Semiconductor light emitting device and semiconductor laser

Abstract

The utility model provides a semiconductor luminescent device and a semiconductor laser. The semiconductor light-emitting device comprises a substrate, a semiconductor light source, a light-condensing optical device and a fluorescent sheet, wherein the substrate comprises a bottom and an annular part on the upper surface of the bottom, the bottom and the annular part form a bowl cup cavity with an opening in one end, and the semiconductor light source is arranged on the upper surface of the bottom; the lower surface of the light condensing optical device is arranged at the opening end of the bowl cup cavity and is provided with at least one light condensing area, the light condensing areas are located at the positions where light beams emitted by the semiconductor light source irradiate the lower surface of the light condensing optical device, and the lower surface of the fluorescent sheet is arranged on the upper surface of the light condensing optical device and at least covers the light condensing areas; light beams emitted by the semiconductor light source are converged through the light-condensing optical device, enter the fluorescent sheet in parallel and excite the fluorescent sheet to emit light. The semiconductor light-emitting device and the semiconductor laser can avoid damage of the fluorescent sheet caused by concentration of emitted light.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor devices and packaging, and in particular relates to a semiconductor light-emitting device and a semiconductor laser. Background Art

[0002] Due to the excellent characteristics of semiconductor lasers (LDs), such as good monochromaticity, small size, long life, high power density and high-speed operation, semiconductor lasers have been widely used in laser ranging, laser radar, laser communication, laser simulation weapons, automatic control, testing instruments and even medical cosmetology.

[0003] At present, the white light laser on the market is generally formed by the blue edge-emitting LD laser chip stimulating the phosphor sheet to form white light. The blue edge-emitting LD laser chip is placed on a vertical platform to emit light vertically, and the phosphor sheet is installed on the top of the vertical platform for the emitted laser to illuminate.

[0004] However, due to the above installation method of the fluorescent sheet and the LD laser chip, firstly, the light from the LD laser chip to the fluorescent sheet is highly concentrated and has high energy. Long-term exposure will damage the fluorescent sheet, resulting in failure of white light. Secondly, the fluorescent sheet is built into the top of the vertical platform installed in the bowl cavity, and the light-emitting angle is limited. In order to increase the light-emitting angle, a micro-array lens needs to be added. However, due to the small size of the fluorescent sheet, a precision micro-array lens needs to be used, which increases the cost. In addition, setting up a vertical platform also increases material costs. Utility Model Content

[0005] The purpose of the utility model is to provide a semiconductor light emitting device and a semiconductor laser to solve the problems existing in the above-mentioned background technology.

[0006] In a first aspect, the utility model provides a semiconductor light-emitting device, including a substrate, a semiconductor light source, a focusing optical device and a fluorescent sheet.

[0007] Among them, the substrate includes a bottom and an annular portion located on the upper surface of the bottom, the bottom and the annular portion surround a bowl-cup cavity with an open end, and a semiconductor light source is arranged on the upper surface of the bottom; the lower surface of the focusing optical device is arranged at the open end of the bowl-cup cavity, and has at least one focusing area, and the focusing area is located at the position where the light beam emitted by the semiconductor light source irradiates the lower surface of the focusing optical device; the lower surface of the fluorescent sheet is arranged on the upper surface of the focusing optical device and at least covers the focusing area; the light beam emitted by the semiconductor light source is converged through the focusing optical device, and is incident on the fluorescent sheet in parallel and excites the fluorescent sheet to emit light.

[0008] In a second aspect, the utility model provides a semiconductor laser, comprising the above-mentioned semiconductor light-emitting device and a circuit board, wherein the semiconductor light-emitting device is soldered on the circuit board.

[0009] Compared with the prior art, the beneficial effects of the utility model include at least:

[0010] The utility model arranges a focusing optical device so that the distance between the fluorescent sheet and the semiconductor light source can be adjusted. The light emitted by the semiconductor light source diverges naturally and then enters the fluorescent sheet in parallel, which is not restricted by the vertical platform and the installation space, thereby avoiding damage to the fluorescent sheet due to concentrated light and avoiding the situation where the white light fails due to damage to the fluorescent sheet.

[0011] The utility model arranges a focusing optical device so that the fluorescent sheet is installed on the focusing device outside the cup cavity. The distance between the fluorescent sheet and the semiconductor light source is increased, the light-emitting angle is not limited by the height of the cup cavity, and there is no need to install a micro-array lens, thus overcoming technical limitations and reducing costs.

[0012] The utility model increases the brightness and clarity of transmitted light by coating an anti-reflection film on a focusing optical device, reduces reflection and scattering, reduces reflection of white light on a fluorescent sheet, and improves light efficiency.

[0013] Furthermore, the utility model changes the vertical light emission mode of the semiconductor laser chip by setting a beam deflector, and does not need to set a vertical platform, thereby simplifying the structure and reducing the packaging difficulty and cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0015] Figure 1 It is a schematic diagram of the composition structure of an existing semiconductor light-emitting device;

[0016] Figure 2 The schematic diagram of the composition structure and optical path of the semiconductor light emitting device of the first embodiment of the utility model;

[0017] Figure 3 It is a schematic diagram of the optical path of a semiconductor light-emitting device of a flat optical device;

[0018] Figure 4 This is a schematic diagram of the composition structure of another semiconductor light emitting device according to the first embodiment of the utility model;

[0019] Figure 5This is a schematic structural diagram of a semiconductor light source of a semiconductor light emitting device according to a second embodiment of the present utility model;

[0020] Figure 6 A bottom view of a semiconductor light emitting device focusing optical device according to a second embodiment of the utility model;

[0021] Figure 7 This is a schematic diagram of the structure of a semiconductor light source of a semiconductor laser according to Embodiment 3 of the present utility model;

[0022] Figure 8 A bottom view of a semiconductor light emitting device focusing optical device according to Embodiment 3 of the present utility model;

[0023] Fig. 9 This is a schematic diagram of the structure of a semiconductor laser according to a fourth embodiment of the utility model.

[0024] Reference numerals:

[0025] 101, glass, 102, bowl-cup type packaging substrate, 103, first metal electrode, 104, bowl-cup cavity, 105, vertical platform, 106, second metal electrode, 107, LD laser chip, 108, ceramic phosphor sheet;

[0026] 201, substrate, 201a, bottom, 201b, annular portion, 201c, bowl cavity, 201d, first electrical connection area, 201e, second electrical connection area, 201f, metal via, 202, semiconductor light source, 202a, semiconductor laser chip, 202b, beam deflector, 202b1, first beam deflector, 202b2, second beam deflector, 203, first electrode, 204, second electrode, 205, focusing optical device, 205a, focusing area, 206, fluorescent sheet, 207, transition heat sink, 207a, first edge, 207b, second edge, 208, anti-reflection film, A, first direction, B, second direction;

[0027] 301. Circuit board. 302. Semiconductor light emitting device. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0029] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0030] like Figure 1 As shown, the existing semiconductor light-emitting device includes glass 101, a bowl-cup type package substrate 102, a first metal electrode 103, a bowl-cup cavity 104, a vertical platform 105, a second metal electrode 106, an LD laser chip 107, and a fluorescent sheet 108. The blue light edge-emitting LD laser chip 106 excites the fluorescent sheet 101 to form white light, and the blue light edge-emitting LD laser chip 106 is vertically attached to the vertical platform 105 vertical to the bowl-cup cavity 104 to achieve vertical light emission, and the fluorescent sheet 108 is installed on the top of the vertical platform 105 for laser irradiation.

[0031] However, firstly, due to the height limitation of the bowl-cup cavity 104 and the vertical platform 105, the distance between the LD laser chip 107 and the fluorescent sheet 108 is relatively short. The light from the LD laser chip 107 to the fluorescent sheet is highly concentrated and has high energy. Long-term exposure will damage the fluorescent sheet and cause the white light to fail. Secondly, the fluorescent sheet 108 is built into the top of the vertical platform 105 installed in the bowl-cup cavity 104. The light-emitting angle is limited by the height of the bowl-cup cavity 104. In order to increase the light-emitting angle, a micro-array lens needs to be added. However, due to the small size of the fluorescent sheet, a precision micro-array lens needs to be used, which will increase the cost. In addition, the vertical platform 105 also increases the material cost.

[0032] In order to solve the problems existing in the background technology and the above-mentioned prior art, a semiconductor light-emitting device is provided in an embodiment of the utility model, including: a substrate, a semiconductor light source, a focusing optical device and a fluorescent sheet; wherein the substrate includes a bottom and an annular portion located on the upper surface of the bottom, the bottom and the annular portion form a bowl-cup cavity with an opening at one end, and the upper surface of the bottom is provided with a semiconductor light source; the lower surface of the focusing optical device is arranged at the open end of the bowl-cup cavity, and has at least one focusing area, and the focusing area is located at the position where the light beam emitted by the semiconductor light source irradiates the lower surface of the focusing optical device; the lower surface of the fluorescent sheet is arranged on the upper surface of the focusing optical device, and at least covers the focusing area; the light beam emitted by the semiconductor light source is converged through the focusing optical device, and is incident on the fluorescent sheet in parallel and excites the fluorescent sheet to emit light.

[0033] Therefore, due to the provision of a focusing optical device, the distance between the fluorescent sheet and the semiconductor light source can be adjusted. The light from the semiconductor light source diverges naturally and then converges into parallel light and enters the fluorescent sheet. It is not restricted by the vertical platform and the installation space of the bowl and cup cavity, thus avoiding damage to the fluorescent sheet due to concentrated light and avoiding the failure of white light.

[0034] Optionally, the focusing optical device is made of a light-transmitting material, the focusing area is formed as a convex lens, and the number of the convex lenses is equal to the number of light beams emitted by the semiconductor light source.

[0035] Optionally, an anti-reflection film is further included, and the anti-reflection film at least covers the focusing area of ​​the lower surface of the focusing optical device.

[0036] Thus, the anti-reflection film controls the interference phenomenon of light, so that light of a specific wavelength can pass through the film more effectively, while light of other wavelengths is reflected or absorbed. The utility model increases the brightness and clarity of the transmitted light by coating the anti-reflection film on the focusing optical device, while reducing reflection and scattering, thereby improving the light efficiency.

[0037] According to the working principle of the anti-reflection film, part of the light is reflected when it reaches the upper surface of the film, and part is reflected again when it reaches the lower surface. There is an optical path difference between the two beams of light. When this optical path difference reaches an integer multiple of 1 / 2 of the wavelength of the light, the two beams of light interfere with each other, which can eliminate the light of this wavelength very well. Therefore, the thickness of the anti-reflection film needs to satisfy (2k+1)λ / 4n, where λ is the wavelength, n is the refractive index of the lens, and k is an integer greater than or equal to 0. When k=0, the minimum thickness of the anti-reflection film is λ / 4n.

[0038] Optionally, the antireflection film covers the entire lower surface of the focusing optical device.

[0039] Optionally, the anti-reflection film covers the entire lower surface and at least a portion of the side surfaces of the focusing optical device.

[0040] Optionally, the anti-reflection film includes a metal oxide anti-reflection material layer and / or a non-metal oxide anti-reflection material layer.

[0041] Optionally, the metal oxide anti-reflection material layer includes any one of tantalum oxide, niobium oxide, tin oxide and aluminum oxide, or a mixture of any two or more thereof.

[0042] Optionally, the non-metal oxide anti-reflection material layer is a silicon dioxide layer.

[0043] Optionally, the semiconductor light source includes at least one semiconductor laser chip and at least one beam deflector; the light emitting direction of the semiconductor laser chip is parallel to the upper surface of the bottom; the beam deflector is arranged on the upper surface of the bottom and is located on the light emitting side of the semiconductor laser chip, and is used to deflect the laser beam emitted by the semiconductor laser chip so as to irradiate the focusing area of ​​the focusing optical device.

[0044] Therefore, by setting a beam deflector, the vertical light emitting mode of the semiconductor laser chip is changed, and there is no need to set a vertical platform, which simplifies the structure and reduces the packaging difficulty and cost.

[0045] Optionally, the number of the semiconductor laser cores is greater than or equal to two.

[0046] Optionally, all the semiconductor laser chips are arranged into at least n groups of semiconductor laser chip installation queues on the upper surface of the bottom, n is a positive integer and n≥1, the n groups of semiconductor laser chip installation queues are parallel to each other, and each group of the semiconductor laser chip installation queues includes a first arrangement and a second arrangement that are parallel to each other; the semiconductor laser chips in the first arrangement and the semiconductor laser chips in the second arrangement are staggered and spaced; the first arrangement and the second arrangement each include at least one semiconductor laser chip; the light emitting directions of the semiconductor laser chips in the first arrangement are parallel to each other and the light emitting sides are all facing the first direction; the light emitting directions of the semiconductor laser chips in the second arrangement are parallel to each other and the light emitting sides are all facing the second direction; the first direction and the second direction are directed in different directions; The first beam deflector is arranged on the light-emitting side of the semiconductor laser chips in the first arrangement, for simultaneously changing the directions of the laser beams emitted by the plurality of semiconductor laser chips in the first arrangement; the second beam deflector is arranged on the light-emitting side of the semiconductor laser chips in the second arrangement, for simultaneously changing the directions of the laser beams emitted by the plurality of semiconductor laser chips in the second arrangement; the focusing areas on the focusing optical device are arranged into m groups of focusing area queues, m=n, each group of focusing area queues includes a first column of focusing areas and a second column of focusing areas; the i-th group of focusing area queues is located above the i-th group of semiconductor laser chip installation queues, i=1, 2, ..., m, the first column of focusing areas is located above the first beam deflector, and the second column of focusing areas is located above the second beam deflector;

[0047] Optionally, all the semiconductor laser chips are arranged into at least n groups of semiconductor laser chip installation queues in the bottom, n is a positive integer and n≥1, each group of the semiconductor laser chip installation queues are parallel to each other, and each group of the semiconductor laser chip installation queues only includes a single row; the light emission directions of the semiconductor laser chips in the single row are parallel to each other; the first beam deflector is arranged on the light emission side of the semiconductor laser chips in the single row, for simultaneously changing the directions of the laser beams emitted by multiple semiconductor laser chips in the single row; the focusing areas on the focusing optical device are arranged into m groups of focusing area queues, m=n, and each group of focusing area queues includes a single row of focusing areas; the i-th group of single row of focusing areas is located above the i-th group of semiconductor laser chip installation queues, i=1, 2,..., m, and the single row of focusing areas is located above the first beam deflector.

[0048] The utility model also provides a semiconductor laser, comprising a circuit board and at least one semiconductor light emitting device, wherein the semiconductor light emitting device is welded on the circuit board.

[0049] Embodiment 1

[0050] This embodiment provides a semiconductor light emitting device, such as Figure 2 As shown, it includes: a substrate 201, a semiconductor light source 202, a focusing optical device 205 and a fluorescent sheet 206; wherein the substrate 201 includes a bottom 201a and an annular portion 201b located on the upper surface of the bottom 201a, the bottom 201a and the annular portion 201b form a bowl-cup cavity 201c with an open end, the annular portion 201b is not limited to the square shape shown in the figure, and can also be circular, elliptical or other shapes, and a semiconductor light source 202 is arranged on the upper surface of the bottom 201a; the focusing optical device 205 is arranged on the upper surface of the bottom 201a; and the fluorescent sheet 206 is arranged on the upper surface of the bottom 201a. The lower surface of 5 is arranged at the open end of the bowl cup cavity 201c, and has at least one focusing area 205a, the focusing area 205a is located at the position where the light beam emitted by the semiconductor light source 202 irradiates the lower surface of the focusing optical device 205, the lower surface of the fluorescent sheet 206 is arranged on the upper surface of the focusing optical device 205, and at least covers the focusing area 205a; the light beam emitted by the semiconductor light source is converged through the focusing optical device 205, and is parallelly incident on the fluorescent sheet 206 and excites the fluorescent sheet to emit light.

[0051] The first electrode 203 and the second electrode 204 arranged on the lower surface of the substrate 201 are connected to the first electrical connection area 201d and the second electrical connection area 201f inside the bowl cavity 201c through the via hole 201f inside the substrate 201, and the first electrical connection area 201d and the second electrical connection area 201f are respectively connected to the semiconductor light source 202, so that the external power supply can power the semiconductor light source 202.

[0052] like Figure 2 As shown, the utility model, by setting a focusing optical device, makes the distance between the fluorescent sheet 206 and the semiconductor light source 202 adjustable on the one hand, and the light emitted by the semiconductor light source 202 is naturally divergent and then converged and parallelly incident on the fluorescent sheet 206, which is not limited by the vertical platform and the installation space of the bowl-cup cavity. The light incident on the fluorescent sheet 206 is evenly dispersed, avoiding the situation where the white light fails. On the other hand, the fluorescent sheet 206 is installed on the focusing device 205 outside the bowl-cup cavity, the distance between the fluorescent sheet 206 and the semiconductor light source 202 is increased, and the light-emitting angle is not limited by the height of the bowl-cup cavity 201c, and there is no need to install a micro-array lens, which overcomes the technical condition limitation and reduces the cost.

[0053] Figure 3 A schematic diagram of the optical path of a semiconductor light-emitting device using a flat optical device is given. Figure 3 In FIG. 2 , light emitted from the semiconductor light source 202 is reflected at the interface between the flat optical device and the fluorescent sheet. Figure 2 and Figure 3 Since the focusing optical device 205 is provided in the present invention, the light emitted by the semiconductor light source 202 is focused by the focusing optical device 205 and is incident on the fluorescent sheet 206 in parallel, with less light loss and high efficiency.

[0054] In some embodiments of the present invention, optionally, the focusing optical device 205 is made of a light-transmitting material, the focusing area 205a is a convex lens, and the number of the convex lenses is equal to the number of light beams emitted by the semiconductor light source.

[0055] In order to further reduce light loss and improve efficiency, in some embodiments of the present invention, the semiconductor light emitting device further includes an anti-reflection film 208, which is at least disposed at the light-collecting region 205a on the lower surface of the light-collecting optical device 205. In some other embodiments, the anti-reflection film 208 covers the entire lower surface of the light-collecting optical device 205. In some other embodiments, the anti-reflection film 208 covers the entire lower surface and at least part of the side surface of the light-collecting optical device 205.

[0056] The anti-reflection film 208 includes a metal oxide anti-reflection material layer and / or a non-metal oxide anti-reflection material layer. Preferably, the metal oxide anti-reflection material is any one or a mixture of any of tantalum oxide, niobium oxide, tin oxide and aluminum oxide, and the non-metal oxide anti-reflection material can be silicon dioxide. By setting the anti-reflection film 208, when the light passes through the focusing area and is emitted to the fluorescent sheet, the focusing area will no longer reflect the light, thereby maximizing the light effect. The selection of the anti-reflection film is usually based on the required optical properties. Metal oxides such as tantalum oxide, niobium oxide, tin oxide and aluminum oxide and non-metal oxides such as silicon dioxide are usually used to manufacture anti-reflection films. They can selectively increase the transmission of specific wavelengths and reduce reflection by controlling the thickness and properties of the film. Using the anti-reflection film 208 to control the propagation path of light in the optical system to maximize the light effect requires precise design and material selection to ensure that the light is emitted into the fluorescent sheet as parallel as possible by the focusing area, thereby improving the optical performance.

[0057] Furthermore, in order to increase the distance between the fluorescent sheet 206 and the semiconductor light source 202 in the limited cup cavity, as shown in FIG. Figure 4 As shown, the semiconductor light source 202 of the semiconductor light emitting device in the embodiment of the present invention includes at least one semiconductor laser chip 202a and at least one beam deflector 202b; the light emitting direction of the semiconductor laser chip 202a is parallel to the upper surface of the bottom 201a; the beam deflector 202b is arranged on the upper surface of the bottom 201a and located on the light emitting side of the semiconductor laser chip 202, and is used to deflect the laser beam emitted by the semiconductor laser chip 202 so as to irradiate the focusing area of ​​the focusing optical device 205. By setting the beam deflector 202b, the vertical light emitting mode of the semiconductor laser chip 202a is changed, and there is no need to set a vertical platform, which simplifies the structure and reduces the packaging difficulty and cost.

[0058] Embodiment 2

[0059] This embodiment provides a semiconductor light emitting device, wherein the number of semiconductor laser chips 202a is greater than or equal to two.

[0060] Specifically, Figure 5As shown, all semiconductor laser chips 202a are arranged into at least n groups of semiconductor laser chip installation queues on the upper surface of the bottom 201a, n is a positive integer and n≥1, the n groups of semiconductor laser chip installation queues are parallel to each other, and each group of the semiconductor laser chip installation queues includes a first arrangement d1 and a second arrangement d2; the first arrangement and the second arrangement are parallel; the first arrangement and the second arrangement respectively include at least one semiconductor laser chip 202a; the light emitting directions of the semiconductor laser chips 202a in the first arrangement are parallel to each other and the light emitting sides are all facing the first direction A; the light emitting directions of the semiconductor laser chips 202a in the second arrangement are parallel to each other and the light emitting sides are all facing the second direction B, and the second direction B is opposite to the first direction A; the semiconductor laser chips 202a in the first arrangement and the semiconductor laser chips 202a in the second arrangement are staggered and distributed.

[0061] The semiconductor laser chips 202a in the first arrangement and the semiconductor laser chips 202a in the second arrangement in each group of semiconductor laser chip installation queues are fixed to the upper surface of the same transition heat sink 207, the lower surface of the transition heat sink 207 is fixed to the upper surface of the bottom 201b, and the transition heat sink 207 has a first edge 207a in the first direction A and a second edge 207b in the second direction B. One end of the light-emitting side of the semiconductor laser chips 202a in the first arrangement exceeds the first edge 207a of the transition heat sink 207 by a predetermined length; one end of the light-emitting side of the semiconductor laser chips 202 in the second arrangement exceeds the second edge 207b of the transition heat sink 207 by a predetermined length.

[0062] The semiconductor laser chip installation queue includes the beam deflector 202b, and each group of the semiconductor laser chip installation queue has two beam deflectors 202b, which are a first strip-shaped beam deflector 202b1 and a second strip-shaped beam deflector 202b2; the first beam deflector 202b1 is arranged on the light-emitting side of the semiconductor laser chips 202 in the first arrangement, and is used to simultaneously change the directions of the laser beams emitted by multiple semiconductor laser chips 202 in the first arrangement; the second beam deflector 202b2 is arranged on the light-emitting side of the semiconductor laser chips 202 in the second arrangement, and is used to simultaneously change the directions of the laser beams emitted by multiple semiconductor laser chips 202 in the second arrangement.

[0063] Corresponding to the semiconductor laser chip installation queue, such as Figure 6As shown, the focusing areas 205a on the focusing optical device 205 are arranged into m groups of focusing area queues, m=n, each group of focusing area queues includes a first column of focusing areas and a second column of focusing areas; the i-th group of focusing area queues is located above the i-th group of semiconductor laser chip installation queues, i=1, 2, ..., m, the first column of focusing areas is located above the first beam deflector 202b1, and the second column of focusing areas is located above the second beam deflector 202b2.

[0064] Through the above-mentioned structural setting, different numbers of semiconductor laser chips can be set to meet different light intensity requirements and manufacture semiconductor light-emitting devices with different powers. Secondly, the installation queues of two semiconductor laser chips are conducive to uniform light in all directions. In addition, in this embodiment, the semiconductor light-emitting device substrate 201 is square, which is convenient for forming a semiconductor light-emitting device array and providing more flexible lighting options.

[0065] Embodiment 3

[0066] This embodiment provides a semiconductor light emitting device, such as Figure 7 As shown, specifically, all the semiconductor laser chips 202a are arranged into at least n groups of semiconductor laser chip installation queues in the bottom 201a, n is a positive integer and n≥1, each group of the semiconductor laser chip installation queues are parallel to each other, and each group of the semiconductor laser chip installation queues only includes a single arrangement d3; the light emitting directions of the semiconductor laser chips 202a in the single arrangement are parallel to each other and the light emitting sides are all facing the first direction A.

[0067] All the semiconductor laser chips 202a of the single array in each group of the semiconductor laser chip mounting arrays including only the single array are fixed to the upper surface of the same transition heat sink 207, the lower surface of the transition heat sink 207 is fixed to the upper surface of the bottom 201a, and the transition heat sink 207 has a first edge 207a in the first direction A. One end of the light-emitting side of the semiconductor laser chip 202 in the single array exceeds the first edge 207a of the transition heat sink 207 by a predetermined length.

[0068] The semiconductor laser chip installation queue that only includes the single arrangement includes the beam deflector 202b; the number of the beam deflector 202b in the single group of semiconductor laser chip 202a installation queue is one, which is a long strip-shaped first beam deflector 202b1; the first beam deflector 202b1 is arranged on the light-emitting side of the semiconductor laser chip 202 in the single arrangement, and is used to simultaneously change the directions of the laser beams emitted by multiple semiconductor laser chips 202a in the single arrangement.

[0069] like Figure 8As shown, the focusing areas 205a on the focusing optical device 205 are arranged into m groups of focusing area queues, m=n, and each group of focusing area queues includes a single row of focusing areas; the i-th group of single row of focusing areas is located above the i-th group of semiconductor laser chip installation queues, i=1, 2, ..., m, and the single row of focusing areas is located above the first beam deflector 202b1.

[0070] The difference from the second embodiment is that each group of semiconductor laser chip mounting queues only includes a single arrangement, while the semiconductor laser chip mounting queues in the second embodiment include a first arrangement and a second arrangement.

[0071] Through the above-mentioned structural arrangement, this embodiment realizes a conductor laser chip different from that of the second embodiment, and can also meet different illumination intensity requirements by setting different numbers of semiconductor laser chips to manufacture semiconductor light-emitting devices of different powers. Similarly, in this embodiment, the semiconductor light-emitting device substrate 201 is square, which is convenient for forming a semiconductor light-emitting device array and providing more flexible lighting options.

[0072] Embodiment 4

[0073] This embodiment provides a semiconductor laser, such as Fig. 9 As shown, a semiconductor laser is also provided, comprising the semiconductor light-emitting device in the aforementioned solution, and also comprising a circuit board 301 , on which the semiconductor light-emitting device 302 is soldered.

[0074] The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A semiconductor light emitting device, characterized in that: include: A substrate (201), a semiconductor light source (202), a focusing optical device (205) and a fluorescent sheet (206); wherein: The substrate (201) comprises a bottom (201a) and an annular portion (201b) located on the upper surface of the bottom (201a); the bottom (201a) and the annular portion (201b) enclose a bowl-cup cavity (201c) with an open end; and a semiconductor light source (202) is disposed on the upper surface of the bottom (201a); The lower surface of the light-collecting optical device (205) is arranged at the open end of the bowl-cup cavity (201c), and has at least one light-collecting area (205a), wherein the light-collecting area (205a) is located at a position where the light beam emitted by the semiconductor light source (202) irradiates the lower surface of the light-collecting optical device (205); The lower surface of the fluorescent sheet (206) is arranged on the upper surface of the light-collecting optical device (205) and at least covers the light-collecting area (205a); The light beam emitted by the semiconductor light source (202) is converged by the focusing optical device (205), and is incident in parallel on the fluorescent sheet (206) to stimulate the fluorescent sheet to emit light.

2. The semiconductor light emitting device according to claim 1, characterized in that: The light-collecting optical device (205) is made of a light-transmitting material, the light-collecting area (205a) is formed as a convex lens, and the number of the convex lenses is equal to the number of light beams emitted by the semiconductor light source (202).

3. The semiconductor light emitting device according to claim 1 or 2, characterized in that: It also includes an anti-reflection film (208), which at least covers the light-collecting area (205a) on the lower surface of the light-collecting optical device (205).

4. The semiconductor light emitting device according to claim 3, characterized in that: The anti-reflection film (208) covers the entire lower surface of the focusing optical device (205).

5. The semiconductor light emitting device according to claim 3, characterized in that: The anti-reflection film (208) covers the entire lower surface and at least a portion of the side surface of the focusing optical device (205).

6. The semiconductor light emitting device according to claim 3, characterized in that: The anti-reflection film (208) includes a metal oxide anti-reflection material layer and / or a non-metal oxide anti-reflection material layer.

7. The semiconductor light emitting device according to claim 6, characterized in that: The metal oxide anti-reflection material layer includes any one of tantalum oxide, niobium oxide, tin oxide and aluminum oxide, or a mixture of any two or more thereof; the non-metal oxide anti-reflection material layer is a silicon dioxide layer.

8. The semiconductor light emitting device according to claim 2, characterized in that: The semiconductor light source (202) comprises at least one semiconductor laser chip (202a) and at least one beam deflector (202b); The light emitting direction of the semiconductor laser chip (202a) is parallel to the upper surface of the bottom (201a); The beam deflector (202b) is arranged on the upper surface of the bottom (201a) and is located on the light emitting side of the semiconductor laser chip (202a).

9. The semiconductor light emitting device according to claim 8, characterized in that: The number of the semiconductor laser chips (202a) is greater than or equal to two; wherein all the semiconductor laser chips (202a) are arranged on the upper surface of the bottom (201a) into at least n groups of semiconductor laser chip installation queues, n is a positive integer and n≥1, the n groups of semiconductor laser chip installation queues are parallel to each other, and each group of the semiconductor laser chip installation queues includes a first arrangement and a second arrangement that are parallel to each other.

10. The semiconductor light emitting device according to claim 9, characterized in that: The first arrangement and the second arrangement each include at least one semiconductor laser chip (202a); The semiconductor laser chips (202a) in the first arrangement and the semiconductor laser chips (202a) in the second arrangement are arranged in a staggered manner; The light emitting directions of the semiconductor laser chips (202a) in the first arrangement are parallel to each other and the light emitting sides are all facing the first direction; The light emitting directions of the semiconductor laser chips (202a) in the second arrangement are parallel to each other and the light emitting sides are all facing the second direction; The first direction and the second direction have different directions; A first beam deflector (202b1) is provided on the light-emitting side of the semiconductor laser chips (202a) in the first arrangement; A second beam deflector (202b2) is provided on the light-emitting side of the semiconductor laser chips (202a) in the second arrangement.

11. The semiconductor light emitting device according to claim 10, characterized in that: The focusing areas (205a) on the focusing optical device (205) are arranged into m groups of focusing area queues, m=n, each group of focusing area queues includes a first column of focusing areas and a second column of focusing areas; the i-th group of focusing area queues is located above the i-th group of semiconductor laser chip installation queues, i=1, 2, ..., m, the first column of focusing areas is located above the first beam deflector (202b1), and the second column of focusing areas is located above the second beam deflector (202b2).

12. The semiconductor light emitting device according to claim 8, characterized in that: All the semiconductor laser chips (202a) are arranged in the bottom (201a) into at least n groups of semiconductor laser chip installation queues, n is a positive integer and n≥1, each group of the semiconductor laser chip installation queues are parallel to each other, and each group of the semiconductor laser chip installation queues only includes a single arrangement.

13. The semiconductor light emitting device according to claim 12, characterized in that: The light emitting directions of the semiconductor laser chips (202a) in the single array are parallel to each other; the light beam deflector (202b) is arranged on the light emitting side of the semiconductor laser chips (202a) in the single array; the light focusing areas (205a) on the light focusing optical device (205) are arranged into m groups of light focusing area queues, m=n, each group of light focusing area queues includes single-row light focusing areas; the i-th group of single-row light focusing areas is located above the i-th group of semiconductor laser chip installation queues, i=1, 2, ..., m, and the single-row light focusing areas are located above the light beam deflector (202b).

14. A semiconductor laser, characterized in that: include: At least one semiconductor light emitting device according to any one of claims 1 to 13; A circuit board (301), wherein the semiconductor light emitting device is soldered on the circuit board (301).

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