Gas supply system of microwave plasma chemical vapor deposition diamond growth equipment
By designing a gas supply system for diamond growth equipment, the problem of shutdown of traditional equipment when replacing raw gas cylinders is solved, the growth efficiency and quality are improved, and the maintenance process is simplified.
Patent Information
- Application Number
- CN202420847774.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-23
- Publication Date
- 2025-03-07
- Estimated Expiration
- 2034-04-23
AI Technical Summary
Traditional diamond growth equipment needs to be shut down when replacing raw gas cylinders, which affects the growth efficiency and quality of diamonds. At the same time, the scattered gas pipelines lead to inconvenient maintenance.
A microwave plasma chemical vapor deposition diamond growth equipment gas supply system is designed, including a gas source chamber, raw material gas cylinder, intake main pipe and intake control mechanism. The air intake main pipe is fixed through the gas pipe fixing mechanism, and the automatic switching of raw material gas cylinder is realized through the intake control mechanism.
It realizes the replacement of raw gas cylinders without shutting down, improves the growth efficiency and quality of diamonds, and avoids maintenance difficulties through fixed gas pipelines.
Smart Images

Figure CN222574780U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of diamond growth, in particular to a microwave plasma chemical vapor deposition diamond growth equipment gas supply system. Background Art
[0002] Microwave plasma chemical vapor deposition, abbreviated as MPCVD, is a process technology that uses a waveguide to pass microwaves generated by a microwave generator into a deposition chamber through an isolator, excites gas molecules in the deposition chamber to ionize and generate plasma, which reacts on the surface of the substrate in the deposition chamber to generate a solid material film, and then deposits solid materials.
[0003] Diamonds are produced by the microwave plasma chemical vapor deposition (MPCVD) method. During the production process, the diamond growth equipment needs to add reactive gases into the growth chamber to promote the growth of diamonds. There are many types of reactive gases, generally methane, hydrogen, oxygen and nitrogen. In the traditional diamond growth inlet and outlet gas system, when replacing the gas cylinder, the MPCVD equipment needs to be shut down before the gas cylinder can be replaced, which will interrupt the growth of diamonds and affect the growth efficiency and quality of diamonds. In addition, the gas pipelines in the traditional diamond growth inlet and outlet gas system are generally scattered in the gas source room, which makes it easy for people to get fat when entering and exiting the gas source room. At the same time, the scattered gas pipelines bring trouble to maintenance. Utility Model Content
[0004] The utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system to at least solve part of the above technical problems.
[0005] In order to achieve the above purpose, the technical solution adopted by the utility model is as follows:
[0006] A microwave plasma chemical vapor deposition diamond growth equipment gas supply system comprises a gas source chamber, at least two raw material gas cylinders arranged in the gas source chamber and storing the same raw material gas, a gas intake pipe, and a gas intake control mechanism connected between the raw material gas cylinders and the gas intake pipe; the gas intake pipe is connected to the MPCVD equipment for conveying the corresponding raw material gas thereto, a gas pipe fixing mechanism is arranged on the inner wall of the gas source chamber, and the gas intake pipe is fixed to the inner wall of the gas source chamber through the gas pipe fixing mechanism.
[0007] Furthermore, the air pipe fixing mechanism includes a rectangular fixing seat installed on the inner wall of the air source chamber, a limiting block arranged on the rectangular fixing seat, the limiting block is provided with an arc-shaped groove adapted to the air intake main pipe, the air intake main pipe is located in the arc-shaped groove and is fixed between the limiting block and the rectangular fixing seat.
[0008] Furthermore, a slot is provided on the rectangular fixing seat, a connecting block is slidably provided in the slot, a threaded hole C is provided on the connecting block, a threaded countersunk hole is provided on the limiting block, and a bolt A is connected to the threaded countersunk hole and the inner thread of the threaded hole C.
[0009] Furthermore, the air intake control mechanism includes an air intake branch pipe connected from the raw gas cylinder, and a regulating valve B arranged on the air intake branch pipe; the air intake main pipe is respectively connected to all the air intake branch pipes, and a regulating valve A is arranged on the air intake main pipe.
[0010] Furthermore, it also includes an emptying branch pipe connected from the raw gas cylinder, and an emptying main pipe connected to all the emptying branch pipes respectively; a regulating valve C is provided on the emptying branch pipe.
[0011] Furthermore, the exhaust main pipe is fixed to the inner wall of the air source chamber through the air pipe fixing mechanism.
[0012] Furthermore, it also includes a fixing mechanism, which includes a pair of mounting rods arranged on the inner wall of the air source chamber, a mounting plate installed between the two mounting rods, and a plurality of mounting seats arranged on the mounting plate for fixing the air intake control mechanism.
[0013] Furthermore, a mounting groove is provided on the mounting rod, a fixing block is movably provided in the mounting groove, a threaded hole A is provided on the fixing block, a threaded hole B matching the threaded hole A is provided on the mounting plate, and a bolt B is connected to the threaded hole A and the threaded hole B internally.
[0014] Furthermore, the mounting seat includes a base fixed to the mounting plate by screws, and a support seat fixed to the base by screws, and the air intake control mechanism is mounted on the support seat.
[0015] Compared with the prior art, the utility model has the following beneficial effects:
[0016] The utility model can switch between two raw material gas cylinders through an air intake control mechanism, thereby avoiding stopping for replacing raw material gas cylinders during the growth process of diamond, which affects the growth efficiency of diamond. The air intake main pipe is connected to the MPCVD equipment to transport the corresponding raw material gas thereto, and an air pipe fixing mechanism for fixing the air intake main pipe is provided on the inner wall of the air source chamber. The air pipe fixing mechanism fixes the air intake main pipe on the inner wall of the air source chamber, thereby avoiding the air intake main pipe being scattered in the air source chamber, which makes it inconvenient to perform subsequent maintenance on the air intake main pipe. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 It is a schematic diagram of the structure of the utility model.
[0018] Figure 2 It is a schematic diagram of the control mechanism of the utility model.
[0019] Figure 3It is a schematic diagram of the fixing mechanism of the utility model.
[0020] Figure 4 It is a schematic diagram of the installation rod of the utility model.
[0021] Figure 5 It is a schematic diagram of the mounting seat of the utility model.
[0022] Figure 6 It is a schematic diagram of the trachea fixing mechanism of the utility model.
[0023] Figure 7 It is a cross-sectional view of the fixing mechanism of the utility model.
[0024] Figure 8 It is a cross-sectional view of the trachea fixing mechanism of the utility model.
[0025] Fig. 9 It is a schematic diagram of a rectangular fixing seat of the utility model.
[0026] The names corresponding to the reference numerals are:
[0027] 1. Gas source chamber; 2. Fixing mechanism; 3. Raw gas cylinder; 4. Inlet main pipe; 5. Exhaust main pipe; 6. Inlet branch pipe; 8. Regulating valve B; 9. Regulating valve C; 10. Rectangular fixing seat; 11. Limiting block; 12. Arc slot; 13. Connecting block; 14. Threaded hole C; 15. Threaded countersunk hole; 16. Mounting rod; 17. Mounting plate; 18. Mounting seat; 19. Mounting slot; 20. Fixing block; 21. Threaded hole A; 22. Threaded hole B; 24. Base; 25. Support seat; 26. Gas pipe fixing mechanism; 27. Slot; 28. Bolt A; 29. Exhaust branch pipe; 30. Bolt B; 222. Regulating valve A. DETAILED DESCRIPTION
[0028] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.
[0029] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore they cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.
[0030] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; of course, it can also be a mechanical connection or an electrical connection; in addition, it can also be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0031] Example 1.
[0032] like Figure 1-9 As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0033] The utility model is provided with at least two raw material gas cylinders 3, and the utility model is preferably provided with two. The two raw material gas cylinders 3 can be switched for use through the air intake control mechanism, thereby avoiding stopping to replace the raw material gas cylinders 3 during the growth process of diamond, which affects the growth efficiency of diamond. The utility model is connected to the MPCVD equipment for conveying the corresponding raw material gas thereto, and an air pipe fixing mechanism 26 for fixing the air intake pipe 4 is provided on the inner wall of the gas source chamber 1. The air pipe fixing mechanism 26 fixes the air intake pipe 4 on the inner wall of the gas source chamber 1, thereby avoiding the air intake pipe 4 from being scattered in the gas source chamber 1, which is inconvenient for subsequent maintenance of the air intake pipe 4.
[0034] Example 2.
[0035] like Figure 1-9As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0036] The air pipe fixing mechanism 26 includes a rectangular fixing seat 10 installed on the inner wall of the air source chamber 1, a limiting block 11 arranged on the rectangular fixing seat 10, and an arc-shaped groove 12 adapted to the air intake main pipe 4 is provided on the limiting block 11. The air intake main pipe 4 is located in the arc-shaped groove 12 and is fixed between the limiting block 11 and the rectangular fixing seat 10.
[0037] Based on Example 1, this Example 2 provides a more preferred structure of the air pipe fixing mechanism 26, specifically: the air pipe fixing mechanism 26 includes a rectangular fixing seat 10 installed on the inner wall of the air source chamber 1, a limiting block 11 arranged on the rectangular fixing seat 10, and the limiting block 11 is provided with an arc-shaped groove 12 adapted to the air intake main pipe 4. The air intake main pipe 4 is located in the arc-shaped groove 12 and is fixed between the limiting block 11 and the rectangular fixing seat 10.
[0038] The rectangular fixing seat 10 of the utility model is fixed to the inner wall of the air source chamber 1 by screws, and two screw holes are provided on the rectangular fixing seat 10, and screw holes matching with the screw holes are opened on the inner wall of the air source chamber 1. The two screw holes on the rectangular fixing seat 10 correspond to the screw holes on the inner wall of the air source chamber 1 one by one, and the screws are threadedly connected to the screw holes on the rectangular fixing seat 10 and the screw holes on the inner wall of the air source chamber 1. The limiting card block 11 is fixed to the limiting card block 11 by screws. Specifically, the limiting card block 11 is provided with an arc-shaped card groove 12 matching with the air intake main pipe 4. When the limiting card block 11 and the rectangular fixing seat 10 are connected to the air intake main pipe 4, the air intake main pipe 4 is engaged with the arc-shaped card groove 12, so that the air intake main pipe 4 is fixed between the arc-shaped card groove 12 and the rectangular fixing seat 10.
[0039] Example 3.
[0040] like Figure 1-9As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0041] The air pipe fixing mechanism 26 includes a rectangular fixing seat 10 installed on the inner wall of the air source chamber 1, a limiting block 11 arranged on the rectangular fixing seat 10, and an arc-shaped groove 12 adapted to the air intake main pipe 4 is provided on the limiting block 11. The air intake main pipe 4 is located in the arc-shaped groove 12 and is fixed between the limiting block 11 and the rectangular fixing seat 10.
[0042] The rectangular fixing seat 10 is provided with a slot 27, in which a connecting block 13 is slidably provided. The connecting block 13 is provided with a threaded hole C14. The limiting block 11 is provided with a threaded countersunk hole 15. The threaded countersunk hole 15 and the threaded hole C14 are internally threadedly connected with a bolt A28.
[0043] Based on Example 2, this Example 3 provides a more preferred structure of the rectangular fixing seat 10, specifically: a slot 27 is provided on the rectangular fixing seat 10, a connecting block 13 is slidably provided in the slot 27, a threaded hole C14 is provided on the connecting block 13, a threaded countersunk hole 15 is provided on the limiting block 11, and a bolt A28 is threadedly connected to the threaded hole C14.
[0044] A slot 27 is provided on the rectangular fixing seat 10 of the utility model, and the slot 27 is in a convex shape. A connecting block 13 is slidably provided in the slot 27, and a threaded hole C14 is provided on the connecting block 13. A threaded countersunk hole 15 is provided on the limiting block 11. A bolt A28 is threadedly connected in the threaded countersunk hole 15 and the threaded hole C14, so that the limiting block 11 and the connecting block 13 are connected conveniently, thereby fixing the air intake main pipe 4, and the connecting block 13 is slidably provided in the slot 27, so that the positions of the connecting block 13 and the limiting block 11 in the slot 27 can be conveniently adjusted.
[0045] Example 4.
[0046] like Figure 1-9As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0047] The air intake control mechanism includes an air intake branch pipe 6 connected from the raw gas cylinder 3, and a regulating valve B8 arranged on the air intake branch pipe 6; the air intake main pipe 4 is respectively connected to all the air intake branch pipes 6, and the air intake main pipe 4 is provided with a regulating valve A222.
[0048] Based on Example 1, this Example 4 provides a more preferred structure of the air intake control mechanism, specifically: the air intake control mechanism includes an air intake branch pipe 6 connected from the raw gas cylinder 3, and a regulating valve B8 arranged on the air intake branch pipe 6; the air intake main pipe 4 is respectively connected to all the air intake branch pipes 6, and the air intake main pipe 4 is provided with a regulating valve A222.
[0049] In the utility model, the air inlet branch pipe 6 is connected to the raw gas cylinder 3, and the air inlet branch pipe 6 is provided with a regulating valve B8, the air inlet main pipe 4 is respectively connected to all the air inlet branch pipes 6, the regulating valve B8 can facilitate the control of the gas entering the air inlet branch pipe 6, and the air inlet main pipe 4 is provided with a regulating valve A222, the regulating valve A222 can control the gas flow entering the air inlet main pipe 4, so as to facilitate the adjustment of the gas flow entering the MPCVD equipment, and is opened and closed by the regulating valve B8. When the raw gas cylinder 3 needs to be replaced, one of the regulating valves B8 is closed and the other regulating valve B8 is opened at the same time, so that the unused raw gas cylinder 3 is connected to the air inlet main pipe 4 through the air inlet branch pipe 6, so that the unused raw gas cylinder 3 can supply gas to the MPCVD equipment, and then the used raw gas cylinder 3 is replaced, so as to avoid interrupting the growth of diamond when replacing the raw gas cylinder 3.
[0050] Example 5.
[0051] like Figure 1-9 As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0052] It also includes an emptying branch pipe 29 connected from the raw gas cylinder 3, and an emptying main pipe 5 connected to all the emptying branch pipes 29 respectively; a regulating valve C9 is provided on the emptying branch pipe 29.
[0053] This embodiment 5 provides a more preferred structure based on embodiment 1, specifically; it also includes an emptying branch pipe 29 connected from the raw gas cylinder 3, and an emptying main pipe 5 connected to all the emptying branch pipes 29 respectively; and a regulating valve C9 is provided on the emptying branch pipe 29.
[0054] The utility model drain branch pipe 29 is connected from the raw gas cylinder 3, and the drain main pipe 5 is respectively connected to all drain branch pipes 29. The drain main pipe 5 and the drain branch pipe 29 can conveniently discharge the gas remaining in the raw gas cylinder 3 after use. In addition, a regulating valve C9 is provided on the drain branch pipe 29. The regulating valve C9 can conveniently detect the gas pressure of the residual gas in the raw gas cylinder 3 after use, and discharge it into the raw gas cylinder 3 through the drain branch pipe 29 and the drain main pipe 5 in parallel, thereby avoiding residual gas in the raw gas cylinder 3 after use.
[0055] Example 6.
[0056] like Figure 1-9 As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0057] It also includes an emptying branch pipe 29 connected from the raw gas cylinder 3, and an emptying main pipe 5 connected to all the emptying branch pipes 29 respectively; a regulating valve C9 is provided on the emptying branch pipe 29.
[0058] The exhaust main pipe 5 is fixed to the inner wall of the gas source chamber 1 through the gas pipe fixing mechanism 26 .
[0059] Based on Example 5, Example 6 provides a more preferred structure of the exhaust main pipe 5 , specifically: the exhaust main pipe 5 is fixed to the inner wall of the gas source chamber 1 through the gas pipe fixing mechanism 26 .
[0060] The exhaust pipe 5 of the utility model is located in the arc-shaped slot 12 and is fixed between the limit block 11 and the rectangular fixing seat 10, so that the exhaust pipe 5 is easily fixed and the exhaust pipe 5 and the air intake pipe 4 are prevented from being placed together randomly.
[0061] Example 7.
[0062] like Figure 1-9 As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0063] It also includes a fixing mechanism 2, which includes a pair of mounting rods 16 arranged on the inner wall of the air source chamber 1, a mounting plate 17 installed between the two mounting rods 16, and a plurality of mounting seats 18 arranged on the mounting plate 17 for fixing the intake control mechanism.
[0064] This embodiment 7 provides a more preferred structure based on embodiment 1, specifically: it also includes a fixing mechanism 2, the fixing mechanism 2 includes a pair of mounting rods 16 arranged on the inner wall of the air source chamber 1, a mounting plate 17 installed between the two mounting rods 16, and a plurality of mounting seats 18 arranged on the mounting plate 17 for fixing the intake control mechanism.
[0065] The fixing mechanism 2 of the utility model can facilitate the installation of the air intake control mechanism on the inner wall of the air source chamber 1. Specifically, the fixing mechanism 2 includes a pair of mounting rods 16 arranged on the inner wall of the air source chamber 1, and a mounting plate 17 is installed between the two mounting rods 16. The mounting plate 17 is provided with a mounting seat 18 for fixing the air intake control mechanism, and the mounting seat 18 can facilitate the installation of the fixed air intake control mechanism.
[0066] Example 8.
[0067] like Figure 1-9 As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0068] It also includes a fixing mechanism 2, which includes a pair of mounting rods 16 arranged on the inner wall of the air source chamber 1, a mounting plate 17 installed between the two mounting rods 16, and a plurality of mounting seats 18 arranged on the mounting plate 17 for fixing the intake control mechanism.
[0069] The mounting rod 16 is provided with a mounting groove 19, in which a fixing block 20 is movably provided. The fixing block 20 is provided with a threaded hole A21, and the mounting plate 17 is provided with a threaded hole B22 matched with the threaded hole A21. The threaded holes A21 and B22 are internally threadedly connected with bolts B30.
[0070] Based on Example 7, this Example 8 provides a more preferred structure of the mounting rod 16, specifically: a mounting groove 19 is provided on the mounting rod 16, a fixing block 20 is movably provided in the mounting groove 19, a threaded hole A21 is provided on the fixing block 20, a threaded hole B22 matched with the threaded hole A21 is provided on the mounting plate 17, and a bolt B30 is connected to the threaded hole A21 and the threaded hole B22.
[0071] The fixing block 20 of the utility model is slidably arranged in the mounting groove 19, and the mounting groove 19 is provided with a threaded hole A21, and the mounting plate 17 is provided with a threaded hole B22 adapted to the threaded hole A21, and the bolt B30 is threadedly connected in the threaded hole A21 and the threaded hole B22, so as to facilitate fixing the mounting plate 17 on the mounting rod 16.
[0072] Example 9.
[0073] like Figure 1-9 As shown, the utility model provides a microwave plasma chemical vapor deposition diamond growth equipment gas supply system, including a gas source chamber 1, at least two raw gas cylinders 3 arranged in the gas source chamber 1 and storing the same raw gas, an air intake pipe 4, and an air intake control mechanism connected between the raw gas cylinders 3 and the air intake pipe 4; the air intake pipe 4 is connected to the MPCVD equipment for conveying the corresponding raw gas thereto, and an air pipe fixing mechanism 26 is provided on the inner wall of the gas source chamber 1, and the air intake pipe 4 is fixed to the inner wall of the gas source chamber 1 through the air pipe fixing mechanism 26.
[0074] It also includes a fixing mechanism 2, which includes a pair of mounting rods 16 arranged on the inner wall of the air source chamber 1, a mounting plate 17 installed between the two mounting rods 16, and a plurality of mounting seats 18 arranged on the mounting plate 17 for fixing the intake control mechanism.
[0075] The mounting seat 18 includes a base 24 fixed to the mounting plate 17 by screws, and a support seat 25 fixed to the base 24 by screws, and the air intake control mechanism is mounted on the support seat 25 .
[0076] Based on Example 7, this Example 9 provides a more preferred structure of the mounting seat 18, specifically: the mounting seat 18 includes a base 24 fixed to the mounting plate 17 by screws, and a support seat 25 fixed to the base 24 by screws, and the air intake control mechanism is installed on the support seat 25.
[0077] The base 24 of the utility model is fixed on the mounting plate 17 by screws, the support seat 25 is fixed on the base 24 by screws, the air intake control mechanism is installed on the support seat 25, and the regulating valve B8, regulating valve A222 and regulating valve C9 are respectively connected to the corresponding support seats 25 by screws. The regulating valve is provided with a threaded hole adapted to the screw, and the support seat 25 is provided with a threaded hole adapted to the screw. The threaded hole on the regulating valve is connected to the threaded hole on the support seat 25, and the screw is threadedly connected in the two threaded holes to fix the regulating valve and the corresponding support seat 25.
[0078] Finally, it should be noted that the above embodiments are only preferred embodiments of the present invention to illustrate the technical solution of the present invention, rather than limiting it, and certainly not limiting the patent scope of the present invention; although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention; that is to say, any changes or embellishments made to the main design concept and spirit of the present invention that have no substantive significance, and the technical problems they solve are still consistent with the present invention, should be included in the protection scope of the present invention; in addition, the direct or indirect application of the technical solution of the present invention in other related technical fields is also included in the patent protection scope of the present invention.
Claims
1. A microwave plasma chemical vapor deposition diamond growth equipment gas supply system, characterized in that: The invention comprises a gas source chamber (1), at least two raw material gas cylinders (3) arranged in the gas source chamber (1) and storing the same raw material gas, a gas intake pipe (4), and a gas intake control mechanism connected between the raw material gas cylinders (3) and the gas intake pipe (4); the gas intake pipe (4) is connected to the MPCVD equipment for conveying the corresponding raw material gas thereto, a gas pipe fixing mechanism (26) is arranged on the inner wall of the gas source chamber (1), and the gas intake pipe (4) is fixed to the inner wall of the gas source chamber (1) through the gas pipe fixing mechanism (26); The air pipe fixing mechanism (26) comprises a rectangular fixing seat (10) mounted on the inner wall of the air source chamber (1), a limiting block (11) arranged on the rectangular fixing seat (10), the limiting block (11) being provided with an arc-shaped groove (12) adapted to the air intake main pipe (4), the air intake main pipe (4) being located in the arc-shaped groove (12) and fixed between the limiting block (11) and the rectangular fixing seat (10).
2. The microwave plasma chemical vapor deposition diamond growth equipment gas supply system according to claim 1, characterized in that: A clamping groove (27) is provided on the rectangular fixing seat (10), a connecting block (13) is slidably provided in the clamping groove (27), a threaded hole C (14) is provided on the connecting block (13), a threaded countersunk hole (15) is provided on the limiting clamping block (11), and a bolt A (28) is threadedly connected between the threaded countersunk hole (15) and the threaded hole C (14).
3. The microwave plasma chemical vapor deposition diamond growth equipment gas supply system according to claim 1, characterized in that: The air intake control mechanism comprises an air intake branch pipe (6) connected from a raw gas cylinder (3) and a regulating valve B (8) arranged on the air intake branch pipe (6); an air intake main pipe (4) is respectively connected to all the air intake branch pipes (6), and a regulating valve A (222) is arranged on the air intake main pipe (4).
4. The microwave plasma chemical vapor deposition diamond growth equipment gas supply system according to claim 1, characterized in that: It also includes an emptying branch pipe (29) connected from the raw gas cylinder (3), and an emptying main pipe (5) connected to all the emptying branch pipes (29) respectively; a regulating valve C (9) is provided on the emptying branch pipe (29).
5. The microwave plasma chemical vapor deposition diamond growth equipment gas supply system according to claim 1, characterized in that: The exhaust main pipe (5) is fixed to the inner wall of the gas source chamber (1) via the gas pipe fixing mechanism (26).
6. The microwave plasma chemical vapor deposition diamond growth equipment gas supply system according to claim 1, characterized in that: The invention also comprises a fixing mechanism (2), the fixing mechanism (2) comprising a pair of mounting rods (16) arranged on the inner wall of the air source chamber (1), a mounting plate (17) installed between the two mounting rods (16), and a plurality of mounting seats (18) arranged on the mounting plate (17) for fixing the air intake control mechanism.
7. The microwave plasma chemical vapor deposition diamond growth equipment gas supply system according to claim 6, characterized in that: The mounting rod (16) is provided with a mounting groove (19), a fixing block (20) is movably provided in the mounting groove (19), a threaded hole A (21) is provided in the fixing block (20), a threaded hole B (22) matched with the threaded hole A (21) is provided on the mounting plate (17), and a bolt B (30) is internally threadedly connected between the threaded hole A (21) and the threaded hole B (22).
8. The microwave plasma chemical vapor deposition diamond growth equipment gas supply system according to claim 6, characterized in that: The mounting seat (18) comprises a base (24) fixed on the mounting plate (17) by screws, and a support seat (25) fixed on the base (24) by screws, and the air intake control mechanism is mounted on the support seat (25).