Vapor deposition synthesis growth preparation device for vacuum atmosphere purification glove box

By designing a vacuum air atmosphere purification glove box vapor deposition synthesis and growth preparation device, the direct transfer and movement of materials are achieved using quartz tubes and magnetic push components, solving the problems of cumbersome material transfer and oxidative deterioration in the prior art, and improving the preparation efficiency.

CN222540866UActive Publication Date: 2025-02-28WUHAN SHIWEI OPTOELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202420454311.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-03-07
Publication Date
2025-02-28
Estimated Expiration
2034-03-07

AI Technical Summary

Technical Problem

In the prior art, after chemical vapor deposition, the material needs to be transferred to the glove box through external equipment for subsequent preparation. The process is cumbersome and time-consuming, and the material is prone to oxidation and deterioration when the growth furnace is turned on.

Method used

A vacuum air atmosphere purification glove box vapor deposition synthetic growth preparation device is designed, including a high-temperature growth furnace and glove box main body. The direct transfer and movement of the material is achieved through quartz tubes and magnetic push components to ensure the subsequent preparation of the material in an aqueous and oxygen-free environment.

Benefits of technology

It realizes the direct transfer of the material to the glove box after chemical vapor deposition, simplifies the operation process, saves time, avoids material oxidation and deterioration, and improves the preparation efficiency of material devices.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device which comprises a high-temperature growth furnace and a glove box body, and a quartz tube used for being communicated with the glove box body through a transition bin is arranged in the high-temperature growth furnace. A supporting block is arranged on the other side of the high-temperature growth furnace and is used for supporting the extension part of the quartz tube; a magnetic pushing assembly is arranged on the supporting block and used for controlling the evaporation source or the substrate to move on the placing plate and in the quartz tube inner source crucible and the glove box body. According to the utility model, the material which is synthesized, grown and prepared through chemical vapor deposition can be conveniently and directly transferred into the glove box for subsequent material device preparation process, so that the one-time preparation of material synthesis growth and water-free and oxygen-free protective and stable transfer is realized, the tedious intermediate step of material transfer is avoided, and the production efficiency is improved. The overall operation time is greatly saved, and the preparation efficiency of material devices is improved.
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Description

Technical Field

[0001] The utility model relates to the technical field of material deposition synthesis growth, in particular to a vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device. Background Art

[0002] Chemical vapor deposition is a method for manufacturing high-end semiconductor materials and optoelectronic devices with a high degree of automation, high price and high technical integration. The principle of chemical vapor deposition is that in a tubular high-temperature furnace at a certain temperature, one or more gases input into the system undergo chemical reactions to generate solid substances that are deposited on the surface of the substrate to form a coating or thin film material.

[0003] The vacuum atmosphere purification glove box is a protective operating box that can provide an inert atmosphere without water or oxygen to prevent materials from being oxidized, contaminated, deteriorated, and performance degraded, making it convenient for the grown materials to undergo subsequent material device preparation processes.

[0004] Since the chemical vapor deposition in the prior art needs to be transferred to the glove box through external equipment after the operation process for subsequent material device preparation process, the intermediate steps are cumbersome and greatly waste the time for the generation and preparation of material devices. Moreover, when the growth furnace is turned on, the material is easily oxidized and deteriorated, and its performance deteriorates and fails.

[0005] To this end, the present application specifically proposes a vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device to solve the above-mentioned technical problems, and the above-mentioned content is only used to assist in understanding the technical solution of the present application, and does not represent an admission that the above-mentioned content is the closest prior art. Utility Model Content

[0006] The main purpose of the utility model is to provide a vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device which can directly transfer the material to a glove box for subsequent material device preparation process after the material is prepared by chemical vapor deposition synthesis growth.

[0007] In order to solve the above technical problems, the utility model provides a vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device, comprising a high-temperature growth furnace and a glove box body arranged on one side of the high-temperature growth furnace for the isolation and transfer of deposition synthesis growth materials, wherein a quartz tube for connecting the glove box body through a transition chamber is arranged in the high-temperature growth furnace, and a support block is arranged on the other side of the high-temperature growth furnace for supporting the extended part of the quartz tube;

[0008] The quartz tube is provided with a deposition synthetic growth material through a placement plate for controlling a high-temperature growth furnace to perform a material deposition synthetic growth operation;

[0009] The support block is provided with a magnetic push assembly for controlling the placement plate carrying the evaporation source or substrate to move in the source crucible in the quartz tube and the glove box body.

[0010] Furthermore, a microscopic transfer platform, a glue spreader and a coating apparatus are sequentially arranged in the glove box body in the direction of the quartz tube, and the transition chamber is arranged on the glove box body for transferring the deposited growth material.

[0011] Furthermore, the quartz tube is provided with a track block along the length direction of the quartz tube, a magnetic push moving block which is limitedly slid on the track block and used for controlling the sliding of the magnetic push assembly, and a connecting frame which is provided on the magnetic push moving block and is used for connecting the placement plate.

[0012] Furthermore, the placement plates are arranged in at least two groups, and at least one group of the placement plates is located at the end of the connecting frame, and an arc block for fitting the inner surface of the quartz tube is arranged at the bottom of the placement plates located at the end of the connecting frame.

[0013] Furthermore, the magnetic push assembly includes a fixed bar that passes through the support block up and down and is fixed on the support block along the length direction of the quartz tube, and a magnetic push connection block that slides in the fixed bar along the length direction of the fixed bar, and the fixed bar is provided with a driving member for driving the magnetic push connection block to move in the fixed bar;

[0014] During the movement of the magnetic push connection block, the magnetic push connection block is used to drive the magnetic push moving block to move on the track bar block through magnetic force.

[0015] Furthermore, a limiting slide bar is arranged inside the fixed bar along the length direction, and a limiting groove which is slidably engaged with the limiting slide bar is opened on the magnetic push connection block to limit the movement of the magnetic push connection block in the fixed bar along the length direction of the fixed bar.

[0016] Furthermore, the driving member includes a through slot opened at the bottom of the fixed bar along the length direction of the fixed bar and a sliding block arranged at the bottom of the magnetic push connection block for passing through the through slot and entering under the fixed bar.

[0017] Furthermore, a triangular support frame connected to the high-temperature growth furnace is also provided at the bottom of the fixed bar block, which is used to fix the bar block on one side of the high-temperature growth furnace to stably support the quartz tube.

[0018] The beneficial effects of the utility model are embodied in:

[0019] 1. The utility model sets a quartz tube for connecting to the inside of the glove box body in the high-temperature growth furnace, and controls the internal placement plate to move in the quartz tube and the glove box body through a magnetic push assembly at the extended part of the quartz tube. This facilitates the direct transfer of materials to the glove box for subsequent material device preparation processes after the materials are prepared by chemical vapor deposition synthesis growth, thereby realizing the one-time preparation of material synthesis growth and anhydrous and oxygen-free protection and stability transfer, eliminating the tedious intermediate steps of material transfer, greatly saving the overall operation time, and improving the efficiency of material device preparation.

[0020] 2. The utility model sets a magnetic push assembly, and further controls the movement of the magnetic push moving block in the sealed quartz tube on the track bar through the movement control of the magnetic push connecting block, so as to adjust and control the movement of the placement plate loaded with vapor deposition materials in the quartz tube and the glove box body. It can control the growth of materials in a high-temperature growth furnace or carry out subsequent material device preparation processes in the glove box body while meeting the sealing conditions inside the quartz tube, and is convenient to use. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings constituting part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings:

[0022] Figure 1 It is an overall three-dimensional view of the utility model;

[0023] Figure 2 This is a schematic diagram of the internal structure of the glove box body of the utility model;

[0024] Figure 3 It is a cross-sectional perspective schematic diagram of the internal connection structure of the quartz tube of the utility model;

[0025] Figure 4 It is a three-dimensional schematic diagram of the support block structure of the utility model;

[0026] Figure 5 It is a cross-sectional stereoscopic schematic diagram of the internal connection structure of the support block of the utility model.

[0027] In the figure:

[0028] 1. Glove box body; 11. Microscopic transfer platform; 12. Glue spreader; 13. Coating machine; 14. Transition chamber;

[0029] 2. High temperature growth furnace;

[0030] 3. Quartz tube; 31. Track bar block; 32. Magnetic push moving block; 33. Connecting frame; 34. Placement plate;

[0031] 4. Support block; 41. Triangular support frame; 42. Magnetic push assembly; 421. Fixed bar block; 422. Limiting groove; 423. Limiting slide bar; 424. Magnetic push connecting block; 425. Through groove; 426. Sliding block. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. In the absence of conflict, the embodiments in this application and the features in the embodiments can be combined with each other. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0033] In the embodiment, see Figures 1 to 5 .

[0034] like Figure 1 and Figure 3 As shown, the utility model provides a vacuum atmosphere purification glove box vapor deposition synthetic growth preparation device, including a high-temperature growth furnace 2 and a glove box body 1 arranged on one side of the high-temperature growth furnace 2 for the isolation and transfer of deposition synthetic growth materials, a quartz tube 3 is arranged in the high-temperature growth furnace 2 for connecting the glove box body 1 through a transition chamber 14, and a support block 4 is arranged on the other side of the high-temperature growth furnace 2 for supporting the extended part of the quartz tube 3.

[0035] Specifically, the quartz tube 3 here is placed with deposition synthetic growth materials through the placement plate 34 for the high-temperature growth furnace 2 to control the material deposition synthetic growth operation. At the same time, the glove box body 1 here can be used for the transfer of deposition synthetic growth materials, internal vacuuming, internal interface access to protective atmosphere and other operations. In the overall use process of the quartz tube 3, it has outstanding characteristics such as wide application, strong practicality, low cost, fast and efficient, and strong scalability.

[0036] At this time, a magnetic push assembly 42 is provided on the support block 4 for controlling the evaporation source or substrate used as the deposition synthetic growth material to move on the placement plate 34 and in the source crucible and the glove box body 1 in the quartz tube 3. Therefore, by providing a quartz tube 3 for connecting the inside of the glove box body 1 in the high-temperature growth furnace 2, and controlling the internal placement plate 34 to move in the quartz tube 3 and the glove box body 1 through the magnetic push assembly 42 in the extended part of the quartz tube 3, the material can be conveniently transferred directly to the glove box for subsequent material device preparation process after being prepared by chemical vapor deposition synthetic growth, thereby realizing the one-time preparation of material synthetic growth and anhydrous and oxygen-free protective and stable transfer, eliminating the tedious intermediate steps of material transfer, greatly saving the overall operation time, and improving the material device preparation efficiency.

[0037] At this point, it can be explained that the source of the source crucible is an evaporation source of a certain material or precursor placed in a quartz tube, and the substrate is a base plate on which the final material is deposited, and the material is deposited and grown on the substrate.

[0038] Further, such as Figure 2 As shown, a microscopic transfer platform 11, a glue spreader 12 and a coating apparatus 13 are sequentially arranged in the glove box body 1 toward the quartz tube 3, and the material used for growth undergoes subsequent material device preparation processes in the glove box body 1. At this time, a transition chamber 14 is arranged on the glove box body 1 for the transfer of deposited growth materials.

[0039] Also refer to Figure 3 and Figure 5 The quartz tube 3 is provided with a track bar 31 along the length direction of the quartz tube 3, a magnetic push moving block 32 which is limitedly slid on the track bar 31 and used for the magnetic push assembly 42 to control the sliding, and a connecting frame 33 which is provided on the magnetic push moving block 32 and used for connecting the placement plate 34.

[0040] It should be noted that the placement plates 34 are arranged in at least two groups, and at least one group of placement plates 34 is located at the end of the connecting frame 33 . The bottom of the placement plates 34 located at the end of the connecting frame 33 is provided with an arc block for fitting the inner surface of the quartz tube 3 .

[0041] Furthermore, the magnetic push assembly 42 includes a fixed bar 421 that passes through the support block 4 up and down and is fixed on the support block 4 along the length direction of the quartz tube 3, and a magnetic push connecting block 424 that slides in the fixed bar 421 along the length direction of the fixed bar 421. A driving member is provided on the fixed bar 421 for driving the magnetic push connecting block 424 to move in the fixed bar 421.

[0042] Specifically, during the movement of the magnetic push connection block 424 , the magnetic push connection block 424 can drive the magnetic push moving block 32 to move on the track bar block 31 through magnetic force.

[0043] Therefore, a magnetic push assembly 42 is provided, and the movement of the magnetic push connecting block 424 is controlled by a driving member, so that the magnetic push moving block 32 in the sealed quartz tube 3 can be further controlled to move on the track bar 31, so that the placement plate 34 loaded with vapor deposition materials can be adjusted and controlled to move in the quartz tube 3 and the glove box body 1, and the material growth in the high-temperature growth furnace 2 or the subsequent material device preparation process in the glove box body 1 can be controlled while meeting the internal sealing conditions of the quartz tube 3, which is convenient to use.

[0044] Specifically, a limiting slide bar 423 is arranged inside the fixed bar 421 along the length direction, and a limiting groove 422 is provided on the magnetic push connection block 424, which is slidably engaged with the limiting slide bar 423 and is used to limit the magnetic push connection block 424 to move along the length direction of the fixed bar 421 inside the fixed bar 421.

[0045] Therefore, when the magnetic push connection block 424 slides inside the fixed bar 421, it can be ensured that the moving direction of the magnetic push connection block 424 is a linear direction.

[0046] Specifically, refer to Figure 4 and Figure 5 The driving member includes a through slot 425 opened at the bottom of the fixed bar 421 along the length direction of the fixed bar 421 and a sliding block 426 arranged at the bottom of the magnetic push connecting block 424 for passing through the through slot 425 and entering under the fixed bar 421.

[0047] It should be noted that the drive member may also adopt an electric slide rail structure or a motor screw structure in the prior art as a substitute during actual use to ensure that the magnetic push connection block 424 can be electrically controlled to slide along a straight line inside the fixed bar 421.

[0048] In addition, a triangular support frame 41 connected to the high-temperature growth furnace 2 may be provided at the bottom of the fixed bar 421 to facilitate the fixed bar 421 to stably support the quartz tube 3 on one side of the high-temperature growth furnace 2 .

[0049] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

[0050] In addition, it should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back...), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0051] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the utility model, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the meaning of "and / or" appearing in the full text includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or schemes that A and B meet at the same time. In addition, in the embodiments of the utility model, "multiple" refers to more than two. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the utility model.

Claims

1. A vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device, characterized in that: The invention comprises a high-temperature growth furnace (2) and a glove box body (1) arranged on one side of the high-temperature growth furnace (2) for depositing and isolating growth materials, wherein a quartz tube (3) is arranged in the high-temperature growth furnace (2) for connecting the glove box body (1) through a transition chamber (14), and a support block (4) is arranged on the other side of the high-temperature growth furnace (2) for supporting an extended portion of the quartz tube (3); The quartz tube (3) is provided with a deposition synthetic growth material via a placement plate (34) for controlling the high temperature growth furnace (2) to perform a material deposition synthetic growth operation; The support block (4) is provided with a magnetic push assembly (42) for controlling the placement plate (34) carrying the evaporation source or substrate to move within the source crucible in the quartz tube (3) and the glove box body (1); The quartz tube (3) is provided with a track block (31) along the length direction of the quartz tube (3), a magnetic push moving block (32) which is limitedly slidable on the track block (31) and used for the magnetic push assembly (42) to control the sliding, and a connecting frame (33) which is provided on the magnetic push moving block (32) and is used for connecting the placement plate (34); The magnetic push assembly (42) comprises a fixed bar (421) which passes through the support block (4) vertically and is fixed on the support block (4) along the length direction of the quartz tube (3), and a magnetic push connection block (424) which slides in the fixed bar (421) along the length direction of the fixed bar (421), and a driving member is provided on the fixed bar (421) for driving the magnetic push connection block (424) to move in the fixed bar (421); During the movement of the magnetic push connection block (424), the magnetic push connection block (424) drives the magnetic push moving block (32) to move on the track bar block (31) through magnetic force.

2. The vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device according to claim 1, characterized in that: A microscopic transfer platform (11), a coating machine (12) and a coating apparatus (13) are sequentially arranged in the glove box body (1) in the direction of the quartz tube (3); the transition chamber (14) is arranged on the glove box body (1) and is used for transferring the deposited growth material.

3. The vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device according to claim 1, characterized in that: The placement plates (34) are arranged in at least two groups, and at least one group of the placement plates (34) is located at the end of the connecting frame (33). The bottom of the placement plates (34) located at the end of the connecting frame (33) is provided with an arc-shaped block for fitting against the inner surface of the quartz tube (3).

4. The vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device according to claim 1, characterized in that: A limiting slide bar (423) is arranged inside the fixed bar block (421) along the length direction, and a limiting groove (422) is provided on the magnetic push connection block (424) and is slidably engaged with the limiting slide bar (423) to limit the magnetic push connection block (424) to move inside the fixed bar block (421) along the length direction of the fixed bar block (421).

5. The vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device according to claim 1, characterized in that: The driving member comprises a through slot (425) provided at the bottom of the fixed bar (421) along the length direction of the fixed bar (421) and a sliding block (426) provided at the bottom of the magnetic push connection block (424) for passing through the through slot (425) and entering below the fixed bar (421).

6. The vacuum atmosphere purification glove box vapor deposition synthesis growth preparation device according to claim 1, characterized in that: A triangular support frame (41) connected to the high-temperature growth furnace (2) is also provided at the bottom of the fixed bar block (421) and is used to fix the bar block (421) on one side of the high-temperature growth furnace (2) to stably support the quartz tube (3).