OLED (Organic Light Emitting Diode) film layer structure for preventing metal wire from being burnt during Frit welding

Abstract

The utility model relates to the field of display screen packaging, in particular to an OLED (Organic Light Emitting Diode) film layer structure for preventing a metal lead from being burnt during Frit welding. The light-emitting layer, the organic film layer and the inorganic film layers are located between a glass substrate and a glass cover plate, and the inorganic film layers are stacked below the organic film layer. The Frit glue on the two sides of the organic film layer divides the panel into an internal display area and packaging areas on the two sides. And a new inorganic film layer and a new heat insulation film layer are additionally arranged in the packaging area below the Frit glue in sequence. Aiming at the problem that a metal wire is burnt during Frit welding, the utility model provides a novel OLED device film layer structure, which not only can protect the metal wire of a TFT (thin film transistor) device from being burnt by laser during Frit welding, but also has a function of reflecting heat, indirectly improves the welding effect of Frit frame glue, and improves the product yield.

Description

Technical Field

[0001] The utility model relates to the field of display screen packaging, in particular to an OLED film layer structure for preventing metal wires from being burned during Frit welding. Background Art

[0002] AMOLED is the most popular display technology nowadays, with the characteristics of self-luminescence, fast response speed, and high contrast. AMOLED packaging includes flexible packaging and rigid packaging, among which the most important rigid packaging method is Frit packaging. The specific process of Frit packaging is: the TFT device with organic light-emitting material evaporated and the glass cover plate with Frit frame glue screen-printed are welded together by high-power infrared laser sintering to form a composite board. The Frit frame glue plays the role of isolating water and oxygen, and protects the organic light-emitting material in the composite board.

[0003] The instantaneous temperature of the infrared laser welding Frit frame glue can reach over 800℃, and the metal wire in the TFT device connected just below the Frit frame glue is a multi-layer metal structure (Mo-Al-Mo). After the temperature change process of "normal temperature-800℃-normal temperature", the metal wire is prone to film wrinkles between the metal Mo layer and the metal Al layer due to stress, which deteriorates the conductive effect, and then deteriorates the display effect and reduces the product yield. Summary of the invention

[0004] The technical problem to be solved by the utility model is to provide an OLED film layer structure for preventing metal wires from being burned during Frit welding, so as to achieve the purpose of avoiding the metal wires of the underlying TFT device from being burned when infrared laser welding Frit frame glue.

[0005] The utility model is achieved in this way:

[0006] An OLED film layer structure for preventing metal wires from being burned during Frit welding comprises, from top to bottom, a light-emitting layer located between a glass substrate and a glass cover plate, an organic film layer, and several inorganic film layers stacked thereunder; the Frit glue on both sides of the organic film layer divides the panel into an internal display area and packaging areas on both sides; new inorganic film layers and heat-insulating film layers are added in sequence to the packaging area below the Frit glue.

[0007] Furthermore, the thermal insulation film layer includes a substrate and a nanofiber film layer covering the substrate.

[0008] Furthermore, the substrate is a polyimide film layer.

[0009] Furthermore, the nanofiber membrane layer is a zirconium oxide-silicon oxide fiber membrane layer.

[0010] Furthermore, the plurality of inorganic film layers include, from bottom to top, a first inorganic film layer and a second inorganic film layer.

[0011] The advantages of the utility model are: in response to the problem of metal wires being burned during existing Frit welding, the utility model proposes a new OLED device film layer structure, which can not only protect the metal wires of the TFT device from being burned by laser during Frit welding, but also has the function of reflecting heat, thereby indirectly improving the welding effect of the Frit frame glue and improving the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The present invention will be further described below in conjunction with the embodiments with reference to the accompanying drawings.

[0013] Figure 1 It is a structural schematic diagram of the utility model.

[0014] Figure 2 for Figure 1 Schematic diagram of part of the structure.

[0015] The numbers in the figure are: light-emitting layer 1, organic film layer 2, Frit glue 3, passivation layer 4, thermal insulation film layer 5, first inorganic film layer 6, second inorganic film layer 7, glass substrate 100, glass cover plate 101, semiconductor 102, metal wire 103, infrared laser emitter 200; the dotted line indicates the dividing line between the internal display area and the packaging areas on both sides. DETAILED DESCRIPTION

[0016] In the description of the present invention, it should be understood that the description indicating the orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the scope of protection of the present invention.

[0017] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "disposed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0018] The technical solution of the utility model is as follows:

[0019] See also Figure 1 and Figure 2As shown, an OLED film layer structure for preventing metal wires from being burned during Frit welding according to the utility model includes, from top to bottom, a light-emitting layer 1, an organic film layer 2 and several inorganic film layers stacked thereunder, located between a glass substrate 100 (a glass substrate of a TFT device) and a glass cover plate 101 (a glass cover plate printed with Frit glue); the Frit glue 3 on both sides of the organic film layer 2 divides the panel into an internal display area and packaging areas on both sides, and the Frit glue forms a boundary between the internal AA area (Active Area, effective display area of ​​the screen) and the external packaging area of ​​the display screen; new inorganic film layers 4 and heat-insulating film layers 5 are added in sequence to the packaging area below the Frit glue 3.

[0020] Specifically, the plurality of inorganic film layers are divided into a first inorganic film layer 6 and a second inorganic film layer 7 from bottom to top; the light-emitting layer 1 and the film layer below it are combined together to form a display area, and the edge areas on both sides of the organic film layer 2 are packaging areas; the heat-insulating film layer 5 is coated on the second inorganic film layer 7;

[0021] In the internal display area, a semiconductor 102 is provided in the second inorganic film layer 7 and a metal wire 103 is provided in the first inorganic film layer 6 ; in the packaging area on both sides of the organic film layer 21 , metal wires 103 are provided in both the second inorganic film layer 7 and the first inorganic film layer 6 .

[0022] Specifically, the light-emitting layer 1 is an OLED organic light-emitting region.

[0023] Specifically, the new inorganic film layer 4 is a passivation layer. Since the inorganic film layer is in contact with the Frit glue 3 before the improvement, it is necessary to ensure that after adding the thermal insulation film layer 5, the Frit glue 3 is still in contact with the inorganic film layer.

[0024] Specifically, the thermal insulation film layer 5 uses a polyimide film layer as a substrate, and micro-nano ceramic materials are the main force of thermal insulation, which are doped on the polyimide film substrate. That is: a layer of inorganic film layer of silicon oxide is added to the packaging area where the Frit frame glue contacts the TFT device, and another layer of thermal insulation film layer is added under the newly added inorganic film layer: it is composed of high-temperature resistant and extremely stable micro-nano ceramic fiber materials (such as: SiO2-ZrO2 micro-nano ceramic fibers, refer to CN202010101381.8 A high-temperature, high-strength flexible zirconium oxide-silicon oxide fiber film and its preparation method and application) doped on the polyimide film layer substrate, and the thermal insulation film layer can effectively block infrared lasers.

[0025] The specific preparation is as follows:

[0026] (1) TFT substrate glass 100 & Frit cover glass 101: rigid glass, thickness 0.3-0.4 mm;

[0027] (2) Semiconductor 102: IGZO indium gallium zinc oxide, prepared by direct current sputtering;

[0028] Metal wire 103: a composition of metal molybdenum and aluminum, prepared by direct current sputtering;

[0029] (3) Organic film layer 2: a flat layer made of organic OC material with a thickness of about 3.0 μm, prepared by coating method;

[0030] The first inorganic film layer 6: an electrode insulating layer and an etching stop layer, a silicon oxide, with a thickness of about 0.3 μm, prepared by PECVD;

[0031] The second inorganic film layer 7: a passivation layer, a silicon oxide, with a thickness of about 0.2 μm, prepared by PECVD;

[0032] (4) OLED organic light-emitting area 1: an organic material light-emitting area formed by vapor deposition, with a thickness of about 0.4 μm, prepared by vapor deposition;

[0033] (5) Thermal insulation film layer 5: First, a polyimide film layer is prepared as a substrate by a coating method, and then a micro-nano ceramic fiber material (such as SiO2-ZrO2 micro-nano ceramic fiber) is uniformly doped onto the polyimide film layer substrate by a coating method to form a thermal insulation film layer structure. The total thickness of the thermal insulation film layer is about 2 μm, which can isolate part of the heat of the infrared laser (emitted by the infrared laser transmitter 200) and reflect it back, thereby reducing the heat reaching the metal wire area below; the reflected heat can also indirectly improve the Frit welding effect;

[0034] (6) New inorganic film layer 4 (passivation layer): silicon oxide, with a thickness of about 0.2 μm, mainly plays a passivation role, and is prepared by PECVD;

[0035] (7) Frit glue 3: a mixture of resin compounds, ceramics, and metals, with a height of about 4 to 6 μm, prepared by screen transfer.

[0036] Although the specific implementation methods of the present invention are described above, those skilled in the art should understand that the specific embodiments described are only illustrative and are not intended to limit the scope of the present invention. Equivalent modifications and changes made by those skilled in the art in accordance with the spirit of the present invention should be included in the scope of protection of the claims of the present invention.

Claims

1. An OLED film structure for preventing metal wires from being burned during Frit welding, comprising, from top to bottom, a light-emitting layer located between a glass substrate and a glass cover plate, an organic film layer, and several inorganic film layers stacked thereunder; the Frit glue on both sides of the organic film layer divides the panel into an internal display area and packaging areas on both sides; the characteristics are: New inorganic film layers and heat-insulating film layers are sequentially added to the packaging area below the Frit glue.

2. The OLED film structure for preventing metal wire burns during Frit welding according to claim 1, characterized in that: The thermal insulation film layer comprises a substrate and a nanofiber film layer covering the substrate.

3. The OLED film structure for preventing metal wire burns during Frit welding according to claim 2, characterized in that: The substrate is a polyimide film layer.

4. The OLED film structure for preventing metal wire burns during Frit welding according to claim 2, characterized in that: The nanofiber membrane layer is a zirconium oxide-silicon oxide fiber membrane layer.

5. The OLED film structure for preventing metal wire burns during Frit welding according to claim 1, characterized in that: The plurality of inorganic film layers include, from bottom to top, a first inorganic film layer and a second inorganic film layer.

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