Ultra-wideband low noise amplifier

Abstract

The application provides an ultra-wideband low-noise amplifier, which comprises an input matching circuit, an amplification circuit and an output matching circuit, the input matching circuit and the output matching circuit each comprise a plurality of matching control switches, the plurality of matching control switches are used for combinationally connecting or disconnecting switching control to adjust the size of input impedance matching or the size of output impedance matching according to whether the amplification circuit works in a high frequency band, a medium frequency band or a low frequency band; the output matching circuit further comprises a peaking inductance structure, the peaking inductance structure comprises a plurality of inductances and a plurality of inductance value adjusting switches, and the output matching circuit is further used for adjusting the connection relationship of different inductances in the peaking inductance structure by adjusting the connection or disconnection of each inductance value adjusting switch to adjust the peaking inductance value of the peaking inductance structure according to whether the amplification circuit works in the high frequency band, the medium frequency band or the low frequency band. The ultra-wideband low-noise amplifier provided by the application can flexibly configure the wideband gain and noise performance within the whole working frequency.

Description

Technical Field

[0001] This invention relates to the field of radio frequency front-end technology, and in particular to an ultra-wideband low-noise amplifier. Background Technology

[0002] The radio frequency (RF) front-end module is the core of an RF communication system. The low-noise amplifier (LNA), as its first-stage active device, must ensure sufficient gain and excellent noise figure to guarantee system sensitivity. With the widespread application of Sub-3 GHz (SUB3) band modules and the development of carrier aggregation (CA) technology, ultra-wideband LNAs have become crucial for meeting these requirements. Simultaneously, the miniaturization requirements of terminals impose constraints on module and chip dimensions. Therefore, designing an ultra-wideband LNA that balances carrier aggregation applications, performance, and size has become an urgent issue to be addressed.

[0003] Currently, the mainstream solution for supporting low-frequency operation in the SUB3 band high-frequency low-noise amplifier is: based on the N75 frequency design, an external matching network is added at the output end, and the inherent matching bit at the input end is used to adjust and adapt to the low frequency, so as to achieve low-frequency operation compatibility.

[0004] However, the above-mentioned solutions introduce low-frequency functionality through external matching, which increases hardware, assembly, and debugging costs. Furthermore, external matching can lead to poor core performance, with the gain and noise figure not reaching their optimal levels in low-frequency mode, failing to meet the signal quality and sensitivity requirements of carrier aggregation applications. In addition, existing solutions are not conducive to integration, as the additional matching module occupies space, conflicting with miniaturization requirements and limiting their application scope.

[0005] In summary, there is an urgent need to design a new ultrawideband low-noise amplifier to solve the above-mentioned technical problems. Summary of the Invention

[0006] This invention provides an ultra-wideband low-noise amplifier, which aims to solve the technical problem that existing low-noise amplifiers have poor performance due to the need for external matching to achieve low-frequency operation.

[0007] To solve the above technical problems, the present invention provides an ultra-wideband low-noise amplifier, including an input matching circuit, an amplification circuit, and an output matching circuit. The input matching circuit is used to achieve input impedance matching for the amplification circuit, and the output matching circuit is used to achieve output impedance matching for the amplification circuit. The present invention is characterized in that:

[0008] Both the input matching circuit and the output matching circuit include multiple matching control switches. These multiple matching control switches are used to combine and connect or disconnect the amplifier circuit according to whether the amplifier circuit is operating in the high-frequency band, mid-frequency band, or low-frequency band, so as to switch and control the adjustment of the input impedance matching size or the output impedance matching size. The output matching circuit further includes a peaking inductor structure, which includes multiple inductors and multiple inductance adjustment switches. The output matching circuit is also used to adjust the connection relationship of different inductors in the peaking inductor structure by adjusting the connection or disconnection of each of the inductance adjustment switches according to whether the amplifier circuit is operating in the high-frequency, mid-frequency or low-frequency range, so as to adjust the peaking inductance value of the peaking inductor structure.

[0009] Furthermore, the amplification circuit includes a first transistor and a second transistor; the drain of the first transistor is connected to the source of the second transistor, the gate of the first transistor serves as the input terminal of the amplification circuit and is connected to the output terminal of the input matching circuit, and the source of the first transistor is connected to ground via a series grounding path; the gate of the second transistor is used to connect to the bias voltage, and the drain of the second transistor serves as the output terminal of the amplification circuit and is connected to the input terminal of the output matching circuit.

[0010] Furthermore, the input matching circuit includes a first inductor, a second inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first matching control switch, a second matching control switch, and a frequency tuning switch, wherein: The first end of the first inductor serves as the input end of the input matching circuit for receiving radio frequency signals, and the second end of the first inductor is connected to the first end of the first capacitor. The second inductor serves as the grounding path, with its first end connected to the source of the first transistor and its second end grounded. The second terminal of the first capacitor serves as the output terminal of the input matching circuit. The first terminal of the second capacitor is connected to the first terminal of the first matching control switch, and the second terminal of the second capacitor is connected to the source of the first transistor. The first terminal of the third capacitor is connected to the first terminal of the second matching control switch, and the second terminal of the third capacitor is connected to the source of the first transistor. The first terminal of the fourth capacitor is connected to the second terminal of the first capacitor, and the second terminal of the fourth capacitor is connected to the first terminal of the frequency tuning switch. The second terminal of the first matching control switch is connected to the second terminal of the first capacitor; The second terminal of the second matching control switch is connected to the second terminal of the first capacitor; The second terminal of the frequency tuning switch is connected to the drain of the first transistor.

[0011] Furthermore, the output matching circuit includes a third inductor, a fourth inductor, a fifth inductor, a fifth capacitor, a sixth capacitor, a seventh capacitor, a third matching control switch, a fourth matching control switch, a first inductance adjustment switch, a second inductance adjustment switch, and a third inductance adjustment switch, wherein: The first end of the third inductor is connected to the first end of the first inductance value adjustment switch, and the second end of the third inductor is connected to the first end of the fourth inductor; The second end of the fourth inductor is connected to the first end of the fifth inductor; The second terminal of the fifth inductor serves as the input terminal of the output matching circuit; The first end of the fifth capacitor is connected to the first end of the fifth inductor, and the second end of the fifth capacitor serves as the output end of the output matching circuit, used to output the radio frequency signal amplified by the amplifier circuit. The first terminal of the sixth capacitor is connected to the first terminal of the third matching control switch, and the second terminal of the sixth capacitor is connected to the second terminal of the fifth capacitor; The first terminal of the seventh capacitor is connected to the first terminal of the fourth matching control switch, and the second terminal of the seventh capacitor is connected to the second terminal of the fifth capacitor; The second terminal of the third matching control switch is connected to the second terminal of the fifth inductor; The second terminal of the fourth matching control switch is connected to the second terminal of the fifth inductor; The second end of the first sensing value adjustment switch is used to connect to an external power supply voltage; The first end of the second inductance adjustment switch is used to connect to an external power supply voltage, and the second end of the second inductance adjustment switch is connected to the second end of the third inductor; The first end of the third inductance adjustment switch is connected to the first end of the third inductor, and the second end of the third inductance adjustment switch is connected to the second end of the third inductor; The third inductor, the fourth inductor, the fifth inductor, the first inductance adjustment switch, the second inductance adjustment switch, and the third inductance adjustment switch together constitute the peaked inductor structure. The third inductor and the fourth inductor are mutually inductively coupled, and the fourth inductor and the fifth inductor are mutually inductively coupled.

[0012] Furthermore, when the amplifier circuit operates in the high-frequency range, the first matching control switch, the second matching control switch, the third matching control switch, the fourth matching control switch, and the first inductance adjustment switch are all disconnected, while the second inductance adjustment switch and the third inductance adjustment switch are all connected.

[0013] Furthermore, when the amplifier circuit operates in the mid-frequency range, the first matching control switch, the third matching control switch, and the first inductance adjustment switch are all disconnected, while the second matching control switch, the fourth matching control switch, the second inductance adjustment switch, and the third inductance adjustment switch are all connected.

[0014] Furthermore, when the amplifier circuit operates in the low-frequency range, both the second and third inductance adjustment switches are disconnected, while the first, second, third, and fourth matching control switches, as well as the first inductance adjustment switch, are all connected.

[0015] Furthermore, the ultra-wideband low-noise amplifier also includes a first resistor, the first end of which is connected to the gate of the first transistor, and the second end of which is used to apply a first bias voltage.

[0016] Furthermore, the ultra-wideband low-noise amplifier also includes a second resistor and an eighth capacitor, wherein the first end of the second resistor is connected to the gate of the second transistor, and the second end of the second resistor is used to connect to a second bias voltage; The first terminal of the eighth capacitor is connected to the first terminal of the second resistor, and the second terminal of the eighth capacitor is grounded.

[0017] Furthermore, the ultra-wideband low-noise amplifier also includes a ninth capacitor, the first terminal of which is connected to the second terminal of the first inductance adjustment switch, and the second terminal of the ninth capacitor is grounded.

[0018] The beneficial effect achieved by this invention lies in proposing an ultra-wideband low-noise amplifier. The output matching of this ultra-wideband low-noise amplifier has a novel peaked inductor structure. Through the combination of control switches integrated in the input and output matching, the ultra-wideband low-noise amplifier proposed in this invention can flexibly configure broadband gain and noise performance throughout the entire operating frequency range, providing high-performance support for the widespread application of SUB3 band modules and carrier aggregation applications. Attached Figure Description

[0019] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings: Figure 1 This is a circuit diagram of an ultra-wideband low-noise amplifier provided in an embodiment of the present invention. Detailed Implementation

[0020] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0021] The specific embodiments / examples described herein are specific implementations of the present invention, used to illustrate the concept of the invention, and are illustrative and exemplary, and should not be construed as limiting the implementation methods or scope of the present invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein, all of which are within the protection scope of the present invention.

[0022] Example 1 Please refer to Figure 1 , Figure 1 This is a circuit diagram of an ultra-wideband low-noise amplifier provided in an embodiment of the present invention. The ultra-wideband low-noise amplifier 100 includes an input matching circuit 101, an amplification circuit 102, and an output matching circuit 103. The input matching circuit 101 is used to achieve input impedance matching for the amplification circuit 102, and the output matching circuit 103 is used to achieve output impedance matching for the amplification circuit 102. Both the input matching circuit 101 and the output matching circuit 103 include multiple matching control switches. The multiple matching control switches are used to combine and connect or disconnect the amplifier circuit 102 when it is operating in the high frequency band, the mid frequency band or the low frequency band, so as to switch and control the adjustment of the input impedance matching size or the output impedance matching size. The output matching circuit 103 further includes a peaking inductor structure 1031, which includes multiple inductors and multiple inductance adjustment switches. The output matching circuit 103 is also used to adjust the connection relationship of different inductors in the peaking inductor structure 1031 by adjusting the connection or disconnection of each of the inductance adjustment switches according to whether the amplifier circuit 102 is operating in the high-frequency, mid-frequency or low-frequency range, so as to adjust the peaking inductance value of the peaking inductor structure 1031.

[0023] For details, please refer to Figure 1 The amplifier circuit includes a first transistor M1 and a second transistor M2; the drain of the first transistor M1 is connected to the source of the second transistor M2, the gate of the first transistor M1 serves as the input terminal of the amplifier circuit 102 and is connected to the output terminal of the input matching circuit 101, and the source of the first transistor M1 is connected to ground via a series grounding path; the gate of the second transistor M2 is used to connect to the bias voltage (second bias voltage VB2), and the drain of the second transistor M2 serves as the output terminal of the amplifier circuit 102 and is connected to the input terminal of the output matching circuit 103.

[0024] The input matching circuit 101 includes a first inductor L1, a second inductor L2, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, and a first matching control switch SW. LB1 Second matching control switch SW MB1 and frequency tuning switch SW C ,in: The first end of the first inductor L1 serves as the input end of the input matching circuit 101, used to receive the radio frequency signal RFin, and the second end of the first inductor L1 is connected to the first end of the first capacitor C1. The second inductor L2 serves as the grounding path, with its first end connected to the source of the first transistor M1 and its second end grounded. The second terminal of the first capacitor C1 serves as the output terminal of the input matching circuit. The first terminal of the second capacitor C2 is connected to the first matching control switch SW LB1 The first terminal of the capacitor C2 is connected to the source of the first transistor M1, and the second terminal of the second capacitor C2 is connected to the source of the first transistor M1. The first terminal of the third capacitor C3 is connected to the second matching control switch SW MB1 The first end of the capacitor is connected, and the second end of the third capacitor C3 is connected to the source of the first transistor M1. The first terminal of the fourth capacitor C4 is connected to the second terminal of the first capacitor C1, and the second terminal of the fourth capacitor C4 is connected to the frequency tuning switch SW. C The first end is connected; First matching control switch SW LB1 The second end is connected to the second end of the first capacitor C1; Second matching control switch SW MB1 The second end is connected to the second end of the first capacitor C1; The frequency tuning switch SW C The second terminal is connected to the drain of the first transistor M1.

[0025] The output matching circuit 103 includes a third inductor L3, a fourth inductor L4, a fifth inductor L5, a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7, and a third matching control switch SW. LB2 Fourth matching control switch SW MB2 First sensitivity adjustment switch SW L1 Second sensitivity adjustment switch SW L21 and the third sensor value adjustment switch SW L22 ,in: The first terminal of the third inductor L3 is connected to the first inductance adjustment switch SWL1 The first end of the third inductor L3 is connected to the first end of the fourth inductor L4; The second end of the fourth inductor L4 is connected to the first end of the fifth inductor L5; The second terminal of the fifth inductor L5 serves as the input terminal of the output matching circuit 103; The first end of the fifth capacitor C5 is connected to the first end of the fifth inductor L5, and the second end of the fifth capacitor C5 serves as the output end of the output matching circuit 103, used to output the radio frequency signal RFout after being amplified by the amplifier circuit. The first terminal of the sixth capacitor C6 is connected to the third matching control switch SW LB2 The first end of the capacitor is connected, and the second end of the sixth capacitor C6 is connected to the second end of the fifth capacitor C5; The first terminal of the seventh capacitor C7 is connected to the fourth matching control switch SW MB2 The first end of the capacitor is connected, and the second end of the seventh capacitor C7 is connected to the second end of the fifth capacitor C5; The third matching control switch SW LB2 The second end is connected to the second end of the fifth inductor L5; The fourth matching control switch SW MB2 The second end is connected to the second end of the fifth inductor L5; First sensitivity adjustment switch SW L1 The second terminal is used to connect to the external power supply voltage VDD; Second sensitivity adjustment switch SW L21 The first terminal is used to connect to the external power supply voltage VDD, and the second inductance adjustment switch SW L21 The second end is connected to the second end of the third inductor L3; The third sensing value adjustment switch SW L22 The first terminal is connected to the first terminal of the third inductor L3, and the third inductance value adjustment switch SW L22 The second end is connected to the second end of the third inductor L3; The third inductor L3, the fourth inductor L4, the fifth inductor L5, and the first inductance adjustment switch SW L1 The second sensing value adjustment switch SW L21 and the third sensing value adjustment switch SW L22 Together they constitute the peaked inductor structure 1031, wherein the third inductor L3 and the fourth inductor L4 are mutually inductively coupled (coupling coefficient k1), and the fourth inductor L4 and the fifth inductor L5 are mutually inductively coupled (coupling coefficient k2).

[0026] The combination logic of each control switch in the ultra-wideband low-noise amplifier 100 proposed in the embodiments of the present invention is described below: When the amplifier circuit 102 operates in the high-frequency range, the first matching control switch SW LB1 The second matching control switch SW MB1 The third matching control switch SW LB2 The fourth matching control switch SW MB2 The frequency tuning switch SW C and the first sensitivity adjustment switch SW L1 Both are disconnected, and the second sensing value adjustment switch SW is turned off. L21 and the third sensing value adjustment switch SW L22 All are connected.

[0027] In this embodiment of the invention, the connection and disconnection of each matching control switch and inductance adjustment switch are controlled by an external unified logic signal. This logic signal confirms its working state by detecting the frequency of the input signal of the amplifier circuit 102 and adjusts the connection and disconnection state of each switch accordingly.

[0028] Specifically, when the amplifier circuit 102 operates at high frequencies, it adapts to the high-frequency signal transmission characteristics through the combinational logic described in the above embodiment, optimizing input and output matching and peaking gain. Specifically, the input matching circuit 101 retains only the first inductor L1 as an effective element. The first inductor L1 is adjusted to the optimal noise point inductance value at high frequencies, and in conjunction with other components of the input matching circuit 101, impedance matching is achieved, resulting in efficient transmission of low-noise signals. In the output matching circuit 103, the peaking inductor structure 1031 operates with the fourth inductor L4 and the fifth inductor L5 (the third inductor L3 is short-circuited), and output matching is achieved through the path of the fifth capacitor C5, thereby compensating for high-frequency gain roll-off and ensuring that the ultra-wideband low-noise amplifier 100 possesses excellent gain, noise figure, and signal transmission efficiency at high frequencies.

[0029] When the amplifier circuit 102 operates in the intermediate frequency range, the first matching control switch SW LB1 The third matching control switch SW LB2 and the first sensitivity adjustment switch SW L1 Both are disconnected, and the second matching control switch SW is turned off. MB1 The fourth matching control switch SW MB2 The frequency tuning switch SW C The second sensing value adjustment switch SW L21 and the third sensing value adjustment switch SW L22 All are connected.

[0030] When the amplifier circuit 102 operates at the mid-frequency range, it adapts to the characteristics of the mid-frequency signal through the combinational logic described in the above embodiment, balancing matching accuracy and gain stability. Specifically, in the input matching circuit 101, the second matching control switch SW... MB1 The connection allows the third capacitor C3 to be connected to the circuit, and the connection allows the fourth capacitor C4 to be connected to the circuit. Due to the Miller effect, the fourth capacitor C4 will form an equivalent capacitance at the input terminal of the amplifier circuit 102, thus working in conjunction with the third capacitor C3, the first inductor L1, and the first capacitor C1 to achieve mid-frequency input impedance matching, ensuring low-noise and efficient signal transmission. In the output matching circuit 103, the fourth matching control switch SW... MB2 The output circuit is optimized by connecting the fourth inductor L4 and the fifth inductor L5 in the peaked inductor structure 1031. They work together through a switch connection, and the mutual inductance coupling is used to compensate for the mid-frequency gain. The output is matched by the fifth capacitor C5 and the sixth capacitor C6 connected to the circuit, ensuring that the ultra-wideband low-noise amplifier 100 has stable gain and excellent noise performance in the mid-frequency band.

[0031] When the amplifier circuit 102 operates in the low-frequency range, the second inductance adjustment switch SW L21 and the third sensing value adjustment switch SW L22 Both are disconnected, the first matching control switch SW LB1 The second matching control switch SW MB1 The third matching control switch SW LB2 The fourth matching control switch SW MB2 The frequency tuning switch SW C and the first sensitivity adjustment switch SW L1 All are connected.

[0032] When the amplifier circuit 102 operates at low frequencies, it adapts to the characteristics of low-frequency signals through the combinational logic described in the above embodiment, ensuring matching effect and gain stability. Specifically, the input matching circuit 101 includes two matching control switches and a frequency tuning switch SW. C All capacitors are connected, ensuring that the second capacitor C2, the third capacitor C3, and the fourth capacitor C4 are all connected in the circuit. Together with the first inductor L1 and the first capacitor C1, this accurately achieves low-frequency input impedance matching, reducing signal loss and ensuring low-noise transmission. In the output matching circuit 103, two matching control switches are connected to optimize the output circuit, and the first inductance adjustment switch SW... L1 The connection enables the third inductor L3, the fourth inductor L4, and the fifth inductor L5 in the peaked inductor structure 1031 to work together, using mutual inductance coupling to compensate for low-frequency gain, and combining the fifth capacitor C5, the sixth capacitor C6, and the seventh capacitor C7 to complete output matching, ensuring that the ultra-wideband low-noise amplifier 100 has excellent gain and noise figure in the low-frequency range.

[0033] Specifically, such as Figure 1 As shown in the embodiment of the present invention, the ultra-wideband low-noise amplifier 100 further includes a first resistor R1, the first end of the first resistor R1 is connected to the gate of the first transistor M1, and the second end of the first resistor R1 is used to connect to a first bias voltage VB1.

[0034] The core function of the first resistor R1 is to provide a bias path for the gate of the first transistor M1. By using the first bias voltage VB1 connected to the second terminal, the static operating point of the gate of the first transistor M1 is set, ensuring that the transistor operates in a suitable amplification region and ensuring that the amplifier circuit 102 can stably realize the signal amplification function. At the same time, it can suppress gate noise interference and avoid affecting the matching effect of the input matching circuit 101 and the noise figure of the ultra-wideband low noise amplifier 100.

[0035] The ultra-wideband low-noise amplifier 100 also includes a second resistor R2 and an eighth capacitor C8. The first end of the second resistor R2 is connected to the gate of the second transistor M2, and the second end of the second resistor R2 is used to connect to the second bias voltage VB2. The first terminal of the eighth capacitor C8 is connected to the first terminal of the second resistor R2, and the second terminal of the eighth capacitor C8 is grounded.

[0036] The second resistor R2 provides a bias path for the gate of the second transistor M2. By connecting the second bias voltage VB2, its static operating point is set to ensure that the transistor operates in a suitable amplification region, thus ensuring that the amplifier circuit 102 amplifies the signal stably. The eighth capacitor C8 is a high-frequency bypass capacitor that filters out high-frequency noise in the second bias voltage VB2, preventing noise from interfering with the gate of the second transistor M2. At the same time, it stabilizes the gate potential and does not affect the gain and noise figure of the ultra-wideband low-noise amplifier 100.

[0037] The ultra-wideband low-noise amplifier 100 also includes a ninth capacitor C9, the first terminal of which is connected to the first inductance adjustment switch SW. L1 The second terminal of the ninth capacitor C9 is connected to ground.

[0038] The ninth capacitor, C9, is a high-frequency bypass capacitor, with one end connected to the first inductance adjustment switch SW. L1 The second terminal and one terminal are grounded to filter out high-frequency noise in the circuit of the peaking inductor structure 1031 and guide the noise to the ground terminal. This prevents the noise from interfering with the inductance stability of the peaking inductor structure 1031 and the matching effect of the output matching circuit 103, thus ensuring the signal purity and performance stability of the ultra-wideband low-noise amplifier 100 when it operates in each frequency band.

[0039] The beneficial effect achieved by this invention lies in proposing an ultra-wideband low-noise amplifier. The output matching of this ultra-wideband low-noise amplifier has a novel peaked inductor structure. Through the combination of control switches integrated in the input and output matching, the ultra-wideband low-noise amplifier proposed in this invention can flexibly configure broadband gain and noise performance throughout the entire operating frequency range, providing high-performance support for the widespread application of SUB3 band modules and carrier aggregation applications.

[0040] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0041] The embodiments of the present invention have been described above with reference to the accompanying drawings. The disclosed embodiments are merely preferred embodiments of the present invention. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many equivalent changes in form under the guidance of the present invention without departing from the spirit and scope of the claims. All such changes are within the protection scope of the present invention.

Claims

1. An ultra-wideband low-noise amplifier, comprising an input matching circuit, an amplification circuit, and an output matching circuit, wherein the input matching circuit is used to achieve input impedance matching for the amplification circuit, and the output matching circuit is used to achieve output impedance matching for the amplification circuit, characterized in that: Both the input matching circuit and the output matching circuit include multiple matching control switches. These multiple matching control switches are used to combine and connect or disconnect the amplifier circuit according to whether the amplifier circuit is operating in the high-frequency band, mid-frequency band, or low-frequency band, so as to switch and control the adjustment of the input impedance matching size or the output impedance matching size. The output matching circuit further includes a peaking inductor structure, which includes multiple inductors and multiple inductance adjustment switches. The output matching circuit is also used to adjust the connection relationship of different inductors in the peaking inductor structure by adjusting the connection or disconnection of each of the inductance adjustment switches according to whether the amplifier circuit is operating in the high-frequency, mid-frequency or low-frequency range, so as to adjust the peaking inductance value of the peaking inductor structure. The output matching circuit includes a third inductor, a fourth inductor, a fifth inductor, a fifth capacitor, a sixth capacitor, a seventh capacitor, a third matching control switch, a fourth matching control switch, a first inductance adjustment switch, a second inductance adjustment switch, and a third inductance adjustment switch, wherein: The first end of the third inductor is connected to the first end of the first inductance value adjustment switch, and the second end of the third inductor is connected to the first end of the fourth inductor; The second end of the fourth inductor is connected to the first end of the fifth inductor; The second terminal of the fifth inductor serves as the input terminal of the output matching circuit; The first end of the fifth capacitor is connected to the first end of the fifth inductor, and the second end of the fifth capacitor serves as the output end of the output matching circuit, used to output the radio frequency signal amplified by the amplifier circuit. The first terminal of the sixth capacitor is connected to the first terminal of the third matching control switch, and the second terminal of the sixth capacitor is connected to the second terminal of the fifth capacitor; The first terminal of the seventh capacitor is connected to the first terminal of the fourth matching control switch, and the second terminal of the seventh capacitor is connected to the second terminal of the fifth capacitor; The second terminal of the third matching control switch is connected to the second terminal of the fifth inductor; The second terminal of the fourth matching control switch is connected to the second terminal of the fifth inductor; The second end of the first sensing value adjustment switch is used to connect to an external power supply voltage; The first end of the second inductance adjustment switch is used to connect to an external power supply voltage, and the second end of the second inductance adjustment switch is connected to the second end of the third inductor; The first end of the third inductance adjustment switch is connected to the first end of the third inductor, and the second end of the third inductance adjustment switch is connected to the second end of the third inductor; The third inductor, the fourth inductor, the fifth inductor, the first inductance adjustment switch, the second inductance adjustment switch, and the third inductance adjustment switch together constitute the peaked inductor structure. The third inductor and the fourth inductor are mutually inductively coupled, and the fourth inductor and the fifth inductor are mutually inductively coupled.

2. The ultra-wideband low-noise amplifier according to claim 1, characterized in that, The amplifier circuit includes a first transistor and a second transistor; the drain of the first transistor is connected to the source of the second transistor, the gate of the first transistor serves as the input terminal of the amplifier circuit and is connected to the output terminal of the input matching circuit, and the source of the first transistor is connected to ground via a series grounding path. The gate of the second transistor is used to connect to the bias voltage, and the drain of the second transistor serves as the output terminal of the amplifier circuit and is connected to the input terminal of the output matching circuit.

3. The ultra-wideband low-noise amplifier according to claim 2, characterized in that, The input matching circuit includes a first inductor, a second inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first matching control switch, a second matching control switch, and a frequency tuning switch, wherein: The first end of the first inductor serves as the input end of the input matching circuit for receiving radio frequency signals, and the second end of the first inductor is connected to the first end of the first capacitor. The second inductor serves as the grounding path, with its first end connected to the source of the first transistor and its second end grounded. The second terminal of the first capacitor serves as the output terminal of the input matching circuit. The first terminal of the second capacitor is connected to the first terminal of the first matching control switch, and the second terminal of the second capacitor is connected to the source of the first transistor. The first terminal of the third capacitor is connected to the first terminal of the second matching control switch, and the second terminal of the third capacitor is connected to the source of the first transistor. The first terminal of the fourth capacitor is connected to the second terminal of the first capacitor, and the second terminal of the fourth capacitor is connected to the first terminal of the frequency tuning switch. The second terminal of the first matching control switch is connected to the second terminal of the first capacitor; The second terminal of the second matching control switch is connected to the second terminal of the first capacitor; The second terminal of the frequency tuning switch is connected to the drain of the first transistor.

4. The ultra-wideband low-noise amplifier according to claim 3, characterized in that, When the amplifier circuit operates in the high-frequency range, the first matching control switch, the second matching control switch, the third matching control switch, the fourth matching control switch, the frequency tuning switch, and the first inductance adjustment switch are all disconnected, while the second inductance adjustment switch and the third inductance adjustment switch are all connected.

5. The ultra-wideband low-noise amplifier according to claim 3, characterized in that, When the amplifier circuit operates in the mid-frequency range, the first matching control switch, the third matching control switch, and the first inductance adjustment switch are all disconnected, while the second matching control switch, the frequency tuning switch, the fourth matching control switch, the second inductance adjustment switch, and the third inductance adjustment switch are all connected.

6. The ultra-wideband low-noise amplifier according to claim 3, characterized in that, When the amplifier circuit operates in the low-frequency range, the second inductance adjustment switch and the third inductance adjustment switch are both disconnected, while the first matching control switch, the second matching control switch, the third matching control switch, the fourth matching control switch, the frequency tuning switch, and the first inductance adjustment switch are all connected.

7. The ultra-wideband low-noise amplifier according to claim 3, characterized in that, The ultra-wideband low-noise amplifier further includes a first resistor, the first end of which is connected to the gate of the first transistor, and the second end of which is used to apply a first bias voltage.

8. The ultra-wideband low-noise amplifier according to claim 3, characterized in that, The ultra-wideband low-noise amplifier further includes a second resistor and an eighth capacitor. The first end of the second resistor is connected to the gate of the second transistor, and the second end of the second resistor is used to connect to a second bias voltage. The first terminal of the eighth capacitor is connected to the first terminal of the second resistor, and the second terminal of the eighth capacitor is grounded.

9. The ultra-wideband low-noise amplifier according to claim 3, characterized in that, The ultra-wideband low-noise amplifier also includes a ninth capacitor, the first end of which is connected to the second end of the first inductance adjustment switch, and the second end of the ninth capacitor is grounded.

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