Radio frequency interconnection transmission structure based on SIP packaging

Abstract

The utility model discloses a radio frequency interconnection transmission structure based on SIP packaging. The radio frequency interconnection transmission structure comprises an HTCC substrate, a PCB substrate, a first vertical interconnection structure arranged in the HTCC substrate, and a second vertical interconnection structure arranged between the HTCC substrate and the PCB substrate. The HTCC substrate comprises a microstrip line and a first strip line, and a radio frequency signal is transmitted to the second vertical interconnection structure through the microstrip line, the first vertical interconnection structure and the first strip line in sequence and is transmitted to the PCB substrate through the second vertical interconnection structure; the HTCC substrate, the first vertical interconnection structure and the second vertical interconnection structure are packaged in a shell through an SIP packaging technology. The utility model has the advantages of simple packaging and small signal loss.

Description

Technical Field

[0001] The utility model relates to the technical field of radio frequency vertical interconnection, and in particular to a radio frequency interconnection transmission structure based on SIP packaging. Background Art

[0002] With the continuous development of radio frequency technology and the popularization of smart devices, most electronic products and components are moving towards miniaturization, so the demand for radio frequency vertical interconnection structures is increasing. However, traditional radio frequency interconnection transmission structures have problems such as complex packaging and high signal loss.

[0003] In view of this, this application is hereby filed. Utility Model Content

[0004] The technical problem to be solved by the utility model is that the traditional RF interconnection transmission structure has problems such as complex packaging and large signal loss. The purpose of the utility model is to provide a RF interconnection transmission structure based on SIP packaging. Based on the mainstream HTCC process level in the current SIP packaging, the HTCC substrate, the first vertical interconnection structure and the second vertical interconnection structure are packaged in a shell through the SIP packaging process, and the packaging is simple; and the first vertical interconnection structure arranged in the HTCC substrate and the second vertical interconnection structure arranged between the HTCC substrate and the PCB substrate are combined to realize the transmission of RF signals, and the signal loss is small. In this structure, the transmission path of the RF signal is to use a microstrip line to stripline method in the HTCC substrate (the microstrip line is connected to the first stripline through the first vertical interconnection structure), and then the RF signal is transmitted to the BGA solder ball by using the second vertical interconnection structure, and then the RF signal is output through the BGA solder ball to the second stripline in the PCB dielectric substrate.

[0005] The utility model is realized by the following technical solutions:

[0006] A radio frequency interconnection transmission structure based on SIP packaging, the radio frequency interconnection transmission structure comprising a HTCC substrate, a PCB substrate, a first vertical interconnection structure arranged in the HTCC substrate, and a second vertical interconnection structure arranged between the HTCC substrate and the PCB substrate;

[0007] The HTCC substrate includes a microstrip line and a first stripline, and the radio frequency signal is transmitted to the second vertical interconnection structure through the microstrip line, the first vertical interconnection structure, and the first stripline in sequence, and is transmitted to the PCB substrate through the second vertical interconnection structure;

[0008] The HTCC substrate, the first vertical interconnection structure and the second vertical interconnection structure are packaged in a housing through a SIP packaging process.

[0009] As a further preferred embodiment, the HTCC substrate comprises 10 layers of substrates, each layer of the substrates is stacked together, and each layer of the substrates is connected by a ground;

[0010] The microstrip line is arranged on the first substrate layer of the HTCC substrate, and the first strip line is arranged on the fifth substrate layer of the HTCC substrate.

[0011] As a further preference, the first vertical interconnection structure uses a first metal hole, which runs through the first substrate layer of the HTCC substrate to the fifth substrate layer, and is used to connect the microstrip line and the first strip line to transmit the radio frequency signal.

[0012] As a further preference, the second vertical interconnection structure comprises a second metal hole, and the second metal hole penetrates from the fifth layer substrate of the HTCC substrate to the PCB substrate.

[0013] As a further preference, the second vertical interconnection structure further comprises a BGA solder ball array, and the middle BGA solder ball of the BGA solder ball array is used to connect the first strip line of the HTCC substrate with the second strip line of the PCB substrate.

[0014] As a further preference, the radio frequency interconnection transmission structure also includes a plurality of metal shielding holes, which are evenly arranged around the microstrip line to bind the radio frequency signal and enhance the electromagnetic shielding effect.

[0015] As a further preference, the metal shielding hole only penetrates from the first substrate layer to the eighth substrate layer of the HTCC substrate.

[0016] As a further preference, the diameter of the metal shielding hole is 0.1 mm, and the distance between two adjacent metal shielding holes is 0.25 mm.

[0017] As a further preference, the plate material of the HTCC substrate is epoxy glass.

[0018] As a further preference, the board material of the PCB substrate is RT / duroid 6002.

[0019] As a further preference, the RF interconnection transmission structure is a broadband millimeter-wave RF vertical interconnection structure that can achieve an insertion loss of no more than 0.6dB and a return loss of less than -15.5dB in the entire frequency band of 2GHz to 29GHz.

[0020] Compared with the prior art, the utility model has the following advantages and beneficial effects:

[0021] 1. The utility model is a radio frequency interconnection transmission structure based on SIP packaging. Based on the mainstream HTCC process level in the current SIP packaging, the HTCC substrate, the first vertical interconnection structure and the second vertical interconnection structure are packaged in a housing through the SIP packaging process, and the packaging is simple; and the first vertical interconnection structure arranged in the HTCC substrate and the second vertical interconnection structure arranged between the HTCC substrate and the PCB substrate are combined to realize the transmission of radio frequency signals, and the signal loss is small;

[0022] 2. The utility model is a radio frequency interconnection transmission structure based on SIP packaging, with an operating frequency band of 2GHz to 29GHz, and the insertion loss of the whole frequency band is not more than 0.6dB, and the return loss is less than -15.5dB. It has excellent electrical characteristics such as high operating frequency, wide operating frequency band, and low insertion loss. It is suitable for millimeter wave SIP modules that require high operating frequency, wide operating bandwidth and low noise requirements;

[0023] 3. The utility model is a radio frequency interconnection transmission structure based on SIP packaging. The current mainstream HTCC process level is fully considered in the design layout. All size parameters in the structure are within the normal processing capacity range of the HTCC substrate and the PCB substrate. The processing is simple and the feasibility is strong. The transmission link of the structure is a microstrip line in the HTCC substrate to a stripline in the middle layer. Compared with the traditional vertical interconnection structure, the through hole is changed into a blind hole, which is equivalent to reducing the reactance value of the hole, making the structure easier to implement;

[0024] 4. The utility model provides a radio frequency interconnection transmission structure based on SIP packaging, which also includes a plurality of metal shielding holes, which are evenly arranged around the microstrip line to bind the radio frequency signal and enhance the electromagnetic shielding effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings described herein are used to provide a further understanding of the embodiments of the present utility model, constitute a part of this application, and do not constitute a limitation of the embodiments of the present utility model. In the drawings:

[0026] Figure 1 This is a schematic diagram of a radio frequency interconnection transmission structure based on SIP encapsulation in the utility model;

[0027] Figure 2 This is a schematic diagram of HFSS modeling of a radio frequency interconnection transmission structure based on SIP packaging in the utility model;

[0028] Figure 3 This is a graph of return loss and insertion loss vs. frequency of a radio frequency interconnection transmission structure based on SIP packaging in the utility model;

[0029] Figure 4This is a schematic diagram of a 10-layer circuit of a HTCC substrate in a SIP package of a radio frequency interconnection transmission structure based on a SIP package of the utility model;

[0030] Figure 5 This is a schematic diagram of a three-layer circuit of a PCB substrate outside a SIP package of a radio frequency interconnection transmission structure based on a SIP package of the utility model.

[0031] Reference numerals and corresponding component names:

[0032] 1-HTCC substrate, 2-PCB substrate, 3-first vertical interconnection structure, 4-microstrip line, 5-first strip line, 6-BGA solder ball array, 7-second vertical interconnection structure, 8-second strip line, 9-metal shielding hole. DETAILED DESCRIPTION

[0033] Hereinafter, the terms "include" or "may include" used in various embodiments of the present invention indicate the presence of the functions, operations or elements of the present invention, and do not limit the addition of one or more functions, operations or elements. In addition, as used in various embodiments of the present invention, the terms "include", "have" and their cognates are intended only to indicate specific features, numbers, steps, operations, elements, components or combinations of the foregoing items, and should not be understood as first excluding the presence of one or more other features, numbers, steps, operations, elements, components or combinations of the foregoing items or the possibility of adding one or more features, numbers, steps, operations, elements, components or combinations of the foregoing items.

[0034] In various embodiments of the present invention, the expression "or" or "at least one of A or / and B" includes any combination or all combinations of the words listed at the same time. For example, the expression "A or B" or "at least one of A or / and B" may include A, may include B, or may include both A and B.

[0035] The expressions (such as "first", "second", etc.) used in the various embodiments of the present invention may modify the various components in the various embodiments, but may not limit the corresponding components. For example, the above expressions do not limit the order and / or importance of the elements. The above expressions are only used for the purpose of distinguishing one element from other elements. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, without departing from the scope of the various embodiments of the present invention, the first element may be referred to as the second element, and similarly, the second element may also be referred to as the first element.

[0036] It should be noted that if it is described that one component element is “connected” to another component element, the first component element may be directly connected to the second component element, and a third component element may be “connected” between the first component element and the second component element. Conversely, when one component element is “directly connected” to another component element, it can be understood that there is no third component element between the first component element and the second component element.

[0037] The terms used in the various embodiments of the present invention are only used for the purpose of describing specific embodiments and are not intended to limit the various embodiments of the present invention. As used herein, the singular form is intended to also include the plural form, unless the context clearly indicates otherwise. Unless otherwise defined, all terms used herein (including technical terms and scientific terms) have the same meaning as the meanings commonly understood by ordinary technicians in the field of the various embodiments of the present invention. The terms (such as the terms defined in the dictionary used in general) will be interpreted as having the same meaning as the contextual meaning in the relevant technical field and will not be interpreted as having an idealized meaning or an overly formal meaning, unless clearly defined in the various embodiments of the present invention.

[0038] In order to make the purpose, technical solutions and advantages of the utility model more clearly understood, the utility model is further described in detail below in conjunction with embodiments and drawings. The schematic implementation manner of the utility model and its description are only used to explain the utility model and are not intended to limit the utility model.

[0039] The traditional RF interconnection transmission structure has problems such as complex packaging and large signal loss. Considering that the system-level package SIP (System In a Package) is an integrated packaging technology, multiple chips, devices or modules can be integrated in the same package, and the connection and communication between them can be achieved through internal interconnection. Compared with the traditional multi-chip package (MCP), SIP has a deeper integration at the packaging level and can integrate various functional units more compactly. The ball grid array packaging technology BGA (Ball Grid Array) is one of the most advanced packaging interconnection technologies in integrated packaging technology. Due to its advantages such as good interconnection consistency, it has been widely used in high-density packaging of digital or low-frequency circuits.

[0040] Therefore, the utility model designs a radio frequency interconnection transmission structure based on SIP packaging in the field of radio frequency and communication, and provides a broadband millimeter wave vertical interconnection structure of mature HTCC process technology for commonly used SIP packaging. The utility model is based on SIP packaging process technology, and realizes a broadband millimeter wave radio frequency vertical interconnection structure with an insertion loss of no more than 0.6dB and a return loss of less than -15.5dB in the full frequency band of 2GHz to 29GHz. The advantages of this structure are excellent electrical characteristics such as high operating frequency, wide operating frequency band, low insertion loss, and small return loss. At the same time, the interconnection structure is easy to process, has high reliability, good consistency, strong derivability, and is very suitable for mass production.

[0041] The utility model is based on the mainstream HTCC process level in the current SIP packaging, and uses the three-dimensional high-frequency simulation software HFSS to establish a model. The HTCC substrate, the first vertical interconnection structure and the second vertical interconnection structure are encapsulated in a shell through the SIP packaging process, and the packaging is simple; and the first vertical interconnection structure arranged in the HTCC substrate and the second vertical interconnection structure arranged between the HTCC substrate and the PCB substrate are combined to realize the transmission of the radio frequency signal, and the signal loss is small. In this structure, the transmission path of the radio frequency signal is to use a microstrip line to stripline method in the HTCC substrate (the microstrip line is connected to the first stripline through the first vertical interconnection structure), and then the second vertical interconnection structure is used to transmit the radio frequency signal to the BGA solder ball, and then the radio frequency signal is output through the BGA solder ball to the second stripline in the PCB dielectric substrate.

[0042] Example 1

[0043] like Figure 1 As shown, the utility model is a radio frequency interconnection transmission structure based on SIP packaging, the radio frequency interconnection transmission structure includes a HTCC substrate 1, a PCB substrate 2, a first vertical interconnection structure 3 arranged in the HTCC substrate, and a second vertical interconnection structure 7 arranged between the HTCC substrate and the PCB substrate;

[0044] The HTCC substrate includes a microstrip line 4 and a first stripline 5, and the radio frequency signal is transmitted to the second vertical interconnection structure 7 through the microstrip line 4, the first vertical interconnection structure 3, and the first stripline 5 in sequence, and is transmitted to the PCB substrate 2 through the second vertical interconnection structure 7;

[0045] The HTCC substrate 1 , the first vertical interconnection structure 3 and the second vertical interconnection structure 7 are packaged in a housing through a SIP packaging process.

[0046] In this embodiment, the HTCC substrate 1 includes 10 layers of substrates from top to bottom, each layer of substrates is stacked together, and each layer of substrates is connected through a ground;

[0047] The microstrip line 4 is disposed on the first substrate layer of the HTCC substrate 1 , and the first stripline 5 is disposed on the fifth substrate layer of the HTCC substrate 1 .

[0048] In this embodiment, the first vertical interconnection structure 3 uses a first metal hole, which is actually a blind hole. The first metal hole only penetrates from the first substrate layer to the fifth substrate layer of the HTCC substrate 1, and does not penetrate to the bottom tenth substrate layer; the first metal hole is used to connect the microstrip line 4 and the first strip line 5 to transmit the radio frequency signal.

[0049] In this embodiment, the second vertical interconnect structure 7 includes a second metal hole, and the second metal hole penetrates from the fifth layer substrate of the HTCC substrate 1 to the PCB substrate 2 and further connected to the second strip line 8 .

[0050] In the above technical solutions, the first vertical interconnection structure 3 and the second vertical interconnection structure both use metal holes as conductive channels. The main advantages of metal holes are low cost, simple production and good heat dissipation effect.

[0051] In this embodiment, the second vertical interconnection structure 7 further includes a BGA solder ball array 6 , and the middle BGA solder ball of the BGA solder ball array 6 is used to connect the first strip line 5 of the HTCC substrate and the second strip line 8 of the PCB substrate 2 .

[0052] In practical applications, the above technical solution requires the use of several solder balls to transmit radio frequency signals. In the structure of the utility model, a 5*5 BGA solder ball array is used to implement the transmission, and the middle solder ball is used as the radio frequency transmission structure.

[0053] In this embodiment, the radio frequency interconnection transmission structure further includes a plurality of metal shielding holes 9 , which are evenly arranged around the microstrip line 4 to bind the radio frequency signal and enhance the electromagnetic shielding effect.

[0054] Specifically, the metal shielding hole 9 only penetrates from the first substrate to the eighth substrate of the HTCC substrate 1. The diameter of the metal shielding hole 9 is 0.1 mm, and the distance between two adjacent metal shielding holes 9 is 0.25 mm. In the utility model, the distance between two adjacent metal shielding holes 9 is small, and the electromagnetic shielding effect is better.

[0055] In this embodiment, the plate material of the HTCC substrate is epoxy glass. In the utility model, the HTCC substrate is a substrate based on hot pressing molding technology, and its material is mainly epoxy glass. Compared with the traditional silicon substrate, it has better mechanical strength, better electrical performance and wider process compatibility, etc., and its application range is wider than that of silicon material. The main advantages of the HTCC substrate are: (a) Higher thermal conductivity: The thermal conductivity of the HTCC substrate is higher than that of the silicon material, which means that in a high temperature environment, the HTCC substrate can better dissipate heat and improve the performance and stability of electronic equipment. (b) Better dielectric properties: The dielectric properties of the HTCC substrate are better than those of the silicon material, and can provide higher operating frequencies and lower electromagnetic interference. (c) Lower cost: The production cost of the HTCC substrate is relatively low, which can reduce the manufacturing cost of electronic equipment. (d) Easy to process: The HTCC substrate can more easily realize complex shapes and structures, which can improve the integration and portability of electronic devices.

[0056] In this embodiment, the material of the PCB substrate is RT / duroid 6002.

[0057] In specific implementation, the RF vertical interconnection from the circuit surface transmission line (i.e., microstrip line) of the HTCC substrate inside the SIP package of the utility model to the transmission line of the PCB substrate outside the SIP package needs to pass through more than 8 layers of HTCC substrate. The simulation model established based on the current mainstream HTCC process level is as follows Figure 2 As shown in FIG. 1 , the model consists of a HTCC substrate and a PCB substrate, wherein the HTCC substrate is a 10-layer board, and the first stripline in the middle is located on the fifth layer; the signal transmission path is as follows Figure 4 and Figure 5 As shown, Figure 4 This is the schematic diagram of the 10-layer circuit of the HTCC substrate in the SIP package (from D1 to D10); Figure 5 This is a schematic diagram of the 3-layer circuit of the PCB substrate outside the SIP package (from D1 to D3 layers). Specifically, it can be decomposed into the transmission of the RF signal from the microstrip line of the HTCC substrate inside the SIP package, matching the first vertical interconnection structure of the first stripline of the fifth layer through the HTCC substrate, transmitting the signal to the first stripline of the fifth layer of the HTCC substrate, the first stripline of the fifth layer of the HTCC circuit is vertically interconnected with the second vertical interconnection structure (the second metal hole and the BGA solder ball of the bottom layer of the HTCC substrate outside the SIP package), the solder ball that transmits the signal in the solder ball array of the SIP package and the vertical interconnection structure of the solder ball outside the SIP package to the middle layer of the PCB substrate, and then outputs the RF signal through the second stripline of the middle layer of the PCB substrate.

[0058] like Figure 2 As shown, Figure 2 This is a schematic diagram of the HFSS modeling of the RF interconnection transmission structure of the utility model. The modeling simulation results are shown in Figure 3 , Figure 3 The horizontal axis is the frequency, and the vertical axis is the S parameter of the RF. According to the above simulation results, it can be seen that the vertical interconnection structure has a return loss of 2GHz to 29GHz in the full frequency band ( Figure 3 S11) is less than -15.5dB, and the insertion loss in the full frequency band of 2GHz to 29GHz ( Figure 3 S21) is not greater than 0.6dB.

[0059] Example 2

[0060] The difference between this embodiment and the first embodiment is that the HTCC substrate 1, the first vertical interconnection structure 3 and the second vertical interconnection structure 7 are packaged in a housing through the SIP packaging process; and there can be multiple such SIP packaging process housings, and multiple such HTCC substrates 1 are connected to the PCB substrate. Thus, the RF interconnection transmission structure packaging is simple and flexible, and the RF signal transmission loss is small.

[0061] The advantages of the utility model include:

[0062] (1) The utility model is a radio frequency interconnection transmission structure based on SIP packaging. The operating frequency band is 2GHz to 29GHz, and the insertion loss of the whole frequency band is not more than 0.6dB, and the return loss is less than -15.5dB. It has excellent electrical characteristics such as high operating frequency, wide operating frequency band, and low insertion loss. It is suitable for millimeter wave SIP modules that require high operating frequency, wide operating bandwidth and low noise requirements;

[0063] (2) A radio frequency interconnection transmission structure based on SIP packaging fully considers the current mainstream HTCC process level in the design layout. All dimensional parameters in the structure do not exceed the normal processing capacity of the HTCC substrate and the PCB substrate. The processing is simple and the feasibility is strong. In addition, the transmission link in this structure is a microstrip line in the HTCC substrate converted to a stripline in the middle layer. Compared with the traditional vertical interconnection structure, the through hole is changed into a blind hole, which is equivalent to reducing the reactance value of the hole, making the structure easier to implement.

[0064] (3) A signal path of a radio frequency interconnect transmission structure based on SIP packaging consists of a microstrip line, a stripline, a BGA solder ball array and a matching circuit between the structures. Many metal shielding holes are added on both sides of the radio frequency transmission line to restrain the electromagnetic signal, and the electromagnetic shielding effect is strong. By appropriately changing and optimizing the matching structure parameters, it can be applied to SIP packaging circuits with different parameters such as different thicknesses, different numbers of layers, and different dielectric constants, and has strong versatility.

[0065] The specific implementation methods described above further illustrate the purpose, technical solutions and beneficial effects of the utility model in detail. It should be understood that the above description is only the specific implementation method of the utility model and is not used to limit the protection scope of the utility model. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the utility model should be included in the protection scope of the utility model.

Claims

1. A radio frequency interconnection transmission structure based on SIP encapsulation, characterized in that: The radio frequency interconnection transmission structure comprises a HTCC substrate (1), a PCB substrate (2), a first vertical interconnection structure (3) arranged in the HTCC substrate, and a second vertical interconnection structure (7) arranged between the HTCC substrate and the PCB substrate; The HTCC substrate comprises a microstrip line (4) and a first strip line (5); a radio frequency signal is sequentially transmitted through the microstrip line (4), the first vertical interconnection structure (3), and the first strip line (5) to the second vertical interconnection structure (7), and then transmitted to the PCB substrate (2) through the second vertical interconnection structure (7); The HTCC substrate (1), the first vertical interconnection structure (3) and the second vertical interconnection structure (7) are packaged in a housing through a SIP packaging process.

2. The radio frequency interconnection transmission structure based on SIP encapsulation according to claim 1 is characterized in that: The HTCC substrate (1) comprises 10 layers of substrates, each layer of the substrates being connected via a ground connection; The microstrip line (4) is arranged on a first substrate layer of the HTCC substrate (1), and the first strip line (5) is arranged on a fifth substrate layer of the HTCC substrate (1).

3. The radio frequency interconnection transmission structure based on SIP encapsulation according to claim 2 is characterized in that: The first vertical interconnection structure (3) uses a first metal hole, which runs through the first layer substrate to the fifth layer substrate of the HTCC substrate (1) and is used to connect the microstrip line (4) and the first strip line (5) to transmit radio frequency signals.

4. The radio frequency interconnection transmission structure based on SIP encapsulation according to claim 2, characterized in that: The second vertical interconnection structure (7) comprises a second metal hole, and the second metal hole penetrates from the fifth layer substrate of the HTCC substrate (1) to the PCB substrate (2).

5. The radio frequency interconnection transmission structure based on SIP encapsulation according to claim 4 is characterized in that: The second vertical interconnection structure (7) further comprises a BGA solder ball array (6), wherein the middle BGA solder ball of the BGA solder ball array (6) is used to connect the first strip line (5) of the HTCC substrate and the second strip line (8) of the PCB substrate (2).

6. The radio frequency interconnection transmission structure based on SIP encapsulation according to claim 1, characterized in that: The radio frequency interconnection transmission structure also includes a plurality of metal shielding holes (9), which are evenly arranged around the microstrip line (4) and are used to bind radio frequency signals and enhance electromagnetic shielding effects.

7. The radio frequency interconnection transmission structure based on SIP encapsulation according to claim 6, characterized in that: The metal shielding hole (9) only penetrates from the first substrate layer to the eighth substrate layer of the HTCC substrate (1).

8. The radio frequency interconnection transmission structure based on SIP encapsulation according to claim 6, characterized in that: The diameter of the metal shielding hole (9) is 0.1 mm, and the distance between two adjacent metal shielding holes (9) is 0.25 mm.

9. A radio frequency interconnection transmission structure based on SIP packaging according to any one of claims 1 to 8, characterized in that: The plate material of the HTCC substrate is epoxy glass.

10. A radio frequency interconnection transmission structure based on SIP packaging according to any one of claims 1 to 8, characterized in that: The PCB substrate is made of RT / duroid 6002.

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