is, the light emitted by the light-emitting unit 103 can be narrowed, thereby avoiding crosstalk between light from light-emitting units 103 of different colors and improving the light emission effect of the light-emitting component 100.

[0095] In summary, this application provides a light-emitting component, which includes a substrate, a color conversion unit, a light-emitting unit, and a filling layer. The light-emitting unit includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting layer includes multiple light-emitting pillars, so the light from the area of ​​a single light-emitting pillar can be emitted as much as possible along a direction perpendicular to the substrate, and the light from the area of ​​a single light-emitting pillar can also be directed to the areas of adjacent light-emitting pillars before emitting again in a direction perpendicular to the substrate. This allows the light emitted by the light-emitting unit to be emitted as much as possible along a direction perpendicular to the substrate, reducing the wide-angle light emission of the light-emitting unit, thereby avoiding crosstalk between light from light-emitting units of different colors and improving the light-emitting effect of the light-emitting component.

[0096] In this embodiment, the light-emitting component 100 includes a plurality of pillar groups Z, each pillar group Z including at least one light-emitting pillar a1. When the light-emitting layer 1032 includes a plurality of light-emitting pillars a1, each pillar group Z includes a light-emitting pillar a1.

[0097] refer to Figure 1The second semiconductor layer 1033 includes a plurality of first semiconductor pillars a2 arranged in an array and spaced apart. The plurality of first semiconductor pillars a2 and a plurality of light-emitting pillars a1 are correspondingly arranged, and the orthographic projections of the first semiconductor pillars a2 on the substrate 101 and the corresponding light-emitting pillars a1 on the substrate 101 overlap. A filling layer 104 is also located between adjacent first semiconductor pillars a2 in the second semiconductor layer 1033.

[0098] In the case where the light-emitting layer 1032 includes a plurality of light-emitting pillars a1 and the second semiconductor layer 1033 includes a plurality of first semiconductor pillars a2, each pillar group Z may include a light-emitting pillar a1 and a first semiconductor pillar a2.

[0099] Optionally, the plurality of first semiconductor pillars a2 of the second semiconductor layer 1033 and the plurality of light-emitting pillars a1 of the light-emitting layer 1032 can be formed by a single etching process.

[0100] Optional, see reference Figure 1 The light-emitting unit 103 further includes a first current spreading layer 1034 and a second current spreading layer 1035 sequentially stacked on the side of the second semiconductor layer 1033 away from the substrate 101. Optionally, the first current spreading layer 1034 and the second current spreading layer 1035 are made of indium tin oxide (ITO). By designing the first current spreading layer 1034 and the second current spreading layer 1035, hole transport can be facilitated, thereby improving the electrical performance of the light-emitting component 100.

[0101] refer to Figure 1 The first current extension layer 1034 includes a plurality of diffusion pillars a3 arranged in an array and spaced apart. The plurality of diffusion pillars a3 and a plurality of light-emitting pillars a1 are correspondingly arranged, and the orthographic projections of the diffusion pillars a3 on the substrate 101 and the corresponding light-emitting pillars a1 on the substrate 101 overlap. The filling layer 104 is also located between adjacent diffusion pillars a3 in the first current extension layer 1034.

[0102] In the case where the light-emitting layer 1032 includes a plurality of light-emitting pillars a1, the second semiconductor layer 1033 includes a plurality of first semiconductor pillars a2, and the first current spreading layer 1034 includes a plurality of diffusion pillars a3, each pillar group Z may include a light-emitting pillar a1, a first semiconductor pillar a2, and a diffusion pillar a3.

[0103] Optionally, the plurality of diffusion pillars a3 in the first current spreading layer 1034 can be formed in a single etching process with the plurality of first semiconductor pillars a2 in the second semiconductor layer 1033 and the plurality of light-emitting pillars a1 in the light-emitting layer 1032. After etching, a filling layer 104 is formed, which can expose the side of the diffusion pillars a3 away from the substrate 101, thereby facilitating the contact between the subsequently formed second current spreading layer 1035 and the side of the diffusion pillars a3 away from the substrate 101, so as to realize the signal communication transmitted by the second semiconductor layer 1033 with multiple pillar groups Z.

[0104] refer to Figure 1 The first semiconductor layer 1031 includes a plurality of second semiconductor pillars a4. The plurality of second semiconductor pillars a4 and a plurality of light-emitting pillars a1 are correspondingly disposed, and the orthographic projections of the second semiconductor pillars a4 onto the substrate 101 overlap with the orthographic projections of the corresponding light-emitting pillars a1 onto the substrate 101. A filling layer 104 is also located between adjacent second semiconductor pillars a4 in the first semiconductor layer 1031.

[0105] In the case that the light-emitting layer 1032 includes a plurality of light-emitting pillars a1, the second semiconductor layer 1033 includes a plurality of first semiconductor pillars a2, the first current spreading layer 1034 includes a plurality of diffusion pillars a3, and the first semiconductor layer 1031 includes a plurality of second semiconductor pillars a4, each pillar group Z may include a light-emitting pillar a1, a first semiconductor pillar a2, a diffusion pillar a3, and a second semiconductor pillar a4.

[0106] Optionally, the plurality of second semiconductor pillars a4 in the first semiconductor layer 1031 can be formed in a single etching process with the plurality of first semiconductor pillars a2 in the second semiconductor layer 1033, the plurality of light-emitting pillars a1 in the light-emitting layer 1032, and the plurality of diffusion pillars a3 in the first current spreading layer 1034.

[0107] In the embodiments of this application, reference is made to Figure 2 The first semiconductor layer 1031 includes a plurality of third semiconductor pillars a5 arranged in an array and spaced apart. The plurality of third semiconductor pillars a5 and a plurality of light-emitting pillars a1 are correspondingly arranged, and the orthographic projections of the third semiconductor pillars a5 onto the substrate 101 overlap with the orthographic projections of the corresponding light-emitting pillars a1 onto the substrate 101. A filling layer 104 is also located between adjacent third semiconductor pillars a5 in the first semiconductor layer 1031.

[0108] Optionally, when the light-emitting layer 1032 includes a plurality of light-emitting pillars a1 and the first semiconductor layer 1031 includes a plurality of third semiconductor pillars a5, each pillar group Z may include a light-emitting pillar a1 and a third semiconductor pillar a5.

[0109] Optional, in Figure 2In the light-emitting component shown, the light-emitting unit 103 also includes a third current spreading layer 1036. The material of the third current spreading layer 1036 is indium tin oxide (ITO). By designing the third current spreading layer 1036, hole transport can be facilitated, thereby improving the electrical performance of the light-emitting component 100.

[0110] In the embodiments of this application, Figure 1 The multiple pillar groups Z in the light-emitting component 100 shown can be obtained by etching from the side of the second semiconductor layer 1033 away from the first semiconductor layer 1031 using an etching process. Figure 2 The multiple pillar groups Z in the light-emitting component 100 shown can be obtained by etching from the side of the first semiconductor layer 1031 away from the second semiconductor layer 1033 using an etching process.

[0111] Optionally, the epitaxial wafer used to form the light-emitting component 100 includes: a substrate (sapphire substrate or silicon substrate) and a first semiconductor thin film, a light-emitting thin film, and a second semiconductor thin film sequentially stacked in a direction away from the substrate. The first semiconductor thin film forms the first semiconductor layer 1031 of the light-emitting component, the light-emitting thin film forms the light-emitting layer 1032 of the light-emitting component, and the second semiconductor thin film forms the second semiconductor layer 1033 of the light-emitting component. Figure 1 For the light-emitting component shown, an etching process can be directly used to begin etching from the side of the second semiconductor film away from the first semiconductor film. For Figure 2 For the light-emitting component shown, the first semiconductor film, the light-emitting film and the second semiconductor film in the epitaxial wafer can be transferred to another substrate and the original substrate of the epitaxial wafer can be removed. Then, an etching process can be used to start etching from the side of the first semiconductor film away from the second semiconductor film.

[0112] Optionally, the side length of the orthographic projection of column group Z onto substrate 101 ranges from 0.3 μm to 1 μm. The interval between the orthographic projections of two adjacent column groups Z onto substrate 101 ranges from 0.3 μm to 1 μm. The height of column group Z ranges from 0.3 μm to 1.5 μm, for example, it can be 1 μm.

[0113] In this embodiment, the light-emitting component 100 may include a plurality of light-emitting units 103. Each light-emitting unit 103 has a light-emitting layer 1032 comprising a plurality of light-emitting pillars a1. The filling layer 104 includes a plurality of filling portions 1041 corresponding to the plurality of light-emitting units 103, each filling portion 1041 being located between adjacent light-emitting pillars a1 in the light-emitting layer 1032 of the corresponding light-emitting unit 103.

[0114] Optional, see reference Figure 3The plurality of light-emitting units 103 include a first light-emitting unit 103a, a second light-emitting unit 103b, and a third light-emitting unit 103c. The light-emitting colors of the first light-emitting unit 103a, the second light-emitting unit 103b, and the third light-emitting unit 103c are all different.

[0115] For example, the first light-emitting unit 103a emits red light (red, R), and is a red light-emitting unit 103. The second light-emitting unit 103b emits green light (green, G), and is a green light-emitting unit 103. The third light-emitting unit 103c emits blue light (blue, B). Optionally, the light-emitting component 100 can be an RGB three-in-one light-emitting chip.

[0116] Optionally, the light-emitting layer 1032 and the second semiconductor layer 1033 of each light-emitting unit 103 can be collectively referred to as the sub-light-emitting functional layer of the light-emitting unit 103. Figure 1 In the light-emitting component 100 shown, the second current spreading layer 1035, the first current spreading layer 1034, the light-emitting layer 1032, and the second semiconductor layer 1033 of the light-emitting unit 103 can be collectively referred to as the sub-light-emitting functional layers of the light-emitting unit 103. The sub-light-emitting functional layer of the first light-emitting unit 103a is the first sub-light-emitting functional layer C1, the sub-light-emitting functional layer of the second light-emitting unit 103b is the second sub-light-emitting functional layer C2, and the sub-light-emitting functional layer of the third light-emitting unit 103c is the third sub-light-emitting functional layer C3.

[0117] refer to Figure 1 , Figure 4 and Figure 5 The light-emitting component 100 further includes a common electrode 105. The second sub-light-emitting functional layer C2 of the second light-emitting unit 103b and the third sub-light-emitting functional layer C3 of the third light-emitting unit 103c are arranged along a first direction X1, and the common electrode 105 and the first sub-light-emitting functional layer C1 of the first light-emitting unit 103a are arranged along the first direction X1. The second sub-light-emitting functional layer C2 of the second light-emitting unit 103b and the common electrode 105 are arranged along a second direction X2, and the third sub-light-emitting functional layer C3 of the third light-emitting unit 103c and the first sub-light-emitting functional layer C1 of the first light-emitting unit 103a are arranged along the second direction X2. Figure 1 for Figure 4 Cross-sectional view along the AA' direction. Figure 5 for Figure 4 Cross-sectional view along the BB' direction.

[0118] Or, refer to Figure 3 and Figure 6The first sub-light-emitting functional layer C1 of the first light-emitting unit 103a, the second sub-light-emitting functional layer C2 of the second light-emitting unit 103b, the third sub-light-emitting functional layer C3 of the third light-emitting unit 103c, and the common electrode 105 are arranged in the same direction (e.g., the first direction X1). In this case, the length of the first sub-light-emitting functional layer C1 of the first light-emitting unit 103a, the second sub-light-emitting functional layer C2 of the second light-emitting unit 103b, the third sub-light-emitting functional layer C3 of the third light-emitting unit 103c, and the common electrode 105 along the second direction X2 is greater than the length along the first direction X1. Figure 3 for Figure 6 Cross-sectional view along the CC' direction.

[0119] refer to Figure 4 and Figure 6 The orthographic projection of column group Z onto base 101 can be circular. Alternatively, the orthographic projection of column group Z onto base 101 can be other shapes, such as rectangles or other regular polygons. This application does not limit the shape of the orthographic projection of column group Z onto base 101.

[0120] In the embodiments of this application, if the light-emitting component 100 includes a plurality of light-emitting units 103, the first semiconductor layer 1031 of the plurality of light-emitting units 103 can be a common film layer. Figure 7 This is a top view of a first semiconductor layer 1031 provided in an embodiment of this application. (See reference) Figure 7 The first semiconductor layer 1031 includes: a common connection portion 10311, multiple unit connection portions 10312 corresponding to multiple light-emitting units 103, and an auxiliary portion 10313 connected to the common connection portion 10311 and the multiple unit connection portions 10312. The light-emitting layer 1032 of the light-emitting unit 103 is connected to the corresponding unit connection portion 10312.

[0121] Optional, see reference Figure 7 The first semiconductor layer 1031 may include a first unit connection portion 10312a corresponding to the first light-emitting unit 103a, a second unit connection portion 10312b corresponding to the second light-emitting unit 103b, and a third unit connection portion 10312c corresponding to the third light-emitting unit 103c. The light-emitting layer 1032 of the first light-emitting unit 103a is connected to the first unit connection portion 10312a, the light-emitting layer 1032 of the second light-emitting unit 103b is connected to the second unit connection portion 10312b, and the light-emitting layer 1032 of the third light-emitting unit 103c is connected to the third unit connection portion 10312c.

[0122] by Figure 1 Taking the light-emitting component shown as an example, refer to Figure 7The auxiliary portion 10313 in the first semiconductor layer 1031 may include: a first auxiliary portion 103131 and a second auxiliary portion 103132.

[0123] A portion of the first auxiliary part 103131 may be located between adjacent unit connecting parts 10312, and another portion may be located between the first auxiliary part 103131 and the unit connecting part 10312.

[0124] The second auxiliary part 103132 may be arranged around the first auxiliary part 103131, the common connection part 10311 and the multiple unit connection parts 10312.

[0125] Therefore, the first auxiliary part 103131, the second auxiliary part 103132, the common connection part 10311 and the multiple unit connection parts 10312 in the first semiconductor layer 1031 can form a planar structure with the whole layer.

[0126] Optionally, the material of the second semiconductor layer 1033 in each light-emitting unit 103 may include p-type doped gallium nitride (P-GaN). In this embodiment, the first semiconductor layer 1031 may include a first sub-layer and a second sub-layer stacked along a direction perpendicular to and toward the substrate 101. That is, the second sub-layer is closer to the substrate 101 than the first sub-layer. It is understood that the first semiconductor layer 1031 can be divided into an auxiliary portion 10313, a common connection portion 10311, and a plurality of unit connection portions 10312 in a direction parallel to the extension surface of the substrate 101, and the first semiconductor layer 1031 can be divided into a first sub-layer and a second sub-layer in a direction perpendicular to the extension surface of the substrate 101.

[0127] In this design, the first sub-layer of the first semiconductor layer 1031 can be located between the second sub-layer and the light-emitting layer 1032 of each light-emitting unit 103. That is, the first sub-layer is closer to the light-emitting layer 1032 of the light-emitting unit 103 than the second sub-layer. Here, the material of the first sub-layer of the first semiconductor layer 1031 can be N-type doped gallium nitride (N-GaN), and the second sub-layer of the first semiconductor layer 1031 can be a gallium nitride buffer layer (buffer GaN). Of course, the first semiconductor layer 1031 can also include only the first sub-layer and not the second sub-layer.

[0128] In this embodiment, the common electrode 105 can be connected to the common connection portion 10311 of the first semiconductor layer 1031. For example, the common electrode 105 can be located on the side of the common electrode 105 away from the substrate 101, and the orthographic projection of the common electrode 105 on the substrate 101 can overlap with the orthographic projection of the common connection portion 10311 on the substrate 101, so that the common electrode 105 and the common connection portion 10311 are connected. For example, the outer boundary of the orthographic projection of the common connection portion 10311 on the substrate 101 coincides with the outer boundary of the orthographic projection of the common electrode 105 on the substrate 101.

[0129] In the embodiments of this application, reference is made to Figures 1 to 3 as well as Figure 5 The light-emitting component 100 further includes an insulating layer 106. The insulating layer 106 is located on the side of the light-emitting layer 1032 and the common electrode 105 away from the substrate 101. The insulating layer 106 includes a first via V1 and a plurality of second vias V2. The first via V1 exposes at least a portion of the common electrode 105, and the plurality of second vias V2 correspond to a plurality of light-emitting units 103, with each second via V2 exposing at least a portion of its corresponding light-emitting unit 103. For example, Figure 1 The second via V2 exposes at least a portion of the second current extension layer 1035 of the corresponding light-emitting unit 103. Figure 2 The second via V2 exposes at least a portion of the third current extension layer 1036 of the corresponding light-emitting unit 103.

[0130] The light-emitting component 100 further includes a first electrode 107 and a plurality of second electrodes 108. The first electrode 107 is connected to a common electrode 105 through a first via V1. The plurality of second electrodes 108 are correspondingly disposed with a plurality of light-emitting units 103, and the second electrodes 108 are located on the side of the corresponding light-emitting unit 103 away from the substrate 101, and are electrically connected to the second semiconductor layer 1033 in the corresponding light-emitting unit 103.

[0131] In this case, in the light-emitting unit 103, after the first electrode 107 is loaded with a cathode signal, if the second electrode 108 in the light-emitting unit 103 is loaded with an anode signal, then the light-emitting layer 1032 in this light-emitting unit 103 can emit the first light.

[0132] Optionally, the first electrode 107 can be disposed in the same layer as each of the second electrodes 108 and made of the same material. That is, the first electrode 107 and each of the second electrodes 108 are formed using the same patterning process.

[0133] In this embodiment, the side of the common electrode 105 facing away from the first semiconductor layer 1031 can be flush with the side of the light-emitting unit 103 facing away from the first semiconductor layer 1031. For example, the thickness of the common electrode 105 can be equal to the sum of the thicknesses of the second current spreading layer 1035, the first current spreading layer 1034, the second semiconductor layer 1033, and the light-emitting layer 1032. Thus, the sides of the second electrode 108 and the first electrode 107 facing away from the substrate 101 are also flush. Since the second electrode 108 and the first electrode 107 in the light-emitting unit 103 need to be soldered to the driving backplate when the light-emitting component 100 is subsequently connected to the driving backplate, when the sides of the second electrode 108 and the first electrode 107 facing away from the substrate 101 are flush, it can be ensured that the light-emitting unit 103 can be stably fixed on the driving backplate.

[0134] In this embodiment of the application, if the light-emitting component 100 includes a first light-emitting unit 103a, a second light-emitting unit 103b, and a third light-emitting unit 103c, then refer to... Figure 1 , Figure 3 as well as Figure 5 The light-shielding layer 1021 has multiple light-transmitting holes K. These holes K include a first light-transmitting hole K1, a second light-transmitting hole K2, and a third light-transmitting hole K3. The first light-transmitting hole K1 corresponds to the light-emitting layer 1032 of the first light-emitting unit 103a, the second light-transmitting hole K2 corresponds to the light-emitting layer 1032 of the second light-emitting unit 103b, and the third light-transmitting hole K3 corresponds to the light-emitting layer 1032 of the third light-emitting unit 103c.

[0135] Optionally, the orthographic projection of each light-transmitting hole K on the substrate 101 can overlap with the orthographic projection of the light-emitting layer 1032 of the corresponding light-emitting unit 103 on the substrate 101. For example, the orthographic projection of the light-emitting layer 1032 of the light-emitting unit 103 on the substrate 101 can be located within the orthographic projection of the corresponding light-transmitting hole K on the substrate 101.

[0136] Optionally, the orthographic projection of the first light-transmitting aperture K1 on the substrate 101 may overlap with the orthographic projection of the light-emitting layer 1032 of the first light-emitting unit 103a on the substrate 101. For example, the orthographic projection of the light-emitting layer 1032 of the first light-emitting unit 103a on the substrate 101 is located within the orthographic projection of the first light-transmitting aperture K1 on the substrate 101.

[0137] The orthographic projection of the second light-transmitting aperture K2 on the substrate 101 can overlap with the orthographic projection of the light-emitting layer 1032 of the second light-emitting unit 103b on the substrate 101. For example, the orthographic projection of the light-emitting layer 1032 of the second light-emitting unit 103b on the substrate 101 is located within the orthographic projection of the second light-transmitting aperture K2 on the substrate 101.

[0138] The orthographic projection of the third light-transmitting aperture K3 on the substrate 101 can overlap with the orthographic projection of the light-emitting layer 1032 of the third light-emitting unit 103c on the substrate 101. For example, the orthographic projection of the light-emitting layer 1032 of the third light-emitting unit 103c on the substrate 101 is located within the orthographic projection of the third light-transmitting aperture K3 on the substrate 101.

[0139] The limiting dam layer 1022 in the color conversion unit 102 can be located on the side of the light-shielding layer 1021 facing away from the substrate 101. This limiting dam layer 1022 can have multiple opening regions Q corresponding one-to-one with the multiple light-transmitting holes K, and these opening regions Q can also correspond one-to-one with the light-emitting layers 1032 of the multiple light-emitting units 103. Here, the orthographic projection of each opening region Q in the limiting dam layer 1022 onto the substrate 101 can overlap with the orthographic projection of the corresponding light-transmitting hole K onto the substrate 101, and can also overlap with the orthographic projection of the light-emitting layer 1032 of the corresponding light-emitting unit 103 onto the substrate 101. For example, the light-emitting side of the light-emitting layer 1032 in the light-emitting unit 103 can all face the corresponding opening region Q, and the orthographic projection of the light-emitting layer 1032 of each light-emitting unit 103 onto the substrate 101 can be located within the orthographic projection of the corresponding opening region Q onto the substrate 101. The orthographic projection of each opening region Q in the defined dam layer 1022 onto the base 101 can lie within the orthographic projection of the corresponding light-transmitting aperture K onto the base 101.

[0140] The multiple opening regions Q in the defined dam layer 1022 may include: a first opening region Q1, a second opening region Q2, and a third opening region Q3. Specifically, the first opening region Q1 may be disposed opposite to the light-emitting layer 1032 of the first light-emitting unit 103a, the second opening region Q2 may be disposed opposite to the light-emitting layer 1032 of the second light-emitting unit 103b, and the third opening region Q3 may be disposed opposite to the light-emitting layer 1032 of the third light-emitting unit 103c.

[0141] Optionally, the area enclosed by the outer contour of the dam layer 1022 is rectangular, and the shapes of the first opening area Q1, the second opening area Q2 and the third opening area Q3 are all rectangular.

[0142] The optical functional layer 1024 in the color conversion unit 102 includes a plurality of color conversion units 10241. The plurality of color conversion units 10241 may include: a first color conversion unit 10241a, a second color conversion unit 10241b, and a third color conversion unit 10241c. The first color conversion unit 10241a may be located within a first opening region Q1, the second color conversion unit 10241b may be located within a second opening region Q2, and the third color conversion unit 10241c may be located within a third opening region Q3.

[0143] In this configuration, the first light emitted from the light-emitting layer 1032 of the first light-emitting unit 103a can be directed to the first color conversion unit 10241a, where it converts the first light emitted from the light-emitting layer 1032 into light of another color. Similarly, the first light emitted from the light-emitting layer 1032 of the second light-emitting unit 103b can be directed to the second color conversion unit 10241b, where it converts the first light emitted from the light-emitting layer 1032 into light of yet another color. Likewise, the first light emitted from the light-emitting layer 1032 of the third light-emitting unit 103c can be directed to the third color conversion unit 10241c, where it can either pass through or be converted by the third color conversion unit 10241c.

[0144] For example, the light-emitting component 100 may have a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. The first light emitted by the light-emitting layer 1032 of the first light-emitting unit 103a, the light-emitting layer 1032 of the second light-emitting unit 103b, and the light-emitting layer 1032 of the third light-emitting unit 103c all include at least one of blue light and ultraviolet light.

[0145] The first color conversion unit 10241a is used to convert the first light beam into red light. For example, the first color conversion unit 10241a includes red quantum dots that convert the first light beam into red light; preferably, the first color conversion unit 10241a also includes scattering particles for scattering the light. When the first light beam emitted from the light-emitting layer 1032 of the first light-emitting unit 103a strikes the first color conversion unit 10241a distributed within the first opening region Q1, the red quantum dots convert the first light beam into red light, and the scattering particles scatter both the first light beam and the red light, ensuring that more of the first light beam can be converted into red light by the red quantum dots and that the converted red light has a large emission angle, thus ensuring a large viewing angle for the display substrate integrating the light-emitting component 100. Therefore, the red sub-pixel R in the light-emitting component 100 may include: the first light-emitting unit 103a and the first color conversion unit 10241a.

[0146] The second color conversion unit 10241b is used to convert the first light into green light. For example, the second color conversion unit 10241b includes green quantum dots that convert the first light into green light; preferably, the second color conversion unit 10241b also includes scattering particles for scattering light. Here, the first light emitted from the light-emitting layer 1032 of the second light-emitting unit 103b, after striking the second color conversion unit 10241b distributed within the second opening region Q2, is converted into green light by the green quantum dots, and the scattering particles scatter both the first light and the green light, ensuring that more of the first light can be converted into green light by the green quantum dots, and ensuring that the converted green light has a large emission angle, thus ensuring a large viewing angle for the display substrate integrating the light-emitting component 100. Therefore, the green sub-pixel G in the light-emitting component 100 may include: the second light-emitting unit 103b and the second color conversion unit 10241b.

[0147] The third color conversion unit 10241c is used to convert the first light into blue light or maintain blue light emission. For example, when the first light only contains blue light, the third color conversion unit 10241c can be a transparent part or can include blue quantum dots; wherein, the transparent part is used for direct transmission of the first light, and the blue quantum dots can be used to convert the first light into blue light with a wavelength different from that of the first light. Preferably, the third color conversion unit 10241c also includes scattering particles that scatter light. Here, the first light emitted from the light-emitting layer 1032 of the third light-emitting unit 103c, after being incident on the third color conversion unit 10241c distributed in the third opening region Q3, can be scattered by the scattering particles to ensure a large emission angle of blue light, thereby ensuring a large viewing angle of the display substrate with integrated light-emitting components. For example, when the first light ray contains ultraviolet light, the third color conversion unit 10241c includes blue quantum dots that convert the first light ray into blue light, or the third color conversion unit 10241c simultaneously contains scattering particles for scattering light and blue quantum dots for converting ultraviolet light into blue light. Here, after the first light ray emitted from the light-emitting layer 1032 of the third light-emitting unit 103c is directed towards the third color conversion unit 10241c distributed in the third opening region Q3, the blue quantum dots can convert the ultraviolet light in the first light ray into blue light, and the scattering particles can scatter both the first light ray and the blue light, ensuring that more ultraviolet light is converted into blue light by the blue quantum dots, and ensuring that the emitted angle of the converted blue light is large, so as to ensure that the display substrate integrating the light-emitting component 100 has a large viewing angle. Therefore, the blue sub-pixel B in the light-emitting component 100 may include: the third light-emitting unit 103c and the third color conversion unit 10241c.

[0148] In this embodiment, the color conversion unit 102 includes a plurality of filter units 10231. The plurality of filter units 10231 include: a first filter unit 10231a, a second filter unit 10231b, and a third filter unit 10231c. The orthographic projection of the first filter unit 10231a onto the substrate 101 overlaps with the orthographic projection of the first light-transmitting aperture K1 onto the substrate 101, and is correspondingly disposed with the light-emitting layer 1032 of the first light-emitting unit 103a. The orthographic projection of the second filter unit 10231b onto the substrate 101 overlaps with the orthographic projection of the second light-transmitting aperture K2 onto the substrate 101, and is correspondingly disposed with the light-emitting layer 1032 of the second light-emitting unit 103b. The orthographic projection of the third filter unit 10231c onto the substrate 101 overlaps with the orthographic projection of the third light-transmitting aperture K3 onto the substrate 101, and is correspondingly disposed with the light-emitting layer 1032 of the third light-emitting unit 103c.

[0149] Optionally, the first light emitted by the light-emitting layer 1032 of the first light-emitting unit 103a, the light-emitting layer 1032 of the second light-emitting unit 103b, and the light-emitting layer 1032 of the third light-emitting unit 103c is all blue light. The first filter unit 10231a can be a red color resist, which can transmit red light and absorb light of other colors. In this way, the light emitted from the first color conversion unit 10241a can pass through the first filter unit 10231a before being emitted, and the first filter unit 10231a can filter out light of colors other than red light, so as to ensure that the red sub-pixel R in the light-emitting component can filter out the blue light component. It should be noted that, in other possible implementations, the first filter unit 10231a can also be a film layer for transmitting red light and reflecting blue light. In this way, after the light emitted from the first color conversion unit 10241a is directed to the first filter unit 10231a, the red light in these rays can pass through the first filter unit 10231a and be emitted again, while the blue light in these rays can be reflected back to the first color conversion unit 10241a by the first filter unit 10231a. This allows the red quantum dots in the first color conversion unit 10241a to excite the blue light into red light, thereby further improving the excitation efficiency of the red quantum dots.

[0150] For example, the first light emitted by the light-emitting layer 1032 of the first light-emitting unit 103a, the light-emitting layer 1032 of the second light-emitting unit 103b, and the light-emitting layer 1032 of the third light-emitting unit 103c is all blue light. The second filter unit 10231b can be a green color block, which can transmit green light and absorb light of other colors. In this way, the light emitted from the second color conversion unit 10241b can pass through the second filter unit 10231b before being emitted, and the second filter unit 10231b can filter out light of other colors except green light, so as to ensure that the green sub-pixel G in the light-emitting component can filter out the blue light component. It should be noted that, in other possible implementations, the second filter unit 10231b can also be a film layer that transmits green light and reflects blue light. In this way, after the light emitted from the second color conversion unit 10241b is directed to the second filter unit 10231b, the green light in these rays can pass through the second filter unit 10231b and then be emitted again, while the blue light in these rays can be reflected back to the second color conversion unit 10241b by the second filter unit 10231b. This allows the green quantum dots in the second color conversion unit 10241b to excite the blue light back into green light, thereby further improving the excitation efficiency of the green quantum dots.

[0151] It should be noted that the film structure of the first filter unit 10231a and the second filter unit 10231b can be the same and can be prepared by the same process; for example, both the first filter unit 10231a and the second filter unit 10231b are films that transmit red and green light and reflect blue light.

[0152] For example, the first light emitted by the light-emitting layer 1032 of the first light-emitting unit 103a, the light-emitting layer 1032 of the second light-emitting unit 103b, and the light-emitting layer 1032 of the third light-emitting unit 103c is all blue light. The third filter unit 10231c can be a blue color block that can transmit blue light and absorb other colors of light. In this way, the light emitted from the third color conversion unit 10241c can pass through the third filter unit 10231c before being emitted, and the third filter unit 10231c can filter out light of other colors except blue light, so as to ensure that the blue sub-pixel B in the light-emitting component can emit relatively pure blue light.

[0153] For example, the first light emitted by the light-emitting layer 1032 of the first light-emitting unit 103a, the light-emitting layer 1032 of the second light-emitting unit 103b, and the light-emitting layer 1032 of the third light-emitting unit 103c is blue light. The third filter unit 10231c can be a transparent block that can transmit blue light.

[0154] It should be noted that since the orthographic projection of each filter unit 10231 in the filter layer 1023 onto the substrate 101 overlaps with the orthographic projection of the corresponding light-transmitting aperture K in the light-shielding layer 1021 onto the substrate 101, a portion of the light-shielding layer 1021 will be distributed between two adjacent filter units 10231 in the filter layer 1023 in the direction parallel to the extension surface of the substrate 101. In this way, light emitted from the side of a filter unit 10231 in the filter layer 1023 can be absorbed by the light-shielding layer 1021, thereby ensuring that the light intensity emitted by each sub-pixel towards adjacent sub-pixels is low, effectively reducing the probability of color crosstalk in the light-emitting component.

[0155] Further reference Figures 1 to 3 as well as Figure 5 The color conversion unit 102 includes an encapsulation layer 1025, which can be located on the side of the limiting dam layer 1022 facing away from the substrate 101. The encapsulation layer 1025 can encapsulate the limiting dam layer 1022, the optical functional layer 1024, and the filter layer 1023 to prevent water and oxygen in the external environment from penetrating the limiting dam layer 1022 and eroding the optical functional layer 1024 or the filter layer 1023. This ensures that the optical functional layer 1024 can stably convert the color of light, resulting in high reliability of the optical functional layer 1024.

[0156] In this embodiment, the light-emitting unit 103 and the color conversion unit 102 in the light-emitting component 100 can be bonded together by a connecting layer 109. That is, a connecting layer 109 for bonding the two together is distributed between the light-emitting unit 103 and the color conversion unit 102.

[0157] In summary, this application provides a light-emitting component, which includes a substrate, a color conversion unit, a light-emitting unit, and a filling layer. The light-emitting unit includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting layer includes multiple light-emitting pillars, so the light from the area of ​​a single light-emitting pillar can be emitted as much as possible along a direction perpendicular to the substrate, and the light from the area of ​​a single light-emitting pillar can also be directed to the areas of adjacent light-emitting pillars before emitting again in a direction perpendicular to the substrate. This allows the light emitted by the light-emitting unit to be emitted as much as possible along a direction perpendicular to the substrate, reducing the wide-angle light emission of the light-emitting unit, thereby avoiding crosstalk between light from light-emitting units of different colors and improving the light-emitting effect of the light-emitting component.

[0158] Figure 8 This is a flowchart illustrating a method for fabricating a light-emitting component according to an embodiment of this application. (Reference) Figure 8 The method includes:

[0159] Step S101: Obtain the first target structure.

[0160] In this embodiment, the first target structure includes an initial substrate 101a and a color conversion unit 102 located on one side of the initial substrate 101a. The color conversion unit 102 includes a light-shielding layer 1021, a limiting dam layer 1022, a light-filtering layer 1023, and an optical functional layer 1024. The light-shielding layer 1021 has a light-transmitting aperture K, and the light-filtering layer 1023 includes a light-filtering unit 10231 corresponding to the light-transmitting aperture K. The orthographic projection of the light-filtering unit 10231 on the initial substrate 101a overlaps with the orthographic projection of the corresponding light-transmitting aperture K on the initial substrate 101a. The limiting dam layer 1022 is located on the side of the light-shielding layer 1021 away from the initial substrate 101a, and the limiting dam layer 1022 has an opening region Q corresponding to the light-transmitting aperture K. The orthographic projection of the opening region Q on the initial substrate 101a overlaps with the orthographic projection of the corresponding light-transmitting aperture K on the initial substrate 101a. The optical functional layer 1024 is located within the opening region Q, and at least a portion of the optical functional layer 1024 is used to convert the color of light entering the optical functional layer 1024.

[0161] refer to Figure 9 The process of obtaining the first target structure includes: forming a light-shielding layer (black BM layer) 1021 on an initial substrate 101a; forming a filter unit in a filter layer 1024 within the light-passing hole K of the light-shielding layer 1021; forming a limiting dam layer 1022 on the side of the light-shielding layer 1021 away from the initial substrate 101a; forming a color conversion section in an optical functional layer 1024 within the opening region Q of the limiting dam layer 1022 using printing or exposure development; and forming an encapsulation layer 1025 on the side of the limiting dam layer 1022 away from the initial substrate 101a using plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD). Optionally, the material of the encapsulation layer 1025 can be silicon oxide (SiO) or silicon nitride (SiN).

[0162] Step S102: Obtain the second target structure.

[0163] In the embodiments of this application, reference is made to Figure 10 ,by Figure 1 Taking the light-emitting component shown as an example, the process of obtaining the second target structure includes:

[0164] Step S1021: A first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a first current-diffusing thin film are formed on one side of the second temporary substrate.

[0165] Among them, reference Figure 11A first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a first current-diffusing thin film are stacked along a direction away from a second temporary substrate. The second temporary substrate is a sapphire substrate or a silicon-based substrate. The material of the first semiconductor thin film may include N-type doped gallium nitride, the material of the light-emitting thin film may include multiple quantum wells, and the material of the second semiconductor thin film may include P-type doped gallium nitride. The material of the first current-diffusing thin film may include indium tin oxide (ITO).

[0166] Step S1022: The first current diffusion film, the second semiconductor film, the light-emitting film and the first semiconductor film are etched using a mask process to obtain multiple diffusion pillars of the first current expansion layer, multiple first semiconductor pillars of the second semiconductor layer, multiple light-emitting pillars of the light-emitting layer, and multiple second semiconductor layers of the first semiconductor layer.

[0167] (1)Reference Figure 12 Silicon oxide can be deposited as a hard mask using methods such as plasma-enhanced chemical vapor deposition (PECVD) to facilitate subsequent etching. The thickness of the silicon oxide layer can range from 100 nm to 400 nm.

[0168] (2)Reference Figure 13 Patterned photoresist can be formed through exposure and development (high-precision exposure machine, size greater than or equal to 500nm) or nanoimprinting (smaller size, greater than or equal to 100nm).

[0169] (3)Reference Figure 14 The silicon oxide layer is etched using a fluorine (F)-based gas to ensure that the silicon oxide layer is completely etched away. The F-based gas can be carbon tetrafluoride (CF4), sulfur hexafluoride (SF6), or trifluoromethane (CHF3).

[0170] (4)Reference Figure 15 The first current diffusion film was etched using chlorine (Cl2), boron trichloride (BCl3), or argon (Ar) to obtain multiple diffusion pillars. The thickness of the first current diffusion film was approximately 120 nm.

[0171] (5)Reference Figure 16 The etching process involves sequentially etching through the second semiconductor thin film and the light-emitting thin film using gases such as Cl2 or BCl3, until the first semiconductor thin film is etched, thereby obtaining multiple first semiconductor pillars a2, multiple light-emitting pillars a1, and multiple second semiconductor pillars a4. The total etching depth can range from 0.3 μm to 1.5 μm, that is, the height of the pillar group ranges from 0.3 μm to 1.5 μm.

[0172] (6)Reference Figure 17After removing the adhesive and silicon oxide layer, clean the area to remove any remaining nano-imprint adhesive.

[0173] (7) Defect repair.

[0174] Sidewall damage caused by etching can be repaired through high-temperature annealing, wet etching, or sidewall passivation. High-temperature annealing, performed only in an atmosphere such as nitrogen (N2) or ammonia (NH3) at a specific temperature (500℃ to 900℃), reduces internal dislocations and promotes local element diffusion and recombination, thus reducing internal defects. Wet etching involves reacting the sidewalls with alkaline solutions (potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH)) or acidic solutions (phosphoric acid (H3PO4)) to reduce surface dangling bonds and oxide content, thereby minimizing defects. Alternatively, neutral solutions such as ammonium sulfide can be used to displace the surface and reduce defect content. Sidewall passivation involves protecting the sidewalls with materials such as silicon oxide (SiO), silicon nitride (SiN), or aluminum oxide (Al2O3). Silicon oxide can be formed using atomic layer deposition (ALD) or PECVD, or it can be formed by curing organic passivating adhesives to create a silicon oxide passivation layer.

[0175] Step S1023: Fill the spaces between adjacent second semiconductor pillars, adjacent light-emitting pillars, adjacent first semiconductor pillars, and adjacent transmission pillars with insulating material to obtain a filling layer.

[0176] refer to Figure 18 The Z-slots of the pillar assembly are filled with a filler material (such as SOG adhesive) by spin coating. After curing, the SOG forms a polymeric, silicon oxide-like material. This serves two purposes: first, it provides dielectric insulation, preventing short circuits caused by overlap during subsequent deposition of the common electrode 105; second, it forms a coating on the surface of the pillar assembly, acting as a sidewall passivation layer and reducing surface defects after etching.

[0177] refer to Figure 19 The filling material is etched over its entire surface to obtain a filling layer 104. The filling layer 104 exposes the side of the plurality of diffusion pillars a3 away from the second temporary substrate.

[0178] Step S1024: A second current spreading layer is formed on the side of the plurality of transmission pillars away from the second temporary substrate and on the side of the filling layer away from the second temporary substrate.

[0179] refer to Figure 20 An indium tin oxide (ITO) layer is deposited across the entire surface as the second current spreading layer 1035 for the common anode. To ensure good current spreading performance, the thickness of the second current spreading layer 1035 can be greater than 100 nm.

[0180] Step S1025: Etch the second current spreading layer, the first current spreading layer, the second semiconductor layer and the light-emitting layer to form a common connection portion of the first semiconductor layer.

[0181] refer to Figure 21 After etching, multiple light-emitting units 103 can be obtained as sub-light-emitting functional layers (second current extension layer 1035, first current extension layer 1034, second semiconductor layer 1033, and light-emitting layer 1032). Simultaneously, a common connection portion 10311 can be formed by etching (over-etching) a portion of the first semiconductor layer 1031. Then, refer to... Figure 22 It can perform deep etching on the first semiconductor layer 1031, with an etching depth of 4μm to 5μm, to separate the light-emitting chips and etch them onto the second temporary substrate.

[0182] Step S1026: A common electrode is formed on the side of the common connection portion of the first semiconductor layer away from the second temporary substrate.

[0183] refer to Figure 23 The common electrode 105 can be formed using E-beam electron beam evaporation. The material of the common electrode 105 can include titanium (Ti), aluminum (Al), nickel (Ni), and gold (Au), with thicknesses of 30 nm, 175 nm, 35 nm, and 1000 nm, respectively. Alternatively, the material of the common electrode 105 can include chromium (Cr), platinum (Pt), and gold (Au), with thicknesses of 20 nm, 20 nm, and 1000 nm, respectively.

[0184] Step S1027: Form an insulating layer.

[0185] refer to Figure 24 An insulating layer 106 is deposited using a PECVD process, with a thickness ranging from 600 nm to 700 nm. The material of the insulating layer 106 can be silicon oxide (SiO) or silicon oxynitride (SiON), etc. Optionally, the material of the insulating layer 106 can be silicon oxide (SiO).

[0186] The insulating layer 106 is located on the side of the second semiconductor layer 1033 and the common electrode 105 away from the second temporary substrate. The insulating layer 106 includes a first via V1 and a second via V2. The first via V1 exposes at least a portion of the common electrode 105, and the second via V2 exposes at least a portion of the sub-light-emitting functional layer of the corresponding light-emitting unit 103, such as exposing at least a portion of the second current spreading layer 1035.

[0187] Step S1028: Form the first electrode and the second electrode.

[0188] refer to Figure 25The first electrode 107 can be connected to the common electrode 105 through the first via V1, and the second electrode 108 can be connected to the sub-light-emitting functional layer in the light-emitting unit 103 through the second via V2, for example, to the second current extension layer 1035.

[0189] The materials of the first electrode 107 and the second electrode 108 may include titanium (Ti), aluminum (Al), nickel (Ni), and gold (Au), or may include chromium (Cr), platinum (Pt), and gold (Au). The thickness of the first electrode 107 and the second electrode 108 is approximately 1.5 μm.

[0190] Step S1029: Form a first temporary substrate on the side of the first electrode and the second electrode away from the second temporary substrate, and remove the second temporary substrate.

[0191] In this embodiment, the first temporary substrate can be glass or sapphire. The second temporary substrate is removed using a laser lift-off (LLO) process, and impurities are removed using an acid pickling method.

[0192] refer to Figure 26 and Figure 27 The light-emitting unit 103 includes a second semiconductor layer 1033, a light-emitting layer 1032, and a first semiconductor layer 1031, which are stacked sequentially in a direction away from the first temporary substrate.

[0193] Subsequently, inductively coupled plasma (ICP), Cl2, or BCl3 can be used to thin or etch away the gallium nitride buffer layer in the first semiconductor layer 1031. For example... Figure 27 The middle section shows the removal of the gallium nitride buffer layer.

[0194] Step S103: Bond the first target structure and the second target structure together.

[0195] refer to Figure 28 The color conversion unit 102 is aligned and bonded to the light-emitting surface of the light-emitting unit 103 using adhesive bonding or similar methods. In this case, the first semiconductor layer 1031, the light-emitting layer 1032, and the second semiconductor layer 1033 are stacked sequentially in a direction away from the initial substrate 101a. The orthographic projection of the light-emitting layer 1032 of the light-emitting unit 103 onto the initial substrate 101a overlaps with the orthographic projection of the optical functional layer 1024 onto the initial substrate 101a.

[0196] Step S104: Remove the first temporary substrate.

[0197] refer to Figure 29The first temporary substrate is removed by laser lift-off using methods such as LLO, and the temporary bonding adhesive is removed by methods such as ashing, exposing the first electrode 107 and the second electrode 108.

[0198] Subsequently, the initial substrate 101a can be thinned to obtain substrate 101. Using a thicker substrate 101 during the fabrication of the light-emitting component is beneficial for the processing of the light-emitting component, and the final thinning can facilitate the use of subsequent processes.

[0199] Finally, a blue film is attached to the side of the substrate 101 away from the electrode for protection, and then laser cutting is used to obtain a single light-emitting component (single light-emitting chip).

[0200] In summary, this application provides a method for fabricating a light-emitting component. The light-emitting component fabricated by this method includes a substrate, a color conversion unit, a light-emitting unit, and a filling layer. The light-emitting unit includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light-emitting layer includes multiple light-emitting pillars. Therefore, the light emitted from the area of ​​a single light-emitting pillar can be emitted as much as possible along a direction perpendicular to the substrate, and the light from the area of ​​a single light-emitting pillar can also be directed to the areas of adjacent light-emitting pillars before being emitted again along a direction perpendicular to the substrate. This allows the light emitted by the light-emitting unit to be emitted as much as possible along a direction perpendicular to the substrate, reducing the wide-angle light emission of the light-emitting unit, thereby avoiding crosstalk between light from light-emitting units of different colors and improving the light-emitting effect of the light-emitting component.

[0201] Figure 30 This is a schematic diagram of the structure of a display substrate provided in an embodiment of this application. (Reference) Figure 30 The display substrate includes a driving backplate 200 and a light-emitting component 100 provided in the above embodiments. The driving backplate 200 is used to support the light-emitting component 100 and provide driving signals to the light-emitting component 100.

[0202] Optional, see reference Figure 31 The multiple light-emitting components 100 in the display substrate are independently arranged, meaning that the light-emitting components 100 are independent of each other, thus enabling the maintenance and replacement of individual light-emitting components 100. Optionally, the light-emitting components 100 can be independent chip structures, with different light-emitting components 100 distributed at intervals. For example, the different light-emitting components 100 are isolated by air.

[0203] Optionally, the display substrate can be a display screen in a mobile phone, laptop, or flat-panel computer, or it can be an outdoor advertising screen.

[0204] Since the display substrate can have essentially the same technical effects as the light-emitting components described in the previous embodiments, for the sake of brevity, the technical effects of the display substrate will not be described again here.

[0205] This disclosure describes several embodiments, but these descriptions are exemplary and not limiting, and it will be apparent to those skilled in the art that many more embodiments and implementations are possible within the scope of the embodiments described herein. Although many possible combinations of features are shown in the drawings and discussed in the detailed description, many other combinations of the disclosed features are also possible. Unless specifically limited, any feature or element of any embodiment may be used in combination with, or may replace, any feature or element of any other embodiment.

[0206] This disclosure includes and contemplates combinations of features and elements known to those skilled in the art. The embodiments, features, and elements disclosed in this disclosure may also be combined with any conventional features or elements to form a unique inventive scheme as defined by the claims. Any feature or element of any embodiment may also be combined with features or elements from other inventive schemes to form another unique inventive scheme as defined by the claims. Therefore, it should be understood that any feature shown and / or discussed in this disclosure may be implemented individually or in any suitable combination. Therefore, the embodiments are not limited except by the limitations imposed by the appended claims and their equivalents. Furthermore, various modifications and changes may be made within the scope of the appended claims.

[0207] Furthermore, in describing representative embodiments, the specification may have presented methods and / or processes as a specific sequence of steps. However, the method or process should not be limited to the specific order of steps described herein, to the extent that the method or process does not depend on the specific order of steps described herein. As will be understood by those skilled in the art, other sequences of steps are also possible. Therefore, the specific order of steps set forth in the specification should not be construed as a limitation of the claims. Moreover, the claims relating to the method and / or process should not be limited to the steps performed in the order written, and those skilled in the art will readily understand that these orders can be varied and still remain within the spirit and scope of the embodiments disclosed herein.

[0208] In the accompanying drawings, the size of one or more constituent elements, the thickness of layers, or areas are sometimes exaggerated for clarity. Furthermore, the drawings schematically illustrate ideal examples, and this disclosure is not limited to the shapes or numerical values ​​shown in the drawings.

[0209] The ordinal numbers such as "first," "second," and "third" used in this specification are used to avoid confusion among the constituent elements, not to limit the quantity. The term "multiple" in this disclosure refers to two or more quantities.

[0210] The thickness range of the film layer in this specification is A to B, which means that the thickness is between A and B, including the two endpoints of A and B.

[0211] In this specification, for convenience, terms such as "middle," "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships in conjunction with the accompanying drawings. This is solely for the purpose of facilitating the description and simplification, and does not imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this disclosure. The positional relationships of the constituent elements may be appropriately varied depending on the orientation of the constituent elements being described. Therefore, the use of terms not limited to those described in the specification may be appropriately replaced as needed.

[0212] In this specification, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they may refer to a fixed connection, a detachable connection, or an integral connection; a mechanical connection or an electrical connection; a direct connection or an indirect connection via an intermediate component, or a connection within two components. Those skilled in the art will understand the meaning of these terms in this disclosure as appropriate.

[0213] In this specification, "connection" includes the situation where constituent elements are connected together by a component that has a certain electrical function. There are no particular limitations on the "component that has a certain electrical function," as long as it enables the transmission of electrical signals between the connected constituent elements. Examples of "components that have a certain electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with various functions.

[0214] In this specification, "parallel" refers to the state where the angle formed by two straight lines is greater than or equal to -10° and less than 10°, and therefore also includes the state where the angle is greater than or equal to -5° and less than 5°. Similarly, "perpendicular" refers to the state where the angle formed by two straight lines is greater than or equal to 80° and less than 100°, and therefore also includes the state where the angle is greater than or equal to 85° and less than 95°.

[0215] In this specification, the terms "film" and "layer" may be interchanged. For example, "conductive layer" may sometimes be replaced with "conductive film." Similarly, "insulating film" may sometimes be replaced with "insulating layer."

[0216] In this disclosure, "thickness" and "height" refer to the vertical distance between the surface of the film layer away from the substrate and the surface of the film layer closer to the substrate.

[0217] In this specification, the shapes such as rectangles are not strictly defined; they can be approximate rectangles, and there may be minor deformations due to tolerances, as well as chamfers, curved edges, and other deformations.

[0218] In this disclosure, “about” means a value that is not strictly limited and allows for process and measurement errors.

[0219] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A light-emitting component, characterized in that, The light-emitting component includes: Base; A color conversion unit located on one side of the substrate; the color conversion unit includes: a light-shielding layer, a limiting dam layer, a light-filtering layer, and an optical functional layer. The light-shielding layer has a light-transmitting hole. The light-filtering layer includes a light-filtering unit corresponding to the light-transmitting hole. The orthographic projection of the light-filtering unit on the substrate overlaps with the orthographic projection of the corresponding light-transmitting hole on the substrate. The limiting dam layer is located on the side of the light-shielding layer away from the substrate. The limiting dam layer has an opening area corresponding to the light-transmitting hole. The orthographic projection of the opening area on the substrate overlaps with the orthographic projection of the corresponding light-transmitting hole on the substrate. The optical functional layer includes a color conversion section located within the opening area. At least a portion of the color conversion section is used to convert the color of light entering the color conversion section. A light-emitting unit located on the side of the color conversion unit away from the substrate, the light-emitting unit comprising: a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked sequentially in a direction away from the substrate; wherein, the light-emitting layer comprises a plurality of light-emitting pillars arranged in an array and spaced apart, and the orthographic projection of the light-emitting layer on the substrate and the orthographic projection of the optical functional layer on the substrate overlap; And a filling layer, wherein the filling layer is located at least between adjacent light-emitting pillars.

2. The light-emitting component according to claim 1, characterized in that, The second semiconductor layer includes a plurality of first semiconductor pillars arranged in an array and spaced apart. The plurality of first semiconductor pillars and the plurality of light-emitting pillars are correspondingly arranged, and the orthographic projection of the first semiconductor pillar on the substrate and the orthographic projection of the corresponding light-emitting pillar on the substrate overlap. The filling layer is also located between adjacent first semiconductor pillars in the second semiconductor layer.

3. The light-emitting component according to claim 2, characterized in that, The light-emitting unit further includes: a first current spreading layer and a second current spreading layer stacked sequentially on the side of the second semiconductor layer away from the substrate; The first current spreading layer includes a plurality of transmission pillars arranged in an array and spaced apart. The plurality of transmission pillars and the plurality of light-emitting pillars are correspondingly arranged, and the orthographic projection of the transmission pillars on the substrate overlaps with the orthographic projection of the corresponding light-emitting pillars on the substrate. The filling layer is located between adjacent transmission pillars in the first current spreading layer, and the filling layer exposes the side of the transmission pillar away from the substrate. The second current spreading layer and the side of the transmission pillar away from the substrate are in contact.

4. The light-emitting component according to claim 3, characterized in that, The first semiconductor layer includes a plurality of second semiconductor pillars; The plurality of second semiconductor pillars and the plurality of light-emitting pillars are correspondingly arranged, and the orthographic projection of the second semiconductor pillar on the substrate and the orthographic projection of the corresponding light-emitting pillar on the substrate overlap; The filling layer is also located between adjacent second semiconductor pillars in the first semiconductor layer.

5. The light-emitting component according to claim 1, characterized in that, The first semiconductor layer includes a plurality of third semiconductor pillars arranged in an array and spaced apart. The plurality of third semiconductor pillars and the plurality of light-emitting pillars are correspondingly arranged, and the orthographic projection of the third semiconductor pillars on the substrate and the orthographic projection of the corresponding light-emitting pillars on the substrate overlap. The filling layer is also located between adjacent third semiconductor pillars in the first semiconductor layer.

6. The light-emitting component according to any one of claims 1 to 5, characterized in that, The light-emitting component includes: a plurality of light-emitting units; In this embodiment, the light-emitting layer of each of the plurality of light-emitting units includes the plurality of light-emitting pillars, and the filling layer includes a plurality of filling portions corresponding to the plurality of light-emitting units, with each filling portion located between adjacent light-emitting pillars in the light-emitting layer of the corresponding light-emitting unit.

7. The light-emitting component according to claim 6, characterized in that, The first semiconductor layer of the plurality of light-emitting units is a common film layer, and the first semiconductor layer includes: a common connection portion, a plurality of unit connection portions corresponding to the plurality of light-emitting units, and an auxiliary portion connected to the common connection portion and the plurality of unit connection portions; the light-emitting layer of the light-emitting unit is connected to the corresponding unit connection portion; The light-emitting component also includes: A common electrode is connected to the common connection portion; An insulating layer includes a first via and a plurality of second vias, the first via exposing at least a portion of the common electrode, the plurality of second vias corresponding to the plurality of light-emitting units, and the second vias exposing at least a portion of the corresponding light-emitting unit; A first electrode, which is connected to the common electrode via the first via; And a plurality of second electrodes, wherein the plurality of second electrodes are disposed corresponding to the plurality of light-emitting units, wherein the second electrode is located on the side of the corresponding light-emitting unit away from the substrate, and is electrically connected to the second semiconductor layer in the corresponding light-emitting unit.

8. The light-emitting component according to claim 6, characterized in that, The plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit; The first light-emitting unit has a different light-emitting color, the second light-emitting unit has a different light-emitting color, and the third light-emitting unit has a different light-emitting color.

9. The light-emitting component according to claim 8, characterized in that, The light-emitting component is a light-emitting chip; The light-shielding layer has a plurality of light-transmitting holes, including a first light-transmitting hole, a second light-transmitting hole and a third light-transmitting hole. The first light-transmitting hole is correspondingly disposed to the light-emitting layer of the first light-emitting unit, the second light-transmitting hole is correspondingly disposed to the light-emitting layer of the second light-emitting unit, and the third light-transmitting hole is correspondingly disposed to the light-emitting layer of the third light-emitting unit. The color conversion unit includes a plurality of filter units, which include a first filter unit, a second filter unit, and a third filter unit. The orthographic projection of the first filter unit on the substrate overlaps with the orthographic projection of the first light-transmitting aperture on the substrate and is correspondingly disposed with the light-emitting layer of the first light-emitting unit. The orthographic projection of the second filter unit on the substrate overlaps with the orthographic projection of the second light-transmitting aperture on the substrate and is correspondingly disposed with the light-emitting layer of the second light-emitting unit. The orthographic projection of the third filter unit on the substrate overlaps with the orthographic projection of the third light-transmitting aperture on the substrate and is correspondingly disposed with the light-emitting layer of the third light-emitting unit. The defined dam layer has a plurality of opening areas, including a first opening area, a second opening area, and a third opening area. The orthographic projection of the first opening area on the substrate overlaps with the orthographic projection of the first light-transmitting hole on the substrate and is correspondingly disposed with the light-emitting layer of the first light-emitting unit. The orthographic projection of the second opening area on the substrate overlaps with the orthographic projection of the second light-transmitting hole on the substrate and is correspondingly disposed with the light-emitting layer of the second light-emitting unit. The orthographic projection of the third opening area on the substrate overlaps with the orthographic projection of the third light-transmitting hole on the substrate and is correspondingly disposed with the light-emitting layer of the third light-emitting unit. The color conversion unit includes multiple optical functional layers, each including a first color conversion unit, a second color conversion unit, and a third color conversion unit. The first color conversion unit is disposed within the first opening area, the second color conversion unit is disposed within the second opening area, and the third color conversion unit is disposed within the third opening area.

10. The light-emitting component according to any one of claims 1 to 5, characterized in that, The light-emitting component includes multiple pillar groups, and each pillar group includes at least the light-emitting pillar; The side length of the orthographic projection of the column group on the substrate ranges from 0.3 micrometers to 1 micrometer, the interval between the orthographic projections of two adjacent column groups on the substrate ranges from 0.3 micrometers to 1 micrometer, and the height of the column group ranges from 0.3 micrometers to 1.5 micrometers.

11. The light-emitting component according to any one of claims 1 to 5, characterized in that, The first semiconductor layer comprises N-type doped gallium nitride, the second semiconductor layer comprises P-type doped gallium nitride, and the light-emitting layer comprises a multi-quantum-well layer.

12. A method for preparing a light-emitting component, characterized in that, The method includes: A first target structure is obtained, comprising: an initial substrate, and a color conversion unit located on one side of the initial substrate; the color conversion unit comprises: a light-shielding layer, a limiting dam layer, a filter layer, and an optical functional layer; the light-shielding layer has a light-transmitting aperture; the filter layer includes a filter unit corresponding to the light-transmitting aperture; the orthographic projection of the filter unit on the initial substrate overlaps with the orthographic projection of the corresponding light-transmitting aperture on the substrate; the limiting dam layer is located on the side of the light-shielding layer away from the substrate; the limiting dam layer has an opening area corresponding to the light-transmitting aperture; the orthographic projection of the opening area on the initial substrate overlaps with the orthographic projection of the corresponding light-transmitting aperture on the initial substrate; the optical functional layer is located within the opening area; at least a portion of the optical functional layer is used to convert the color of light entering the optical functional layer. A second target structure is obtained, the second target structure including a first temporary substrate, and a light-emitting unit and a filling layer located on one side of the first temporary substrate. The light-emitting unit includes: a second semiconductor layer, a light-emitting layer and a first semiconductor layer stacked sequentially in a direction away from the first temporary substrate; wherein, the light-emitting layer includes a plurality of light-emitting pillars arranged in an array and spaced apart; the filling layer is located at least between adjacent light-emitting pillars. The first target structure and the second target structure are bonded together such that the first semiconductor layer, the light-emitting layer, and the second semiconductor layer are stacked sequentially in a direction away from the initial substrate, and the orthographic projection of the light-emitting layer on the initial substrate and the orthographic projection of the optical functional layer on the initial substrate overlap. Remove the first temporary substrate.

13. The method according to claim 12, characterized in that, The acquisition of the second target structure includes: A second temporary substrate is obtained, and a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a second current spreading layer, and a filling layer are located on one side of the second temporary substrate; the first semiconductor layer, the light-emitting layer, the second semiconductor layer, the first current spreading layer, and the second current spreading layer are stacked in a direction away from the second temporary substrate; the filling layer is also located between adjacent first semiconductor pillars in the second semiconductor layer, between adjacent transport pillars in the first current spreading layer, and between adjacent second semiconductor pillars in the first semiconductor layer; A common electrode is formed on the side of the common connection portion of the first semiconductor layer away from the second temporary substrate; An insulating layer is formed on the side of the second semiconductor layer and the common electrode away from the second temporary substrate. The insulating layer includes a first via and a second via, the first via exposing at least a portion of the common electrode and the second via exposing at least a portion of the corresponding light-emitting unit. A first electrode and a second electrode are formed. The first electrode is connected to the common electrode through the first via, and the second electrode is electrically connected to the second semiconductor layer in the light-emitting unit through the second via. A first temporary substrate is formed on the side of the first electrode and the second electrode away from the second temporary substrate, and the second temporary substrate is removed.

14. The method according to claim 13, characterized in that, The acquisition of the second temporary substrate, and the first semiconductor layer, the light-emitting layer, the second semiconductor layer, and the filling layer located on one side of the second temporary substrate, includes: A first semiconductor thin film, a light-emitting thin film, a second semiconductor thin film, and a first current-transmitting thin film are formed on one side of the second temporary substrate. The first current transport film, the second semiconductor film, the light-emitting film, and the first semiconductor film are etched using a masking process to obtain multiple transport pillars of the first current extension layer, multiple first semiconductor pillars of the second semiconductor layer, multiple light-emitting pillars of the light-emitting layer, and multiple second semiconductor pillars of the first semiconductor layer. An insulating material is filled in the intervals between adjacent second semiconductor pillars, the intervals between adjacent light-emitting pillars, the intervals between adjacent first semiconductor pillars, and the intervals between adjacent transmission pillars to obtain a filling layer, wherein the filling layer is exposed on the side of the plurality of transmission pillars away from the second temporary substrate. A second current spreading layer is formed on the side of the plurality of transmission pillars away from the second temporary substrate and on the side of the filling layer away from the second temporary substrate.

15. A display substrate, characterized in that, The display substrate includes a driving backplate and a plurality of light-emitting components as described in any one of claims 1 to 11; the driving backplate is used to support the light-emitting components and provide driving signals to the light-emitting components.

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