Light sensing chip, laser radar and electronic equipment

Abstract

The utility model relates to the technical field of semiconductor packaging, and provides a light sensing chip, a laser radar and electronic equipment, and the light sensing chip comprises a substrate, a first light transmitting body and a first intermediate layer. A light emitting part, a first light receiving part and a second light receiving part are arranged on the substrate; the first light receiving part is closer to the light emitting part than the second light receiving part; the first light-transmitting body is located on the side, away from the substrate, of the light emitting part, and the projection of the first light-transmitting body in the thickness direction covers the light emitting part and the first light receiving part; the first intermediate layer is light-transmitting; the first intermediate layer is filled in a gap between the first light-transmitting body and the substrate; a maximum thickness of the first intermediate layer is greater than a thickness of the light emitting portion. The light emitting part can be covered and surrounded by the first middle layer, and a part of space can be reserved between the light emitting part and the first light transmitting body through the first middle layer, so that normal routing operation between the light emitting part and the substrate is facilitated, the process difficulty in the packaging process is reduced, and the manufacturing efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of atomization technology, and in particular provides a light sensing chip, a laser radar and an electronic device. Background Art

[0002] The Time of Flight (TOF) device obtains the three-dimensional information of an object, such as the distance information or surface depth information of an object, by measuring the flight time of the light signal emitted by the light sensing chip in space. Due to its advantages such as long sensing distance and large measurement range, it is widely used in consumer electronics, autonomous driving, AR / VR and other fields.

[0003] The packaging structure of the photosensitive chip of the TOF device currently on the market is usually to package the light emitting chip and the light receiving chip on the substrate, and the packaging method is molding: the exposed chip is encapsulated and protected with epoxy resin molding compound through a mold under pressure and temperature. However, in the existing packaging structure, after the transparent glass is bonded to the chip, there is a narrow gap between the light emitting chip and the light receiving chip on the substrate, resulting in insufficient filling during the molding, affecting the reliability of the structure; and the bonding material used for bonding the transparent glass to the chip is very thin, and interference is easy to occur between the chip and the transparent glass, making it difficult to perform wire bonding operations on the chip, which increases the difficulty of the manufacturing process. Utility Model Content

[0004] The purpose of the embodiments of the present application is to provide a light sensing chip, a laser radar and an electronic device, aiming to solve the problems of insufficient plastic sealing filling and high difficulty in the manufacturing process during the packaging process of existing light sensing chips.

[0005] To achieve the above purpose, the technical solution adopted in this application is:

[0006] In the first aspect, an embodiment of the present application provides a light sensing chip, comprising a substrate, a first light-transmitting body and a first intermediate layer; a light emitting part, a first light receiving part and a second light receiving part are provided on the substrate; the first light receiving part is closer to the light emitting part than the second light receiving part; the first light-transmitting body is located on the side of the light emitting part away from the substrate, and the projection of the first light-transmitting body in the thickness direction covers the light emitting part and the first light receiving part; the first intermediate layer is light-transmitting; the first intermediate layer fills the gap between the first light-transmitting body and the substrate; the maximum thickness of the first intermediate layer is greater than the thickness of the light emitting part.

[0007] In some embodiments, the base includes a substrate and a photosensitive die disposed on the substrate; the first light receiving unit and the second light receiving unit are both disposed on the photosensitive die; the light emitting unit is disposed on the substrate, and the first intermediate layer is formed between the first light-transmitting body and the substrate and the photosensitive die; the first light-transmitting body is bonded to the substrate and the photosensitive die through the first intermediate layer.

[0008] By adopting the above technical solution, when the power of the light emitting part is relatively large, the light emitting part is arranged on the substrate, and the heat dissipation effect is good.

[0009] In some embodiments, the base includes a substrate and a photosensitive die disposed on the substrate; the first light receiving unit and the second light receiving unit are both disposed on the photosensitive die; the light emitting unit is disposed on the photosensitive die, the first intermediate layer is formed between the first light-transmitting body and the photosensitive die, and the first light-transmitting body is bonded to the photosensitive die through the first intermediate layer.

[0010] By adopting the above technical solution, the light emitting part is arranged on the photosensitive bare chip, so that the structure of the photosensitive chip body is compact.

[0011] In some embodiments, the light emitting portion is disposed on the substrate and is separated from the photosensitive die; the first intermediate layer includes a first base formed between the first light-transmitting body and the substrate and a second base formed between the first light-transmitting body and the photosensitive die; the first base fills the gap between the first light-transmitting body and the substrate, and the thickness of the first base is greater than the thickness of the light emitting portion; the second base fills the gap between the first light-transmitting body and the photosensitive die.

[0012] By adopting the above technical solution, the light emitting part is specifically arranged on the substrate, and the first intermediate layer adopts the die attach film (DAF film). The overflow part of the colloid during the bonding of the DAF film can be ignored, so that when the first intermediate layer is installed with the substrate and the photosensitive bare chip, the first intermediate layer can form a first base and a second base with a step structure; and the thickness of the first base and the second base can also be precisely controlled.

[0013] In some embodiments, the thickness of the first base portion is in the range of 140 um to 500 um; and / or the light transmittance of the first intermediate layer is configured to be greater than or equal to 95%.

[0014] By adopting the above technical solution, the thickness of the first base portion satisfies the superposition thickness of the thickness of the light emitting portion, the thickness of the conductive adhesive and the height of the gold wire above the light emitting portion. The first intermediate layer has a high light transmittance and can reduce light loss.

[0015] In some embodiments, the light sensing chip further includes a gold wire that forms an electrical connection between the light emitting portion and the substrate, and the gold wire is covered and surrounded by the first intermediate layer.

[0016] In some embodiments, the photosensor chip also includes a second light-transmitting body and a second light-transmitting intermediate layer; the second light-transmitting body is located on the side of the second light receiving part away from the photosensitive bare chip, and its projection in the thickness direction covers the second light receiving part; the second intermediate layer fills the gap between the second light-transmitting body and the photosensitive bare chip.

[0017] By adopting the above technical solution, the second light receiving unit can receive the optical signal returned from the outside through the second intermediate layer and the second light-transmitting body.

[0018] In some embodiments, a surface of the first light-transmitting body away from the photosensitive die is flush with a surface of the second light-transmitting body away from the photosensitive die.

[0019] By adopting the above technical solution, the final product structure is smooth and beautiful, and there is no height difference between the first light-transmitting body and the second light-transmitting body, which makes it more convenient to form the packaging body by injection molding in a mold.

[0020] In some embodiments, the photosensor chip also includes an opaque package; the package is at least partially surrounded by the first intermediate layer and the first light-transmitting body, and the package is at least partially surrounded by the second intermediate layer and the second light-transmitting body; and the package is configured to expose the first light-transmitting body away from the photosensitive die and the second light-transmitting body away from the photosensitive die to the outside.

[0021] By adopting the above technical solution, the packaging body fills the gaps between the components to achieve a good packaging effect, making the finished package flat and stable. The first light-transmitting body and the second light-transmitting body are exposed to the outside, so that the light beam only needs to pass through one layer of light-transmitting body, reducing light loss.

[0022] In some embodiments, the first intermediate layer and the second intermediate layer are both light-transmissive wafer adhesive films.

[0023] In some embodiments, the light emitting unit is configured to emit a sensing light signal to the outside through the first light-transmitting body; the first light receiving unit is configured to receive the sensing light signal as a part of the reference light signal transmitted through the first light-transmitting body; and the second light receiving unit is configured to receive a light signal returned from the outside through the second light-transmitting body.

[0024] In a second aspect, an embodiment of the present application provides a laser radar, including a processing circuit and the light sensing chip, wherein the processing circuit is electrically connected to the light sensing chip and is used to control the light sensing chip to perform three-dimensional information detection.

[0025] In a third aspect, an embodiment of the present application provides an electronic device, including the above-mentioned light sensing chip or the above-mentioned laser radar, and the electronic device is configured to implement corresponding functions based on the three-dimensional information of the surrounding environment obtained by the light sensing chip or the laser radar.

[0026] The beneficial effects of the light sensing chip provided in the embodiment of the present application are: by setting a first intermediate layer between the first light-transmitting body and the substrate, the first intermediate layer is light-transmitting and does not affect the light emitting part and the first light receiving part to emit and receive light beams; the maximum thickness of the first intermediate layer is configured to be greater than the thickness of the light-emitting part, so that the light-emitting part can be covered and surrounded by the first intermediate layer; the first intermediate layer can reserve some space between the light-emitting part and the first light-transmitting body, which is convenient for normal wire bonding operations between the light-emitting part and the substrate, and the gold wire can be covered and surrounded by the first intermediate layer; the light-emitting part will not interfere with the light-transmitting body; the process difficulty in the packaging process is reduced, and the production efficiency is improved.

[0027] In addition, the first intermediate layer can bond the first light-transmitting body to the substrate, and can form a good filling and packaging effect between the first light-transmitting body and the substrate, thereby eliminating the need for plastic sealing between the first light-transmitting body and the substrate, thereby simplifying the processing technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0029] Figure 1 A schematic diagram of the three-dimensional structure of a light sensing chip provided in one embodiment of the present application;

[0030] Figure 2 A cross-sectional view of a light sensing chip provided in one embodiment of the present application;

[0031] Figure 3 A schematic diagram of the three-dimensional structure of a light sensing chip provided in an embodiment of the present application with the packaging body removed;

[0032] Figure 4 A cross-sectional view of a light emitting portion of a light sensing chip provided in an embodiment of the present application with a package removed and the light emitting portion disposed on a substrate;

[0033] Figure 5 A schematic diagram of the three-dimensional structure of a substrate of a light sensing chip provided in one embodiment of the present application;

[0034] Figure 6 A cross-sectional view of a light emitting portion of a light sensing chip provided by an embodiment of the present application with a package removed and the light emitting portion disposed on a light sensing die;

[0035] Figure 7 This is a cross-sectional view of a light emitting portion of a light sensing chip provided in an embodiment of the present application, which is disposed on a photosensitive die.

[0036] Among them, the reference numerals in the figure are:

[0037] 1. base; 101. substrate; 1011. first surface; 1012. second surface;

[0038] 102. Photosensitive bare film;

[0039] 2. first light-transmitting body; 3. first intermediate layer; 301. first base; 302. second base;

[0040] 4. light emitting unit; 5. first light emitting unit; 6. second light emitting unit; 7. gold wire;

[0041] 8. A second light-transmitting body; 9. A second intermediate layer; 10. A packaging body. DETAILED DESCRIPTION

[0042] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0043] In the description of the present application, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0044] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0045] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0046] In the present application, the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0047] The existing time of flight (TOF) device obtains the three-dimensional information of the object by measuring the flight time of the light signal emitted by the light sensing chip in space. The three-dimensional information includes but is not limited to the distance information of the object, the depth information of the surface of the object, and the proximity information of the object. Due to its advantages such as long sensing distance and large measurement range, it is widely used in consumer electronics, autonomous driving, AR / VR and other fields. The packaging structure of the light sensing chip of the TOF device on the market is usually to package the light emitting chip and the light receiving chip on the substrate, and the packaging method is plastic packaging (Molding): the exposed chip is packaged and protected with epoxy resin plastic packaging material through a mold under the action of pressure and temperature. However, in the existing packaging structure, after the transparent glass is bonded to the chip, there is a narrow gap between the light emitting chip and the light receiving chip on the substrate, resulting in a poor filling effect during plastic packaging, which affects the structural reliability; and the bonding material used for bonding the transparent glass to the chip is very thin, and interference between the chip and the transparent glass is easy to occur, resulting in difficulty in performing wire bonding operations on the chip to achieve electrical connection with the substrate, making the manufacturing process very difficult.

[0048] Based on this, in order to solve the above problems, the present application provides a light sensing chip, which provides a first intermediate layer between the first light-transmitting body and the substrate. The first intermediate layer is light-transmitting and does not affect the light emitting part and the first light receiving part to emit and receive light beams; the maximum thickness of the first intermediate layer is configured to be greater than the thickness of the light-emitting part, so that the light-emitting part can be covered and surrounded by the first intermediate layer; the first intermediate layer can reserve some space between the light-emitting part and the first light-transmitting body, which is convenient for normal wire bonding operations between the light-emitting part and the substrate, and the gold wire can be covered and surrounded by the first intermediate layer; the light-emitting part will not interfere with the light-transmitting body; the process difficulty in the packaging process is reduced, and the production efficiency is improved.

[0049] Please refer to Figure 1 , Figure 2 , Figure 3 In a first aspect, an embodiment of the present application provides a light sensing chip, including a substrate 1, a first light transmissive body 2 and a first intermediate layer 3, wherein a light emitting part 4, a first light receiving part 5 and a second light receiving part 6 are provided on the substrate 1; the first light receiving part 5 is closer to the light emitting part 4 than the second light receiving part 6; the first light transmissive body 2 is located on the side of the light emitting part 4 away from the substrate 1, and the projection of the first light transmissive body 2 in the thickness direction covers the light emitting part 4 and the first light receiving part 5; the first intermediate layer 3 is light transmissive, and the first intermediate layer 3 fills the gap between the first light transmissive body 2 and the substrate 1; the maximum thickness of the first intermediate layer 3 is greater than the thickness of the light emitting part 4.

[0050] It can be understood that the light sensing chip of the present application is used to sense three-dimensional information of objects in space, such as: distance information of objects or depth information of object surfaces, etc.; wherein, the light emitting unit 4 is configured to emit a sensing light signal outward, wherein at least part of the sensing light signal can pass through the first intermediate layer 3 and the first light-transmitting body 2 and be projected into the space outside the light sensing chip, and a part of the sensing light signal projected into the external space will be reflected back by objects in the space, and this part of the sensing light signal reflected back by the object can be used to sense the three-dimensional information of the object, such as: distance information, etc.

[0051] The first light receiving part 5 is arranged at a position closer to the light emitting part 4 than the second light receiving part 6, and the projection of the first light transparent body 2 in the thickness direction covers the light emitting part 4 and the first light receiving part 5, so that a part of the sensing light signal is emitted from the light emitting part 4 and transmitted through the first light transparent body 2 inside the light sensing chip to the first light receiving part 5 as a reference light signal to be received. The first light receiving part 5 is configured to receive the reference light signal and output a corresponding reference signal. The reference signal can be used to determine the emission time of the sensing light signal and / or to correct deviations caused by changes in environmental conditions such as temperature.

[0052] The second light receiving unit 6 is configured to receive light signals returned from outside the light sensing chip and output corresponding light sensing signals; it is understandable that the light signals returned from outside the light sensing chip include sensing light signals reflected by objects and also include ambient light signals in the external space.

[0053] Optionally, the sensing light signal emitted by the light emitting unit 4 may be visible light, infrared light or near infrared light, with a wavelength range of, for example, 390-780 nm, 700-1400 nm, 800-1000 nm, etc. In some embodiments, the sensing light signal may be a periodic light pulse signal.

[0054] In some embodiments, the light emitting unit 4 may include a light emitting element for emitting a sensing light signal. The light emitting unit 4 may adopt, but is not limited to, a light source in the form of a vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, referred to as VCSEL, which can also be translated as a vertical resonant cavity surface emitting laser), an edge emitting laser (EEL), a light emitting diode (LED), a laser diode (LD), etc. Among them, the edge emitting laser may be a Fabry Perot (FP) laser, a distributed feedback (DFB) laser, an electro-absorption modulated laser (EML), etc. Optionally, the light emitting element may be single or plural. In the case where there are plural light emitting elements, the plural light emitting elements may be arranged regularly, for example, in an array, or the plural light emitting elements may be arranged irregularly and randomly. The light emitting elements may be of the same type or of different types.

[0055] Specifically, the first intermediate layer 3 is formed between the first light-transmitting body 2 and the substrate 1 and fills the gap between the first light-transmitting body 2 and the substrate 1. The first intermediate layer 3 can play a role in bonding the first light-transmitting body 2 to the substrate 1. The first intermediate layer 3 is light-transmitting and does not affect the light emitting part 4 and the first light receiving part 5 to emit and receive light beams. In addition, the maximum thickness of the first intermediate layer 3 is configured to be greater than the thickness of the light-emitting part 4, so that the light-emitting part 4 can be covered and surrounded by the first intermediate layer 3, and a better filling and packaging effect can be formed between the first light-transmitting body 2 and the substrate 1, so that there is no need to perform plastic sealing between the first light-transmitting body 2 and the substrate 1, simplifying the processing technology and improving the production efficiency.

[0056] In some embodiments, reference Figure 2, the light emitting part 4 is arranged on the substrate 1, and it is necessary to form an electrical connection between the light emitting part 4 and the substrate 1 by wire bonding on the side of the light emitting part 4 away from the substrate 1, that is, a gold wire 7 is formed between the light emitting part 4 and the substrate 1; it can be understood that wire bonding is also called Wire Bonding (pressure welding, also known as binding, bonding or wire bonding), which refers to the use of metal wires (gold wires, aluminum wires, etc.), using hot pressing or ultrasonic energy to complete the connection of the internal interconnection wiring of the solid-state circuit in the microelectronic device, that is, the connection between the chip and the circuit or lead frame. The gold wire 7 is a metal wire, and the gold wire 7 will be higher than the upper surface of the light emitting part 4; and the thickness of the first intermediate layer 3 is greater than the thickness of the light emitting part 4, which can reserve some space between the light emitting part 4 and the first light-transmitting body 2, and the gold wire 7 can be covered and surrounded by the first intermediate layer 3, and the gold wire 7 will not be damaged; the first intermediate layer 3 prevents the gold wire 7 from interfering with the light-transmitting body 2, so that the wire bonding operation can be carried out normally during the packaging process, reducing the process difficulty.

[0057] In some embodiments, the first intermediate layer 3 is a light-transmitting die attach film (DAF film). The DAF film is an adhesive used to connect semiconductor chips and packaging substrates, and chips and chips in the semiconductor packaging process. It is an indispensable material for making flash memory and the like in the semiconductor post-process. The DAF film has strong adhesion and can stably bond the first light-transmitting body 2 to the substrate 1; the DAF film also has excellent wire covering and surface filling capabilities. The DAF film is a relatively stable solid at room temperature, has a certain supporting effect, and is weak in shearing force. After the DAF film touches the light emitting part 4 and the gold wire 7, the light emitting part 4 and the gold wire 7 can enter the DAF film, but the DAF film can still maintain a supporting state, so that the light emitting part 4 and the gold wire 7 can be stably covered and surrounded by the DAF film, forming a better packaging structure.

[0058] It should be noted that, in the present application, the thickness of the DAF film of the first intermediate layer 3 is set to be greater than the thickness of the light emitting portion 4 , thereby ensuring that the first intermediate layer 3 can be fully filled between the first light-transmitting body 2 and the substrate 1 .

[0059] The light sensing chip of the present application is provided with a first intermediate layer 3 between the first light-transmitting body 2 and the substrate 1. The first intermediate layer 3 can play the role of bonding the first light-transmitting body 2 and the substrate 1; and the first intermediate layer 3 is light-transmitting, and does not affect the light emitting part 4 and the first light receiving part 5 to emit and receive light beams. The maximum thickness of the first intermediate layer 3 is configured to be greater than the thickness of the light-emitting part 4, so that the light-emitting part 4 can be covered and surrounded by the first intermediate layer 3, and a better filling and packaging effect can be formed between the first light-transmitting body 2 and the substrate 1, so that there is no need to perform plastic sealing between the first light-transmitting body 2 and the substrate 1, simplifying the processing technology and improving the production efficiency.

[0060] In addition, the thickness of the first intermediate layer 3 is greater than that of the light emitting part 4, and some space can be reserved between the light emitting part 4 and the first light-transmitting body, so as to facilitate the wire bonding operation between the light emitting part 4 and the substrate 1 to form the gold wire 7. The gold wire 7 can be covered and surrounded by the first intermediate layer 3 without being damaged; the gold wire 7 will not interfere with the light-transmitting body 2, so that the wire bonding operation can be carried out normally during the packaging process, reducing the difficulty of the process.

[0061] refer to Figure 3 , Figure 4 , Figure 5 In some embodiments, the base 1 includes a substrate 101 and a photosensitive die 102 disposed on the substrate 101; the first light receiving unit 5 and the second light receiving unit 6 are both disposed on the photosensitive die 102; the light emitting unit 4 is disposed on the substrate 101, and the first intermediate layer 3 is formed between the first light-transmitting body 2 and the substrate 101 and the photosensitive die 102; the first light-transmitting body 2 is bonded to the substrate 101 and the photosensitive die 102 through the first intermediate layer 3.

[0062] It can be understood that the first light receiving unit 5 and the second light receiving unit 6 respectively include photosensitive pixels (not shown) that can convert the received light signals into corresponding electrical signals. The photosensitive pixels are, for example, single photon avalanche diodes (SPAD), avalanche photodiodes (APD), silicon photomultipliers (SiPM) formed by multiple SPADs connected in parallel, and / or other suitable photoelectric conversion elements. Optionally, the photosensitive pixel can be single or multiple. In some embodiments, each photosensitive pixel can, for example, include a single SPAD and / or a combination of multiple SPADs.

[0063] refer to Figure 5 , the first light receiving unit 5 and the second light receiving unit 6 are both arranged on the same photosensitive die 102, and are respectively two photosensitive areas formed at different positions on the photosensitive die 102 and can be used to receive light signals and convert them into corresponding electrical signals. The photosensitive die 102 can be fixed on the substrate 101 by using a DAF film and electrically connected to the substrate 101 by bonding. Optionally, the DAF film here can be light-transmissive or light-impermeable, and this application does not make specific limitations on this.

[0064] Specifically, the substrate 101 is a printed circuit board (PCB), on which circuit traces necessary for realizing the electrical connection function are formed, and the substrate 101 can be a single-layer structure or a multi-layer structure. The substrate 101 can include a first surface 1011 and a second surface 1012 arranged opposite to each other along the thickness direction of the substrate 101, and the photosensitive die 102 is arranged on the first surface 1011 of the substrate 101.

[0065] refer to Figure 2-4 , a light source bonding area (not shown) is formed on the first surface 1011 of the substrate 101, the first light receiving unit 5 is closer to the light source bonding area than the second light receiving unit 6, and the light emitting unit 4 is arranged on the light source bonding area; then the first light-transmitting body 2 spans the substrate 101 and the photosensitive bare chip 102, the first intermediate layer 3 is partially formed between the first light-transmitting body 2 and the substrate 101, and the first intermediate layer 3 is partially formed between the first light-transmitting body 2 and the photosensitive bare chip 102. When the power of the light emitting unit 4 is relatively large, the light emitting unit 4 is arranged on the substrate 101, so that the device layout is more dispersed, and the heat dissipation effect of the light sensing chip is better.

[0066] In some embodiments, reference Figure 6 , Figure 7 The base 1 includes a substrate 101 and a photosensitive bare chip 102 arranged on the substrate 101; the light emitting part 4, the first light receiving part 5 and the second light receiving part 6 are all arranged on the photosensitive bare chip 102; the first intermediate layer 3 is formed between the first light transparent body 2 and the photosensitive bare chip 102, and the first light transparent body 2 is bonded to the photosensitive bare chip 102 through the first intermediate layer 3.

[0067] Specifically, a light source bonding area (not shown) is formed on the photosensitive die 102, the first light receiving part 5 is closer to the light source bonding area than the second light receiving part 6, and the light emitting part 4 is disposed on the light source bonding area; then the first intermediate layer 3 is formed between the first light-transmitting body 2 and the photosensitive die 102. When the power of the light emitting part 4 is relatively low, the light emitting part 4 is disposed on the photosensitive die 102 to make the structure of the light sensing chip more compact.

[0068] It should be noted that the light emitting unit 4 can be arranged on the first surface 1011 of the substrate 101 according to the power and heat dissipation requirements of the light emitting unit 4; the light emitting unit 4 can also be arranged on the end surface of the photosensitive die 102 away from the substrate 101, which is more flexible.

[0069] It can be understood that the first intermediate layer 3 uses DAF film, which is an adhesive used to connect semiconductor chips and packaging substrates, and chips and chips in the semiconductor packaging process. It has a good bonding effect. The DAF film has strong adhesion and can stably bond the first light-transmitting body 2 to the substrate 101, and the first light-transmitting body 2 to the photosensitive bare chip 102.

[0070] In some embodiments, reference Figure 2-Figure 5 , the light emitting part 4 is disposed on the substrate 101 and is spaced apart from the photosensitive die 102; the first intermediate layer 3 includes a first base 301 formed between the first light-transmitting body 2 and the substrate 101 and a second base 302 formed between the first light-transmitting body 2 and the photosensitive die 102. The first base 301 fills the gap between the first light-transmitting body 2 and the substrate 101, and the thickness of the first base 301 is greater than the thickness of the light emitting part 4; the second base 302 fills the gap between the first light-transmitting body 2 and the photosensitive die 102.

[0071] Specifically, the bottom surface of the light emitting part 4 is cured to the first surface 1011 of the substrate 101 through a conductive adhesive (not shown) and electrically connected. The conductive adhesive is, for example, conductive silver paste; the top surface of the light emitting part 4 serves as the light emitting surface. If the positive and negative electrodes of the light emitting part 4 are located on the bottom and top surfaces respectively, the electrodes of the light emitting part 4 on the top surface need to be electrically connected to the substrate 101 through wire bonding; if the positive and negative electrodes of the light emitting part 4 are both located on the bottom surface, no wire bonding operation is required; if the positive and negative electrodes of the light emitting part 4 are both located on the top surface, wire bonding is required for both electrodes of the light emitting part 4 on the top surface to be electrically connected to the substrate 101.

[0072] The light emitting part 4 is disposed on the substrate 101, and the first light-transmitting body 2 spans across the substrate 101 and the photosensitive bare chip 102, and then the first intermediate layer 3 will form a first base 301 and a second base 302 with a step structure. The thickness of the first base 301 is greater than the thickness of the second base 302, and the thickness of the first base 301 is greater than the thickness of the light emitting part 4, ensuring that the light emitting part 4 and the gold wire 7 formed on the light emitting part 4 can be covered and surrounded by the first base 301.

[0073] In some embodiments, the thickness of the first base 301 ranges from 140um to 500um, and specifically may be 150um, 200um, 250um, 300um, 350um, 400um, 450um, or 500um.

[0074] It can be understood that the thickness of the light emitting part 4 currently on the market ranges from 60um to 150um, and the thickness of the conductive glue used for bonding between the light emitting part 4 and the substrate 101 ranges from 10-25um; the height range of the gold wire 7 above the light emitting part 4 is usually controlled to be less than or equal to 70um, so that the wire bonding yield is high and it is conducive to mass production; then the thickness of the first base 301 needs to meet the superimposed thickness of the thickness of the light emitting part 4, the thickness of the conductive glue and the height of the gold wire 7 above the light emitting part 4.

[0075] Specifically, the first intermediate layer 3 adopts a DAF film, and the DAF film is pre-arranged on the first light-transmitting body 2, and then the first light-transmitting body 2 is bonded to the substrate 101 and the photosensitive bare chip 102; since the DAF film has excellent wire covering and surface filling capabilities, the DAF film is a relatively stable semi-solid adhesive film at room temperature, has a certain supporting effect, and is weak in shear force. After the DAF film touches the light emitting part 4 and the gold wire 7, the light emitting part 4 and the gold wire 7 can enter the DAF film, but the DAF film can still maintain a supporting state, so that the light emitting part 4 and the gold wire 7 can be stably covered and surrounded by the DAF film, forming a better packaging structure.

[0076] It can be understood that the DAF film is sticky but does not flow, so that when the first light-transmitting body 2 is bonded to the substrate 101 and the photosensitive die 102, the overflow of the colloid of the DAF film can be ignored; it can allow a height difference between the end face of the light-emitting part 4 away from the substrate 101 and the end face of the first light-receiving part 5 away from the substrate 101, thereby reducing the difficulty of the packaging process; when the first intermediate layer 3 is installed with the substrate 101 and the photosensitive die 102, the first intermediate layer 3 can form a first base 301 and a second base 302 with a stepped structure, and the thickness of the first base 301 and the second base 302 can also be precisely controlled.

[0077] In some embodiments, the light transmittance of the first intermediate layer 3 is configured to be greater than or equal to 95%, the first intermediate layer 3 has good light transmittance, and the light beam emitted by the light emitting part 4 can penetrate the first intermediate layer 3 well, reducing refraction or reflection loss.

[0078] In some embodiments, reference Figure 2-Figure 6 The light sensing chip also includes a second light-transmitting body 8 and a second light-transmitting intermediate layer 9; the second light-transmitting body 8 is located on the side of the second light receiving part 6 away from the photosensitive bare chip 102, and the projection of the second light-transmitting body 8 in the thickness direction covers the second light receiving part 6; the second intermediate layer 9 fills the gap between the second light-transmitting body 8 and the photosensitive bare chip 102.

[0079] It can be understood that the second light receiving part 6 is used to receive the sensing light signal from the outside of the light sensing chip. Therefore, by setting the second light transparent body 8 and the second intermediate layer 9; the second light transparent body 8 is bonded to the photosensitive bare chip 102 through the second intermediate layer 9, and the second intermediate layer 9 fills the gap between the second light transparent body 8 and the photosensitive bare chip 102, which can form a good filling and packaging effect between the second light transparent body 8 and the photosensitive bare chip 102.

[0080] In some embodiments, the second intermediate layer 9 is a light-transmitting die attach film (DAF film).

[0081] In some embodiments, the light transmittance of the second intermediate layer 9 is configured to be greater than or equal to 95%, and the second intermediate layer 9 has good light transmittance, and the light beam emitted by the light emitting unit 4 can penetrate the first intermediate layer 3 well, reducing the refraction loss. Then, the second light receiving unit 6 can receive the sensing light signal returned from the outside through the second intermediate layer 9 and the second light-transmitting body 8.

[0082] refer to Figure 1 , Figure 2 In some embodiments, a surface of the first light-transmitting body 2 away from the photosensitive die 102 is flush with a surface of the second light-transmitting body 8 away from the photosensitive die 102 .

[0083] It can be understood that the thickness of the second intermediate layer 9 is set to be equal to the thickness of the second base 302, so that there is no height difference between the first light-transmitting body 2 and the second light-transmitting body 8. Figure 1 The final packaged photosensitive chip product has a smooth and beautiful upper surface.

[0084] refer to Figure 1 , Figure 2 , Figure 3 , Figure 7 In some embodiments, the light sensing chip further includes a light-opaque package 10; the package 10 is at least partially surrounded by the first intermediate layer 3 and the first light-transmitting body 2, and the package 10 is at least partially surrounded by the second intermediate layer 9 and the second light-transmitting body 8; and the package 10 is configured so that a side of the first light-transmitting body 2 away from the photosensitive bare chip 102 and a side of the second light-transmitting body 8 away from the photosensitive bare chip 102 are exposed to the outside.

[0085] It can be understood that providing the packaging body 10 on the substrate 101 can protect and reinforce the structure and form a good packaging structure for the light sensing chip; the packaging body 10 is opaque, so that the light emitting part 4 and the first light receiving part 5 can only emit and receive light beams through the first light transparent body 2, and the second light receiving part 6 can only receive light beams through the second light transparent body 8; the packaging body 10 can shield the optical crosstalk between the light emitting part 4 and the second light receiving part 6, thereby improving the sensing accuracy and improving product reliability.

[0086] In some embodiments, a package 10 is formed on the substrate 101 to fill the gaps between different components. The end surface of the principle substrate 101 of the package 10 is flush with the end surfaces of the first light-transmitting body 2 and the second light-transmitting body 8 away from the substrate 101, so that the overall structure is flat and beautiful. The package 10 is formed by plastic packaging, for example: first, a mold cavity on the mold is used to form an injection molding space with a preset shape on the substrate 101, and then a packaging material is poured into the injection molding space to fill the gaps between different components provided on the substrate 101. After the packaging material is cured, the package 10 is formed. The material of the package 10 can be, but is not limited to, polyimide (PI), epoxy molding compound (EMC), silicone, etc.

[0087] Understandably, reference Figure 2 The first intermediate layer 3 fills the gap between the first light-transmitting body 2 and the substrate 101, that is, the first intermediate layer 3 can fully fill the gap between the light-emitting part 4 and the photosensitive bare chip 102; so that during plastic sealing, there is no need to plastic seal the first light-transmitting body 2 and the substrate 101, and only the first intermediate layer 3 and the part other than the second intermediate layer 9 need to be plastic sealed, which simplifies the processing technology and reduces the manufacturing difficulty.

[0088] In some embodiments, the light transmittance of the material of the package body 10 is less than or equal to 0.5%, so that the package body can effectively absorb or shield light.

[0089] In some embodiments, the first light-transmitting body 2 and the second light-transmitting body 8 are both made of light-transmitting materials with good light-transmitting properties, such as glass, acrylic plate, etc., preferably glass.

[0090] In some embodiments, the end surface of the first light-transmitting body 2 away from the substrate 101 and the end surface of the second light-transmitting body 8 away from the substrate 101 are respectively provided with optical film layers, such as filters, and the filters are configured to transmit light within a preset wavelength range and filter out light outside the preset wavelength range to reduce the impact of ambient light on sensing. For example, in some embodiments, the sensing signal may be near-infrared light, and the filter may be an infrared multilayer coating (IR Coating).

[0091] In other embodiments, the end face of the first light-transmitting body 2 close to the substrate 101 and the end face of the second light-transmitting body 8 close to the substrate 101 are respectively provided with an anti-reflection film (Anti-Refection, abbreviated as AR, also translated as anti-reflection film), for example: the AR film is configured to reduce the reflection of light within a preset wavelength range to increase its transmittance.

[0092] By adopting the above technical solution, when the light sensing chip is working, the light emitting part 4 emits the light beam to the outside through the first light transparent body 2, and the second light receiving part 6 receives the external light beam through the second light transparent body 8; so that the light beam is emitted from the inside of the light sensing chip to the outside or from the outside to the inside of the light sensing chip only needs to pass through one layer of light transparent body, which is beneficial to reduce light loss and improve product reliability.

[0093] The second aspect of the embodiments of the present application also provides a laser radar, including a processing circuit and the above-mentioned light sensing chip, wherein the processing circuit is electrically connected to the light sensing chip and is used to control the light sensing chip to perform three-dimensional information detection.

[0094] Specifically, the three-dimensional information includes but is not limited to distance information of an object, depth information of the surface of an object, proximity information of an object, and the like.

[0095] Optionally, in some embodiments, the laser radar may further include a scanning unit, which may be configured to adjust the sensing direction of the light sensing chip to expand the sensing range of the light sensing chip.

[0096] The third aspect of the embodiment of the present application also provides an electronic device, which includes the above-mentioned light sensing chip or laser radar. The laser radar is used to sense the three-dimensional information of objects in space, and the three-dimensional information includes but is not limited to the distance information of the object, the depth information of the surface of the object, and the proximity information of the object. The three-dimensional information is used, for example, in 3D modeling, face recognition, intelligent driving, machine vision, monitoring, drone control, augmented reality (AR) / virtual reality (VR), simultaneous localization and mapping (SLAM) and other fields, and this application does not limit this. The electronic device is configured to implement corresponding functions according to the three-dimensional information of the surrounding environment obtained by the light sensing chip or laser radar, for example: it can be determined whether an object appears within a preset range in front of the electronic device according to the proximity information of the object; or, the electronic device can be controlled to avoid obstacles according to the distance information of the object; or, 3D modeling, face recognition, machine vision, etc. can be implemented according to the depth information of the surface of the object. The electronic device can be a consumer electronic product, a home electronic product, a vehicle, a production device, etc. Among them, consumer electronic products include mobile phones, laptops, tablet computers, e-books, monitors, televisions, wearable devices, etc. Home electronic products include smart door locks, televisions, refrigerators, etc. Transportation tools include cars, motorcycles, electric skateboards, balance bikes, etc. Production equipment includes automatic CNC machine tools, robots, etc.

[0097] In the description of this specification, the description with reference to the terms "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0098] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A light sensing chip, characterized in that: include: A substrate, on which a light emitting part, a first light receiving part and a second light receiving part are provided; The first light receiving portion is closer to the light emitting portion than the second light receiving portion; A first light-transmitting body, the first light-transmitting body is located on a side of the light-emitting portion away from the substrate, and a projection of the first light-transmitting body in a thickness direction covers the light-emitting portion and the first light-receiving portion; A first intermediate layer having light transmittance; the first intermediate layer fills the gap between the first light-transmitting body and the substrate; and the maximum thickness of the first intermediate layer is greater than the thickness of the light-emitting portion.

2. The light sensing chip according to claim 1, characterized in that: The base includes a substrate and a photosensitive die arranged on the substrate; the first light receiving part and the second light receiving part are both arranged on the photosensitive die; the light emitting part is arranged on the substrate, and the first intermediate layer is formed between the first light-transmitting body and the substrate and the photosensitive die; the first light-transmitting body is bonded to the substrate and the photosensitive die through the first intermediate layer.

3. The light sensing chip according to claim 1, characterized in that: The base includes a substrate and a photosensitive die arranged on the substrate; the first light receiving part and the second light receiving part are both arranged on the photosensitive die; the light emitting part is arranged on the photosensitive die, the first intermediate layer is formed between the first light-transmitting body and the photosensitive die, and the first light-transmitting body is bonded to the photosensitive die through the first intermediate layer.

4. The light sensing chip according to claim 2, characterized in that: The light emitting portion is arranged on the substrate and is separated from the photosensitive die; the first intermediate layer includes a first base formed between the first light-transmitting body and the substrate and a second base formed between the first light-transmitting body and the photosensitive die; the first base fills the gap between the first light-transmitting body and the substrate, and the thickness of the first base is greater than the thickness of the light emitting portion; the second base fills the gap between the first light-transmitting body and the photosensitive die.

5. The light sensing chip according to claim 4, characterized in that: The thickness of the first base portion ranges from 140um to 500um; and / or the light transmittance of the first intermediate layer is configured to be greater than or equal to 95%.

6. The light sensing chip according to claim 1, characterized in that: The light sensing chip further includes a gold wire that forms an electrical connection between the light emitting portion and the substrate, and the gold wire is covered and surrounded by the first intermediate layer.

7. The light sensing chip according to any one of claims 2 to 5, characterized in that: The photosensor chip also includes a second light-transmitting body and a second light-transmitting intermediate layer; the second light-transmitting body is located on the side of the second light receiving part away from the photosensitive bare chip, and its projection in the thickness direction covers the second light receiving part; the second intermediate layer fills the gap between the second light-transmitting body and the photosensitive bare chip.

8. The light sensing chip according to claim 7, characterized in that: A surface of the first light-transmitting body away from the photosensitive die is flush with a surface of the second light-transmitting body away from the photosensitive die.

9. The light sensing chip according to claim 7, characterized in that: The photosensitive chip also includes an opaque package; the package is at least partially surrounded by the first intermediate layer and the first light-transmitting body, and the package is at least partially surrounded by the second intermediate layer and the second light-transmitting body; and the package is configured to expose the first light-transmitting body away from the photosensitive die and the second light-transmitting body away from the photosensitive die to the outside.

10. The light sensing chip according to claim 7, characterized in that: The first intermediate layer and the second intermediate layer are both light-transmissive wafer adhesive films.

11. The light sensing chip according to claim 7, characterized in that: The light emitting unit is configured to emit a sensing light signal to the outside through the first light-transmitting body; the first light receiving unit is configured to receive the sensing light signal as a part of the reference light signal transmitted through the first light-transmitting body; and the second light receiving unit is configured to receive a light signal returned from the outside through the second light-transmitting body.

12. A laser radar, characterized in that: It comprises a processing circuit and a light sensing chip as described in any one of claims 1 to 11, wherein the processing circuit is electrically connected to the light sensing chip and is used to control the light sensing chip to perform three-dimensional information detection.

13. An electronic device, characterized in that: The electronic device comprises a light sensing chip as described in any one of claims 1 to 11 or a laser radar as described in claim 12, and is configured to implement corresponding functions according to three-dimensional information of the surrounding environment obtained by the light sensing chip or the laser radar.

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