High throughput bga interconnect structure shock test method and system
By employing a high-throughput BGA interconnect structure impact testing method, a multi-path test structure was prepared and resistance changes were monitored in real time. This solved the problems of low efficiency and insufficient failure monitoring in traditional testing methods, and enabled rapid and accurate BGA performance evaluation.
Patent Information
- Application Number
- CN202610956143.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-06-30
- Publication Date
- 2026-08-25
AI Technical Summary
Traditional BGA mechanical impact testing can only test a small number of samples or a single parameter, which is difficult to meet the needs of rapid and batch screening and evaluation of various material systems, different component ratios or different structural parameters. In addition, it lacks real-time in-situ monitoring methods to capture the moment of failure and understand the failure mechanism.
A high-throughput BGA interconnect structure impact test method was adopted. A test structure containing multiple BGA interconnect paths was prepared, and the resistance change was monitored in real time using an in-situ monitoring device. Impact loads were applied synchronously to evaluate the impact resistance performance.
It enables efficient mechanical shock reliability evaluation of multiple BGA test subjects, shortens the R&D cycle, reduces costs, and provides accurate failure data to support material and process optimization.
Smart Images
Figure CN122631459A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a testing method and system, and more particularly to a high-throughput BGA interconnect structure impact testing method and system. Background Technology
[0002] BGA (Ball Grid Array) packages are widely used in modern electronic products due to their high I / O density and excellent electrical and thermal properties. However, BGA solder joints are prone to fracture and failure under impact loads, leading to functional malfunctions in electronic devices. Therefore, with the increasing portability of electronic products and the diversification of application environments, the reliability of BGA interconnect structures under mechanical shocks (such as drops and collisions) has become a critical issue.
[0003] Traditional BGA mechanical impact testing typically only tests a small number of samples or a single parameter configuration at a time, resulting in long testing cycles and high costs. This makes it difficult to meet the needs for rapid, batch screening and evaluation of BGAs with various material systems, different component ratios, or different structural parameters. Especially in the stages of new material development or process optimization, there is a need for a method that can efficiently and concurrently evaluate the mechanical impact resistance of BGAs.
[0004] In addition, it is crucial to monitor the health status of the BGA interconnect structure in real time during the impact process in order to accurately capture the moment of failure and understand the failure mechanism. Summary of the Invention
[0005] The purpose of this invention is to overcome the shortcomings of the existing technology and provide a high-throughput BGA interconnect structure impact testing method and system, which can efficiently evaluate the mechanical impact reliability of BGAs with the same material system but different component ratios or the same component ratio but different process parameters, and realize in-situ resistance monitoring during the test process.
[0006] According to the technical solution provided by the present invention, a method for impact testing of a high-throughput BGA interconnect structure is provided, the impact testing method comprising: A high-throughput BGA test structure is fabricated, comprising at least one BGA interconnect path, wherein the BGA interconnect path includes a BGA test body, and the BGA test body includes a plurality of BGA units connected in series. The high-throughput BGA test structure is assembled on a mechanical shock test bench, and each BGA interconnect path in the high-throughput BGA test structure is connected to an in-situ monitoring device for in-situ monitoring. A mechanical shock test bench was used to conduct shock tests on the high-throughput BGA test structure, and in-situ monitoring equipment was used to monitor the health status of the BGA test pieces within the connected BGA interconnect paths during the shock test. During impact testing, impact loads are synchronously applied to each BGA interconnect path within the high-throughput BGA test structure. The impact resistance of the BGA test body within the BGA interconnect is determined based on the impact load state of each BGA interconnect path during the impact test and the monitoring status during the impact test.
[0007] Fabrication of high-throughput BGA test structures includes: Provide a test motherboard and at least one test daughterboard; The required number of BGA units are fixedly assembled on each test daughterboard, and the test daughterboard equipped with BGA units is flip-chip fixed on the test motherboard to form a BGA interconnect path based on a test daughterboard and the corresponding BGA units on the test motherboard. The test motherboard and the test daughterboard will be interconnected with the BGA units corresponding to the test daughterboard to form a BGA test body within the BGA interconnect path.
[0008] When assembling BGA cells on the test daughterboard, the following steps are included: The required number of BGA cells are mounted on the test sub-board, and then all the BGA cells are simultaneously soldered onto the test sub-board using a reflow soldering process. All BGA cells soldered onto the same test subboard have the same soldering temperature characteristics.
[0009] When multiple test sub-boards exist simultaneously, the BGA cells on different test sub-boards may have the same or different soldering temperature characteristics. When BGA cells on different test subboards have different soldering temperature characteristics, the composition ratio of the corresponding BGA cells will be different.
[0010] When flip-mounting a test daughterboard equipped with BGA units onto a test motherboard, the BGA units on the test daughterboard should be soldered and fixed to the test motherboard using a reflow soldering process.
[0011] The test motherboard includes a test lead-out terminal block for bringing out BGA test bodies, and can be connected to in-situ monitoring equipment through the test lead-out terminal block.
[0012] The materials of the test sub-board and the test motherboard include FR-4; Within the high-throughput BGA test architecture, each test daughterboard is parallel to the test motherboard.
[0013] When using in-situ monitoring equipment to monitor the BGA test body's status during impact testing, at least the failure state of the BGA test body during impact testing should be determined.
[0014] When determining the failure state of a BGA test piece during impact testing, the in-situ monitoring equipment should at least monitor the resistance state of the BGA test piece. If the resistance of the BGA test element determines that the BGA test element is in an open circuit state, then the BGA test element is determined to have failed in the impact test.
[0015] A high-throughput BGA interconnect structure impact testing system is provided for performing the impact testing method described above.
[0016] Advantages of this invention: By integrating one or more test daughter boards into the test motherboard, the high-throughput BGA test structure can include one or more BGA interconnect paths, thereby enabling mechanical shock tests on multiple BGA test subjects at one time, significantly improving test efficiency and shortening the R&D cycle.
[0017] By monitoring the resistance change of the BGA test body in real time during the test, the failure moment of the BGA interconnect structure can be accurately captured, which can also realize in-situ resistance monitoring and provide accurate data for failure analysis.
[0018] It is suitable for comparative evaluation of BGA units with different component ratios under the same material system, which helps to quickly screen out materials or process solutions with better impact resistance, reduces the preparation time and equipment occupation time of a single test, and has a low overall cost. Attached Figure Description
[0019] Figure 1 This is a schematic diagram of an embodiment of the impact test of the present invention.
[0020] Figure 2 This is a schematic diagram of one embodiment of the high-throughput BGA test structure of the present invention.
[0021] Figure 3 This is a schematic diagram of an embodiment of the present invention in which a test daughterboard and a test motherboard form a high-age BGA interconnect path.
[0022] Figure 4 This is a schematic diagram of an embodiment of the present invention that utilizes a mechanical impact testing bench and in-situ monitoring equipment to conduct impact tests.
[0023] Explanation of reference numerals in the attached diagram: 100-High-throughput BGA test structure, 110-Test motherboard, 120-Test daughterboard, 130-Test lead-out first terminal, 140-Test lead-out second terminal, 150-Row and column test terminals, 160-BGA cell, 170-Motherboard first serial lead-out pad, 180-Motherboard second serial lead-out pad, 200-Mechanical impact test bench, 300-In-situ monitoring equipment. Detailed Implementation
[0024] The present invention will be further described below with reference to specific accompanying drawings and embodiments.
[0025] To efficiently evaluate the mechanical shock reliability of BGA cell 160 and monitor in-situ resistance during testing, this invention provides a high-throughput BGA interconnect structure shock testing method. Specifically, the shock testing method includes: A high-throughput BGA test structure 100 is fabricated, comprising at least one BGA interconnect path, wherein the BGA interconnect path includes a BGA test body, and the BGA test body includes a plurality of BGA units 160 connected in series. The high-throughput BGA test structure 100 is assembled on the mechanical impact test bench 200, and each BGA interconnect path in the high-throughput BGA test structure 100 is connected to the in-situ monitoring device 300 for in-situ monitoring. The high-throughput BGA test structure 100 was subjected to impact testing using a mechanical impact test bench 200, and the health status of the BGA test pieces within the connected BGA interconnect pathways was monitored during the impact test using an in-situ monitoring device 300. During the impact test, impact loads are synchronously applied to each BGA interconnect path within the high-throughput BGA test structure 100. The impact resistance of the BGA test body within the BGA interconnect is determined based on the impact load state of each BGA interconnect path during the impact test and the monitoring status during the impact test.
[0026] Figure 1 The diagram illustrates a flow chart of an embodiment of the impact test according to the present invention. As shown in the diagram, during the impact test, a high-throughput BGA test structure 100 should first be prepared; that is, the high-throughput BGA test structure 100 is the object of the impact test according to the present invention. Specifically, the high-throughput BGA test structure 100 includes at least one BGA interconnect path, and each BGA interconnect path should include a BGA test element. The BGA test element should be formed by multiple BGA units 160 connected in series. It should be noted that during the impact test, the impact resistance performance of the BGA test element within each BGA interconnect path should be determined.
[0027] In one embodiment of the present invention, the fabrication of the high-throughput BGA test structure 100 includes: Provides a test motherboard 110 and at least one test daughterboard 120; A required number of BGA units 160 are fixedly assembled on each test daughter board 120, and the test daughter board 120 equipped with BGA units 160 is flip-mounted and fixed on the test mother board 110, so as to form a BGA interconnection path based on a test daughter board 120 and the corresponding BGA units 160 and the test mother board 110. The test mother board 110 and the test daughter board 120 will be interconnected with the BGA units 160 corresponding to the test daughter board 120 to form a BGA test body in the BGA interconnection path.
[0028] It should be noted that when fabricating the high-throughput BGA test structure 100, at least one test motherboard 110 and at least one test daughterboard 120 should be provided. The number of BGA interconnect paths within the fabricated high-throughput BGA test structure 100 will differ depending on the number of test daughterboards 120. Generally, the number of BGA interconnect paths within the fabricated high-throughput BGA test structure 100 is consistent with the number of test daughterboards 120. Figure 2 The diagram shows an embodiment with four test daughter boards 120. In this case, the four test daughter boards 120 cooperate with a test mother board 110 to form four BGA interconnect paths within the high-throughput BGA test structure 100.
[0029] In practice, the test motherboard 110 and test daughterboard 120 can be made of PCB board, meaning that corresponding circuits are printed on both the test motherboard 110 and test daughterboard 120. The corresponding material for the test daughterboard 120 and test motherboard 110 includes FR-4. When the circuits are printed on the test motherboard 110 and test daughterboard 120, corresponding solder joints are also provided on the test motherboard 110 and test daughterboard 120. Generally, one solder joint allows one BGA unit 160 to be soldered and fixed. The number of solder joints on the test daughterboard 120 can be selected as needed, such as to meet the requirements of the impact test.
[0030] After determining the number of BGA units 160 according to the impact test requirements, the corresponding printed circuits and solder joints on the test sub-board 120 can be determined based on the number of BGA units 160. Since the number of BGA units 160 is relatively large, the high throughput of this invention specifically refers to the large number of BGA units 160. After determining the number of BGA units 160 and the corresponding test sub-board 120, all BGA units 160 should be fixedly assembled on the test sub-board 120. Here, "all BGA units 160" specifically refers to the BGA units 160 corresponding to the test sub-board 120.
[0031] In one embodiment of the present invention, when assembling the BGA unit 160 on the test daughterboard 120, the following steps are included: The required number of BGA cells 160 are mounted on the test daughterboard 120, and then all the BGA cells 160 are simultaneously soldered onto the test daughterboard 120 using a reflow soldering process. All BGA cells 160 soldered on the same test subboard 120 have the same soldering temperature characteristics.
[0032] In practice, the BGA cells 160 are first mounted onto the corresponding solder joints of the test sub-board 120. Then, a reflow soldering process is used to solder all the BGA cells 160 mounted on the test sub-board 120 and fix them to the board. To meet the requirement of synchronous soldering in the reflow soldering process, all BGA cells 160 soldered on the same test sub-board 120 have the same soldering temperature characteristics, specifically meaning that their soldering temperatures are close or compatible. Furthermore, the process conditions for the reflow soldering process and the process of soldering the BGA cells 160 onto the test sub-board 120 using the reflow soldering process can be consistent with existing technologies, specifically designed to ensure that the BGA cells 160 are soldered onto the test sub-board 120.
[0033] In one embodiment of the present invention, when multiple test sub-boards 120 exist simultaneously, the BGA cells 160 on different test sub-boards 120 have the same or different soldering temperature characteristics, wherein... When the BGA units 160 on different test subboards 120 have different soldering temperature characteristics, the composition ratio of the corresponding BGA units 160 is different.
[0034] It should be noted that when multiple test sub-boards 120 exist, the number of BGA units 160 soldered on each test sub-board 120 can be different, or the number of BGA units 160 soldered on each test sub-board 120 can be the same. The specific choice depends on the requirements of the impact test, and will not be elaborated further here. Generally, when multiple test sub-boards 120 exist, the BGA units 160 can be soldered onto their respective test sub-boards 120. That is, the soldering of BGA units 160 on different test sub-boards 120 can be independent of each other. Therefore, the BGA units 160 on different test sub-boards 120 may have the same or different soldering temperature characteristics.
[0035] Generally, to meet testing requirements, when BGA cells 160 on different test sub-boards 120 have different soldering temperature characteristics, the component ratios of the corresponding BGA cells 160 are different. When multiple BGA interconnect paths are formed simultaneously based on the same test motherboard 110, impact tests can be performed on BGA cells 160 with different component ratios at the same time. The component ratios here are consistent with the prior art and will not be described in detail here.
[0036] After the BGA unit 160 is soldered onto the test daughter board 120, in order to form a BGA test body, the test daughter board 120 equipped with the BGA unit 160 should be flipped onto the test mother board 110. In one embodiment of the present invention, after the test daughter board 120 equipped with the BGA unit 160 is flipped onto the test mother board 110, at least the BGA unit 160 on the test daughter board 120 is soldered and fixed onto the test mother board 120 using a reflow soldering process. The method and process of soldering the BGA unit 160 onto the test mother board 110 using a reflow soldering process can be referred to the corresponding description above.
[0037] It should be understood that after the BGA unit 160 is soldered simultaneously onto the test motherboard 110 and the corresponding test daughterboard 120, all the BGA units 160 can be connected in series based on the corresponding printed circuits of the test motherboard 110 and the test daughterboard 120 to form a BGA test body, such as... Figure 3 As shown, the circuitry printed on the test motherboard 110 and the test daughterboard 120 is specifically designed to connect the BGA units 160 in series and form a BGA test module. Furthermore, all the BGA units 160 here correspond to a specific BGA unit 160 on a test daughterboard 120.
[0038] Once all the test daughter boards 120 are assembled onto the test mother board 110 using the above method, the fabrication of the high-throughput BGA test structure 100 is complete. Of course, the high-throughput BGA test structure 100 can also be fabricated using other methods, which will not be illustrated here.
[0039] Depend on Figure 1 and Figure 4 It is known that when conducting impact tests, the BGA interconnect path should be connected to the in-situ monitoring device 300. In order to facilitate the connection with the in-situ monitoring device 300, in one embodiment of the present invention, the test motherboard 110 includes a test lead-out terminal group for leading out the BGA test body, and can be connected to the in-situ monitoring device 300 through the test lead-out terminal group.
[0040] Figure 2 In this configuration, the test lead-out terminal group includes a first test lead-out terminal 130 and a second test lead-out terminal 140. The two ends of the BGA test piece can be led out through the first test lead-out terminal 130 and the second test lead-out terminal 140, allowing the BGA test piece to function as a resistive unit. The first test lead-out terminal 130 and the second test lead-out terminal 140 should be located on the side of the test motherboard 110 to facilitate connection with the in-situ monitoring device 300. Figure 3In general, a first serial lead-out pad 170 and a second serial lead-out pad 180 can be formed on the test motherboard 110. After the corresponding lead-outs are made through the first serial lead-out pad 170 and the second serial lead-out pad 180, test lead-out first terminals 130 and test lead-out second terminals 140 distributed on the side of the test motherboard 110 can be obtained.
[0041] In a specific implementation, row and column test terminal groups can also be provided on the test motherboard 110. Each row and column test terminal group can include several row and column test terminals 150. Through these row and column test terminals 150, a row or column of BGA units 160 arranged in an array can be led out, allowing for the necessary testing of each column or row of BGA units 160. When the high-throughput BGA test structure 100 is prepared using the above method, each test daughterboard 120 within the high-throughput BGA test structure 100 is parallel to the test motherboard 110.
[0042] In specific implementation, after the high-throughput BGA test structure 100 is prepared, it should be assembled on the mechanical shock test bench 200. The mechanical shock test bench 200 can adopt a commonly used form, specifically designed to be able to perform shock tests and synchronously apply shock loads to each BGA interconnect path. That is, when the high-throughput BGA test structure 100 includes 4 BGA interconnect paths, the mechanical shock test bench 200 should be able to synchronously apply the required shock loads to the 4 BGA interconnect paths. The magnitude of the applied shock load can be selected as needed to meet the requirements of the shock test.
[0043] In one embodiment of the present invention, when using an in-situ monitoring device 300 to monitor the BGA test body's monitoring status during an impact test, at least the failure state of the BGA test body during the impact test is determined.
[0044] Specifically, when determining the failure state of the BGA test piece during impact testing, the in-situ monitoring device 300 monitors at least the resistance state of the BGA test piece, wherein... If the resistance of the BGA test element determines that the BGA test element is in an open circuit state, then the BGA test element is determined to have failed in the impact test.
[0045] In practical implementation, the in-situ monitoring device 300 can adopt existing commonly used forms, specifically designed to monitor the resistance status of the BGA test object. Generally, when the resistance of the monitored BGA test object suddenly increases, it can be determined that the BGA test object is in an open circuit state. In this case, it can be determined that the BGA test object has failed in the impact test; otherwise, it can be determined that the BGA test object has not failed. In addition, the in-situ monitoring device 300 can use existing commonly used technical means to determine whether the BGA test object is in an open circuit state. Specific determination methods will not be illustrated here.
[0046] It should be noted that, through the above method, the in-situ monitoring device 300 can record the number of impacts experienced by each BGA test piece when it first fails. In high-throughput testing, BGA cells 160 with different material composition ratios can be compared in terms of average failure lifetime and failure distribution, thereby evaluating the impact of different ratios on the mechanical shock resistance of BGAs. This allows for efficient mechanical shock reliability assessment of BGAs with different material composition ratios and the acquisition of in-situ failure data, providing strong experimental evidence for BGA packaging design and material selection.
[0047] In addition, the present invention can also provide a high-throughput BGA interconnect structure impact testing system, specifically, the high-throughput BGA interconnect structure impact testing system can be used to perform the impact testing method described above.
[0048] As can be seen from the above description, the high-throughput BGA interconnect structure impact test system may include the aforementioned mechanical impact test bench 200, in-situ monitoring equipment 300, and necessary equipment for preparing the high-throughput BGA test structure 100. The specific method for performing the impact test can be referred to the above description, and will not be repeated here.
Claims
1. A method for impact testing of high-throughput BGA interconnect structures, characterized in that, The impact testing method includes: A high-throughput BGA test structure is fabricated, comprising at least one BGA interconnect path, wherein the BGA interconnect path includes a BGA test body, and the BGA test body includes a plurality of BGA units connected in series. The high-throughput BGA test structure is assembled on a mechanical shock test bench, and each BGA interconnect path in the high-throughput BGA test structure is connected to an in-situ monitoring device for in-situ monitoring. A mechanical shock test bench was used to conduct shock tests on the high-throughput BGA test structure, and in-situ monitoring equipment was used to monitor the health status of the BGA test pieces within the connected BGA interconnect paths during the shock test. During impact testing, impact loads are synchronously applied to each BGA interconnect path within the high-throughput BGA test structure. The impact resistance of the BGA test body within the BGA interconnect is determined based on the impact load state of each BGA interconnect path during the impact test and the monitoring status during the impact test.
2. The impact testing method for high-throughput BGA interconnect structures according to claim 1, characterized in that, Fabrication of high-throughput BGA test structures includes: Provide a test motherboard and at least one test daughterboard; The required number of BGA units are fixedly assembled on each test daughterboard, and the test daughterboard equipped with BGA units is flip-chip fixed on the test motherboard to form a BGA interconnect path based on a test daughterboard and the corresponding BGA units on the test motherboard. The test motherboard and the test daughterboard will be interconnected with the BGA units corresponding to the test daughterboard to form a BGA test body within the BGA interconnect path.
3. The impact testing method for high-throughput BGA interconnect structures according to claim 2, characterized in that, When assembling BGA cells on the test daughterboard, the following steps are included: The required number of BGA cells are mounted on the test sub-board, and then all the BGA cells are simultaneously soldered onto the test sub-board using a reflow soldering process. All BGA cells soldered onto the same test subboard have the same soldering temperature characteristics.
4. The impact testing method for high-throughput BGA interconnect structures according to claim 3, characterized in that, When multiple test sub-boards exist simultaneously, the BGA cells on different test sub-boards may have the same or different soldering temperature characteristics. When BGA cells on different test subboards have different soldering temperature characteristics, the composition ratio of the corresponding BGA cells will be different.
5. The impact testing method for high-throughput BGA interconnect structures according to claim 1, characterized in that, When flip-mounting a test daughterboard equipped with BGA units onto a test motherboard, the BGA units on the test daughterboard should be soldered and fixed to the test motherboard using a reflow soldering process.
6. The impact testing method for high-throughput BGA interconnect structures according to claim 2, characterized in that, The test motherboard includes a test lead-out terminal block for bringing out BGA test bodies, and can be connected to in-situ monitoring equipment through the test lead-out terminal block.
7. The impact testing method for high-throughput BGA interconnect structures according to claim 2, characterized in that, The materials of the test sub-board and the test motherboard include FR-4; Within the high-throughput BGA test architecture, each test daughterboard is parallel to the test motherboard.
8. The impact testing method for high-throughput BGA interconnect structures according to any one of claims 1 to 7, characterized in that, When using in-situ monitoring equipment to monitor the BGA test body's status during impact testing, at least the failure state of the BGA test body during impact testing should be determined.
9. The impact testing method for high-throughput BGA interconnect structures according to claim 8, characterized in that, When determining the failure state of a BGA test piece during impact testing, the in-situ monitoring equipment should at least monitor the resistance state of the BGA test piece. If the resistance of the BGA test element determines that the BGA test element is in an open circuit state, then the BGA test element is determined to have failed in the impact test.
10. A high-throughput BGA interconnect structure impact testing system, characterized in that, The method for performing the impact test according to any one of claims 1 to 9.