Method for adjusting morphology of rapid thermal oxidation film layer

Abstract

The application relates to the technical field of semiconductors, and provides a rapid thermal oxidation film layer morphology adjusting method, which comprises the following steps: S1: multiple concentric circular and / or annular heating areas are formed in a heating cavity; S2: multiple temperature detection positions are set; S3: a sensitivity curve of film layer thickness at each position of a wafer along a radial direction and temperature change at each temperature detection position is established; S4: sensitivity coefficients of each position of the wafer affected by temperature at each temperature detection position are obtained, a mathematical model about film layer thickness change amount at a certain position of the wafer is established based on temperature change amount at each temperature detection position and the sensitivity coefficients; and S5: temperature change amount at each temperature detection position is adjusted based on the mathematical model to control the film layer thickness at each position of the wafer. Through the method, the film layer morphology can be accurately adjusted, the wafer surface film layer thickness consistency is relatively optimal, and the film layer morphology consistency between different machines is also relatively optimal.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method for rapidly adjusting the morphology of thermally oxidized films. Background Technology

[0002] Rapid thermal oxidation is a core branch of rapid thermal processing (RTP) technology, which specifically refers to the process of heating a wafer to a high temperature (typically 800°C to 1150°C) in an oxygen-containing atmosphere within a very short time (usually tens of seconds to several minutes) to grow a high-quality silicon dioxide film on its surface.

[0003] The temperature uniformity of rapid thermal oxidation has a significant impact on the film thickness uniformity. To ensure temperature uniformity, modern RTP systems employ several precision control technologies:

[0004] 1. Multi-zone independent dynamic temperature control system

[0005] This is the core of achieving uniform heating. The system divides the heating source into multiple independently controlled regions (e.g., 6 zones, 8 zones). By monitoring the temperature of different regions of the wafer in real time, the system dynamically adjusts the temperature of each region to compensate for effects such as edge heat loss. Advanced systems can control the temperature difference on the wafer surface within ±1℃ to ±1.5℃.

[0006] 2. High-precision non-contact temperature measurement

[0007] Because RTP heats up extremely rapidly (50-100℃ / second), traditional contact temperature measurement methods cannot respond. Infrared pyrometers are commonly used for non-contact, real-time temperature measurement. The challenge lies in the fact that the emissivity of silicon varies with temperature, wavelength, and surface film state, which can lead to reading errors. Therefore, multi-wavelength pyrometers or model-based real-time compensation algorithms are required.

[0008] 3. Optimization of wafer rotation and cavity design

[0009] Wafer rotation: Rotating the wafer at a constant speed (usually 90-300 rpm) during the heating process can effectively average the radial temperature gradient and improve process uniformity.

[0010] Cavity and reflector design: Optimizing the geometry of the reaction chamber, the curvature of the reflector, and the gap between the guard rings can reduce radiative heat loss and improve the thermal field distribution. Studies have shown that appropriately reducing the gap between the wafer and the guard ring can significantly reduce edge temperature non-uniformity.

[0011] In the heating chamber, multiple temperature sensors are typically installed to monitor the temperature of different areas. PID temperature feedback regulation of the heating source in each area is achieved through temperature feedback from these sensors. In existing technologies, it is generally assumed that the heating source in each area only affects the temperature of its own region, ignoring its impact on other areas. This makes it difficult to comprehensively assess the morphology of the film grown on the wafer surface during temperature regulation, resulting in poor consistency in film thickness on wafers from the same equipment and significant differences in film morphology between different equipment.

[0012] Based on this, the present invention requires a method for rapidly adjusting the morphology of thermally oxidized films. This method facilitates precise adjustment of the film morphology, ensures better consistency of film thickness on the wafer surface, and also provides better consistency of film morphology between different equipment. Summary of the Invention

[0013] This invention provides a method for rapidly adjusting the morphology of thermally oxidized films. This method facilitates precise adjustment of the film morphology, ensures better consistency of film thickness on the wafer surface, and also provides better consistency of film morphology between different equipment.

[0014] This invention provides a method for rapidly adjusting the morphology of thermally oxidized films, comprising the following steps:

[0015] S1: Divide the heating cavity into multiple concentric circular and / or annular heating areas, each of which is independently temperature-controlled by a corresponding heating source;

[0016] S2: Multiple temperature detection positions are set, and each of the temperature detection positions is arranged radially in the heating cavity;

[0017] S3: Establish sensitivity curves of film thickness at various radial positions on the wafer and temperature changes at each temperature detection position;

[0018] S4: Based on the sensitivity curves, obtain the sensitivity coefficients of each location on the wafer affected by the temperature at each temperature detection location, and establish a mathematical model of the change in film thickness at a certain location on the wafer based on the temperature change at each temperature detection location and the sensitivity coefficients at each temperature detection location.

[0019] S5: Adjust the temperature change at each of the temperature detection locations based on the mathematical model to control the film thickness at each location on the wafer.

[0020] Optionally, step S4 further includes:

[0021] Calculate the weighting factor at each of the temperature detection locations, and update the mathematical model based on the weighting factor.

[0022] Optionally, the mathematical model is ΔRTOr = R1·SrP1·ΔO1 + R2·SrP2·ΔO2 + … + Ri·SrPi·ΔOi;

[0023] in:

[0024] ΔRTOr is the change in film thickness at a distance r from the wafer center;

[0025] i represents the number of temperature detection locations;

[0026] R1, R2, and Ri are the weighting factors for each temperature detection location;

[0027] SrP1, SrP2, and SrPi are the sensitivity coefficients for each temperature detection location.

[0028] ΔO1, ΔO2, and ΔOi represent the temperature changes at each temperature detection location.

[0029] Optionally, calculating the weighting factor at each of the temperature detection locations includes the following steps:

[0030] The film thickness at various locations on the wafer is predicted based on a mathematical model, and the actual film thickness at various locations on the wafer surface is detected after thermal oxidation is completed.

[0031] The weighting factor at each temperature detection location is calculated based on the difference between the predicted film thickness and the actual film thickness.

[0032] Optionally, in step S5, adjusting the temperature change at each of the temperature detection locations based on the mathematical model includes the following steps:

[0033] Determine the heating area corresponding to each temperature detection location, and adjust the power of the heating source for the corresponding heating area.

[0034] Optionally, step S3 includes the following steps:

[0035] Select a temperature detection location and control the temperature change at that location, while keeping the temperature at the other temperature detection locations constant.

[0036] The thickness variation of the film layer generated at various radial positions on the wafer surface is measured, and the sensitivity curve at the temperature detection position is generated.

[0037] Optionally, each of the temperature detection locations is situated in a different heating zone.

[0038] Optionally, when the diameter of the wafer is 200 mm, six temperature detection positions are provided;

[0039] When the wafer is placed in the heating cavity, each of the detection positions is arranged radially from the center of the wafer to the edge of the wafer.

[0040] Optionally, the inner diameter of the heating cavity is larger than the diameter of the wafer, the number of heating areas is greater than the number of temperature detection positions, and the inner diameter of at least one heating area is larger than the diameter of the wafer.

[0041] Optionally, when the wafer is placed in the heating cavity, one of the temperature detection positions corresponds to the center of the wafer.

[0042] The rapid thermal oxidation film morphology adjustment method of the present invention is beneficial to the precise adjustment of film morphology, ensuring better consistency of film thickness on wafer surface, and better consistency of film morphology between different machines. Attached Figure Description

[0043] Figure 1 This is a distribution diagram of the heating area and temperature detection location according to an embodiment of the present invention;

[0044] Figure 2 This is a schematic diagram of the wafer detection coordinates of the present invention;

[0045] Figure 3 This is a sensitivity curve of a temperature detection location according to the present invention;

[0046] Figure 4 Sensitivity curves for the remaining temperature detection locations in this invention;

[0047] Figure 5 This is a comparison curve of film layer data from Example 1 of the present invention;

[0048] Figure 6 This is a comparison curve of film layer data in Example 2 of the present invention.

[0049] In the attached diagram:

[0050] 10 - Load-bearing components;

[0051] a - First outline;

[0052] b - First contour line. Detailed Implementation

[0053] The rapid thermal oxidation film morphology adjustment method proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this invention.

[0054] As used in this invention, the singular forms “a,” “an,” and “the” include plural objects; the term “or” is generally used to mean “and / or”; the term “a number” is generally used to mean “at least one”; and the term “at least two” is generally used to mean “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature. Additionally, as used in this invention, “installed,” “connected,” “linked,” and “set” on one element from another should be interpreted broadly, generally indicating only a connection, coupling, mating, or transmission relationship between the two elements, which can be direct or indirect through an intermediate element. This connection, coupling, mating, or transmission should not be construed as indicating or implying a spatial positional relationship between the two elements, i.e., one element can be located arbitrarily inside, outside, above, below, or to one side of another element, unless otherwise explicitly stated. For those skilled in the art, the specific meaning of the above terms in this invention can be understood according to the specific circumstances. Furthermore, directional terms such as above, below, up, down, upward, downward, left, right, etc., are used relative to exemplary embodiments as shown in the figures, with upward or up direction pointing towards the top of the corresponding figure, and downward or down direction pointing towards the bottom of the corresponding figure.

[0055] This embodiment provides a method for rapidly adjusting the morphology of thermally oxidized films, including the following steps:

[0056] S1: The heating chamber is divided into multiple concentric circular and / or annular heating areas, and each heating area is independently temperature-controlled by a corresponding heating source.

[0057] Combination Figure 1 As shown, in this embodiment, a disk-shaped support 10 is provided in the heating chamber (not shown in the figure). The upper surface of the support 10 is used to support the wafer for performing a rapid thermal oxidation process. The upper surface of the support 10 is circular, and the center of the upper surface of the support 10 is concentric with each heating region. When the wafer is placed on the upper surface of the support 10, the wafer, the upper surface of the support 10, and each heating region are concentric.

[0058] Combination Figure 1 As shown, the first contour line a is the contour line corresponding to the wafer when a wafer with a diameter of 200 mm (8-inch wafer) is placed on the upper surface of the carrier 10. The second contour line b is the contour line corresponding to the wafer when a wafer with a diameter of 150 mm (6-inch wafer) is placed on the upper surface of the carrier 10.

[0059] This embodiment uses a 200mm diameter wafer (8-inch wafer) as an example to illustrate the adjustment method.

[0060] Combination Figure 1 As shown, the inner diameter of the heating cavity is larger than the diameter of the wafer, the number of heating areas is greater than the number of temperature detection positions, and the inner diameter of at least one heating area is larger than the diameter of the wafer. Specifically, the heating cavity is divided into 12 heating areas, each labeled with the numbers ①, ②, ③, ④, ⑤, ⑥, ⑦, ⑧, ⑨, ⑩, ⑪, and ⑫. Heating area ① is a circular area, corresponding to the center of the wafer when it is placed on the support 10. The remaining heating areas are concentric annular areas, connected radially. The outer diameter of heating areas ① to ⑦ is smaller than the outer diameter of the 200mm wafer, the inner diameter of heating area ⑧ is smaller than the outer diameter of the 200mm wafer, and the outer diameter of heating area ⑨ to ⑫ is larger than the outer diameter of the 200mm wafer. Therefore, heating areas ① to ⑧ can directly cover the 200mm wafer, and the inner diameter of heating areas ⑨ to ⑫ is larger than the outer diameter of the 200mm wafer. Multiple heating lamps are evenly distributed circumferentially within each heating zone. The heating lamps within each heating zone form an independently controlled heating source, thereby enabling independent temperature regulation of each heating zone.

[0061] The above-mentioned arrangement of the heating cavity and heating zone can completely cover the entire wafer and the area surrounding the wafer, enabling precise temperature adjustment of both the wafer area and the surrounding area.

[0062] S2: Set multiple temperature detection positions, and each of the temperature detection positions is arranged radially in the heating cavity.

[0063] Combination Figure 1 As shown, in this embodiment, there are eight preset positions, namely position P1, position P2, position P3, position P4, position P5, position P6, position P7 and position P8.

[0064] Based on the testing requirements of a 200mm wafer, some or all of the preset positions can be selected as temperature detection positions, ensuring that each heating zone corresponding to the wafer has at least one temperature detection position. In this embodiment, positions P1, P2, P3, P4, P6, and P7 are selected as temperature detection positions, resulting in a total of six temperature detection positions. These six detection positions are respectively referred to as the first detection position (position P1), the second detection position (position P2), the third detection position (position P3), the fourth detection position (position P4), the fifth detection position (position P6), and the sixth detection position (position P7).

[0065] The six temperature detection positions are arranged radially within the heating cavity. Specifically, when the wafer is supported on the upper surface of the support member 10, the six detection positions are arranged radially from the center to the edge of the wafer. The first detection position (position P1), the second detection position (position P2), the third detection position (position P3), the fourth detection position (position P4), the fifth detection position (position P6), and the sixth detection position (position P7) are located in heating regions ①, ②, ③, ④, ⑤, and ⑦, respectively. The first detection position (position P1) corresponds to the center of the support member 10, that is, the center of the wafer.

[0066] Each of the temperature detection locations is situated in a different heating zone to monitor the temperature of each zone in real time.

[0067] In this embodiment, the radial position of each temperature detection location is defined. In the axial direction, the upper surface of the wafer can be used as the axial position of each temperature detection location.

[0068] In actual rapid thermal oxidation processes, multiple infrared pyrometers can be configured in the heating chamber to perform non-contact, real-time temperature measurement at various temperature detection positions on the surface of each wafer.

[0069] S3: Establish sensitivity curves for the film thickness at various radial locations on the wafer and the temperature changes at each temperature detection location. The sensitivity curves represent the magnitude of the influence of temperature changes at each temperature detection location on film formation at each location on the wafer.

[0070] S4: Based on the sensitivity curves, obtain the sensitivity coefficient of each location on the wafer affected by the temperature at each temperature detection location. The larger the sensitivity coefficient of the temperature detection location, the greater the impact of the temperature change at the temperature detection location on the film formation at that location on the wafer.

[0071] A mathematical model is established based on the temperature change at each of the temperature detection locations and the sensitivity coefficient at each of the temperature detection locations regarding the change in film thickness at a certain location on the wafer.

[0072] The mathematical model calibrates the mathematical relationship between the change in film thickness at a certain location on the wafer and the aforementioned sensitivity coefficient and temperature change. Once the mathematical model is determined, the change in film thickness at a certain location on the wafer is controlled by adjusting the temperature change at each temperature detection location, thereby controlling the film thickness.

[0073] S5: Based on the mathematical model, adjust the temperature change at each of the temperature detection positions to control the film thickness at each location on the wafer. Specifically, first determine the heating area corresponding to each temperature detection position, and then adjust the power of the heating source for the corresponding heating area to adjust the temperature change of that heating area.

[0074] Furthermore, step S4 also includes:

[0075] Calculate the weighting factor at each of the temperature detection locations, and update the mathematical model based on the weighting factor. Specifically, this includes the following steps:

[0076] S4-1: Predict the film thickness at various locations on the wafer based on a mathematical model, and detect the actual film thickness at various locations on the wafer surface after thermal oxidation.

[0077] S4-2: Calculate the weighting factor at each temperature detection location based on the difference between the predicted film thickness and the actual film thickness.

[0078] By introducing weighting factors, the mathematical model is corrected to make the film thickness predicted by the mathematical model more similar to the film thickness data formed by rapid thermal oxidation of wafers, thereby improving the accuracy of the mathematical model.

[0079] In this embodiment, the mathematical model formed for a 200mm wafer and in conjunction with the above six temperature detection positions is ΔRTOr=R1·SrP1·ΔO1+R2·SrP2·ΔO2+…+Ri·SrPi·ΔOi;

[0080] in:

[0081] ΔRTOr is the change in film thickness at a distance r from the wafer center;

[0082] i represents the number of temperature detection locations;

[0083] R1, R2, and Ri are the weighting factors for each temperature detection location;

[0084] SrP1, SrP2, and SrPi are the sensitivity coefficients for each temperature detection location.

[0085] ΔO1, ΔO2, and ΔOi represent the temperature changes at each temperature detection location.

[0086] The mathematical model described above is the sum of the weighting factors, sensitivity coefficients, and temperature changes corresponding to the six temperature detection locations.

[0087] In actual rapid thermal oxidation processes, the target film thickness T can be set based on requirements, and the temperature change at each detection location can be calculated based on the above model when ∆RTOr at each location on the wafer equals T.

[0088] Furthermore, step S3 includes the following steps:

[0089] Select a temperature detection location and control the temperature change at that location, while keeping the temperature at the other temperature detection locations constant.

[0090] The thickness variation of the film layer generated at various radial positions on the wafer surface is measured to generate the sensitivity curve at the temperature detection position.

[0091] Combination Figure 3 As shown, this is the sensitivity curve of the first detection position (position P1). Based on this curve, the sensitivity coefficient SrP1 at each position on the wafer corresponding to the temperature change at the first detection position can be determined.

[0092] Combination Figure 2 As shown, horizontal and vertical coordinates are established on the wafer, and the intersection of the two coordinates is the center of the wafer.

[0093] Figure 3 In the sensitivity curve, the horizontal axis represents the position of the wafer, and its horizontal axis can correspond to... Figure 2 In the graph, the origin of the horizontal axis of the sensitivity curve represents the center of the wafer, and +100mm and -100mm on the horizontal axis represent the two edges of the wafer along one of its radial directions. Figure 3 In the sensitivity curve, the vertical axis represents the sensitivity value, and the blue curve represents the sensitivity curve.

[0094] Combination Figure 3 The sensitivity curve shown represents the magnitude of the effect of temperature change at the first detection position (position P1) on film formation at various locations on the wafer.

[0095] Since the first detection position (position P1) corresponds to the center of the wafer (the origin of the horizontal axis in the figure), the temperature change at the first detection position (position P1) has a significant impact on the film formation at the center of the wafer. Therefore, the zero coordinate of the horizontal axis corresponds to the highest sensitivity, which means that when the temperature changes at the first detection position (position P1), the film formation at the origin of the wafer has a significant impact.

[0096] Please continue to refer to this. Figure 3 As shown, taking the position at +100mm on the horizontal axis as an example, the vertical axis value corresponding to the sensitivity curve approaches zero. Therefore, the temperature change at the first detection position (position P1) has little effect on the film formation at the wafer edge (position at +100mm on the horizontal axis).

[0097] The sensitivity curve has positive and negative values ​​on the vertical axis. Therefore, when the temperature changes at the first detection position (position P1), the effect on film formation at some locations on the wafer is positive, while the effect on film formation at other locations on the wafer is negative.

[0098] The sensitivity coefficients of each location on the wafer affected by the temperature at the first detection position (position P1) can be obtained based on the aforementioned sensitivity curves. For example, to calculate the change in film thickness at the wafer center, the wafer center is the target location, the horizontal axis of the curve is set to 0, and the corresponding vertical axis value is read to obtain the corresponding sensitivity coefficient. Similarly, to determine the change in film thickness at the +50mm position on the wafer, the horizontal axis of the curve is set to +50mm, and the corresponding vertical axis value is read to obtain the corresponding sensitivity coefficient.

[0099] Similarly, combining Figure 4 As shown, sensitivity curves for the second detection position (position P2), third detection position (position P3), fourth detection position (position P4), fifth detection position (position P6), and sixth detection position (position P7) are presented respectively. Their meanings are... Figure 3 Similarly, this will not be elaborated upon here. For example, when calculating the change in film thickness at the center of a wafer, the wafer center is the target location. The horizontal axis of the curve is set to 0, and the curve values ​​of the vertical axis corresponding to the five sensitivity curves are read respectively, thereby obtaining the sensitivity coefficients corresponding to the five detection locations.

[0100] In this embodiment, based on the above sensitivity curve and after fitting and calculating the weighting factors at each of the temperature detection locations, the mathematical model is as follows:

[0101] ΔRTOr=R1·SrP1·ΔO1+R2·SrP2·ΔO2+R3·SrP3·ΔO3+R4·SrP4·ΔO4+R5·SrP5·ΔO5+R6·SrP6·ΔO6;

[0102] Where R1=0.94, R2=0.95, R3=0.94, R4=0.95, R5=0.99, and R6=0.98.

[0103] Combination Figure 5 and Figure 6 As shown, the film thickness of a 200mm wafer is verified based on the above mathematical model. Figure 5 The membrane data is from Case 1. Figure 6 For the membrane data in Case 2, Figure 5 and Figure 6 Data is collected from different machines.

[0104] by Figure 5 Taking the data as an example, the horizontal axis of the above graph corresponds to Figure 2 The horizontal axis of the wafer in the middle, as shown in the figure below, corresponds to... Figure 2 The vertical axis of the wafer.

[0105] by Figure 5 Taking the upper middle figure as an example, its horizontal axis represents the position of the wafer, with the origin of the horizontal axis corresponding to the center position of the wafer, and its vertical axis corresponds to the film thickness.

[0106] Curve Pre Data represents the film thickness distribution on the wafer surface after rapid thermal oxidation using existing technology; curve Post Data represents the film thickness distribution on the wafer surface after actual temperature control adjustment using the rapid thermal oxidation film morphology adjustment method described in this embodiment; and curve Predict Data represents the film thickness distribution on the wafer surface predicted using the mathematical model described in this embodiment.

[0107] based on Figure 5 As shown in the figure above, after rapid thermal oxidation using existing technology, the film thickness distribution along the horizontal axis on the wafer surface fluctuates significantly, resulting in poor film morphology. After applying the adjustment method of this invention, the film thickness distribution along the horizontal axis on the wafer surface is more uniform, the film morphology is better, and the film thickness distribution is similar to the predicted thickness distribution data, indicating that the mathematical model in this embodiment has better prediction accuracy.

[0108] Similarly, based on Figure 5 As shown in the figure below, after rapid thermal oxidation using existing technology, the film thickness distribution along the vertical axis on the wafer surface fluctuates significantly, resulting in poor film morphology. After applying the adjustment method of this invention, the film thickness distribution along the vertical axis on the wafer surface is more uniform, the film morphology is better, and the film thickness distribution is similar to the predicted thickness distribution data, indicating that the mathematical model in this embodiment has better prediction accuracy.

[0109] Combination Figure 6 As shown, the verification data from another machine shows that the film thickness distribution along the horizontal and vertical axes on the wafer surface is relatively uniform, the film morphology is superior, and the film thickness distribution is similar to the predicted thickness distribution data, indicating that the mathematical model in this embodiment has better prediction accuracy. Furthermore, compared to… Figure 5 The data comparison shows that the consistency of film morphology is better among different machines.

[0110] The above embodiments provide a model adjustment method based on a 200mm wafer, in which six temperature detection positions are set in the mathematical model. In other alternative embodiments, other numbers of temperature detection positions can be selected, for example, eight temperature detection positions can be set, each corresponding to heating regions ① to ⑧; or, for example, two, three, four, five, seven or more temperature detection positions can be set.

[0111] In the above embodiments, taking a 200mm wafer (eight-inch wafer) as an example, the number and location of temperature detection positions are set, and a mathematical model is established based on this. In other alternative embodiments, the carrier 10 can support a wafer with a diameter of 150mm (six-inch wafer), in which case the number and location of temperature detection positions can be set based on the size of the wafer. In other alternative embodiments, the number and location of temperature detection positions can be set based on the actual size of the actual wafer and the distribution of the heating area.

[0112] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0113] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A method for rapidly adjusting the morphology of a thermally oxidized film, characterized in that, Includes the following steps: S1: Divide the heating cavity into multiple concentric circular and / or annular heating areas, each of which is independently temperature-controlled by a corresponding heating source; S2: Multiple temperature detection positions are set, and each of the temperature detection positions is arranged radially in the heating cavity; S3: Establish sensitivity curves of film thickness at various radial positions on the wafer and temperature changes at each temperature detection position; S4: Based on the sensitivity curves, obtain the sensitivity coefficients of each location on the wafer affected by the temperature at each temperature detection location, and establish a mathematical model of the change in film thickness at a certain location on the wafer based on the temperature change at each temperature detection location and the sensitivity coefficients at each temperature detection location. S5: Adjust the temperature change at each of the temperature detection locations based on the mathematical model to control the film thickness at each location on the wafer.

2. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 1, characterized in that, Step S4 also includes: Calculate the weighting factor at each of the temperature detection locations, and update the mathematical model based on the weighting factor.

3. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 1 or 2, characterized in that, The mathematical model is ΔRTOr = R1·SrP1·ΔO1 + R2·SrP2·ΔO2 + … + Ri·SrPi·ΔOi; in: ∆RTOr is the change in film thickness at a distance r from the wafer center; i represents the number of temperature detection locations; R1, R2, and Ri are the weighting factors for each temperature detection location; SrP1, SrP2, and SrPi are the sensitivity coefficients for each temperature detection location; ΔO1, ΔO2, and ΔOi represent the temperature changes at each temperature detection location.

4. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 2, characterized in that, The calculation of the weighting factor at each of the temperature detection locations includes the following steps: The film thickness at various locations on the wafer is predicted based on a mathematical model, and the actual film thickness at various locations on the wafer surface is detected after thermal oxidation is completed. The weighting factor at each temperature detection location is calculated based on the difference between the predicted film thickness and the actual film thickness.

5. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 1, characterized in that, In step S5, adjusting the temperature change at each of the temperature detection locations based on the mathematical model includes the following steps: Determine the heating area corresponding to each temperature detection location, and adjust the power of the heating source for the corresponding heating area.

6. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 1, characterized in that, Step S3 includes the following steps: Select a temperature detection location and control the temperature change at that location, while keeping the temperature at the other temperature detection locations constant. The thickness variation of the film layer generated at various radial positions on the wafer surface is measured, and the sensitivity curve at the temperature detection position is generated.

7. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 1, characterized in that, Each of the temperature detection locations is situated in a different heating zone.

8. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 1, characterized in that, When the diameter of the wafer is 200mm, six temperature detection positions are set; When the wafer is placed in the heating cavity, each of the detection positions is arranged radially from the center of the wafer to the edge of the wafer.

9. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 1, characterized in that, The inner diameter of the heating cavity is larger than the diameter of the wafer, the number of heating areas is greater than the number of temperature detection positions, and the inner diameter of at least one heating area is larger than the diameter of the wafer.

10. The method for rapidly adjusting the morphology of a thermally oxidized film as described in claim 1, characterized in that, When the wafer is placed in the heating cavity, the temperature detection position corresponds to the center of the wafer.

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